JP2001308005A - Substrate-processing method and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an applying/developing apparatus, capable of transferring a substrate from an exposure system to a heating section, and restraining a resolution reaction from proceeding in a resist so as to improve a developed line in uniformity of width. SOLUTION: The inside of an interface station S3 located between a processing station S2, at which a development process is carried out and an exposure system S4 is cooled down to a temperature of 10 to 15 deg.C at which a resolution reaction hardly proceeds, and a heating section 31 promoting a resolution reaction in resist is provided inside the interface station S3. By this setup, a wafer W subjected to an exposure processing can be transferred from the exposure system S4 to the heating section 31 in a state of restraining resolution reaction from proceeding in resist, so that resist can be kept almost at the same level of resolution reaction, and a developed line can be improved in uniformity of width, by preventing unevenness from occurring in its width.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing method and a substrate processing apparatus for performing, for example, a coating process or a developing process of a resist solution on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display.

[0002]

2. Description of the Related Art In a photolithography technique in a manufacturing process of a semiconductor device, a resist is applied to a surface of a semiconductor wafer (hereinafter, referred to as a wafer), and the applied resist is exposed to a predetermined pattern and further developed. A resist film having a predetermined pattern is formed. Such a series of processing is performed by a system in which an exposure apparatus is connected to a coating / developing apparatus.

FIG. 17 is a plan view showing a conventional example of such an apparatus. A cassette C containing 25 substrates, for example, 25 semiconductor wafers W, is carried into a cassette stage 1 of a cassette station A1. A processing station A2 is connected to the cassette station A1, and an exposure device (not shown) is connected to the processing station A2 via an interface station A3.

The wafer W in the cassette C on the cassette stage 1 is taken out by the transfer arm 11 and passed through the transfer section of the shelf unit 12 to the coating unit 13.
Where the resist is applied. Thereafter, the wafer W is transferred and exposed on the route of the wafer transfer means 14 → the transfer section of the shelf unit 15 → the interface station A3 → the exposure apparatus. The exposed wafer W is transported to the processing station A2 through the reverse path, and the coating unit 1
After being developed by a developing unit (not shown) provided at the lower stage of No. 3, the wafer is conveyed along the route of the wafer transfer means 14 → the transfer section of the shelf unit 12 → the cassette C.

The shelves of the shelf units 12 and 15 are configured as a heating section, a cooling section, a transfer section for the wafer W, a hydrophobizing section, and the like. In order to apply a resist at a predetermined temperature, a heating process and a cooling process are performed in the shelf units 12 and 15 in this order. Reference numeral 16 denotes a transfer arm for transferring the wafer W between the processing station A2 and the exposure apparatus.

The processing station A2 is divided into a processing area including a coating unit 13 and a developing unit, and a transfer area in which a wafer transfer means 14 is disposed. , Air adjusted to a predetermined temperature and humidity is delivered,
In other words, the atmosphere is a high-precision adjustment atmosphere.

[0007]

Incidentally, in a chemically amplified resist, an acid is generated by exposure to light, and this acid is diffused by a heat treatment to act as a catalyst, so that a base resin which is a main component of the resist material is used. Decomposes or changes the molecular structure to make it soluble in a developer. Therefore, when this type of resist is used, the exposed wafer W is heated to a predetermined temperature by, for example, the heating unit of the shelf unit 15,
Acid solubilization reaction in developer (resist resolution reaction)
The cooling unit of the same shelf unit 15 cools down to a predetermined temperature in order to suppress the occurrence of the problem, and then the developing unit applies a developing solution.

However, in the chemically amplified resist, since the resolution reaction of the resist proceeds at about room temperature, the wafer W is transported between the exposure apparatus and the heating unit.
A change in the temperature or the transfer time of the transfer area has a large effect on the development line width, and there is a problem that the change in the development line width is accompanied by these fluctuations, and is particularly remarkable in an acetal-based chemically amplified resist. It is.

For this reason, the transport time between the exposure apparatus and the heating unit is controlled, and the degree of progress of the resolution reaction of the resist during this transport is made uniform to ensure the uniformity of the development line width. Nevertheless, the development line width still varies.

The present invention has been made under such circumstances, and an object of the present invention is to transport a substrate after exposure to a heating unit in a state where the progress of a resist resolution reaction is suppressed, and then subject the substrate to heat treatment. Is to provide a substrate processing apparatus that improves the uniformity of the development line width within the substrate surface and between the substrates.

[0011]

Therefore, in the substrate processing method of the present invention, a resist is applied, and the exposed substrate is heated by a heating unit to cause a resolution reaction of the resist, and then the substrate is cooled. In the substrate processing method of suppressing the progress of the resist resolution reaction and then applying a developing solution to the substrate, the exposed substrate is transported to a heating unit while suppressing the resist resolution reaction. I do.

[0012] Such a method includes an exposing section for exposing the substrate on which the resist is applied, a heating section for heating the exposed substrate to progress a resolution reaction of the resist, and A cooling unit for cooling the substrate and suppressing the progress of the resolution reaction of the resist, and a development processing unit for performing a coating process of a developer on the cooled substrate,
The substrate processing apparatus is characterized in that the exposed substrate is transported to a heating unit by a substrate transport unit in a state where the resolution reaction of the resist is suppressed.

At this time, for example, the exposed substrate is conveyed to a heating unit while cooling the resist so as not to cause dew condensation, thereby suppressing the progress of the resist resolution reaction. In addition, the amount of water adhering to the substrate when transported to the heating unit is made smaller than the amount of water adhering to the substrate after exposure, so that the progress of the resolution reaction of the resist is suppressed while the substrate is heated. It may be carried, in this case,
The exposed substrate is transported to a heating unit while supplying a gas having a lower humidity than air.

More specifically, it includes a mounting portion for mounting a substrate cassette containing a plurality of substrates, and transfer means for transferring the substrates to and from the substrate cassette mounted on the mounting portion. A cassette station, a processing station connected to the cassette station and performing processing on the substrate conveyed by the transfer means, and a processing station provided on a side opposite to the cassette station of the processing station. Exposure apparatus and cassette station for processing station
An interface station connected to the opposite side of the station for transferring a substrate between a processing station and an exposure apparatus, wherein the interface station heats the exposed substrate. Including, a heating unit that advances the resolution reaction of the resist, the processing station cools the substrate heated by the heating unit,
A cooling unit that suppresses the progress of the resolution reaction of the resist, and a development processing unit that performs a coating process of the developing solution on the substrate, including the interface station, in order to suppress the progress of the resolution reaction of the resist, The substrate is cooled so that dew condensation does not occur on the substrate.

According to this invention, the progress of the resolution reaction of the resist while being conveyed from the exposure apparatus to the heating unit is suppressed, and the substrate in which the progress of the resolution reaction is uniformed in the heating unit. , The resolution reaction is accelerated under the same conditions. For this reason, when the developing process is performed, the degree of the progress of the resolution reaction is uniform over the entire substrate, so that the occurrence of variation in the developing line width is suppressed.

The resist is, for example, a chemically amplified resist in which an acid generated by exposure causes a resolution reaction of the resist to proceed. Here, the resolution reaction of the resist means that the acid generated by the exposure is a resist material. Is a reaction of decomposing a base resin, which is a main component of the above, or changing its molecular structure so as to be soluble in a developing solution.

Further, another substrate processing apparatus according to the present invention comprises:
A coating processing unit for forming a coating film on a substrate, a development processing unit for developing the substrate, a heating unit for heating the substrate, and a coating processing unit, a development processing unit and a heating unit The apparatus further includes a substrate transport unit for loading and unloading the substrate, and a gas supply unit for supplying an inert gas to the substrate transported by the substrate transport unit.

In the present invention, since the gas supply means for supplying an inert gas to the substrate conveyed by the substrate conveyance means is provided, for example, during the conveyance of the substrate after the application of the resist, the resist is removed by moisture in the atmosphere. It is possible to suppress the occurrence of hydrolysis and the effect of bonding with oxygen in the atmosphere to affect the pattern resolution.

Specifically, for example, the substrate transfer means has an arm for holding the substrate, and the gas supply section has an opening surface in which a gas supply hole for supplying an inert gas from above the arm is formed. . In this case, a plurality of gas supply holes may be provided corresponding to the shape of the arm, or a plurality of gas supply holes may be provided corresponding to the shape of the substrate. Also,
The gas supply unit may be configured to include a temperature adjustment unit that adjusts the temperature of the inert gas and a humidity adjustment unit that adjusts the humidity of the inert gas. It is effective that the gas supply unit supplies an inert gas when the substrate transfer unit transfers the substrate from the coating processing unit to the heating unit.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the present invention is applied to a substrate coating and developing apparatus will be described below. FIG. 1 is a schematic plan view of this embodiment, and FIG. 2 is a perspective view showing the inside of the embodiment in a see-through manner.
Reference numeral 2 denotes a processing station for performing resist coating processing, development processing, and the like on the wafer W, S3 denotes an interface station, and S4 denotes an exposure apparatus.

The cassette station S1 is a cassette serving as a mounting portion for mounting a wafer cassette (hereinafter, referred to as "cassette") 22 forming a plurality of substrates, for example, four substrate cassettes accommodating 25 wafers W. Stage 21
And a transfer arm 23 serving as a transfer means for transferring the wafer W between the cassette 22 on the cassette stage 21 and the processing station S2. The transfer arm 23 is configured to be movable up and down, movable in the X and Y directions, and rotatable about a vertical axis.

The processing station S2 includes, for example, a developing unit D (D1, D2) forming two developing processing units,
Coating unit C (C1, C2) forming two coating processing units
And, for example, three shelf units R (R1, R2, R3)
And, for example, one substrate transfer means MA,
A wafer W is transferred between the cassette station S1 and the interface station S3, and a resist solution is applied to the wafer W in the station S2, and a developing process of the wafer W is performed. Heating and cooling the wafer W to a predetermined temperature before and after these processes;
It is configured to perform.

An example of the layout of the processing station S2 will be described.
A processing unit U having a developing unit D, a coating unit C, and the like is provided in two stages, for example, on the right side when viewed from the cassette station S1, for example. That is, two developing units D1 and D2 are arranged side by side with the developing unit D1 at the front side in a direction substantially orthogonal to the arrangement direction of the cassettes on the cassette stage 21. , Two application units C1 and C2 are provided side by side with the application unit C1 on the near side. In the following description, the cassette station S1 will be referred to as the near side, and the exposure device S4 will be referred to as the far side.

On the left side of the processing unit U from the cassette station S1, for example, it is possible to move the wafer W between the coating unit C, the developing unit D, and the shelf unit R. The substrate transfer means MA is provided so as to be movable and rotatable about a vertical axis. When viewed from the cassette station S1 side of the substrate transport means MA, a shelf unit R1 is arranged on the near side, a shelf unit R2 is arranged on the back side, and a shelf unit R3 is arranged on the left side. However, in FIG. 2, the shelf unit R3 and the substrate transfer means MA are omitted for convenience. The shelf unit R (R1, R2, R3) includes a heating unit 31 for heating a wafer W and a cooling unit 31 for cooling the wafer W, as shown in a shelf unit R1 in FIG. 3 and a shelf unit R2 in FIG. The cooling unit 32, the hydrophobic unit 33 for hydrophobizing the wafer surface in the shelf units R1 and R3, and the transfer of the wafer W between the transfer arm 23 of the cassette station S1 and the substrate transfer means MA in the shelf unit R1. In the shelf unit R2 for performing the transfer, a transfer unit 34 including a transfer table for transferring the wafer W between the transfer arm A of the interface station S3 and the substrate transfer means MA, which will be described later, and the shelf unit R1.
Are aligned vertically with an alignment unit 35 for positioning the wafer W.

The heating unit 31 is configured so that the wafer W is heated to a predetermined temperature by mounting the wafer W on a surface of a heating plate having a built-in heater, for example. For example, the wafer W is cooled to a predetermined temperature by mounting the wafer W on the surface of a cooling plate having a built-in thermo module.

The developing unit D will be described with reference to, for example, FIG. 5. Reference numeral 41 denotes a cup, in which a rotatable spin chuck 42 having a vacuum suction function is provided. The spin chuck 42 is configured to be able to move up and down by a lifting mechanism 43.
1, the substrate transporting means M
A wafer W is transferred to and from an arm 51 described later in FIG.

Regarding the delivery of the wafer W,
The spin chuck 42 relatively receives and receives the wafer W on the memory 51 from above the cup 41 above the cup 41,
The spin chuck 42 transfers the arm 51 to the arm 51 by the reverse operation. Reference numeral 44 denotes a nozzle for discharging a processing liquid, for example, a developing liquid; 45, a processing liquid supply pipe; and 46, a support arm for horizontally moving the nozzle.

The discharge nozzle 44 has a plurality of supply holes arranged, for example, in the diameter direction of the wafer W, and discharges a developing solution from the discharge nozzle 44 to the surface of the wafer W on the spin chuck 42. By rotating the spin chuck 42 half a turn, the developer is loaded on the wafer W, and a liquid film of the developer is formed. The coating unit C has substantially the same configuration as the developing unit D. However, the coating unit C is configured such that the discharge nozzle 44 supplies a processing liquid, for example, a resist liquid to substantially the center of the wafer W, for example. The resist liquid is dropped from the discharge nozzle 44 onto the surface of the wafer W, and the resist liquid is spread and applied on the wafer W by rotating the spin chuck 42.

Further, the space of these processing units U is closed. That is, as shown in FIG. 5, for example, the developing unit D and the like are separated from other space by the wall portion 47, and between the respective portions such as between the developing unit D1 and the coating unit C1 are formed by the partition wall 48. It is divided,
A transfer port 40 is provided at a position corresponding to the arm 51 of the substrate transfer means MA of each part of the wall 47 such as the developing unit D1.
Are formed.

The air is adjusted to a predetermined temperature, for example, 23 ° C., which is the application temperature of the developer, and to a predetermined humidity. As a result, these areas have a so-called high-precision adjusted atmosphere.

That is, for example, in the partitioned processing unit U, for example, as shown in FIG. 5, a filter unit F1 is provided so as to cover the upper side, and the atmosphere collected from the lower side of the processing unit U is exhausted from the factory. While being exhausted to the system, a part is introduced into the filter device 49, and the air purified by the filter device 49 is blown out as a down flow into each part through the filter unit F1. ing.

The filter unit F1 is, for example, a filter for cleaning air, and when a chemically amplified resist is used, an acid component is added to remove alkali components such as ammonia components and amines in the air. Equipped with a chemical filter, a suction fan and the like. Further, the filter device 49 includes an impurity removing unit for removing impurities, a heating mechanism and a humidifying mechanism, and a sending unit for sending air.

For example, when a chemically amplified resist is used as the resist solution, when a slight amount of ammonia contained in the air or an amine component such as an amine generated from a wall paint comes into contact with an acid on the resist surface. Since the catalytic reaction by the acid described later is suppressed and the shape of the pattern deteriorates, it is necessary to remove the alkali component. For this reason, it is necessary to prevent the alkali component from entering the development processing atmosphere. Therefore, the processing unit is made a closed space, and the intrusion of the alkali component from the outside is prevented by using a chemical filter.

The substrate transfer means MA includes, for example, three arms 51 for holding a wafer W, as shown in FIG.
A base 52 for supporting the arm 51 so that it can move forward and backward;
A pair of guide rails 5 for supporting the base 52 so as to be able to move up and down.
3, 54, and these guide rails 53, 5 are provided.
By rotating the rotation drive unit 4 by the rotation drive unit 55, it is configured to be able to move forward and backward, move up and down, and rotate around a vertical axis.

An interface station S3 is connected next to the processing station S2, and a wafer W on which a resist film is formed is exposed on the back side of the interface station S3. An exposure device S4 as an exposure unit for performing the exposure is connected. Interface stay
An option S3 is a CHP device (Chilling Hot Plate Process Station) for heating the wafer W and then cooling it.
6 provided in multiple stages, and the shelf unit R
4, a shelf unit R2 of the processing station S2,
A transfer arm A for transferring the wafer W to and from the exposure apparatus S4.
The wafer W is transferred between the exposure apparatus S4 and the exposure apparatus S4.
The resist is conveyed to the CHP device 6 in a state where the progress of the resolution reaction is suppressed, where a heating process for accelerating the resolution of the resist and a cooling process for stopping the resolution reaction of the resist are performed. It is configured as follows.

An example of the layout of the interface station S3 will be described. For example, a shelf unit R4 is provided on the left side when viewed from the cassette station side S1, for example. Is provided with a transfer arm A which is configured to be movable and rotatable about a vertical axis.

As shown in FIG. 7, for example, as shown in FIG. 7, the CHP device 6 has a heating plate serving as a heating unit for heating the wafer W in a processing chamber in which a loading / unloading port 60 for the wafer W is formed.
7 and a cooling plate 62 serving as a cooling unit for cooling the wafer W. First, the wafer W is placed on the heating plate 61 and heated to a predetermined temperature (FIG. 7).
(a)) The wafer W is lifted from the heating plate 61 by using, for example, projecting pins 63, and the cooling plate 62 is moved to a position below the wafer W by the transfer means 64 to cool the wafer W. 62 (FIG. 7 (b),
(c)) Then, the cooling plate 6 with the wafer W mounted thereon is placed.
2 is moved to a position beside the heating plate 61 to cool the wafer W to a predetermined temperature (FIG. 7).
(d)) In this apparatus, since the heating time is controlled by the transfer of the wafer W between the heating plate 61 and the cooling plate 62, overbake is prevented.

The transfer arm A has a single arm 56 for holding the wafer W, and the arm 56 is configured to be movable in the cassette arrangement direction (Y direction) of the cassette station S1. It has the same configuration as the substrate transfer means MA. For example, the transport arm A can move along a guide rail 57 provided by the rotation drive unit 55 in the Y direction.
It is configured to be movable in X and Y directions, to be able to move up and down, and to be rotatable around a vertical axis.

Further, the space of the interface station S3 is closed. That is, for example, as shown in FIGS. 8 and 9, the wall 71 is partitioned from another space, and a transfer port 72 is formed at a position of the wall 71 corresponding to the arm 56 of the transfer arm A. .

Then, the interface station S3
In the case of using a chemically amplified resist, for example, a filter for cleaning air, a chemical filter to which an acid component is added to remove an alkali component such as an ammonia component or an amine in the air, a suction fan Is provided so as to cover the upper side. As in the case of the processing unit U, the atmosphere collected from the lower side of the interface station S3 is exhausted to the factory exhaust system, while part of the atmosphere is exhausted to the factory exhaust system. The air introduced into the filter device 73 and purified by the filter device 73 is blown out as a down flow into each part via the filter unit F2.

The filter device 73 includes an impurity removing section for removing impurities, a heating mechanism and a humidifying mechanism, a sending section for sending air, and the like. Thus, impurities are removed in the interface station S3. Air adjusted to a predetermined temperature, for example, 10 to 15 ° C., which is a temperature at which the resolution reaction of the resist is suppressed and dew condensation does not occur, and a predetermined humidity, is sent out.

In the interface station S3, a partition 74 separates the area where the shelf unit R4 is provided from the area where the transfer arm A is provided. A transfer port 75 for the wafer W is formed in the partition wall 74 at a position corresponding to the transfer port 60 for each wafer W of the CHP device 6. In this example, the transfer port 60 and the transfer port 75 are Shutter 65,
76, the shutters 65,
The opening and closing timing of the opening 76 is controlled by the control unit 77.

Next, the operation of the above embodiment will be described. First, a cassette 22 containing, for example, 25 wafers W is loaded into a cassette stage 21 by an automatic transfer robot (or an operator), and the transfer arm 23 takes out the wafer W from the cassette 22 and processes the cassette. It is placed in the transfer section 34 of the shelf unit R1 of the application S2.

The wafer W is transferred along the route of the substrate transfer means MA → hydrophobic portion 33 of shelf unit R → substrate transfer means MA → cooling section 32 of shelf unit R → substrate transfer means MA → coating unit C, and the wafer surface Is hydrophobized, then cooled to a predetermined temperature to adjust the temperature, and the coating unit C applies a resist solution at a predetermined temperature, for example, 23 ° C. The wafer W coated with the resist liquid in this manner is transferred to the substrate transporting unit MA → the heating unit 31 of the shelf unit R → the substrate transporting unit MA.
→ The temperature is adjusted by being transported along the route of the cooling unit 32 of the shelf unit R, and subsequently, the substrate transport means MA → the shelf unit R2
Transfer section 34 → interface station S3
Is carried along the path from the transfer arm A to the exposure device S4, and exposure is performed.

The exposed wafer W is transported along the route of the exposure apparatus S4 → the transport arm A of the interface station S3 → the CHP device 6 of the shelf unit R4, and is first heated to a predetermined temperature by the heating plate 61 of the CHP device 6. After that, the temperature is cooled to a predetermined temperature by the cooling plate 62 to adjust the temperature.

At this time, since the transfer arm A and the CHP device 6 are partitioned by the partition wall 74, first, the shutter 65 of the CHP device 6 to transfer the wafer W and the transfer port 75 corresponding thereto are provided. The shutter 76 is opened to transfer the wafer W to the heating plate 61 of the CHP device 6, and then the shutters 65 and 76 are closed. Thereafter, the heating plate 61 and the cooling plate 62 perform predetermined processing. After the shutter 65 of the CHP device 6 and the shutter 76 of the partition wall 74 are opened again to transfer the wafer W to the transfer arm A, the shutters 65 and 76 are closed.

Here, in the present invention, the transfer area of the wafer W from the exposure device S4 to the heating section (heating plate 61) for performing the processing for accelerating the resolution reaction of the resist is suppressed by suppressing the progress of the resolution reaction of the resist. It is characterized in that the temperature is adjusted to such a degree that dew condensation does not occur, for example, 10 to 15 ° C. Therefore, in this example, the inside of the interface station S3 is adjusted to 10 to 15 ° C. ing.

Now, the chemically amplified resist will be described. As shown in FIG. 11, the resist comprises a base resin 81 as a main component, a protecting group 82 for suppressing dissolution of the base resin 81 in a developing solution, and The photo-acid generator 83 has a property that the entire exposed area is exposed with a small exposure energy.

In this type of resist, for example, FIG.
As shown in FIG. 11, an acid 84 is generated from the photo-acid generator 83 by exposure, and then, as shown in FIG. The protecting group 82 is cleaved from the resin 81 to make it soluble in an alkaline solution. The acid 84 is then replaced with another protecting group 8
In order to cleave 2, this reaction occurs in a chain reaction. Subsequently, the chain reaction is stopped by performing a cooling process, and thereafter, as shown in FIG. 11 (c), a region which has become soluble in the alkali solution by the chain reaction in the developing process is removed by a predetermined amount. Is formed. Here, FIG.
Reference numeral 85 denotes a substrate, 86 denotes a resist, and 87 denotes a mask on which a predetermined pattern is formed.

In such a resist, since the acid 84 generated by the exposure acts as a catalyst, the resolution reaction of the resist (reaction for cutting the protecting group 82 from the base resin 81) proceeds immediately after the exposure even if the progress is slow. . However, the rate of progress of the resolution reaction depends on the temperature, is lower than room temperature, and is a temperature at which dew condensation does not occur, for example, 10 to 10.
At a temperature of about 15 ° C., the traveling speed becomes considerably slow, and the progress of the resolution reaction is suppressed.

Accordingly, the wafer W after the exposure is
As described above, by transporting through the transport area adjusted to, for example, 10 to 15 ° C. as described above, the progress of the resolution reaction of the resist during the transport is suppressed. The reason why the cooling temperature of the wafer W is not dew-condensed in the transfer region is that when dew water adheres to the surface of the wafer W, the acid 84 at the resist interface (acid near the surface) is absorbed into the resist solution, and the unevenness occurs. This is for causing a high resolution progress and a development line width.

In this example, a heating treatment is performed on the heating plate 61 of the CHP device 6 in which the protecting group 82 is cut from the resin 81 with the acid 84 to make it soluble in an alkaline solution. At 62, a cooling process of stopping the chain reaction is performed.

The wafer W subjected to the predetermined processing in the CHP device 6 is transferred to the interface station S3.
Transfer arm A → shelf unit R of processing station S2
The wafer W is transported along the path of the second transfer unit 34 → substrate transport means MA → development unit D, and the wafer W is subjected to development processing at the development unit D at a predetermined temperature, for example, 23 ° C. which is the application temperature of the developer.

Thereafter, the wafer W is transferred to the substrate transfer means MA → the heating section 31 of the shelf unit R → the substrate transfer means MA → the cooling section 32 of the shelf unit R → the substrate transfer means MA → the transfer section 34 of the shelf unit R1 → the transfer arm. The wafer W transported by the route 23 and once heated to the predetermined temperature and then cooled to the predetermined temperature is returned to, for example, the original cassette 22 via the transfer unit 34.

Here, in the processing station S2, the wafers W are sequentially sent to the transfer section 34 of the shelf unit R1, and subsequently the vacant hydrophobizing section 33 → the shelf units R1, R2,
The vacant cooling unit 32 of R3 → the vacant coating unit C → the vacant heating unit 3 of the shelf units R1, R2, R3
1 → Cooling unit 3 with open shelf units R1, R2, R3
2 → The wafer W is transferred along the path of the interface station S3, and the exposed wafer W is the CHP device 6 in which the shelf unit R4 of the interface station S3 is open →
Open developing unit D of the processing station S2 → open heating unit 31 of the shelf units R1, R2, R3 → open cooling unit 32 of the shelf units R1, R2, R3 → transfer unit 34 of the shelf unit R1. It should just be conveyed.

In the above-described embodiment, since the exposed wafer W is transferred to the heating section through the transfer area cooled to a temperature that does not cause dew condensation, the uniformity of the development line width can be improved. . That is, the wafer W exposed by the exposure device S4 is transported to the heating section through a predetermined transport area, but the transport time from the exposure apparatus S4 to the heating section is constant. The degree of progress of the resolution reaction is almost the same.

At this time, the temperature of the transfer area is adjusted to a temperature at which no dew condensation occurs on the wafer W. At such a temperature, the progress of the resist resolution reaction is suppressed. It can be said that the progress of the resolution reaction is substantially suppressed. Therefore, in this state, if the exposed wafer W is transferred to the next step, the CHP device 6, the degree of progress of the resolution reaction of the wafer W when transferred to the CHP device 6 becomes substantially the same. Become. For this reason, in the apparatus 6, since the heating process is always performed on the wafer W in the same state, the degree of progress of the resolution reaction is also uniformed in the heating process, and thus the variation of the development line width is generated. Is suppressed, and the uniformity of the development line width is improved.

In this example, since the CHP device 6 is provided in the interface station S3, the inside of the interface station S3 is a transfer area from the exposure device S4 to the heating unit. Here, the volume of the interface station S3 is considerably smaller than that of the processing station S2, so that the transfer area from the exposure device S4 to the heating unit is narrowed. This is cost effective.

Further, the interface station S3
Inside, the CHP device 6 and the transfer arm A are separated by a partition wall 74.
Are separated from each other, the influence of the temperature from the heating plate 61 of the CHP device 6 on the area where the transfer arm A is provided is suppressed, and the temperature and humidity adjustment in the interface station S3 becomes easy.

As described above, according to the present invention, a shelf unit R4 provided with multiple CHP devices 6 is provided as shown in FIG.
It may be provided in the processing station S2. In this example, the shelf unit R4 is provided on the right side on the back side of the substrate transfer means MA when viewed from the cassette station S1, and the shelf unit R2 is provided on the left side thereof. The transfer of the wafer W is performed between R2 and R4, and the shelf unit R2
Transfer unit 34 and each CHP device 6 of the shelf unit R4
Is configured to transfer the wafer W to and from the transfer arm A of the interface station S3.

The shelf unit R4 is partitioned from another space by a wall portion 81, for example, as shown in FIG.
And transfer ports 82 and 83 are formed at positions corresponding to the arm 56 of the transfer arm A. The transfer ports 82 and 83 are configured to be openable and closable by shutters 84 and 85, respectively.

In each CHP device 6, for example, a filter for purifying air, and when a chemically amplified resist is used, an acid component is added to remove alkali components such as ammonia component and amine in the air. A filter unit F3 provided with a chemical filter, a suction fan and the like is provided so as to cover the upper side, and while the atmosphere collected from the lower side is exhausted, a part is introduced into the filter device 83. The air purified by the filter device 83 is blown out as a down flow into each part via the filter unit F3.

The filter device 83 is provided with an impurity removing section for removing impurities, a heating mechanism and a humidifying mechanism, a sending section for sending air, and the like. The air adjusted to a predetermined temperature and a predetermined humidity is sent out,
This prevents alkali components from entering this region.

The shelf unit R5 of the interface station S3 is provided with multiple shelves for holding the wafer W on standby when transferring the wafer W from the exposure apparatus S4 to the CHP device 6 of the shelf unit R4. The shelf unit R5 is provided at a position accessible by the transfer arm A. Also in this example, the temperature inside the interface station S3 is such that the progress of the resist resolution reaction is suppressed and dew condensation does not occur, for example, 10 to 15 ° C.
Temperature is adjusted. Other configurations are the same as those of the above-described substrate processing apparatus, and the configuration of each shelf unit R is also the same as described above.

In this example, the exposed wafer W is transferred by the transfer arm A to, for example, a shelf of the shelf unit R5.
Here, the transfer of the CHP device 6 to the heating plate 61 is awaited, and the transfer is performed by the transfer arm A to the predetermined CHP device 6. At this time, the inside of the interface station S3 is 10
Since the temperature is adjusted to about 15 ° C., the exposure apparatus S4
→ The transfer to the heating plate 61 can be performed in a state where the progress of the resist resolution reaction is suppressed, and the uniformity of the development processing can be improved.

Next, another example of the present invention will be described with reference to FIG. In this embodiment, instead of performing the temperature adjustment in the interface station S3, in order to suppress the progress of the resist resolution reaction when the wafer W is transferred from the exposure apparatus S4 to the heating plate 61 of the CHP apparatus 6, The transfer is performed while supplying a gas adjusted to a predetermined atmosphere onto the wafer W.

In this example, the transfer arm A provided at the interface station S3 for transferring the wafer W between the processing station S2 and the exposure apparatus S4 has, for example, two arms 91, as shown in FIG. The upper arm 91 holds the exposed wafer W by CHP.
Dedicated arm for transport to the device 6, lower arm 92
Is configured as a dedicated arm 92 for transferring the wafer W before exposure from the processing station S2 to the exposure apparatus S4.

Above the upper arm 91, a gas supply unit 9 for supplying a gas adjusted to a predetermined atmosphere to the wafer W supported on the arm 91 is provided. On the lower side, there is provided a blocking plate 93 for preventing the gas adjusted to the predetermined atmosphere from hitting the wafer W supported on the lower arm 92.

The gas supply section 9 has, for example, a flat cylindrical shape, and is supported by the support arm 96 such that a circular opening surface 95 having a large number of gas supply holes 94 faces the wafer W on the arm 91. The back of the base 52 (arm 51
On the back in the direction of travel). The opening surface 95 of the gas supply unit 9 is set to have a size capable of supplying air to a region larger than the wafer W supported on the arm 51.

The gas supply section 9 has a predetermined temperature, for example, a temperature at which the impurities are removed, and which is a temperature at which the progress of the resolution reaction of the resist is suppressed and no dew condensation occurs.
A gas adjusted to 15 ° C. and a predetermined humidity, for example, air is supplied from the filter device 97 via the gas supply pipe 98, whereby the air is supplied to the gas supply holes 9.
The wafer 4 is sent out onto the wafer W held by the arm 51 via 4. Here, the filter device 97 includes an impurity removing section for removing impurities, a heating mechanism and a humidifying mechanism, a sending section for sending air, and the like. Further, the blocking plate 93 includes a wafer W supported on the lower arm 92.
The size is set to cover a region larger than the wafer W supported on the arm 92 in order to prevent the gas from the gas supply unit from hitting the wafer W.

In such an embodiment, the transfer arm A
When the wafer W is transferred from the exposure apparatus S4 to the CHP apparatus 6, the air adjusted to a temperature that does not cause condensation on the wafer W is supplied, so that the resist resolution reaction does not easily proceed. For this reason, the resist can be transported to the CHP device 6 in a state where the progress of the resolution reaction is suppressed, so that uniform processing can be performed while suppressing the occurrence of development unevenness.

Here, in this example, as the gas supplied onto the wafer W, in addition to air, an inert gas such as nitrogen, a mixed gas of air and an inert gas, or the like can be used. Further, an arm 91 for transporting the exposed wafer W is provided on the lower side,
An arm 92 for transporting the wafer W before exposure may be provided on the upper side, or the gas supply unit 9 is not integrally attached to the transport arm A, but a gas is supplied onto the wafer W held by the arm 91. It is good also as a structure provided separately as possible.

Further, an example in which the transfer is performed while supplying a gas adjusted to a predetermined temperature onto the wafer W, and an example in which the temperature control of the transfer area itself is performed may be combined. In such a case, the exposed wafer W is subjected to CHP in a state where the progress of the resist resolution reaction is further suppressed.
It can be transported to the device 6.

In the above description, the temperature control of the transfer area and the like is performed. However, the progress of the resist resolution reaction may be suppressed by controlling the amount of water adhering to the wafer W. That is, the acetal-based chemically amplified resist requires a humidity of about 45% during the resolution reaction of the resist, and has a property that the resolution reaction hardly occurs when the humidity is not sufficient. For this reason, the humidity in the transfer area is set to a low-humidity state where the humidity is lower than, for example, about 20% or less, and the wafer W is kept on standby for a predetermined time or more. If the amount of water adhering to the wafer W at the time of transfer to the wafer is made smaller, the progress of the resist resolution reaction can be considerably suppressed.

More specifically, a gas whose humidity has been adjusted by the filter device 73 or the like may be supplied to the interface station S3 or the gas supply unit 9. Here, as a gas supplied into the interface station S3 or the like, air, an inert gas such as a nitrogen gas, a mixed gas of air and an inert gas, or the like can be used.

Further, in the transfer region of the wafer W, the temperature control of the transfer region and the management of the amount of moisture adhering to the wafer may be performed in combination. In this case, the progress of the resist resolution reaction is further suppressed. Therefore, higher uniformity of the development line width can be ensured.

The CHP device 6 may be installed not only in the interface station S3 but also in the processing station S2. However, when the temperature and humidity in the transport area between the exposure device S4 and the CHP device 6 are likely to change. In
The shorter the transport time, the more the degree of progress of the resist resolution reaction at the time of the transport is uniform. Therefore, it is desirable to install the CHP device 6 in the interface station S3, and further to install it near the exposure device S4. desirable.

Further, the gas supply unit 9 may be configured as shown in FIGS. 15 and 16, for example. In this embodiment, for example, as shown in FIG.
The inert gas sent from 0 to the gas supply unit 9 via the adjustment unit 101 which functions as a temperature adjustment unit and a humidity adjustment unit is supplied to the gas on the opening surface 102 (corresponding to the opening surface 94 shown in FIG. 14). Wafer W on arm 91 from supply hole 103
It is to be supplied to. The gas supply hole 103 is shown in FIG.
5 may be provided corresponding to the shape of the arm 91, or may be provided corresponding to the circular shape of the wafer W as shown in FIG.

With such a configuration, the present invention is not limited to the case where the wafer W after the exposure and before the development is transferred to, for example, the heating plate 61. It is possible to suppress hydrolysis of the resist due to moisture in the air, and the effect of bonding with oxygen in the air to affect the pattern resolution. If the above-mentioned inert gas is supplied when the wafer W is transferred from the coating unit C to the heating unit 31 of the shelf unit R, efficient gas supply can be performed.

In the present invention, an anti-reflection film may be formed on the surface of the wafer W before applying the resist in place of the hydrophobic treatment. The reason for forming the antireflection film is to prevent the occurrence of reflection on the lower side of the resist during exposure when a chemically amplified resist is used. Furthermore, in the present invention, the substrate is not limited to a wafer, but may be a glass substrate for a liquid crystal display.

[0081]

According to the present invention, since the substrate is transported from the exposure apparatus to the heating section in a state where the progress of the resist resolution reaction is suppressed, the uniformity of the development line width can be improved. . According to another aspect of the present invention, it is possible to suppress the adverse effects of moisture in the atmosphere and the like on the substrate being transported.

[Brief description of the drawings]

FIG. 1 is a schematic plan view showing a coating and developing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic perspective view showing the coating and developing apparatus.

FIG. 3 is a side view showing an example of a shelf unit and a developing unit of the coating and developing apparatus.

FIG. 4 is a side view showing an example of a shelf unit of the coating and developing apparatus.

FIG. 5 is a sectional view showing an example of the developing unit.

FIG. 6 is a cross-sectional view illustrating a substrate transfer unit.

FIG. 7 is a sectional view showing a CHP device provided in the shelf unit.

FIG. 8 is a perspective view showing an example of an interface station.

FIG. 9 is a sectional view showing an example of the interface station.

FIG. 10 is a side view showing an example of a CHP device and a partition wall.

FIG. 11 is an explanatory diagram showing a resolution reaction of a chemically amplified resist.

FIG. 12 is a sectional view showing another example of the coating and developing apparatus.

FIG. 13 is a cross-sectional view showing another example of a shelf unit provided with a CHP device.

FIG. 14 is a sectional view and a perspective view showing still another example of the coating and developing apparatus.

FIG. 15 is a plan view showing another example of the gas supply unit.

FIG. 16 is a plan view showing still another example of the gas supply unit.

FIG. 17 is a schematic plan view showing a conventional coating and developing apparatus.

[Explanation of symbols]

 W Semiconductor wafer S1 Cassette station S2 Processing station S3 Interface station S4 Exposure device 23 Delivery arm 6 CHP device C Coating unit D Developing unit R Shelf unit MA Substrate transporting means A Transport arm

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) B65G 49/00 B65G 49/06 Z 49/06 49/07 C 49/07 G03F 7/38 511 G03F 7 / 38 511 H01L 21/68 A H01L 21/68 21/30 568

Claims (21)

[Claims] 1. A resist-coated and exposed substrate is heated by a heating unit to cause a resist resolution reaction to proceed, and then the substrate is cooled to suppress the progress of the resist resolution reaction.
Next, in a substrate processing method for applying a developing solution to a substrate, the exposed substrate is transported to a heating unit while suppressing a resolution reaction of a resist. 2. The substrate processing method according to claim 1, wherein the exposed substrate is cooled so that dew condensation does not occur, and the resist is conveyed to a heating unit while suppressing the progress of a resist resolution reaction. . 3. The progress of the resist resolution reaction is suppressed by making the amount of moisture attached to the substrate when transported to the heating unit smaller than the amount of moisture attached to the substrate after exposure. The substrate processing method according to claim 1, wherein the substrate is transferred to a heating unit while the substrate is heated. 4. A method in which the exposed substrate is transported to a heating unit while supplying a gas having a lower humidity than air, so that the amount of moisture adhering to the substrate when transported to the heating unit is determined. 4. The substrate processing method according to claim 3, wherein the amount of moisture is smaller than the amount of water adhering to the subsequent substrate. 5. The substrate processing method according to claim 1, wherein the resist is a chemically amplified resist in which an acid generated by exposure advances a resolution reaction of the resist. 6. An exposure section for exposing a substrate coated with a resist, a heating section for heating the exposed substrate to advance a resolution reaction of the resist, and cooling the heated substrate. A cooling section for suppressing the progress of the resolution reaction of the resist, and a development processing section for performing a coating process of a developing solution on the cooled substrate. A substrate processing apparatus, wherein the substrate is transported to a heating unit by a substrate transport unit while suppressing an image reaction. 7. The substrate transfer area between the exposure section and the heating section is cooled so as to prevent dew condensation on the substrate in order to suppress a resist resolution reaction. 7. The substrate processing apparatus according to 6. 8. A transfer area of the substrate between the exposure unit and the heating unit, wherein the amount of moisture attached to the substrate when transferred to the heating unit is determined by the amount of moisture attached to the substrate after exposure. 8. The substrate processing apparatus according to claim 6, wherein a gas whose humidity is lower than that of air is supplied so as to reduce the gas flow. 9. A cassette stay comprising: a mounting portion for mounting a substrate cassette containing a plurality of substrates; and a transfer means for transferring substrates to and from the substrate cassette mounted on the mounting portion. A processing station connected to the cassette station and performing processing on the substrate transported by the transfer means; and an exposure apparatus provided on the opposite side of the cassette station to the processing station. An apparatus and an interface station connected to the opposite side of the processing station from the cassette station for transferring a substrate between the processing station and the exposure apparatus. A heating section that heats the exposed substrate to advance a resolution reaction of the resist; and a cooling section that cools the substrate heated by the heating section, and A cooling section that suppresses the progress of the developing process, and a developing section that performs a coating process of a developing solution on the substrate. A substrate processing apparatus characterized by being cooled so as not to generate. 10. A cassette stay comprising: a mounting portion for mounting a substrate cassette containing a plurality of substrates; and a transfer means for transferring substrates to and from the substrate cassette mounted on the mounting portion. A processing station connected to the cassette station and processing the substrate conveyed by the transfer means;
The exposure device is provided on the opposite side of the cassette station of the processing station, and is connected to the opposite side of the cassette station of the processing station to transfer the substrate between the processing station and the exposure device. Interface stay
The interface station includes a heating unit that heats the exposed substrate to advance a resolution reaction of the resist, and the processing station cools the substrate heated by the heating unit. A cooling unit that suppresses the progress of the resolution reaction of the resist; and a development processing unit that performs a coating process of the developing solution on the substrate, wherein the interface station suppresses the progress of the resolution reaction of the resist. The substrate processing apparatus is cooled so that dew condensation does not occur on the substrate. 11. The interface station according to claim 1, further comprising: The substrate processing apparatus according to claim 9, wherein a gas having a low temperature is supplied. 12. A gas supply unit for supplying a gas whose temperature and / or humidity is adjusted to a surface to be processed of the substrate while the substrate is transported from the exposure unit to the heating unit. Claim 6, 7, 8, 9, 10 or 1 characterized by the above-mentioned.
2. The substrate processing apparatus according to 1. 13. The temperature and / or humidity of the gas supplied from the gas supply unit to the surface to be processed of the substrate is controlled so as to suppress the progress of the resist resolution reaction. 13. The substrate processing apparatus according to 12. 14. The resist according to claim 6, wherein said resist is a chemically amplified resist in which an acid generated by exposure promotes a resolution reaction of the resist.
14. The substrate processing apparatus according to 0, 11, 12, or 13. 15. A coating processing unit for forming a coating film on a substrate, a development processing unit for developing the substrate, a heating unit for heating the substrate, a coating processing unit, a development processing unit, A substrate processing apparatus, comprising: a substrate transport unit that carries the substrate in and out of a heating unit; and a gas supply unit that supplies an inert gas to the substrate transported by the substrate transport unit. . 16. The substrate transfer means has an arm for holding a substrate, and the gas supply section has an opening surface formed with a gas supply hole for supplying an inert gas from above the arm. 16. The substrate processing apparatus according to claim 15, wherein: 17. The substrate processing apparatus according to claim 16, wherein a plurality of gas supply holes are formed corresponding to the shape of the arm. 18. The substrate processing apparatus according to claim 16, wherein a plurality of gas supply holes are formed corresponding to the shape of the substrate. 19. The apparatus according to claim 1, wherein the gas supply unit has a temperature adjusting means for adjusting the temperature of the inert gas.
19. The substrate processing apparatus according to any one of 5 to 18. 20. The gas supply unit according to claim 1, further comprising humidity adjusting means for adjusting the humidity of the inert gas.
20. The substrate processing apparatus according to any one of 5 to 19. 21. The gas supply unit according to claim 15, wherein the substrate transfer means supplies an inert gas when the substrate is transferred from the coating unit to the heating unit.
0. The substrate processing apparatus according to any one of the above items.