JP2014140003A - Substrate thermal treatment apparatus, substrate thermal treatment method, and recording medium for substrate thermal treatment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device and a method which perform thermal treatment on a substrate in sufficiently uniform temperature distribution, and to provide a recording medium.SOLUTION: A heating/cooling unit U2 includes: a heat plate 10 which supports a wafer W horizontally placed and heats the wafer W; a light radiation part 14 which radiates light for facilitating a reaction progressed by heating of the heat plate 10 to the wafer W; a horizontal transfer part 24 which transfers a light source 23 of the light radiation part 14 or the wafer W in a horizontal direction and thereby moves a light radiation position over an entire region of a treatment object portion of the wafer W; and a control part 15 which controls the light radiation part 14 and the horizontal transfer part 24 thereby adjusting an amount of radiation light for each radiation position.

Description

  The present invention relates to an apparatus, a method, and a recording medium for performing a heat treatment of a substrate.

  In the semiconductor manufacturing process, heat treatment of a wafer (substrate) is performed in order to advance various reactions. One wafer is cut into a large number of semiconductor chips. Since the heat treatment temperature of the wafer affects the quality of the semiconductor chip, if the temperature distribution of the wafer in the heat treatment is not uniform, the quality of the semiconductor chip may vary. For example, in a photolithography process for forming a resist pattern on the surface of a wafer, a heat treatment called post-exposure bake (PEB) is performed between the exposure process and the development process of the resist film. If the temperature distribution of the wafer is not uniform in the PEB process, the line width of the resist pattern varies, which may cause variations in the quality of the semiconductor chip.

  As a technology for making the temperature distribution of the wafer uniform during heat treatment, a heat plate divided into a plurality of parts (hereinafter referred to as plate portions), a heater built in each plate portion, and a control for controlling each heater individually. The heat processing apparatus provided with a part is disclosed (for example, refer patent document 1).

JP 2002-353110 A

  However, in the heat treatment apparatus described in Patent Document 1, since it is necessary to incorporate a heater in each plate portion, there is a limit to the subdivision of the hot plate. If the hot plate cannot be sufficiently subdivided, a portion of the wafer having a temperature higher than the target value and a portion having a temperature lower than the target value may be located on one plate portion. In such a case, the progress of the reaction in each part of the wafer cannot be made sufficiently uniform.

  Therefore, an object of the present invention is to provide a substrate heat treatment apparatus, a substrate heat treatment method, and a substrate heat treatment recording medium that can improve the uniformity of the progress of reaction in each part of the substrate.

  A substrate heat treatment apparatus according to the present invention includes a heat plate that supports and heats a horizontally disposed substrate, a light irradiation unit that irradiates the substrate with light for promoting a reaction that proceeds by heating with the heat plate, Irradiation by controlling the light transfer unit and the horizontal transfer unit, the horizontal transfer unit that moves the irradiation position of the light over the entire area of the processing target portion of the substrate by transferring the light source or the substrate of the irradiation unit in the horizontal direction. And a controller that adjusts the amount of light emitted for each position.

  According to such a substrate heat treatment apparatus, a heating step of horizontally placing and heating the substrate on the hot plate, and a light irradiation step of irradiating the substrate with light for promoting a reaction that proceeds by heating with the hot plate, Can be executed. In the light irradiation step, the light irradiation position is moved over the entire processing target portion of the substrate by moving the light source or the substrate in the horizontal direction. Thereby, each part of a board | substrate receives irradiation of light in a light irradiation process in addition to being heated with a hot plate in a heating process. In the light irradiation step, the degree of reaction promotion can be freely adjusted for each portion of the substrate by adjusting the amount of light irradiated for each irradiation position. For this reason, the uniformity of the progress of the reaction in each part of the substrate can be improved. Further, since light can be irradiated to the entire area of the substrate to be processed by transferring the light source or the substrate, the number of light sources can be reduced.

  The light irradiation unit includes a plurality of light sources arranged linearly along the radial direction of the substrate, and the horizontal transfer unit is configured to transfer the light source or the substrate in a direction orthogonal to the direction in which the light sources are arranged, and the control unit May control the light irradiation unit so as to adjust the amount of emitted light for each light source. In this case, it is possible to irradiate the entire area of the processing target portion of the substrate without transferring the light source or the substrate in the direction in which the light sources are arranged, thereby simplifying the structure of the horizontal transfer portion. In addition, the distribution of the irradiation light quantity in the transfer direction of the light source or the substrate can be adjusted by adjusting the irradiation light quantity according to the transfer by the horizontal transfer unit. By adjusting the amount of emitted light for each light source by the control unit, the distribution of the amount of irradiated light in the direction in which the light sources are arranged can also be adjusted. With these combinations, the light irradiation amount can be adjusted for each irradiation position.

  A rotation holding unit that holds and rotates the substrate may further be provided, and the horizontal transfer unit may transfer the light source or the substrate in the horizontal direction when the rotation holding unit rotates the substrate. In this case, it is possible to irradiate light to the entire processing target portion of the substrate only by moving the irradiation position along a line passing through the rotation center of the substrate, so that the structure of the horizontal transfer unit can be simplified.

  The hot plate may heat the substrate so that the reaction initiated by the photosensitive reaction proceeds, and the light irradiation unit may emit light for promoting the photosensitive reaction before heating by the hot plate. In this case, the reaction in the heating process can be promoted by promoting the photosensitive reaction before the heating process.

  The light irradiation unit may irradiate light for radiation heating. In this case, also in the light irradiation step, the substrate is heated, and the reaction that proceeds by heating with the hot plate can be promoted.

  The horizontal transfer unit further includes a support unit that supports the substrate and a lift unit that lifts and lowers the support unit, and the horizontal transfer unit transfers the light source or the substrate in a state where the light source is located below the substrate raised by the support unit and the lift unit. The light irradiation unit may be configured to irradiate the back surface of the substrate with light. In this case, even if a metal layer or the like is formed on the surface of the substrate, the substrate can be irradiated without being disturbed by the metal layer or the like, so that the substrate can be efficiently heated in the light irradiation step.

  The substrate further supports and cools the substrate, and further includes a cooling plate that carries the substrate into and out of the hot plate, and the horizontal transfer unit horizontally moves the cooling plate to carry the substrate. The light source may be fixed to the cooling plate or a peripheral portion of the cooling plate. In this case, the whole apparatus can be simplified by utilizing the cooling plate transfer unit for transferring the light source.

  In the substrate heat treatment method according to the present invention, the substrate is irradiated with light for accelerating the reaction that proceeds by heating with the heating plate, the heating step of horizontally arranging the substrate on the heating plate, and the light. A light irradiation step of moving the light irradiation position across the entire processing target portion of the substrate by moving the light source or the substrate in the horizontal direction, and in the light irradiation step, the amount of light irradiation for each irradiation position Adjust.

  In such a substrate heat treatment method, each part of the substrate is irradiated with light in the light irradiation step in addition to being heated by the hot plate in the heating step. In the light irradiation step, the degree of reaction promotion can be freely adjusted for each portion of the substrate by adjusting the amount of light irradiated for each irradiation position. For this reason, the uniformity of the progress of the reaction in each part of the substrate can be improved. Further, since light can be irradiated to the entire area of the substrate to be processed by transferring the light source or the substrate, the number of light sources can be reduced.

  In the light irradiation step, a plurality of light sources arranged linearly along the radial direction of the substrate may be used, and the light source or the substrate may be transferred in a direction orthogonal to the direction in which the light sources are arranged. In this case, the light irradiation process can be simplified because light can be irradiated to the entire area of the processing target portion of the substrate without transferring the light source or the substrate in the direction in which the light sources are arranged.

  In the light irradiation step, the light source or the substrate may be transferred in the horizontal direction while rotating the substrate. In this case, the light irradiation process can be simplified because light can be irradiated to the entire area of the processing target portion of the substrate only by moving the irradiation position along a line passing through the rotation center of the substrate.

  The light irradiation step may be performed before the heating step, the substrate may be heated so that the reaction initiated by the photosensitive reaction proceeds in the heating step, and the light for promoting the photosensitive reaction may be irradiated in the light irradiation step. In this case, the reaction in the heating process can be promoted by promoting the photosensitive reaction before the heating process.

  In the light irradiation step, radiation heating light may be irradiated. In this case, also in the light irradiation step, the substrate is heated, and the reaction that proceeds by heating with the hot plate can be promoted.

  Prior to the light irradiation step, the method further includes an ascending step for raising the substrate. In the light irradiation step, the light source or the substrate is transferred in the horizontal direction with the light source positioned below the substrate raised in the ascending step. Thus, the back surface of the substrate may be irradiated with light. In this case, even if a metal layer or the like is formed on the surface of the substrate, the substrate can be irradiated without being disturbed by the metal layer or the like, so that the substrate can be efficiently heated in the light irradiation step.

  The recording medium for substrate heat treatment according to the present invention is a computer-readable recording medium on which a program for causing an apparatus for performing heat treatment of a substrate to execute the substrate heat treatment method is recorded.

  According to the present invention, the uniformity of the progress of the reaction in each part of the substrate can be improved.

1 is a perspective view of a coating / developing apparatus to which a heating / cooling unit according to a first embodiment is applied. It is sectional drawing which follows the II-II line | wire in FIG. It is sectional drawing which follows the III-III line | wire in FIG. It is sectional drawing which follows the IV-IV line | wire in FIG. It is a top view which shows schematic structure of the heating / cooling unit which concerns on 1st Embodiment. It is a side view which shows schematic structure of the heating / cooling unit which concerns on 1st Embodiment. It is a side view which shows the state which has arrange | positioned the wafer on the cooling plate. It is a side view which shows the state which carried in the wafer on the hot platen. It is a side view which shows the state which raised the wafer on a cooling plate with the support arm. It is a side view which shows the state which retracted the cooling plate from under the wafer. It is a side view which shows the state which dropped the wafer and mounted on the hot platen. It is a side view which shows the state which raised the wafer on a hot plate by the support arm. It is a side view which shows the state which irradiates the infrared light to the back surface of a wafer. It is a side view which shows the state which the light source passed under the board | substrate. It is a side view which shows the state which lowered the wafer and mounted on the cooling plate. It is a side view which shows the state which carried the wafer out on the hot platen. It is a top view which shows schematic structure of the heating / cooling unit which concerns on 2nd Embodiment. It is a side view which shows schematic structure of the heating / cooling unit which concerns on 2nd Embodiment. It is a top view which shows schematic structure of the heating / cooling unit which concerns on 3rd Embodiment. It is a side view which shows schematic structure of the heating / cooling unit which concerns on 3rd Embodiment. It is a top view which shows the other example of arrangement | positioning of the light irradiation part in FIG. It is a side view which shows schematic structure of the heating / cooling unit which concerns on 4th Embodiment. It is a front view which shows schematic structure of the heating / cooling unit which concerns on 4th Embodiment. It is a top view which shows the other example of arrangement | positioning of the light irradiation part in FIG. It is a top view which shows the further example of arrangement | positioning of the light irradiation part in FIG. It is sectional drawing which shows schematic structure of the heating / cooling unit which concerns on 5th Embodiment. It is sectional drawing which shows the state which is raising the wafer on a hot plate with a support pin. It is sectional drawing which shows the state which irradiates light to the back surface of a wafer. It is a side view which shows the other example of arrangement | positioning of the light irradiation part in FIG.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of a substrate heat treatment apparatus according to the present invention will be described in detail with reference to the drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and redundant description is omitted.

[First Embodiment]
The heating / cooling unit constituting the substrate heat treatment apparatus of the first embodiment is an apparatus for heating and cooling a wafer in a wafer coating / developing apparatus which is a kind of substrate. First, an example of a coating / developing apparatus to which the heating / cooling unit is applied will be described. As shown in FIGS. 1 to 4, the coating / developing apparatus 1 includes a carrier block S1, a processing block S2 adjacent to the carrier block S1, and an interface block S3 adjacent to the processing block S2. Hereinafter, “front / rear / left / right” in the description of the coating / developing apparatus 1 means a direction in which the interface block S3 side is the front side and the carrier block S1 side is the rear side.

  The carrier block S1 includes a carrier station 3 for installing a plurality of carriers 2, and a loading / unloading unit 4 interposed between the carrier station 3 and the processing block S2. The carrier 2 accommodates a plurality of wafers W in a sealed state, and is detachably installed on the carrier station 3. On the side surface 2a side of the carrier 2, an opening / closing door (not shown) for taking in and out the wafer W is provided. The loading / unloading unit 4 is provided with opening / closing doors 4 a corresponding to the plurality of carriers 2 installed in the carrier station 3. In the carry-in / carry-out unit 4, a delivery arm A <b> 1 is accommodated which takes out the wafer W from the carrier 2 installed in the carrier station 3 and transfers it to the processing block S <b> 2 and receives the wafer W from the processing block S <b> 2 ing.

  The processing block S2 includes a lower antireflection film formation (BCT) block 5 that forms a lower antireflection film on the surface of the wafer W, and a resist film formation (COT) that forms a resist film on the lower antireflection film. It has a block 6, an upper antireflection film formation (TCT) block 7 for forming an upper antireflection film on the resist film, and a development processing (DEV) block 8 for performing development processing. These blocks are stacked in the order of the DEV block 8, the BCT block 5, the COT block 6, and the TCT block 7 from the floor surface side.

  The BCT block 5 accommodates a coating unit (not shown) for applying a chemical solution for forming an antireflection film, a heating / cooling unit (not shown), and a transfer arm A2 for transferring the wafer W to these units. ing. Similarly, the TCT block 7 accommodates a coating unit, a heating / cooling unit, and a transfer arm A4.

  As shown in FIGS. 2 and 3, the COT block 6 includes a coating unit U5 for applying a chemical solution for forming a resist film, a heating / cooling unit U6, and a transfer arm A3 for transferring the wafer W to these units. And is housed.

  As shown in FIGS. 2 and 4, the DEV block 8 includes a plurality of development processing units U 1, a plurality of heating / cooling units (substrate heat treatment apparatuses) U 2, and a transfer arm that transfers the wafer W to these units. A5 and a direct transfer arm A6 for transferring the wafer W between before and after the processing block S2 without passing through these units are accommodated. The plurality of development processing units U1 are arranged in the front-rear direction on the right side of the DEV block 8, and are stacked in two upper and lower stages. The plurality of heating / cooling units U <b> 2 are arranged in the front-rear direction on the left side of the DEV block 8. The transport arm A5 is provided between the development processing unit U1 and the heating / cooling unit U2, and is movable in the front-rear direction and the vertical direction. The direct transfer arm A6 is provided in the upper part of the DEV block 8, and is movable in the front-rear direction.

  A shelf unit U3 is provided on the rear side of the processing block S2 so as to extend from the floor surface to the TCT block 7. The shelf unit U3 is partitioned into a plurality of cells C30 to C38 arranged in the vertical direction. In the vicinity of the shelf unit U3, an elevating arm A7 that can move up and down to transfer the wafer W between the cells C30 to C38 is provided. A shelf unit U4 is provided on the front side of the processing block S2 so as to extend from the floor surface to the upper part of the DEV block 8. The shelf unit U4 is partitioned into a plurality of cells C40 to C42 arranged in the vertical direction.

  The interface block S3 is connected to the exposure apparatus E1. The interface block S3 houses a delivery arm A8 that delivers the wafer W from the shelf unit U4 of the processing block S2 to the exposure apparatus E1, and receives the wafer W from the exposure apparatus E1 and returns it to the shelf unit U4.

  In such a coating / developing apparatus 1, first, a carrier 2 containing a plurality of wafers W is installed in a carrier station 3. At this time, one side surface 2 a of the carrier 2 is directed to the opening / closing door 4 a of the carry-in / carry-out unit 4. Next, the opening / closing door of the carrier 2 and the opening / closing door 4a of the loading / unloading section 4 are both opened, and the wafer W in the carrier 2 is taken out by the transfer arm A1, and one of the shelf units U3 of the processing block S2 is selected. It is sequentially conveyed to the cell.

  The wafers W transferred to any cell of the shelf unit U3 by the transfer arm A1 are sequentially transferred to the cell C33 corresponding to the BCT block 5 by the lifting arm A7. The wafer W transferred to the cell C33 is transferred to each unit in the BCT block 5 by the transfer arm A2, and a lower antireflection film is formed on the surface of the wafer W.

  The wafer W on which the lower antireflection film is formed is transferred to the cell C34 above the cell C33 by the transfer arm A2. The wafer W transferred to the cell C34 is transferred to the cell C35 corresponding to the COT block 6 by the lifting arm A7. The wafer W transferred to the cell C35 is transferred to the coating unit U5 in the COT block 6 by the transfer arm A3, and a chemical solution for forming a resist film is applied on the lower antireflection film. The wafer W after applying the chemical solution is transferred to the heating / cooling unit U6 by the transfer arm A3 and subjected to pre-baking (PAB) processing. As a result, a resist film is formed on the lower antireflection film of the wafer W.

  The wafer W on which the resist film is formed is transferred to the cell C36 above the cell C35 by the transfer arm A3. The wafer W transferred to the cell C36 is transferred to the cell C37 corresponding to the TCT block 7 by the lifting arm A7. The wafer W transferred to the cell C37 is transferred to each unit in the TCT block 7 by the transfer arm A4, and an upper antireflection film is formed on the resist film of the wafer W.

  The wafer W on which the upper antireflection film is formed is transferred to the cell C38 above the cell C37 by the transfer arm A4. The wafer W transferred to the cell C38 is directly transferred to the cell C32 corresponding to the transfer arm A6 by the lift arm A7, and transferred directly to the cell C42 of the shelf unit U4 by the transfer arm A6. The wafer W transferred to the cell C42 is transferred to the exposure apparatus E1 by the transfer arm A8 of the interface block S3, and a resist film exposure process is performed.

  For the exposure processing, for example, ArF excimer laser light, KrF excimer laser light, EUV (Extreme Ultraviolet) light, or the like is used. By the exposure process, a photosensitive reaction proceeds in the resist film. When ArF excimer laser light or KrF excimer laser light is used, a reaction for generating an acid proceeds. When EUV light is used, a reaction for generating an acid generating component that promotes acid generation proceeds. The acid generating component is, for example, a secondary electron. The wafer W after the exposure processing is transferred to the cells C40 and C41 below the cell C42 by the transfer arm A8.

  The wafer W transferred to the cells C40 and C41 is transferred to the heating / cooling unit U2 in the DEV block 8 by the transfer arm A5, and subjected to a post-exposure bake (PEB) process. By PEB treatment, an acid catalyst reaction proceeds in the resist film, and the solubility of the resist film changes. When the resist film is a positive type, an alkali-insoluble resin in the resist film becomes alkali-soluble by the progress of a deprotection reaction using an acid as a catalyst. When the resist film is negative, the alkali-soluble resin in the resist film becomes alkali-insoluble due to the progress of a crosslinking reaction using an acid as a catalyst.

  The wafer W after the PEB processing is transferred to the development processing unit U1 by the transfer arm A5, and development processing is performed. The wafer W after the development processing is transferred to the heating / cooling unit U2 by the transfer arm A5, and post-baking processing is performed. The wafer W after the post-baking process is transferred to the cells C30 and C31 corresponding to the DEV block 8 in the shelf unit U3 by the transfer arm A5. The wafer W transferred to the cells C30 and C31 is transferred to a cell accessible by the transfer arm A1 by the lift arm A7 and returned to the carrier 2 by the transfer arm A1.

  The configuration of the coating / developing apparatus 1 is merely an example. The coating / developing apparatus only needs to include a liquid processing unit such as a coating unit and a development processing unit, a pre-processing / post-processing unit such as a heating / cooling unit, and a transport device. The type, layout, etc. can be changed as appropriate.

  Next, the heating / cooling unit U2 constituting the substrate heat treatment apparatus will be described in detail. As shown in FIGS. 5 and 6, the heating / cooling unit U <b> 2 includes a hot plate 10, a cooling plate 11, a cooling plate transfer unit 12, an elevating unit 13, a light irradiation unit 14, and a control unit 15. It has. The hot plate 10 has a substantially disk shape and is arranged horizontally. The diameter of the hot plate 10 is larger than the diameter of the wafer W. A heating element such as a heater is built in the hot plate 10. The cooling plate 11 has a substantially disc shape and is disposed adjacent to the hot plate 10 horizontally. The diameter of the cooling plate 11 is larger than the diameter of the wafer W. Inside the cooling plate 11, cooling elements such as a cooling fluid flow path and a Beltier element are incorporated. The lower surface 11 a of the cooling plate 11 is located above the upper surface 10 a of the hot plate 10. Hereinafter, “front and rear, left and right” in the description of the heating / cooling unit U2 means a direction in which the hot plate 10 side is the front side and the cooling plate 11 side is the rear side.

  The cooling plate transfer part 12 is arrange | positioned under the cooling plate 11, and transfers the cooling plate 11 along the front-back direction. The transfer range of the cooling plate 11 by the cooling plate transfer unit 12 extends over the hot plate 10. The cooling plate transfer unit 12 includes a moving body 16 that moves along the front-rear direction and a transfer actuator (not shown) that transfers the moving body 16. The upper part of the moving body 16 is fixed below the rear portion of the cooling plate 11, and the cooling plate 11 is cantilevered by the moving body 16.

  The elevating unit 13 includes two elevating column bodies 17 disposed on the left and right sides of the hot plate 10 and elevating actuators (not shown) that elevate the elevating column bodies 17. The upper end 17a of the elevating column body 17 is positioned at a height equal to or lower than the upper surface 10a of the hot plate 10 in a state where the elevating unit 13 has lowered the elevating column body 17 most. Two supporting arms (supporting portions) 18 projecting toward the hot plate 10 are respectively fixed to the front and rear of the upper and lower ends of the elevating column body 17. The tip 18 a of the support arm 18 is located inside the peripheral edge 10 b of the hot plate 10. The distance between the left support arm 18 and the right support arm 18 is smaller than the diameter of the wafer W. On the upper surface 10 a of the hot plate 10, a recess 10 c that accommodates the support arm 18 that is lowered together with the elevating column 17 is formed. The cooling plate 11 is formed with a recess 11 c for allowing the support arm 18 to pass over the hot plate 10. Instead of forming the recess 11c, the diameter of the cooling plate 11 may be smaller than the distance between the support arms 18.

  The light irradiation unit 14 includes a connecting plate 21, a light source support arm 22, and a plurality of light sources 23. The connecting plate 21 is fixed below the front portion of the cooling plate 11 and protrudes forward from the peripheral edge 11 b of the cooling plate 11. The light source support arm 22 is provided at the front portion of the connecting plate 21 and extends from the side edge of the connecting plate 21 to the left and right. The length of the light source support arm 22 is larger than the diameter of the wafer W.

  The light source 23 is a light emitting element that emits radiation heating light upward, and emits light by electric power supplied from a power supply circuit (not shown). The light for radiation heating is, for example, infrared light. When the wafer W is a silicon wafer, the wavelength of infrared light is preferably 850 to 1000 nm. Examples of the light emitting element include an LED, a semiconductor laser, and a halogen lamp.

  The plurality of light sources 23 are arranged in a line over the entire length of the light source support arm 22 and are fixed on the light source support arm 22. Since the light source 23 is fixed to the periphery of the cooling plate 11 via the light source support arm 22 and the connecting plate 21, the cooling plate transfer unit 12 functions as a horizontal transfer unit 24 that transfers the light source 23 in the horizontal direction. Thereby, the cooling plate transfer part 12 which transfers the cooling plate 11 is utilized also for transfer of the light source 23, and the structure of the heating / cooling unit U2 is simplified. The light source 23 may be directly fixed to the cooling plate 11. The horizontal transfer unit 24 transfers the light source 23 in the front-rear direction, that is, in a direction orthogonal to the direction in which the light sources 23 are arranged. When the position of the light source support arm 22 and the position of the center of the wafer W are aligned in the front-rear direction, the plurality of light sources 23 are arranged in a straight line along the radial direction of the wafer W.

  The control unit 15 is a control computer, and includes a display unit (not shown) for displaying a setting screen for heating / cooling conditions, an input unit (not shown) for inputting heating / cooling conditions, and computer-readable recording. And a reading unit (not shown) for reading a program from a medium. In the recording medium, a program for causing the control unit 15 to perform the heating / cooling process is recorded, and this program is read by the reading unit of the control unit 15. Examples of the recording medium include a hard disk, a compact disk, a flash memory, a flexible disk, and a memory card. The control unit 15 includes a hot plate 10, a cooling plate 11, a cooling plate transfer unit 12, an elevating unit 13, and a light irradiation unit according to the heating / cooling conditions input to the input unit and the program read by the reading unit. 14 is controlled and heating / cooling processing is executed. Hereinafter, as an example of the heat treatment using the heating / cooling unit U2 controlled by the control unit 15, the procedure of the PEB process will be described.

  First, the control unit 15 controls the hot plate 10 to generate heat in the heater in the hot plate 10 and raises the temperature of the hot plate 10 to a set temperature. In this state, the wafer W after the exposure processing is transferred to the heating / cooling unit U2 by the transfer arm A5 described above, and is placed on the cooling plate 11 as shown in FIG. Next, the control unit 15 controls the cooling plate transfer unit 12 to transfer the moving body 16 forward, thereby transferring the cooling plate 11 onto the hot plate 10 as shown in FIG. As a result, the wafer W is carried onto the hot plate 10.

  Next, the control unit 15 controls the elevating unit 13 to raise the elevating column body 17. Then, the support arm 18 at the upper end of the elevating column body 17 comes into contact with the back surface Wb of the wafer W. When the elevating column body 17 is further raised, the wafer W is pushed up and separated from the cooling plate 11 as shown in FIG. Next, the control unit 15 controls the cooling plate transfer unit 12 to transfer the moving body 16 backward, thereby retracting the cooling plate 11 from below the wafer W as shown in FIG. Next, the control unit 15 controls the elevating unit 13 to lower the elevating column 17 so that the wafer W is placed on the hot plate 10 as shown in FIG. The wafer W is heated (heating process). Thereby, the acid-catalyzed reaction described above proceeds.

  When a preset heating time has elapsed, the control unit 15 controls the elevating unit 13 to raise the elevating column body 17 (ascending step). As a result, the wafer W is pushed up and separated from the hot plate 10 as shown in FIG. Next, the control unit 15 controls the light irradiation unit 14 to cause the light source 23 to emit light, and controls the horizontal transfer unit 24 to transfer the light source 23 forward. As a result, the light source 23 passes below the wafer W as shown in FIGS. 13 and 14. Since a plurality of light sources 23 are arranged in the left-right direction and the light sources 23 move along the front-rear direction, infrared light is irradiated on the entire back surface Wb of the wafer W. The wafer W is radiantly heated by irradiation with infrared light (light irradiation step). Thereby, the acid-catalyzed reaction described above further proceeds. That is, the reaction that proceeds by heating with the hot plate 10 is promoted. Note that it is not necessary to irradiate the entire area of the back surface Wb of the wafer W with infrared light, and it is sufficient to irradiate at least the processing target portion with light. The processing target part is a part used as a semiconductor chip after the wafer W is cut, for example.

  Thus, since the light can be irradiated to the entire area of the processing target portion of the wafer W without transferring the light source 23 in the left-right direction in which the light sources 23 are arranged, the structure of the horizontal transfer unit 24 is simplified. Further, since the infrared light is applied to the back surface Wb of the wafer W, even if a metal layer or the like is formed on the front surface Wa of the wafer W, the light is applied to the wafer W without being obstructed by the metal layer or the like. Can be irradiated. For this reason, the wafer W can be efficiently heated in the light irradiation step. Note that the object to be heated in the PEB process is a resist film, but the resist film is less likely to absorb infrared light than the wafer W and is less likely to be radiantly heated. For this reason, in order to efficiently heat the resist film, it is necessary to heat the wafer W by irradiation with infrared light and to transfer heat from the wafer W to the resist film. Accordingly, it is effective to irradiate the back surface Wb with infrared light even in the PEB process in which the resist film formed on the front surface Wa of the wafer W is heated.

  In the light irradiation step, the control unit 15 adjusts the amount of light emitted from the light source 23 according to the transfer of the light source 23. Thereby, the distribution of the irradiation light quantity in the front-rear direction is adjusted. The distribution of the amount of irradiation light in the front-rear direction can also be adjusted by adjusting the transfer speed of the light source 23 by the horizontal transfer unit 24. For example, when the transfer speed of the light source 23 is changed, the amount of irradiation light increases in a portion where the light source 23 passes at a low speed, and the amount of irradiation light decreases in a portion where the light source 23 passes at a high speed.

  Further, in the light irradiation step, the control unit 15 controls the light irradiation unit 14 so as to adjust the emitted light amount of the infrared light for each light source 23. Thereby, the distribution of the irradiation light quantity in the left-right direction is adjusted. Note that all the light sources 23 arranged on the light source support arm 22 may be divided into a plurality of groups each including a plurality of light sources 23, and the amount of emitted light may be adjusted for each group. That is, adjusting the amount of emitted light for each group of light sources 23 is also included in adjusting the amount of emitted light for each light source 23.

  In this way, by adjusting the distribution of the irradiation light amount in the left-right direction and the distribution of the irradiation light amount in the front-rear direction, the irradiation light amount is adjusted for each irradiation position. For example, the control unit 15 adjusts the amount of irradiation light for each irradiation position based on a target value set in advance for each irradiation position.

  Next, the control unit 15 controls the elevating unit 13 to lower the elevating column body 17 to place the wafer W on the cooling plate 11 as shown in FIG. Next, the control unit 15 controls the cooling plate transfer unit 12 to transfer the moving body 16 backward, thereby retracting the cooling plate 11 from above the hot plate 10 as shown in FIG. As a result, the wafer W is unloaded from the hot plate 10. Further, the wafer W is cooled by the cooling plate 11. This completes the PEB process.

  Here, the target value of the irradiation light quantity in the light irradiation process will be described in detail. The temperature of the wafer W in the PEB process tends to correlate with the line width of the resist pattern formed after the development process. For example, in a positive resist for ArF immersion exposure, the line width of the resist pattern tends to decrease as the temperature of the wafer W in the PEB process increases. Therefore, based on the line width of the resist pattern, it is possible to grasp the excess or deficiency of the temperature of the wafer W in the PEB process, and set the target value of the irradiation light amount for each irradiation position so that the excess or deficiency approaches zero.

  Specifically, a test wafer W on which a resist film is formed is prepared, and an exposure process for forming a test resist pattern is performed. A PEB process is performed on the wafer W after the exposure process. In the light irradiation process of PEB processing, a fixed temporary target value is set, and the irradiation light quantity for each irradiation position is adjusted based on the temporary target value. Development processing is performed on the wafer W after the PEB processing, and a test resist pattern is formed on the wafer W.

Next, a plurality of measurement points scattered all over the wafer W are set, and the line width CD of the test resist pattern is measured for each measurement point. The line width CD of the test resist pattern can be measured by, for example, a scatterometry method. For each measurement point, the difference ΔCD between the line width CD and the line width target value CD0 is calculated, and the temperature excess / deficiency value ΔT is calculated by the following equation.
ΔT = M · ΔCD
M is a coefficient determined according to the type of resist agent and the like. The temporary target value is corrected so that the excess / deficiency value ΔT at each measurement point approaches zero, and the target value of the irradiation light quantity for each irradiation position is set. Thus, the target value of the irradiation light quantity for each irradiation position is set. The target value set using the test wafer W can continue to be used for the subsequent PEB processing. However, the target value may be reset when the lot of the wafer W changes.

  According to the heating / cooling unit U2 described above, the heating process for horizontally placing the wafer W on the hot plate 10 and heating, and the light for promoting the reaction that proceeds by the heating by the hot plate 10 are performed on the wafer W. And a light irradiation process for irradiating the light. In the light irradiation step, by moving the light source 23 or the wafer W in the horizontal direction, the light irradiation position is moved over the entire area of the processing target portion of the wafer W. Thereby, each part of the wafer W is irradiated with light in the light irradiation step in addition to being heated by the hot plate 10 in the heating step. In the light irradiation step, the degree of reaction promotion can be freely adjusted for each portion of the wafer W by adjusting the amount of light irradiated for each irradiation position. For this reason, the uniformity of the progress of the reaction in each part of the wafer W can be improved. Furthermore, since the light can be irradiated to the entire processing target portion of the wafer W by transferring the light source 23 or the wafer W, the number of the light sources 23 can be reduced.

[Second Embodiment]
The heating / cooling unit U7 constituting the substrate heat treatment apparatus according to the second embodiment is provided with a horizontal transfer unit 24A separately from the cooling plate transfer unit 12. As shown in FIGS. 17 and 18, the horizontal transfer section 24 </ b> A has a pair of annular belts 26 arranged on the left and right of the hot plate 10. Each belt 26 is stretched over a pair of pulleys 27 and 28 arranged in the front and rear direction. The left belt 26 and the pulleys 27 and 28 are disposed between the hot plate 10 and the left lifting column 17. The right belt 26 and the pulleys 27 and 28 are disposed between the hot plate 10 and the right lifting column 17.

  The pulleys 27 and 28 each rotate about an axis extending in the left-right direction. The rotation center of the pulley 27 is located in front of the front portion of the hot plate 10. The rotation center of the pulley 28 is located behind the rear portion of the hot plate 10. One of the pulleys 27 and 28 is connected to a power source (not shown) such as a motor. The belt 26 circulates along the circumferential direction as the pulleys 27 and 28 rotate.

  The light source support arm 22 that supports the plurality of light sources 23 extends in the left-right direction and is stretched around the left and right belts 26. The horizontal transfer unit 24A circulates the belt 26 to transfer the light source support arm 22 and the light source 23 along the front-rear direction. According to the second embodiment, the same effect as that of the first embodiment can be obtained.

[Third Embodiment]
The heating / cooling unit U8 that constitutes the substrate heat treatment apparatus according to the third embodiment is one in which the light irradiation unit 14 is disposed in the carry-in / out portion of the wafer W. As shown in FIGS. 19 and 20, the carry-in / carry-out unit where the light irradiation unit 14 is arranged is located on the rear side of the cooling plate 11. In the third embodiment, the transfer arm A5 functions as a horizontal transfer unit. A transfer arm A5 as a horizontal transfer unit transfers the wafer W along the front-rear direction. That is, the transfer arm A5 transfers the wafer W in a direction orthogonal to the direction in which the light sources 23 are arranged.

  The control unit 15 performs the light irradiation process when carrying out / carrying in the wafer W to / from the heating / cooling unit U8. Specifically, the light irradiation unit 14 is controlled to cause the light source 23 to emit light, and the transfer arm A5 as a horizontal transfer unit is controlled to transfer the wafer W rearward and unload it from the heating / cooling unit U8. Alternatively, the light irradiation unit 14 is controlled to cause the light source 23 to emit light, and the transfer arm A5 as a horizontal transfer unit is controlled to transfer the wafer W forward and carry it into the heating / cooling unit U8. In any case, the wafer W passes over the light source 23. A plurality of light sources 23 are arranged in the left-right direction, and the wafer W moves along the front-rear direction above the light sources 23, so that the entire rear surface Wb of the wafer W is irradiated with infrared light.

  According to the third embodiment, the same effect as that of the first embodiment can be obtained. Moreover, when performing a light irradiation process at the time of carrying in the wafer W, a light irradiation process will precede a heating process. Radiation heating by light irradiation has a shorter temperature rise time than heating by the hot plate 10. For this reason, the time required for the heat treatment of the wafer W can be shortened by performing the light irradiation step before the heating step.

  In addition, the light irradiation part 14 may be arrange | positioned outside the heating / cooling unit U8. For example, as shown in FIG. 21, it may be arranged at a position P1 on the carrier block S1 side or a position P2 on the interface block S3 side around the shelf unit U4. Even when the light irradiation unit 14 is disposed at the position P1, the transfer arm A5 functions as a horizontal transfer unit. The light sources 23 are arranged in a direction orthogonal to the transfer direction of the wafer W by the transfer arm A5. When the light irradiation unit 14 is disposed at the position P2, the delivery arm A8 functions as a horizontal transfer unit. The light sources 23 are arranged in a direction orthogonal to the transfer direction of the wafer W by the transfer arm A8. In any case, since the light irradiation unit 14 is provided in the middle of the transfer path of the wafer W and the arms A5 and A8 are used as the horizontal transfer unit, the entire apparatus can be simplified.

[Fourth Embodiment]
The heating / cooling unit U9 that constitutes the substrate heat treatment apparatus according to the fourth embodiment uses a light irradiation unit 14 that irradiates light on the back surface Wb of the wafer W and a light irradiation unit 14A that irradiates light on the front surface Wa of the wafer W. It has been changed. As shown in FIGS. 22 and 23, the light irradiation unit 14A is arranged in the loading / unloading unit of the wafer W in the heating / cooling unit U9. The light irradiation unit 14A includes a light source 23A that emits light downward instead of the light source 23 that emits light upward. The plurality of light sources 23A are positioned above the wafer W transferred by the transfer arm A5 and are arranged in a line along the left-right direction.

  The control unit 15 performs the light irradiation process when carrying out / carrying in the wafer W to / from the heating / cooling unit U9. Specifically, the light irradiation unit 14A is controlled to cause the light source 23A to emit light, and the transfer arm A5 as a horizontal transfer unit is controlled to transfer the wafer W rearward and carry it out of the heating / cooling unit U9. Alternatively, the light irradiation unit 14A is controlled to cause the light source 23A to emit light, and the transfer arm A5 as a horizontal transfer unit is controlled to transfer the wafer W forward and carry it into the heating / cooling unit U9. In any case, the wafer W passes under the light source 23A. A plurality of light sources 23A are arranged in the left-right direction, and the wafer W moves along the front-rear direction below the light source 23A, so that the entire surface Wa of the wafer W is irradiated with infrared light.

  According to the fourth embodiment, the same effect as that of the third embodiment can be obtained. The light irradiation unit 14A may be disposed outside the heating / cooling unit U9. For example, as shown in FIG. 24, it may be arranged at the positions P1 and P2. Even when the light irradiation unit 14A is disposed at the position P1, the transfer arm A5 functions as a horizontal transfer unit. The light sources 23A are arranged in a direction orthogonal to the transfer direction of the wafer W by the transfer arm A5. When the light irradiation unit 14A is disposed at the position P2, the delivery arm A8 functions as a horizontal transfer unit. The light sources 23A are arranged in a direction orthogonal to the transfer direction of the wafer W by the transfer arm A8. In any case, since the light irradiation unit 14A is provided in the middle of the transfer path of the wafer W and the arms A5 and A8 are used as the horizontal transfer unit, the entire apparatus can be simplified.

  The light irradiation unit 14 </ b> A may irradiate light for promoting a photosensitive reaction (hereinafter referred to as “photosensitive reaction promoting light”). In this case, the control unit 15 performs a light irradiation process between the PAB process and the heating process. Examples of the light for promoting the photosensitive reaction of the resist film include ArF excimer laser light, KrF excimer laser light, i-line, g-line, EUV light, and infrared light.

  The photosensitive reaction promoting light may be the same as the light used in the exposure processing (hereinafter referred to as “exposure processing light”), but more preferably different from the exposure processing light. If the photosensitive reaction promoting light is the same as the exposure processing light, the unexposed area in the exposure process is also exposed by the photosensitive reaction promoting light, so that the selectivity between the exposed area and the unexposed area decreases. There is a fear. On the other hand, when using a photosensitive reaction promoting light different from the exposure processing light, light that acts in a complementary manner to the exposure processing light is selected as the photosensitive reaction promoting light, and the degree of reaction promotion is selectively increased in the exposure region. it can.

  For example, when EUV light is used as exposure processing light and ArF excimer laser light, KrF excimer laser light, i-line or g-line is used as photosensitive reaction acceleration light, an acid generating component such as secondary electrons is generated in the exposure processing, Acid is generated in the light irradiation step. In the exposure region, the generation of acid in the light irradiation process is accelerated by the action of the acid generating component. Therefore, the difference in the amount of acid generated becomes significant between the exposed area and the unexposed area, and the reduction of the selection system is suppressed.

  As described above, in the heating process using the hot plate 10, an acid catalytic reaction using the acid generated by the photosensitive reaction in the exposure process and the light irradiation process as a catalyst proceeds. That is, the hot plate 10 advances the reaction initiated by the photosensitive reaction. The acid catalyzed reaction is accelerated by the acid generated in the light irradiation process. That is, the photosensitive reaction promoting light also promotes the reaction that proceeds by heating with the hot plate.

  When the light irradiation unit 14A irradiates the photosensitive reaction promoting light, the control unit 15 may execute a light irradiation process between the PAB process and the exposure process. In this case, as illustrated in FIG. 25, the light irradiation unit 14 </ b> A is disposed in the COT block 6. Examples of the location of the light irradiation unit 14A include a wafer W loading / unloading unit P3 in the heating / cooling unit U6, a position P4 on the interface block S3 side around the shelf unit U4, and the like. In any case, the transfer arm A3 functions as a horizontal transfer unit, and the light source 23A is arranged in a direction orthogonal to the transfer direction of the wafer W by the transfer arm A3.

[Fifth Embodiment]
The heating / cooling unit U10 constituting the substrate heat treatment apparatus according to the fifth embodiment is obtained by adding a rotation holding unit 30 to the heating / cooling unit U2. As shown in FIGS. 26 to 28, the rotation holding unit 30 holds and rotates the wafer W above the hot plate 10. The rotation holding unit 30 includes a rotating body 31 arranged in parallel to the hot plate 10 and a rotating shaft 32 connected to the upper center of the rotating body 31. A holding unit 33 that holds the wafer W is provided below the rotator 31 so that the back surface Wb is exposed. The rotating shaft 32 is connected to a power source (not shown) such as a motor and rotates around the vertical axis together with the rotating body 31.

  The elevating part 13A of the heating / cooling unit U10 has three or more elevating pins (supporting parts) 34 that go up and down through the central part of the hot plate 10 instead of the elevating column body 17 and the support arm 18. The elevating pins 34 are arranged so as to stably support the wafer W above the hot plate 10. The elevating unit 13 elevates the wafer W on the hot plate 10 by elevating the elevating pins 34. In the state in which the elevating unit 13 lowers the elevating pins 34 most, the upper end 34 a of the elevating pins 34 is positioned below the upper surface 10 a of the hot plate 10, and the wafer W can be placed on the hot plate 10. Become. The rising height of the upper end 34 a of the lifting pins 34 is set so that the wafer W can reach the height of the holding unit 33.

  The light irradiation unit 14 </ b> B of the heating / cooling unit U <b> 10 does not have the light source support arm 22, and one or a plurality of light sources 23 are fixed on the distal end portion 21 a of the connecting plate 21. The light source 23 is disposed at the same position as the rotation center CL of the wafer W in the left-right direction. For this reason, when the light source 23 is moved along the front-rear direction, the irradiation position of the infrared light moves along a line passing through the rotation center CL of the wafer W. In the heating / cooling unit U10, the control unit 15 controls the rotation holding unit 30 in addition to the hot plate 10, the cooling plate 11, the cooling plate transfer unit 12, the elevating unit 13A, and the light irradiation unit 14B.

  When performing the light irradiation process, the control unit 15 controls the elevating unit 13 to raise the elevating pins 34 and raise the wafer W to the height of the holding unit 33 as shown in FIGS. The rotation holding unit 30 is controlled to hold the wafer W in the holding unit 33. The elevating unit 13 is controlled to lower the elevating pin 34, and the rotation holding unit 30 is controlled to rotate the rotating body 31. Thereby, the wafer W rotates. In this state, the cooling plate transfer unit 12 is controlled to transfer the light source 23 along the front-rear direction. The transfer speed of the light source 23 and the rotation speed of the wafer W are set so that the irradiation position extends over the entire area of the back surface Wb of the wafer W. Further, the transfer speed of the light source 23 and the rotation speed of the wafer W are set so that the irradiation light amount is constant over the entire processing target portion of the wafer W when the light emission amount of the light source 23 is constant. Hereinafter, the transfer speed and the rotation speed set in this way are referred to as “reference transfer speed” and “reference rotation speed”. The reference transfer speed and the reference rotation speed increase as the irradiation position approaches the rotation center CL. The controller 15 adjusts the amount of emitted light for each irradiation position by adjusting the amount of light emitted from the light source 23.

  By adjusting the transfer speed of the light source 23 and the number of rotations of the wafer W, the irradiation light quantity for each irradiation position can be adjusted. A specific description will be given of how the irradiation light quantity changes when the transfer speed and the rotation speed are changed with respect to the reference transfer speed and the reference rotation speed. When the transfer speed and the rotation speed are increased compared to the reference transfer speed and the reference rotation speed, the irradiation position moves faster, so that the amount of irradiation light for each irradiation position is reduced. Further, when the transfer speed and the rotation speed are lowered compared to the reference transfer speed and the reference rotation speed, the movement of the irradiation position becomes slow, so that the amount of irradiation light for each irradiation position increases.

  According to the fifth embodiment, the same effect as that of the first embodiment can be obtained. 29, the rotation holding unit 30 may be disposed at a location different from the upper side of the hot plate 10 and the light irradiation unit 14C and the horizontal transfer unit 24B may be provided below the rotation holding unit 30. .

  The preferred embodiments of the present invention have been described above. However, the present invention is not necessarily limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. For example, the horizontal transfer unit may be configured to transfer the light source 23 or the wafer W in both the front-rear direction and the left-right direction.

  DESCRIPTION OF SYMBOLS 10 ... Hot plate, 11 ... Cooling plate, 12 ... Cooling plate transfer part, 13, 13A ... Elevating part, 14, 14A, 14B, 14C ... Light irradiation part, 15 ... Control part, 18 ... Support arm (support part), 23, 23A ... Light source, 24, 24A, 24B ... Horizontal transfer part, A5, A8 ... Arm (horizontal transfer part), 30 ... Rotation holding part, 34 ... Lifting pin (support part), U2, U7, U8, U9, U10: heating / cooling unit (substrate heat treatment apparatus), W: wafer (substrate), Wb: back surface.

Claims (14)

A hot plate that supports and heats a horizontally disposed substrate;
A light irradiation unit for irradiating the substrate with light for promoting a reaction that proceeds by heating with the hot plate;
A horizontal transfer unit that moves the light irradiation position across the entire processing target portion of the substrate by transferring the light source of the light irradiation unit or the substrate in a horizontal direction;
A substrate heat treatment apparatus comprising: a control unit that controls the light irradiation unit and the horizontal transfer unit to adjust the amount of light irradiation for each irradiation position. The light irradiation unit has a plurality of the light sources arranged linearly along the radial direction of the substrate,
The horizontal transfer unit is configured to transfer the light source or the substrate in a direction orthogonal to the direction in which the light sources are arranged.
The substrate heat treatment apparatus according to claim 1, wherein the control unit controls the light irradiation unit so as to adjust an emitted light amount for each of the light sources. A rotation holding unit for holding and rotating the substrate;
The substrate heat treatment apparatus according to claim 1, wherein the horizontal transfer unit transfers the light source or the substrate in a horizontal direction when the rotation holding unit rotates the substrate. The hot plate heats the substrate to advance a reaction initiated by a photosensitive reaction;
The substrate heat treatment apparatus according to claim 1, wherein the light irradiation unit irradiates light for promoting the photosensitive reaction before heating by the hot plate.   The said light irradiation part is a substrate heat processing apparatus as described in any one of Claims 1-3 which irradiates the light for radiation heating. A support unit that supports the substrate; and a lifting unit that lifts and lowers the support unit.
The horizontal transfer unit is configured to transfer the light source or the substrate in a state where the light source is positioned below the substrate raised by the support unit and the lifting unit,
The substrate heat treatment apparatus according to claim 5, wherein the light irradiation unit is configured to irradiate the back surface of the substrate with the light. A cooling plate that supports and cools the substrate, and further carries the substrate onto the hot plate and unloads the substrate from the hot plate;
The horizontal transfer unit is a cooling plate transfer unit that transfers the cooling plate in a horizontal direction for transferring the substrate,
The substrate heat treatment apparatus according to claim 6, wherein the light source is fixed to the cooling plate or a peripheral portion of the cooling plate. A heating process in which the substrate is horizontally arranged on the hot plate and heated;
While irradiating the substrate with light for promoting the reaction that proceeds by heating with the hot plate, the light source of the light or the substrate is transferred in the horizontal direction, so that the entire area to be processed of the substrate is covered. A light irradiation step of moving the irradiation position of the light,
In the light irradiation step, a substrate heat treatment method of adjusting an irradiation light amount of the light for each irradiation position.   9. The substrate according to claim 8, wherein in the light irradiation step, the light source or the substrate is transferred in a direction orthogonal to a direction in which the light sources are arranged, using a plurality of the light sources arranged linearly along a radial direction of the substrate. Heat treatment method.   The substrate heat treatment method according to claim 8, wherein in the light irradiation step, the light source or the substrate is transferred in a horizontal direction while rotating the substrate. Performing the light irradiation step before the heating step,
In the heating step, the substrate is heated so as to advance a reaction initiated by a photosensitive reaction,
The substrate heat treatment method according to any one of claims 8 to 10, wherein in the light irradiation step, light for promoting the photosensitive reaction is irradiated.   The substrate heat treatment method according to claim 8, wherein in the light irradiation step, light for radiation heating is irradiated. Prior to the light irradiation step, further comprising a raising step of raising the substrate,
In the light irradiation step, the light source or the substrate is transferred in a horizontal direction in a state where the light source is positioned below the substrate raised in the rising step, so that the back surface of the substrate is irradiated with the light. The substrate heat treatment method according to claim 12.   14. A computer-readable recording medium for substrate heat treatment in which a program for causing a device for performing heat treatment of a substrate to execute the substrate heat treatment method according to claim 8 is recorded.

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