JP2000058437A - Resist application - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent dispersion of thickness of resist films formed by a resist applying apparatus. SOLUTION: In a method for applying resist, air subjected to temperature and humidity adjustment at a temperature and humidity adjusting apparatus 76 is introduced into a resist applying apparatus 21 through a pipe 91 and is introduced into a resist applying apparatus 23 through a branched pipe 92. The temperature and humidity within the resist applying apparatus 21, detected by a temperature and humidity sensor 80 mounted on a cup 50 in the resist applying apparatus 21, is made to be a reference temperature and humidity and a reference temperature and humidity signal is transmitted to a control device 53. The temperature and humidity within the resist applying apparatus 23 are detected by a temperature and humidity sensor 90 mounted on a cup 82 in the resist applying apparatus 23 and are transmitted to a control device 53. The control device 53 controls the temperature and humidity adjusting apparatus 76, based on the reference temperature and humidity, and resist applying treatment is interrupted when the difference between the reference temperature and humidity and the temperature, and the humidity detected by the temperature and humidity sensor 90 exceeds a predetermined value.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a resist coating method for coating a substrate with a resist solution.

[0002]

2. Description of the Related Art In a photoresist process for manufacturing a semiconductor device, a resist coating process for forming a resist film on a surface of a semiconductor wafer (hereinafter, referred to as "wafer") or the like is performed. In this resist coating process,
A predetermined amount of resist solution is supplied to the wafer vacuum-adsorbed to the spin chuck, the wafer is rotated, and the resist solution is diffused by centrifugal force to form a resist film having a predetermined thickness. Such a resist coating step is performed by, for example, two resist coating apparatuses provided in the coating and developing processing apparatus.

Incidentally, since a resist film is very sensitive to changes in temperature and humidity, it is necessary to adjust each resist coating device to a predetermined temperature and humidity in order to form a resist film having a predetermined thickness. there were. Therefore, conventionally, a gas supplied from a gas supply source is adjusted to a predetermined temperature and humidity by a temperature and humidity adjusting device, and the gas is branched and supplied to each resist coating device. When the same gas is supplied to each resist coating device, the temperature and humidity of each resist coating device are assumed to be the same, and the temperature and humidity sensor attached to one resist coating device is used. Controls the temperature and humidity controller based on the temperature and humidity detected by the device.

[0004]

However, heat treatment devices such as a heat treatment device and a cooling treatment device are arranged in the vicinity of each resist coating device, and the influence of heat generated from these heat treatment devices is affected by each resist coating device. In some cases. Therefore, even if the same gas is supplied to each resist coating device as described above, the temperature and humidity in each resist coating device may be different. In this case, if the temperature / humidity adjusting device is controlled in the above procedure, the temperature / humidity in another resist coating device will not be adjusted to the predetermined temperature / humidity, and there is a possibility that the resist film cannot be formed with the predetermined film thickness.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and when resist is applied by using a plurality of resist coating apparatuses, the resist film applied by each resist coating apparatus is prevented from being varied. The purpose is to provide a resist coating method.

[0006]

According to one aspect of the present invention, there is provided a resist coating apparatus for supplying a resist solution to a substrate to form a resist film.
A gas supply device for supplying gas to the plurality of resist coating devices, a temperature and humidity adjustment device for adjusting the temperature and humidity of the gas from the gas supply device, and a temperature and humidity for detecting the temperature and humidity in each resist coating device A method of controlling a temperature and humidity adjusting device based on the temperature and humidity detected by the temperature and humidity detecting device, and supplying a gas adjusted to a predetermined temperature and humidity into each resist coating device using the detecting means to apply a resist. Wherein one of the temperature / humidity detecting means is regarded as a reference temperature / humidity detecting means, and the temperature / humidity adjusting device is controlled based only on the reference temperature / humidity detected by the reference temperature / humidity detecting means. If the difference between the temperature and humidity detected by the other temperature and humidity detecting means and the reference temperature and humidity exceeds a predetermined value, at least the resist in the resist coating device detected by the other temperature and humidity detecting means is used. Characterized in that to stop the coating, the resist coating method is provided.

According to the first aspect of the present invention, in order to control the temperature / humidity adjusting device based on the reference temperature / humidity, the temperature / humidity of one resist coating device is maintained at a predetermined temperature / humidity. . Therefore, one resist coating apparatus can form a resist film with a predetermined thickness. And
If the difference between the reference temperature and humidity and the temperature and humidity detected by the other temperature and humidity detecting means is within a predetermined value, the resist film can be formed with a thickness within a range that does not hinder other resist coating apparatuses. . When the temperature and humidity detected by the other temperature and humidity detecting means deviate from the reference temperature and humidity by a predetermined value or more, at least the other resist coating device is stopped, so that a substrate having a poor resist film thickness is produced. Nothing.

According to a second aspect of the present invention, there are provided a plurality of resist coating apparatuses for supplying a resist liquid to a substrate to form a resist film, a gas supply apparatus for supplying gas to the plurality of resist coating apparatuses, A temperature / humidity adjusting device for adjusting the temperature / humidity of the gas from the gas supply device, and a temperature / humidity detecting means for detecting the temperature / humidity in each resist coating device, and based on the temperature / humidity detected by the temperature / humidity detecting means. A method of controlling a temperature and humidity adjusting device to supply a gas adjusted to a predetermined temperature and humidity into each resist coating device and applying a resist, wherein one of the temperature and humidity detecting devices is one of the temperature and humidity detecting devices. Is regarded as the reference temperature / humidity detecting means, and the temperature / humidity adjusting device is controlled based only on the reference temperature / humidity detected by the reference temperature / humidity detecting means. When the difference from the reference temperature and humidity exceeds a predetermined value, the resist coating apparatus provided with the other temperature and humidity detecting means controls the temperature of the resist solution to be supplied. A method is provided.

According to a second aspect of the present invention, in order to control the temperature and humidity of the resist coating device based on the reference temperature and humidity, the temperature and humidity of one resist coating device are maintained at a predetermined temperature and humidity. Is done. Therefore, a single resist coating apparatus can form a resist film having a predetermined thickness. When the difference between the reference temperature and humidity and the temperature and humidity detected by the other temperature and humidity detecting means is within a predetermined value, the resist film may not be disturbed by the other resist coating apparatus. It can be formed with a film thickness of If the temperature and humidity detected by the other temperature and humidity detecting means deviate from the reference temperature and humidity by a predetermined value or more, the temperature of the resist solution supplied to the substrate is adjusted. Therefore, the thickness of the resist film can be controlled from the viewpoint of the resist liquid, and a resist film having a predetermined thickness can be formed by another resist coating apparatus. Further, in order not to stop other resist coating devices, the number of substrates to be processed is increased as compared with the first embodiment.

According to a third aspect of the present invention, a plurality of resist coating apparatuses for supplying a resist solution to a substrate and rotating the substrate to form a resist film on the substrate are provided. A gas supply device for supplying a gas, a temperature / humidity adjusting device for adjusting the temperature / humidity of the gas from the gas supply device, and a temperature / humidity detecting means for detecting the temperature / humidity in each resist coating device; A method of controlling a temperature and humidity adjusting device based on the temperature and humidity detected by the detecting means, and supplying a gas adjusted to a predetermined temperature and humidity into each resist coating device to coat the resist. One of the temperature / humidity detecting means is regarded as the reference temperature / humidity detecting means, and the temperature / humidity adjusting device is controlled based only on the reference temperature / humidity detected by the reference temperature / humidity detecting means. If the difference between the temperature and humidity detected by the above and the reference temperature and humidity exceeds a predetermined value, it is necessary to control the rotation speed of the substrate in a resist coating apparatus provided with the other temperature and humidity detecting means. A resist coating method is provided.

According to the third aspect of the present invention, since the temperature and humidity of one resist coating apparatus are maintained at a predetermined temperature and humidity, the resist coating apparatus has a predetermined thickness in one resist coating apparatus. Can be formed. When the temperature and the humidity of the other resist coating device are within a predetermined value from the temperature and the humidity of one resist coating device, a coating process having a film thickness within a range that does not hinder another resist coating device can be performed. If the temperature and humidity of another resist coating device deviate from the temperature and humidity of one resist coating device by a predetermined value or more, the thickness of the resist film is controlled by controlling the rotation speed of the substrate in the other resist coating device. Control. Therefore, it is possible to form a resist film having a predetermined film thickness even if the temperature and humidity in another resist coating device are not adjusted to a suitable temperature and humidity. Also, as in the case of the second aspect, the number of substrates to be processed is increased as compared with the first aspect, since the other resist coating apparatus does not stop.

Further, in the resist coating method according to the first, second or third aspect, when controlling the temperature / humidity adjusting device based on the temperature / humidity from the reference temperature / humidity detecting means, a wireless signal The control signal may be transmitted by the control signal. According to the resist coating method of the fourth aspect, it is not necessary to manually adjust the temperature / humidity adjusting device, and the remote control of the temperature / humidity adjusting device can be performed without being restricted by the layout of the device and the device. .

The term "predetermined value" used in each of the claims means a maximum value of the temperature and the humidity falling within an allowable thickness difference.

[0014]

Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 to 3 show an overview of a coating and developing apparatus incorporating a resist coating apparatus for performing a resist coating method according to the present embodiment. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. It shows the state as seen from.

As shown in FIG. 1, the coating and developing apparatus 1 carries, for example, 25 wafers W into and out of the coating and developing apparatus 1 in cassette units,
A cassette station 2 for loading / unloading wafers W from / to a processing station, a processing station 3 in which various processing apparatuses for performing predetermined processing in a single-wafer manner in a coating and developing processing step are arranged in multiple stages, and the processing station An interface unit 4 for transferring a wafer W to and from an exposure apparatus (not shown) provided adjacent to the apparatus 3 is integrally connected.

In the cassette station 2, for example, each of four cassettes C is positioned at the position of the positioning projection 10 a on the cassette mounting table 10 serving as a mounting portion in the X direction with the entrance of the wafer W toward the processing station 3 (see FIG. 1). It can be placed in a line in the vertical direction. The wafer carrier 15 movable in the cassette arrangement direction (X direction) and the wafer arrangement direction of the wafers W accommodated in the cassette C (Z direction; vertical direction) is movable along the transfer path 15a. Each cassette C can be selectively accessed.

The wafer carrier 15 is also rotatable in the θ direction. As will be described later, the alignment unit 32 and the extension unit 3 belonging to the multi-stage unit of the third processing unit group G ₃ on the processing station 3 side will be described later.
3 can be accessed.

In the processing station 3, a main transfer device 20 is disposed at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 20 to constitute a processing device group. In the coating and developing processing apparatus 1, five processing apparatus groups G ₁ ,
G ₂ , G ₃ , G ₄ , G ₅ can be arranged, and the first and second processing unit groups G ₁ , G ₂ are arranged on the front side of the coating and developing processing unit 1, and the third processing unit device group G ₃ is disposed adjacent to the cassette station 2, the fourth processing unit group G ₄ are disposed adjacent to the interface section 4, the fifth processing unit group G ₅ shown by a broken line Is arranged on the back side.

[0019] 2 In the first processing unit group G ₁ as shown in FIG. 2, two spinner-type processing apparatus, for example, a resist coating unit 21 to be described later, in order a developing unit 22 from the bottom
Stacked in columns. Similarly, in the second processing unit group G _2, 2 units of spinner type processing apparatus, for example, a resist coating unit 23 and the developing unit 24, similarly to the first processing unit group G _1, 2-stage from the bottom in order Are stacked.

[0020] In the third processing unit group G ₃ as shown in FIG. 3, the oven-type processing apparatus for performing a predetermined process by placing the mounting table the wafer W, a cooling processing unit 3 for performing, for example, cooling process
0, a hydrophobizing device 31 for improving the fixability between the resist and the wafer W, an alignment device 32 for aligning the wafer W, an extension device 33 for holding the wafer W on standby, and a pre-baking for performing a heating process before the exposure process The devices 34, 34 and the post-baking devices 35, 35 for performing the heat treatment after the development are stacked in, for example, eight stages from the bottom.

[0021] In the fourth processing unit group G _4, for example, cooling processing unit 30, an extension cooling unit 36 to cool the the wafer W, the extension unit 33, a cooling processing unit 30, the pre-baking unit 34, the post-baking unit 35 , 35, etc. are stacked in, for example, eight stages from the bottom.

A wafer carrier 37 is provided at the center of the interface section 4. This wafer carrier 37 is X
And the fourth processing unit group G are configured to be able to freely move in the Z direction and the Z direction (vertical direction) and rotate in the θ direction.
_The extension unit 33 belonging to ₄ and a wafer transfer table (not shown) on the side of an exposure apparatus (not shown) can be accessed.

The coating and developing apparatus 1 is configured as described above. Next, the resist coating apparatuses 21 and 23 incorporated in the coating and developing apparatus 1 will be described. Since the resist coating device 21 and the resist coating device 23 have the same configuration, the configuration of the resist coating device 21 will be described below.

As shown in FIG. 4, the resist coating apparatus 21 includes a cup 50 for accommodating the wafer W, and a spin chuck 51 for vacuum-sucking the wafer W in the cup 50 and rotating by a motor 52.

A nozzle holder 55 is provided above the cup 50. The nozzle holder 55 has a resist solution supply nozzle 56 for supplying a resist solution to the wafer W and a solvent for the resist solution (hereinafter referred to as "solvent"). .) Are provided respectively.

A resist liquid is supplied to the resist liquid supply nozzle 56 from a resist liquid tank 58 provided outside through a resist liquid supply tube 59. A filter 60 is interposed in the resist solution supply tube 59 on the way to remove impurities in the resist solution. The supply of the resist solution is performed by a bellows pump 61, and a certain amount of the resist solution is discharged from the resist solution supply nozzle 56 to the wafer W.

The nozzle holder 55 is provided with a forward path 62a and a return path 62b formed of tubes through which a temperature control fluid such as water adjusted to a predetermined temperature circulates, and a temperature control fluid supplied from outside through the forward path 62a. Is passed from the outward path 62a to the return path 62b, so that the resist liquid flowing through the resist liquid supply tube 59 is maintained at a constant temperature, and the resist liquid discharged to the wafer W always has a predetermined temperature. . The temperature control of the temperature control fluid is performed by a controller 63 controlled by a controller 53.

On the other hand, the solvent is supplied to the solvent supply nozzle 57 from a solvent tank 64 for storing the solvent through a solvent supply tube 65, and a predetermined amount is supplied by a pump 66 attached to the solvent supply tube 65. Is supplied. Further, in order to maintain the solvent at a predetermined temperature, a forward path 67a and a return path 67b formed of tubes through which the temperature control fluid flows are provided, and the temperature of the temperature control fluid is controlled by a controller controlled by the control device 53. 68 can be adjusted. Therefore, as in the case of the above-described resist solution, the solvent is
Is discharged at a predetermined temperature.

The nozzle holder 55 having the resist solution supply nozzle 56 and the solvent supply nozzle 57 is
9, and the arm 69 is configured to be three-dimensionally movable by the scanning mechanism 70. Therefore, the nozzle holder 55 can move between the standby position and a predetermined position on the wafer W. The resist liquid discharged from the resist liquid supply nozzle 56 and the solvent discharged from the solvent supply nozzle 57 are passed through a drain pipe 71 provided at the bottom of the cup 50 and a drain tank 72 installed below the cup 50. Is discharged to

A chamber 75 is formed in the upper part of the resist coating device 21, and the temperature and humidity of the chamber 75 are adjusted by a temperature and humidity adjusting device 76, and the air purified by a filter 77 is supplied to the chamber 75. It has become. Then, the air supplied to the chamber 75 is discharged from the discharge port of the chamber 75 into the cup 50, and thereafter, the separately provided exhaust port 7 is provided.
8 to be exhausted.

A temperature / humidity sensor 80 is attached to the upper portion of the cup 50 so that the temperature / humidity inside the resist coating device 21 can be detected. The temperature and humidity in the resist coating device 21 detected by the temperature and humidity sensor 80 are transmitted to the control device 53.

The adjuster 8 having the same function and configuration as the resist coating device 21 is provided in the resist coating device 23.
3, a motor 84, a chamber 85, and a temperature / humidity sensor 90 are provided. Then, as shown in FIG. 5, the air whose temperature and humidity has been adjusted by the temperature and humidity adjusting device 76 is supplied to a pipe 91.
Air supplied to the chamber 75 of the resist coating device 21 through
, Respectively. Therefore, air having the same temperature and humidity is introduced into each of the resist coating devices 21 and 23. The temperature and humidity in each of the resist coating devices 21 and 23 are temperature and humidity that do not affect the resist film, for example,
The temperature is set to 3 ° C. and 40%.

The resist coating devices 21 and 23 are configured as described above. Next, resist coating devices 21 and 23
The function and effect of the resist coating method using the method will be described.

The wafer W that has been subjected to the hydrophobizing process in the hydrophobizing device 31 is transferred to the cooling device 3 by the main transfer device 20.
0 and is subjected to a cooling process. Cooling device 30
The wafer W that has been subjected to the predetermined cooling process in
Is transported to the resist coating device 21. Thereafter, the wafer W rotates while being vacuum-sucked on the spin chuck 51 in the resist coating device 21.

Next, a predetermined amount of solvent adjusted to a predetermined temperature is supplied from the solvent supply nozzle 57 to the rotating wafer W to diffuse the solvent on the wafer W. Is applied to the rotating wafer W to form a resist film having a predetermined thickness on the wafer W. In the resist coating device 23, a resist film is formed in the same procedure as in the resist coating device 21.

Here, in order to form a resist film having a predetermined thickness in each of the resist coating devices 21 and 23, the temperature and humidity of each resist coating device must be adjusted equally. , A heating system processing apparatus such as a post-baking apparatus 35 having a high processing temperature and a cooling system processing apparatus such as a cooling processing apparatus 30 having a low processing temperature are disposed.
Even if the same air is branched and supplied, the temperature and humidity in each of the resist coating units 21 and 23 may change due to the heat generated from the heating system processing unit and the cooling system processing unit. Occurs.

In the resist coating method according to the present embodiment, first, the temperature and humidity in the resist coating device 21 detected by the temperature and humidity sensor 80 are set as a reference temperature and humidity, and the temperature and humidity adjusting device 76 is determined based on the reference temperature and humidity. Control. The resist coating device 2 detected by the temperature and humidity sensor 80
1 and the temperature and humidity in the resist coating device 23 detected by the temperature and humidity sensor 90 are output to the control device 53 at regular intervals.

Next, the control device 53 calculates the difference between the reference temperature and humidity and the temperature and humidity detected by the temperature and humidity sensor 90 based on the input temperature and humidity. If the difference is smaller than the predetermined values, for example, the temperature is set at 23 ° C. and the humidity is set at 40%, the resist coating process in each of the resist coating devices 21 and 23 is continued. However, when the difference is larger than the predetermined value, each of the resist coating devices 21 and 23 is stopped to stop the resist coating process.

As described above, in the resist coating method according to the present embodiment, in order to control the temperature / humidity adjusting device 76 based on the reference temperature / humidity detected by the temperature / humidity sensor 80, the temperature / humidity in the resist coating device 21 is controlled. Can be adjusted to a predetermined temperature and humidity. Therefore, the resist film formed in the resist coating device 21 can be formed with a predetermined thickness.

On the other hand, regarding the resist coating device 23, the reference temperature and humidity, ie, the temperature and humidity of the resist coating device 21, and the resist coating device 23 detected by the temperature and humidity sensor 90 are used.
If the difference from the temperature and humidity does not exceed the predetermined value, the process is continued as it is regarded as an allowable range. Accordingly, the resist coating device 23 does not form a wafer W having a poor film thickness, and there is no possibility that the yield will be reduced.

When the difference between the reference temperature and humidity and the temperature and humidity detected by the temperature and humidity sensor 90 exceeds a predetermined value,
In order to stop the resist coating devices 21 and 23, the inside of the resist coating device 2 is not adjusted to a suitable temperature and humidity.
In step 3, no resist coating treatment is performed. Therefore, the resist coating device 23, that is, the resist coating device 23 that is performing the process in the temperature and humidity atmosphere exceeding the allowable range is stopped. As a result, it is possible to prevent the formation of a wafer W having a poor film thickness, prevent a process in which the film thickness exceeds a predetermined allowable value, and prevent a decrease in yield.

Further, in the resist coating method according to the present embodiment, the controller 53 transmits a control signal by a radio signal to adjust the temperature / humidity adjusting device 73. Even if the distance is large, no artificial adjustment to the temperature / humidity adjusting device 73 is required, and remote control is possible without being restricted by the layout of the devices and devices. Also, as before,
There is no need for the operator to adjust the temperature / humidity adjusting device 73 at regular intervals.

Thus, the wafer W after the application of the resist solution and the supply of the solvent of the resist solution in the resist coating devices 21 and 23 are completed, is then transferred to a pre-baking device 34 which is the next processing device.

In the above embodiment, when the difference between the reference temperature and humidity and the temperature and humidity detected by the temperature and humidity sensor 90 exceeds a predetermined value, the resist coating devices 21 and 23 are stopped to perform the resist coating. Although an example in which the resist coating is stopped has been described, only the resist coating device 23 may be stopped.
If the difference between the reference temperature and humidity and the temperature and humidity detected by the temperature and humidity sensor 90 exceeds a predetermined value, the temperature of the resist solution is controlled by the adjuster 83 provided in the resist coating device 23. You may.

That is, when the difference between the reference temperature and humidity calculated by the control device 53 and the temperature and humidity detected by the temperature and humidity sensor 90 exceeds a predetermined value, the control device 53 sends the resist coating device 23
And outputs a control signal to the adjuster 83 provided in the controller.
Then, the temperature of the resist solution is controlled by adjusting the temperature of the temperature control fluid with the adjuster 83.

According to this method, the resist coating device 2
Even if the temperature and humidity in the resist coating device 3 deviate from the preferable temperature and humidity in the resist coating device 21, the resist film formed in the resist coating device 23 is changed to a predetermined temperature by changing the temperature of the resist solution supplied to the wafer W. It is possible to form with the film thickness of. Since the resist coating devices 21 and 23 do not need to be stopped unlike the above embodiment, it is possible to improve the number of processed wafers.

Further, instead of controlling the temperature of the resist solution, the number of rotations of the motor 84 provided in the resist coating device 23 may be controlled.

According to this method, the resist coating device 2
By controlling the rotation speed of the wafer W in Step 3, the thickness of the resist can be adjusted. Accordingly, even if the temperature and humidity detected by the temperature and humidity sensor 90 of the resist coating device 23 deviate from the reference temperature and humidity by a predetermined value or more, the predetermined film thickness in the resist coating device 23 is changed by changing the rotation speed of the wafer W. Can be formed. In addition, since there is no need to stop each of the resist coating devices 21 and 23, it is possible to improve the wafer processing capability.

In the above-described embodiment, an example has been described in which the resist coating is performed using two resist coating apparatuses 21 and 23. However, the present invention is not limited to this example. The present invention is also applicable to a case where resist is applied using a resist coating apparatus.

Although the temperature and humidity in the resist coating device 21 detected by the temperature and humidity sensor 80 are set as the reference temperature and humidity, the temperature and humidity in the resist coating device 23 detected by the temperature and humidity sensor 90 are replaced with the reference temperature and humidity. It may be humidity. The substrate usable in the present invention is the same as that of the above-described embodiment.
However, the present invention is not limited to this, and may be, for example, an LCD substrate or a CD substrate.

[0051]

According to the first aspect of the present invention, when a resist coating process is performed using a plurality of resist coating devices, even if the temperature and humidity in the devices vary, they are within an allowable range. If there is, the processing is continued as it is, and if it exceeds the allowable range, at least the processing in the device exceeding the allowable range is stopped. Accordingly, it is possible to prevent the thickness of the resist film applied by each resist coating device from varying, and to prevent the occurrence of a substrate having a defective film thickness.

According to the second and third aspects of the present invention, when a resist coating process is performed using a plurality of resist coating devices,
Even if the temperature and humidity in the equipment vary, if the temperature is within the allowable range, the process is continued, and even if the temperature exceeds the allowable range, the temperature of the resist solution in the equipment that exceeds the allowable range The thickness can be controlled to a predetermined value by adjusting the thickness (claim 2) or adjusting the rotation speed of the substrate (claim 3). Therefore, it is possible to prevent the thickness of the resist film applied by each resist coating device from varying. Further, even if there is an apparatus exceeding the allowable range, the apparatus is not stopped, so that the processing capability of the substrate is improved as compared with the first aspect.

[Brief description of the drawings]

FIG. 1 is a plan view of a coating and developing apparatus provided with a resist coating apparatus for performing a resist coating method according to an embodiment.

FIG. 2 is a front view of the coating and developing apparatus of FIG. 1;

FIG. 3 is a rear view of the coating and developing apparatus of FIG. 1;

FIG. 4 is an explanatory diagram of a resist coating apparatus for performing the resist coating method according to the embodiment;

FIG. 5 is an explanatory diagram showing a configuration of each resist coating device in the coating and developing processing device of FIG. 1;

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 coating / developing apparatus 21, 23 resist coating apparatus 50 cup 51 spin chuck 52, 84 motor 53 controller 75, 85 chamber 76 temperature / humidity controller 80, 90 temperature / humidity sensor W wafer C cassette

Continued on the front page (72) Inventor Masami Atsumoto 2655 Tsukure, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Tokyo Electron Kyushu Corporation Kumamoto Office F-term (reference) 2H025 AB16 EA05 4D075 AC64 AC92 AC99 DC22 4F041 AA06 AB01 BA00 5F046 HA02 JA02 JA03 JA07 JA22 JA24 JA27 KA01 KA07 LA18

Claims (4)

[Claims] A plurality of resist coating devices for supplying a resist solution to a substrate to form a resist film; a gas supply device for supplying a gas to the plurality of resist coating devices; and a gas supply device. A temperature / humidity adjusting device for adjusting the temperature / humidity of the gas, and temperature / humidity detecting means for detecting the temperature / humidity in each resist coating device, and a temperature / humidity adjusting device based on the temperature / humidity detected by the temperature / humidity detecting means. And applying a gas adjusted to a predetermined temperature and humidity into each resist coating device to apply the resist, wherein one of the temperature and humidity detecting means detects the reference temperature and humidity. Means for controlling the temperature and humidity controller based only on the reference temperature and humidity detected by the reference temperature and humidity detection means, and calculating the difference between the temperature and humidity detected by the other temperature and humidity detection means and the reference temperature and humidity. A resist coating method characterized in that when the temperature exceeds a predetermined value, the resist coating by a resist coating device detected by at least another temperature and humidity detecting means is stopped. A plurality of resist coating devices for supplying a resist solution to the substrate to form a resist film; a gas supply device for supplying a gas to the plurality of resist coating devices; and a gas supply device. A temperature / humidity adjusting device for adjusting the temperature / humidity of the gas, and temperature / humidity detecting means for detecting the temperature / humidity in each resist coating device, and a temperature / humidity adjusting device based on the temperature / humidity detected by the temperature / humidity detecting means. And applying a gas adjusted to a predetermined temperature and humidity into each resist coating device to apply the resist, wherein one of the temperature and humidity detecting means detects the reference temperature and humidity. Means for controlling the temperature / humidity controller based only on the reference temperature / humidity detected by the reference temperature / humidity detector, and calculating the difference between the temperature / humidity detected by the other temperature / humidity controller and the reference temperature / humidity. When the temperature exceeds a predetermined value, the temperature of the resist solution to be supplied is controlled in a resist coating device provided with the other temperature and humidity detecting means. 3. A plurality of resist coating devices for supplying a resist liquid to a substrate and rotating the substrate to form a resist film on the substrate, and a gas for supplying a gas to the plurality of resist coating devices. A supply device, a temperature / humidity adjusting device for adjusting the temperature / humidity of the gas from the gas supply device, and a temperature / humidity detecting device for detecting the temperature / humidity in each resist coating device. A method of controlling a temperature / humidity adjusting device based on temperature / humidity and supplying a gas adjusted to a predetermined temperature / humidity into each resist coating device to apply a resist. The temperature / humidity detecting means is regarded as the reference temperature / humidity detecting means, and the temperature / humidity adjusting device is controlled based only on the reference temperature / humidity detected by the reference temperature / humidity detecting means. When the difference between the temperature and humidity and the reference temperature and humidity exceeds a predetermined value, the rotation speed of the substrate is controlled in a resist coating apparatus provided with the other temperature and humidity detection means. , Resist coating method. 4. A control signal is transmitted by a wireless signal when controlling the temperature and humidity adjusting device based on the temperature and humidity from the reference temperature and humidity detecting means. Resist coating method.