JP3718633B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus that performs, for example, a resist solution coating process or a developing process on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display.
[0002]
[Prior art]
In the photolithography technique in the manufacturing process of a semiconductor device, a resist is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer), the applied resist is exposed to a predetermined pattern, and further developed to obtain a predetermined pattern. A resist film is formed. Such a series of processes is performed by a system in which an exposure apparatus is connected to a coating / developing apparatus.
[0003]
FIG. 10 is a plan view showing a conventional example of such an apparatus. A cassette C containing 25 substrates, for example, semiconductor wafers W, is carried into the cassette stage 1 of the cassette station A1. A processing station A2 is connected to the cassette station A1, and an exposure apparatus (not shown) is connected to the processing station A2 via an interface station A3.
[0004]
The wafer W in the cassette C on the cassette stage 1 is taken out by the delivery arm 11 and sent to the coating unit 13 through the delivery unit of the shelf unit 12 where the resist is applied. Thereafter, the wafer W is transported and exposed through the path of the wafer transport means 14 → the transfer unit of the shelf unit 15 → interface station A3 → exposure apparatus. The wafer W after exposure is transferred to the processing station A2 through the reverse path, developed by a developing unit (not shown) provided at the lower stage of the coating unit 13, and then transferred from the wafer transfer means 14 to the shelf unit 12. → It is conveyed by the path of cassette C.
[0005]
Each shelf of the shelf units 12 and 15 is configured as a heating unit, a cooling unit, a transfer unit for the wafer W, a hydrophobization processing unit, and the like. In order to perform resist coating and the like at this temperature, the shelf units 12 and 15 perform heat treatment and cooling treatment in this order. Reference numeral 16 denotes a transfer arm for transferring the wafer W between the processing station A2 and the exposure apparatus.
[0006]
The processing station A2 is divided into a processing area composed of the coating unit 13 and the developing unit, and a transfer area in which the wafer transfer means 14 is disposed. Air adjusted to temperature and humidity is sent out, so to speak, it is a highly accurate adjustment atmosphere.
[0007]
[Problems to be solved by the invention]
Incidentally, the inventor of the present invention greatly depends on the processing temperature, as shown in the temperature dependency of the resist film thickness in FIG. 12 and the temperature dependency of the development line width in FIG. It was found that the resist film thickness and development line width change considerably when the processing temperature differs by 2 ° C.
[0008]
Here, in the above-described coating / developing apparatus, for example, after a predetermined process is performed in the hydrophobic processing section of the shelf units 12 and 15, the resist is applied in the coating unit 13 after being cooled to a predetermined temperature in the cooling section. At this time, the wafer W is transferred from the cooling unit to the coating unit 13 through a transfer area where temperature and humidity are not adjusted. For this reason, even if the temperature of the wafer W is adjusted in the cooling unit, the temperature of the wafer W is affected by the temperature of the transfer region during the subsequent transfer, and eventually the temperature of the wafer W at the time of resist coating is different from that planned. As a result, the film thickness of the resist may change, and the film thickness uniformity may deteriorate.
[0009]
In order to prevent this, it is conceivable that the entire processing station A2 has a highly accurate adjustment atmosphere for adjusting the temperature and humidity. However, if the area for adjusting the atmosphere is widened in this way, the cost is increased. There's a problem.
[0010]
The present invention has been made under such circumstances, and an object of the present invention is to improve the uniformity of the process by performing the coating process of the coating liquid while adjusting the temperature and humidity of the substrate with high accuracy. An object of the present invention is to provide a substrate processing apparatus that can perform the above processing.
[0011]
[Means for Solving the Problems]
others Book The substrate processing method of the invention is a substrate processing method in which a substrate cooled by a cooling plate is conveyed to a coating processing unit, and a processing liquid is applied to the substrate in the coating processing unit.
Detects the temperature of the area where the board is transported, and this detected value And the substrate temperature change width during transfer determined based on the substrate transfer time from the cooling plate to the coating processing section Based on the above, the temperature of the substrate cooled by the cooling plate is adjusted so that the temperature of the substrate conveyed to the coating processing unit becomes the same as the temperature at the time of applying the processing liquid.
[0012]
Specifically, such a substrate processing method includes a placement unit for placing a substrate cassette containing a plurality of substrates, and a delivery for delivering the substrate to the substrate cassette placed on the placement unit. Means for processing the substrate connected to the cassette station and transported by the transfer means, the processing station being configured to process the substrate. A cooling plate for cooling;
An application processing unit for applying a processing liquid to the substrate;
Substrate transport means for transporting the substrate cooled by the cooling plate to the coating processing section;
A temperature detection unit for detecting the temperature of the region in which the substrate is transported by the substrate transport means;
The detection value of the temperature detection unit so that the temperature of the substrate conveyed to the coating processing unit becomes the coating temperature of the processing liquid. And the substrate temperature change width during transfer determined based on the substrate transfer time from the cooling plate to the coating processing section And a control unit for adjusting the temperature of the cooling plate, according to the present invention.
[0013]
In such a configuration, the temperature of the region where the substrate is transported is detected, and this detected value, Change width of substrate temperature during transfer determined based on substrate transfer time from cooling plate to coating processing section The temperature of the substrate cooled by the cooling plate is adjusted so that the temperature of the substrate transferred to the coating processing unit becomes the coating temperature of the processing liquid, so that the temperature of the substrate is controlled with high accuracy. In this state, the coating process can be performed, the occurrence of process unevenness due to temperature change can be prevented, and the uniformity of the coating process can be improved.
[0014]
Moreover, the substrate processing method of the present invention provides a substrate cooled by a cooling plate. By substrate transfer means In the substrate processing method of transporting to the coating processing unit and applying the processing liquid to the substrate in the coating processing unit,
By a gas supply unit provided in the substrate transfer means, The substrate is transported from the cooling plate to the coating processing unit while supplying a temperature-adjusted gas to the processing surface of the substrate.
[0015]
Such a substrate processing method includes a placement portion for placing a substrate cassette containing a plurality of substrates, and a delivery means for delivering the substrate to the substrate cassette placed on the placement portion. A cassette station and a processing station connected to the cassette station and processing the substrate transported by the delivery means, the processing station being a cooling station for cooling the substrate. Plates,
An application processing unit for applying a processing liquid to the substrate;
Substrate transport means for transporting the substrate between the cooling plate and the coating processing section;
Provided in the substrate transport means; A gas supply unit configured to supply a temperature-adjusted gas to a surface to be processed of the substrate while the substrate is transferred from the cooling plate to the coating processing unit by the substrate transfer unit. Realized in a substrate processing apparatus.
[0016]
In such a configuration, the temperature-adjusted gas is supplied to the surface of the substrate to be processed, and the substrate is transported from the cooling plate to the coating processing unit, so that the temperature change of the substrate during transportation is suppressed. In addition, the coating processing section can be performed in a state where the substrate temperature is maintained with high accuracy, and the uniformity of the coating processing can be improved. Here, the gas supplied from the gas supply unit to the surface to be processed of the substrate is preferably temperature-adjusted to the processing temperature in the coating processing unit, and in this case, the temperature change of the substrate during the transfer can be further suppressed. In addition, the uniformity of the coating process can be further improved.
[0017]
The present invention specifically includes: Processing station cassette station And an interface station for transferring the substrate between the processing station and the exposure apparatus, and the coating processing unit performs a resist solution coating process on the substrate. It is a structure that is to do, Processing station cassette station And an interface station for transferring the substrate between the processing station and the exposure apparatus, and the coating processing unit is disposed on the substrate exposed by the exposure apparatus. On the other hand, the developing process is performed.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments in which the present invention is applied to a substrate coating and developing apparatus will be described below. FIG. 1 is a schematic plan view of this embodiment, FIG. 2 is a schematic view showing the inside through, S1 is a cassette station, and S2 is a resist coating process and development process for a wafer W. A processing station for performing the above, S3 is an interface station, and S4 is an exposure apparatus.
[0019]
The cassette station S1 is a cassette stage that constitutes a placement portion on which a wafer cassette (hereinafter referred to as a “cassette”) 22 that constitutes, for example, four substrate cassettes containing a plurality of substrates, eg, 25 wafers W, is placed. 21 and a transfer arm 23 serving as a transfer means for transferring the wafer W between the cassette 22 on the cassette stage 21 and the processing station S2. The delivery arm is configured to be movable up and down, movable in the X and Y directions, and rotatable about the vertical axis.
[0020]
The processing station S2 includes, for example, two coating units C (C1, C2), for example, two developing units D (D1, D2), and, for example, three shelf units R (R1, R2, R3). For example, one substrate transfer means MA, for example, three temperature / humidity detection units 3 (3A, 3B, 3C) for detecting the temperature and humidity of the transfer region described later, the control unit 30, and the temperature A plurality of cooling units 4 in which temperature control is performed by the control unit 30 based on the detected value of the humidity detection unit 3 (3A, 3B, 3C), and the cassette station S1 and the interface station. The wafer W is transferred to and from S3, and within the station S2, the resist solution is applied to the wafer W, the wafer W is developed, and the wafer W is heated to a predetermined temperature before and after these processes. To heat and cool It is configured to perform processing and that.
[0021]
An example of the layout of such a processing station A2 will be described. On the back side of the transfer arm 23, for example, a coating unit C and a developing unit D are provided on the right side when viewed from the cassette station S1, for example. Processing units U are provided in two stages. That is, two coating units C1 and C2 forming two coating processing units are arranged side by side with the coating unit C1 facing forward in a direction substantially perpendicular to the cassette arrangement direction of the cassette stage 21. In the lower stage of C1 and C2, developing units D1 and D2 forming two coating processing units are provided side by side with the developing unit D1 in front. In the following description, the cassette station S1 side is referred to as the front side, and the exposure apparatus S4 side is referred to as the back side.
[0022]
Further, on the left side of the processing unit U as viewed from the cassette station S1, for example, the wafer W can be transferred between the coating unit C, the developing unit D, and the shelf unit R. A substrate transfer means MA configured to be rotatable around a vertical axis is provided. A shelf unit R1 is disposed on the front side of the substrate transport means MA as viewed from the cassette station S1, a shelf unit R2 is disposed on the back side, and a shelf unit R3 is disposed on the left side. However, in FIG. 2, the shelf unit R3 and the substrate transfer means MA are omitted for convenience.
[0023]
Here, an area where the wafer units W are transferred between the shelf unit R and the processing unit U where the shelf units R1 to R3 and the substrate transfer means MA are placed is referred to as a transfer area. In this example, the detection unit 3 is provided in a transfer area between the shelf units R1 to R3 and the substrate transfer means MA so as to detect the temperature of the area.
[0024]
The shelf unit R (R1, R2, R3) includes a heating unit 51 for heating the wafer W and a hydrophobizing unit 52 for hydrophobizing the wafer surface, as representatively shown in FIG. In the shelf unit R1, a wafer W is transferred between the transfer arm 23 of the cassette station S1 and the substrate transfer means MA. In the shelf unit R2, a transfer arm 24 and a substrate transfer means of the interface station S3 described later are used. A transfer unit 53 having a transfer table for transferring the wafer W to and from the MA and an alignment unit 54 for aligning the wafer W in the shelf unit R1 are vertically arranged.
[0025]
For example, as shown in FIG. 4, the cooling unit 4 places the wafer W on the surface of a cooling plate 41 in which a thermo module 40 is built, so that the wafer W is cooled to a predetermined temperature. It has become. The cooling plate 41 is provided with elevating pins 43 that are moved up and down by an elevating mechanism 42 for transferring the wafer W to the plate 41.
[0026]
The cooling plate 41 is accommodated in, for example, a case 44, and a wafer W transfer port 45 is formed at a position corresponding to the arm 71 of the substrate transfer means MA of the case 44. Further, for example, a temperature / humidity detection unit 3A made of, for example, a thermocouple or a side temperature resistor is attached to the surface of the case 45 facing the substrate transfer means MA. The temperature of the conveyance area between the unit 5 is detected.
[0027]
The thermo module 40 of the cooling plate 41 is configured such that a predetermined temperature control is performed by the control unit 30 based on the detection value (the temperature of the conveyance region) of the temperature detection unit 3A. Thus, the temperature of the wafer W is adjusted with high accuracy.
[0028]
Specifically, the thermo module 40 is a semiconductor element capable of transferring heat from the heat absorption side to the heat dissipation side by flowing a direct current, and the amount of heat generated is changed by changing the amount of flowing current. For this reason, if the control unit 30 outputs a control signal to the power supply unit 46 of the thermo module 40 based on the detection value of the temperature / humidity detection unit 3A, thereby allowing a predetermined amount of current to flow, the cooling plate 41 Is controlled to a predetermined temperature.
[0029]
Next, the coating unit C will be described with reference to FIG. 5, for example. Reference numeral 61 denotes a cup, and a rotatable spin chuck 62 having a vacuum suction function is provided in the cup 61. The spin chuck 62 is configured to be movable up and down by an elevating mechanism 63. When the spin chuck 62 is positioned above the cup 61, the wafer W is transferred to and from an arm 71 (to be described later) of the substrate transfer means MA. Is done.
[0030]
As for the delivery of the wafer W, the wafer W on the arm 71 is received from the upper side of the cup 61 while the spin chuck 62 is relatively lifted from the lower side, and vice versa. To arm 71. 64 is a processing liquid discharge nozzle, 65 is a processing liquid supply pipe, and 66 is a support arm that horizontally moves the nozzle. In such a coating unit C, the discharge nozzle 64 is formed on the surface of the wafer W on the spin chuck 62. Then, a resist solution as a processing solution is dropped, and the spin chuck 62 is rotated to spread and apply the resist solution onto the wafer W.
[0031]
The developing unit D has substantially the same configuration as the coating unit C, but the developing unit D is configured such that the discharge nozzle 64 includes a plurality of supply holes arranged in the diameter direction of the wafer W, for example. The developer, which is a processing solution, is discharged from the discharge nozzle 64 onto the surface of the wafer W, and the spin chuck 62 is rotated halfway to deposit the developer on the wafer W, thereby forming a liquid film of the developer. It has become so.
[0032]
Furthermore, these processing units U are closed in space. That is, for example, as shown in FIG. 5, the coating unit C and the like are partitioned from other spaces by the wall portion 67, and between the respective portions such as between the coating unit C <b> 1 and the developing unit D <b> 1 are separated by the partition wall 68. A delivery port 60 is formed at a position corresponding to the arm 71 of the substrate transport means MA in each section such as the coating unit C1 on the wall.
[0033]
Impurities are removed from each part of the coating processing unit 5 partitioned by the wall 67 and the partition wall 68, and air adjusted to a predetermined temperature, for example, 23 ° C., which is a processing liquid coating temperature, and a predetermined humidity is sent out. As a result, the atmosphere of these regions is adjusted with high accuracy.
[0034]
In other words, for example, the partitioned processing unit U is provided with a filter unit F so as to cover the upper side as shown in FIG. 5, for example, and the atmosphere recovered from the lower side of the processing unit U is exhausted to the factory exhaust system. On the other hand, a part of the air is introduced into the filter device 69, and the air purified by the filter device 69 is blown out as a down flow into each part via the filter unit F.
[0035]
The filter unit F includes, for example, a filter for purifying air, a chemical filter to which an acid component is added to remove alkali components such as an ammonia component and amine in the air, a suction fan, and the like. The filter device 69 includes an impurity removing unit for removing impurities, a heating mechanism and a humidifying mechanism, and a sending unit for sending air. For example, when a chemically amplified resist is used as the resist solution, it is necessary to prevent the alkali component from entering the development processing atmosphere. Therefore, the processing section is closed and an alkali from the outside using a chemical filter is used. Prevents intrusion of ingredients.
[0036]
Chemically amplified resists generate acid upon exposure, and the acid diffuses by heat treatment and acts as a catalyst, decomposing the base resin, which is the main component of the resist material, and changing the molecular structure. Solubilized in the developer. Therefore, when this type of resist is used, when an alkali component such as amine generated from a small amount of ammonia contained in the air or paint on the wall comes into contact with the acid on the resist surface, the catalytic reaction by the acid is suppressed, Since the pattern shape deteriorates, it is necessary to remove the alkali component.
[0037]
For example, as shown in FIG. 6, the substrate transfer means MA includes three arms 71 for holding the wafer W, a base 72 for supporting the arms 71 so as to be movable back and forth, and the base. And a pair of guide rails 73 and 74 that support the elevator 72 so that it can be moved up and down. It is configured to rotate freely.
[0038]
An interface station S3 is connected next to the processing station S2, and a wafer W on which a resist film is formed is exposed on the back side of the interface station S3. An exposure apparatus S4 is connected. The interface station S3 includes a transfer arm 24 for transferring the wafer W between the processing station S2 and the exposure apparatus S4.
[0039]
Next, the operation of the above embodiment will be described. First, a cassette 22 storing, for example, 25 wafers W is loaded into the cassette stage 21 by an automatic transfer robot (or an operator), and the wafer W is taken out from the cassette 22 by the transfer arm 23 and processed. It is placed on the delivery 53 in the shelf unit R1 of the action S2.
[0040]
The wafer W is transferred to the hydrophobic portion 52 of the shelf unit R by the substrate transfer means MA, and after the wafer surface is hydrophobized, the wafer W is transferred to the cooling portion 4 of the shelf unit R by the substrate transfer means MA. It is cooled to the temperature set based on Subsequently, the wafer W is transferred to the coating unit C by the substrate transfer means MA, and a resist solution is applied thereto.
[0041]
Here, the present invention is characterized in that the temperature and humidity of the wafer W are adjusted by the cooling unit 4 based on the temperature and humidity of the transfer region. The temperature adjustment of the wafer W will be described. In this example, the temperature / humidity of the transfer region is detected at a predetermined timing by the temperature / humidity detection unit 3, and the application temperature of the processing liquid in the coating unit C is determined by the control unit 30 based on this detection value as in the above example. In the case of 23 ° C., the temperature of the cooling plate 41 of the cooling unit 4 is controlled so that the temperature of the wafer W when it is transferred to the coating unit C becomes 23 ° C. Thus, the wafer W is brought to a predetermined temperature. Adjusted.
[0042]
That is, when the wafer is transferred after the wafer temperature is adjusted to 23 ° C. in the cooling unit 4 as in the prior art, the transfer takes about 2 to 3 seconds. Since the temperature of the wafer W changes at this time, it is affected by the temperature of the transfer area at this time. For example, when the temperature of the transfer area is higher than 23 ° C., the wafer temperature when transferred to the coating unit C is As shown to (a), it becomes higher than 23 degreeC. Since the temperature of the coating unit C is adjusted, the temperature of the wafer W gradually approaches 23 ° C. as the coating process proceeds.
[0043]
Therefore, in this example, control is performed so that the wafer temperature when being transferred to the coating unit C is 23 ° C. according to the variation range of the wafer temperature during transfer determined based on the temperature of the transfer region and the transfer time. The temperature of the cooling plate 41 of the cooling unit 4 is corrected by the unit 30. For example, as shown in FIG. 7B, when the temperature of the wafer W rises by x ° C. during transfer, the cooling unit 4 adjusts the wafer temperature to 23 ° C. when transferred to the coating unit C. The wafer temperature is adjusted to (23−x) ° C., for example.
[0044]
On the other hand, for example, when the temperature of the transfer region is lower than 23 ° C., the wafer temperature when transferred to the coating unit C is as follows: As shown in FIG. 8A, the temperature is lower than 23 ° C. (Note that as described above, the temperature of the wafer W gradually approaches 23 ° C. as the coating process proceeds). Therefore, in this example, for example, as shown in FIG. 8B, when the temperature of the wafer W drops by x ° C. during the transfer, the wafer is cooled so that the wafer temperature becomes 23 ° C. when transferred to the coating unit C. In part 4, the wafer temperature is adjusted to, for example, (23 + x) ° C.
[0045]
Here, the temperature of the wafer W that changes during the transfer is determined by the temperature of the transfer region and the transfer time. Further, the transfer time is determined by the position of the cooling unit 4 of the shelf unit R, the position of the coating unit C, the transfer speed of the substrate transfer means MA, the transfer timing, and the like. Therefore, a transport time is obtained in advance according to a series of processing programs, and a correction value for the temperature of the cooling plate 41 of the cooling unit 4 is obtained based on the temperature of the transport region and the transport time accordingly, and this correction value is controlled. By storing in the unit 30, the temperature of the cooling plate 41 of the cooling unit 4 is controlled based on the temperature of the transfer region and the transfer time, and the wafer W adjusted to a predetermined temperature here is transferred by the substrate transfer means MA. When transported to the coating unit C, the temperature becomes 23 ° C.
[0046]
In addition, you may adjust the temperature of the cooling plate 41 according to the humidity (relative humidity) detected by the temperature / humidity detection part 3 instead of the temperature of such a conveyance area | region. For example, when the humidity is high, the coating thickness becomes thin, and when the humidity is low, the coating thickness becomes thick. Therefore, when the humidity is lower than the desired value, the temperature is increased so that the coating thickness becomes thin. When the humidity is higher than a desired value, the temperature may be adjusted so as to increase the coating film thickness. Of course, the humidity in the transport area may be controlled to be a desired humidity according to the humidity detected by the temperature / humidity detection unit 3.
[0047]
Thus, the wafer W coated with the resist solution at a predetermined temperature, for example, 23 ° C., is transferred to the heating unit 51 of the shelf unit R by the substrate transfer means MA, heated to the predetermined temperature, and then the shelf unit R by the substrate transfer means MA. Then, the temperature is adjusted by being cooled to a predetermined temperature, and is then transported along the path of the transfer arm 24 of the interface station S3 → the exposure apparatus S4, and exposure is performed. .
[0048]
The wafer W after exposure is in the reverse path, that is, the exposure apparatus S4 → the delivery arm 24 → the heating unit 51 of the shelf unit R → the substrate transport unit MA → the cooling unit 4 of the shelf unit R → the substrate transport unit MA → the development unit D. It is conveyed by the route. Thus, after the wafer W is heated to a predetermined temperature by the heating unit 51, the wafer W is cooled to the predetermined temperature by the cooling unit 4 based on the temperature of the transfer region, and the temperature is adjusted with high accuracy, and then the wafer W is developed. In the unit D, development processing is performed at a predetermined temperature, for example, 23 ° C. which is a coating temperature of the processing liquid. Here, in the cooling unit 4 → developing unit D process, similarly to the above-described cooling unit 4 → coating unit C process, the cooling unit 4 adjusts the temperature of the wafer W based on the temperature of the transfer region.
[0049]
Thereafter, the wafer W is transferred from the substrate transfer means MA → the heating unit 51 of the shelf unit R → the substrate transfer means MA → the cooling unit 4 of the shelf unit R → the substrate transfer means MA → the transfer unit 53 of the shelf unit R → the path of the transfer arm 23. The wafer W that has been transported and heated to a predetermined temperature and then cooled to the predetermined temperature is returned to, for example, the original cassette 22 via the transfer unit 53.
[0050]
Here, in the processing station S2, the wafers W are sequentially sent to the delivery unit 53 of the shelf unit R, and then the vacant hydrophobizing unit 52 → the vacant cooling unit 4 of the shelf unit R → the vacant coating unit. C → vacant heating part 51 of shelf unit R → opening cooling part 4 of shelf unit R → transferred by the path of interface station S3, and the exposed wafer W is interface station. S3 delivery arm 24 → opening heating unit 51 of shelf unit R → opening cooling unit 4 of shelf unit R → empty developing unit D → empty heating unit 51 of shelf unit R → shelf unit It suffices if it is conveyed along the path of the cooling unit 4 where the R is open and the transfer unit 53.
[0051]
Here, in this example, temperature / humidity detectors 3A, 3B, and 3C are provided between the three shelf units R1, R2, and R3 and the substrate transport means M, respectively, between the shelf unit R1 and the processing unit U. When the wafer W is transferred, the temperature control of the cooling plate 41 of the cooling unit 4 of the shelf unit R1 is performed based on the detection value of the temperature / humidity detection unit 3A, and the wafer W is transferred between the shelf unit R2 and the processing unit U. Sometimes the temperature control of the cooling plate 41 of the cooling unit 4 of the shelf unit R2 is performed based on the detection value of the temperature / humidity detection unit 3B, and when transferring the wafer W between the shelf unit R3 and the processing unit U, the temperature / humidity detection unit. Based on the detected value of 3C, temperature control of the cooling plate 41 of the cooling unit 4 of the shelf unit R3 is performed.
[0052]
In the embodiment described above, the temperature of the transfer region is detected, and the cooling plate 41 of the cooling unit 4 is set so that the wafer W reaches a predetermined temperature when the wafer W is transferred to the processing unit U based on the detected value. Since temperature control is performed to adjust the wafer temperature, resist coating and development can be performed at a predetermined temperature, and changes in film thickness and development line width caused by temperature changes can be suppressed. Occurrence can be suppressed and uniform processing can be performed.
[0053]
As described above, in the present embodiment, as long as the temperature and humidity detection unit 3 detects the temperature of the transport region, the number and attachment locations are not limited to the above example, and may be provided in the vicinity of the processing unit U. However, it may be prepared for each cooling unit 4.
[0054]
Further, the layout and number of the processing units U and the cooling units 4 are not limited to the above-described example. For example, the cooling unit 4 that performs temperature control with high accuracy before the processing in the coating unit C and the developing unit D is provided exclusively. C and the developing unit D may be stacked up and down in multiple stages, or a shelf unit R dedicated to the cooling unit 4 that performs temperature control with high accuracy may be provided. Since they are almost the same, there is an advantage that the correction value of the cooling plate 41 temperature can be easily determined.
[0055]
The cooling unit 4 may be configured to cool the wafer W by passing a coolant through the cooling plate 41. In this case, the temperature of the wafer W is controlled with high accuracy by adjusting the flow rate and temperature of the coolant. The Further, a cooling plate 41 and a heating plate (not shown) may be provided in a stacked manner, and the temperature may be adjusted by a combination thereof. Further, the temperature control parameter in the control unit may be only the temperature, and the correction value of the cooling plate 41 temperature may be determined with the conveyance time being constant.
[0056]
Next, another example of the present invention will be described with reference to FIG. In this embodiment, in order to suppress the temperature change during the transfer of the wafer W, the transfer in the transfer region is performed while supplying the gas adjusted to a predetermined atmosphere on the wafer W. Specifically, as shown in FIG. 9, in the substrate transport means MA, for example, the uppermost arm 71 is used only for transport between the cooling plate 41 and the coating unit C or the development unit D. A gas supply unit 8 for supplying a gas adjusted to a predetermined atmosphere to the wafer W supported on the arm 71 is provided above the arm 71.
[0057]
The gas supply unit 8 has, for example, a flat cylindrical shape, and is supported by the support arm 82 so that a circular opening surface 80 having a large number of gas supply holes 81 faces the wafer W on the arm 71. 72 is attached to the back surface (the back surface of the arm 71 in the traveling direction). The opening surface 80 of the gas supply unit 8 is set to a size capable of supplying air to a region larger than the wafer W supported on the arm 71.
[0058]
In such a gas supply unit 8, impurities such as air having a predetermined temperature, for example, a treatment liquid coating temperature of 23 ° C. and a predetermined humidity, such as air, are supplied from the filter device 83 through the gas supply pipe 84. As a result, the air is delivered onto the wafer W held by the arm 71 via the gas supply hole 81. Here, the filter device 83 includes an impurity removing unit for removing impurities, a heating mechanism and a humidifying mechanism, a sending unit for sending air, and the like.
[0059]
In such an embodiment, when the wafer W is transported from the cooling unit 4 to the coating unit C or from the cooling unit 4 to the developing unit D by the substrate transport unit MA, the coating temperature of the processing liquid in the coating processing unit is set on the wafer W. Since the adjusted air is supplied, the wafer W is hardly affected by the temperature of the transfer region. For this reason, since it can be conveyed to the processing unit U in a state where the temperature of the wafer W adjusted to the coating temperature of the processing liquid in the cooling unit 4 is maintained with high accuracy, it is possible to perform coating processing and development processing at a predetermined processing temperature. It is possible to perform uniform processing while suppressing occurrence of processing unevenness caused by temperature change.
[0060]
Here, in this example, as the gas supplied onto the wafer W, in addition to air, an inert gas such as nitrogen can be used. Further, the gas supply unit 8 may be provided separately so as to supply gas onto the wafer W held by the arm 71 instead of being integrally attached to the substrate transfer means MA.
[0061]
Further, a temperature / humidity sensor is installed in the coating unit C to detect the temperature and humidity (relative humidity) in the coating unit C. For example, the gas supply unit 8 arms the gas having the same temperature and humidity as the coating unit C. The wafer W may be supplied onto the wafer W held by the 71. In that case, instead of controlling the humidity, the temperature may be compensated. For example, when the humidity is high, the CD (line width) value decreases, and when the humidity is low, the CD value increases. Therefore, when the humidity is lower than the desired value, the temperature is increased so that the CD value decreases. In addition, when the humidity is higher than a desired value, the temperature may be lowered so that the CD value increases. Of course, it is also possible to control the humidity instead of the opposite, that is, not compensating for the temperature. Such compensation by temperature may be performed by adjusting the temperature of the cooling plate 41.
[0062]
Furthermore, an example in which the wafer W is transferred while supplying a gas adjusted to a predetermined temperature is combined with an example in which the temperature of the cooling unit 4 is controlled based on the temperature in the transfer area. In this case, the temperature of the cooling plate 41 of the cooling unit 4 is controlled in consideration of supplying air at a processing temperature onto the wafer W during transfer.
[0063]
As described above, in the present invention, instead of the hydrophobic treatment, an antireflection film may be formed on the surface of the wafer W before applying the resist. In this case, since the wafer W is cooled to a predetermined temperature before performing the process of forming the antireflection film, for example, a unit for forming the antireflection film is added to the processing unit U, based on the temperature of the transfer region. When the wafer W is transferred to the unit for forming the antireflection film, the temperature control of the cooling unit 4 is performed based on the temperature of the transfer region so that the wafer W reaches a temperature at which the processing is performed.
[0064]
The reason for forming the antireflection film is to prevent the occurrence of reflection on the lower side of the resist during exposure when a chemically amplified resist is used. Furthermore, the present invention is not limited to a wafer as a substrate, and may be a glass substrate for a liquid crystal display.
[0065]
【The invention's effect】
According to the present invention, the coating process can be performed while maintaining the temperature and humidity of the substrate with high accuracy, and the uniformity of the process can be improved.
[Brief description of the drawings]
FIG. 1 is a schematic plan view showing a coating and developing apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic perspective view showing the coating and developing apparatus.
FIG. 3 is a side view showing an example of a shelf unit and a processing unit of the coating and developing apparatus.
FIG. 4 is a cross-sectional view showing an example of a cooling unit of the coating and developing apparatus.
FIG. 5 is a cross-sectional view showing an example of a coating unit of the coating and developing apparatus.
FIG. 6 is a cross-sectional view showing a substrate transfer means.
FIG. 7 is a characteristic diagram for explaining the method of the present invention.
FIG. 8 is a characteristic diagram for explaining the method of the present invention.
FIG. 9 is a cross-sectional view and a perspective view showing a coating and developing apparatus according to another embodiment of the present invention.
FIG. 10 is a schematic plan view showing a conventional coating and developing apparatus.
FIG. 11 is a characteristic diagram showing temperature dependence of film thickness.
FIG. 12 is a characteristic diagram showing the temperature dependence of the development line width.
[Explanation of symbols]
W Semiconductor wafer
S1 cassette station
S2 processing station
S3 interface station
S4 exposure equipment
23 Delivery Arm
3 Temperature / humidity detector
30 Control unit
4 Cooling section
40 Thermo module
41 Cooling plate
8 Gas supply section
C coating unit
D Development unit
R Shelf unit
MA substrate transfer means

Claims (12)

In the substrate processing method of transporting the substrate cooled by the cooling plate to the coating processing unit and applying the processing liquid to the substrate in this coating processing unit,
The temperature of the area where the substrate is transported is detected, and the coating process is performed based on the detected value and the change width of the substrate temperature during the transport, which is determined based on the transport time of the substrate from the cooling plate to the coating processing unit. The substrate processing method characterized by adjusting the temperature of the substrate cooled by the cooling plate so that the temperature of the substrate conveyed to the section becomes the same as the temperature at the time of applying the processing liquid. In the substrate processing method of transporting the substrate cooled by the cooling plate to the coating processing unit and applying the processing liquid to the substrate in this coating processing unit,
The substrate is characterized in that the humidity of the region where the substrate is transported is detected, and the temperature of the substrate cooled by the cooling plate is adjusted based on the detected value so as to offset the influence of the humidity on the coating process. Processing method.   2. The substrate processing according to claim 1, wherein the humidity of a region where the substrate is transported is detected, and based on the detected value, at least the humidity of the region where the substrate is transported is controlled to be a desired humidity. Method. In the substrate processing method in which the substrate cooled by the cooling plate is transported to the coating processing unit by the substrate transporting means , and the processing liquid is applied to the substrate in the coating processing unit.
The substrate processing is characterized in that the substrate is transported from the cooling plate to the coating processing unit while supplying the gas whose temperature is adjusted to the processing surface of the substrate by the gas supply unit provided in the substrate transporting means. Method.   5. The substrate processing method according to claim 4, wherein the gas supplied to the surface to be processed of the substrate is adjusted to the same temperature as the temperature at which the processing liquid is applied in the coating processing section. In the substrate processing method of transporting the substrate cooled by the cooling plate to the coating processing unit and applying the processing liquid to the substrate in this coating processing unit,
The humidity of the atmosphere in the coating processing unit is detected, and the substrate adjusted from the cooling plate to the coating processing unit while supplying the gas adjusted to the same humidity as the humidity to the processing surface of the substrate based on the detected value. The substrate processing method characterized by conveying. In the substrate processing method of transporting the substrate cooled by the cooling plate to the coating processing unit and applying the processing liquid to the substrate in this coating processing unit,
The substrate from the cooling plate to the coating processing unit while detecting the humidity of the atmosphere in the coating processing unit and supplying the temperature-adjusted gas to the processing surface of the substrate to offset the influence of the humidity on the coating processing The substrate processing method characterized by conveying. A cassette station including a placement portion for placing a substrate cassette containing a plurality of substrates, and a delivery means for delivering the substrate to the substrate cassette placed on the placement portion, and the cassette A processing station that is connected to the station and processes the substrate conveyed by the transfer means, the processing station, a cooling plate for cooling the substrate,
An application processing unit for applying a processing liquid to the substrate;
Substrate transport means for transporting the substrate cooled by the cooling plate to the coating processing section;
A temperature detection unit for detecting the temperature of the region in which the substrate is transported by the substrate transport means;
Transport determined based on the detection value of the temperature detection unit and the transport time of the substrate from the cooling plate to the coating processing unit so that the temperature of the substrate transported to the coating processing unit becomes the coating temperature of the processing liquid. And a controller for adjusting the temperature of the cooling plate based on a change width of the substrate temperature therein. A cassette station including a placement portion for placing a substrate cassette containing a plurality of substrates, and a delivery means for delivering the substrate to the substrate cassette placed on the placement portion, and the cassette A processing station that is connected to the station and processes the substrate conveyed by the transfer means, the processing station, a cooling plate for cooling the substrate,
An application processing unit for applying a processing liquid to the substrate;
Substrate transport means for transporting the substrate between the cooling plate and the coating processing section;
A gas supply unit provided in the substrate transfer unit, for supplying a temperature-adjusted gas to the processing surface of the substrate while the substrate transfer unit transfers the substrate from the cooling plate to the coating processing unit; And a substrate processing apparatus.   The substrate processing apparatus according to claim 9, wherein the temperature of the gas supplied from the gas supply unit to the surface to be processed of the substrate is adjusted to the coating temperature of the processing liquid in the coating processing unit.   An application station connected to the opposite side of the cassette station of the processing station, and an interface station for transferring the substrate between the processing station and the exposure apparatus. 11. The substrate processing apparatus according to 8, 9, or 10, wherein a resist solution is applied to the substrate.   An application station connected to the opposite side of the cassette station of the processing station, and an interface station for transferring the substrate between the processing station and the exposure apparatus. 12. The substrate processing apparatus according to claim 8, wherein a development process is performed on the substrate exposed by the exposure apparatus.

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