JP2004235659A - Block for processing substrate and device for processing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an application and development device for applying a resist to a substrate and developing the substrate after exposure, in which the application processing of an antireflection film and the like can be performed under the condition that the substrate is maintained with a high precision at a predetermined temperature and thereby, the processing with a sufficient precision can be performed, for example, the target film thickness with a high precision of an application film on the substrate can be obtained. <P>SOLUTION: The application and development device is constituted by using a plurality of unit blocks equipped with a plurality of processing parts for performing a predetermined processing to the substrate and a plurality of substrate carrier means for performing the delivery of the substrate between the processing parts. A plurality of the substrate carrier means are composed of the substrate carrier means which treats the substrate processed by processing liquid and a dedicated carrier means which conveys the substrate between a development part or an antireflection film forming part and a cooling part for cooling the substrate. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus block and a substrate processing apparatus that perform, for example, a coating process or a developing process of a resist liquid on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display.

  In a photolithography technique in a semiconductor device manufacturing process, a resist is applied to a surface of a semiconductor wafer (hereinafter, referred to as a wafer), the applied resist is exposed to a predetermined pattern, and further developed to develop a predetermined pattern. A resist film is formed. Such a series of processing is performed by a system in which an exposure apparatus is connected to a coating / developing apparatus.

  FIG. 15 is a plan view showing a conventional example of such an apparatus. A cassette C containing 25 substrates, for example, 25 semiconductor wafers, is carried into a cassette stage 1 of a cassette station A1.

  A processing station A2 is connected to the cassette station A1, and an exposure apparatus A4 is connected to the processing station A2 via an interface station A3. The processing station A2 includes, for example, two coating units 11 for applying a resist solution to the wafer W and, for example, two developing units for developing the exposed wafer W (in this example, the developing unit is located at a lower stage). Units are arranged). When the anti-reflection film is formed before applying the resist to the wafer W, an anti-reflection film forming unit is further provided.

  The station A2 has, for example, three shelf units 12, 13, and 14 on which the wafers W are mounted in multiple stages. Each shelf of these shelf units 12, 13, and 14 has a heating unit and a cooling unit. And a transfer unit for the wafer W. The wafer W is transferred by the wafer transfer means 15 between the coating unit 11, the developing unit, and the shelf units 12, 13, and 14.

  In such a system, the wafer W in the cassette C on the cassette stage 1 is taken out by the transfer arm 16 and sent to the coating unit 11 through the transfer section of the shelf unit 12, where the resist is transferred. Is applied. Thereafter, the wafer W is transferred and exposed through the route of the wafer transfer means 15 → the transfer section of the shelf unit 13 → the transfer arm 17 of the interface station A3 → the exposure apparatus A4. The exposed wafer W is conveyed to the processing station A2 in a reverse path and developed by a developing unit (not shown) provided at the lower stage of the coating unit 11, and then transferred from the wafer conveying means 15 to the shelf unit 12. → It is transported along the path of cassette C. Reference numeral 17 denotes a transfer arm for transferring the wafer W between the processing station A2 and the exposure apparatus A4.

  The present invention has been made under such circumstances, and an object of the present invention is to provide a technique for reducing the load on the substrate transfer means and for improving the transfer efficiency. Another object of the present invention is to perform processing while maintaining the substrate at a predetermined temperature with high accuracy, and thereby to achieve high-precision processing such as obtaining a target film with high accuracy, for example, for a coating film on the substrate. It is an object of the present invention to provide a technology capable of performing the above. Still another object of the present invention is to provide a substrate processing apparatus in which the number of systems can be easily increased or decreased.

The present invention is a block for a substrate processing apparatus that is a unit block for configuring a substrate processing apparatus that performs a series of processing on a substrate, the processing unit performing a predetermined processing on a substrate, and each of the processing units And a plurality of substrate transfer means for transferring the substrate between the substrate processing apparatus and the substrate processing apparatus.
This substrate processing apparatus block can have, for example, the following configuration.
The plurality of processing units include a coating unit for coating a substrate with a coating liquid and a heat treatment unit for heat-treating the substrate.
The plurality of processing units include a developing unit that develops the substrate on which the coating liquid is applied, and a heat treatment unit that heat-treats the substrate.
The plurality of substrate transporting means transports a substrate between a substrate transporting means for handling a substrate processed with a processing liquid and a coating unit, a developing unit or an antireflection film forming unit and a cooling unit for cooling the substrate. Dedicated transport means.
The substrate transfer means includes an arm for holding the substrate, the arm holding the substrate configured to be rotatable around a vertical axis, to be able to move up and down along the vertical axis, and to be able to advance and retreat in the rotational radius direction.

  Another aspect of the present invention is a substrate processing apparatus comprising a plurality of substrate processing apparatus blocks configured as described above.

This substrate processing apparatus block can have, for example, the following configuration.
The substrate processing apparatus block includes an anti-reflection film forming section for forming an anti-reflection film before applying a coating liquid on the substrate and a heat treatment section for performing heat treatment on the substrate, or a coating liquid for the substrate. Or a developing unit for developing a substrate coated with a coating liquid and the heat treatment unit.
A configuration in which a transfer unit for transferring a substrate is provided at a boundary between a plurality of substrate processing device blocks adjacent to each other in a horizontal plane.
Each of the anti-reflection film forming unit, the coating unit, and the developing unit is stacked in a plurality of stages, and a container for storing the processing liquid used in each of the liquid processing units is stored and stacked in a plurality of stages. And a container storage unit provided next to each of the liquid processing units.

  Still another invention is a block for a substrate processing apparatus, which is a unit block for configuring a substrate processing apparatus for performing a series of processing on a substrate, and a plurality of processing units for performing a predetermined processing on the substrate; A plurality of substrate transfer means for transferring a substrate to and from each processing unit are housed therein, and a block for a substrate processing apparatus characterized by being provided with an individual casing partitioned from the others. is there.

  According to the present invention, since a plurality of processing units and a plurality of substrate transfer units for transferring a substrate between the respective processing units are provided, the transfer load of the substrate transfer unit can be reduced. Also, the transfer efficiency is high. Further, a substrate transporting means for handling the substrate treated with the processing liquid, and a dedicated transporting means for transporting the substrate between the coating unit, the developing unit or the antireflection film forming unit and the cooling unit for cooling the substrate, By distinguishing, it is possible to perform processing while maintaining the substrate at a predetermined temperature with high accuracy, thereby performing high-precision processing such as obtaining a target film thickness with high accuracy for a coating film on the substrate, for example. Can be. Furthermore, by configuring a substrate processing apparatus using a plurality of substrate processing apparatus blocks, it is possible to easily cope with an increase or decrease in the number of systems.

  Hereinafter, an embodiment in which the substrate processing apparatus of the present invention is applied to a substrate coating and developing apparatus will be described. FIG. 1 is a schematic perspective view showing the inside of this embodiment, and FIG. 2 is a schematic plan view. In the figure, S1 is a cassette station, S2 is a processing station for applying a resist to the wafer W, developing processing, and the like, S3 is an interface station, and S4 is an exposure station.

  The cassette station S1 is a mounting section on which wafer cassettes (hereinafter referred to as "cassettes") 22 each forming, for example, five substrate cassettes accommodating a plurality of substrates, for example, 25 wafers W, are arranged in the X direction. And a transfer arm 23 serving as transfer means for transferring a wafer W between a cassette 22 on the cassette stage 21 and a transfer portion of a processing station S2 described later. And The transfer arm 23 is configured to be movable up and down, movable in the X and Y directions, and rotatable about a vertical axis.

  The processing station S2 is configured by arranging three blocks B1, B2, and B3 toward the back side when viewing the exposure station S3 from the cassette station S1. The blocks B1, B2, B3 and the interface station S3 are surrounded by a housing, and are located between the blocks B1, B2, B3, between the block B1 and the cassette station S1, and between the block B3 and the interface station S3. It is partitioned so that each atmosphere is partitioned. The cassette station S1 and the blocks B1, B2, B3 have a clean air downflow.

  The block B1 includes a shelf unit R1 provided along the back surface of the cassette station S1, a shelf unit R2 provided on the left and right sides when viewed from the cassette station S1, and an anti-reflection film forming liquid processing unit. Unit 3, a main arm 4A serving as a substrate transfer unit for transferring the wafer W between the shelf units R1, R2 and the anti-reflection film forming unit 3 and between the transfer units of the adjacent block B2, and a container storage unit to be described later. And a chemical unit 5A.

  FIG. 3 is an explanatory diagram in which a part of the cassette station S1 and the block B1 is developed in a plan view when viewed from the side. As shown in FIG. 3, the shelf unit R1 has a heating unit 24 for heating the wafer W and a cooling unit 25 for cooling the wafer W stacked thereon, and further aligns the wafer W on a part of these shelves. And a transfer unit 27 having a stage for transferring the wafer W between the transfer arm 23 and the main arm 4A. Note that the heating unit 24 and the cooling unit 25 may be respectively assigned to different shelf units.

  The anti-reflection film forming unit 3 will be described with reference to, for example, FIG. 4. Reference numeral 31 denotes a cup, in which a rotatable spin chuck 32 having a vacuum suction function is provided. The spin chuck 32 is configured to be able to move up and down by an elevating mechanism 33. When the spin chuck 32 is located above the cup 31, the spin chuck 32 transfers the wafer W to and from an arm 41 of the transfer means 4A described later. Done. 34 is a discharge nozzle, 35 is a processing liquid supply pipe, and 34a is a support arm for horizontally moving the nozzle. The processing liquid supply pipe 35 has an upstream end protruding into a container 51 storing the processing liquid. The processing liquid stored in the container 51 is sucked by the pump 36 and filtered by the filter 37 to remove particles. The processing liquid excluding the above is discharged through the sack valve 38 and the nozzle 34. The processing liquid discharged from the nozzle 34 is dropped on the rotating wafer W by the spin chuck 32 and is extended to form an anti-reflection film. Further, the inside of the cup 31 is sucked by the exhaust pump 39 via the gas-liquid separating means 39a.

  FIG. 5 is a side view of the layout of the antireflection film forming unit 3 and the chemical unit 5A. The antireflection film forming units 3 are stacked, for example, in three stages. Each of the units 3 includes the above-described cup 31 and the nozzle 34a covered by the housing 30, and a filter unit F provided on an upper portion of the housing 30, and the temperature and humidity of the cleaning unit are adjusted from the filter unit F. A gas downflow is formed, and is separated from the outside atmosphere by the housing 30.

  The chemical unit 5A is provided adjacent to the three-stage anti-reflection film forming unit 3 on the cassette station S1 side as described above. The chemical unit 5A is entirely surrounded by the housing 50 and, for example, has three stages. Containers 51 containing processing liquids used in each of the antireflection film forming units 3 are stored in three stages. Further, inside the chemical unit 5A, processing liquid supply control devices such as a pump 36, a filter 37, and a sack valve 38 are housed. In the drawings, the container 51 is shown as a representative.

  Further, below the lowermost anti-reflection film forming unit 3, utility devices 61 used for each stage of the anti-reflection film forming unit 3 are collectively arranged in the housing 60 to constitute a utility system unit 6A. ing. The utility device 61 includes, for example, an exhaust pump 39 for exhausting the inside of the cup 31, a vacuum pump serving as a suction source for the spin chuck 32, an air source used for an air cylinder forming the elevating unit 33, and a motor for rotating the spin chuck 32. Power source. When the processing liquid is discharged by supplying the pressurized gas into the container, a supply source of the pressurized gas, such as a nitrogen cylinder, also corresponds to the utility device 61. As shown in FIG. 6, the main arm 4A includes an arm 41 for holding a wafer W, a support table 42 for supporting the arm 41 to move forward and backward, a base 43 for supporting the support table 42 to move up and down, A rotation driving unit 44 for driving the base 43 so as to be rotatable around a vertical axis. The arm 41 has a three-stage configuration so as to be able to hold the wafer W, and the peripheral edge of the wafer W is placed on, for example, three pieces of claw portions 45 provided at each stage. .

  Although the block B1 is configured as described above, the block B2 connected to the block B1 has the same configuration. While the block B1 forms an anti-reflection film on the surface of the wafer W, the block B2 is for forming a resist film on the anti-reflection film of the wafer W, and is used instead of the anti-reflection film forming unit 3. Further, a coating unit 7 for coating a resist liquid, which is a liquid processing unit, is disposed. The units 3 and 7 have the same configuration, and the coating unit 7 uses a resist liquid as a processing liquid. R3 and R4 are shelf units, 4B is a main arm, 5B is a chemical unit, and 6B is a utility unit.

  The block B3 connected next to the block B2 is for developing the wafer exposed at the exposure station S4. A total of four developing units 8 are provided on the extension line of the anti-reflection film forming unit 3 and the coating unit 7 as a liquid processing unit. The configuration of the developing unit 8 is substantially the same as that of the anti-reflection film forming unit 3, but is different in that a nozzle having a large number of supply holes arranged in the diameter direction of the wafer W is used. The chemical unit 5C is arranged below the developing unit 8, and the utility unit 6C is arranged below the chemical unit 5C.

  The shelf units R5 and R6 are provided near the block B2 and the interface station S3, respectively, and have almost the same configuration as the shelf units R1 and R2. However, a heating plate and a cooling plate are arranged on one sheet, and the space between them is exclusively transported. And a heating-cooling unit provided with a transfer arm. The reason for providing the heating-cooling unit is based on the necessity of precisely controlling the heating time performed after exposure when a chemically amplified resist is used.

  The interface station S4 connected to the back side of the block B includes a transfer arm 28 that is movable in the X, Y, and Z directions and that is rotatable around a vertical axis. The transfer arm 28 includes the block B3 and the transfer arm 28. The wafer W is transferred between the exposure stations S4.

  Next, the operation of the above embodiment will be described. When the cassette 22 containing, for example, 25 wafers W is loaded into the cassette stage 21 from the outside, the wafer W is taken out of the cassette 21 by the transfer arm 23 and placed on the transfer section 27 in the shelf unit of the block B1. Is transferred to the main arm 4A. In the wafer W, an anti-reflection film is first formed in a block B1, and then, for example, a chemically amplified resist film is formed on the anti-reflection film in a block B2, and then exposed at an exposure station S4. In block B1, the wafer W on which the antireflection film is formed is heated by the heating unit 24 of the shelf unit R1 (R2), and then cooled by the cooling unit 25. Also in the block B2, the wafer W on which the resist film is formed is heated and cooled by the shelf unit R3 (R4). The transfer of the wafer W between the blocks B1, B2, B3 and the interface station S3 is performed through the transfer units in the shelf units R3, R5, R6.

  The exposed wafer W is heated and cooled by the heating-cooling unit in the shelf unit R5 (R6), and is developed by the developing unit 8. The wafer W after the development is heated and cooled in the shelf unit R5 (R6) to complete a series of resist pattern forming steps, and is returned to the original cassette 21 via the blocks B2 and B1.

  According to the above embodiment, since the chemical unit 5A (5B) is provided next to the antireflection film forming unit 3 (coating unit 7), the piping of the processing liquid can be shortened. Therefore, the amount of the expensive processing solution staying is small, and the processing solution stays and is discarded at the time of maintenance or the like, so that the cost can be reduced. Further, since the chemical unit 5A (5B) and the anti-reflection film forming unit 3 (coating unit 7) are close to each other, the liquid is prevented from dripping after the processing liquid is discharged from the pump 36 or the nozzle 34 that quantitatively supplies the processing liquid. Therefore, even if a supply control device such as a sack valve 38 for slightly raising the liquid level in the nozzle 34 by slightly sucking the processing liquid is provided in the chemical unit 5A (5B), the supply control of the processing liquid can be accurately performed because the pressure loss is small. In addition, maintenance can be easily performed by providing the supply control device in the chemical unit 5A (5B). When the units 3 and 7 are stacked in a plurality of stages, for example, if the container 51 and the supply control device are arranged at a height adapted to the units 3 and 7 in each stage, the piping of the processing liquid can be further shortened. Is advantageous.

  Also in the developing unit 8, since the container and the supply control device for the developing solution as the processing liquid are provided below the lowermost developing unit 8, the piping for the developing solution is short and maintenance is easy. Further, since the above-described utility device 61 is disposed below the liquid processing units 3, 7, 8 such as an anti-reflection film forming unit, an exhaust pipe, a vacuum tube, an air supply pipe, a pressurized gas supply pipe, and the like. In this case, the length of the power lines is short, and the power equipment 61 and the power lines are incorporated in each block B1 (B2, B3). Therefore, for example, adjustment is performed before the blocks B1 (B2, B3) are connected. For example, there is an advantage that workability is good.

  FIGS. 7 and 8 show another embodiment of the present invention. In this embodiment, the anti-reflection film forming unit 3 and the coating unit 7 are stacked in two stages, and the anti-reflection film forming unit 3 (the coating unit 7). ), The chemical unit 5A (5B) is arranged, and the utility system unit 6A (6B) is arranged below the chemical unit 5A (5B). In FIG. 8, the arrangement of the antireflection film forming units 3 is shown as a representative. Further, in the blocks B2 and B3, one shelf unit (R1, R4) is provided one by one, and the transfer of the wafer W between the blocks B2 and B3 is performed by an intermediate stage provided at a position accessible from the main arms 4A and 4B. This is configured to be performed by the CPU 91.

  9 to 11 show still another embodiment of the present invention. The layout of the antireflection film forming unit 3 (coating unit 7), the chemical unit 5A (5B), and the utility system unit 6A (6B) in this embodiment is the same as that of the first embodiment shown in FIG. , A cooling unit 101 is provided on the chemical unit 5A (5B), and the cooling unit 101 is partitioned from the transfer area (transfer atmosphere) of the main arm 4A, and the cup 31 of the antireflection film forming unit 3 (coating unit 7). Is configured to be the same as the atmosphere in which is placed. For example, an atmosphere in which the cooling unit 101 is placed is surrounded by a casing 102, and a partition plate 103, which is a part of the casing 30, is interposed between the atmosphere and the atmosphere in the anti-reflection film forming unit 3. A clean gas for forming a common atmosphere, that is, a common clean gas whose temperature and humidity have been adjusted, is lowered from the filter F at the ceiling portion of both atmospheres.

  The reason for such a configuration is as follows. That is, since the thicknesses of the antireflection film and the resist film are affected by the temperature of the wafer W, the heating is performed by the heating unit 24 of the shelf unit R1 (R3), and then the cooling unit 25 performs so-called rough heat removal (rough heat). If the cooling is performed in the cooling unit 101, the temperature of the cooling unit 101 becomes the same as that of the antireflection film forming unit 3 (coating unit 7) since the cooling unit 101 has the same atmosphere. Because it gets better. In this case, the main arm 4A (4B) may be used for conveyance from the cooling unit 101. However, if a dedicated conveyance unit connecting the cooling unit 101 and the anti-reflection film forming unit 3 is provided, the main unit 4A (4B) may be used. This is more preferable because the wafer W does not pass through the transfer area of the main arm 4A (4B).

  The cooling unit 101 may be provided below the chemical unit 5A (5B). In FIG. 11, reference numerals 104 and 105 denote transfer ports for the wafer W formed in the anti-reflection film forming unit 3 (coating unit 7) and the housing 102, respectively. The developing unit 8 also has a three-tiered configuration, similarly to the anti-reflection film forming unit 3, and the configurations of the chemical unit 5C, the utility unit 6C, and the cooling unit 101 (for convenience, the same reference numerals are used). The configuration is the same as that shown in FIGS.

  FIG. 12 shows a modification of the embodiment shown in FIG. 9, in which two three-stage developing units 8 are provided, and a chemical unit and a cooling unit 101 are provided therebetween, and arrangement of shelf units R5 and R6. Is different from the configuration of FIG.

  FIG. 13 is a diagram showing an embodiment of the present invention other than the above. In this embodiment, as in the embodiment shown in FIG. 7, the antireflection film forming unit 3 and the coating unit 7 are stacked in two stages, and a chemical unit 5A (5B) is provided below the unit, and a utility system unit is further provided therebelow. 6A (6B) are provided. The developing unit 8 has the same configuration. The transfer of the wafer W between the block B3 and the interface station S3 is performed via a transfer stage 92 provided in the interface unit S3.

  FIG. 14 is a diagram showing a modification of the embodiment of FIG. In this embodiment, the main arms 4A, 4B and 4C face the antireflection film forming unit 3, the coating unit 7 and the developing unit 8 in the X direction, respectively, and the row of the shelf units R1, R2 and R6. Is disposed on the side opposite to the arrangement of the liquid processing units 3, 7, 8 when viewed from the arrangement of the transporting means 4A, 4B, 4C. The shelf unit R1 of the block B1 near the cassette station S1 is arranged obliquely on the cassette station S1 side with respect to the X direction when viewed from the main arm 4A, and the shelf unit R3 of the block B2 adjacent thereto is connected to the main arm 4B. Are arranged in the X direction when viewed from above. The shelf unit R6 of the block B3 near the interface station S3 is arranged obliquely on the interface station S3 side with respect to the X direction when viewed from the main arm 4C. The transfer of the wafer between the main arms 4A and 4B and between the main arms 4B and 4C is performed via the intermediate stage 91.

  According to the layout as shown in FIG. 14, each block B1, B2, B3 can be reduced in size. That is, the shelf unit R1 (R6) must be provided close to the cassette station S1 (interface station 5), but it is more desirable to arrange it diagonally left (right) in FIG. 14 than to arrange it right beside the main arm 4A (4C). The length in the Y direction can be shortened, and the length in the Y direction can be reduced for the central block B2 by placing the shelf unit R3 at the center. In a semiconductor manufacturing plant, the shorter the depth of the semiconductor manufacturing apparatus is, the more advantageous it is, so the layout of FIG. 14 is effective.

  In the above, the coating and developing apparatus may not include the block B1 including the antireflection film forming unit. In this case, for example, the hydrophobic treatment is performed in the shelf unit R3 (R4) of the block B2 including the coating unit. Further, the present invention is not limited to a coating and developing apparatus, but can also be applied to an apparatus in which a processing solution containing a precursor of a silicon oxide film is coated on a substrate by spin coating or the like, and then heated and cooled. The substrate is not limited to a wafer, but may be a glass substrate for a liquid crystal display.

1 is a perspective view illustrating an overview of a coating and developing device according to an embodiment of the present invention. FIG. 2 is a schematic plan view showing the coating and developing device of FIG. 1. FIG. 2 is an explanatory diagram showing a part of the coating and developing device of FIG. 1 developed horizontally. FIG. 2 is an explanatory diagram showing a liquid processing unit and a processing liquid supply system used in the coating and developing apparatus of FIG. 1. FIG. 2 is a side view schematically showing a liquid processing unit and related parts of the coating and developing apparatus of FIG. 1. FIG. 3 is a perspective view showing a main arm which is a substrate transfer device. FIG. 11 is a schematic plan view showing a coating and developing apparatus according to another embodiment of the present invention. FIG. 8 is a side view schematically showing a liquid processing unit and related parts of the coating and developing apparatus of FIG. 7. FIG. 13 is a schematic plan view showing a coating and developing apparatus according to still another embodiment of the present invention. FIG. 10 is a side view schematically showing a liquid processing unit and related parts of the coating and developing apparatus of FIG. 9. FIG. 10 is a schematic perspective view showing a configuration in which a cooling unit is arranged in an atmosphere in a liquid processing unit in the embodiment of FIG. 9. FIG. 14 is a schematic plan view showing a coating and developing apparatus according to still another embodiment of the present invention. FIG. 9 is a schematic plan view showing a coating and developing apparatus according to an embodiment other than the above. FIG. 9 is a schematic plan view showing a coating and developing apparatus according to an embodiment other than the above. It is a schematic plan view showing a conventional coating and developing device.

Explanation of reference numerals

S1 Cassette station S2 Processing station S3 Interface station S4 Exposure station B1 to B3 Block 22 Wafer cassette R1 to R6 Shelf unit 23 Heating unit 25 Cooling unit 3 Antireflection film forming unit 31 Cup 32 Spin chuck 34 Nozzle 36 Pump 37 Filter 38 Sack valve 39 Exhaust pump 4A-4C Main arm 5A-5C Chemical unit 51 Container 6A-6C Power system unit 61 Power equipment 7 Coating unit 8 Developing unit

Claims (10)

A block for a substrate processing apparatus that is a unit block for configuring a substrate processing apparatus that performs a series of processing on a substrate,
A plurality of processing units for performing predetermined processing on the substrate,
A block for a substrate processing apparatus, comprising: a plurality of substrate transfer means for transferring a substrate to and from each of the processing units. The block for a substrate processing apparatus according to claim 1,
The block for a substrate processing apparatus, wherein the plurality of processing units include a coating unit for coating a substrate with a coating liquid and a heat treatment unit for heat-treating the substrate.   The block for a substrate processing apparatus according to claim 1, wherein the plurality of processing units include a developing unit that develops the substrate on which the coating liquid is applied, and a heat treatment unit that heat-treats the substrate. For a substrate processing apparatus. The block for a substrate processing apparatus according to any one of claims 1 to 3,
The plurality of substrate transporting means transports a substrate between a substrate transporting means for handling a substrate processed with a processing liquid and a coating unit, a developing unit or an antireflection film forming unit and a cooling unit for cooling the substrate. And a dedicated transfer means. The block for a substrate processing apparatus according to any one of claims 1 to 4,
The substrate transfer means includes an arm configured to be rotatable around a vertical axis, to be able to move up and down along the vertical axis, and to be able to advance and retreat in a rotational radial direction, and to have an arm for holding a substrate. For a substrate processing apparatus.   A substrate processing apparatus comprising a plurality of substrate processing apparatus blocks according to any one of claims 1 to 5. The substrate processing apparatus according to claim 6,
The substrate processing apparatus block includes an anti-reflection film forming section for forming an anti-reflection film before applying a coating liquid on the substrate and a heat treatment section for performing heat treatment on the substrate, or a coating liquid for the substrate. A substrate processing apparatus comprising: a coating unit for applying a coating liquid and the heat treatment unit; or a development unit for developing a substrate coated with a coating liquid and the heat treatment unit. The substrate processing apparatus according to claim 6,
A substrate processing apparatus, wherein a transfer unit for transferring a substrate is provided at a boundary between a plurality of substrate processing apparatus blocks adjacent in a horizontal plane. A block for a substrate processing apparatus that is a unit block for configuring a substrate processing apparatus that performs a series of processing on a substrate,
A plurality of processing units for performing predetermined processing on the substrate,
A block for a substrate processing apparatus, comprising: a plurality of substrate transfer means for transferring a substrate to and from each of the processing units; and a separate housing partitioned from the others. . The substrate processing apparatus according to claim 6,
The antireflection film forming section, the coating section, each liquid processing section of the developing section, each stacked in a plurality of stages,
A substrate processing apparatus, comprising a container for storing a processing liquid used in each of the liquid processing units, and a container storage unit provided next to the liquid processing units stacked in a plurality of stages.

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