WO2008059684A1 - Substrate carrying equipment - Google Patents

Substrate carrying equipment Download PDF

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Publication number
WO2008059684A1
WO2008059684A1 PCT/JP2007/070119 JP2007070119W WO2008059684A1 WO 2008059684 A1 WO2008059684 A1 WO 2008059684A1 JP 2007070119 W JP2007070119 W JP 2007070119W WO 2008059684 A1 WO2008059684 A1 WO 2008059684A1
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
lid
unit
substrate
shelf
Prior art date
Application number
PCT/JP2007/070119
Other languages
French (fr)
Japanese (ja)
Inventor
Yuuichi Yamamoto
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to KR1020097011895A priority Critical patent/KR101355693B1/en
Publication of WO2008059684A1 publication Critical patent/WO2008059684A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67784Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
    • H01L21/6779Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks the workpieces being stored in a carrier, involving loading and unloading

Definitions

  • the present invention relates to a substrate transfer processing apparatus.
  • a photolithography technique is used to form an ITO (Indium Tin Oxide) thin film or an electrode pattern on a substrate such as a semiconductor wafer or an LCD glass substrate.
  • ITO Indium Tin Oxide
  • a photoresist is applied to a substrate, a resist film formed thereby is exposed in accordance with a predetermined circuit pattern, and this exposure pattern is developed to form a desired circuit pattern on the resist film. It is performed by a series of steps to form.
  • Patent Document 1 Japanese Patent Laid-Open No. 2003-218018
  • Patent Document 2 Japanese Patent Laid-Open No. 2002-134588
  • V an increase in the number of carriers is required due to the small lot processing associated with the inline inspection machine module required for multi-patterning technology.
  • the present invention has been made in view of the above-mentioned problems, and can increase the number of carriers without increasing the size of the apparatus more than necessary, enabling a high-speed substrate processing and a small lot processing. It is an object to provide a transfer processing device.
  • a substrate transfer processing apparatus of the present invention includes a carrier station that loads and unloads a carrier that accommodates a substrate to be processed, and a processing unit that performs various types of processing on the substrate to be processed.
  • a substrate transfer processing apparatus comprising: a processing station; and a transfer means for transferring a substrate to be processed between the carrier station and the processing station, wherein the carrier station has a plurality of stages on which a plurality of carriers can be placed.
  • a carrier mounting section having a mounting shelf; a carrier stock section positioned above the carrier mounting section; and carrier delivery means for delivering a carrier between the carrier mounting section and the carrier stock section; Substrate carrier loading / unloading means for loading / unloading a substrate to be processed with respect to the carrier loaded into the carrier loading portion.
  • the lower mounting shelf is formed so as to be movable with respect to the upper mounting shelf by the moving mechanism to a position below the upper mounting shelf and an outer position that does not interfere in the vertical direction.
  • the carrier delivery means is formed so as to be able to deliver a carrier to a mounting shelf in an outward position.
  • a plurality of carriers can be placed on a plurality of placement shelves provided in the carrier station, and the placement shelf located in the lower stage does not interfere with the upper placement shelf. This is the force to deliver the carrier to and from the carrier stock section with respect to the shelf described above while moving to the outward position.
  • the substrate transfer processing apparatus receives a detection signal detected by the substrate detection means and a substrate detection means for detecting a storage state of the substrate to be processed accommodated in the carrier, When the substrate to be processed accommodated in the carrier is in a predetermined number of states, it is configured to further comprise a carrier delivery means and a control means for transmitting an operation signal to the moving mechanism of the mounting shelf. it can.
  • the substrate detection means detects the accommodated state, and the detection signal Can be transmitted to the control means to recognize the accommodation state (number of substrates) of the substrate to be processed in the carrier.
  • the accommodation state (number) of the substrates to be processed in the carrier reaches a predetermined state (number) set in advance, the lower placement shelf is placed on the upper placement based on the control signal from the control means.
  • the placement shelf located in the lower stage places one carrier independently, and is independent of the lower position and the outward position of the upper placement shelf.
  • it can be configured to have a plurality of movable shelves.
  • the force S is used to deliver each carrier between the mounting shelf and the carrier stock unit.
  • the carrier includes a storage container that stores a plurality of substrates to be processed, and a lid that opens and closes an opening of the storage container.
  • the station includes a lid opening / closing device that opens and closes the lid, and the lid opening / closing device is formed so as to be movable up and down with respect to the carrier placed on each stage mounting shelf.
  • the force S can be configured so that the lid is opened at a position that does not interfere with the upper and lower placement shelves.
  • the lid provided on the carrier placed on the placement shelf of each stage is opened and closed.
  • the substrate to be processed can be carried in and out of the carrier.
  • the force S for placing a plurality of carriers on a plurality of stages of mounting shelves can be achieved, and the mounting shelves positioned at the lower stage do not interfere with the upper stage mounting shelves. Since the carrier can be transferred to and from the carrier stock section with respect to the mounting shelf while moving to the outward position, the number of carriers can be increased without increasing the size of the device more than necessary. In addition to high-speed processing of substrates and multiplexing of processing (for example, in-line inspection machine modules required for multi-patterning technology that uses lithographic processes twice) it can.
  • FIG. 1 is a schematic perspective view showing an example of a resist coating / developing apparatus provided with a substrate transfer processing apparatus according to the present invention.
  • FIG. 2 is a schematic plan view of the resist coating / developing apparatus.
  • FIG. 3 is a schematic side view showing a carrier station in the present invention.
  • FIG. 4A is a perspective view showing a configuration of a carrier in the present invention.
  • FIG. 4B is a transverse sectional view showing the structure of the carrier in the present invention.
  • FIG. 5A is a side view showing different open states of the carrier lid by the lid opening / closing device according to the present invention.
  • FIG. 5B is a side view showing different open states of the carrier lid by the lid opening / closing device according to the present invention.
  • FIG. 6 is a schematic side view showing a processing station in the present invention.
  • FIG. 7 is a schematic side view showing a measuring apparatus according to the present invention.
  • FIG. 8A is a schematic side view showing an example of carrier loading / unloading operations and wafer loading / unloading operations at a carrier station.
  • FIG. 8B is a schematic side view showing an example of carrier loading / unloading operations and wafer loading / unloading operations at the carrier station.
  • FIG. 8C is a schematic side view showing an example of carrier loading / unloading operations and wafer loading / unloading operations at the carrier station.
  • FIG. 8D is a schematic side view showing an example of carrier loading / unloading operations and wafer loading / unloading operations at the carrier station.
  • FIG. 8E is a schematic side view showing an example of carrier loading / unloading operations and wafer loading / unloading operations at the carrier station.
  • FIG. 1 is a schematic perspective view showing the configuration of a resist coating / developing apparatus as an embodiment of a substrate transfer processing apparatus of the present invention.
  • FIG. 2 is a plan view showing the configuration of the resist coating and developing apparatus shown in FIG.
  • This resist coating / development processing apparatus is a carrier station for carrying in / out a carrier 20 (FOUP) in which, for example, 25 semiconductor wafers W (hereinafter referred to as wafers W) are hermetically contained.
  • Interface unit S3 that transfers wafer W between exposure station S4 and processing station S2 configured by vertically arranging S1 and a plurality of unit blocks B1 to B4, for example, four unit blocks B1 to B4, and processing with carrier station S1 And a measuring station S 5 interposed between the stations S 2.
  • Each of the carrier stations S1 includes a carrier mounting unit 10 having a plurality of, for example, two mounting shelves 11, 12 on which a plurality of, for example, eight carriers 20 can be mounted, and the carrier mounting unit.
  • the carrier stock unit 13 located above 10, the carrier lifter 14 that is a carrier delivery means for delivering the carrier 20 between the carrier mounting unit 10 and the carrier stock unit 13, and the carrier mounting unit 10 (loading)
  • a transfer arm C as a substrate loading / unloading means for loading / unloading the wafer W to / from the carrier 20 placed on the carrier 20.
  • the carrier 20 has an opening 21 on one side and a plurality of (for example, 25) wafers W on the inner wall with an appropriate interval! /
  • the storage container 22 having a holding groove (not shown) that is held in a horizontal state, and the opening 21 of the storage container 22 is opened and closed.
  • the lid 23 is opened and closed by operating the engagement / disengagement mechanism 24 incorporated in the lid 23 with the lid opening / closing device 25.
  • the state of the wafer W accommodated in the carrier 20, for example, the number of wafers and the posture of the wafer W are detected by the mapping sensor 26 which is a substrate detection unit, and the detection signal is a control unit which is a control unit.
  • the wafer lifter 14, the carrier transfer robot 15 disposed in the carrier stock unit 13, the lid opening / closing device 25, the transfer arm C, the moving mechanism 16 described later, etc. It is configured to work.
  • the lower mounting shelf 12 located in the lower stage of the carrier mounting portion 10 is formed of a plurality of, for example, four shelf bodies 12a on which one carrier 20 can be mounted independently.
  • Each shelf 12a has a lower position of the upper mounting shelf 11 with respect to the upper mounting shelf 11 by a moving mechanism 16 formed by, for example, an air cylinder, a ball screw mechanism, a timing belt, etc. It does not interfere with the direction! /, It is configured to be movable to the outside position.
  • a carrier mounting table 27 on which each carrier 20 is mounted is provided on the upper mounting shelf 11 and the lower mounting shelf 12.
  • the carrier mounting table 27 is formed to be movable toward and away from a wafer carry-out port 19a and a wafer carry-in port 19b, which will be described later.
  • the carrier stock unit 13 is provided with a carrier transport robot 15 that can move in the horizontal XY direction and the vertical Z direction. By this carrier transport robot 15, a plurality of carriers 20 are transferred to the carrier stock unit 13. It is arranged in the inside.
  • the carrier stock unit 13 is provided with a carrier 20 containing the wafer W, an empty carrier 20 and the like.
  • the carrier lifter 14 is formed to be movable in the horizontal XY direction and the vertical Z direction, and is configured to be able to transfer the carrier 20 to and from the carrier transport robot 15. With the carrier lifter 14 configured in this way, the carrier 20 in the carrier stock unit 13 is transported to the carrier mounting unit 10 or placed on the upper mounting shelf 11 of the carrier mounting unit 10. The carrier 20 can be transported by the carrier stock section 13. [0030] When the carrier 20 is delivered to the lower mounting shelf 12, the outer side which does not interfere with the upper mounting shelf 11 in the vertical direction with the shelf 12a of the lower mounting shelf 12 by the moving mechanism 16. The carrier 20 can be delivered by the carrier lifter 14 while moving to the position.
  • the carrier 20 can be smoothly delivered to the upper mounting shelf 11 and the lower mounting shelf 12, and a large number of devices without increasing the size more than necessary (for example, eight carriers 20 can be mounted on the carrier mounting portion 10.
  • the lid opening / closing device 25 includes an engagement pin 25a that engages with an engagement / disengagement mechanism 24 of the lid body 23 of the carrier 20, a lid body holding plate 25b, and a lid body. And an elevating mechanism 25c for moving the holding plate 25b in the vertical direction.
  • the elevating mechanism 25c is formed to be movable up and down with respect to the carrier 20 mounted on the upper mounting shelf 11 or the lower mounting shelf 12, and the lid body.
  • the lower mounting shelf 12 opens the lid 23 on the lower side that does not interfere with the loading / unloading of the wafer W with respect to the carrier 20 on the upper mounting shelf 11.
  • the upper mounting shelf 11 is configured to open the lid 23 on the upper side that does not hinder the loading / unloading of the wafer W with respect to the carrier 20 on the lower mounting shelf 12. ing. Accordingly, it is possible to smoothly carry in and out the wafer W with respect to each carrier 20, and the throughput can be improved.
  • the wall W 18 that divides the carrier mounting section 10 and the chamber 17 including the mapping sensor 26, the lid opening / closing device 25, and the transfer arm C has a wafer W carry-out port 19a and a carry-in port 19b. Is provided.
  • a wafer exit 18a for wafer W is provided in the wall 18 where the upper mounting shelf 11 is close, and a wafer entrance 19b for wafer W is provided in a position where the lower mounting shelf 12 is close.
  • ! /, Ru (see Figure 1).
  • a processing station S2 which is connected to the back side of the carrier station S1 via a measurement station S5 and is surrounded by a casing 70, is connected.
  • the processing station S2 includes, from the lower side, a first unit block (CHM) B1 for storing chemical liquid containers such as a resist solution and a developing solution, and a second unit block (DEV layer for performing a developing process).
  • CHM first unit block
  • DEV layer second unit block
  • B2 2-stage The coating film forming unit block for performing the resist solution coating process and the third and fourth unit blocks (COT layers) B3 and B4 which are the cleaning unit blocks for performing the cleaning process are hit ij.
  • one of the unit blocks for forming the coating film for example, the third unit block (COT layer) B3 is a unit block for performing an antireflection film forming process formed on the lower layer side of the resist film. (BCT layer) may be used. Further, a unit block for forming an antireflection film for performing an antireflection film forming process formed on the upper layer side of the resist film may be provided on the upper stage of the fourth unit block (COT layer) B4. Good.
  • the second to fourth unit blocks B2 to B4 are disposed on the front surface side, and are disposed on the rear surface side with a liquid processing unit for applying a chemical solution to the wafer W, and the liquid processing unit.
  • Processing units such as various heating units for pre-processing and post-processing of the processing performed in the above, the liquid processing unit disposed on the front side, the heating unit disposed on the back side, etc.
  • the development processing unit at the lower level and the processing unit such as the heating unit and the processing unit with the resist processing unit at the upper level Main arms A1 and A2 which are dedicated substrate transfer means.
  • the unit blocks B2 to B4 have the same layout layout of the liquid processing unit, the processing unit such as the heating unit, and the conveying means between the unit blocks B2 to B4.
  • the same arrangement layout means that the center of the wafer W in each processing unit, that is, the center of the spin chuck that is the means for holding the wafer W in the liquid processing unit, the heating plate or cooling in the heating unit, and so on. It means that the center of the plate is the same.
  • the above DEV layer B2 has a measuring station S5 on the carrier station S1 side in the length direction of the DEV layer B2 (Y direction in the figure) at the center of the DEV layer B2.
  • a transfer area R1 of the wafer W for connecting the interface portion S3 (horizontal movement area of the main arm A1) is formed.
  • COT layers B3 and B4 are not shown, but like DEV layer B2, COT layers B3 and B4 are almost centered in the length direction of COT layers B3 and B4 (in the Y direction in the figure).
  • a transfer area R2 (horizontal movement area of the main arm A2) for the wafer W for connecting the carrier station S1 side and the interface section S3 is formed! /.
  • the front side ( One-stage development unit 3 1 having a plurality of, for example, three development processing units for performing development processing on the right side as the liquid processing unit on the right side from the carrier station SI side), 2 A step coating unit 32 and a cleaning unit (not shown) are provided.
  • Each unit block is provided with, for example, four shelf units Ul, U2, U3, and U4 in order from the front side to the left side.
  • Various units for pre-processing and post-processing of the processing performed in the unit 31 are stacked in a plurality of stages, for example, three stages.
  • the developing unit 31 and the shelf units U1 to U4 are partitioned by the transport region R1, and by ejecting the cleaning air to the transport region R1 and exhausting it, the floating of particles in the region is suppressed. It ’s going to be.
  • a post-exposure baking unit that heat-processes the wafer W after exposure is called. It is called a heating unit (PEB) or a post-baking unit that heats the wafer W after development to remove moisture! /, A heating unit (POST), etc. It is.
  • Each processing unit such as the heating unit (PEB, POST) is accommodated in the processing container 40, and the shelf units U1 to U4 are configured by stacking the processing containers 40 in three stages.
  • a wafer loading / unloading port 41 is formed on the surface of the processing container facing the transfer region R1.
  • the heating unit (PEB, POST) is formed so that the heating temperature and heating time can be adjusted.
  • the transfer arm R1 is provided with the main arm A1.
  • the main arm A 1 transfers wafers to and from all modules in the DEV layer B2 (where the wafer W is placed), for example, each processing unit of the shelf units U1 to U4 and each part of the developing unit 31. For this purpose, it can move in the horizontal X and Y directions and the vertical Z direction, and can rotate around the vertical axis.
  • main arm Al (A2) is configured in the same manner, and the main arm A1 will be described as a representative example.
  • An arm main body 50 having two curved arm pieces 51 is provided, and these curved arm pieces 51 are configured to be movable forward and backward independently of each other along a base (not shown).
  • This base is configured to be rotatable about the vertical axis, and is configured to be movable in the Y direction and movable up and down.
  • the curved arm piece 51 is configured to be movable back and forth in the X direction, movable in the Y direction, freely movable up and down, and rotatable about the vertical axis, and is arranged on each unit of the shelf units U1 to U4 and on the carrier station S1 side.
  • the wafer W can be transferred between the delivery unit TRS1 of the shelf unit U5 and the liquid processing unit.
  • the driving of the main arm A1 is controlled by a controller (not shown) based on a command from the control unit 60.
  • the receiving order of the wafers W can be arbitrarily controlled by a program.
  • the unit blocks B3 and B4 for coating film formation are both configured in the same manner, and are configured in the same manner as the unit block B2 for development processing described above.
  • a coating unit 32 for performing a resist solution coating process on the wafer W is provided as a liquid processing unit, and the shelf units U1 to U4 of the COT layers B3 and B4 are provided with a resist solution coating unit. Equipped with a heating unit (CLHP) that heats the wafer W and a hydrophobic treatment unit (ADH) that improves the adhesion between the resist solution and the wafer W, and is configured in the same way as the DEV layer B2. Yes.
  • CLHP heating unit
  • ADH hydrophobic treatment unit
  • the coating unit, the heating unit (CLHP), and the hydrophobizing unit (ADH) are configured to be divided by the transfer area R2 of the main arm A2 (horizontal movement area of the main arm A2).
  • the main arm A2 delivers the wafer W to the delivery unit TRS1 of the shelf unit U5, the coating unit 32, and the processing units of the shelf units U;! To U4. Is done.
  • the hydrophobic treatment unit (ADH) described above may be provided in any one of the unit blocks B3 and B4 for forming a force coating film that performs gas treatment in an HMDS atmosphere.
  • the measurement station S5 arranged adjacent to the processing station S2 includes a carrier station S1 and a casing 80 connected to the casing 70 of the processing station S2.
  • a line width measuring device 90 that is an apparatus
  • a transfer arm D that is a transfer means for transferring the wafer W to and from the line width measuring device 90
  • a delivery stage TRS2 are provided.
  • the transfer arm D is connected to the delivery stage TRS2 in the measurement station S5, to the delivery stage TRS1 in the processing station S2, and to the line width measuring device 90.
  • the wafer W is transferred between and in the horizontal X and Y directions and in the vertical Z direction.
  • the line width measuring apparatus 90 includes a mounting table on which the wafer W is mounted horizontally.
  • the mounting table 91 forms, for example, an XY stage, and is formed to be movable in the horizontal X direction and the Y direction.
  • a light irradiation unit 92 that irradiates light on the wafer W mounted on the mounting table 91 from an oblique direction, and a light irradiation unit 92 that is also irradiated with the force and detects light reflected by the wafer W is detected.
  • a light receiving unit 93 is disposed! Information on the light detected by the light receiving unit 93 can be output to the detection unit 94, and the detection unit 94 is formed on the wafer W based on the acquired light information! The light intensity distribution of the reflected light reflected from the pattern can be measured.
  • the line width measuring apparatus 90 can detect impurities and particles adhering to the wafer W in addition to measuring the line width of the pattern.
  • the control unit 60 includes, for example, a calculation unit 61, a storage unit 62, and an analysis unit 63.
  • the calculation unit 61 calculates each light intensity in calculating reflected light reflected from a plurality of virtual patterns having different line widths based on, for example, known information such as the optical constant of the resist film, the pattern shape, and the structure of the resist film. Distribution can be calculated.
  • the storage unit 62 can store each calculated light intensity distribution for the virtual pattern calculated by the calculation unit 61 and create a library thereof.
  • the light intensity distribution for the actual pattern on the wafer W measured by the detection unit 94 can be output to the analysis unit 63.
  • the analysis unit 63 collates the light intensity distribution of the actual pattern output from the detection unit 94 with the light intensity distribution of the virtual pattern stored in the library of the storage unit 62, and the virtual pattern with which the light intensity distribution matches.
  • the line width of the virtual pattern can be estimated as the line width of the actual pattern to measure the line width.
  • the line width information measured as described above is transmitted to the exposure apparatus S4 and the heating unit (PEB).
  • the exposure apparatus S4 has an exposure control unit (not shown), and exposure is performed according to exposure conditions such as the exposure position, exposure amount, and exposure focus on the optical system wafer W preset by the exposure control unit.
  • the process is configured to be controllable.
  • Therefore by transmitting a control signal from the control unit 60 to the exposure apparatus S4 and the heating unit (PEB), based on the measurement information of the line width of the pattern, in the exposure process of the second and subsequent lithography steps
  • the force S is used to correct the exposure position, exposure amount, exposure focus, etc., and to correct the heating temperature, heating time, etc. in the heating process of the heating unit (PEB) after exposure.
  • a shelf unit U6 is provided at a position where the main arm A1 can access the adjacent area of the processing station S2 and the interface unit S3.
  • the shelf unit U6 includes a delivery stage TRS3 and a delivery stage (not shown) having a cooling function for delivering the wafer W so as to deliver the wafer W to and from the main arm A1 of the DEV layer B2. ing.
  • a peripheral edge exposure device (WEE) power stage is arranged in a region adjacent to the processing station S2 and the interface unit S3, as shown in FIG. 2 and FIG. 6, a peripheral edge exposure device (WEE) power stage is arranged.
  • WEE peripheral edge exposure device
  • an exposure apparatus S4 is connected to the back side of the shelf unit U6 in the processing station S2 via an interface unit S3.
  • the interface unit S3 includes an interface arm E for delivering the wafer W to each part of the shelf unit U6 of the DEV layer B2 of the processing station S2 and the exposure apparatus S4.
  • This interface arm E forms a means for transporting the wafer W interposed between the processing station S2 and the exposure apparatus S4.
  • the interface arm E is used for the transfer stage TRS3 etc. of the DEV layer B2.
  • C It is configured to move in the horizontal X, Y and vertical Z directions and to rotate around the lead straight axis so as to deliver W!
  • the carrier 20 in the carrier stock unit 13 is loaded, that is, placed on the carrier placement unit 10 by the carrier lifter 14.
  • 25 wafers W are accommodated in one of the carriers 20 placed on the upper placement shelf 11.
  • an empty carrier 20 is placed on one of the lower placement shelves 12! /, (See FIG. 8A).
  • the lid 23 of the carrier 20 that accommodates the 25 wafers W placed on the upper placement shelf 11 is opened by the lid opening / closing device 25.
  • the sensor 26 detects the accommodation state of the wafer W in the carrier 20, for example, the number of sheets, the horizontal posture, and the like, and transmits the detection signal to the control unit 60.
  • the transfer arm C is operated by the control signal from the control unit 60, the wafer W is unloaded from the carrier 20, and is transferred to the transfer stage TRS 2 of the measurement station S5 adjacent to the carrier station S1.
  • the wafer W transferred to the transfer stage TRS2 is transferred by the transfer arm D to the transfer stage TRS1 of the processing station S2, and then transferred to the hydrophobization unit ADH by the main arm A2 and subjected to a hydrophobic treatment.
  • the wafer W is hydrophobized and then temporarily stored in the shelf unit U5, taken out of the shelf unit U5 by the main arm A2, and transferred to the coating unit 32 to form a resist film in the coating unit 32. .
  • the wafer W on which the resist film is formed is transferred to the heating unit (CLHP) by the main arm A2, and subjected to a pre-beta (PAB) for evaporating the solvent from the resist film.
  • PAB pre-beta
  • the wafer W is transferred to a peripheral edge exposure apparatus (WEE), subjected to a peripheral exposure process, and then subjected to a heating process.
  • the wafer W is transferred to the exposure apparatus S4 by the interface arm E, where a predetermined exposure process is performed.
  • the wafer W after the exposure processing is transferred by the interface arm E to the delivery stage TRS3 of the shelf unit U6 in order to deliver the wafer W to the DEV layer B2, and the wafer W on the stage TRS3 is transferred to the DEV layer.
  • the main arm A1 After being received by the main arm A1 of B2 and first subjected to post-exposure beta processing by the heating unit (PEB) in the DEV layer B2, the main arm A1 applies a cooling plate (not shown) to the shelf unit U6. It is transported and adjusted to a predetermined temperature.
  • the wafer W is taken out from the shelf unit U6 by the main arm A1 and transferred to the developing unit 31, where a developing solution is applied. Thereafter, the main arm A1 transports it to the heating unit (POST), where a predetermined development process is performed.
  • POST heating unit
  • the developed wafer W is transferred to the delivery stage TRS 1 of the shelf unit U5, and the wafer W on the stage TRS1 is received by the transfer arm D of the measurement station S5 to measure the line width of the measurement station S5.
  • the line width of the pattern formed on the wafer W after being transferred to the apparatus 90 is measured.
  • the measurement information of the line width is transmitted to the control unit 60 and stored in the control unit 60.
  • the wafer W on which the line width has been measured is taken out from the line width measuring device 90 by the transfer arm D, and then transferred to the delivery stage TRS1 of the processing station S2, and the wafer W of the stage TR S 1 Is received by the main arm A2 of the processing station S2, transferred to the cleaning unit (SCR), and subjected to the cleaning process.
  • SCR cleaning unit
  • the wafer W that has undergone a series of lithographic processes as described above is transferred to the empty carrier 20 placed on the lower placement shelf 12 of the carrier station S 1 by the transfer farm C. (See Figure 8B).
  • the mapping sensor 26 detects the accommodation state of the wafer W, and the detection signal is transmitted to the control unit 60, and the control from the control unit 60 is performed. Based on the signal, the lid opening / closing device 25 operates to close the lid 23 of the carrier 20.
  • the moving mechanism 16 operates and the lower mounting shelf 12 on which the carrier 20 containing 12 wafers W is placed is connected to the upper mounting shelf 11 and It is moved to an outside position where it does not interfere (see Figure 8C).
  • the carrier 20 placed on the lower placement shelf 12 moved to the outer position is transported to the carrier stock unit 13 by the carrier lifter 14.
  • a new empty carrier 20 disposed in the carrier stock section 13 is transported and placed by the carrier lifter 14 (see FIG. See 8D). Thereafter, the lower mounting shelf 12 on which the moving mechanism 16 is activated to place the carrier 20 is moved to a position close to the carry-in port 19b of the carrier station S1 (see FIG. 8E). After the remaining 13 processed wafers W are accommodated in the empty carrier 20, the mapping sensor 26 detects the accommodated state of the wafers W in the carrier 20, for example, 13 and the lid opening / closing device 25 The lid 23 is closed.
  • the moving mechanism 16 is operated, and the lower mounting shelf 12 on which the carrier 20 containing 13 wafers W is placed is moved to an outer position where it does not interfere with the upper mounting shelf 11.
  • the carrier lifter 14 transports the carrier stock 13 to the carrier stock unit 13.
  • the force described for the case where the first lithographic process is performed is the carrier 20 that accommodates the wafer W that has been subjected to the first lithographic process. Place it on the shelf 11 and repeat the same lithographic process as above.
  • the pattern formed on the wafer w can be miniaturized. That is, the wafer W that has been subjected to the first lithographic process and the etching process is subjected to the resist coating process (COT) ⁇ the pre-beta (PAB) ⁇ the peripheral exposure process (WEE) ⁇ the heating process (BAK E) as described above.
  • COT resist coating process
  • PAB pre-beta
  • WEE peripheral exposure process
  • BAK E heating process
  • the second lithographic process measurement information measured by the line width measuring device 90 after the first etching process is transmitted from the control unit 60 to the exposure device S4 and the heating unit (PEB). Based on the measurement information of the line width of the pattern, exposure correction such as exposure position, exposure amount and exposure focus in the second and subsequent exposure processes, heating in the heating process of the heating unit (PEB) after exposure Temperature correction such as temperature and heating time can be performed. As a result, the pattern formed on the wafer W can be miniaturized.
  • the wafer W that has been subjected to the second lithographic process is transferred to the line width measuring device 90 of the measurement station S5, where the line width of the pattern is measured and impurities adhering to the surface of the wafer W are measured. Particles are measured (CDM / MCRO).
  • This measurement information is also transmitted to the control unit 60, and the shape and pitch of the line width formed on the wafer W and the state of impurities and particles adhering to the wafer W can be confirmed.
  • the wafer W that has been subjected to the second lithographic process as described above is transferred to the carrier 20 mounted on, for example, the lower mounting shelf 12 of the carrier station S 1 by the transfer farm C. Returned and the process ends.
  • the resist coating-developing apparatus is also used when the antireflection film is formed below or above the resist film. The same can be applied.
  • the carrier mounting unit 10 includes the two mounting shelves 11 and 12
  • the carrier mounting unit 10 may include three or more mounting shelves.
  • the mounting shelf located in the lower stage is formed so as to be movable to an outer position that does not interfere with the mounting shelf located in the upper stage, and the carrier 20 is delivered as described above.
  • the number of carriers can be increased without unnecessarily increasing the size of an apparatus used for manufacturing a semiconductor device, and the substrate can be processed at high speed and in a small lot.
  • a conveyance processing apparatus can be provided.

Abstract

Substrate carrying equipment comprises a carrier station for carrying in or carrying out a carrier containing a wafer, a processing station, and a carrying means of wafer. The carrier station comprises a carrier mounting section having shelves at a plurality of levels for mounting the carriers, a carrier stock section, a carrier lifter for delivering the carrier between the carrier mounting section and the carrier stock section, and a transfer arm which carries in or carries out a wafer for the carrier at the carrier mounting section. The lower mounting shelf at the carrier mounting section is moved by a moving mechanism to a position below the upper mounting shelf or to an outer position not interfering in the vertical direction for the upper mounting shelf. The lower mounting shelf delivers the carrier to the lower mounting shelf at the outer position by means of the carrier lifter.

Description

明 細 書  Specification
基板搬送処理装置  Substrate transfer processing equipment
技術分野  Technical field
[0001] 本発明は、基板搬送処理装置に関するものである。  [0001] The present invention relates to a substrate transfer processing apparatus.
背景技術  Background art
[0002] 一般に、半導体デバイスの製造においては、半導体ウェハや LCDガラス基板等の 基板の上に ITO (Indium Tin Oxide)の薄膜や電極パターンを形成するために、フォト リソグラフィ技術が利用されている。このフォトリソグラフィ技術においては、基板にフ オトレジストを塗布し、これにより形成されたレジスト膜を所定の回路パターンに応じて 露光し、この露光パターンを現像処理することによりレジスト膜に所望の回路パターン を形成する、一連の工程によって行われている。  In general, in the manufacture of semiconductor devices, a photolithography technique is used to form an ITO (Indium Tin Oxide) thin film or an electrode pattern on a substrate such as a semiconductor wafer or an LCD glass substrate. In this photolithography technique, a photoresist is applied to a substrate, a resist film formed thereby is exposed in accordance with a predetermined circuit pattern, and this exposure pattern is developed to form a desired circuit pattern on the resist film. It is performed by a series of steps to form.
[0003] このような処理は、一般に基板を収容したキャリア(FOUP)から搬出された基板を 処理部に搬送して、レジスト塗布処理、レジスト塗布処理後の加熱処理、露光処理、 露光後の加熱処理及び現像処理等を行った後、処理済みの基板をキャリア内に収 容して処理を終了する基板搬送処理装置が知られている(例えば、特許文献 1参照) [0003] In general, such processing is performed by transporting a substrate unloaded from a carrier (FOUP) containing a substrate to a processing unit, and performing resist coating processing, heat processing after resist coating processing, exposure processing, and heating after exposure. 2. Description of the Related Art A substrate transfer processing apparatus that stores a processed substrate in a carrier and finishes processing after performing processing, development processing, and the like is known (for example, see Patent Document 1).
Yes
[0004] 上記処理装置において、処理効率を上げるために、複数例えば 4、 5個のキャリア をキャリアステーションに並列載置しておき、所定のキャリア内から基板を搬出し、空 のキャリア内に収容して、連続処理を行っている。  [0004] In the above processing apparatus, in order to increase processing efficiency, a plurality of, for example, four or five carriers are placed in parallel on a carrier station, a substrate is unloaded from a predetermined carrier, and accommodated in an empty carrier. Thus, continuous processing is performed.
[0005] また、キャリアステーションに対するキャリアの入替作業を迅速に行えるようにするた めに、キャリアステーションの上方等にキャリアストック部を設けた構造のものが知られ て!/、る(例えば、特許文献 2参照)。 [0005] In addition, there is a known structure in which a carrier stock part is provided above the carrier station so that the carrier can be quickly replaced with the carrier station! Reference 2).
特許文献 1 :特開 2003— 218018号公報  Patent Document 1: Japanese Patent Laid-Open No. 2003-218018
特許文献 2:特開 2002— 134588号公報  Patent Document 2: Japanese Patent Laid-Open No. 2002-134588
発明の開示  Disclosure of the invention
発明が解決しょうとする課題  Problems to be solved by the invention
[0006] ところで、近年の半導体デバイスの微細高集積化に伴って基板が大口径化してき ており、また、基板の高速処理化や処理の多重化(例えば、リソグラフイエ程を 2回用[0006] By the way, with the recent finer integration of semiconductor devices, the substrate diameter has increased. In addition, high-speed processing of substrates and multiplexing of processing (for example, lithographic process is used twice)
V、るマルチパターユング技術に必要な検査機モジュールのインライン化)に伴う少ロ ット処理等によりキャリア数の増加が要求されてレ、る。 V, an increase in the number of carriers is required due to the small lot processing associated with the inline inspection machine module required for multi-patterning technology.
[0007] しかしながら、現状の処理装置においては、キャリアステーションに載置できるキヤリ ァ数ゃ面積には限界があるため、特にキャリア数を大幅に増やすことは困難であり、 基板の高速処理化が図れな!/、と!/、う問題がある。  However, in the current processing apparatus, since the number of carriers that can be placed on the carrier station is limited, it is particularly difficult to increase the number of carriers significantly, and high-speed processing of the substrate can be achieved. There is a problem!
[0008] 上記問題を解決する手段として、キャリアを多段に載置してキャリア数を増やすこと が考えられる力 この構造ではキャリアステーションに対するキャリアの入替作業に多 くの時間を要し、基板の高速処理化が図れな!/、と!/、う懸念がある。 [0008] As a means to solve the above problem, it is possible to increase the number of carriers by placing carriers in multiple stages. In this structure, it takes a lot of time to replace the carrier with the carrier station, and the high speed of the substrate There is a concern that it cannot be processed!
[0009] 本発明は上述の問題に鑑みてなされたものであり、装置を必要以上に大型化する ことなく、キャリア数を増加でき、基板の高速処理化及び少ロット処理を可能にした基 板搬送処理装置を提供することを課題とする。 [0009] The present invention has been made in view of the above-mentioned problems, and can increase the number of carriers without increasing the size of the apparatus more than necessary, enabling a high-speed substrate processing and a small lot processing. It is an object to provide a transfer processing device.
課題を解決するための手段  Means for solving the problem
[0010] 上記の課題を解決するために、本発明の基板搬送処理装置は、被処理基板を収 容するキャリアを搬入出するキャリアステーションと、被処理基板に各種処理を施す 処理ユニットを配置する処理ステーションと、前記キャリアステーションと処理ステーシ ヨンとの間で被処理基板を受け渡しする搬送手段とを備える基板搬送処理装置であ つて、前記キャリアステーションは、複数のキャリアが載置可能な複数段の載置棚を 有するキャリア載置部と、このキャリア載置部の上方に位置するキャリアストック部と、 前記キャリア載置部とキャリアストック部との間でキャリアを受け渡しするキャリア受渡 し手段と、前記キヤリァ載置部に搬入されたキャリアに対して被処理基板を搬出入す る基板搬出入手段とを備え、前記キャリア載置部における下段に位置する載置棚は 、移動機構によって上段の載置棚に対して、前記上段の載置棚の下方位置と、鉛直 方向に干渉しない外方位置に移動可能に形成され、かつ、外方位置にある載置棚 に対して前記キャリア受渡し手段がキャリアを受け渡し可能に形成されることを特徴と する。 [0010] In order to solve the above-described problems, a substrate transfer processing apparatus of the present invention includes a carrier station that loads and unloads a carrier that accommodates a substrate to be processed, and a processing unit that performs various types of processing on the substrate to be processed. A substrate transfer processing apparatus comprising: a processing station; and a transfer means for transferring a substrate to be processed between the carrier station and the processing station, wherein the carrier station has a plurality of stages on which a plurality of carriers can be placed. A carrier mounting section having a mounting shelf; a carrier stock section positioned above the carrier mounting section; and carrier delivery means for delivering a carrier between the carrier mounting section and the carrier stock section; Substrate carrier loading / unloading means for loading / unloading a substrate to be processed with respect to the carrier loaded into the carrier loading portion. The lower mounting shelf is formed so as to be movable with respect to the upper mounting shelf by the moving mechanism to a position below the upper mounting shelf and an outer position that does not interfere in the vertical direction. The carrier delivery means is formed so as to be able to deliver a carrier to a mounting shelf in an outward position.
[0011] この構成によれば、キャリアステーションに設けられた複数段の載置棚上に複数の キャリアを載置することができ、下段に位置する載置棚を上段の載置棚に干渉しない 外方位置に移動した状態で、前記載置棚に対してキャリアストック部との間でキャリア を受け渡しすること力でさる。 [0011] According to this configuration, a plurality of carriers can be placed on a plurality of placement shelves provided in the carrier station, and the placement shelf located in the lower stage does not interfere with the upper placement shelf. This is the force to deliver the carrier to and from the carrier stock section with respect to the shelf described above while moving to the outward position.
[0012] また、上記の基板搬送処理装置は、前記キャリア内に収容される被処理基板の収 容状態を検出する基板検出手段と、前記基板検出手段によって検出された検出信 号を受けて、前記キャリア内に収容される被処理基板が所定数の状態になった際に 、キャリア受渡し手段及び載置棚の移動機構に作動信号を伝達する制御手段とを更 に備えるように構成することができる。  [0012] Further, the substrate transfer processing apparatus receives a detection signal detected by the substrate detection means and a substrate detection means for detecting a storage state of the substrate to be processed accommodated in the carrier, When the substrate to be processed accommodated in the carrier is in a predetermined number of states, it is configured to further comprise a carrier delivery means and a control means for transmitting an operation signal to the moving mechanism of the mounting shelf. it can.
[0013] この構成によれば、下段の載置棚に載置されたキャリア内に処理済みの被処理基 板が収容されると、収容された状態を基板検知手段が検出し、その検出信号を制御 手段に伝達してキャリア内の被処理基板の収容状態(枚数)を認識すること力 Sできる。 そして、キャリア内の被処理基板の収容状態(枚数)が、予め設定した所定の状態( 枚数)に達した際に、制御手段からの制御信号に基づいて下段の載置棚が上段の 載置棚と干渉しない外方位置に移動し、キャリア受渡し手段によってキャリアストック 部に搬送し、キャリアストック部から別のキャリアを空いた載置棚上に受け渡した後、 載置棚が元の位置に移動して、後続の処理済みの被処理基板を収納可能な状態に すること力 Sでさる。  [0013] According to this configuration, when the processed substrate is accommodated in the carrier placed on the lower placement shelf, the substrate detection means detects the accommodated state, and the detection signal Can be transmitted to the control means to recognize the accommodation state (number of substrates) of the substrate to be processed in the carrier. When the accommodation state (number) of the substrates to be processed in the carrier reaches a predetermined state (number) set in advance, the lower placement shelf is placed on the upper placement based on the control signal from the control means. Move to the outside position where it does not interfere with the shelf, transport it to the carrier stock section by the carrier delivery means, transfer another carrier from the carrier stock section to the empty placement shelf, and then move the placement shelf to the original position Then, the force S is used to make the subsequent processed substrate ready for storage.
[0014] また、上記の基板搬送処理装置は、下段に位置する前記載置棚が、 1個のキャリア を独立して載置すると共に、上段の載置棚の下方位置と外方位置に独立して移動可 能な複数の棚体を有するように構成することができる。  [0014] In addition, in the above-described substrate transfer processing apparatus, the placement shelf located in the lower stage places one carrier independently, and is independent of the lower position and the outward position of the upper placement shelf. Thus, it can be configured to have a plurality of movable shelves.
[0015] この構成によれば、載置棚とキャリアストック部との間で各キャリア毎に受け渡しを行 うこと力 Sでさる。  [0015] According to this configuration, the force S is used to deliver each carrier between the mounting shelf and the carrier stock unit.
[0016] さらに、上記の基板搬送処理装置は、前記キャリアが、複数の被処理基板を収容 する収容容器と、前記収容容器の開口部を開放及び閉塞する蓋体とを備え、前記キ ャリアステーションが、前記蓋体の開放及び閉塞を行う蓋開閉装置を備え、前記蓋開 閉装置が、各段の載置棚に載置されるキャリアに対して昇降可能に形成されると共 に、蓋体の開放時には、上下段の載置棚に干渉しない位置に蓋体を開放するように 形成されるように構成すること力 Sでさる。  [0016] Further, in the substrate transfer processing apparatus, the carrier includes a storage container that stores a plurality of substrates to be processed, and a lid that opens and closes an opening of the storage container. The station includes a lid opening / closing device that opens and closes the lid, and the lid opening / closing device is formed so as to be movable up and down with respect to the carrier placed on each stage mounting shelf. When the lid is opened, the force S can be configured so that the lid is opened at a position that does not interfere with the upper and lower placement shelves.
[0017] この構成によれば、各段の載置棚に載置されたキャリアに設けられた蓋体を開閉し てキャリアに対する被処理基板の搬出入を可能にすることができる。この際、隣接す る段の載置棚に載置されたキャリアに対する被処理基板の搬出入に支障をきたすこ とがない。 [0017] According to this configuration, the lid provided on the carrier placed on the placement shelf of each stage is opened and closed. Thus, the substrate to be processed can be carried in and out of the carrier. At this time, there is no hindrance to loading / unloading of the substrate to be processed with respect to the carrier mounted on the mounting shelf at the adjacent stage.
発明の効果  The invention's effect
[0018] 本発明の基板搬送処理装置によれば、複数段の載置棚上に複数のキャリアを載置 すること力 Sでき、下段に位置する載置棚を上段の載置棚に干渉しない外方位置に移 動した状態で、前記載置棚に対してキャリアストック部との間でキャリアを受け渡しす ることができるので、装置を必要以上に大型化することなくキャリアの数を増加するこ とができると共に、基板の高速処理化及び処理の多重化(例えば、リソグラフイエ程を 2回用いるマルチパターユング技術に必要な検査機モジュールのインライン化)に伴 ぅ少ロット処理を行うことができる。  [0018] According to the substrate transfer processing apparatus of the present invention, the force S for placing a plurality of carriers on a plurality of stages of mounting shelves can be achieved, and the mounting shelves positioned at the lower stage do not interfere with the upper stage mounting shelves. Since the carrier can be transferred to and from the carrier stock section with respect to the mounting shelf while moving to the outward position, the number of carriers can be increased without increasing the size of the device more than necessary. In addition to high-speed processing of substrates and multiplexing of processing (for example, in-line inspection machine modules required for multi-patterning technology that uses lithographic processes twice) it can.
図面の簡単な説明  Brief Description of Drawings
[0019] [図 1]本発明に係る基板搬送処理装置を備えるレジスト塗布 ·現像処理装置の一例を 示す概略斜視図である。  FIG. 1 is a schematic perspective view showing an example of a resist coating / developing apparatus provided with a substrate transfer processing apparatus according to the present invention.
[図 2]前記レジスト塗布 ·現像処理装置の概略平面図である。  FIG. 2 is a schematic plan view of the resist coating / developing apparatus.
[図 3]本発明におけるキャリアステーションを示す概略側面図である。  FIG. 3 is a schematic side view showing a carrier station in the present invention.
[図 4A]本発明におけるキャリアの構成を示す斜視図である。  FIG. 4A is a perspective view showing a configuration of a carrier in the present invention.
[図 4B]本発明におけるキャリアの構成を示す横断面図である。  FIG. 4B is a transverse sectional view showing the structure of the carrier in the present invention.
[図 5A]本発明における蓋体開閉装置によるキャリア蓋体の異なる開放状態を示す側 面図である。  FIG. 5A is a side view showing different open states of the carrier lid by the lid opening / closing device according to the present invention.
[図 5B]本発明における蓋体開閉装置によるキャリア蓋体の異なる開放状態を示す側 面図である。  FIG. 5B is a side view showing different open states of the carrier lid by the lid opening / closing device according to the present invention.
[図 6]本発明における処理ステーションを示す概略側面図である。  FIG. 6 is a schematic side view showing a processing station in the present invention.
[図 7]本発明における測定装置を示す概略側面図である。  FIG. 7 is a schematic side view showing a measuring apparatus according to the present invention.
[図 8A]キャリアステーションにおけるキャリアの搬入出及びウェハの搬出入の動作の 一例を示す概略側面図である。  FIG. 8A is a schematic side view showing an example of carrier loading / unloading operations and wafer loading / unloading operations at a carrier station.
[図 8B]キャリアステーションにおけるキャリアの搬入出及びウェハの搬出入の動作の 一例を示す概略側面図である。 [図 8C]キャリアステーションにおけるキャリアの搬入出及びウェハの搬出入の動作の 一例を示す概略側面図である。 FIG. 8B is a schematic side view showing an example of carrier loading / unloading operations and wafer loading / unloading operations at the carrier station. FIG. 8C is a schematic side view showing an example of carrier loading / unloading operations and wafer loading / unloading operations at the carrier station.
[図 8D]キャリアステーションにおけるキャリアの搬入出及びウェハの搬出入の動作の 一例を示す概略側面図である。  FIG. 8D is a schematic side view showing an example of carrier loading / unloading operations and wafer loading / unloading operations at the carrier station.
[図 8E]キャリアステーションにおけるキャリアの搬入出及びウェハの搬出入の動作の 一例を示す概略側面図である。  FIG. 8E is a schematic side view showing an example of carrier loading / unloading operations and wafer loading / unloading operations at the carrier station.
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0020] 以下、図面を用いて本発明の実施形態に係る基板搬送処理装置を説明する。ここ では、本発明に係る基板搬送処理装置を半導体ウェハのレジスト塗布'現像処理装 置に適用した場合について説明する。  Hereinafter, a substrate transfer processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. Here, a case where the substrate transfer processing apparatus according to the present invention is applied to a semiconductor wafer resist coating and developing apparatus will be described.
[0021] 図 1は、本発明の基板搬送処理装置の一実施形態としてのレジスト塗布 ·現像処理 装置の構成を示す概略斜視図である。図 2は、図 1のレジスト塗布'現像処理装置の 構成を示す平面図である。  FIG. 1 is a schematic perspective view showing the configuration of a resist coating / developing apparatus as an embodiment of a substrate transfer processing apparatus of the present invention. FIG. 2 is a plan view showing the configuration of the resist coating and developing apparatus shown in FIG.
[0022] このレジスト塗布 ·現像処理装置は、被処理基板である半導体ウェハ W (以下にゥ ェハ Wという)が例えば 25枚密閉収容されたキャリア 20 (FOUP)を搬入出するため のキャリアステーション S1と、複数個例えば 4個の単位ブロック B1〜B4を縦に配列し て構成された処理ステーション S2と、露光装置 S4との間でウェハ Wを受け渡しする インターフェース部 S3と、キャリアステーション S1と処理ステーション S2との間に介在 される測定ステーション S 5とを備えている。  [0022] This resist coating / development processing apparatus is a carrier station for carrying in / out a carrier 20 (FOUP) in which, for example, 25 semiconductor wafers W (hereinafter referred to as wafers W) are hermetically contained. Interface unit S3 that transfers wafer W between exposure station S4 and processing station S2 configured by vertically arranging S1 and a plurality of unit blocks B1 to B4, for example, four unit blocks B1 to B4, and processing with carrier station S1 And a measuring station S 5 interposed between the stations S 2.
[0023] 上記のキャリアステーション S1は、それぞれ複数例えば 8個のキャリア 20が載置可 能な複数段例えば 2段の載置棚 11、 12を有するキャリア載置部 10と、このキャリア載 置部 10の上方に位置するキャリアストック部 13と、キャリア載置部 10とキャリアストック 部 13との間でキャリア 20を受け渡しするキャリア受渡し手段であるキャリアリフタ 14と 、キャリア載置部 10に搬入 (載置)されたキャリア 20に対してウェハ Wを搬出入する 基板搬出入手段であるトランスファーアーム Cとを備えている。  [0023] Each of the carrier stations S1 includes a carrier mounting unit 10 having a plurality of, for example, two mounting shelves 11, 12 on which a plurality of, for example, eight carriers 20 can be mounted, and the carrier mounting unit. The carrier stock unit 13 located above 10, the carrier lifter 14 that is a carrier delivery means for delivering the carrier 20 between the carrier mounting unit 10 and the carrier stock unit 13, and the carrier mounting unit 10 (loading) And a transfer arm C as a substrate loading / unloading means for loading / unloading the wafer W to / from the carrier 20 placed on the carrier 20.
[0024] この場合、キャリア 20は、図 4Aと図 4Bに示すように、一側に開口部 21を有し内壁 に複数枚 (例えば 25枚)のウェハ Wが適宜間隔をお!/、て水平状態に保持される保持 溝(図示せず)を有する収容容器 22と、この収容容器 22の開口部 21を開放及び閉 塞する蓋体 23とを備えており、蓋体 23内に組み込まれた係脱機構 24を蓋開閉装置 25によって操作することにより、蓋体 23が開放及び閉塞されるように構成されている In this case, as shown in FIGS. 4A and 4B, the carrier 20 has an opening 21 on one side and a plurality of (for example, 25) wafers W on the inner wall with an appropriate interval! / The storage container 22 having a holding groove (not shown) that is held in a horizontal state, and the opening 21 of the storage container 22 is opened and closed. And the lid 23 is opened and closed by operating the engagement / disengagement mechanism 24 incorporated in the lid 23 with the lid opening / closing device 25.
[0025] また、キャリア 20内に収容されているウェハ Wの状態例えば枚数やウェハ Wの姿 勢等は、基板検出手段であるマッピングセンサ 26によって検出され、その検出信号 は制御手段である制御部 60に伝達され、制御部 60からの制御信号によって、前記 ウェハリフタ 14、前記キャリアストック部 13内に配設されるキャリア搬送ロボット 15、蓋 開閉装置 25、トランスファーアーム C及び後述する移動機構 16等が作動するように 形成されている。 In addition, the state of the wafer W accommodated in the carrier 20, for example, the number of wafers and the posture of the wafer W are detected by the mapping sensor 26 which is a substrate detection unit, and the detection signal is a control unit which is a control unit. In response to a control signal from the control unit 60, the wafer lifter 14, the carrier transfer robot 15 disposed in the carrier stock unit 13, the lid opening / closing device 25, the transfer arm C, the moving mechanism 16 described later, etc. It is configured to work.
[0026] 上記のキャリア載置部 10における下段に位置する下部載置棚 12は、 1個のキヤリ ァ 20を独立して載置可能な複数例えば 4個の棚体 12aにて形成されている。各棚体 12aは、例えばエアシリンダ、ボールねじ機構、タイミングベルト等にて形成される移 動機構 16によって上段の上部載置棚 11に対して、上部載置棚 11の下方位置と、鉛 直方向に干渉しな!/、外方位置に移動可能に構成されてレ、る。  [0026] The lower mounting shelf 12 located in the lower stage of the carrier mounting portion 10 is formed of a plurality of, for example, four shelf bodies 12a on which one carrier 20 can be mounted independently. . Each shelf 12a has a lower position of the upper mounting shelf 11 with respect to the upper mounting shelf 11 by a moving mechanism 16 formed by, for example, an air cylinder, a ball screw mechanism, a timing belt, etc. It does not interfere with the direction! /, It is configured to be movable to the outside position.
[0027] なお、上部載置棚 11及び下部載置棚 12には、各キャリア 20を載置するキャリア載 置台 27が設けられている。このキャリア載置台 27は、後述するウェハ搬出口 19a、ゥ ェハ搬入口 19bに対して接離移動可能に形成されている。  It should be noted that a carrier mounting table 27 on which each carrier 20 is mounted is provided on the upper mounting shelf 11 and the lower mounting shelf 12. The carrier mounting table 27 is formed to be movable toward and away from a wafer carry-out port 19a and a wafer carry-in port 19b, which will be described later.
[0028] 前記キャリアストック部 13には、水平の X Y方向及び鉛直の Z方向に移動可能な キャリア搬送ロボット 15が配設されており、このキャリア搬送ロボット 15によって複数の キャリア 20がキャリアストック部 13内に整列配置されるようになっている。なお、キヤリ ァストック部 13には、ウェハ Wを収容したキャリア 20や空の状態のキャリア 20等が配 置されている。  The carrier stock unit 13 is provided with a carrier transport robot 15 that can move in the horizontal XY direction and the vertical Z direction. By this carrier transport robot 15, a plurality of carriers 20 are transferred to the carrier stock unit 13. It is arranged in the inside. The carrier stock unit 13 is provided with a carrier 20 containing the wafer W, an empty carrier 20 and the like.
[0029] また、キャリアリフタ 14は、水平の X Y方向及び鉛直の Z方向に移動可能に形成さ れると共に、キャリア搬送ロボット 15との間でキャリア 20の受け渡しが可能に構成され ている。このように構成されるキャリアリフタ 14によって、キャリアストック部 13内のキヤ リア 20をキャリア載置部 10 搬送、あるいは、キャリア載置部 10の上部載置棚 11 下部載置棚 12上に載置されているキャリア 20をキャリアストック部 13 搬送すること ができる。 [0030] なお、下部載置棚 12に対してキャリア 20を受け渡しする場合は、移動機構 16によ つて下部載置棚 12の棚体 12aを上部載置棚 11と鉛直方向に干渉しない外方位置 に移動した状態で、キャリアリフタ 14によってキャリア 20を受け渡しすることができる。 The carrier lifter 14 is formed to be movable in the horizontal XY direction and the vertical Z direction, and is configured to be able to transfer the carrier 20 to and from the carrier transport robot 15. With the carrier lifter 14 configured in this way, the carrier 20 in the carrier stock unit 13 is transported to the carrier mounting unit 10 or placed on the upper mounting shelf 11 of the carrier mounting unit 10. The carrier 20 can be transported by the carrier stock section 13. [0030] When the carrier 20 is delivered to the lower mounting shelf 12, the outer side which does not interfere with the upper mounting shelf 11 in the vertical direction with the shelf 12a of the lower mounting shelf 12 by the moving mechanism 16. The carrier 20 can be delivered by the carrier lifter 14 while moving to the position.
[0031] 上記のように構成することにより、上部載置棚 11及び下部載置棚 12に対してキヤリ ァ 20を円滑に受け渡しすることができ、装置を必要以上に大型化することなぐ多数 (例えば 8個)のキャリア 20をキャリア載置部 10に載置することができる。  [0031] By configuring as described above, the carrier 20 can be smoothly delivered to the upper mounting shelf 11 and the lower mounting shelf 12, and a large number of devices without increasing the size more than necessary ( For example, eight carriers 20 can be mounted on the carrier mounting portion 10.
[0032] 上記の蓋開閉装置 25は、図 5A又は図 5Bに示すように、キャリア 20の蓋体 23の係 脱機構 24に係合する係合ピン 25aと蓋体保持板 25bと、蓋体保持板 25bを鉛直方 向に移動する昇降機構 25cとを備えており、上部載置棚 11又は下部載置棚 12に載 置されるキャリア 20に対して昇降可能に形成されると共に、蓋体 23の開放時には、 上下段の載置棚 11、 12に載置されたキャリア 20に対するウェハ Wの搬出入のため の搬出口 19a、搬入口 19bに干渉しない位置に蓋体 23を開放するように形成されて いる。  As shown in FIG. 5A or 5B, the lid opening / closing device 25 includes an engagement pin 25a that engages with an engagement / disengagement mechanism 24 of the lid body 23 of the carrier 20, a lid body holding plate 25b, and a lid body. And an elevating mechanism 25c for moving the holding plate 25b in the vertical direction. The elevating mechanism 25c is formed to be movable up and down with respect to the carrier 20 mounted on the upper mounting shelf 11 or the lower mounting shelf 12, and the lid body. When opening 23, the lid 23 is opened to a position that does not interfere with the loading / unloading port 19a and loading / unloading port 19b for loading / unloading the wafer W to / from the carriers 20 mounted on the upper and lower loading shelves 11 and 12. Is formed.
[0033] 例えば、図 5Aに示すように、下部載置棚 12は、上部載置棚 11上のキャリア 20に 対するウェハ Wの搬出入に支障をきたさない下方側に蓋体 23を開放するように構成 されている。また、図 5Bに示すように、上部載置棚 11は、下部載置棚 12上のキヤリ ァ 20に対するウェハ Wの搬出入に支障をきたさない上方側に蓋体 23を開放するよう に構成されている。したがって、各キャリア 20に対するウェハ Wの搬出入を円滑にす ること力 Sでき、スループットの向上が図れる。  For example, as shown in FIG. 5A, the lower mounting shelf 12 opens the lid 23 on the lower side that does not interfere with the loading / unloading of the wafer W with respect to the carrier 20 on the upper mounting shelf 11. Is configured. Further, as shown in FIG. 5B, the upper mounting shelf 11 is configured to open the lid 23 on the upper side that does not hinder the loading / unloading of the wafer W with respect to the carrier 20 on the lower mounting shelf 12. ing. Accordingly, it is possible to smoothly carry in and out the wafer W with respect to each carrier 20, and the throughput can be improved.
[0034] なお、キャリア載置部 10と、前記マッピングセンサ 26、蓋開閉装置 25及びトランス ファーアーム Cを備える室 17とを区画する壁部 18には、ウェハ Wの搬出口 19a及び 搬入口 19bが設けられている。例えば、上部載置棚 11が近接する壁部 18には、ゥェ ハ Wの搬出口 19aが設けられ、下部載置棚 12が近接する位置には、ウェハ Wの搬 入口 19bが設けられて!/、る(図 1参照)。  [0034] It should be noted that the wall W 18 that divides the carrier mounting section 10 and the chamber 17 including the mapping sensor 26, the lid opening / closing device 25, and the transfer arm C has a wafer W carry-out port 19a and a carry-in port 19b. Is provided. For example, a wafer exit 18a for wafer W is provided in the wall 18 where the upper mounting shelf 11 is close, and a wafer entrance 19b for wafer W is provided in a position where the lower mounting shelf 12 is close. ! /, Ru (see Figure 1).
[0035] キャリアステーション S1の奥側には測定ステーション S5を介して接続され、筐体 70 にて周囲を囲まれる処理ステーション S2が接続されている。処理ステーション S2は、 この例では、下方側から、レジスト液や現像液等の薬液容器類を収納する第 1の単位 ブロック(CHM) B1、現像処理を行うための第 2の単位ブロック(DEV層) B2、 2段の レジスト液の塗布処理を行うための塗布膜形成用単位ブロック及び洗浄処理を行う 洗浄単位ブロックである第 3、第 4の単位ブロック(COT層) B3、 B4として害 ijり当てら れている。なお、この場合、塗布膜形成用単位ブロックの一つ例えば第 3の単位プロ ック(COT層) B3を、レジスト膜の下層側に形成される反射防止膜の形成処理を行う ための単位ブロック(BCT層)としてもよい。また、更に第 4の単位ブロック(COT層) B 4の上段に、レジスト膜の上層側に形成される反射防止膜の形成処理を行うための 反射防止膜形成用単位ブロックを設けるようにしてもよい。 [0035] A processing station S2, which is connected to the back side of the carrier station S1 via a measurement station S5 and is surrounded by a casing 70, is connected. In this example, the processing station S2 includes, from the lower side, a first unit block (CHM) B1 for storing chemical liquid containers such as a resist solution and a developing solution, and a second unit block (DEV layer for performing a developing process). ) B2, 2-stage The coating film forming unit block for performing the resist solution coating process and the third and fourth unit blocks (COT layers) B3 and B4 which are the cleaning unit blocks for performing the cleaning process are hit ij. In this case, one of the unit blocks for forming the coating film, for example, the third unit block (COT layer) B3 is a unit block for performing an antireflection film forming process formed on the lower layer side of the resist film. (BCT layer) may be used. Further, a unit block for forming an antireflection film for performing an antireflection film forming process formed on the upper layer side of the resist film may be provided on the upper stage of the fourth unit block (COT layer) B4. Good.
[0036] 第 2〜第 4の単位ブロック B2〜B4は、前面側に配設され、ウェハ Wに対して薬液を 塗布するための液処理ユニットと、背面側に配設され、前記液処理ユニットにて行な われる処理の前処理及び後処理を行なうための各種の加熱ユニット等の処理ュニッ トと、前面側に配設される前記液処理ユニットと背面側に配設される加熱ユニット等の 処理ユニットとの間、具体的には下段に現像処理部を配置し、上段にレジスト処理部 を配置した液処理ユニットと加熱ユニット等の処理ユニットとの間でウェハ Wの受け渡 しを行うための専用の基板搬送手段であるメインアーム A1、A2とを備えている。  [0036] The second to fourth unit blocks B2 to B4 are disposed on the front surface side, and are disposed on the rear surface side with a liquid processing unit for applying a chemical solution to the wafer W, and the liquid processing unit. Processing units such as various heating units for pre-processing and post-processing of the processing performed in the above, the liquid processing unit disposed on the front side, the heating unit disposed on the back side, etc. In order to transfer wafer W between the processing unit, specifically the development processing unit at the lower level and the processing unit such as the heating unit and the processing unit with the resist processing unit at the upper level Main arms A1 and A2 which are dedicated substrate transfer means.
[0037] これら単位ブロック B2〜B4は、この例では、各単位ブロック B2〜B4の間で、上記 液処理ユニットと、加熱ユニット等の処理ユニットと、搬送手段との配置レイアウトが同 じに形成されている。ここで、配置レイアウトが同じであるとは、各処理ユニットにおけ るウェハ Wを載置する中心つまり液処理ユニットにおけるウェハ Wの保持手段である スピンチャックの中心や、加熱ユニットにおける加熱プレートや冷却プレートの中心が 同じという意味である。  [0037] In this example, the unit blocks B2 to B4 have the same layout layout of the liquid processing unit, the processing unit such as the heating unit, and the conveying means between the unit blocks B2 to B4. Has been. Here, the same arrangement layout means that the center of the wafer W in each processing unit, that is, the center of the spin chuck that is the means for holding the wafer W in the liquid processing unit, the heating plate or cooling in the heating unit, and so on. It means that the center of the plate is the same.
[0038] 上記の DEV層 B2は、図 2に示すように、 DEV層 B2のほぼ中央には、 DEV層 B2 の長さ方向(図中 Y方向)に、キャリアステーション S1側の測定ステーション S5とイン ターフェース部 S3とを接続するためのウェハ Wの搬送領域 R1 (メインアーム A1の水 平移動領域)が形成されている。また、 COT層 B3、 B4は、図示しないが、 DEV層 B 2と同様に、 COT層 B3、 B4のほぼ中央には、 COT層 B3、 B4の長さ方向(図中 Y方 向)に、キャリアステーション S1側とインターフェース部 S3とを接続するためのウェハ Wの搬送領域 R2 (メインアーム A2の水平移動領域)が形成されて!/、る。  [0038] As shown in FIG. 2, the above DEV layer B2 has a measuring station S5 on the carrier station S1 side in the length direction of the DEV layer B2 (Y direction in the figure) at the center of the DEV layer B2. A transfer area R1 of the wafer W for connecting the interface portion S3 (horizontal movement area of the main arm A1) is formed. COT layers B3 and B4 are not shown, but like DEV layer B2, COT layers B3 and B4 are almost centered in the length direction of COT layers B3 and B4 (in the Y direction in the figure). A transfer area R2 (horizontal movement area of the main arm A2) for the wafer W for connecting the carrier station S1 side and the interface section S3 is formed! /.
[0039] 上記の搬送領域 Rl (R2)のキャリアステーション S1側から見た両側には、手前側( キャリアステーション S I側)から奥側に向力、つて右側に、前記液処理ユニットとして、 現像処理を行うための複数個例えば 3個の現像処理部を備えた 1段の現像ユニット 3 1と、 2段の塗布ユニット 32及び洗浄ユニット(図示せず)が設けられている。各単位 ブロックは、手前側から奥側に向かって左側に、順に加熱系のユニットを多段化した 例えば 4個の棚ユニット Ul、 U2、 U3、 U4が設けられており、 DEV層 B2においては 現像ユニット 31にて行なわれる処理の前処理及び後処理を行なうための各種ュニッ トを複数段、例えば 3段ずつに積層した構成とされている。このようにして前記搬送領 域 R1によって現像ユニット 31と棚ユニット U1〜U4が区画されており、搬送領域 R1 に洗浄エアを噴出させて排気することにより、当該領域内のパーティクルの浮遊を抑 制するようになつている。 [0039] On both sides of the transfer area Rl (R2) viewed from the carrier station S1 side, the front side ( One-stage development unit 3 1 having a plurality of, for example, three development processing units for performing development processing on the right side as the liquid processing unit on the right side from the carrier station SI side), 2 A step coating unit 32 and a cleaning unit (not shown) are provided. Each unit block is provided with, for example, four shelf units Ul, U2, U3, and U4 in order from the front side to the left side. Various units for pre-processing and post-processing of the processing performed in the unit 31 are stacked in a plurality of stages, for example, three stages. In this way, the developing unit 31 and the shelf units U1 to U4 are partitioned by the transport region R1, and by ejecting the cleaning air to the transport region R1 and exhausting it, the floating of particles in the region is suppressed. It ’s going to be.
[0040] 上述の前処理及び後処理を行うための各種ユニットの中には、例えば図 6に示すよ うに、露光後のウェハ Wを加熱処理するポストェクスポージャーべ一キングユニットな どと呼ばれて!/、る加熱ユニット(PEB)や、現像処理後のウェハ Wの水分を飛ばすた めに加熱処理するポストべ一キングユニット等と呼ばれて!/、る加熱ユニット(POST) 等が含まれている。これら加熱ユニット(PEB、 POST)等の各処理ユニットは、それ ぞれ処理容器 40内に収容されており、棚ユニット U1〜U4は、前記処理容器 40が 3 段ずつ積層されて構成され、各処理容器の搬送領域 R1に臨む面にはウェハ搬出入 口 41が形成されている。なお、加熱ユニット(PEB、 POST)は、加熱温度や加熱時 間が調整可能に形成されている。  [0040] Among the various units for performing the above pre-processing and post-processing, as shown in FIG. 6, for example, a post-exposure baking unit that heat-processes the wafer W after exposure is called. It is called a heating unit (PEB) or a post-baking unit that heats the wafer W after development to remove moisture! /, A heating unit (POST), etc. It is. Each processing unit such as the heating unit (PEB, POST) is accommodated in the processing container 40, and the shelf units U1 to U4 are configured by stacking the processing containers 40 in three stages. A wafer loading / unloading port 41 is formed on the surface of the processing container facing the transfer region R1. The heating unit (PEB, POST) is formed so that the heating temperature and heating time can be adjusted.
[0041] 上記の搬送領域 R1には前記メインアーム A1が設けられている。このメインアーム A 1は、当該 DEV層 B2内の全てのモジュール(ウェハ Wが置かれる場所)、例えば棚 ユニット U1〜U4の各処理ユニット、現像ユニット 31の各部との間でウェハの受け渡 しを行うように構成されており、このために水平の X、 Y方向及び鉛直の Z方向に移動 自在、鉛直軸回りに回転自在に構成されている。  [0041] The transfer arm R1 is provided with the main arm A1. The main arm A 1 transfers wafers to and from all modules in the DEV layer B2 (where the wafer W is placed), for example, each processing unit of the shelf units U1 to U4 and each part of the developing unit 31. For this purpose, it can move in the horizontal X and Y directions and the vertical Z direction, and can rotate around the vertical axis.
[0042] なお、メインアーム Al (A2)は、同様に構成されており、メインアーム A1を代表して 説明すると、例えば図 2に示すように、ウェハ Wの裏面側周縁領域を支持するための 2本の湾曲アーム片 51を有するアーム本体 50を備えており、これら湾曲アーム片 51 は図示しなレ、基台に沿って互いに独立して進退自在に構成されてレ、る。またこの基 台は鉛直軸回りに回転自在に構成されると共に、 Y方向に移動自在、かつ昇降自在 に構成されている。このようにして湾曲アーム片 51は、 X方向に進退自在、 Y方向に 移動自在、昇降自在及び鉛直軸回りに回転自在に構成され、棚ユニット U1〜U4の 各ユニットやキャリアステーション S1側に配置された棚ユニット U5の受渡しステージ TRS1、液処理ユニットとの間でウェハ Wの受け渡しを行うことができるようになつてい る。このようなメインアーム A1は、制御部 60からの指令に基づいて図示しないコント口 ーラにより駆動が制御される。また、メインアーム Al (A2)の加熱ユニットでの蓄熱を 防止するために、ウェハ Wの受け取り順番をプログラムで任意に制御できるようにな つている。 Note that the main arm Al (A2) is configured in the same manner, and the main arm A1 will be described as a representative example. For example, as shown in FIG. An arm main body 50 having two curved arm pieces 51 is provided, and these curved arm pieces 51 are configured to be movable forward and backward independently of each other along a base (not shown). This base The stand is configured to be rotatable about the vertical axis, and is configured to be movable in the Y direction and movable up and down. In this way, the curved arm piece 51 is configured to be movable back and forth in the X direction, movable in the Y direction, freely movable up and down, and rotatable about the vertical axis, and is arranged on each unit of the shelf units U1 to U4 and on the carrier station S1 side. The wafer W can be transferred between the delivery unit TRS1 of the shelf unit U5 and the liquid processing unit. The driving of the main arm A1 is controlled by a controller (not shown) based on a command from the control unit 60. In addition, in order to prevent heat storage in the heating unit of the main arm Al (A2), the receiving order of the wafers W can be arbitrarily controlled by a program.
[0043] また、前記塗布膜形成用の単位ブロック B3、 B4は、いずれも同様に構成されてお り、上述の現像処理用の単位ブロック B2と同様に構成されている。具体的には、液 処理ユニットとしてウェハ Wに対してレジスト液の塗布処理を行うための塗布ユニット 32が設けられ、 COT層 B3、 B4の棚ユニット U1〜U4には、レジスト液塗布後のゥェ ハ Wを加熱処理する加熱ユニット(CLHP)や、レジスト液とウェハ Wとの密着性を向 上させるための疎水化処理ユニット(ADH)を備えており、 DEV層 B2と同様に構成 されている。すなわち、塗布ユニットと加熱ユニット(CLHP)及び疎水化処理ユニット (ADH)とをメインアーム A2の搬送領域 R2 (メインアーム A2の水平移動領域)によつ て区画するように構成されている。そして、この COT層 B3、 B4では、メインアーム A2 により、棚ユニット U5の受渡しステージ TRS1と、塗布ユニット 32と、棚ユニット U;!〜 U4の各処理ユニットと、に対してそれぞれウェハ Wの受け渡しが行われる。なお、上 記の疎水化処理ユニット(ADH)は、 HMDS雰囲気内でガス処理を行なうものであ る力 塗布膜形成用の単位ブロック B3、 B4のいずれかに設けられればよい。  [0043] The unit blocks B3 and B4 for coating film formation are both configured in the same manner, and are configured in the same manner as the unit block B2 for development processing described above. Specifically, a coating unit 32 for performing a resist solution coating process on the wafer W is provided as a liquid processing unit, and the shelf units U1 to U4 of the COT layers B3 and B4 are provided with a resist solution coating unit. Equipped with a heating unit (CLHP) that heats the wafer W and a hydrophobic treatment unit (ADH) that improves the adhesion between the resist solution and the wafer W, and is configured in the same way as the DEV layer B2. Yes. That is, the coating unit, the heating unit (CLHP), and the hydrophobizing unit (ADH) are configured to be divided by the transfer area R2 of the main arm A2 (horizontal movement area of the main arm A2). In the COT layers B3 and B4, the main arm A2 delivers the wafer W to the delivery unit TRS1 of the shelf unit U5, the coating unit 32, and the processing units of the shelf units U;! To U4. Is done. The hydrophobic treatment unit (ADH) described above may be provided in any one of the unit blocks B3 and B4 for forming a force coating film that performs gas treatment in an HMDS atmosphere.
[0044] また、処理ステーション S2に隣接して配置される測定ステーション S5は、キヤリアス テーシヨン S1と処理ステーション S2の筐体 70に接続する筐体 80を備え、この筐体 8 0内には、測定装置である線幅測定装置 90と、この線幅測定装置 90に対してウェハ Wを搬入 ·搬出する搬送手段である搬送アーム Dと受渡しステージ TRS2が配設され ている。この場合、搬送アーム Dは、測定ステーション S5内の受渡しステージ TRS2 との間、処理ステーション S2の受渡しステージ TRS1との間、及び線幅測定装置 90 との間で、ウェハ Wの受け渡しを行う、水平の X、 Y方向及び鉛直の Z方向に移動自 在、かつ、回転自在に形成されている。 [0044] The measurement station S5 arranged adjacent to the processing station S2 includes a carrier station S1 and a casing 80 connected to the casing 70 of the processing station S2. A line width measuring device 90 that is an apparatus, a transfer arm D that is a transfer means for transferring the wafer W to and from the line width measuring device 90, and a delivery stage TRS2 are provided. In this case, the transfer arm D is connected to the delivery stage TRS2 in the measurement station S5, to the delivery stage TRS1 in the processing station S2, and to the line width measuring device 90. The wafer W is transferred between and in the horizontal X and Y directions and in the vertical Z direction.
[0045] 上記の線幅測定装置 90は、図 7に示すように、ウェハ Wを水平に載置する載置台  As shown in FIG. 7, the line width measuring apparatus 90 includes a mounting table on which the wafer W is mounted horizontally.
91を備えている。載置台 91は、例えば X—Yステージを構成しており、水平方向の X 方向と Y方向に移動自在に形成されている。載置台 91の上方には、載置台 91上に 載置されたウェハ Wに対して斜方向から光を照射する光照射部 92と、光照射部 92 力も照射されウェハ Wで反射した光を検出する受光部 93が配設されて!/、る。受光部 93で検出した光の情報は、検出部 94に出力でき、また、検出部 94は、取得した光の 情報に基づ!/、て、ウェハ W上に形成されて!/、る所定のパターンから反射した反射光 の光強度分布を測定することができる。なお、線幅測定装置 90において、パターン の線幅の測定以外にウェハ W上に付着する不純物やパーティクル等の検出も可能 になっている。  91. The mounting table 91 forms, for example, an XY stage, and is formed to be movable in the horizontal X direction and the Y direction. Above the mounting table 91, a light irradiation unit 92 that irradiates light on the wafer W mounted on the mounting table 91 from an oblique direction, and a light irradiation unit 92 that is also irradiated with the force and detects light reflected by the wafer W is detected. A light receiving unit 93 is disposed! Information on the light detected by the light receiving unit 93 can be output to the detection unit 94, and the detection unit 94 is formed on the wafer W based on the acquired light information! The light intensity distribution of the reflected light reflected from the pattern can be measured. Note that the line width measuring apparatus 90 can detect impurities and particles adhering to the wafer W in addition to measuring the line width of the pattern.
[0046] 検出部 94からの情報は制御部 60に伝達されて、例えば線幅を測定するための情 報の処理が行われるようになつている。制御部 60は、例えば算出部 61、記憶部 62 及び解析部 63を有している。算出部 61は、例えばレジスト膜の光学定数やレジスト 膜のパターン形状、構造等の既知の情報に基づいて、線幅の異なる複数の仮想バタ ーンから反射する反射光の計算上の各光強度分布を算出できる。記憶部 62は、算 出部 61で算出されている仮想パターンに対する計算上の各光強度分布を記憶して そのライブラリを作成できる。  [0046] Information from the detection unit 94 is transmitted to the control unit 60, and information processing for measuring the line width, for example, is performed. The control unit 60 includes, for example, a calculation unit 61, a storage unit 62, and an analysis unit 63. The calculation unit 61 calculates each light intensity in calculating reflected light reflected from a plurality of virtual patterns having different line widths based on, for example, known information such as the optical constant of the resist film, the pattern shape, and the structure of the resist film. Distribution can be calculated. The storage unit 62 can store each calculated light intensity distribution for the virtual pattern calculated by the calculation unit 61 and create a library thereof.
[0047] 検出部 94で測定されたウェハ W上の実際のパターンに対する光強度分布は、解 析部 63に出力できる。解析部 63は、検出部 94から出力された実際のパターンの光 強度分布と記憶部 62のライブラリ内に記憶されている仮想パターンの光強度分布と を照合し、光強度分布が適合する仮想パターンを選択し、その仮想パターンの線幅 を実際のパターンの線幅と推定して線幅を測定できる。  The light intensity distribution for the actual pattern on the wafer W measured by the detection unit 94 can be output to the analysis unit 63. The analysis unit 63 collates the light intensity distribution of the actual pattern output from the detection unit 94 with the light intensity distribution of the virtual pattern stored in the library of the storage unit 62, and the virtual pattern with which the light intensity distribution matches. , And the line width of the virtual pattern can be estimated as the line width of the actual pattern to measure the line width.
[0048] 上記のようにして測定された線幅の情報は、露光装置 S4及び加熱ユニット (PEB) に伝達される。この場合、露光装置 S4は、露光制御部(図示せず)を有し、露光制御 部によって予め設定されている例えば光学系のウェハ Wに対する露光位置、露光量 及び露光焦点等の露光条件に従って露光処理が制御可能に形成されている。 [0049] したがって、制御部 60からの制御信号を露光装置 S4及び加熱ユニット(PEB)に 伝達することにより、パターンの線幅の測定情報に基づいて、 2回目以降のリソグラフ イエ程の露光処理における露光位置、露光量及び露光焦点等の露光補正、露光後 の加熱ユニット(PEB)の加熱処理における加熱温度や加熱時間等の温度補正を行 うこと力 Sでさる。 [0048] The line width information measured as described above is transmitted to the exposure apparatus S4 and the heating unit (PEB). In this case, the exposure apparatus S4 has an exposure control unit (not shown), and exposure is performed according to exposure conditions such as the exposure position, exposure amount, and exposure focus on the optical system wafer W preset by the exposure control unit. The process is configured to be controllable. [0049] Therefore, by transmitting a control signal from the control unit 60 to the exposure apparatus S4 and the heating unit (PEB), based on the measurement information of the line width of the pattern, in the exposure process of the second and subsequent lithography steps The force S is used to correct the exposure position, exposure amount, exposure focus, etc., and to correct the heating temperature, heating time, etc. in the heating process of the heating unit (PEB) after exposure.
[0050] また、前記処理ステーション S2とインターフェース部 S3の隣接する領域には、図 2 に示すように、メインアーム A1がアクセスできる位置に棚ユニット U6が設けられてい る。この棚ユニット U6は、 DEV層 B2のメインアーム A1との間でウェハ Wの受け渡し を行うように、受渡しステージ TRS3と、ウェハ Wの受け渡しを行う冷却機能を有する 受渡しステージ(図示せず)を備えている。また、処理ステーション S2とインターフエ ース部 S3の隣接する領域には、図 2及び図 6に示すように、周縁露光装置 (WEE) 力 段配置されている。  [0050] Further, as shown in FIG. 2, a shelf unit U6 is provided at a position where the main arm A1 can access the adjacent area of the processing station S2 and the interface unit S3. The shelf unit U6 includes a delivery stage TRS3 and a delivery stage (not shown) having a cooling function for delivering the wafer W so as to deliver the wafer W to and from the main arm A1 of the DEV layer B2. ing. Further, in a region adjacent to the processing station S2 and the interface unit S3, as shown in FIG. 2 and FIG. 6, a peripheral edge exposure device (WEE) power stage is arranged.
[0051] 一方、処理ステーション S2における棚ユニット U6の奥側には、インターフェース部 S3を介して露光装置 S4が接続されている。インターフェース部 S3には、処理ステー シヨン S2の DEV層 B2の棚ユニット U6の各部と露光装置 S4とに対してウェハ Wの受 け渡しを行うためのインターフェースアーム Eを備えている。このインターフェースァー ム Eは、処理ステーション S2と露光装置 S4との間に介在するウェハ Wの搬送手段を なすものであり、この例では、前記 DEV層 B2の受渡しステージ TRS3等に対してゥ ェハ Wの受け渡しを行うように、水平の X、 Y方向及び鉛直の Z方向に移動自在、鉛 直軸回りに回転自在に構成されて!/、る。  On the other hand, an exposure apparatus S4 is connected to the back side of the shelf unit U6 in the processing station S2 via an interface unit S3. The interface unit S3 includes an interface arm E for delivering the wafer W to each part of the shelf unit U6 of the DEV layer B2 of the processing station S2 and the exposure apparatus S4. This interface arm E forms a means for transporting the wafer W interposed between the processing station S2 and the exposure apparatus S4. In this example, the interface arm E is used for the transfer stage TRS3 etc. of the DEV layer B2. C It is configured to move in the horizontal X, Y and vertical Z directions and to rotate around the lead straight axis so as to deliver W!
[0052] 次に、上記のように構成されるレジスト塗布 ·現像処理装置において、ウェハ Wを処 理する手順の一例について図 8A乃至図 8Eを参照して説明する。  Next, an example of a procedure for processing the wafer W in the resist coating / development processing apparatus configured as described above will be described with reference to FIGS. 8A to 8E.
[0053] まず、キャリアストック部 13内のキャリア 20をキャリアリフタ 14によってキャリア載置 部 10に搬入すなわち載置する。この場合、上部載置棚 11上に載置されたキャリア 2 0の一つには 25枚のウェハ Wが収容されている。また、下部載置棚 12の一つには空 のキャリア 20が載置されて!/、る(図 8A参照)。  First, the carrier 20 in the carrier stock unit 13 is loaded, that is, placed on the carrier placement unit 10 by the carrier lifter 14. In this case, 25 wafers W are accommodated in one of the carriers 20 placed on the upper placement shelf 11. Also, an empty carrier 20 is placed on one of the lower placement shelves 12! /, (See FIG. 8A).
[0054] 次に、蓋開閉装置 25によって上部載置棚 11上に載置された 25枚のウェハ Wを収 容するキャリア 20の蓋体 23を開放する。蓋体 23が開放された状態で、マッピングセ ンサ 26によってキャリア 20内のウェハ Wの収容状態例えば枚数、水平姿勢等が検 出され、その検出信号が制御部 60に伝達される。すると、制御部 60からの制御信号 によってトランスファーアーム Cが作動して、キャリア 20内からウェハ Wを搬出し、キヤ リアステーション S1に隣接する測定ステーション S 5の受渡しステージ TRS 2に受け 渡す。受渡しステージ TRS2に受け渡されたウェハ Wは搬送アーム Dによって処理ス テーシヨン S2の受渡しステージ TRS1に受け渡された後、メインアーム A2によって疎 水化処理ユニット ADHに搬送され、疎水化処理される。 Next, the lid 23 of the carrier 20 that accommodates the 25 wafers W placed on the upper placement shelf 11 is opened by the lid opening / closing device 25. With the lid 23 open, The sensor 26 detects the accommodation state of the wafer W in the carrier 20, for example, the number of sheets, the horizontal posture, and the like, and transmits the detection signal to the control unit 60. Then, the transfer arm C is operated by the control signal from the control unit 60, the wafer W is unloaded from the carrier 20, and is transferred to the transfer stage TRS 2 of the measurement station S5 adjacent to the carrier station S1. The wafer W transferred to the transfer stage TRS2 is transferred by the transfer arm D to the transfer stage TRS1 of the processing station S2, and then transferred to the hydrophobization unit ADH by the main arm A2 and subjected to a hydrophobic treatment.
[0055] ウェハ Wは疎水化処理された後に棚ユニット U5に一時収納され、メインアーム A2 によって棚ユニット U5から取り出され、塗布ユニット 32に搬送されて、塗布ユニット 3 2においてレジスト膜が形成される。レジスト膜が形成されたウェハ Wは、メインアーム A2によって加熱ユニット(CLHP)に搬送されて、溶剤をレジスト膜から蒸発させるた めのプリベータ(PAB)が施される。その後、ウェハ Wは周縁露光装置 (WEE)に搬 送されて、周辺露光処理が施された後、加熱処理が施される。次いで、ウェハ Wは、 インターフェースアーム Eにより露光装置 S4に搬送され、ここで所定の露光処理が行 われる。 [0055] The wafer W is hydrophobized and then temporarily stored in the shelf unit U5, taken out of the shelf unit U5 by the main arm A2, and transferred to the coating unit 32 to form a resist film in the coating unit 32. . The wafer W on which the resist film is formed is transferred to the heating unit (CLHP) by the main arm A2, and subjected to a pre-beta (PAB) for evaporating the solvent from the resist film. Thereafter, the wafer W is transferred to a peripheral edge exposure apparatus (WEE), subjected to a peripheral exposure process, and then subjected to a heating process. Next, the wafer W is transferred to the exposure apparatus S4 by the interface arm E, where a predetermined exposure process is performed.
[0056] 露光処理後のウェハ Wは、インターフェースアーム Eにより、 DEV層 B2にウェハ W を受け渡すために、棚ユニット U6の受渡しステージ TRS3に搬送され、このステージ TRS3上のウェハ Wは、 DEV層 B2のメインアーム A1に受け取られ、当該 DEV層 B 2にて、まず、加熱ユニット(PEB)でポストェクスポージャーベータ処理された後、メイ ンアーム A1によって棚ユニット U6の冷却プレート(図示せず)に搬送されて、所定温 度に調整される。次いで、ウェハ Wは、メインアーム A1によって棚ユニット U6から取 り出されて現像ユニット 31に搬送されて、現像液が塗布される。その後、メインアーム A1によって加熱ユニット(POST)に搬送され、所定の現像処理が行われる。  [0056] The wafer W after the exposure processing is transferred by the interface arm E to the delivery stage TRS3 of the shelf unit U6 in order to deliver the wafer W to the DEV layer B2, and the wafer W on the stage TRS3 is transferred to the DEV layer. After being received by the main arm A1 of B2 and first subjected to post-exposure beta processing by the heating unit (PEB) in the DEV layer B2, the main arm A1 applies a cooling plate (not shown) to the shelf unit U6. It is transported and adjusted to a predetermined temperature. Next, the wafer W is taken out from the shelf unit U6 by the main arm A1 and transferred to the developing unit 31, where a developing solution is applied. Thereafter, the main arm A1 transports it to the heating unit (POST), where a predetermined development process is performed.
[0057] 現像処理後のウェハ Wは、棚ユニット U5の受渡しステージ TRS 1に搬送され、この ステージ TRS1上のウェハ Wは、測定ステーション S5の搬送アーム Dに受け取られ、 測定ステーション S5の線幅測定装置 90に搬送されて、ウェハ W上に形成されたバタ 一ンの線幅が測定される。この線幅の測定情報は制御部 60に伝達されて、制御部 6 0に記憶される。 [0058] 線幅の測定が行われたウェハ Wは、搬送アーム Dによって線幅測定装置 90から取 り出された後、処理ステーション S2の受渡しステージ TRS1に搬送され、ステージ TR S 1のウェハ Wは、処理ステーション S2のメインアーム A2に受け取られ、洗浄ユニット (SCR)に搬送されて、洗浄処理が施される。これにより、一連のリソグラフイエ程が終 了する。 [0057] The developed wafer W is transferred to the delivery stage TRS 1 of the shelf unit U5, and the wafer W on the stage TRS1 is received by the transfer arm D of the measurement station S5 to measure the line width of the measurement station S5. The line width of the pattern formed on the wafer W after being transferred to the apparatus 90 is measured. The measurement information of the line width is transmitted to the control unit 60 and stored in the control unit 60. The wafer W on which the line width has been measured is taken out from the line width measuring device 90 by the transfer arm D, and then transferred to the delivery stage TRS1 of the processing station S2, and the wafer W of the stage TR S 1 Is received by the main arm A2 of the processing station S2, transferred to the cleaning unit (SCR), and subjected to the cleaning process. This completes a series of lithographic processes.
[0059] 前記のようにして、一連のリソグラフイエ程が行われたウェハ Wは、トランスファーァ ーム Cにより、キャリアステーション S 1の下部載置棚 12上に載置された空のキャリア 2 0内に収容される(図 8B参照)。この際、キャリア 20内に例えば 12枚のウェハ Wが収 容されると、マッピングセンサ 26によってウェハ Wの収容状態が検出され、その検出 信号が制御部 60に伝達され、制御部 60からの制御信号に基づいて蓋開閉装置 25 が作動してキャリア 20の蓋体 23を閉塞する。  The wafer W that has undergone a series of lithographic processes as described above is transferred to the empty carrier 20 placed on the lower placement shelf 12 of the carrier station S 1 by the transfer farm C. (See Figure 8B). At this time, for example, when 12 wafers W are accommodated in the carrier 20, the mapping sensor 26 detects the accommodation state of the wafer W, and the detection signal is transmitted to the control unit 60, and the control from the control unit 60 is performed. Based on the signal, the lid opening / closing device 25 operates to close the lid 23 of the carrier 20.
[0060] キャリア 20の蓋体 23が閉塞された後、移動機構 16が作動して 12枚のウェハ Wが 収容されたキャリア 20を載置する下部載置棚 12が、上部載置棚 11と干渉しない外 方位置に移動される(図 8C参照)。外方位置に移動された下部載置棚 12上に載置 されたキャリア 20は、キャリアリフタ 14によってキャリアストック部 13に搬送される。  [0060] After the lid 23 of the carrier 20 is closed, the moving mechanism 16 operates and the lower mounting shelf 12 on which the carrier 20 containing 12 wafers W is placed is connected to the upper mounting shelf 11 and It is moved to an outside position where it does not interfere (see Figure 8C). The carrier 20 placed on the lower placement shelf 12 moved to the outer position is transported to the carrier stock unit 13 by the carrier lifter 14.
[0061] キャリア 20が搬出(搬送)された下部載置棚 12上には、キャリアリフタ 14によってキ ャリアストック部 13内に配置された新たな空のキャリア 20が搬送されて載置される(図 8D参照)。その後、移動機構 16が作動してキャリア 20を載置した下部載置棚 12は キャリアステーション S 1の搬入口 19bの近接位置に移動される(図 8E参照)。そして 、この空のキャリア 20内に残りの処理済みの 13枚のウェハ Wが収容された後、マツピ ングセンサ 26がキャリア 20内のウェハ Wの収容状態例えば 13枚を検出し、蓋開閉 装置 25によって蓋体 23が閉塞される。その後、前記と同様に、移動機構 16が作動し て 13枚のウェハ Wが収容されたキャリア 20を載置する下部載置棚 12が、上部載置 棚 11と干渉しない外方位置に移動された状態で、キャリアリフタ 14によってキヤリアス トツク部 13に搬送される。  [0061] On the lower mounting shelf 12 from which the carrier 20 has been carried out (conveyed), a new empty carrier 20 disposed in the carrier stock section 13 is transported and placed by the carrier lifter 14 (see FIG. See 8D). Thereafter, the lower mounting shelf 12 on which the moving mechanism 16 is activated to place the carrier 20 is moved to a position close to the carry-in port 19b of the carrier station S1 (see FIG. 8E). After the remaining 13 processed wafers W are accommodated in the empty carrier 20, the mapping sensor 26 detects the accommodated state of the wafers W in the carrier 20, for example, 13 and the lid opening / closing device 25 The lid 23 is closed. Thereafter, similarly to the above, the moving mechanism 16 is operated, and the lower mounting shelf 12 on which the carrier 20 containing 13 wafers W is placed is moved to an outer position where it does not interfere with the upper mounting shelf 11. In this state, the carrier lifter 14 transports the carrier stock 13 to the carrier stock unit 13.
[0062] なお、前記説明では、 1回のリソグラフイエ程を行う場合について説明した力 1回 目のリソグラフイエ程が行われたウェハ Wを収容するキャリア 20をキャリア載置部 10 の例えば上部載置棚 11に載置して、前記と同様のリソグラフイエ程を繰り返すことに より、ウェハ wに形成されるパターンの微細化を図ることができる。すなわち、 1回目 のリソグラフイエ程及びエッチング工程が行われたウェハ Wは、前記と同様に、レジス ト塗布処理(COT)→プリベータ(PAB)→周辺露光処理 (WEE)→加熱処理(BAK E)→露光処理(EXP)→ポストェクスポージャーベータ(PEB)→現像処理(DEV)を 行うことにより、 1回のリソグラフィ処理によって形成されたパターンのピッチ間にバタ ーンを追加形成して、微細ピッチのパターンを形成することができる。 In the above description, the force described for the case where the first lithographic process is performed is the carrier 20 that accommodates the wafer W that has been subjected to the first lithographic process. Place it on the shelf 11 and repeat the same lithographic process as above. As a result, the pattern formed on the wafer w can be miniaturized. That is, the wafer W that has been subjected to the first lithographic process and the etching process is subjected to the resist coating process (COT) → the pre-beta (PAB) → the peripheral exposure process (WEE) → the heating process (BAK E) as described above. → By performing exposure processing (EXP) → post-exposure beta (PEB) → development processing (DEV), a pattern is additionally formed between the pitches of the pattern formed by one lithography process. The pattern can be formed.
[0063] なお、 2回目のリソグラフイエ程において、 1回目のエッチング処理後に線幅測定装 置 90によって測定された測定情報を、制御部 60から露光装置 S4及び加熱ユニット ( PEB)に伝達することにより、パターンの線幅の測定情報に基づいて、 2回目以降の リソグラフイエ程の露光処理における露光位置、露光量及び露光焦点等の露光補正 、露光後の加熱ユニット (PEB)の加熱処理における加熱温度や加熱時間等の温度 補正等を行うことができる。これにより、ウェハ Wに形成されるパターンの微細化が図 れる。 [0063] In the second lithographic process, measurement information measured by the line width measuring device 90 after the first etching process is transmitted from the control unit 60 to the exposure device S4 and the heating unit (PEB). Based on the measurement information of the line width of the pattern, exposure correction such as exposure position, exposure amount and exposure focus in the second and subsequent exposure processes, heating in the heating process of the heating unit (PEB) after exposure Temperature correction such as temperature and heating time can be performed. As a result, the pattern formed on the wafer W can be miniaturized.
[0064] また、 2回目のリソグラフイエ程が行われたウェハ Wは、測定ステーション S5の線幅 測定装置 90に搬送されて、パターンの線幅が測定されると共にウェハ W表面に付着 する不純物やパーティクル等が測定される(CDM/MCRO)。この測定情報も制御 部 60に伝達されて、ウェハ Wに形成された線幅の形状やピッチ、ウェハ Wに付着す る不純物やパーティクル等の状態を確認することができる。  [0064] Further, the wafer W that has been subjected to the second lithographic process is transferred to the line width measuring device 90 of the measurement station S5, where the line width of the pattern is measured and impurities adhering to the surface of the wafer W are measured. Particles are measured (CDM / MCRO). This measurement information is also transmitted to the control unit 60, and the shape and pitch of the line width formed on the wafer W and the state of impurities and particles adhering to the wafer W can be confirmed.
[0065] 前記のようにして 2回目のリソグラフイエ程が行われたウェハ Wは、トランスファーァ ーム Cにより、キャリアステーション S 1の例えば下部載置棚 12に載置されているキヤリ ァ 20に戻されて処理が終了する。  The wafer W that has been subjected to the second lithographic process as described above is transferred to the carrier 20 mounted on, for example, the lower mounting shelf 12 of the carrier station S 1 by the transfer farm C. Returned and the process ends.
[0066] なお、上記の実施形態では、反射防止膜を形成しない場合について説明したが、 レジスト膜の下側や上側に反射防止膜を形成する場合においても、前記レジスト塗 布-現像処理装置を同様に適用することができる。  In the above embodiment, the case where the antireflection film is not formed has been described, but the resist coating-developing apparatus is also used when the antireflection film is formed below or above the resist film. The same can be applied.
[0067] なお、前記実施形態では、キャリア載置部 10が 2段の載置棚 11、 12を有する場合 について説明したが、 3段以上の載置棚有するようにしてもよい。この場合においても 、下段に位置する載置棚を上段に位置する載置棚と干渉しない外方位置に移動可 能に形成して、上述と同様にキャリア 20の受け渡しを行うようにする。 産業上の利用可能性 In the above-described embodiment, the case where the carrier mounting unit 10 includes the two mounting shelves 11 and 12 has been described. However, the carrier mounting unit 10 may include three or more mounting shelves. Also in this case, the mounting shelf located in the lower stage is formed so as to be movable to an outer position that does not interfere with the mounting shelf located in the upper stage, and the carrier 20 is delivered as described above. Industrial applicability
[0068] 本発明によれば、半導体デバイスの製造のために使用される装置を必要以上に大 型化することなぐキャリア数を増加でき、基板の高速処理化及び少ロット処理を可能 にした基板搬送処理装置を提供することが可能となる。 [0068] According to the present invention, the number of carriers can be increased without unnecessarily increasing the size of an apparatus used for manufacturing a semiconductor device, and the substrate can be processed at high speed and in a small lot. A conveyance processing apparatus can be provided.
[0069] 以上、本発明の好ましい実施例について説明した力 本発明はかかる特定の実施 例に限定されるものではなぐ特許請求の範囲に記載した要旨内において様々な変 形や変更が可能である。 [0069] The power described above for the preferred embodiments of the present invention The present invention is not limited to such specific embodiments, and various modifications and changes can be made within the scope described in the claims. .
[0070] 本出願は、優先権主張の基礎となる 2006年 11月 17日出願の特許出願第 2006[0070] This application is the basis for priority claim. Patent application No. 2006 filed on Nov. 17, 2006.
— 311031号に基づいており、その全内容がここに援用されている。 — Based on issue 311031, the entire contents of which are incorporated herein.

Claims

請求の範囲 The scope of the claims
[1] 被処理基板を収容するキャリアを搬入出するキャリアステーションと、被処理基板に 各種処理を施す処理ユニットを配置する処理ステーションと、前記キャリアステーショ ンと処理ステーションとの間で被処理基板を受け渡しする搬送手段とを備える基板搬 送処理装置であって、  [1] A carrier station that carries in and out a carrier that accommodates a substrate to be processed, a processing station that includes a processing unit that performs various types of processing on the substrate to be processed, and a substrate to be processed between the carrier station and the processing station. A substrate transfer processing apparatus comprising transfer means for delivering,
前記キャリアステーションは、複数のキャリアが載置可能な複数段の載置棚を有す るキャリア載置部と、このキャリア載置部の上方に位置するキャリアストック部と、前記 キャリア載置部とキャリアストック部との間でキャリアを受け渡しするキャリア受渡し手 段と、前記キャリア載置部に搬入されたキャリアに対して被処理基板を搬出入する基 板搬出入手段とを備え、  The carrier station includes a carrier mounting unit having a plurality of mounting shelves on which a plurality of carriers can be mounted, a carrier stock unit positioned above the carrier mounting unit, and the carrier mounting unit. A carrier delivery means for delivering the carrier to and from the carrier stock unit, and a substrate carrying-in / out means for carrying in / out the substrate to be processed with respect to the carrier carried into the carrier mounting unit,
前記キャリア載置部における下段に位置する載置棚は、移動機構によって上段の 載置棚に対して、前記上段の載置棚の下方位置と、鉛直方向に干渉しない外方位 置に移動可能に形成され、かつ、外方位置にある載置棚に対して前記キャリア受渡 し手段がキャリアを受け渡し可能に形成されることを特徴とする基板搬送処理装置。  The placement shelf located in the lower stage of the carrier placement section can be moved to the lower position of the upper placement shelf and the outer orientation that does not interfere in the vertical direction with respect to the upper placement shelf by the moving mechanism. A substrate transfer processing apparatus, wherein the carrier transfer means is formed so as to be able to transfer a carrier to a mounting shelf which is formed and located at an outer position.
[2] 前記キャリア内に収容される被処理基板の収容状態を検出する基板検出手段と、 前記基板検出手段によって検出された検出信号を受けて、前記キャリア内に収容さ れる被処理基板が所定数の状態になった際に、キャリア受渡し手段及び載置棚の移 動機構に作動信号を伝達する制御手段とを更に備えることを特徴とする請求項 1記 載の基板搬送処理装置。  [2] Substrate detection means for detecting the accommodation state of the substrate to be processed accommodated in the carrier, and the substrate to be processed accommodated in the carrier in response to the detection signal detected by the substrate detection means. 2. The substrate transfer processing apparatus according to claim 1, further comprising a control means for transmitting an operation signal to the carrier delivery means and the placement shelf moving mechanism when the number of states is reached.
[3] 下段に位置する前記載置棚は、 1個のキャリアを独立して載置すると共に、上段の 載置棚の下方位置と外方位置に独立して移動可能な複数の棚体を有することを特 徴とする請求項 1記載の基板搬送処理装置。  [3] The placement shelf located in the lower stage is provided with a plurality of shelves that can be independently moved to the lower position and the outer position of the upper placement shelf while placing one carrier independently. The substrate transfer processing apparatus according to claim 1, wherein the substrate transfer processing apparatus is provided.
[4] 下段に位置する前記載置棚は、 1個のキャリアを独立して載置すると共に、上段の 載置棚の下方位置と外方位置に独立して移動可能な複数の棚体を有することを特 徴とする請求項 2記載の基板搬送処理装置。  [4] The placement shelf located in the lower stage is provided with a plurality of shelves that can be independently moved to a lower position and an outer position of the upper placement shelf while placing one carrier independently. The substrate transfer processing apparatus according to claim 2, wherein the substrate transfer processing apparatus is provided.
[5] 前記キャリアは、複数の被処理基板を収容する収容容器と、前記収容容器の開口 部を開放及び閉塞する蓋体とを備え、  [5] The carrier includes a storage container that stores a plurality of substrates to be processed, and a lid that opens and closes an opening of the storage container.
前記キャリアステーションは、前記蓋体の開放及び閉塞を行う蓋開閉装置を備え、 前記蓋開閉装置は、各段の載置棚に載置されるキャリアに対して昇降可能に形成 され、蓋体の開放時には、上下段の載置棚に干渉しない位置に蓋体を開放するよう に形成されることを特徴とする請求項 1記載の基板搬送処理装置。 The carrier station includes a lid opening / closing device that opens and closes the lid, The lid opening / closing device is formed so as to be able to move up and down with respect to the carrier placed on each stage mounting shelf, and when the lid is opened, the lid opens to a position where it does not interfere with the upper and lower stage mounting shelves. The substrate transfer processing apparatus according to claim 1, wherein the substrate transfer processing apparatus is formed.
[6] 前記キャリアは、複数の被処理基板を収容する収容容器と、前記収容容器の開口 部を開放及び閉塞する蓋体とを備え、 [6] The carrier includes a storage container that stores a plurality of substrates to be processed, and a lid that opens and closes an opening of the storage container.
前記キャリアステーションは、前記蓋体の開放及び閉塞を行う蓋開閉装置を備え、 前記蓋開閉装置は、各段の載置棚に載置されるキャリアに対して昇降可能に形成 され、蓋体の開放時には、上下段の載置棚に干渉しない位置に蓋体を開放するよう に形成されることを特徴とする請求項 2記載の基板搬送処理装置。  The carrier station includes a lid opening / closing device that opens and closes the lid, and the lid opening / closing device is formed to be movable up and down with respect to a carrier placed on a mounting shelf at each stage. 3. The substrate transfer processing apparatus according to claim 2, wherein when the cover is opened, the lid is opened at a position that does not interfere with the upper and lower mounting shelves.
[7] 前記キャリアは、複数の被処理基板を収容する収容容器と、前記収容容器の開口 部を開放及び閉塞する蓋体とを備え、 [7] The carrier includes a storage container that stores a plurality of substrates to be processed, and a lid that opens and closes the opening of the storage container.
前記キャリアステーションは、前記蓋体の開放及び閉塞を行う蓋開閉装置を備え、 前記蓋開閉装置は、各段の載置棚に載置されるキャリアに対して昇降可能に形成 され、蓋体の開放時には、上下段の載置棚に干渉しない位置に蓋体を開放するよう に形成されることを特徴とする請求項 3記載の基板搬送処理装置。  The carrier station includes a lid opening / closing device that opens and closes the lid, and the lid opening / closing device is formed to be movable up and down with respect to a carrier placed on a mounting shelf at each stage. 4. The substrate transfer processing apparatus according to claim 3, wherein when the cover is opened, the lid is opened at a position where the lid does not interfere with the upper and lower mounting shelves.
PCT/JP2007/070119 2006-11-17 2007-10-16 Substrate carrying equipment WO2008059684A1 (en)

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