JP3590327B2 - Coating and development processing system - Google Patents

Description

【００５１】
その後，ウェハＷは，第２のウェハ搬送体４１によって，加熱・冷却処理装置６３，６４，６５又６６からエクステンション装置６１又は６２に搬送される。その後，ウェハＷは，主搬送装置１３によって，エクステンション装置６１又６２内から搬出される。このとき，第２のシャッタ７４が開放され，ウェハＷが露光処理装置５内から搬出されると，第２のシャッタ７４は再び閉じられる。
【００５２】
その後，ウェハＷは，現像処理装置１９又は２０に搬送され，現像処理され，図９に示すように，露光部分が除去されて所定の回路パターンが形成される。そして，現像処理されたウェハＷは，ポストベーキング装置３５又は３６に搬送されて加熱され，その後クーリング装置３３又は３４に搬送され，所定温度に冷却される。そして，第３の処理装置群のエクステンション装置３２に搬送され，そこからウェハ搬送体７によって，カセットステーション２のカセットＣに戻される。以上の工程により，一連のフォトリソグラフィー工程が終了する。
【００５３】
以上の実施の形態によれば，第１の気体供給装置８０によって露光前の領域Ｓ１に不活性気体を供給し，第１の排気手段８２によってこの露光前の領域Ｓ１の雰囲気を排気することにより，露光前の領域Ｓ１内から酸素や水蒸気等の不純物を除去し，清浄な状態に維持することができる。したがって，露光処理直前の加熱処理（ＰＲＥＢＡＫＥ）から露光処理に移行までの間，ウェハＷ清浄な雰囲気の中で搬送することができ，不純物が付着することを防止することができる。
【００５４】
特にレジスト膜が形成されたウェハＷが加熱処理された後は，ウェハＷ上に不純物が付着しやすい状態になっており，さらに露光処理される際にウェハＷに不純物が付着していると，その不純物が露光で用いられるレーザ光等のエネルギーを吸収してしまい，露光処理が好適に行われないおそれがあるが，このように露光処理直前に通過するインタフェイス部４の露光前の領域Ｓ１を清浄な状態に維持することで，ウェハＷの露光処理を好適に行うことができ，ウェハＷの歩留まりに大きく貢献する。また，露光処理装置５内で用いられるレーザ光の波長が短ければ短いほど，不純物による影響が大きくなるので，短い波長，例えば１５７ｎｍのレーザ光を用いた場合にその効果は大きい。
【００５５】
また，第２の気体供給装置８１によって露光後の領域Ｓ２に不活性気体を供給し，第２の排気管８３によってこの露光後の領域Ｓ２の雰囲気を排気することにより，露光前の領域Ｓ１と同様に，露光後の領域Ｓ２の雰囲気を清浄な状態に維持することができる。
【００５６】
特にウェハＷに，酸の触媒反応により回路パターンの形成を図る化学増幅型レジストが使用されている場合，露光処理後にウェハＷに不純物（例えば塩基性物質）が付着してしまうと，酸が失活してしまうが，このように露光処理直後に通過するインタフェイス部４の露光後の領域Ｓ２を清浄な状態に維持することで，酸の失活を防ぎ，後の現像処理を好適に行うことができるようになる。
【００５７】
また，各領域に対しては個別の気体供給装置により不活性気体を供給し，さらに露光前の領域Ｓ１と露光後の領域Ｓ２とを仕切板４２により遮断することにより，お互いの雰囲気が干渉し合うことを防止することができ，露光前の領域Ｓ１と露光後の領域Ｓ２を各領域特有の雰囲気に維持することができる。したがって，インタフェイス部における露光前のウェハ経路と露光後のウェハ経路の雰囲気を個別に制御することができる。
【００５８】
特に第２の気体供給装置８１によって常温よりも温度が低い不活性気体を供給しているので，露光後の領域Ｓ２内を低温の状態に維持することができる。前述した化学増幅型レジストに，常温でもベースポリマーの水酸基を保護する保護基が脱離反応を起こすような性質がある場合，露光後の領域Ｓ２の温度雰囲気が常温以上であれば，露光後の領域Ｓ２内を搬送中にウェハＷ上で保護基の離脱反応が進行してしまうが，露光後の領域Ｓ２を低温な状態に維持することで，搬送中の保護機の離脱反応を抑えることができる。例えば露光後に行われる加熱処理（ＰＥＢ）では，酸の触媒反応を一気に加速させて保護基の離脱反応を適切に進行させ，露光部分・未露光部分の極性変化を完了させることができる。したがって，回路パターンの形成を良好に行うことができ，後の現像処理を好適に行うことができる。
【００５９】
第１の気体供給装置８０，第２の気体供給装置８１は，何れも温度調整機能を有しているので，露光前の領域Ｓ１，露光後のＳ２をそれぞれ所定温度に維持することができる。
【００６０】
露光前の領域Ｓ１内の圧力Ｐ１及び露光後の領域Ｓ２内の圧力Ｐ２を露光処理装置５内の圧力Ｐ３よりも低くすることにより，露光前の領域Ｓ１内及び露光後の領域Ｓ２内の雰囲気が，雰囲気が厳格に制御されている露光処理装置５内に流入することを防止することができる。
【００６１】
なお，本発明の実施の形態の一例について説明したが，本発明はこの例に限らず種々の態様を採りうるものである。カセットステーション２の上部及び処理ステーション２の上部に，それぞれ気体供給装置を設け，これらの下部に，それぞれ排気管を設けて，カセットステーション２及び処理ステーション３内も，清浄な状態に維持すると良い。そうすれば，塗布現像処理システム１全体を清浄な状態に維持することができ，一連のフォトリソグラフィー工程を好適に行うことができる。
【００６２】
また，不活性気体の消費量を節約するために，例えば各領域から排気された不活性気体の一部又は全部を回収し，その後に清浄化し，各気体供給装置８０，８１に送って不活性気体として再利用しても良い。
【００６３】
なお，以上で説明した実施の形態は，半導体ウェハデバイス製造プロセスのフォトリソグラフィー工程におけるウェハＷの塗布現像処理システムについてであったが，本発明は半導体ウェハ以外の基板例えばＬＣＤ基板の塗布現像処理システムにおいても応用できる。
【００６４】
【発明の効果】
本発明によれば，塗布現像処理システム内に不活性気体を供給して，酸素，塩基性物質，オゾン，有機物等の分子レベルの不純物が基板に付着することが防止できるため，その不純物に影響されることなく基板の処理が好適に行われ，歩留まりの向上が図られる。また，インタフェイス部における露光前の基板経路と露光後の基板経路の雰囲気を個別に制御することができる。
【００６５】
特に化学増幅型レジストを用いる場合，露光の際に発生する酸が，空気中の塩基性物質と反応して失活する事態を防止することができる。また，露光後の領域内を低温に維持することができるので，搬送中の保護基の離脱反応を抑えることができる。したがって，後の現像処理を好適に行うことができる。
【００６６】
本発明によれば，露光前の領域と露光後の領域を，清浄かつ各領域特有の雰囲気に維持することができ，また各領域を所定温度に維持することができる。さらに露光前の領域及び露光後の領域の雰囲気が，雰囲気が厳格に制御されている露光処理装置内に流入することを防止することができる。
【図面の簡単な説明】
【図１】本実施の形態にかかる塗布現像処理システムの外観を示す平面図である。
【図２】図１の塗布現像処理システムの正面図である。
【図３】処理ステーションの縦断図の説明図である。
【図４】インタフェイス部の縦断図の説明図である。
【図５】図１の塗布現像処理システム１内の加熱・冷却処理装置の概略を示す横断面図である。
【図６】インタフェイス部に供給される不活性気体の流れの状態を塗布現像処理システムの側方からみた場合の説明図である。
【図７】インタフェイス部に供給される不活性気体の流れの状態を示す縦断面の説明図である。
【図８】回路パターンが露光されるレジスト膜の様子を示す説明図である。
【図９】現像後のレジスト膜の様子を示す説明図である。
【符号の説明】
１ 塗布現像処理システム
４ インタフェイス部
５ 露光処理装置
４０ 第１のウェハ搬送体
４１ 第２のウェハ搬送体
４２，７０ 仕切板
７１ 第１の通過口
７２ 第１のシャッタ
７３ 第２の通過口
７４ 第２のシャッタ
８０ 第１の気体供給装置
８１ 第２の気体供給装置
８２ 第１の排気管
８３ 第２の排気管
Ｓ１ 露光前の領域
Ｓ２ 露光後の領域
Ｗ ウェハ[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate coating and developing system.
[0002]
[Prior art]
For example, in a photolithography process in a semiconductor device manufacturing process, a resist coating process for forming a resist film on a wafer surface, an exposure process for irradiating a pattern with a wafer for exposure, a development process for developing the exposed wafer, and a coating process Heat processing, cooling processing, etc., before processing, before and after exposure processing, and after development processing are performed. These processes are performed in individually provided processing devices, and these processing devices are integrated into one so that the above-described series of processes can be continuously performed, thereby forming a coating and developing processing system. .
[0003]
Usually, the coating and developing system includes a loader / unloader unit for loading and unloading a substrate into and from the coating and developing system, a coating device, a developing device, a heat treatment device, and the like, and most of the wafer processing is performed. A processing unit, an exposure processing unit outside the system in which the wafer exposure processing is performed, and a processing unit provided between the processing unit and the exposure processing unit to transfer a wafer between the processing unit and the exposure processing unit. And an interface unit for performing the operation.
[0004]
When a wafer is processed in the coating and developing system, the coated and developing system is cleaned by an air cleaner or the like in order to prevent impurities from adhering to the wafer. Normal temperature air is supplied as a downflow, while the atmosphere in the coating and developing system is evacuated so that the wafer can be processed in a clean state at normal temperature.
[0005]
Further, in order to realize high-sensitivity exposure, a chemically amplified resist is used. This chemically amplified resist has, for example, a base polymer that is insoluble in an alkali developer and an acid generator. You get the resolution. In the exposure processing section, the circuit pattern is exposed on the resist film using a mask, and the acid generated at this time causes a elimination reaction to the protecting group protecting the hydroxyl group of the base polymer. After that, the wafer is transferred to a heat treatment apparatus, and the acid catalyzed reaction is accelerated by post-exposure baking (PEB) to accelerate the desorption reaction. For example, the exposed portion becomes soluble in an alkali developing solution. I do. Then, the wafer is conveyed to a development processing apparatus, and the soluble portion is removed with a developer to obtain a precise circuit pattern.
[0006]
[Problems to be solved by the invention]
By the way, recently, in order to form finer and more precise circuit patterns, an exposure technique using shorter wavelength light is being developed, and the use of the shorter wavelength light has been a problem until now. It has been confirmed that impurities at the molecular level, for example, oxygen, basic substances, ozone, water vapor, etc., which have not been obtained, have an adverse effect on the formation of a precise circuit pattern. In particular, if the impurities are attached to the wafer during exposure, an appropriate pattern is not exposed, and a reduction in yield cannot be avoided.
[0007]
Therefore, it is necessary to prevent the impurities from adhering to the wafer being processed. However, it is inappropriate to use clean air as in the past because the air itself contains impurities such as oxygen. .
[0008]
Since the acid generated at the time of exposure has high reactivity, for example, during transport of the wafer, the acid undergoes a neutralization reaction with a basic substance in the air. In such a case, the acid is deactivated, which causes the formation of a surface insoluble layer and a variation in the line width of the circuit pattern. The elimination reaction of the protective group depends on the temperature, and depending on the type of the chemically amplified resist, the elimination reaction of the protective group occurs by a catalytic reaction of an acid even at a normal temperature, for example. For this reason, during the transportation before the PEB, the detachment reaction proceeds, which may lead to pattern deformation, deterioration of reproducibility, and the like.
[0009]
There is still room for improvement in today's demand for more precise circuit patterns, even to the extent that pattern deformation has been negligible in the past, and such demands cannot be met with conventional clean air or system configurations.
[0010]
Furthermore, the wafer moves back and forth between the processing unit and the exposure processing unit via the interface unit. However, as described above, there is a possibility that the acid neutralization reaction and the protective group detachment reaction may occur after the exposure. On the other hand, since no acid is generated before the exposure, the required state of the atmosphere in the interface section is different before and after the exposure. Therefore, it is demanded to form an optimum atmosphere in the interface portion according to the state of the wafer after exposure.
[0011]
SUMMARY OF THE INVENTION The present invention has been made in view of the above-described circumstances, and it is possible to prevent fine impurities at a molecular level from adhering to a substrate such as a wafer. It is an object of the present invention to provide a coating and developing system capable of individually controlling the atmosphere of the coating and preventing the deactivation of the acid and the pattern deformation.
[0012]
[Means for Solving the Problems]
BookAccording to the invention, a coating processing apparatus for forming at least a coating film on a substrate, a developing processing apparatus for developing the substrate, a heat processing apparatus for performing heat treatment on the substrate, and a coating processing apparatus, a developing processing apparatus, and a heat processing apparatus A processing unit having a substrate transfer device that carries the substrate in and out of the apparatus; and an interface unit that transfers the substrate in a path between the processing unit and an exposure processing device that performs exposure processing of the substrate. Is a coating and developing system provided in the casing,The inside of the interface portion is divided into two regions, a region before exposure and a region after exposure, by a partition plate for shielding the atmosphere,The interface sectionIn the area before exposure,A first heat treatment apparatus for performing heat treatment on the substrate before exposure, and a first transfer apparatus for transferring the substrate before exposure.Is placed in the exposed area of the interface section,A second heat treatment apparatus for performing heat treatment on the substrate after exposure, and a second transfer apparatus for transferring the substrate after exposure,SaidA first gas supply device that supplies an inert gas to a region before exposure, a first exhaust unit that exhausts an atmosphere in the region before exposure,SaidA coating and developing system comprising: a second gas supply device for supplying an inert gas to a region after exposure; and a second exhaust unit for exhausting an atmosphere in the region after exposure.Is provided. Note that the heat treatment apparatus, the first heat treatment apparatus, and the second heat treatment apparatus include a heat treatment apparatus, a cooling treatment apparatus, a heating / cooling treatment apparatus, and the like. Further, the processing unit includes other processing devices such as an extension device for holding the substrate in a standby state and an adhesion device for supplying a predetermined processing solution onto the substrate in order to enhance the fixability of the coating solution to the substrate. May be.
[0013]
The present inventionAccording to the coating and developing system of the above, in the interface section, the inert gas is supplied to the area before exposure by the first gas supply device, and the atmosphere in the area before exposure is exhausted by the first exhaust means. As a result, impurities such as oxygen and water vapor can be removed from the region before exposure, and the region can be kept clean. Therefore, the substrate can be transported in a clean atmosphere during the period from the heating process immediately before the exposure process to the transition to the exposure process, and the deposition of impurities can be prevented. In particular, after the substrate on which the coating film is formed is subjected to heat treatment, impurities are easily attached to the substrate. If impurities are attached to the substrate during the exposure processing, the impurities are removed. Although the energy of the laser beam used in the exposure may be absorbed and the exposure process may not be performed properly, the pre-exposure area of the interface portion that passes immediately before the exposure process may be cleaned. By maintaining the state, the processing of the substrate can be suitably performed. The inert gas is a processing solution used in a coating and developing system, for example, an inert gas for a coating solution and a developing solution and does not contain oxygen, moisture, and organic substances, for example, nitrogen gas, argon, neon. And so on.Further, according to the present invention, the region before the exposure and the region after the exposure of the interface portion are blocked by the partition plate, so that the atmospheres can be prevented from interfering with each other. And the region after exposure can be maintained in an atmosphere peculiar to each region. In particular, when a region after exposure is kept at a low temperature, it is effective to provide a partition plate between the regions.
[0014]
In addition, an inert gas is supplied to the area after exposure by the second gas supply device, and the atmosphere in the area after exposure is exhausted by the second exhaust means. The atmosphere in the later region can be maintained in a clean state. In particular, when a chemically amplified resist that forms a circuit pattern by a catalytic reaction of an acid is used on a substrate, the acid is deactivated if impurities adhere to the substrate after the exposure treatment. By keeping the exposed area of the interface portion that passes immediately after the exposure processing in a clean state, the deactivation of the acid can be prevented, and the subsequent development processing can be suitably performed.
[0015]
In addition, since the inert gas is supplied to each region by a separate gas supply device, the region before the exposure and the region after the exposure can be maintained in an atmosphere unique to each region.
[0016]
Since each region can be maintained in a unique atmosphere, the second gas supply device may supply an inert gas having a temperature lower than the temperature of the inert gas supplied by the first gas supply device. Alternatively, an inert gas having a low oxygen concentration may be supplied.
[0017]
The present inventionAccording to the method, when the first gas supply device supplies, for example, an inert gas at room temperature to a region before exposure, the second gas supply device supplies an inert gas having a temperature lower than room temperature to thereby perform exposure. The atmosphere in the later region can be kept at a low temperature. In particular, when the above-mentioned chemically amplified resist has a property that a protecting group for protecting the hydroxyl group of the base polymer causes an elimination reaction even at room temperature, if the ambient temperature of the exposed region is higher than room temperature, the post-exposure The deprotection reaction of the protective group proceeds on the substrate during the transfer in the region, but by maintaining the exposed region at a low temperature, the deprotection reaction of the protector during the transfer can be suppressed. Therefore, a circuit pattern can be formed favorably. Further, by supplying an inert gas having a low oxygen concentration by the second gas supply device, the oxygen concentration in the atmosphere in the region after exposure can be kept low. Thereby, deactivation of the acid can be prevented.
[0020]
There is another partition plate that blocks an atmosphere between the processing unit and the interface unit, and the other partition plate is a first passage for transferring a substrate between the processing unit and the area before the exposure. An opening, and a second passage through which the substrate is transferred between the processing unit and the exposed area. The first passage is configured to open and close the first passage. One second shutter may be provided, and the second passage may include a second shutter that can open and close the second passage.
[0021]
By intercepting the processing section and the interface section by another partition plate, the pre-exposure area and the post-exposure area of the interface section maintained in a clean state by the supply of the inert gas as described above. The atmosphere in the processing section can be prevented from flowing into the inside. In addition, by providing the first shutter that can be opened and closed at the first passage opening, the first shutter can be opened and the substrate can be passed only when the substrate is transferred from the processing section to the area before exposure. . Further, by providing a second shutter that can be opened and closed at the second passage opening, the second shutter can be opened and the substrate can be passed only when the substrate is passed from the exposed area to the processing unit to the substrate. Therefore, it is possible to prevent the atmospheres of the processing section and the interface section from interfering with each other, and to maintain a clean area of the interface section before and after exposure.
[0022]
The temperature of the inert gas may be adjusted. By adjusting the inert gas to a predetermined temperature in this manner, the atmosphere in each region to which the inert gas is supplied can be maintained at the predetermined temperature.
[0023]
It is preferable that the pressure in the interface is set lower than the pressure in the exposure processing apparatus. According to this configuration, the pressure in the interface section is set to be lower than the pressure in the exposure processing apparatus, so that the atmosphere in the pre-exposure area and the post-exposure area of the interface section is strictly controlled. Into the exposed exposure apparatus.
The first gas supply device and the second gas supply device can individually control the supply amounts of the respective inert gases, and can individually control the pressures in the pre-exposure area and the post-exposure area. Is also good.
Further, a heating / cooling processing device for continuously performing a heating process and a cooling process on the substrate in the same device may be provided in the region before the exposure and the region after the exposure.
[0024]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a plan view of a coating and developing system 1 according to the present embodiment, and FIG. 2 is a front view of the coating and developing system 1.
[0025]
As shown in FIG. 1, the coating and developing processing system 1 carries, for example, 25 wafers W into and out of the coating and developing processing system 1 in the casing 1a in cassette units, A cassette station 2 for loading and unloading W, a processing station 3 as a processing unit in which various processing apparatuses for performing a predetermined process on the wafer W in a single-wafer manner in a coating and developing process are arranged in multiple stages, An interface unit 4 for transferring a wafer W to and from an exposure processing apparatus 5 provided adjacent to the processing system 1 is integrally connected.
[0026]
In the cassette station 2, a plurality of cassettes C can be placed in a row in the X direction (the vertical direction in FIG. 1) at predetermined positions on a cassette mounting table 6 serving as a mounting portion. A wafer carrier 7 that can be transported in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C is movable along the transfer path 8. Provided so that each cassette C can be selectively accessed.
[0027]
The wafer carrier 7 has an alignment function for positioning the wafer W. As will be described later, the wafer transfer body 7 is configured to be able to access the extension device 32 and the adhesion device 31 belonging to the third processing device group G3 on the processing station 3 side.
[0028]
In the processing station 3, a main transfer device 13 as a substrate transfer device is provided on the interface section 4 side, and three processing device groups G1, G2, G3 are arranged on the cassette station 2 side. In each of the processing device groups G1, G2, G3, various processing devices are arranged in multiple stages. The first processing unit group G1 is disposed on the front side of the development processing system 1 and the second processing unit group G2 is disposed on the back side of the development processing system 1 with the third processing unit group G3 interposed therebetween. ing. The main transfer unit 13 is capable of loading and unloading wafers W from and to various processing units described below arranged in the processing unit groups G1, G2, and G3, and is disposed on an interface unit described below. The wafer W can be loaded and unloaded to and from the processing device groups G4 and G5.
[0029]
In the first processing apparatus group G1, for example, as shown in FIGS. 2 and 3, resist coating apparatuses 17 and 18 for applying a resist liquid to the wafer W are arranged in two stages from the bottom. In the second processing unit group G2, development processing units 19 and 20 for developing the wafer W after the exposure processing are arranged in two stages from the bottom. The third processing unit group G3 includes a cooling device 30 for cooling the wafer W, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, an extension device 32 for holding the wafer W on standby, and a wafer after the development process. Cooling devices 33 and 34 for cooling W and post-baking devices 35 and 36 for heating the wafer W after the development process are stacked in, for example, seven stages from the bottom.
[0030]
The interface unit 4 includes a pre-exposure area S1 where a fourth processing apparatus group G4 having a first heat treatment apparatus, a first wafer transfer body 40 as a first transfer apparatus, and a second processing apparatus group G4. And a region S2 after exposure where a second wafer carrier 41 as a second carrier is disposed. Further, the atmosphere between the region S1 before exposure and the region S2 after exposure is blocked by the partition plate 42, so that the region S1 before exposure and the region S2 after exposure can have different atmospheres.
[0031]
In the fourth processing unit group G4, for example, the cooling device 50, the wafers W before the exposure process are mounted, the extension devices 51 and 52 for temporarily waiting, and the wafers W before the exposure process are heated and Heating / cooling processing devices 53, 54, 55, 56 (PREBAKE / COL in FIG. 3) for evaporating the solvent and then cooling it to a predetermined temperature are stacked in, for example, seven stages from the bottom.
[0032]
As shown in FIG. 5, the heating / cooling processing device 53 moves to a disk-shaped hot plate 58 for heating the wafer W on a base 53b in a casing 53a, and moves to a position above the hot plate 58. A cooling plate 59 is provided for receiving and cooling the wafer W from above the heating plate 58. The heating and cooling processes of the wafer W are continuously performed in the same apparatus, so that the heat history given to the wafer W by the heating can always be kept constant. The other heating / cooling processing devices 54 to 56 have the same configuration.
[0033]
The first wafer carrier 40 can freely move in the X and Y directions (vertical direction, left and right directions in FIG. 1) and Z direction (vertical direction) and rotate in the θ direction (rotation direction about the Z axis). The apparatus is configured to access various processing apparatuses belonging to the fourth processing apparatus group G4, the peripheral exposure apparatus 57, and the exposure processing apparatus 5, and to transfer the wafer W to each of them. Have been.
[0034]
In the fifth processing unit group G5, for example, the cooling device 60, the wafers W after the exposure process are placed, the extension devices 61 and 62 for temporarily waiting, and the wafers W after the exposure process are heated, and then heated to a predetermined temperature. Heating / cooling processing devices 63, 64, 65, 66 (PEB / COL in FIG. 3) and the like for cooling are stacked in, for example, seven stages from the bottom.
[0035]
The heating / cooling processing devices 63 to 66 have the same configuration as the heating / cooling processing device 53. The second wafer carrier 41 is configured in the same manner as the first wafer carrier 40, and accesses the various processing apparatuses and the exposure processing apparatus 5 belonging to the fifth processing apparatus group G5, respectively. Is configured to be able to transfer the wafer W to the wafer.
[0036]
A partition plate 70 is provided between the processing station 3 and the interface unit 4. The partition plate 70 blocks the atmosphere between the processing station 3 and the interface section 4. The partition plate 70 is provided with a first passage 71 at a position facing the extension devices 51 and 52 belonging to the fourth processing device group G4, and the main transfer device 13 is provided with the extension devices 51 and 52. 52, so that the wafer W can be carried into the pre-exposure area S1 from the processing station 3. Further, the first passage 71 is provided with a first shutter 72 that allows the first passage 71 to be opened and closed, and the first shutter 72 is opened only when the wafer W passes through the first passage 71. The first shutter 72 is opened, and at other times, the first shutter 72 is closed.
[0037]
A second passage port 73 is provided at a position of the partition plate 70 facing the extension devices 61 and 62 belonging to the fifth processing device group G5, and the main transport device 13 is provided with the extension devices 61 and 62. And the wafer W can be unloaded from the exposed area S2 to the processing station 3. Further, the second passage port 73 is provided with a second shutter 74 for opening and closing the second passage port 73, and the second shutter 74 is opened only when the wafer W passes through the second passage port 73. The second shutter 74 is opened, and at other times, the second shutter 74 is closed.
[0038]
Further, an exposure processing device 5 that performs exposure processing of the wafer W is provided adjacent to the interface unit 4. The exposure processing apparatus 5 is sealed by a casing 5a of the exposure processing apparatus 5, and is configured so that the atmosphere in the exposure processing apparatus 5 can be strictly controlled. In the casing 5a, on the area S1 side of the interface section 4 before the exposure, a passage port 75 for carrying the wafer W from the interface section 4 into the exposure processing apparatus 5 is provided. A shutter 76 for opening and closing the passage opening 75 is provided. In the casing 5a, on the side of the interface S4 after the exposure of the interface section 4, there is provided a passage opening 77 for carrying out the wafer W from the exposure processing apparatus 5 to the interface section 4. A shutter 78 for opening and closing the passage opening 77 is provided.
[0039]
A first gas supply device 80 for supplying an inert gas is provided above the region S1 before exposure of the interface unit 4, and a second gas supply device 81 is provided above the region S2 after exposure. In addition, an inert gas can be individually supplied from the first gas supply device 80 to the region S1 before exposure and from the second gas supply device 81 to the region S2 after exposure.
[0040]
Each of the gas supply devices 80 and 81 has a function of adjusting an inert gas supplied from a supply source (not shown) to a predetermined temperature and humidity, and ULPA filters 80a and 81a for removing fine particles in the inert gas. The regions S1 before exposure and the region S2 after exposure of the interface unit 4 are adjusted in temperature and humidity for each region, so that a purified inert gas can be supplied. In particular, the second gas supply device 81 is set so as to supply an inert gas having a temperature lower than the temperature of the inert gas supplied by the gas supply device 80 before exposure, and the region S1 before the exposure is used. There is a temperature difference in the atmosphere of the region S2 after the exposure.
[0041]
A first exhaust pipe 82 is provided below the area S1 before the exposure, and a second exhaust pipe 83 is provided below the area S2 after the exposure, and the atmosphere in each area is exhausted. It is configured as follows. Therefore, the inert gas supplied from the gas supply devices 80 and 81 into the respective regions is exhausted from the exhaust pipes 82 and 83 through the respective regions. Impurities, for example, oxygen, basic substances, ozone, water vapor, etc. are removed, and each region can be maintained in a clean atmosphere. The pressure in the region S1 before the exposure is adjusted by adjusting the supply amount of the inert gas of the first gas supply device 80, and the pressure in the region S2 after the exposure is adjusted by the inert gas of the second gas supply device 81. By adjusting the gas supply amount, each can be controlled to a predetermined pressure.
[0042]
Next, the process of the photolithography process performed in the coating and developing system 1 configured as described above will be described.
[0043]
First, before the processing of the wafer W is started, a predetermined temperature and humidity, for example, 23 ° C. and 45% are adjusted in the pre-exposure area S1 of the interface unit 4 by the first gas supply device 80, and fine particles are removed. The removed inert gas is supplied. Further, an inert gas adjusted to, for example, 15 ° C. and 50% and having fine particles removed therefrom is supplied into the exposed region S2 of the interface section 4 by the second gas supply device 81. Then, the atmosphere in each area is replaced with a clean atmosphere containing no fine particles and impurities such as oxygen and basic substances, and further, the inside of the exposed area S2 is made lower in temperature than the unexposed area S1, Thereafter, the state is maintained. At this time, the pressure P1 in the area S1 before the exposure, the pressure P3 in the area S2 after the exposure, and the pressure P3 in the exposure processing apparatus 5 are set so as to satisfy the relationship of P3> P1 = P2. 4 is prevented from flowing into the exposure processing apparatus 5. The pressure P0 in the clean room where the coating and developing processing system 1 is disposed is a pressure P1 in the area S1 before exposure, a pressure P2 in the area S2 after exposure, a pressure P3 in the exposure processing apparatus 5, and a cassette station. The pressure in the clean room, which is set lower than the pressure in the processing station 2 and the pressure in the processing station 3 and contains impurities, fine particles, etc., flows directly into the coating and developing processing system 1. To prevent that.
[0044]
When the processing of the wafer W is started, first, in the cassette station 2, the wafer carrier 7 takes out one unprocessed wafer W from the cassette C and carries it into the adhesion device 31 of the processing station 3.
[0045]
Next, in the adhesion device 31, the wafer W coated with an adhesion enhancer such as HMDS for improving the adhesion to the resist solution is transferred by the cooling device 30 by the main transfer device 13 and cooled to a predetermined temperature. Thereafter, the wafer W is transferred to the resist coating device 17 or 18 and subjected to a resist coating process. Then, the wafer W on which the resist film is formed is transferred to the extension device 51 or 52 by the main transfer device 13. At this time, when the first shutter 72 is temporarily opened and the wafer W is carried into the extension device 51 or 52, the first shutter 72 is closed again.
[0046]
In the pre-exposure region S1 maintained in a clean atmosphere, the wafer W is transferred from the extension device 51 or 52 to the heating / cooling device 53, 54, 55 or 56 (FIG. 3) by the first wafer carrier 40. PREBAKE / COL). In the heating / cooling devices 53, 54, 55 and 56, a heating / cooling process is performed. At this time, the heating / cooling process is performed in a single device such as a heating / cooling device 53 instead of sequentially performing the heating process and the cooling process in each of the individually provided devices. Since the time from when the heat treatment is performed to when the cooling process is performed can always be constant, the heat history given to the wafers W by the heating can be made the same between the wafers W.
[0047]
Thereafter, the wafer W is transferred from the heating / cooling processing device 53, 54, 55 or 56 to the peripheral exposure device 57 by the first wafer transfer body 40. After the peripheral portion of the wafer W is exposed by the peripheral exposure device 57, the wafer W is transferred to the exposure processing device 5 through the passage opening 75. At this time, when the shutter 76 is opened and the wafer W is transferred to the exposure processing apparatus 5, the shutter 76 is closed again.
[0048]
Next, in the exposure processing apparatus 5, a predetermined pattern is exposed on the resist film on the wafer W. A chemically amplified resist is used for the resist film, and the chemically amplified resist contains a base polymer insoluble in an alkali developing solution used in a later development process and an acid generator. As shown in FIG. 8, the exposed portion of the resist film 100 has an acid (H⁺) Occurs and a catalytic reaction occurs. The exposed wafer W is unloaded from the inside of the exposure processing apparatus 5 through the passage opening 77 by the second wafer carrier 41. At this time, when the shutter 78 is opened and the wafer W is carried out of the exposure processing apparatus 5, the shutter 78 is closed again.
[0049]
In the exposed area S2 maintained at a low temperature and in a clean atmosphere, the wafer W is transferred to the heating / cooling processing device 63, 64, 65 or 66 (PEB / COL in FIG. 3), Are sequentially heated and cooled. In PEB, which is heating after the exposure treatment, the acid is thermally diffused to promote a catalytic reaction in the exposed portion, and the protecting group protecting the hydroxyl group of the base polymer is removed. Therefore, the exposed portion becomes soluble in the alkali developing solution, and the unexposed portion remains insoluble in the alkali developing solution. Here, for example, a typical reaction model of a chemically amplified resist when the base polymer is polyvinylphenol is shown in [Chemical Formula 1].
[0050]
Embedded image

[0051]
Thereafter, the wafer W is transferred from the heating / cooling processing device 63, 64, 65 or 66 to the extension device 61 or 62 by the second wafer transfer body 41. Thereafter, the wafer W is unloaded from the extension device 61 or 62 by the main transfer device 13. At this time, when the second shutter 74 is opened and the wafer W is carried out of the exposure processing apparatus 5, the second shutter 74 is closed again.
[0052]
Thereafter, the wafer W is transferred to the developing device 19 or 20, where the exposed portion is removed and a predetermined circuit pattern is formed as shown in FIG. Then, the developed wafer W is transferred to the post-baking device 35 or 36 and heated, and then transferred to the cooling device 33 or 34 and cooled to a predetermined temperature. Then, the wafer is transferred to the extension device 32 of the third processing device group, and is returned to the cassette C of the cassette station 2 by the wafer transfer body 7 therefrom. Through the above steps, a series of photolithography steps is completed.
[0053]
According to the above embodiment, the first gas supply device 80 supplies the inert gas to the region S1 before the exposure, and the first exhaust unit 82 exhausts the atmosphere in the region S1 before the exposure. In addition, impurities such as oxygen and water vapor can be removed from the region S1 before the exposure, and a clean state can be maintained. Therefore, the wafer W can be transported in a clean atmosphere from the heating process (PREBAKE) immediately before the exposure process to the transition to the exposure process, and the adhesion of impurities can be prevented.
[0054]
In particular, after the wafer W on which the resist film is formed is subjected to the heat treatment, impurities are easily attached to the wafer W. If the impurities are attached to the wafer W during the exposure processing, The impurities may absorb the energy of the laser beam or the like used in the exposure, and the exposure process may not be performed properly. Is maintained in a clean state, exposure processing of the wafer W can be suitably performed, which greatly contributes to the yield of the wafer W. Further, the shorter the wavelength of the laser beam used in the exposure processing apparatus 5, the greater the effect of impurities becomes. Therefore, when a laser beam having a short wavelength, for example, 157 nm is used, the effect is large.
[0055]
In addition, an inert gas is supplied to the exposed area S2 by the second gas supply device 81, and the atmosphere of the exposed area S2 is exhausted by the second exhaust pipe 83. Similarly, the atmosphere in the exposed region S2 can be maintained in a clean state.
[0056]
In particular, when a chemically amplified resist that forms a circuit pattern by a catalytic reaction of an acid is used on the wafer W, if impurities (for example, a basic substance) adhere to the wafer W after the exposure processing, the acid is lost. However, by maintaining the exposed area S2 of the interface portion 4 passing immediately after the exposure processing in a clean state, the deactivation of the acid is prevented, and the subsequent development processing is suitably performed. Will be able to do it.
[0057]
In addition, an inert gas is supplied to each area by a separate gas supply device, and the area S1 before the exposure and the area S2 after the exposure are cut off by the partition plate 42, so that the atmospheres of the areas interfere with each other. It is possible to prevent the areas S1 and S2 before exposure and the area S2 after exposure from being maintained in an atmosphere unique to each area. Therefore, the atmosphere of the wafer path before exposure and the atmosphere of the wafer path after exposure in the interface portion can be individually controlled.
[0058]
In particular, since the inert gas whose temperature is lower than the normal temperature is supplied by the second gas supply device 81, the inside of the region S2 after exposure can be maintained at a low temperature. If the aforementioned chemically amplified resist has such a property that the protecting group for protecting the hydroxyl group of the base polymer causes an elimination reaction even at room temperature, if the temperature atmosphere of the region S2 after exposure is room temperature or higher, the post-exposure While the removal reaction of the protective group proceeds on the wafer W during the transfer in the region S2, the release reaction of the protector during the transfer can be suppressed by maintaining the exposed region S2 at a low temperature. it can. For example, in the heat treatment (PEB) performed after exposure, the catalytic reaction of the acid can be accelerated at a stretch to allow the elimination reaction of the protective group to proceed appropriately, thereby completing the polarity change of the exposed portion and the unexposed portion. Therefore, the formation of the circuit pattern can be performed favorably, and the subsequent development processing can be suitably performed.
[0059]
Since both the first gas supply device 80 and the second gas supply device 81 have a temperature adjusting function, the region S1 before exposure and the region S2 after exposure can be maintained at predetermined temperatures.
[0060]
By setting the pressure P1 in the region S1 before exposure and the pressure P2 in the region S2 after exposure to be lower than the pressure P3 in the exposure processing apparatus 5, the atmosphere in the region S1 before exposure and the region S2 after exposure are set. Can be prevented from flowing into the exposure processing apparatus 5 whose atmosphere is strictly controlled.
[0061]
Although an example of the embodiment of the present invention has been described, the present invention is not limited to this example, and can take various aspects. It is preferable that gas supply devices are provided above the cassette station 2 and the processing station 2, respectively, and exhaust pipes are provided below the gas supply devices, respectively, so that the insides of the cassette station 2 and the processing station 3 are maintained in a clean state. Then, the entire coating and developing system 1 can be maintained in a clean state, and a series of photolithography steps can be suitably performed.
[0062]
Further, in order to save the consumption of the inert gas, for example, a part or all of the inert gas exhausted from each area is collected, and then purified and sent to each of the gas supply devices 80 and 81 to be inert. It may be reused as a gas.
[0063]
Although the above-described embodiment relates to a coating and developing system for a wafer W in a photolithography process of a semiconductor wafer device manufacturing process, the present invention relates to a coating and developing system for a substrate other than a semiconductor wafer, for example, an LCD substrate. It can also be applied to
[0064]
【The invention's effect】
The present inventionAccording to the method, an inert gas is supplied into the coating and developing treatment system, so that molecular-level impurities such as oxygen, basic substances, ozone, and organic substances can be prevented from adhering to the substrate. The processing of the substrate can be suitably performed without any problem, and the yield can be improved. Further, the atmosphere of the substrate path before exposure and the atmosphere of the substrate path after exposure in the interface portion can be individually controlled.
[0065]
In particular, when a chemically amplified resist is used, it is possible to prevent a situation in which an acid generated during exposure reacts with a basic substance in the air and is deactivated. In addition, since the inside of the exposed area can be maintained at a low temperature, the elimination reaction of the protecting group during transportation can be suppressed. Therefore, subsequent development processing can be suitably performed.
[0066]
The present inventionAccording to this, the area before exposure and the area after exposure can be maintained in a clean and unique atmosphere of each area,AlsoEach region can be maintained at a predetermined temperature.furtherThe atmosphere in the pre-exposure area and the post-exposure area can be prevented from flowing into the exposure processing apparatus in which the atmosphere is strictly controlled.
[Brief description of the drawings]
FIG. 1 is a plan view showing the appearance of a coating and developing system according to an embodiment.
FIG. 2 is a front view of the coating and developing processing system of FIG.
FIG. 3 is an explanatory view of a longitudinal section of a processing station.
FIG. 4 is an explanatory diagram of a longitudinal sectional view of an interface unit.
5 is a cross-sectional view schematically showing a heating / cooling processing device in the coating and developing processing system 1 of FIG.
FIG. 6 is an explanatory diagram when the state of the flow of the inert gas supplied to the interface unit is viewed from the side of the coating and developing processing system.
FIG. 7 is an explanatory view of a vertical section showing a state of a flow of an inert gas supplied to an interface unit.
FIG. 8 is an explanatory diagram showing a state of a resist film on which a circuit pattern is exposed.
FIG. 9 is an explanatory diagram showing a state of a resist film after development.
[Explanation of symbols]
1 Coating and developing system
4 Interface section
5 Exposure processing equipment
40 First Wafer Carrier
41 Second wafer carrier
42,70 divider
71 1st passage
72 First shutter
73 Second Passage
74 Second shutter
80 First gas supply device
81 Second gas supply device
82 First exhaust pipe
83 Second exhaust pipe
S1 Area before exposure
S2 Area after exposure
W wafer

Claims (7)

At least a coating processing apparatus for forming a coating film on a substrate, a developing processing apparatus for developing the substrate, a heat processing apparatus for performing heat treatment on the substrate, and a coating processing apparatus, a developing processing apparatus, and a heat processing apparatus. A processing unit having a substrate transfer device for loading and unloading substrates,
An interface for performing a coating and developing process provided in a casing, wherein an interface unit on which a substrate is transported along a path between the processing unit and an exposure processing apparatus that performs an exposure process on the substrate,
The inside of the interface portion is divided into two regions, a region before exposure and a region after exposure, by a partition plate for shielding the atmosphere,
A first heat treatment apparatus for performing heat treatment on the substrate before exposure and a first transfer apparatus for transferring the substrate before exposure are arranged in a region of the interface section before exposure ,
A second heat treatment apparatus for performing a heat treatment on the exposed substrate and a second transfer apparatus for transferring the exposed substrate are disposed in the exposed area of the interface section ,
A first gas supply device for supplying an inert gas to the region before the exposure,
First exhaust means for exhausting the atmosphere in the region before the exposure,
A second gas supply device for supplying an inert gas to the region after the exposure,
And a second exhaust means for exhausting the atmosphere in the area after the exposure. The coating and developing method according to claim 1, wherein the second gas supply device supplies an inert gas having a temperature lower than a temperature of the inert gas supplied by the first gas supply device. Processing system. 3. The coating and developing system according to claim 1, wherein the second gas supply device supplies an inert gas having a low oxygen concentration. Having another partition plate for blocking an atmosphere between the processing unit and the interface unit;
  The other partition plate has a first passage port for transferring the substrate between the processing unit and the area before the exposure, and a second passage port for transferring the substrate between the processing unit and the area after the exposure. With a passage of
  The first passage has a first shutter that allows the first passage to be opened and closed,
  4. The coating and developing system according to claim 1, wherein said second passage has a second shutter for opening and closing said second passage. The coating and developing system according to any one of claims 1, 2, 3, and 4, further comprising a temperature adjusting means for adjusting the temperature of the inert gas. The first gas supply device and the second gas supply device can individually control the supply amount of each inert gas, and can individually control the pressure in the region before exposure and the pressure in the region after exposure. The coating and developing system according to any one of claims 1 to 5, wherein: 2. A heating / cooling apparatus for continuously performing a heating process and a cooling process on a substrate in the same device in the region before the exposure and the region after the exposure, respectively. 7. The coating and developing system according to any one of claims 6 to 6.

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