JP2001291583A - Organic el element and manufacturing method of organic el element - Google Patents
Organic el element and manufacturing method of organic el elementInfo
- Publication number
- JP2001291583A JP2001291583A JP2000105997A JP2000105997A JP2001291583A JP 2001291583 A JP2001291583 A JP 2001291583A JP 2000105997 A JP2000105997 A JP 2000105997A JP 2000105997 A JP2000105997 A JP 2000105997A JP 2001291583 A JP2001291583 A JP 2001291583A
- Authority
- JP
- Japan
- Prior art keywords
- organic
- ink composition
- ink
- bank
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000203 mixture Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims description 20
- 239000002904 solvent Substances 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 abstract description 17
- 239000010408 film Substances 0.000 abstract description 16
- 239000007787 solid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 239000005871 repellent Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000009472 formulation Methods 0.000 description 5
- 238000007641 inkjet printing Methods 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- UOHMMEJUHBCKEE-UHFFFAOYSA-N prehnitene Chemical compound CC1=CC=C(C)C(C)=C1C UOHMMEJUHBCKEE-UHFFFAOYSA-N 0.000 description 3
- 230000002940 repellent Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 125000002490 anilino group Chemical class [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】ディスプレイ、表示光源など
に用いられる電気的発光素子である有機ＥＬ素子および
その製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic EL device which is an electric light emitting device used for a display, a display light source and the like, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】近年液晶ディスプレイに替わる自発発光
型ディスプレイとして有機物を用いた発光素子の開発が
加速している。有機物を用いた有機ＥＬ（エレクトロル
ミネッセンス）素子としては、Ａｐｐｌ．Ｐｈｙｓ．Ｌ
ｅｔｔ．５１（１２）、２１Ｓｅｐｔｅｍｂｅｒ １９
８７の９１３ページから示されているように低分子を蒸
着法で成膜する方法と、Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔ
ｔ．７１（１）、７ Ｊｕｌｙ １９９７の３４ページ
から示されているように高分子を塗布する方法が主に報
告されている。2. Description of the Related Art In recent years, the development of light-emitting elements using organic materials as spontaneous light-emitting displays replacing liquid crystal displays has been accelerated. As an organic EL (electroluminescence) element using an organic substance, Appl. Phys. L
ett. 51 (12), 21 September 19
87, page 913, a method of depositing a low molecule by a vapor deposition method, and the method of Appl. Phys. Let
t. As reported from 71 (1), 7 July 1997, p. 34, a method of applying a polymer is mainly reported.
【０００３】有機ＥＬ素子において、カラー化の手段と
しては低分子系材料の場合、マスク越しに異なる発光材
料を所望の画素上に蒸着し形成する方法が行われてい
る。一方、高分子系材料については、微細かつ容易にパ
ターニングができることからインクジェット法を用いた
カラー化が注目されている。インクジェット法による有
機ＥＬ素子の形成としては方法は、例えば、特開平７−
２３５３７８、特開平１０−１２３７７、特開平１０−
１５３９６７、特開平１１−４０３５８、特開平１１−
５４２７０、特開平１１−３３９９５７に開示されてい
る。In the case of organic EL devices, as a means for colorization, in the case of a low-molecular material, a method of vapor-depositing and forming a different luminescent material on a desired pixel through a mask has been used. On the other hand, for polymer materials, colorization using an ink-jet method has attracted attention because it can be finely and easily patterned. A method for forming an organic EL element by an ink-jet method is described in, for example,
235378, JP-A-10-12377, JP-A-10-
153967, JP-A-11-40358, JP-A-11-
54270 and JP-A-11-339957.
【０００４】また、素子構造という観点からは、発光効
率、耐久性を向上させるために、正孔注入／輸送層を陽
極と発光層の間に形成することが多い（Ａｐｐｌ．Ｐｈ
ｙｓ．Ｌｅｔｔ．５１、２１ Ｓｅｐｔｅｍｂｅｒ １
９８７の９１３ページ）。従来、バッファ層や正孔注入
／輸送層としては導電性高分子、例えばポリチオフェン
誘導体やポリアニリン誘導体（Ｎａｔｕｒｅ，３５７，
４７７、１９９２）を用い、スピンコート等の塗布法に
より膜を形成する。低分子系材料においては正孔注入／
輸送層として、フェニルアミン誘導体を蒸着で形成する
ことが報告されている。Further, from the viewpoint of the element structure, a hole injection / transport layer is often formed between the anode and the light emitting layer in order to improve the luminous efficiency and the durability (Appl. Ph.
ys. Lett. 51, 21 September 1
987, page 913). Conventionally, a conductive polymer such as a polythiophene derivative or a polyaniline derivative (Nature, 357,
477, 1992) to form a film by a coating method such as spin coating. Hole injection /
It has been reported that a phenylamine derivative is formed by vapor deposition as a transport layer.
【０００５】[0005]
【発明が解決しようとする課題】有機薄膜材料を無駄に
せず、簡便にかつ微細パターニング製膜する手段として
インクジェット方式は大変有効である。The ink-jet method is very effective as a means for easily and finely patterning a film without wasting the organic thin film material.
【０００６】しかしながら、インクジェット法による薄
膜製膜においては、十分に膜厚を制御し、均一な薄膜を
形成することが困難であった。However, in the thin film formation by the ink jet method, it is difficult to control the film thickness sufficiently and to form a uniform thin film.
【０００７】例えば、バンクで仕切られた領域に液滴を
塗布して膜を形成する場合、バンクが撥インク性を有し
ていても、乾燥過程で膜が凹に（中央が薄く、周囲が厚
く）なることや、時に未塗布領域などの膜厚ムラを生じ
ることがあった。For example, when a film is formed by applying liquid droplets to a region partitioned by a bank, even if the bank has ink repellency, the film becomes concave during the drying process (the center is thin and the periphery is thin). Thicker) and sometimes unevenness in film thickness such as uncoated areas.
【０００８】本発明は、上記問題点に鑑みてなされたも
ので、その課題とするところは、画素内で膜厚が制御さ
れた、均一な有機ＥＬ薄膜を得るための、インクジェッ
ト法による有機ＥＬ素子の製造方法ならびに有機ＥＬ素
子を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide an organic EL device by an ink-jet method for obtaining a uniform organic EL thin film having a controlled thickness within a pixel. An object of the present invention is to provide a device manufacturing method and an organic EL device.
【０００９】[0009]
【課題を解決するための手段】これらの課題は下記
（１）〜（９）の本発明によって達成される。These objects are attained by the present invention of the following (1) to (9).
【００１０】（１）有機ＥＬ材料を含むインク組成物を
インク吐出法により同一画素内に少なくとも２回以上吐
出して製膜することを特徴とする有機ＥＬ素子の製造方
法。(1) A method for manufacturing an organic EL device, comprising forming a film by discharging an ink composition containing an organic EL material into the same pixel at least twice by an ink discharging method.
【００１１】（２）次のインク組成物の吐出が、前回の
吐出した液滴が乾燥後に行われる事を特徴とする上記
（１）の有機ＥＬ素子の製造方法。(2) The method for producing an organic EL device according to the above (1), wherein the next ejection of the ink composition is performed after drying the previously ejected droplets.
【００１２】（３）有機ＥＬ材料が発光材料であること
を特徴とする上記（１）又は（２）の有機ＥＬ素子の製
造方法。(3) The method for producing an organic EL device according to the above (1) or (2), wherein the organic EL material is a light emitting material.
【００１３】（４）各回のインク組成物の吐出量が、異
なることを特徴とする上記（１）乃至（３）のいずれか
の有機ＥＬ素子の製造方法。(4) The method for producing an organic EL device according to any one of (1) to (3), wherein the discharge amount of the ink composition is different each time.
【００１４】（５）インク組成物をバンクで区画された
領域内に吐出し、ｎ回目（ｎは吐出回数）の吐出ドット
径が、バンク径に比べて等しいかもしくは小さいことを
特徴とする上記（１）乃至（４）のいずれの有機ＥＬ素
子の製造方法。(5) The ink composition is ejected into a region defined by a bank, and the ejection dot diameter at the n-th time (n is the number of ejections) is equal to or smaller than the bank diameter. (1) The method for manufacturing an organic EL device according to any one of (1) to (4).
【００１５】（６）ｎ回目の吐出インク組成物の溶質濃
度が、（ｎ−1）回目の吐出インクの溶質濃度よりも等
しいかもしくは低いことを特徴とする上記（４）又は
（５）の有機ＥＬ素子の製造方法。(6) The method according to the above (4) or (5), wherein the solute concentration of the n-th discharge ink composition is equal to or lower than the solute concentration of the (n-1) -th discharge ink. A method for manufacturing an organic EL device.
【００１６】（７）ｎ回目の吐出インク組成物が所定の
溶質を含まないことを特徴とする上記（６）の有機ＥＬ
素子の製造方法。(7) The organic EL according to the above (6), wherein the n-th ejection ink composition does not contain a predetermined solute.
Device manufacturing method.
【００１７】（８）ｎ回目に吐出される溶質を含まない
インク組成物が、（ｎ−1）回目までの吐出インクに含
まれる溶媒であることを特徴とする上記（７）の有機Ｅ
Ｌ素子の製造方法。(8) The organic E according to (7), wherein the ink composition containing no solute discharged at the n-th time is a solvent contained in the ink discharged up to the (n-1) -th time.
Manufacturing method of L element.
【００１８】（９）上記（１）乃至（８）のいずれかの
方法を用いて得られた有機ＥＬ素子。(9) An organic EL device obtained by using any one of the above (1) to (8).
【００１９】[0019]
【発明の実施の形態】以下、本発明の実施形態について
詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail.
【００２０】インクジェット方式による有機ＥＬ素子の
製造方法とは、素子を構成する正孔注入／輸送材料なら
びに発光材料を溶媒に溶解または分散させたインク組成
物を、インクジェットヘッドから吐出させて透明電極基
板上にパターニング塗布し、正孔注入／輸送層ならびに
発光材層をパターン形成する方法である。The method of manufacturing an organic EL device by an ink-jet method means that an ink composition obtained by dissolving or dispersing a hole injecting / transporting material and a luminescent material constituting a device in a solvent is discharged from an ink-jet head to a transparent electrode substrate. In this method, a hole injection / transport layer and a light-emitting material layer are formed by patterning.
【００２１】図１はインクジェット方式による有機ＥＬ
素子の製造に用いられる基板の断面図を示したものであ
る。ガラス基板１０あるいはＴＦＴ付きの基板上にＩＴ
Ｏ１１が透明画素電極としてパターンニングされ、画素
を隔てる領域にＳｉＯ2１２と撥インク性あるいは撥イ
ンク化された有機物からなる隔壁（以下バンクと称す
る）１３を設けた構造である。バンクの形状つまり画素
の開口形は、円形、楕円、四角、ストライプいづれの形
状でも構わないが、インク組成物には表面張力があるた
め、四角形の角部は丸みを帯びているほうが好ましい。FIG. 1 shows an organic EL device using an ink jet method.
FIG. 2 is a cross-sectional view of a substrate used for manufacturing an element. IT on a glass substrate 10 or a substrate with TFT
O11 is patterned as a transparent pixel electrode, and has a structure in which SiO 2 12 and a partition wall (hereinafter referred to as a bank) 13 made of an ink-repellent or ink-repellent organic material are provided in a region separating the pixels. The shape of the bank, that is, the shape of the opening of the pixel may be any of a circle, an ellipse, a square, and a stripe. However, since the ink composition has a surface tension, it is preferable that the corner of the square is rounded.
【００２２】図２〜６において、インクジェット方式に
よる正孔注入／輸送層＋発光層の積層構造を有する素子
の製造工程を示す。2 to 6 show steps of manufacturing an element having a laminated structure of a hole injection / transport layer + a light emitting layer by an ink jet method.
【００２３】正孔注入／輸送材料を含むインク組成物１
５をインクジェットヘッド１４から吐出し、パターン塗
布する（図２）。塗布後、溶媒除去および／または熱処
理、あるいは窒素ガスなどのフローにより正孔注入／輸
送層１６を形成する（図３）。Ink composition 1 containing hole injecting / transporting material
5 is ejected from the ink-jet head 14 and pattern-applied (FIG. 2). After the application, the hole injection / transport layer 16 is formed by solvent removal and / or heat treatment, or a flow of nitrogen gas or the like (FIG. 3).
【００２４】続いて発光材料を含むインク組成物１７を
正孔注入／輸送層上に塗布し（図４）、溶媒除去および
／または熱処理あるいは窒素ガスなどのフローにより発
光層１８を形成する（図５）。Subsequently, an ink composition 17 containing a luminescent material is applied on the hole injecting / transporting layer (FIG. 4), and a luminescent layer 18 is formed by solvent removal and / or heat treatment or a flow of nitrogen gas or the like (FIG. 4). 5).
【００２５】Ｃａ、Ｍｇ、Ａｇ、Ａｌ、Ｌｉ等の金属を
用い、蒸着法およびスパッタ法等により陰極１９を形成
する。さらに素子の保護を考え、エポキシ樹脂、アクリ
ル樹脂、液状ガラス等により封止層２０を形成し、素子
が出来上がる（図６）。Using a metal such as Ca, Mg, Ag, Al, and Li, the cathode 19 is formed by a vapor deposition method, a sputtering method, or the like. Further, in consideration of protection of the element, the sealing layer 20 is formed of epoxy resin, acrylic resin, liquid glass, or the like, and the element is completed (FIG. 6).
【００２６】しかし、インクジェット法による膜形成に
おいては、図７に示したように、（Ａ）画素内中央部で
膜が薄く、バンク裾で厚くなる、（Ｂ）未塗布領域がで
きる、ことがある。However, in the film formation by the ink-jet method, as shown in FIG. 7, (A) the film is thinner at the central portion in the pixel, the film is thicker at the foot of the bank, and (B) an uncoated region is formed. is there.
【００２７】そこで、膜厚が所望の厚さに最適化し、均
一な薄膜を得るためには、図８、９に示すように、同一
画素に少なくとも２回以上のインク組成物を画素内に塗
布し製膜することが好ましい。さらに好ましくは、最後
に吐出する液滴のドット径が、バンクのドット径以下で
あること、および／または最後に吐出するインク組成物
の有機ＥＬ材料濃度が、その前に吐出したインク組成物
の有機ＥＬ材料濃度以下であることがよい。さらに好ま
しくは、最後に吐出するインクが有機ＥＬ材料を含まな
い溶媒である事が望ましい。特に、画素内に存在する材
料量を変えずに、未塗布領域を塗膜し、膜厚を整えるの
に有効である。Therefore, in order to optimize the film thickness to a desired thickness and obtain a uniform thin film, the same pixel is coated with the ink composition at least twice or more as shown in FIGS. It is preferable to form a film. More preferably, the dot diameter of the droplet to be ejected last is equal to or smaller than the dot diameter of the bank, and / or the organic EL material concentration of the ink composition to be ejected last is lower than that of the ink composition ejected before. The concentration is preferably lower than the organic EL material concentration. More preferably, it is desirable that the ink ejected last is a solvent containing no organic EL material. In particular, it is effective to coat an uncoated region and change the film thickness without changing the amount of material existing in the pixel.
【００２８】実際の液滴量は、画素の大きさ、目的とす
る膜厚およびインク組成物の材料濃度にあわせて適宜調
製すればよい。The actual amount of liquid droplets may be appropriately adjusted according to the size of the pixel, the desired film thickness, and the material concentration of the ink composition.
【００２９】以下、実施例を参照して本発明を更に、具
体的に説明するが、本発明はこれらに制限されるもので
はない。Hereinafter, the present invention will be described more specifically with reference to Examples, but the present invention is not limited thereto.
【００３０】（実施例１）図１０に本実施例に用いた基
板を示す。(Embodiment 1) FIG. 10 shows a substrate used in this embodiment.
【００３１】ＩＴＯ５１がパターニングされたガラス基
板５０上にバンクをフォトリソグラフィーにより、ポリ
イミド５３およびＳｉＯ2５２の積層で形成したもので
ある。バンク径（ ＳｉＯ2の開口径）は２８μｍ、高さ
が２μｍである。ポリイミドバンクの開口は４４μｍで
ある。これらの画素が７０．５μｍピッチで配置されて
いる基板である。A bank is formed by laminating polyimide 53 and SiO 2 52 by photolithography on a glass substrate 50 on which ITO 51 is patterned. The bank diameter (opening diameter of SiO 2 ) is 28 μm and the height is 2 μm. The opening of the polyimide bank is 44 μm. This is a substrate on which these pixels are arranged at a pitch of 70.5 μm.
【００３２】正孔注入／輸送材料インク組成物を塗布す
る前に、大気圧プラズマ処理によりポリイミドバンク５
３を撥インク処理した。大気圧プラズマ処理の条件は、
大気圧下で、パワー３００Ｗ、電極−基板間距離１ｍ
ｍ、酸素プラズマ処理では、酸素ガス流量８０ｃｃｍ、
ヘリウムガス流量１０ＳＬＭ、テーブル搬送速度１０ｍ
ｍ/ｓで行い、続けてＣＦ4プラズマ処理では、 ＣＦ4ガ
ス流量１００ｃｃｍ、ヘリウムガス流量１０ＳＬＭ、テ
ーブル搬送速度５ｍｍ/ｓで行った。Before applying the hole injection / transport material ink composition, the polyimide bank 5 is subjected to an atmospheric pressure plasma treatment.
No. 3 was subjected to an ink-repellent treatment. The conditions of the atmospheric pressure plasma treatment are as follows:
Under atmospheric pressure, power 300W, distance between electrode and substrate 1m
m, oxygen plasma processing, oxygen gas flow rate 80 ccm,
Helium gas flow rate 10SLM, table transfer speed 10m
m / s, and the subsequent CF 4 plasma treatment was performed at a CF 4 gas flow rate of 100 ccm, a helium gas flow rate of 10 SLM, and a table transfer speed of 5 mm / s.
【００３３】正孔注入／輸送層用インク組成物として表
１に示した処方のものを調製した。The ink compositions for the hole injecting / transporting layer having the formulations shown in Table 1 were prepared.
【００３４】[0034]
【表１】 [Table 1]
【００３５】基板の表面処理後、表１に示した正孔注入
／輸送層用インク組成物をインクジェットプリント装置
のヘッド（エプソン社製ＭＪ−９３０Ｃ）から１５ｐｌ
吐出しパターン塗布。真空中（１ｔｏｒｒ）、室温、２
０分という条件で溶媒を除去した。続けて、同じ正孔注
入／輸送層用インク組成物を１５ｐｌ吐出しパターン塗
布した。真空中（１ｔｏｒｒ）、室温、２０分という条
件で溶媒を除去し、大気中、２００℃（ホットプレート
上）、１０分の熱処理により正孔注入／輸送を形成し
た。これにより、膜厚５０ｎｍの平坦な正孔注入／輸送
層を得た。After the surface treatment of the substrate, 15 pl of the ink composition for hole injection / transport layer shown in Table 1 was applied from the head of an ink jet printing apparatus (MJ-930C manufactured by Epson Corporation).
Discharge pattern application. Under vacuum (1 torr), room temperature, 2
The solvent was removed under the condition of 0 minutes. Subsequently, the same ink composition for a hole injecting / transporting layer was ejected in an amount of 15 pl to apply a pattern. The solvent was removed under vacuum (1 torr) at room temperature for 20 minutes, and a hole injection / transport was formed by heat treatment in air at 200 ° C. (on a hot plate) for 10 minutes. As a result, a flat hole injection / transport layer having a thickness of 50 nm was obtained.
【００３６】発光層用インク組成物として、表２に示し
た処方のものを調製した。As the ink composition for the light emitting layer, one having the formulation shown in Table 2 was prepared.
【００３７】[0037]
【表２】 [Table 2]
【００３８】表２に示した化合物１〜３を下記に示す。Compounds 1 to 3 shown in Table 2 are shown below.
【００３９】[0039]
【化１】 表２に示した１％（ｗｔ／ｖｏｌ）濃度の発光層用イン
ク組成物をインクジェットプリント装置のヘッド（エプ
ソン社製ＭＪ−９３０Ｃ）から、Ｎ2ガスをフローしな
がら２０ｐｌ吐出しパターン製膜した。Embedded image The ink composition for a light emitting layer having a concentration of 1% (wt / vol) shown in Table 2 was ejected from a head of an ink jet printing apparatus (MJ-930C manufactured by Epson Corporation) at 20 pl while flowing N 2 gas to form a pattern. .
【００４０】次に、表２のインク組成物に用いた溶媒で
ある１，２，３，４−テトラメチルベンゼンだけを、
Ｎ2ガスをフローしながら１５ｐｌパターン塗布した。
これにより、膜厚７０ｎｍの平坦な緑色発光層を得た。Next, only 1,2,3,4-tetramethylbenzene, which is a solvent used in the ink composition shown in Table 2, was used.
A 15 pl pattern was applied while flowing N 2 gas.
Thus, a flat green light emitting layer having a thickness of 70 nm was obtained.
【００４１】陰極として、Ｃａを蒸着で２０ｎｍ、Ａｌ
をスパッタで２００ｎｍで形成し、最後にエポキシ樹脂
により封止を行った。As a cathode, 20 nm of Ca is deposited by evaporation, and
Was formed to a thickness of 200 nm by sputtering, and finally sealed with an epoxy resin.
【００４２】選られた素子は均一な緑色発光を示した。The selected device showed uniform green emission.
【００４３】（実施例２）正孔注入／輸送層までは、実
施例１と同様に形成した。(Example 2) A hole injection / transport layer was formed in the same manner as in Example 1.
【００４４】発光層用インク組成物として、表３に示し
た処方のものを調製した。As the ink composition for the light emitting layer, one having the formulation shown in Table 3 was prepared.
【００４５】[0045]
【表３】 [Table 3]
【００４６】表３に示した化合物１及び２は、実施例１
で用いたものと同様である。化合物４は下記構造を有す
る化合物である。Compounds 1 and 2 shown in Table 3 were prepared in Example 1
It is the same as that used in. Compound 4 is a compound having the following structure.
【００４７】[0047]
【化２】 表３に示した１％（ｗｔ／ｖｏｌ）濃度の発光層用イン
ク組成物をインクジェットプリント装置のヘッド（エプ
ソン社製ＭＪ−９３０Ｃ）から、Ｎ2ガスをフローしな
がら１５ｐｌ吐出しパターン製膜した。Embedded image The ink composition for a light emitting layer having a concentration of 1% (wt / vol) shown in Table 3 was ejected at a flow rate of 15 pl from an ink jet printing apparatus head (MJ-930C manufactured by Epson Corporation) while flowing N 2 gas to form a pattern. .
【００４８】次に、表３のインク組成物において、濃度
が０．２５％のインク組成物を調製し、 Ｎ2ガスをフロ
ーしながら１５ｐｌパターン塗布した。これにより、膜
厚５０ｎｍの平坦な青色発光層を得た。Next, an ink composition having a concentration of 0.25% was prepared from the ink compositions shown in Table 3, and a 15 pl pattern was applied while flowing N 2 gas. Thus, a flat blue light emitting layer having a thickness of 50 nm was obtained.
【００４９】陰極として、Ｃａを蒸着で２０ｎｍ、Ａｌ
をスパッタで２００ｎｍで形成し、最後にエポキシ樹脂
により封止を行った。As a cathode, 20 nm of Ca is deposited by evaporation, and
Was formed to a thickness of 200 nm by sputtering, and finally sealed with an epoxy resin.
【００５０】選られた素子は均一な青色発光を示した。The selected device showed uniform blue emission.
【００５１】（実施例３）正孔注入／輸送層までは、実
施例１と同様に形成した。Example 3 A hole injection / transport layer was formed in the same manner as in Example 1.
【００５２】発光層用インク組成物として、表４に示し
た処方のものを調製した。The ink composition for the light emitting layer was prepared according to the formulation shown in Table 4.
【００５３】[0053]
【表４】 [Table 4]
【００５４】表４に示した化合物１、２は、実施例１で
用いたものと同様である。化合物５は下記構造を有する
化合物である。Compounds 1 and 2 shown in Table 4 are the same as those used in Example 1. Compound 5 is a compound having the following structure.
【００５５】[0055]
【化３】 表４に示した１％（ｗｔ／ｖｏｌ）濃度の発光層用イン
ク組成物をインクジェットプリント装置のヘッド（エプ
ソン社製ＭＪ−９３０Ｃ）から、Ｎ2ガスをフローしな
がら１５ｐｌ吐出しパターン製膜した。Embedded image The ink composition for a light emitting layer having a concentration of 1% (wt / vol) shown in Table 4 was ejected at a flow rate of 15 pl from a head of an inkjet printing apparatus (MJ-930C manufactured by Epson Corporation) while flowing N 2 gas to form a pattern. .
【００５６】次に、表４のインク組成物において、濃度
が０．５％のインク組成物を調製し、 Ｎ2ガスをフロー
しながら１０ｐｌパターン塗布した。これにより、膜厚
７０ｎｍの平坦な赤色発光層を得た。Next, an ink composition having a concentration of 0.5% was prepared from the ink compositions shown in Table 4, and a 10 pl pattern was applied while flowing N 2 gas. Thus, a flat red light emitting layer having a thickness of 70 nm was obtained.
【００５７】陰極として、Ｃａを蒸着で２０ｎｍ、Ａｌ
をスパッタで２００ｎｍで形成し、最後にエポキシ樹脂
により封止を行った。As a cathode, 20 nm of Ca is deposited by evaporation,
Was formed to a thickness of 200 nm by sputtering, and finally sealed with an epoxy resin.
【００５８】選られた素子は均一な赤色発光を示した。The selected devices showed uniform red emission.
【００５９】（実施例５）正孔注入／輸送層までは、実
施例１と同様に形成した。(Example 5) Up to the hole injecting / transporting layer, it was formed in the same manner as in Example 1.
【００６０】発光層用インク組成物として、表５に示し
た処方のものを調製した。As the ink composition for the light emitting layer, one having the formulation shown in Table 5 was prepared.
【００６１】[0061]
【表５】 [Table 5]
【００６２】表５に示した化合物１、２、４は、実施例
１、２で用いたものと同様である。表５に示した０．５
％（ｗｔ／ｖｏｌ）濃度の発光層用インク組成物をイン
クジェットプリント装置のヘッド（エプソン社製ＭＪ−
９３０Ｃ）から、Ｎ2ガスをフローしながら１５ｐｌ吐
出しパターン製膜した。Compounds 1, 2 and 4 shown in Table 5 are the same as those used in Examples 1 and 2. 0.5 shown in Table 5
% (Wt / vol) concentration of the ink composition for a light emitting layer in a head of an inkjet printing apparatus (MJ-
From 930C), 15 pl was discharged while flowing N 2 gas to form a pattern.
【００６３】同様に、上記（表５）インク組成物（表
５）を、Ｎ2ガスをフローしながら１５ｐｌ吐出しパタ
ーン製膜した。次に、上記インクを Ｎ2ガスをフローし
ながら１０ｐｌ吐出し、パターン製膜した。最後に、
１，２，３．４−テトラメチルベンゼンを Ｎ2ガスをフ
ローしながら１０ｐｌ塗布して、膜厚５０ｎｍの平坦な
青色発光層を得た。Similarly, the above ink composition (Table 5) (Table 5) was ejected at a flow rate of 15 pl while flowing N 2 gas to form a pattern. Next, the above ink was ejected at a flow rate of 10 pl while flowing N 2 gas to form a pattern. Finally,
10 pl of 1,2,3.4-tetramethylbenzene was applied while flowing N 2 gas to obtain a flat blue light emitting layer having a thickness of 50 nm.
【００６４】陰極として、Ｃａを蒸着で２０ｎｍ、Ａｌ
をスパッタで２００ｎｍで形成し、最後にエポキシ樹脂
により封止を行った。As a cathode, 20 nm of Ca was deposited by evaporation, and
Was formed to a thickness of 200 nm by sputtering, and finally sealed with an epoxy resin.
【００６５】選られた素子は均一な青色発光を示した。The selected device showed uniform blue emission.
【００６６】[0066]
【発明の効果】以上述べたように本発明によれば、イン
クジェット法による有機ＥＬ素子の製造において、画素
内における膜厚を制御した、均一な有機ＥＬ薄膜からな
る有機ＥＬ素子を製造することができる。As described above, according to the present invention, in the production of an organic EL device by the ink-jet method, it is possible to produce an organic EL device comprising a uniform organic EL thin film having a controlled thickness within a pixel. it can.
【図１】本発明の実施例にかかる有機ＥＬ素子の製造工
程を示す断面図。FIG. 1 is a sectional view showing a manufacturing process of an organic EL device according to an embodiment of the present invention.
【図２】本発明の実施例にかかる有機ＥＬ素子の製造工
程を示す断面図。FIG. 2 is a sectional view showing a manufacturing process of the organic EL element according to the embodiment of the present invention.
【図３】本発明の実施例にかかる有機ＥＬ素子の製造工
程を示す断面図。FIG. 3 is a sectional view showing a manufacturing process of the organic EL element according to the embodiment of the present invention.
【図４】本発明の実施例にかかる有機ＥＬ素子の製造工
程を示す断面図。FIG. 4 is a sectional view showing a manufacturing process of the organic EL device according to the embodiment of the present invention.
【図５】本発明の実施例にかかる有機ＥＬ素子の製造工
程を示す断面図。FIG. 5 is a sectional view showing a manufacturing process of the organic EL device according to the example of the present invention.
【図６】本発明の実施例にかかる有機ＥＬ素子の製造工
程を示す断面図。FIG. 6 is a sectional view showing a manufacturing process of the organic EL element according to the example of the present invention.
【図７】インクジェット法で製膜される薄膜の構造を模
式的に示す断面図。FIG. 7 is a cross-sectional view schematically showing the structure of a thin film formed by an inkjet method.
【図８】本発明の実施例にかかるインクジェット法で製
膜される薄膜の断面図。FIG. 8 is a cross-sectional view of a thin film formed by an inkjet method according to an embodiment of the present invention.
【図９】本発明の実施例にかかるインクジェット法で製
膜される薄膜の断面図。FIG. 9 is a cross-sectional view of a thin film formed by an inkjet method according to an embodiment of the present invention.
【図１０】本発明の実施例にかかるインクジェット法に
よる有機ＥＬ素子の作製に用いた基板の断面図。FIG. 10 is a cross-sectional view of a substrate used for manufacturing an organic EL element by an inkjet method according to an example of the present invention.
１０．ガラス基板 １１．透明電極ＩＴＯ １２．ＳｉＯ2バンク １３．撥インクバンク １４．インクジェットヘッド １５．正孔注入／輸送用インク組成物 １６．正孔注入／輸送層 １７．発光層用インク組成物 １８．発光層 １９．陰極 ２０．封止層 ２１．ガラス基板 ２２．透明電極ＩＴＯ ２３．ＳｉＯ2バンク ２４．撥インクバンク ２５．インクジェット法で形成される有機ＥＬ薄膜 ２６．インクジェット法で形成される有機ＥＬ薄膜 ３０．ガラス基板 ３１．透明電極ＩＴＯ ３２．ＳｉＯ2バンク ３３．撥インクバンク ３４．インクジェットヘッド ３５．一回目に吐出されるインク組成物 ３６．一回目の吐出で形成される有機ＥＬ薄膜 ３７．二回目に吐出されるインク組成物 ３８．二回の吐出で形成される有機ＥＬ薄膜 ３９．一回目に吐出されるインク組成物 ４０．一回目の吐出で形成される有機ＥＬ薄膜 ４１．二回目に吐出されるインク組成物 ４２．二回の吐出で形成される有機ＥＬ薄膜 ５０．ガラス基板 ５１．透明電極ＩＴＯ ５２．ＳｉＯ2バンク ５３．有機物（ポリイミド）バンク10. Glass substrate 11. Transparent electrode ITO 12. SiO 2 bank 13. 13. ink repellent bank Inkjet head 15. 15. Injection / transport ink composition Hole injection / transport layer 17. 17. Ink composition for light emitting layer Light emitting layer 19. Cathode 20. Sealing layer 21. Glass substrate 22. Transparent electrode ITO 23. SiO 2 bank 24. Ink repellent bank 25. 26. Organic EL thin film formed by inkjet method 30. Organic EL thin film formed by inkjet method Glass substrate 31. Transparent electrode ITO 32. SiO 2 bank 33. Ink repellent bank 34. Inkjet head 35. 36. Ink composition discharged first time 37. Organic EL thin film formed by first ejection 38. Ink composition discharged second time 39. Organic EL thin film formed by two discharges 40. Ink composition discharged first time 41. Organic EL thin film formed by first discharge 42. Ink composition discharged second time 50. Organic EL thin film formed by two ejections Glass substrate 51. Transparent electrode ITO 52. SiO 2 bank 53. Organic (polyimide) bank
───────────────────────────────────────────────────── フロントページの続き (72)発明者 岡田 信子 長野県諏訪市大和３丁目３番５号 セイコ ーエプソン株式会社内 Ｆターム(参考） 3K007 AB04 AB17 AB18 BA06 CA01 CB01 DA01 DB03 EB00 FA01 4D075 AA04 AE15 DC24 EA07 EC11 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Nobuko Okada 3-3-5 Yamato, Suwa-shi, Nagano F-term in Seiko Epson Corporation (reference) 3K007 AB04 AB17 AB18 BA06 CA01 CB01 DA01 DB03 EB00 FA01 4D075 AA04 AE15 DC24 EA07 EC11
Claims (9)
吐出法により同一画素内に少なくとも２回以上吐出して
製膜することを特徴とする有機ＥＬ素子の製造方法。1. A method for manufacturing an organic EL device, comprising discharging an ink composition containing an organic EL material into an identical pixel at least twice by an ink discharging method to form a film.
た液滴が乾燥後に行われる事を特徴とする請求項１記載
の有機ＥＬ素子の製造方法。2. The method for manufacturing an organic EL device according to claim 1, wherein the next ejection of the ink composition is performed after drying the previously ejected droplets.
とする請求項１又は２記載の有機ＥＬ素子の製造方法。3. The method according to claim 1, wherein the organic EL material is a light emitting material.
とを特徴とする請求項１乃至３のいずれかに記載の有機
ＥＬ素子の製造方法。4. The method according to claim 1, wherein the discharge amount of the ink composition is different each time.
に吐出し、ｎ回目（ｎは吐出回数）の吐出ドット径が、
バンク径に比べて等しいかもしくは小さいことを特徴と
する請求項１乃至４記載のいずれに記載の有機ＥＬ素子
の製造方法。5. The method according to claim 1, wherein the ink composition is ejected into a region defined by a bank, and an ejection dot diameter of the n-th ejection (n is the number of ejections) is:
5. The method according to claim 1, wherein the diameter is equal to or smaller than the bank diameter.
（ｎ−1）回目の吐出インクの溶質濃度よりも等しいか
もしくは低いことを特徴とする請求項４又は５記載の有
機ＥＬ素子の製造方法。6. The n-th discharge ink composition has a solute concentration of:
6. The method according to claim 4, wherein the concentration of the solute is equal to or lower than the solute concentration of the (n-1) th discharge ink.
含まないことを特徴とする請求項６記載の有機ＥＬ素子
の製造方法。7. The method according to claim 6, wherein the n-th discharge ink composition does not contain a predetermined solute.
組成物が、（ｎ−1）回目までの吐出インクに含まれる
溶媒であることを特徴とする請求項７記載の有機ＥＬ素
子の製造方法。8. The organic EL device according to claim 7, wherein the ink composition containing no solute discharged at the n-th time is a solvent contained in the ink discharged up to the (n-1) -th time. Production method.
方法を用いて得られた有機ＥＬ素子。9. An organic EL device obtained by using the method according to claim 1. Description:
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Cited By (43)
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| JP2003022892A (en) * | 2001-07-06 | 2003-01-24 | Semiconductor Energy Lab Co Ltd | Manufacturing method of light emitting device |
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| WO2015166647A1 (en) * | 2014-04-30 | 2015-11-05 | 株式会社Ｊｏｌｅｄ | Method for forming functional layer of organic light-emitting device and method for manufacturing organic light-emitting device |
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04261503A (en) * | 1991-02-15 | 1992-09-17 | Kyodo Printing Co Ltd | Manufacture of color filter |
| JPH07318723A (en) * | 1994-03-31 | 1995-12-08 | Canon Inc | Production of color filter, producing device therefor, color filter, liquid crystal display device and device equipped with this liquid crystal display device |
| JPH08179307A (en) * | 1994-12-22 | 1996-07-12 | Sharp Corp | Production of image display panel |
| JPH08327816A (en) * | 1995-03-31 | 1996-12-13 | Canon Inc | Method and device for producing color filter, color filter, display device, device provided with the display device and method for uniformalize colored state in each region |
| WO1998012689A1 (en) * | 1996-09-19 | 1998-03-26 | Seiko Epson Corporation | Matrix type display device and method of production thereof |
| JPH10260367A (en) * | 1998-04-30 | 1998-09-29 | Olympus Optical Co Ltd | Industrial one-side open processing tool |
| JPH11153709A (en) * | 1995-09-05 | 1999-06-08 | Toray Ind Inc | Production of color filter |
| WO1999048339A1 (en) * | 1998-03-17 | 1999-09-23 | Seiko Epson Corporation | Substrate for patterning thin film and surface treatment thereof |
| JP2001085161A (en) * | 1999-09-10 | 2001-03-30 | Sharp Corp | Method of manufacturing organic led display |
| JP2001167878A (en) * | 1999-12-09 | 2001-06-22 | Sharp Corp | Coating for forming organic led layer and method of manufacturing the same |
| JP2001237067A (en) * | 2000-02-22 | 2001-08-31 | Sharp Corp | Manufacturing method of organic luminous element |
-
2000
- 2000-04-07 JP JP2000105997A patent/JP4048687B2/en not_active Expired - Fee Related
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04261503A (en) * | 1991-02-15 | 1992-09-17 | Kyodo Printing Co Ltd | Manufacture of color filter |
| JPH07318723A (en) * | 1994-03-31 | 1995-12-08 | Canon Inc | Production of color filter, producing device therefor, color filter, liquid crystal display device and device equipped with this liquid crystal display device |
| JPH08179307A (en) * | 1994-12-22 | 1996-07-12 | Sharp Corp | Production of image display panel |
| JPH08327816A (en) * | 1995-03-31 | 1996-12-13 | Canon Inc | Method and device for producing color filter, color filter, display device, device provided with the display device and method for uniformalize colored state in each region |
| JPH11153709A (en) * | 1995-09-05 | 1999-06-08 | Toray Ind Inc | Production of color filter |
| WO1998012689A1 (en) * | 1996-09-19 | 1998-03-26 | Seiko Epson Corporation | Matrix type display device and method of production thereof |
| WO1999048339A1 (en) * | 1998-03-17 | 1999-09-23 | Seiko Epson Corporation | Substrate for patterning thin film and surface treatment thereof |
| JPH10260367A (en) * | 1998-04-30 | 1998-09-29 | Olympus Optical Co Ltd | Industrial one-side open processing tool |
| JP2001085161A (en) * | 1999-09-10 | 2001-03-30 | Sharp Corp | Method of manufacturing organic led display |
| JP2001167878A (en) * | 1999-12-09 | 2001-06-22 | Sharp Corp | Coating for forming organic led layer and method of manufacturing the same |
| JP2001237067A (en) * | 2000-02-22 | 2001-08-31 | Sharp Corp | Manufacturing method of organic luminous element |
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