JP2001291583A - Organic el element and manufacturing method of organic el element - Google Patents

Organic el element and manufacturing method of organic el element

Info

Publication number
JP2001291583A
JP2001291583A JP2000105997A JP2000105997A JP2001291583A JP 2001291583 A JP2001291583 A JP 2001291583A JP 2000105997 A JP2000105997 A JP 2000105997A JP 2000105997 A JP2000105997 A JP 2000105997A JP 2001291583 A JP2001291583 A JP 2001291583A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
organic el
method
ink composition
manufacturing
ink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000105997A
Other languages
Japanese (ja)
Other versions
JP4048687B2 (en )
Inventor
Katsuyuki Morii
Nobuko Okada
Shunichi Seki
信子 岡田
克行 森井
関  俊一
Original Assignee
Seiko Epson Corp
セイコーエプソン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/28Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
    • H01L27/32Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
    • H01L27/3241Matrix-type displays
    • H01L27/3295Matrix-type displays including banks or shadow masks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0002Deposition of organic semiconductor materials on a substrate
    • H01L51/0003Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating
    • H01L51/0004Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing, screen printing
    • H01L51/0005Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing, screen printing ink-jet printing

Abstract

PROBLEM TO BE SOLVED: To form a uniform organic EL thin film by controlling the organic EL film thickness in a picture element in a manufacturing of organic EL element by an ink-jet method. SOLUTION: In a fixed area surrounded by banks 32, 33, an ink composition 35 is ejected from an ink jet head 34 and a film is formed. Next, an ink composition 37 having a solid content concentration not more than that of the ink composition 35 that have been ejected in the last time, to form an organic EL thin film of uniform and desired thickness in the pixel.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】ディスプレイ、表示光源などに用いられる電気的発光素子である有機EL素子およびその製造方法に関する。 BACKGROUND OF THE INVENTION display, relates to an organic EL device and a manufacturing method thereof is electrically emitting element used like a display light source.

【0002】 [0002]

【従来の技術】近年液晶ディスプレイに替わる自発発光型ディスプレイとして有機物を用いた発光素子の開発が加速している。 Development of a light emitting element using an organic material is accelerating as Recently self emissive display alternative to liquid crystal displays. 有機物を用いた有機EL(エレクトロルミネッセンス)素子としては、Appl. The organic EL (electroluminescence) element using an organic material, Appl. Phys. Phys. L
ett. ett. 51(12)、21September 19 51 (12), 21September 19
87の913ページから示されているように低分子を蒸着法で成膜する方法と、Appl. A method of forming a film by vapor deposition of low molecular as shown from 913 to 87, Appl. Phys. Phys. Let Let
t. t. 71(1)、7 July 1997の34ページから示されているように高分子を塗布する方法が主に報告されている。 71 (1), 7 July method of applying a polymer as 34 shown from the page 1997 is mainly reported.

【0003】有機EL素子において、カラー化の手段としては低分子系材料の場合、マスク越しに異なる発光材料を所望の画素上に蒸着し形成する方法が行われている。 [0003] In the organic EL element, as means colorization case of low molecular weight material, a method for forming and depositing a different luminescent material through the mask onto a desired pixel is performed. 一方、高分子系材料については、微細かつ容易にパターニングができることからインクジェット法を用いたカラー化が注目されている。 On the other hand, the high molecular material, colorization using an ink jet method has been noted because it can finely and easily patterned. インクジェット法による有機EL素子の形成としては方法は、例えば、特開平7− Method for forming an organic EL device by the inkjet method, for example, JP-A-7-
235378、特開平10−12377、特開平10− 235378, JP-A-10-12377, JP-A-10-
153967、特開平11−40358、特開平11− 153967, JP-A-11-40358, JP-A-11-
54270、特開平11−339957に開示されている。 54270, is disclosed in JP-A-11-339957.

【0004】また、素子構造という観点からは、発光効率、耐久性を向上させるために、正孔注入/輸送層を陽極と発光層の間に形成することが多い(Appl.Ph [0004] Further, from the viewpoint of device structure, the luminous efficiency, in order to improve the durability, the hole injection / transporting layer is often formed between the anode and the light-emitting layer (Appl.Ph
ys. ys. Lett. Lett. 51、21 September 1 51,21 September 1
987の913ページ)。 987 of 913 page). 従来、バッファ層や正孔注入/輸送層としては導電性高分子、例えばポリチオフェン誘導体やポリアニリン誘導体(Nature,357, Conventionally, as a buffer layer or the hole injection / transport layer a conductive polymer, for example, polythiophene derivatives, polyaniline derivatives (Nature, 357,
477、1992)を用い、スピンコート等の塗布法により膜を形成する。 Using 477,1992), to form a film by a coating method such as spin coating. 低分子系材料においては正孔注入/ In the low-molecular material hole injection /
輸送層として、フェニルアミン誘導体を蒸着で形成することが報告されている。 As transport layer, it has been reported to form a phenyl derivative by vapor deposition.

【0005】 [0005]

【発明が解決しようとする課題】有機薄膜材料を無駄にせず、簡便にかつ微細パターニング製膜する手段としてインクジェット方式は大変有効である。 Without wasting an organic thin film material [0005], an ink jet method as easily and finely patterned casting to means it is very effective.

【0006】しかしながら、インクジェット法による薄膜製膜においては、十分に膜厚を制御し、均一な薄膜を形成することが困難であった。 However, in the thin film formation by the inkjet method, sufficiently control the film thickness, to form a uniform thin film was difficult.

【0007】例えば、バンクで仕切られた領域に液滴を塗布して膜を形成する場合、バンクが撥インク性を有していても、乾燥過程で膜が凹に(中央が薄く、周囲が厚く)なることや、時に未塗布領域などの膜厚ムラを生じることがあった。 [0007] For example, if by applying the droplets in a region partitioned by the bank to form a film, even if the bank has an ink-repellent, film drying process the concave (thin central, ambient thick) made it and had to result the film thickness unevenness such as at uncoated regions.

【0008】本発明は、上記問題点に鑑みてなされたもので、その課題とするところは、画素内で膜厚が制御された、均一な有機EL薄膜を得るための、インクジェット法による有機EL素子の製造方法ならびに有機EL素子を提供することにある。 [0008] The present invention has been made in view of the above problems, and has as its object, the thickness in the pixel is controlled, in order to obtain a uniform organic EL thin film, organic EL by the inkjet method It is to provide a manufacturing method and an organic EL element of the device.

【0009】 [0009]

【課題を解決するための手段】これらの課題は下記(1)〜(9)の本発明によって達成される。 SUMMARY OF THE INVENTION These problems are achieved by the present invention described below (1) to (9).

【0010】(1)有機EL材料を含むインク組成物をインク吐出法により同一画素内に少なくとも2回以上吐出して製膜することを特徴とする有機EL素子の製造方法。 [0010] (1) The method for manufacturing an organic EL device, which comprises a film by discharging at least twice an ink composition containing an organic EL material in the same pixel by the ink discharge method.

【0011】(2)次のインク組成物の吐出が、前回の吐出した液滴が乾燥後に行われる事を特徴とする上記(1)の有機EL素子の製造方法。 [0011] (2) discharge of the next ink composition, a method of manufacturing the organic EL device of (1), characterized in that the discharged droplets of the last is performed after drying.

【0012】(3)有機EL材料が発光材料であることを特徴とする上記(1)又は(2)の有機EL素子の製造方法。 [0012] (3) A method of manufacturing an organic EL element of the organic EL material is characterized in that it is a light-emitting material (1) or (2).

【0013】(4)各回のインク組成物の吐出量が、異なることを特徴とする上記(1)乃至(3)のいずれかの有機EL素子の製造方法。 [0013] (4) discharge amount each time of the ink composition, method of any of the organic EL device of (1) to (3), wherein different.

【0014】(5)インク組成物をバンクで区画された領域内に吐出し、n回目(nは吐出回数)の吐出ドット径が、バンク径に比べて等しいかもしくは小さいことを特徴とする上記(1)乃至(4)のいずれの有機EL素子の製造方法。 [0014] (5) The ink composition discharged into compartmentalized areas in the bank, the n-th (n is the discharge count) ejection dot diameter, characterized in that equal to or smaller than the bank size (1) to (4) any of the method of manufacturing the organic EL device.

【0015】(6)n回目の吐出インク組成物の溶質濃度が、(n−1)回目の吐出インクの溶質濃度よりも等しいかもしくは低いことを特徴とする上記(4)又は(5)の有機EL素子の製造方法。 [0015] (6) solute concentration of the n-th ejection ink composition, the (n-1) th equal than the solute concentration of the ejected ink to or lower that the above characterized by (4) or (5) the method for manufacturing an organic EL device.

【0016】(7)n回目の吐出インク組成物が所定の溶質を含まないことを特徴とする上記(6)の有機EL [0016] (7) Organic EL of (6) to the n-th ejection ink composition is characterized in that it is free of certain solute
素子の製造方法。 Manufacturing method for the device.

【0017】(8)n回目に吐出される溶質を含まないインク組成物が、(n−1)回目までの吐出インクに含まれる溶媒であることを特徴とする上記(7)の有機E [0017] (8) The ink composition containing no solute ejected n-th time, organic E above (7), which is a solvent contained in the discharged ink to the (n-1) th
L素子の製造方法。 The production method of L element.

【0018】(9)上記(1)乃至(8)のいずれかの方法を用いて得られた有機EL素子。 [0018] (9) above (1) to the organic EL element obtained using the method of any of (8).

【0019】 [0019]

【発明の実施の形態】以下、本発明の実施形態について詳細に説明する。 DETAILED DESCRIPTION OF THE INVENTION Hereinafter, embodiments of the present invention will be described in detail.

【0020】インクジェット方式による有機EL素子の製造方法とは、素子を構成する正孔注入/輸送材料ならびに発光材料を溶媒に溶解または分散させたインク組成物を、インクジェットヘッドから吐出させて透明電極基板上にパターニング塗布し、正孔注入/輸送層ならびに発光材層をパターン形成する方法である。 [0020] The method of manufacturing an organic EL device using the inkjet method, the hole injection / transport material and the ink composition of the luminescent material is dissolved or dispersed in a solvent constituting the device, the transparent electrode substrate is discharged from the ink jet head patterned coating on a method of patterning a hole injection / transport layer and the light emitting material layer.

【0021】図1はインクジェット方式による有機EL [0021] Figure 1 is an organic EL by an inkjet method
素子の製造に用いられる基板の断面図を示したものである。 It shows a cross-sectional view of a substrate used for manufacturing a device. ガラス基板10あるいはTFT付きの基板上にIT IT on a glass substrate 10 or the TFT with on the board
O11が透明画素電極としてパターンニングされ、画素を隔てる領域にSiO 2 12と撥インク性あるいは撥インク化された有機物からなる隔壁(以下バンクと称する)13を設けた構造である。 O11 is patterned as a transparent pixel electrode, a structure in which a SiO 2 12 and (hereinafter referred to as bank) ink-repellent or consisting ink repellent of organics partition wall 13 in the area that separates the pixels. バンクの形状つまり画素の開口形は、円形、楕円、四角、ストライプいづれの形状でも構わないが、インク組成物には表面張力があるため、四角形の角部は丸みを帯びているほうが好ましい。 Opening shape clogging pixel banks, circular, oval, square, but may be in the form of Izure stripes, because of the surface tension in the ink composition, the corners of the rectangle is preferably more rounded.

【0022】図2〜6において、インクジェット方式による正孔注入/輸送層+発光層の積層構造を有する素子の製造工程を示す。 [0022] In Figures 2-6, showing the manufacturing process of the device having a stacked structure of the hole injecting / transporting layer + light emitting layer by ink jet method.

【0023】正孔注入/輸送材料を含むインク組成物1 The ink composition 1 containing a hole injecting / transporting material
5をインクジェットヘッド14から吐出し、パターン塗布する(図2)。 5 ejected from the inkjet head 14, a pattern applied (Figure 2). 塗布後、溶媒除去および/または熱処理、あるいは窒素ガスなどのフローにより正孔注入/輸送層16を形成する(図3)。 After coating, the solvent is removed and / or heat treatment, or by a flow of nitrogen gas to form the hole injection / transport layer 16 (FIG. 3).

【0024】続いて発光材料を含むインク組成物17を正孔注入/輸送層上に塗布し(図4)、溶媒除去および/または熱処理あるいは窒素ガスなどのフローにより発光層18を形成する(図5)。 [0024] followed by applying the ink composition 17 including a luminescent material in the hole injection / transport layer (4), forming a light-emitting layer 18 by flow such as solvent removal and / or heat treatment or nitrogen gas (FIG. 5).

【0025】Ca、Mg、Ag、Al、Li等の金属を用い、蒸着法およびスパッタ法等により陰極19を形成する。 [0025] Ca, using Mg, Ag, Al, a metal such as Li, to form a cathode 19 by vapor deposition and sputtering. さらに素子の保護を考え、エポキシ樹脂、アクリル樹脂、液状ガラス等により封止層20を形成し、素子が出来上がる(図6)。 Further consider the protection of the element, an epoxy resin, to form an acrylic resin, the sealing layer 20 by liquid glass or the like, element is completed (FIG. 6).

【0026】しかし、インクジェット法による膜形成においては、図7に示したように、(A)画素内中央部で膜が薄く、バンク裾で厚くなる、(B)未塗布領域ができる、ことがある。 [0026] However, in the film formation by the ink jet method, as shown in FIG. 7, (A) film is thin in the pixel central portion is thicker in the bank hem can uncoated region (B), it is is there.

【0027】そこで、膜厚が所望の厚さに最適化し、均一な薄膜を得るためには、図8、9に示すように、同一画素に少なくとも2回以上のインク組成物を画素内に塗布し製膜することが好ましい。 [0027] Therefore, the film thickness is optimized to the desired thickness, in order to obtain a uniform thin film, as shown in FIGS. 8 and 9, applying at least two or more of the ink composition in the pixel in the same pixel it is preferable that the film formation. さらに好ましくは、最後に吐出する液滴のドット径が、バンクのドット径以下であること、および/または最後に吐出するインク組成物の有機EL材料濃度が、その前に吐出したインク組成物の有機EL材料濃度以下であることがよい。 More preferably, the dot diameter of the droplets finally ejection, it is under the dot diameter or less of the banks, and the organic EL material concentration / or finally discharging the ink composition, the ink composition ejected on the previous it is not more than the organic EL material concentration. さらに好ましくは、最後に吐出するインクが有機EL材料を含まない溶媒である事が望ましい。 More preferably, it is desirable ink finally discharged is solvent free from organic EL material. 特に、画素内に存在する材料量を変えずに、未塗布領域を塗膜し、膜厚を整えるのに有効である。 In particular, without changing the amount of material present in the pixel, the uncoated region coating is effective to adjust the film thickness.

【0028】実際の液滴量は、画素の大きさ、目的とする膜厚およびインク組成物の材料濃度にあわせて適宜調製すればよい。 The actual drop volume, the size of the pixel, may be appropriately prepared in accordance with the material density of the film thickness and ink composition of interest.

【0029】以下、実施例を参照して本発明を更に、具体的に説明するが、本発明はこれらに制限されるものではない。 [0029] Hereinafter, the present invention further with reference to examples, although specifically described, the present invention is not limited thereto.

【0030】(実施例1)図10に本実施例に用いた基板を示す。 [0030] A substrate used in the present example (Example 1) FIG.

【0031】ITO51がパターニングされたガラス基板50上にバンクをフォトリソグラフィーにより、ポリイミド53およびSiO 2 52の積層で形成したものである。 [0031] ITO51 by photolithography bank on the glass substrate 50 which is patterned, and forming a laminated polyimide 53 and SiO 2 52. バンク径( SiO 2の開口径)は28μm、高さが2μmである。 Bank diameter (an opening diameter of SiO 2) is 28 .mu.m, is 2μm height. ポリイミドバンクの開口は44μmである。 The opening of the polyimide bank is 44μm. これらの画素が70.5μmピッチで配置されている基板である。 These pixels are substrates disposed in 70.5μm pitch.

【0032】正孔注入/輸送材料インク組成物を塗布する前に、大気圧プラズマ処理によりポリイミドバンク5 [0032] Before applying the hole injection / transport material ink composition, a polyimide banks by atmospheric pressure plasma treatment 5
3を撥インク処理した。 3 was the ink-repellent treatment. 大気圧プラズマ処理の条件は、 Conditions of atmospheric pressure plasma treatment,
大気圧下で、パワー300W、電極−基板間距離1m Under atmospheric pressure, power 300 W, electrode - substrate distance 1m
m、酸素プラズマ処理では、酸素ガス流量80ccm、 m, an oxygen plasma treatment, the oxygen gas flow rate 80Ccm,
ヘリウムガス流量10SLM、テーブル搬送速度10m Helium gas flow 10 SLM, table transport speed 10m
m/sで行い、続けてCF 4プラズマ処理では、 CF 4ガス流量100ccm、ヘリウムガス流量10SLM、テーブル搬送速度5mm/sで行った。 carried out at m / s, in CF 4 plasma treatment continuously, it was performed in a CF 4 gas flow rate 100 ccm, helium gas flow 10 SLM, table transport speed 5 mm / s.

【0033】正孔注入/輸送層用インク組成物として表1に示した処方のものを調製した。 [0033] was prepared as the recipe shown in Table 1 as the hole injection / transport layer for the ink composition.

【0034】 [0034]

【表1】 [Table 1]

【0035】基板の表面処理後、表1に示した正孔注入/輸送層用インク組成物をインクジェットプリント装置のヘッド(エプソン社製MJ−930C)から15pl [0035] After the surface treatment of the substrate, 15 pl hole injection / transport layer ink composition shown in Table 1 from the head of an ink jet printing apparatus (Epson MJ-930C)
吐出しパターン塗布。 Discharge pattern application. 真空中(1torr)、室温、2 In vacuum (1 torr), at room temperature, 2
0分という条件で溶媒を除去した。 The solvent was removed under the conditions of 0 minutes. 続けて、同じ正孔注入/輸送層用インク組成物を15pl吐出しパターン塗布した。 Subsequently, the same hole injection / transport layer ink composition was 15pl discharge pattern coating. 真空中(1torr)、室温、20分という条件で溶媒を除去し、大気中、200℃(ホットプレート上)、10分の熱処理により正孔注入/輸送を形成した。 In vacuum (1 torr), at room temperature, the solvent was removed under the conditions of 20 minutes, in the atmosphere, 200 ° C. (hot plate) to form a hole injecting / transporting by heat treatment for 10 minutes. これにより、膜厚50nmの平坦な正孔注入/輸送層を得た。 This gave flat hole injection / transporting layer having a thickness of 50nm.

【0036】発光層用インク組成物として、表2に示した処方のものを調製した。 [0036] As the light emitting layer ink composition was prepared as a recipe shown in Table 2.

【0037】 [0037]

【表2】 [Table 2]

【0038】表2に示した化合物1〜3を下記に示す。 [0038] to a compound 1-3 as shown in Table 2 below.

【0039】 [0039]

【化1】 [Formula 1] 表2に示した1%(wt/vol)濃度の発光層用インク組成物をインクジェットプリント装置のヘッド(エプソン社製MJ−930C)から、N 2ガスをフローしながら20pl吐出しパターン製膜した。 1% are shown in Table 2 from the head of (wt / vol) concentration ink jet printing apparatus a light emitting layer ink composition (Epson MJ-930C), and 20pl ejected pattern casting while flowing the N 2 gas .

【0040】次に、表2のインク組成物に用いた溶媒である1,2,3,4−テトラメチルベンゼンだけを、 Next, only the 1,2,3,4-tetramethyl benzene, which is a solvent used in the ink compositions of Table 2,
2ガスをフローしながら15plパターン塗布した。 And 15pl pattern applied while flowing the N 2 gas.
これにより、膜厚70nmの平坦な緑色発光層を得た。 This gave flat green light-emitting layer having a thickness of 70 nm.

【0041】陰極として、Caを蒸着で20nm、Al [0041] As the cathode, 20 nm at the deposition of the Ca, Al
をスパッタで200nmで形成し、最後にエポキシ樹脂により封止を行った。 Was formed in 200nm by sputtering, it was sealed with end epoxy resin.

【0042】選られた素子は均一な緑色発光を示した。 [0042] independently an element showed uniform green emission.

【0043】(実施例2)正孔注入/輸送層までは、実施例1と同様に形成した。 [0043] Until (Example 2) the hole injection / transport layer was formed in the same manner as in Example 1.

【0044】発光層用インク組成物として、表3に示した処方のものを調製した。 [0044] As the light emitting layer ink composition was prepared as a recipe shown in Table 3.

【0045】 [0045]

【表3】 [Table 3]

【0046】表3に示した化合物1及び2は、実施例1 [0046] Compounds 1 and 2 shown in Table 3, Example 1
で用いたものと同様である。 Similar to that one used in. 化合物4は下記構造を有する化合物である。 Compound 4 is a compound having the following structure.

【0047】 [0047]

【化2】 ## STR2 ## 表3に示した1%(wt/vol)濃度の発光層用インク組成物をインクジェットプリント装置のヘッド(エプソン社製MJ−930C)から、N 2ガスをフローしながら15pl吐出しパターン製膜した。 1% are shown in Table 3 from the head of (wt / vol) concentration ink jet printing apparatus a light emitting layer ink composition (Epson MJ-930C), and 15pl ejected pattern casting while flowing the N 2 gas .

【0048】次に、表3のインク組成物において、濃度が0.25%のインク組成物を調製し、 N 2ガスをフローしながら15plパターン塗布した。 Next, the ink compositions of Table 3, the concentration was prepared 0.25% of the ink composition, and 15pl pattern applied while flowing the N 2 gas. これにより、膜厚50nmの平坦な青色発光層を得た。 This gave flat blue light-emitting layer having a thickness of 50nm.

【0049】陰極として、Caを蒸着で20nm、Al [0049] As the cathode, 20 nm at the deposition of the Ca, Al
をスパッタで200nmで形成し、最後にエポキシ樹脂により封止を行った。 Was formed in 200nm by sputtering, it was sealed with end epoxy resin.

【0050】選られた素子は均一な青色発光を示した。 The independent an element showed uniform blue emission.

【0051】(実施例3)正孔注入/輸送層までは、実施例1と同様に形成した。 [0051] Until (Example 3) hole injection / transport layer was formed in the same manner as in Example 1.

【0052】発光層用インク組成物として、表4に示した処方のものを調製した。 [0052] As the light emitting layer ink composition was prepared as a recipe shown in Table 4.

【0053】 [0053]

【表4】 [Table 4]

【0054】表4に示した化合物1、2は、実施例1で用いたものと同様である。 [0054] Table 4 Compound 1, 2 shown in is the same as that used in Example 1. 化合物5は下記構造を有する化合物である。 Compound 5 is a compound having the following structure.

【0055】 [0055]

【化3】 [Formula 3] 表4に示した1%(wt/vol)濃度の発光層用インク組成物をインクジェットプリント装置のヘッド(エプソン社製MJ−930C)から、N 2ガスをフローしながら15pl吐出しパターン製膜した。 1% are shown in Table 4 from the head of (wt / vol) concentration ink jet printing apparatus a light emitting layer ink composition (Epson MJ-930C), and 15pl ejected pattern casting while flowing the N 2 gas .

【0056】次に、表4のインク組成物において、濃度が0.5%のインク組成物を調製し、 N 2ガスをフローしながら10plパターン塗布した。 Next, the ink compositions of Table 4, the concentration was prepared with 0.5% of the ink composition, and 10pl pattern applied while flowing the N 2 gas. これにより、膜厚70nmの平坦な赤色発光層を得た。 This gave flat red light-emitting layer having a thickness of 70 nm.

【0057】陰極として、Caを蒸着で20nm、Al [0057] As the cathode, 20 nm at the deposition of the Ca, Al
をスパッタで200nmで形成し、最後にエポキシ樹脂により封止を行った。 Was formed in 200nm by sputtering, it was sealed with end epoxy resin.

【0058】選られた素子は均一な赤色発光を示した。 [0058] independently an element showed uniform red emission.

【0059】(実施例5)正孔注入/輸送層までは、実施例1と同様に形成した。 [0059] Until (Example 5) Hole injecting / transporting layer was formed in the same manner as in Example 1.

【0060】発光層用インク組成物として、表5に示した処方のものを調製した。 [0060] As the light emitting layer ink composition was prepared as a recipe shown in Table 5.

【0061】 [0061]

【表5】 [Table 5]

【0062】表5に示した化合物1、2、4は、実施例1、2で用いたものと同様である。 The compounds shown in Table 5 1,2,4 is the same as that used in Examples 1 and 2. 表5に示した0.5 Table 5 0.5 shown in
%(wt/vol)濃度の発光層用インク組成物をインクジェットプリント装置のヘッド(エプソン社製MJ− % (Wt / vol) head of the light-emitting layer ink composition of concentration ink jet printing apparatus (Epson MJ-
930C)から、N 2ガスをフローしながら15pl吐出しパターン製膜した。 From 930C), and 15pl ejected pattern casting while flowing the N 2 gas.

【0063】同様に、上記(表5)インク組成物(表5)を、N 2ガスをフローしながら15pl吐出しパターン製膜した。 [0063] Similarly, the (Table 5) Ink composition (Table 5), was 15pl ejected pattern casting while flowing the N 2 gas. 次に、上記インクを N 2ガスをフローしながら10pl吐出し、パターン製膜した。 Next, the ink ejecting 10pl while flowing the N 2 gas was patterned casting. 最後に、 Finally,
1,2,3.4−テトラメチルベンゼンを N 2ガスをフローしながら10pl塗布して、膜厚50nmの平坦な青色発光層を得た。 The 1,2,3.4- tetramethyl benzene with 10pl applied while flowing the N 2 gas, to obtain a flat blue light-emitting layer having a thickness of 50nm.

【0064】陰極として、Caを蒸着で20nm、Al [0064] As the cathode, 20 nm at the deposition of the Ca, Al
をスパッタで200nmで形成し、最後にエポキシ樹脂により封止を行った。 Was formed in 200nm by sputtering, it was sealed with end epoxy resin.

【0065】選られた素子は均一な青色発光を示した。 [0065] independently an element showed uniform blue emission.

【0066】 [0066]

【発明の効果】以上述べたように本発明によれば、インクジェット法による有機EL素子の製造において、画素内における膜厚を制御した、均一な有機EL薄膜からなる有機EL素子を製造することができる。 According to the present invention as described above, according to the present invention, in the production of the organic EL device by the inkjet method, and controlling the thickness of the pixel, it is possible to manufacture an organic EL element consisting of uniform organic EL thin film it can.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の実施例にかかる有機EL素子の製造工程を示す断面図。 Cross-sectional view showing the manufacturing process of the organic EL element to an embodiment of the present invention; FIG.

【図2】本発明の実施例にかかる有機EL素子の製造工程を示す断面図。 Cross-sectional view showing the manufacturing process of the organic EL element to an embodiment of the present invention; FIG.

【図3】本発明の実施例にかかる有機EL素子の製造工程を示す断面図。 Cross-sectional view showing the manufacturing process of the organic EL element to an embodiment of the present invention; FIG.

【図4】本発明の実施例にかかる有機EL素子の製造工程を示す断面図。 Cross-sectional view showing the manufacturing process of the organic EL element to an embodiment of the present invention; FIG.

【図5】本発明の実施例にかかる有機EL素子の製造工程を示す断面図。 Cross-sectional view showing the manufacturing process of the organic EL element to an embodiment of the present invention; FIG.

【図6】本発明の実施例にかかる有機EL素子の製造工程を示す断面図。 Cross-sectional view showing the manufacturing process of the organic EL element to an embodiment of the present invention; FIG.

【図7】インクジェット法で製膜される薄膜の構造を模式的に示す断面図。 7 is a cross-sectional view of the structure of the thin film shown schematically to be a film by an ink jet method.

【図8】本発明の実施例にかかるインクジェット法で製膜される薄膜の断面図。 Figure 8 is a cross-sectional view of a thin film to be a film by an ink jet method according to an embodiment of the present invention.

【図9】本発明の実施例にかかるインクジェット法で製膜される薄膜の断面図。 Figure 9 is a cross-sectional view of a thin film to be a film by an ink jet method according to an embodiment of the present invention.

【図10】本発明の実施例にかかるインクジェット法による有機EL素子の作製に用いた基板の断面図。 Sectional view of a substrate used in manufacturing the organic EL element by such an ink-jet method in the embodiment of the invention; FIG.

【符号の説明】 DESCRIPTION OF SYMBOLS

10. 10. ガラス基板 11. Glass substrate 11. 透明電極ITO 12. A transparent electrode ITO 12. SiO 2バンク 13. SiO 2 bank 13. 撥インクバンク 14. Ink repellent bank 14. インクジェットヘッド 15. The ink jet head 15. 正孔注入/輸送用インク組成物 16. Hole injection / transport ink composition 16. 正孔注入/輸送層 17. The hole injection / transport layer 17. 発光層用インク組成物 18. Emitting layer ink composition 18. 発光層 19. The light-emitting layer 19. 陰極 20. Cathode 20. 封止層 21. Sealing layer 21. ガラス基板 22. Glass substrate 22. 透明電極ITO 23. A transparent electrode ITO 23. SiO 2バンク 24. SiO 2 bank 24. 撥インクバンク 25. The ink-repellent bank 25. インクジェット法で形成される有機EL薄膜 26. The organic EL thin film 26 formed by an inkjet method. インクジェット法で形成される有機EL薄膜 30. The organic EL thin film 30 formed by an inkjet method. ガラス基板 31. Glass substrate 31. 透明電極ITO 32. A transparent electrode ITO 32. SiO 2バンク 33. SiO 2 bank 33. 撥インクバンク 34. The ink-repellent bank 34. インクジェットヘッド 35. The ink-jet head 35. 一回目に吐出されるインク組成物 36. The ink composition 36 to be discharged at a time. 一回目の吐出で形成される有機EL薄膜 37. The organic EL thin film 37 formed by the discharge of the first time. 二回目に吐出されるインク組成物 38. The ink composition 38 to be discharged to the second time. 二回の吐出で形成される有機EL薄膜 39. The organic EL thin film 39 formed by twice the discharge. 一回目に吐出されるインク組成物 40. The ink composition 40 to be discharged at a time. 一回目の吐出で形成される有機EL薄膜 41. The organic EL thin film 41 formed by the discharge of the first time. 二回目に吐出されるインク組成物 42. The ink composition 42 to be discharged to the second time. 二回の吐出で形成される有機EL薄膜 50. The organic EL thin film 50 formed by twice the discharge. ガラス基板 51. Glass substrate 51. 透明電極ITO 52. A transparent electrode ITO 52. SiO 2バンク 53. SiO 2 bank 53. 有機物(ポリイミド)バンク Organic material (polyimide) bank

───────────────────────────────────────────────────── フロントページの続き (72)発明者 岡田 信子 長野県諏訪市大和3丁目3番5号 セイコ ーエプソン株式会社内 Fターム(参考) 3K007 AB04 AB17 AB18 BA06 CA01 CB01 DA01 DB03 EB00 FA01 4D075 AA04 AE15 DC24 EA07 EC11 ────────────────────────────────────────────────── ─── front page of the continuation (72) inventor Nobuko Okada Suwa City, Nagano Prefecture Yamato 3-chome No. 3 No. 5 Seiko Epson Corporation over the F-term (reference) 3K007 AB04 AB17 AB18 BA06 CA01 CB01 DA01 DB03 EB00 FA01 4D075 AA04 AE15 DC24 EA07 EC11

Claims (9)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】有機EL材料を含むインク組成物をインク吐出法により同一画素内に少なくとも2回以上吐出して製膜することを特徴とする有機EL素子の製造方法。 1. A method of manufacturing an organic EL device, which comprises a film by discharging at least twice an ink composition containing an organic EL material in the same pixel by the ink discharge method.
  2. 【請求項2】次のインク組成物の吐出が、前回の吐出した液滴が乾燥後に行われる事を特徴とする請求項1記載の有機EL素子の製造方法。 2. A discharge of the following ink composition, method of manufacturing an organic EL element according to claim 1, wherein the ejected droplets and the previous characterized in that takes place after drying.
  3. 【請求項3】有機EL材料が発光材料であることを特徴とする請求項1又は2記載の有機EL素子の製造方法。 3. A method of manufacturing an organic EL element according to claim 1 or 2, wherein the organic EL material is characterized in that it is a light-emitting material.
  4. 【請求項4】各回のインク組成物の吐出量が、異なることを特徴とする請求項1乃至3のいずれかに記載の有機EL素子の製造方法。 4. A discharge amount of each round of the ink composition, a method of manufacturing an organic EL device according to any one of claims 1 to 3, wherein different.
  5. 【請求項5】インク組成物をバンクで区画された領域内に吐出し、n回目(nは吐出回数)の吐出ドット径が、 5. ejecting an ink composition in the region defined by the bank, n-th (n is number of ejections) ejection dot diameter of,
    バンク径に比べて等しいかもしくは小さいことを特徴とする請求項1乃至4記載のいずれに記載の有機EL素子の製造方法。 The method for manufacturing an organic EL device according to any of claims 1 to 4, wherein the equal to or smaller than the bank size.
  6. 【請求項6】n回目の吐出インク組成物の溶質濃度が、 Solute concentration of 6. n-th ejection ink composition,
    (n−1)回目の吐出インクの溶質濃度よりも等しいかもしくは低いことを特徴とする請求項4又は5記載の有機EL素子の製造方法。 (N-1) th method of manufacturing an organic EL element according to claim 4 or 5, wherein the equal to or lower than the solute concentration of the ink ejected.
  7. 【請求項7】n回目の吐出インク組成物が所定の溶質を含まないことを特徴とする請求項6記載の有機EL素子の製造方法。 7. A method of manufacturing an organic EL element according to claim 6, wherein the n-th ejection ink composition is characterized in that it is free of certain solute.
  8. 【請求項8】n回目に吐出される溶質を含まないインク組成物が、(n−1)回目までの吐出インクに含まれる溶媒であることを特徴とする請求項7記載の有機EL素子の製造方法。 8. The ink composition free of solutes ejected n-th time, the organic EL device according to claim 7, characterized in that the solvent contained in the discharged ink to the (n-1) th Production method.
  9. 【請求項9】請求項1乃至8記載のいずれか1項記載の方法を用いて得られた有機EL素子。 9. The organic EL element obtained using the method according to any one of claims 1 to 8, wherein.
JP2000105997A 2000-04-07 2000-04-07 Method of manufacturing an organic el element and organic el element Expired - Fee Related JP4048687B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000105997A JP4048687B2 (en) 2000-04-07 2000-04-07 Method of manufacturing an organic el element and organic el element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000105997A JP4048687B2 (en) 2000-04-07 2000-04-07 Method of manufacturing an organic el element and organic el element

Publications (2)

Publication Number Publication Date
JP2001291583A true true JP2001291583A (en) 2001-10-19
JP4048687B2 JP4048687B2 (en) 2008-02-20

Family

ID=18619241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000105997A Expired - Fee Related JP4048687B2 (en) 2000-04-07 2000-04-07 Method of manufacturing an organic el element and organic el element

Country Status (1)

Country Link
JP (1) JP4048687B2 (en)

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003022892A (en) * 2001-07-06 2003-01-24 Semiconductor Energy Lab Co Ltd Manufacturing method of light emitting device
WO2004019659A1 (en) * 2002-08-21 2004-03-04 Fujitsu Limited Organic el device and production method therefor
WO2004026003A1 (en) * 2002-09-12 2004-03-25 Toshiba Matsushita Display Technology Co., Ltd. Organic el display
WO2004030417A1 (en) * 2002-09-24 2004-04-08 Sharp Kabushiki Kaisha Method and apparatus for manufacturing active-matrix organic el display, active-matrix organic el display, method for manufacturing liquid crystal array, liquid crystal array, method and apparatus for manufacturing color filter substrate, and color filter substrate
US6911773B2 (en) 2001-12-18 2005-06-28 Seiko Epson Corporation Display apparatus, electric device, and manufacturing method of display apparatus
JP2005174979A (en) * 2003-12-08 2005-06-30 Sony Corp Element arrangement method
JP2006260779A (en) * 2005-03-15 2006-09-28 Seiko Epson Corp Manufacturing method of electrooptical device, droplet discharge device, electrooptical device and electronic apparatus
JP2006278126A (en) * 2005-03-29 2006-10-12 Seiko Epson Corp Manufacturing method of device, manufacturing method of el device, el device and electronic apparatus
WO2006120854A1 (en) * 2005-05-09 2006-11-16 Matsushita Electric Industrial Co., Ltd. Light emission element, light emission element array, method of producing the element and array, and exposure apparatus
KR100690526B1 (en) * 2003-11-11 2007-03-09 세이코 엡슨 가부시키가이샤 Electro-optical apparatus and electronic apparatus
KR100692451B1 (en) * 2003-11-27 2007-03-09 세이코 엡슨 가부시키가이샤 Electro-optic device, semiconductor device, electro-optic device substrate, manufacturing methods thereof, and electronic apparatus
JP2007073316A (en) * 2005-09-06 2007-03-22 Toshiba Matsushita Display Technology Co Ltd Manufacturing method of organic el display device
KR100755398B1 (en) * 2004-05-21 2007-09-04 엘지전자 주식회사 Organic Electro-luminescence Display Device and Method For Fabricating Thereof
US7282779B2 (en) 2003-05-30 2007-10-16 Seiko Epson Corporation Device, method of manufacture thereof, manufacturing method for active matrix substrate, electro-optical apparatus and electronic apparatus
KR100773938B1 (en) * 2005-12-19 2007-11-07 주식회사 대우일렉트로닉스 Manufacturing process of organic light emitting diode
US7301168B2 (en) 2005-03-04 2007-11-27 Samsung Electronics Co., Ltd. Organic light emitting diode display and manufacturing method with partition and emission regions to improve emission characteristics
US7300686B2 (en) 2000-11-28 2007-11-27 Seiko Epson Corporation Organic electro-luminescent device, manufacturing method for the same, and electronic equipment
US7410905B2 (en) 2003-05-30 2008-08-12 Seiko Epson Corporation Method for fabricating thin film pattern, device and fabricating method therefor, method for fabricating liquid crystal display, liquid crystal display, method for fabricating active matrix substrate, electro-optical apparatus, and electrical apparatus
KR100856624B1 (en) * 2005-12-27 2008-09-03 가시오게산키 가부시키가이샤 Manufacturing equipment of display device and manufacturing method of display device
JP2008256820A (en) * 2007-04-03 2008-10-23 Toppan Printing Co Ltd Method of manufacturing optical device, method of manufacturing color filter and method of manufacturing color filter and method of manufacturing organic eectroluminscence device
US7504656B2 (en) 2004-05-25 2009-03-17 Samsung Mobile Display Co., Ltd. Organic light emitting display device and method of fabricating the same
JP2009181932A (en) * 2008-02-01 2009-08-13 Seiko Epson Corp Method for manufacturing organic el element, organic el element, and organic el system
US7754275B2 (en) 2006-05-19 2010-07-13 Seiko Epson Corporation Device, method for manufacturing device, and method for forming film
JP2011049028A (en) * 2009-08-27 2011-03-10 Seiko Epson Corp Manufacturing method of organic el device and manufacturing method of color filter
US8012527B2 (en) * 2005-11-28 2011-09-06 Samsung Electronics Co., Ltd. Manufacturing method of display device and display device therefrom
US20110236675A1 (en) * 2010-03-24 2011-09-29 Fujifilm Corporation Method of forming film
JP2011243594A (en) * 2011-09-09 2011-12-01 Semiconductor Energy Lab Co Ltd Manufacturing method of light-emitting device
CN102834187A (en) * 2010-04-08 2012-12-19 富士胶片株式会社 Method and apparatus for manufacturing thin film
US8490571B2 (en) 2007-02-27 2013-07-23 Kabushiki Kaisha Toshiba Coater, method for manufacturing coated article, and fluid blowing unit
US8866184B2 (en) 2001-02-19 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
WO2015045620A1 (en) * 2013-09-27 2015-04-02 富士フイルム株式会社 Method for producing metal oxide film, metal oxide film, thin-film transistor, display device, image sensor, and x-ray sensor
WO2015166647A1 (en) * 2014-04-30 2015-11-05 株式会社Joled Method for forming functional layer of organic light-emitting device and method for manufacturing organic light-emitting device
CN106960922A (en) * 2017-04-10 2017-07-18 京东方科技集团股份有限公司 Ink jet printing film forming method

Cited By (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7488506B2 (en) 2000-11-28 2009-02-10 Seiko Epson Corporation Organic electro-luminescent device, manufacturing method for the same, and electronic equipment
US7300686B2 (en) 2000-11-28 2007-11-27 Seiko Epson Corporation Organic electro-luminescent device, manufacturing method for the same, and electronic equipment
US9954196B2 (en) 2001-02-19 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US9502679B2 (en) 2001-02-19 2016-11-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US9768405B2 (en) 2001-02-19 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US8866184B2 (en) 2001-02-19 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
JP2003022892A (en) * 2001-07-06 2003-01-24 Semiconductor Energy Lab Co Ltd Manufacturing method of light emitting device
US8197052B2 (en) 2001-07-06 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device
US8425016B2 (en) 2001-07-06 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device
US8752940B2 (en) 2001-07-06 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device
US6911773B2 (en) 2001-12-18 2005-06-28 Seiko Epson Corporation Display apparatus, electric device, and manufacturing method of display apparatus
US6977464B2 (en) 2002-08-21 2005-12-20 Fujitsu Limited Organic EL device and manufacturing method for the same
WO2004019659A1 (en) * 2002-08-21 2004-03-04 Fujitsu Limited Organic el device and production method therefor
KR100711161B1 (en) * 2002-09-12 2007-04-24 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 Organic el display
WO2004026003A1 (en) * 2002-09-12 2004-03-25 Toshiba Matsushita Display Technology Co., Ltd. Organic el display
KR100710763B1 (en) * 2002-09-12 2007-04-24 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 Organic el display
US8932666B2 (en) 2002-09-24 2015-01-13 National Institute Of Advanced Industrial Science And Technology Method and apparatus for manufacturing active-matrix organic el display, active matrix organic el display, method for manufacturing liquid crystal array, liquid crystal array, method and apparatus for manufacturing color filter substrate, and color filter substrate
WO2004030417A1 (en) * 2002-09-24 2004-04-08 Sharp Kabushiki Kaisha Method and apparatus for manufacturing active-matrix organic el display, active-matrix organic el display, method for manufacturing liquid crystal array, liquid crystal array, method and apparatus for manufacturing color filter substrate, and color filter substrate
KR100710760B1 (en) * 2002-09-24 2007-04-24 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 Method and apparatus for manufacturing active-matrix organic el display, active-matrix organic el display, method for manufacturing liquid crystal array, liquid crystal array, method and apparatus for manufacturing color filter substrate, and color filter substrate
US7282779B2 (en) 2003-05-30 2007-10-16 Seiko Epson Corporation Device, method of manufacture thereof, manufacturing method for active matrix substrate, electro-optical apparatus and electronic apparatus
US7410905B2 (en) 2003-05-30 2008-08-12 Seiko Epson Corporation Method for fabricating thin film pattern, device and fabricating method therefor, method for fabricating liquid crystal display, liquid crystal display, method for fabricating active matrix substrate, electro-optical apparatus, and electrical apparatus
KR100690526B1 (en) * 2003-11-11 2007-03-09 세이코 엡슨 가부시키가이샤 Electro-optical apparatus and electronic apparatus
US7336030B2 (en) 2003-11-27 2008-02-26 Seiko Epson Corporation Electro-optic device, semiconductor device, electro-optic device substrate, manufacturing methods thereof, and electronic apparatus
KR100692451B1 (en) * 2003-11-27 2007-03-09 세이코 엡슨 가부시키가이샤 Electro-optic device, semiconductor device, electro-optic device substrate, manufacturing methods thereof, and electronic apparatus
JP4613489B2 (en) * 2003-12-08 2011-01-19 ソニー株式会社 Element array method and a display device
JP2005174979A (en) * 2003-12-08 2005-06-30 Sony Corp Element arrangement method
KR100755398B1 (en) * 2004-05-21 2007-09-04 엘지전자 주식회사 Organic Electro-luminescence Display Device and Method For Fabricating Thereof
US7504656B2 (en) 2004-05-25 2009-03-17 Samsung Mobile Display Co., Ltd. Organic light emitting display device and method of fabricating the same
KR101112534B1 (en) 2005-03-04 2012-03-13 삼성전자주식회사 Organic light emitting display and method for manufacturing the same
US7301168B2 (en) 2005-03-04 2007-11-27 Samsung Electronics Co., Ltd. Organic light emitting diode display and manufacturing method with partition and emission regions to improve emission characteristics
JP2006260779A (en) * 2005-03-15 2006-09-28 Seiko Epson Corp Manufacturing method of electrooptical device, droplet discharge device, electrooptical device and electronic apparatus
JP2006278126A (en) * 2005-03-29 2006-10-12 Seiko Epson Corp Manufacturing method of device, manufacturing method of el device, el device and electronic apparatus
WO2006120854A1 (en) * 2005-05-09 2006-11-16 Matsushita Electric Industrial Co., Ltd. Light emission element, light emission element array, method of producing the element and array, and exposure apparatus
JP2007073316A (en) * 2005-09-06 2007-03-22 Toshiba Matsushita Display Technology Co Ltd Manufacturing method of organic el display device
US8012527B2 (en) * 2005-11-28 2011-09-06 Samsung Electronics Co., Ltd. Manufacturing method of display device and display device therefrom
KR100773938B1 (en) * 2005-12-19 2007-11-07 주식회사 대우일렉트로닉스 Manufacturing process of organic light emitting diode
KR100856624B1 (en) * 2005-12-27 2008-09-03 가시오게산키 가부시키가이샤 Manufacturing equipment of display device and manufacturing method of display device
US7754275B2 (en) 2006-05-19 2010-07-13 Seiko Epson Corporation Device, method for manufacturing device, and method for forming film
US8490571B2 (en) 2007-02-27 2013-07-23 Kabushiki Kaisha Toshiba Coater, method for manufacturing coated article, and fluid blowing unit
JP5349289B2 (en) * 2007-02-27 2013-11-20 株式会社東芝 Coating apparatus
JP2008256820A (en) * 2007-04-03 2008-10-23 Toppan Printing Co Ltd Method of manufacturing optical device, method of manufacturing color filter and method of manufacturing color filter and method of manufacturing organic eectroluminscence device
JP2009181932A (en) * 2008-02-01 2009-08-13 Seiko Epson Corp Method for manufacturing organic el element, organic el element, and organic el system
JP2011049028A (en) * 2009-08-27 2011-03-10 Seiko Epson Corp Manufacturing method of organic el device and manufacturing method of color filter
US20110236675A1 (en) * 2010-03-24 2011-09-29 Fujifilm Corporation Method of forming film
JP2011200761A (en) * 2010-03-24 2011-10-13 Fujifilm Corp Method for producing thin film
CN102834187A (en) * 2010-04-08 2012-12-19 富士胶片株式会社 Method and apparatus for manufacturing thin film
JP2011243594A (en) * 2011-09-09 2011-12-01 Semiconductor Energy Lab Co Ltd Manufacturing method of light-emitting device
JP2015070082A (en) * 2013-09-27 2015-04-13 富士フイルム株式会社 Method of producing metal oxide film, metal oxide film, thin film transistor, display, image sensor and x-ray sensor
WO2015045620A1 (en) * 2013-09-27 2015-04-02 富士フイルム株式会社 Method for producing metal oxide film, metal oxide film, thin-film transistor, display device, image sensor, and x-ray sensor
JPWO2015166647A1 (en) * 2014-04-30 2017-04-20 株式会社Joled Method for manufacturing a forming method and an organic light emitting device of the functional layer of the organic light emitting devices
US9640592B2 (en) 2014-04-30 2017-05-02 Joled Inc. Method for forming functional layer of organic light-emitting device and method for manufacturing organic light-emitting device
WO2015166647A1 (en) * 2014-04-30 2015-11-05 株式会社Joled Method for forming functional layer of organic light-emitting device and method for manufacturing organic light-emitting device
CN106960922A (en) * 2017-04-10 2017-07-18 京东方科技集团股份有限公司 Ink jet printing film forming method

Also Published As

Publication number Publication date Type
JP4048687B2 (en) 2008-02-20 grant

Similar Documents

Publication Publication Date Title
Hebner et al. Ink-jet printing of doped polymers for organic light emitting devices
US6517996B1 (en) Method of manufacturing full-color organic electro-luminescent device
US20020001026A1 (en) Production of organic luminescence device
US7116308B1 (en) Backlit displays
EP0954205A2 (en) Organic eletroluminescent device and method for producing it
US20040157167A1 (en) Manufacturing method of organic electroluminescent device, organic electroluminescent device, and electronic apparatus
US20050177343A1 (en) Method and apparatus for forming a pattern, device and electronic apparatus
US6825061B2 (en) Method of manufacturing organic EL device and ink composition for organic EL device
US6878312B1 (en) Composition, film manufacturing method, as well as functional device and manufacturing method therefore
US20030025446A1 (en) Manufacturing method and structure of OLED display panel
WO1998024271A1 (en) Method of producing organic el elements, organic el elements and organic el display device
JP2000353594A (en) Board for patterning thin film
US7115434B2 (en) Method for precisely forming light emitting layers in a semiconductor device
JP2003249375A (en) Display device, electronic equipment and method for manufacturing display device
GB2336553A (en) Selective deposition of organic films
JPH11271753A (en) Thin film forming method, display device, and color filter
US20040086631A1 (en) Ink jet printing device and method
US6858464B2 (en) Method of manufacturing light emitting device
JP2003332073A (en) Light emitting device and its manufacturing method
US20020041302A1 (en) Thin film formation method by ink jet method, ink jet apparatus, production method of organic EL device, and organic EL device
JP2004063359A (en) Electroluminescence display and its manufacturing method
JP2006309994A (en) Base plate for transfer, transfer method, and manufacturing method of display device
CN1921140A (en) Organic light emitting display and method for fabricating the same
JP2000208254A (en) Manufacture of organic el element and organic el display unit
JP2004327272A (en) Manufacturing device and light emitting device

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060516

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070123

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070323

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070731

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070914

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20071106

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20071119

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101207

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101207

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111207

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111207

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121207

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121207

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131207

Year of fee payment: 6

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees