JP2001249166A - Circuit device, package member, circuit manufacturing method, circuit test method and device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To heat a circuit element up to a test temperature with a simple structure without requiring a large scale thermostat, in a circuit device, which is a test object, for measuring electrically a life time of the circuit element at the prescribed test temperature. SOLUTION: A thermo-element 210 for heating the circuit element 202 up to the test temperature by thermoelectric effect is installed, and when a life test is executed, the circuit element 202 is heated up to the test temperature by thermoelectric effect of the thermo-element 210. The thermo-element 210 can accurately control the temperature by a current-carrying quantity, and can switch between heating and cooling according to the current-carrying direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit device in which the circuit characteristics of a circuit element are electrically measured at a predetermined test temperature, a circuit manufacturing method for manufacturing the circuit device, and the circuit characteristics of the circuit element of the circuit device. The present invention relates to a circuit test method and apparatus for electrically measuring at a predetermined test temperature.

[0002]

2. Description of the Related Art At present, integrated circuit devices are used for various purposes, and their integration and life are increasing. However, when a current is applied to a metal in a certain direction, ions move in the opposite direction, which may cause disconnection or the like of fine metal wiring.

The above phenomenon is called EM, and there is an EM life test as a method for testing the life of an integrated circuit device caused by the EM. Here, a conventional example of an integrated circuit device that performs the EM life test and a circuit test device that performs the EM life test on the integrated circuit device will be described below with reference to FIGS.

FIG. 15 is a vertical sectional side view showing an integrated circuit device, FIG. 16 is a plan view showing the outer shape of a wiring pattern as a circuit element, FIG. 17 is a circuit diagram showing an equivalent circuit of the wiring pattern, and FIG. FIG. 19 is a schematic diagram showing the overall structure of a circuit test system which is a test apparatus. FIG. 19 is a flowchart showing a main routine of a circuit test method by the circuit test system.
FIG. 20 is a flowchart showing a subroutine.

[0005] First, an integrated circuit device 100 exemplified as a conventional example is, for example, a prototype under development which is to be tested for EM life. As shown in FIG. And a package member 102.

The circuit board 101 is made of, for example, a semiconductor substrate made of silicon. As shown in FIG. 16, a wiring pattern 104 made of a metal layer is formed on the surface thereof. A pair of current terminals 105 and a pair of voltage terminals 106 are connected one by one.

The package member 102 comprises a single ceramic package body 107 and a plurality of metal lead terminals 108, and these plurality of lead terminals 108 are arranged around the package body 107 as shown in FIG. ing. The circuit board 101 is mounted on the center of the upper surface of the package body 107, and the terminals 105 and 106 of the circuit board 101 and the lead terminals 108 of the package member 102 are individually connected by bonding wires 109.

A circuit test system 11 which is a circuit test apparatus
0 indicates a plurality of test boards 11 as shown in FIG.
1. One thermostat 112, control unit 11
The integrated circuit device 100 is detachably mounted on each of the plurality of test boards 111.

More specifically, a plurality of circuit sockets are mounted on the surface of the test board 111 (not shown),
The integrated circuit device 100 is provided in each of the plurality of circuit sockets.
Are detachably mounted one by one. This circuit socket is mounted on the printed wiring of the test board 111,
The printed wiring is connected to the control unit 113 by a connector or the like (not shown).

The constant temperature bath 112 is composed of a box-shaped bath main body having good heat insulation properties and a heater mechanism for changing the internal temperature (not shown). The thermostat 112 having such a structure is provided with the control unit 1 in which the integrated circuit device 100 is mounted.
A plurality of test boards 111 connected to 13 are exchangeably held in a bath as device holding means, and the temperature in the bath is varied in response to an external operation.

The control unit 113 is composed of a computer system in which an appropriate control program is installed in advance, and integrally controls a large number of integrated circuit devices 100 and the thermostat 112 by processing operations corresponding to the control program. That is, the control unit 113 measures the electric resistance of the wiring pattern 104 of the integrated circuit device 100 as the resistance measuring means, and uses the wiring pattern 1 as the element energizing means.
04 is supplied with electric current, and the thermostat 112 is used as a temperature control means.
The temperature in the tank is controlled.

With the above-described configuration, the circuit test system 110 can test the EM life of the wiring pattern 104. In that case, the wiring pattern 104
Is mounted on the package body 10
2, an integrated circuit device 100 to be tested is prepared.

As shown in FIG. 19, as an initial setting for improving the test accuracy of the EM life test, one is selected from a plurality of types of test temperatures and data is set in the control unit 113 (step S1). S1), an EM life test is executed (step S2).

In this case, as shown in FIG. 20, a plurality of integrated circuit devices 100 are mounted on each of a plurality of test boards 111 (step T1). Tank 11
2 (step T2).

Next, by controlling the operation of the control unit 113, the inside of the constant temperature bath 112 is heated to the test temperature described above (step T3), and in this state, the control unit 113 controls each of the wiring patterns 104 of the large number of integrated circuit devices 100. Are individually measured from the voltage terminal 106 (step T4). Thus, the wiring pattern 10 in a state where the test current is not supplied while being heated to the test temperature.
Since the electrical resistance of 4 is found, the value of "1.1"
An allowable resistance obtained by multiplying by a coefficient such as the above is calculated and registered (step T5).

Next, a test current is individually applied to each of the large number of wiring patterns 104 from the current terminal 105 by the control unit 113 (step T6). At this time, the large number of wiring patterns 104 are divided into a plurality of groups. In each of these groups, one of a plurality of types of test currents is supplied.

At the same time as the start of the application of the test current, the accumulation of time is started, and the electric resistance of the wiring pattern 104 is continuously measured (step T7). When the measured electric resistance exceeds the allowable resistance (step T8), the time is recorded for each wiring pattern 104 (step T9).

This life test is performed for all the wiring patterns 104.
Is completed (step T10), as shown in FIG.
From the time when the electric resistance exceeds the allowable resistance, the time during which half of the wiring pattern 104 has a life is calculated for each of the plurality of types of test currents (step S3).

However, in this case, the life time is not measured for each of the plurality of test temperatures, so that the test temperature is switched and the life test as described above is repeated (steps S1 to S4). Are also subjected to the life test. This means that the life time of the wiring pattern 104 has been measured with a plurality of types of test currents and a plurality of types of test temperatures, so that the temperature dependence of the life time is detected in accordance with the difference in the test temperatures (step S5). ), Current density dependence of life time is detected according to the difference of test current
(Step S6).

In the circuit test system 110 as described above, the EM life test is performed by applying a plurality of types of test currents and a plurality of types of test temperatures to the wiring patterns 104 of a large number of integrated circuit devices 100. Time can be measured accurately.

[0021]

In the circuit test system 110 described above, in order to accurately measure the life times of the wiring patterns 104 of a large number of integrated circuit devices 100, the temperature of the thermostatic bath 1 is reduced.
12, the wiring patterns 1 of a large number of integrated circuit devices 100
04 is heated to the test temperature. However, the thermostat 112
Since the temperature is different between the upper and lower portions inside, it is difficult to strictly maintain a large number of wiring patterns 104 at the same test temperature.

Further, the thermostat 112 is not preferable because the equipment is large-scale and the power consumption is enormous. However, in the above-described circuit test system 110, the fine wiring pattern 1
Since the whole of the large-capacity internal space of the thermostat 112 is heated to the test temperature in order to heat the 04 to the test temperature, its energy efficiency is not good.

In addition, in order to execute the EM life test at a plurality of test temperatures, if there is only one thermostat 112, it is necessary to switch the test temperature and repeat the life test, so that the work is delayed. In order to complete the life test at one time, a plurality of thermostats 112 are required, so that the scale of the apparatus becomes excessive.

An integrated circuit device for solving the above-mentioned problems is disclosed in, for example, Japanese Patent Application Laid-Open No. 11-204607 and
07-201944 and the like. In the integrated circuit devices disclosed in these publications, a heating resistor is formed near a wiring pattern to be tested, and the wiring pattern is set to a test temperature by the heating resistor.

However, it is difficult to precisely control the heating temperature of the heating resistor, and the wiring pattern cannot be accurately maintained at the test temperature, so that the accuracy of the EM life test decreases. Furthermore, depending on the life test, the circuit element under test may need to be cooled.
Heating resistors cannot cool circuit elements.

The present invention has been made in view of the above-described problems, and has a circuit device capable of easily performing a life test.
At least one of a package member of a circuit device capable of easily performing a life test, a circuit manufacturing method for manufacturing a circuit device capable of easily performing a life test, and a circuit test method and a device capable of easily performing a life test of the circuit device. The purpose is to provide.

[0027]

A circuit device according to the present invention is a circuit device to be tested in which circuit characteristics of circuit elements are electrically measured at a predetermined test temperature. It has a thermoelectric element for the test temperature.

Therefore, when measuring the circuit characteristics of the circuit device of the present invention, the circuit element is set to a predetermined test temperature due to the thermoelectric effect of the thermoelectric element. Since the temperature of the thermoelectric element changes due to the thermoelectric effect, the temperature is controlled to a desired temperature by the amount of electricity. In general, the direction of heat conduction of a thermoelectric element is switched depending on the direction of conduction, so that heating and cooling of circuit elements are performed as desired.

The circuit characteristics of the circuit element measured at the test temperature as described above include, for example, the EM lifetime of the wiring pattern, the on-current of the transistor (temperature dependence), and the threshold voltage of the transistor (temperature dependence). ), Etc.

In the above-described circuit device, it is possible that the thermoelectric element and the circuit element are formed on the same circuit board. In this case, since the thermoelectric element is also formed on the circuit board on which the circuit element to be tested is formed, there is no need to arrange a separate thermoelectric element near the circuit element.

In the above-described circuit device, the circuit element may be formed on an upper surface of the circuit board, and the thermoelectric element may be arranged at a position other than above the circuit element. . In this case, since the circuit element is located on the upper surface of the circuit board, the circuit element on which the test has been completed is observed from above the circuit board. Since the thermoelectric element is located near the circuit element but not above, the observation of the circuit element is not hindered by the thermoelectric element.

In the above-described circuit device, the thermoelectric element is configured such that both ends of one bonding electrode and a pair of terminal electrodes are n.
It is also possible that the circuit element comprises a Peltier element connected in a П-shape via a type semiconductor and a p-type semiconductor individually, and the circuit element is located above a junction electrode of the thermoelectric element.
In this case, when a predetermined current is applied to the pair of terminal electrodes, the junction electrode of the П-shaped Peltier element reaches a predetermined temperature, and the circuit element located above the junction electrode is set to the test temperature.

In the above-described circuit device, it is possible to provide a heat diffusing means for diffusing heat into the gap between the circuit element and the thermoelectric element to make the heat uniform. In this case, when the circuit element is brought to a predetermined test temperature due to a change in the temperature of the junction electrode of the thermoelectric element, the heat conducted between the thermoelectric element and the circuit element is diffused by the heat diffusion means and made uniform.

In the above-described circuit device, a package member including one package body and a plurality of lead terminals is also provided, and the circuit element is formed on a circuit board separate from the thermoelectric element. The circuit board and the thermoelectric element may be mounted on a package body of the package member, and the thermoelectric element and the circuit element may be individually connected to a plurality of the lead terminals.

In this case, since the minute circuit board is mounted on the large package body, the handling is easy.
Since the fine circuit elements and the thermoelectric elements are connected to the large lead terminals, it is easy to conduct electricity. Since the circuit board on which the circuit element to be tested is formed and the thermoelectric element are mounted on the package member, it is not necessary to arrange a separate thermoelectric element near the circuit board.

In the above-described circuit device, the thermoelectric element is configured such that both ends of one bonding electrode and a pair of terminal electrodes are n.
It is also possible that the circuit board comprises a Peltier element which is connected in a П shape via a type semiconductor and a p-type semiconductor individually, and the circuit board is arranged above a junction electrode of the thermoelectric element. In this case, when a predetermined current is applied to the pair of terminal electrodes, the junction electrode reaches a predetermined temperature in the П-type Peltier element, so that the circuit element is tested at the test temperature via the circuit board located above the junction electrode. It is said.

In the above-described circuit device, it is possible to provide a heat diffusing means for diffusing heat into the gap between the circuit board and the thermoelectric element to make the heat uniform. In this case, when the circuit element is brought to a predetermined test temperature via the circuit board due to a change in the temperature of the junction electrode of the thermoelectric element, the heat conducted between the thermoelectric element and the circuit board is diffused by the heat diffusion means and made uniform. Is done.

[0038] In the above-described circuit device, the circuit element may be formed of a wiring pattern in which a test current is applied and a life time of an EM life is measured as a circuit characteristic from a change in electric resistance. In this case, when a test current is applied and the life time of the EM life is measured from a change in electric resistance, the wiring pattern as a circuit element is set to a test temperature by a thermoelectric element.

The package member of the present invention is a package member on which a circuit board on which circuit characteristics of circuit elements of a circuit device to be tested is electrically measured at a predetermined test temperature is mounted. Package body, a plurality of lead terminals to which circuit elements of the circuit board are partially connected, and a thermoelectric effect which is connected to a part of the plurality of lead terminals and passes the circuit element through the circuit board. And a thermoelectric element having the above-mentioned test temperature.

Therefore, when the circuit characteristics are measured by mounting the circuit board on the package member of the present invention, the fine circuit board is mounted on the large package body, so that the mechanical handling becomes easy and the fine circuit element Is electrically connected to a large lead terminal, which facilitates electrical handling. Since the temperature of the circuit board is controlled by the thermoelectric effect of the thermoelectric element, the circuit elements of the circuit board are set to a predetermined test temperature. Since the temperature of the thermoelectric element changes due to the thermoelectric effect, the temperature is controlled to a desired temperature by the amount of electricity. In general, the direction of heat conduction of a thermoelectric element is switched according to the direction of conduction, so that heating and cooling of the circuit board are performed as desired.

In the above-mentioned package member, the thermoelectric element may be a Peltier element in which both ends of one bonding electrode and a pair of terminal electrodes are connected in a П shape through an n-type semiconductor and a p-type semiconductor individually. And the bonding electrode may be mounted below a position where the circuit board is arranged. In this case, when a predetermined current is applied to the pair of terminal electrodes, the junction electrode of the は -shaped Peltier element reaches a predetermined temperature. Therefore, the circuit element of the circuit board located above the junction electrode is set to the test temperature. You.

In the above-described package member, it is also possible to provide a heat diffusing means for diffusing heat to the gap between the position where the circuit board is arranged and the thermoelectric element to make it uniform. In this case, when the circuit board is brought to a predetermined test temperature due to a change in the temperature of the bonding electrode of the thermoelectric element, heat conducted between the thermoelectric element and the circuit board is diffused by the heat diffusion means and made uniform.

A circuit manufacturing method according to the present invention is a circuit manufacturing method for manufacturing a circuit device to be tested in which circuit characteristics of circuit elements formed on a circuit board are electrically measured at a predetermined test temperature. A thermoelectric element for setting the circuit element to the test temperature by a thermoelectric effect is also formed on the circuit board.

Accordingly, when a circuit device to be tested is manufactured by the circuit manufacturing method of the present invention, a thermoelectric element is formed together with the circuit element on the circuit board of the circuit device. For this reason, when measuring the circuit characteristics of the manufactured circuit device,
The circuit element is set to a predetermined test temperature by the thermoelectric effect of the thermoelectric element.

The first circuit test method of the present invention is a circuit test method for electrically measuring circuit characteristics at a predetermined test temperature of a circuit element of a circuit device to be tested. A circuit characteristic of the circuit element is measured while applying a predetermined current to the thermoelectric element. Therefore, in the circuit test method of the present invention, when measuring the circuit characteristics of the circuit elements of the circuit device of the present invention, a predetermined current is also supplied to the thermoelectric element. The element is taken to the test temperature.

According to a second circuit test method of the present invention, a wiring pattern formed as a circuit element on a circuit board of a circuit device to be tested is set to a predetermined test temperature and a predetermined test current is applied to the wiring pattern. E as the circuit characteristic of the pattern
A circuit test method for testing M life by a change in electric resistance, wherein the test current is applied to the wiring pattern of the circuit device of the present invention and a unique current is applied to the thermoelectric element. Therefore, in the circuit test method of the present invention, when a test current is applied to the wiring pattern of the circuit device of the present invention, a predetermined current is also applied to the thermoelectric element. The wiring pattern is set to the test temperature.

A third circuit test method of the present invention is a circuit test method for electrically measuring circuit characteristics by setting a circuit element formed on a circuit board of a circuit device to be tested to a predetermined test temperature. Mounting the circuit board on a package body of the package member of the present invention, connecting circuit elements of the circuit board to lead terminals of the package member, and applying a predetermined current to the thermoelectric element to lead the package member. The circuit characteristics of the circuit elements of the circuit board are measured from the terminals.

Therefore, according to the circuit test method of the present invention, the fine circuit board is mounted on the large package body, so that it is easy to handle mechanically, and the fine circuit elements are connected to the large lead terminals. Handling is also easy. When measuring the circuit characteristics of the circuit element of the circuit device of the present invention, a predetermined current is also applied to the thermoelectric element of the package member, and the circuit element is set to the test temperature by the thermoelectric effect of the thermoelectric element due to the energization. .

According to a fourth circuit test method of the present invention, a wiring pattern formed as a circuit element on a circuit board of a circuit device to be tested is set to a predetermined test temperature and a predetermined test current is applied to the wiring pattern. E as the circuit characteristic of the pattern
A circuit test method for testing M life by a change in electric resistance, wherein the circuit board is mounted on a package body of a package member of the present invention, and a wiring pattern of the circuit board is connected to a lead terminal of the package member. The test current is supplied from the lead terminal of the package member to the wiring pattern of the circuit board, and a current specific to the thermoelectric element is supplied.

Therefore, in the circuit test method of the present invention, the fine circuit board is mounted on the large package body, so that it can be easily handled mechanically, and the fine wiring pattern is connected to the large lead terminals, so that the electric circuit is electrically connected. Handling is also easy. When a test current is applied to the wiring pattern of the circuit device of the present invention, a predetermined current is also applied to the thermoelectric element of the package member. Therefore, the wiring pattern is set to the test temperature by the thermoelectric effect of the thermoelectric element due to the energization. .

The first circuit test apparatus of the present invention is a circuit test apparatus for electrically measuring circuit characteristics by setting a circuit element formed on a circuit board of a circuit device to be tested to a predetermined test temperature. The circuit device according to the present invention includes an element energizing unit for applying a predetermined current to the thermoelectric element, and a characteristic measuring unit for measuring a circuit characteristic of the circuit element.

Therefore, in the circuit test method using the circuit test apparatus of the present invention, the characteristic measuring means measures the circuit characteristics of the circuit elements of the circuit apparatus of the present invention. However, since the element energizing means applies a predetermined current to the thermoelectric element on the circuit board, the circuit element is set to the test temperature by the thermoelectric effect of the thermoelectric element due to the energization.

The second circuit test apparatus of the present invention is a circuit test apparatus for electrically measuring circuit characteristics by setting a circuit element formed on a circuit board of a circuit device to be tested to a predetermined test temperature. A package member of the present invention on which the circuit board is mounted, element energizing means for applying a predetermined current to a thermoelectric element of the package member, and characteristic measuring means for measuring circuit characteristics of circuit elements of the circuit board; Is provided.

Therefore, according to the circuit test method using the circuit test apparatus of the present invention, the circuit board of the circuit device to be tested is mounted on the package member of the present invention, and the circuit characteristics of the circuit elements of the circuit board mounted on the package member are determined. Is measured by the characteristic measuring means. However, since the element energizing means applies a predetermined current also to the thermoelectric element on the circuit board, the circuit element is set to the test temperature by the thermoelectric effect of the thermoelectric element due to the energization.

A third circuit test apparatus according to the present invention is characterized in that a wiring pattern formed as a circuit element on a circuit board of a circuit device to be tested is set to a predetermined test temperature, and a predetermined test current is applied to the wiring pattern. E as the circuit characteristic of the pattern
A circuit test apparatus for testing M life by a change in electric resistance, a resistance measuring means for measuring an electric resistance of a wiring pattern of the circuit device of the present invention, and an element energizing means for applying the test current to the wiring pattern. And an element energizing means for applying a current unique to the thermoelectric element of the circuit board.

Therefore, in the circuit test method using the circuit test apparatus of the present invention, the element energizing means applies a current to the wiring pattern of the circuit apparatus of the present invention, and the electric resistance of the wiring pattern is measured by the resistance measuring means. However, since the element energizing means applies a unique current to the thermoelectric element on the circuit board, the wiring pattern is set to the test temperature by the thermoelectric effect of the thermoelectric element due to the energization.

The fourth circuit test apparatus of the present invention sets a wiring pattern formed as a circuit element on a circuit board of a circuit device to be tested to a predetermined test temperature and applies a predetermined test current to the wiring pattern. E as the circuit characteristic of the pattern
A circuit test apparatus for testing M life by a change in electric resistance, wherein an electric resistance of a package member of the present invention on which the circuit board is mounted and a wiring pattern of the circuit board mounted on the package member are measured. Resistance measuring means;
An element energizing unit for applying the test current to the wiring pattern of the circuit board, and an element energizing unit for applying a current unique to the thermoelectric element of the package member.

Therefore, in the circuit testing method using the circuit testing apparatus of the present invention, the circuit board of the circuit device to be tested is mounted on the package member of the present invention, and the element pattern is supplied to the wiring pattern of the circuit board mounted on the package member. The means supplies a current, and the electric resistance of the wiring pattern is measured by the resistance measuring means. However, since the element energizing means applies a unique current to the thermoelectric element on the circuit board, the wiring pattern is set to the test temperature by the thermoelectric effect of the thermoelectric element due to the energization.

[0059]

FIG. 1 shows a first embodiment of the present invention.
This will be described below with reference to FIG. However, in the following description, the same portions as those of the above-described conventional example will be denoted by the same names and symbols, and detailed description thereof will be omitted.

FIG. 1 is a plan view showing the structure of a wiring pattern or a Peltier element which is a thermoelectric element of the integrated circuit device according to the first embodiment of the present invention, and FIG. -A cross-sectional view, FIG. 3 is a schematic diagram showing the entire structure of the circuit test apparatus of the present embodiment, FIGS. 4 and 5 are process diagrams showing a circuit manufacturing method for manufacturing the integrated circuit device of the present embodiment, 6 is a flowchart showing a circuit test method for measuring the lifetime of the integrated circuit device according to the present embodiment.

In the integrated circuit device 200 of the present embodiment, similarly to the above-described integrated circuit device 100, a circuit board 201 is mounted on a package member 102 as shown in FIG. Wiring pattern 20
2, a pair of current terminals 203 and a pair of voltage terminals 204 are formed.

However, the integrated circuit device 20 of the present embodiment
In the case of No. 0, unlike the above-described integrated circuit device 100, a Peltier element 210 is also formed as a thermoelectric element on the circuit board 201, and the wiring pattern 202 is located above the Peltier element 210.

More specifically, as shown in FIGS. 1 and 2, a pair of terminal electrodes 211,
212 are formed in parallel, and an n-type semiconductor 213 and a p-type semiconductor 214 are individually stacked on the upper surfaces of the pair of terminal electrodes 211 and 212, respectively.

Since one bonding electrode 215 is laminated on the upper surfaces of the pair of semiconductors 213 and 214, the П-type Peltier device 210 is formed by this. In addition,
In the Peltier device 210, the bonding electrode 215 is formed in a rectangular shape that covers the wiring pattern 202 in a planar shape, and semiconductors 213 and 214 are provided at both ends in the longitudinal direction.
And terminal electrodes 211 and 212 are located.

On the upper surface of the joining electrode 215 of the Peltier element 210, a heat diffusion plate 216 as heat diffusion means is laminated, and on the surface of the heat diffusion plate 216, a wiring pattern 202 is laminated via an insulating layer 217. ing. Thermal diffusion plate 21
Numeral 6 is made of a metal having good thermal conductivity such as aluminum, and has a number of slits 218 formed in its longitudinal direction.

The current terminal 203 and the voltage terminal 204 are connected to both ends of the wiring pattern 202. The element terminals 219 and 212 of the Peltier element 210 are also connected to the element terminals 219. A terminal 219 is provided in parallel with the current terminal 203 and the voltage terminal 204.

The circuit test system 220 as the circuit test apparatus of the present embodiment is the same as the circuit test system 110 described above.
In the same manner as in the above, a plurality of test boards 111 and one control unit 221 are provided.
Is not provided. The control unit 221 is formed of a computer system in which an appropriate control program is mounted in advance, and controls the operation of many integrated circuit devices 200 by processing operations corresponding to the control program.

That is, the control unit 221 according to the present embodiment applies a test current to the wiring pattern 202 of the integrated circuit device 200 as element energizing means and the wiring pattern 202 as resistance measuring means, similarly to the control unit 113 described above. By measuring the electrical resistance of the wiring pattern 202, the EM life of the wiring pattern 202 is measured as a characteristic measuring means. However, the aforementioned control unit 1
Unlike the device 13, the temperature control of the thermostatic bath 112 is not executed, and a predetermined current is supplied to the Peltier device 210 as a device supplying device.

Here, the integrated circuit device 20 of the present embodiment
Hereinafter, a circuit manufacturing method for manufacturing 0 will be briefly described. First, a general silicon circuit board 201 is prepared, and a SiO ₂ layer 231 as a silicon oxide is grown on the surface thereof, as shown in FIG.

Next, as shown in FIG.
The O ₂ layer 231 is etched by photolithography to form a pair of openings 232, and a metal is deposited on the surface of the circuit board 201 exposed at the bottoms of the pair of openings 232 by a sputtering method to form the terminal electrodes 211, 213.
Form 212.

Next, as shown in FIG. 4C, a silicon oxide 234 such as BPSG is deposited on the surfaces of the terminal electrodes 211 and 212 to fill the opening 232, and the silicon oxide 234 is Etching is performed by lithography to form a pair of openings 235, and as shown in FIG. 4D, the n / p type semiconductor 21 is formed on the surfaces of the terminal electrodes 211 and 212 exposed at the bottoms of the pair of openings 235.
3,214 are deposited one by one.

Next, as shown in FIG. 5A, the SiO ₂ layer 231 protruding into the gap between the n / p type semiconductors 213 and 214 is etched to be flush with the n / p type semiconductors 213 and 214 by photolithography. The pair of silicon oxides 234 are etched by a technique to form through holes reaching from the surface to the outer ends of the terminal electrodes 211 and 212.

Next, the n / p type semiconductor 21 which has become flush
Peltier element 210 is completed by depositing a metal on the surface of 3,214 and SiO ₂ layer 231 by a sputtering method to form junction electrode 215, and depositing a metal on a through hole of silicon oxide 234 by a sputtering method. Thus, the element wiring 236 is formed.

Next, as shown in FIG. 4B, a metal is deposited on the surface of the bonding electrode 215 by a sputtering method, and then a large number of slits 2 are formed by photolithography.
18 is formed to form a heat diffusion plate 216, and FIG.
As shown in (c), a silicon oxide such as BPSG is deposited on the surface of the heat diffusion plate 216 by a sputtering method to form an insulating layer 217.

Next, as shown in FIG.
A metal is deposited on the surface of the semiconductor device 17 by a sputtering method and then patterned by a photolithography technique to form a wiring pattern 202. The current / voltage terminals 203 and 2 connected to the wiring pattern 202 are formed in the same manner as in the related art.
An element terminal 219 connected to the element wiring 04 and the element wiring 236 is formed.

In the above-described configuration, the EM lifetime of the wiring pattern 202 of the integrated circuit device 200 of the present embodiment is tested by the circuit test system 220 of the present embodiment. In this case, a plurality of test boards 111 are connected to one control unit 221 and installed at a position of normal temperature and normal pressure, and as shown in FIGS. The predetermined number of integrated circuit devices 200 are mounted (step E1).

Next, if necessary, a large number of integrated circuit devices 2
00 is divided into a plurality of groups corresponding to a plurality of types of test temperatures, and the Peltier elements 210 of the plurality of groups of integrated circuit devices 200 are each heated to a plurality of types of test temperatures by the control unit 221 (step E2).

At this time, many integrated circuit devices 200
For example, the test board 111 is grouped into a plurality of types of test temperatures for each row of the array on the surface. Further, heat generation of the Peltier element 210 is executed by applying a predetermined current from the control unit 221.
The heat generation temperature is controlled so that the wiring pattern 202 becomes a test temperature.

Next, the electrical resistance of the wiring patterns 202 of a large number of integrated circuit devices 200 heated to a plurality of test temperatures for each of a plurality of groups is determined by the control unit 22.
1 to measure individually from the voltage terminal 204 (step E
3) The electric resistance of the wiring pattern 202 in a state where the test current is not supplied while being heated to the test temperature is "1.1".
Then, an allowable resistance obtained by multiplying by such a coefficient is calculated and registered (step E4).

Next, if necessary, a large number of integrated circuit devices 2
00 is divided into a plurality of groups corresponding to a plurality of types of test currents, and the control unit 221 supplies a plurality of types of test currents from the current terminals 203 to the wiring patterns 202 of the plurality of groups of integrated circuit devices 200 (step E5).

At this time, many integrated circuit devices 200
For example, in each row of the array on the surface of the test board 111, a plurality of types of test currents are divided into a plurality of types of test currents so as to be different from groups of a plurality of types of test temperatures. Are grouped by a combination of a plurality of types of test temperatures and a plurality of types of test currents.

At the same time as the start of the application of the test current, the integration of time is started, and the electric resistance of the wiring pattern 202 is continuously measured (step E6). When the measured electric resistance exceeds the allowable resistance (step E7), the time is recorded for each wiring pattern 202 (step E8).

This life test indicates that all the wiring patterns 202
(Step E9), the time during which half of the wiring patterns 202 have a lifetime is calculated for each group of combinations of the test temperature and the test current from the time when the electric resistance exceeds the allowable resistance (Step E10). .

Since the life time of the wiring pattern 202 has been measured at a plurality of types of test currents and a plurality of types of test temperatures, the life time of the wiring pattern 202 corresponding to the difference in the test temperature will be described below. Is detected (step E11), and the current density dependency of the lifetime is detected in accordance with the difference in the test current (step E12).

In the circuit test system 220 of this embodiment, the EM life test is executed by applying a plurality of types of test currents and a plurality of types of test temperatures to the wiring patterns 202 of a large number of integrated circuit devices 200. It is possible to accurately measure the lifetime.

However, the integrated circuit device 20 of the present embodiment
0 is a Peltier element 210 below the wiring pattern 202.
Are formed, and the wiring pattern 202 is heated to a test temperature by the Peltier element 210. For this reason, the circuit test system 220 that performs the EM life test on the integrated circuit device 200 of the present embodiment does not require a large-scale constant temperature bath that heats the integrated circuit device 200 to the test temperature. Power consumption can be reduced.

In particular, as described above, a large number of integrated circuit devices 2
In the case where the EM life test is performed at a plurality of types of test temperatures, conventionally, a plurality of thermostats or a plurality of operations using one thermostat was required. Thus, the EM life test at a plurality of test temperatures can be completed in one operation without the need of a plurality of thermostats.

Further, the integrated circuit device 20 of the present embodiment
In the case of 0, the wiring pattern 202 is heated by the thermoelectric effect of the Peltier element 210 which is a thermoelectric element. Therefore, unlike the heating resistor, the wiring pattern 202 can be accurately heated to the test temperature by controlling the amount of electricity, The EM life test can be executed with high accuracy.

In particular, integrated circuit device 200 of the present embodiment
In this example, the Peltier element 210 is formed in a П shape, and the wiring pattern 202 is located above the bonding electrode 215.
02 can be satisfactorily heated with a simple structure.

Further, the integrated circuit device 20 of the present embodiment
In the case of 0, since the heat diffusion plate 216 is formed in the gap between the wiring pattern 202 and the Peltier device 210, the heat conducted between the Peltier device 210 and the wiring pattern 202 is diffused by the heat diffusion plate 216 to be uniform. Therefore, the entire wiring pattern 202 can be uniformly heated to the test temperature, and the EM life test can be performed with higher accuracy.

Generally, when the EM life test is completed, the wiring pattern 202 of the integrated circuit device 200 is observed from above.
0, the wiring pattern 20 is located above the Peltier element 210.
2 is located, and the Peltier element 210 does not interfere when the wiring pattern 202 is observed from above.

The present invention is not limited to the above-described embodiment, but allows various modifications without departing from the gist of the present invention. For example, in the above embodiment, the bonding electrode 215 of the Peltier element 210 is formed in a rectangular shape that covers the wiring pattern 202 in a planar shape, and the semiconductors 213 and 214 and the terminal electrodes 211 and 212 are located at both ends in the longitudinal direction. However, as shown in FIGS. 7 and 8, the n / p type semiconductors 231 and 23 of the Peltier element 230 are
2 and the terminal electrodes 233 and 234 can be positioned at both ends in the short direction.

Further, in the above embodiment, the Peltier element 210 and the heat diffusion plate 216 are exemplified to be located only below the wiring pattern 202. However, as shown in FIGS. It is also possible to form the protrusions 241 on both sides in the direction, and to position the heat diffusion plate 240 below and on both sides of the wiring pattern 202. When the heat diffusion plate 216 is formed as described above, as shown in FIG. 11, the metal layer 242 may be deposited on a thick film, and then the concave portion may be etched at the center.

Note that the bonding electrode 21 of the Peltier device 210
5 are formed on both sides in the lateral direction of the Peltier element 21.
0 can be similarly positioned below and on both sides of the wiring pattern 202 (not shown).
As shown in (1), a pair of Peltier elements 250 can be arranged on both sides of the wiring pattern 202 one by one.

In the above embodiment, the wiring pattern 202 is illustrated as a circuit element to be tested, and the EM lifetime is tested by heating the wiring pattern 202 with the Peltier element 250. However, such a circuit element to be tested is a transistor, and the temperature dependence of the ON current (the current value of the drain in the ON state) (for example, −40 to 125
(° C.)) and the temperature dependence of the threshold voltage (V _T ). Also in this case, there is no need to arrange a transistor, which is a circuit element to be tested, in a thermostat, and it is not necessary to arrange a separate thermoelectric element near the transistor.

Furthermore, in the above embodiment, the wiring pattern 202, which is a circuit element to be tested, is tested for EM life,
This is exemplified by heating with a Peltier element 250. However, a thermoelectric element such as the Peltier element 250 can freely switch between heating and cooling depending on the direction of conduction. It is also possible to cool the device.

In the above embodiment, the control unit 221 simply controls the heat generation temperature of the Peltier element 210 by the amount of current. However, for example, the heat generation temperature of the Peltier element 210 is measured by temperature measuring means such as a temperature sensor. However, it is also possible for the control unit 221 to perform feedback control of the energization amount in accordance with the measurement result.

Next, an integrated circuit device according to a second embodiment of the present invention will be described below with reference to FIG. FIG. 14 is a vertical sectional side view showing the internal structure of the integrated circuit device. The integrated circuit device 300 of the present embodiment also has the circuit board 101 mounted on the package member 301. The structure of the circuit board 101 is the same as that of the integrated circuit device 100 described above, and the structure of the package member 301 is the same as that of the integrated circuit device 100 described above. This is different from the integrated circuit device 100 described above.

In the package member 301 of the integrated circuit device 300 of the present embodiment, a plurality of lead terminals 303 made of metal are provided around a single package body 302 made of ceramic.
Are arranged, and the circuit board 101 is provided with a Peltier element 310 which is a thermoelectric element at the center of the upper surface of the package body 302.
The Peltier elements 310 are also individually connected to the lead terminals 303 together with the circuit board 101 by bonding wires 109.

More specifically, the package body 302 has a concave upper surface center, and a pair of terminal electrodes 311 and 312 formed in parallel on the bottom surface. An n-type semiconductor 313 and a p-type semiconductor 314 are individually laminated on the upper surfaces of the pair of terminal electrodes 311 and 312, respectively, and one bonding electrode 315 is formed on the upper surfaces of the pair of semiconductors 313 and 314. It is laminated. Thus, a П-shaped Peltier element 310 is formed.
The circuit board 101 is provided on the upper surface of the bonding electrode 315 of FIG.
Are laminated.

Note that a circuit test system (not shown), which is a circuit test apparatus of the present embodiment, includes a plurality of test boards 111 and one control unit 221 similarly to the circuit test system 220 described above. And the thermostat 112 is not provided.

In the configuration described above, the integrated circuit device 300 according to the present embodiment is the same as the integrated circuit device 200 described above.
The EM life of the wiring pattern 104 is tested by the circuit test system in the same manner as described above. In this case, the wiring pattern 104 to be tested is heated together with the circuit board 101 to the test temperature by the Peltier element 310.

Therefore, the integrated circuit device 3 of the present embodiment
Also, the circuit test system for executing the EM life test does not require a large-scale constant temperature bath for heating the integrated circuit device 300 to the test temperature, so that the device scale and power consumption can be reduced as compared with the related art. The EM life test at the test temperature of can be completed in one operation.

In the above-described integrated circuit device 200 of the first embodiment, since only the wiring pattern 202 to be tested is heated by the Peltier element 210, the entire circuit board 101 is heated by the Peltier element 310. Power consumption can be reduced compared to the integrated circuit device 300 of FIG.

On the other hand, in the integrated circuit device 300 of the second embodiment, the structure of the circuit board 101 can be made completely the same as the actual product to improve the accuracy of the EM life test. And package member 301
Can be used repeatedly.

The material of the package body 302 is selected in consideration of various factors such as a test temperature, a coefficient of thermal expansion, durability, workability, and the like. In this case, a test temperature of 200 (° C.) is considered. Then you choose ceramic. In particular, when the wiring pattern 104 to be tested is made of copper, the test temperature is 300 (° C.) or higher, so that the material of the package body 302 is preferably ceramic.

It is of course possible to use the above-described package member 301 of the second embodiment for measuring circuit characteristics such as transistors.

[0108]

The circuit device according to the present invention is provided with a thermoelectric element for setting a circuit element to a test temperature by a thermoelectric effect, so that a thermoelectric element whose temperature changes due to the thermoelectric effect is controlled to a desired temperature by an amount of electricity. Measurement of the circuit characteristics of the circuit element can be performed accurately at an accurate test temperature, and the direction of heat conduction of the thermoelectric element can be switched according to the direction of conduction. It is possible to cool as well as heat the elements,
Since a thermostat is not required for measuring circuit characteristics, the scale and power consumption of the circuit test apparatus can be reduced, and a plurality of thermoelectric elements can be used to set a plurality of circuit elements to different test temperatures. Therefore, the measurement of the circuit characteristics at a plurality of types of test temperatures can be performed simultaneously, and the operation can be performed efficiently and quickly.

In the above-described circuit device, since the thermoelectric element is also formed on the circuit board on which the circuit element to be tested is formed, it is necessary to arrange a separate thermoelectric element near the circuit element. And the circuit element can be set to the test temperature with a simple structure.

The circuit element is located on the upper surface of the circuit board, and the thermoelectric element is located near the circuit element but not above the circuit element. The observation of the circuit element is not hindered by the thermoelectric element.

Further, since the circuit element is located above the junction electrode of the ペ ル -type Peltier element, the 電極 -type Peltier element is configured such that when a predetermined current is applied to a pair of terminal electrodes, the junction electrode becomes a predetermined type. Since the temperature becomes the temperature, the circuit element can be set to the test temperature with a simple structure.

Further, since the heat conducted through the thermoelectric element and the circuit element is diffused and uniformized by the thermal diffusion means, the entire circuit element is uniformly brought to the test temperature. Can be improved.

Since the circuit board and the thermoelectric element are mounted on the package body of the package member, there is no need to dispose a separate thermoelectric element near the circuit board.
The circuit element can be set to the test temperature via the circuit board with a simple structure.

Further, since the circuit element is located above the junction electrode of the П-type Peltier element, the 電極 -type Peltier element is configured such that when a predetermined current is applied to a pair of terminal electrodes, the junction electrode becomes a predetermined type. Since the temperature becomes the temperature, the circuit element can be set to the test temperature via the circuit board with a simple structure.

Further, since the heat conducted through the thermoelectric element and the circuit board is diffused and uniformized by the heat diffusion means, the entire circuit board is uniformly brought to the test temperature, so that the circuit characteristics of the circuit element are not changed. Measurement accuracy can be improved.

The package member according to the present invention is configured such that a thermoelectric element connected to a part of a plurality of lead terminals brings a circuit element to a test temperature by a thermoelectric effect via a circuit board, thereby forming a separate component near the circuit board. It is not necessary to dispose the thermoelectric element, and the circuit element can be set to the test temperature via the circuit board with a simple structure.

In the package member as described above, the circuit board is mounted above the junction electrode of the П-shaped Peltier element, so that the circuit element can be set to the test temperature via the circuit board with a simple structure. Can be.

Further, since the heat conducted between the thermoelectric element and the circuit board is diffused and uniformized by the heat diffusing means, the entire circuit board is uniformly brought to the test temperature. Measurement accuracy can be improved.

According to the circuit manufacturing method of the present invention, the thermoelectric element whose test temperature is set by the thermoelectric effect is also formed on the circuit board, so that the thermoelectric element can be formed together with the circuit element on the circuit board of the circuit device. When measuring the circuit characteristics of the circuit device, the circuit element can be set to a predetermined test temperature by the thermoelectric effect of the thermoelectric element.

In the first circuit test method of the present invention, when measuring the circuit characteristics of the circuit elements of the circuit device of the present invention, a predetermined current is applied to the thermoelectric element. Because the circuit element is set to the test temperature by the thermoelectric effect, a thermostat is not required for measuring the circuit characteristics of the circuit element, and the scale and power consumption of the circuit test apparatus can be reduced.

According to the second circuit test method of the present invention, when a test current is applied to the wiring pattern of the circuit device of the present invention, a predetermined current is applied to the thermoelectric element as well, so that the Since the wiring pattern is set to the test temperature due to the thermoelectric effect of the element, a thermostat is not required for measuring the EM life time of the wiring pattern, and the circuit scale and power consumption of the circuit test apparatus can be reduced.

According to the third circuit test method of the present invention, when measuring the circuit characteristics of the circuit element of the circuit device of the present invention, a predetermined current is applied to the thermoelectric element of the package member. Since the temperature of the circuit element is set to the test temperature by the thermoelectric effect of the element, a thermostat is not required for measuring the circuit characteristics of the circuit element, and the scale and power consumption of the circuit test apparatus can be reduced.

According to the fourth circuit test method of the present invention, when a test current is applied to the wiring pattern of the circuit device of the present invention,
When a predetermined current is applied to the thermoelectric element of the package member, the wiring pattern is set to the test temperature by the thermoelectric effect of the thermoelectric element due to the energization.
A constant temperature bath is not required for measuring the M life time, so that the device scale and power consumption of the circuit test device can be reduced.

In the circuit test method using the first circuit test apparatus of the present invention, when the characteristic measuring means measures the circuit characteristics of the circuit elements of the circuit apparatus of the present invention, the element energizing means applies a predetermined amount to the thermoelectric element on the circuit board. When a current is applied, the circuit element is set to a test temperature by the thermoelectric effect of the thermoelectric element due to the application of the current. Therefore, a thermostat is not required for measuring the circuit characteristics of the circuit element. And can be reduced.

According to the circuit test method using the second circuit test apparatus of the present invention, the circuit board of the circuit device to be tested is mounted on the package member of the present invention, and the circuit elements of the circuit board mounted on the package member are mounted. When the characteristic is measured by the characteristic measuring means, the element conducting means supplies a predetermined current to the thermoelectric element on the circuit board, so that the circuit element is brought to the test temperature by the thermoelectric effect of the thermoelectric element caused by the conduction. A thermostat is not required to measure the circuit characteristics of the element,
The device scale and power consumption of the circuit test device can be reduced.

In the circuit test method using the third circuit test apparatus of the present invention, when the element energizing means applies a current to the wiring pattern of the circuit apparatus of the present invention and the resistance measuring means measures the electric resistance of the wiring pattern, Since the element energizing means applies a unique current to the thermoelectric element of the circuit board, the wiring pattern is set to the test temperature by the thermoelectric effect of the thermoelectric element due to the energization. Is not required, and the device scale and power consumption of the circuit test device can be reduced.

In the circuit test method using the fourth circuit test apparatus of the present invention, the circuit board of the circuit device to be tested is mounted on the package member of the present invention, and the element is included in the wiring pattern of the circuit board mounted on the package member. When the current supply means supplies a current and the resistance measuring means measures the electric resistance of the wiring pattern, the element supply means supplies a unique current also to the thermoelectric element on the circuit board. Since the temperature of the wiring pattern is set to the test temperature, a thermostat is not required for measuring the EM life time of the wiring pattern, and the device scale and power consumption of the circuit test device can be reduced. .

[Brief description of the drawings]

FIG. 1 is a plan view showing a structure of a wiring pattern as a circuit element and a Peltier element as a thermoelectric element of a circuit device according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a schematic diagram showing the overall structure of the circuit test device according to the present embodiment.

FIG. 4 is a process diagram showing a first half of a circuit manufacturing method for manufacturing the circuit device of the present embodiment.

FIG. 5 is a process chart showing a latter half part.

FIG. 6 is a flowchart illustrating a circuit test method for measuring circuit characteristics of the circuit device according to the present embodiment.

FIG. 7 is a plan view showing a structure of a wiring pattern, a Peltier element, and the like of a circuit device according to a first modification.

FIG. 8 is a sectional view taken along the line BB of FIG. 7;

FIG. 9 is a plan view illustrating a structure of a wiring pattern, a Peltier element, and the like of a circuit device according to a second modification.

FIG. 10 is a sectional view taken along the line CC in FIG. 9;

FIG. 11 is a process diagram showing a main part of a circuit manufacturing method of a circuit device according to a third modification.

FIG. 12 is a plan view illustrating a structure of a wiring pattern, a Peltier element, and the like of a circuit device according to a fourth modification.

FIG. 13 is a sectional view taken along line DD of FIG.

FIG. 14 is a plan view showing a structure of a wiring pattern as a circuit element and a Peltier element as a thermoelectric element of a circuit device according to a second embodiment of the present invention.

FIG. 15 is a vertical sectional side view showing a circuit device.

FIG. 16 is a plan view showing the outer shape of a wiring pattern as a circuit element.

FIG. 17 is a circuit diagram showing an equivalent circuit of a wiring pattern.

FIG. 18 is a schematic diagram showing the overall structure of a circuit test system that is a circuit test device.

FIG. 19 is a flowchart showing a main routine of a circuit test method by the circuit test system.

FIG. 20 is a flowchart showing a subroutine.

[Explanation of symbols]

101, 201 Circuit board 102, 301 Package member 104, 202 Wiring pattern 107, 302 Package body 108, 303 Lead terminal 111 Test board 200, 300 Integrated circuit device 210, 230, 250, 310 Peltier as thermoelectric element Element 211, 212, 233, 234, 311, 312
Terminal electrode 213, 231, 313 n-type semiconductor 214, 232, 314 p-type semiconductor 215, 315 junction electrode 216, 240, 316 heat diffusion plate as a heat diffusion unit 220 circuit test system as a circuit test device 221 functions as various units Control unit

Claims (21)

[Claims] 1. A circuit device to be tested in which circuit characteristics of a circuit element are electrically measured at a predetermined test temperature, comprising: a thermoelectric element for setting the circuit element to the test temperature by a thermoelectric effect. Circuit device. 2. The circuit device according to claim 1, wherein said thermoelectric element and said circuit element are formed on the same circuit board. 3. The circuit device according to claim 2, wherein the circuit element is formed on an upper surface of the circuit board, and the thermoelectric element is arranged at a position other than above the circuit element. 4. The thermoelectric element comprises a Peltier element in which both ends of one junction electrode and a pair of terminal electrodes are connected in a П shape through an n-type semiconductor and a p-type semiconductor individually. The circuit device according to claim 3, wherein the circuit device is located above a bonding electrode of the thermoelectric element. 5. The circuit device according to claim 2, further comprising a heat diffusion means for diffusing heat into a gap between the circuit element and the thermoelectric element to make the heat uniform. 6. A package member comprising a package body and a plurality of lead terminals, wherein the circuit element is formed on a circuit board separate from the thermoelectric element. The circuit device according to claim 1, wherein an element is mounted on a package body of the package member, and the thermoelectric element and the circuit element are individually connected to the plurality of lead terminals. 7. The circuit board according to claim 1, wherein the thermoelectric element comprises a Peltier element in which both ends of one bonding electrode and a pair of terminal electrodes are connected in a П shape through an n-type semiconductor and a p-type semiconductor individually. The circuit device according to claim 6, wherein the circuit device is disposed above a bonding electrode of the thermoelectric element. 8. The circuit device according to claim 6, further comprising a heat diffusing means for diffusing heat into a gap between the circuit board and the thermoelectric element to make the heat uniform. 9. The circuit element has an EM (Electro-Migra) circuit characteristic based on a change in electric resistance when a test current is applied.
The circuit device according to any one of claims 1 to 8, wherein the circuit device comprises a wiring pattern whose life time is measured. 10. A package member on which a circuit board on which circuit characteristics of circuit elements of a circuit device to be tested is electrically measured at a predetermined test temperature is mounted, and a package body on which the circuit board is mounted is provided. A plurality of lead terminals to which circuit elements of the circuit board are partially connected; and the test temperature is connected to a part of the plurality of lead terminals, and the circuit element is connected to the test temperature by a thermoelectric effect through the circuit board. And a thermoelectric element. 11. The thermoelectric element comprises a Peltier element in which both ends of a single junction electrode and a pair of terminal electrodes are connected in a П shape through an n-type semiconductor and a p-type semiconductor individually. The package member according to claim 10, wherein the package member is mounted below a position where the circuit board is arranged. 12. The package member according to claim 10, further comprising a heat diffusing means for diffusing heat to a uniform space between the thermoelectric element and a position where the circuit board is arranged. 13. A circuit manufacturing method for manufacturing a circuit device to be tested in which circuit characteristics of circuit elements formed on a circuit board are electrically measured at a predetermined test temperature, wherein the circuit element has a thermoelectric effect. A circuit manufacturing method in which a thermoelectric element having the test temperature is also formed on the circuit board. 14. A circuit test method for electrically measuring a circuit characteristic by setting a circuit element of a circuit device to be tested to a predetermined test temperature, wherein the circuit device according to claim 1. A circuit test method for measuring a circuit characteristic of the circuit element while passing a predetermined current through the thermoelectric element. 15. A wiring pattern formed as a circuit element on a circuit board of a circuit device to be tested is set at a predetermined test temperature and a predetermined test current is applied, and the EM life is determined as a circuit characteristic of the wiring pattern. A circuit test method for testing by a change in resistance, wherein the test current is applied to the wiring pattern of the circuit device according to claim 9 and a unique current is applied to the thermoelectric element. 16. A circuit test method for electrically measuring circuit characteristics by setting a circuit element of a circuit device to be tested to a predetermined test temperature, wherein the package member according to claim 10. Mounting the circuit board on the package body of the above, connecting the circuit elements of the circuit board to the lead terminals of the package member, and applying a predetermined current to the thermoelectric element from the lead terminals of the package member. A circuit test method for measuring circuit characteristics. 17. A wiring pattern formed as a circuit element on a circuit board of a circuit device to be tested is set at a predetermined test temperature and a predetermined test current is applied, and an EM life is determined as a circuit characteristic of the wiring pattern. A circuit test method for testing by a change in resistance, wherein the circuit board is mounted on a package main body of the package member according to any one of claims 10 to 12, and a wiring pattern of the circuit board is attached to the package member. A circuit test method comprising: connecting a lead current to a lead terminal of the package member; supplying a test current to the wiring pattern of the circuit board from the lead terminal of the package member; and supplying a unique current to the thermoelectric element. 18. A circuit test apparatus for electrically measuring a circuit characteristic by setting a circuit element formed on a circuit board of a circuit device to be tested to a predetermined test temperature, wherein: A circuit tester, comprising: an element energizing unit that applies a predetermined current to a thermoelectric element of the circuit device according to claim 1; and a characteristic measuring unit that measures a circuit characteristic of the circuit element. 19. A circuit test apparatus for electrically measuring circuit characteristics by setting a circuit element formed on a circuit board of a circuit device to be tested to a predetermined test temperature, wherein the circuit board is mounted. Item 13. A package member according to any one of Items 10 to 12, element energizing means for applying a predetermined current to a thermoelectric element of the package member, and characteristic measuring means for measuring circuit characteristics of circuit elements of the circuit board. A circuit testing apparatus comprising: 20. A wiring pattern formed as a circuit element on a circuit board of a circuit device to be tested is set to a predetermined test temperature and a predetermined test current is applied, and an EM life is determined as a circuit characteristic of the wiring pattern. A circuit tester for testing by a change in resistance, a resistance measuring unit for measuring an electric resistance of a wiring pattern of the circuit device according to claim 9, an element energizing unit for applying the test current to the wiring pattern, A circuit testing device, comprising: an element energizing means for applying a unique current to the thermoelectric element of the circuit board. 21. A wiring pattern formed as a circuit element on a circuit board of a circuit device to be tested is set to a predetermined test temperature and a predetermined test current is applied, and an EM life is determined as a circuit characteristic of the wiring pattern. It is a circuit test apparatus which tests by change of resistance, Comprising: The package member as described in any one of Claims 10 thru | or 12, and the wiring pattern of the said circuit board mounted in this package member Resistance measuring means for measuring the electric resistance of the element, element energizing means for applying the test current to the wiring pattern of the circuit board, and element energizing means for applying a current unique to the thermoelectric element of the package member. Circuit testing equipment.