JP2001230498A - Ｉｉｉ族窒化物系化合物半導体レーザ - Google Patents

Ｉｉｉ族窒化物系化合物半導体レーザ

Info

Publication number
JP2001230498A
JP2001230498A JP2000038279A JP2000038279A JP2001230498A JP 2001230498 A JP2001230498 A JP 2001230498A JP 2000038279 A JP2000038279 A JP 2000038279A JP 2000038279 A JP2000038279 A JP 2000038279A JP 2001230498 A JP2001230498 A JP 2001230498A
Authority
JP
Japan
Prior art keywords
semiconductor laser
group iii
iii nitride
compound semiconductor
positive electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000038279A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001230498A5 (https=
Inventor
Seiji Nagai
誠二 永井
Masaru Ito
優 伊藤
Mitsuo Wakiguchi
光雄 湧口
Masayoshi Koike
正好 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2000038279A priority Critical patent/JP2001230498A/ja
Publication of JP2001230498A publication Critical patent/JP2001230498A/ja
Publication of JP2001230498A5 publication Critical patent/JP2001230498A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2000038279A 2000-02-16 2000-02-16 Ｉｉｉ族窒化物系化合物半導体レーザ Withdrawn JP2001230498A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000038279A JP2001230498A (ja) 2000-02-16 2000-02-16 Ｉｉｉ族窒化物系化合物半導体レーザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000038279A JP2001230498A (ja) 2000-02-16 2000-02-16 Ｉｉｉ族窒化物系化合物半導体レーザ

Publications (2)

Publication Number Publication Date
JP2001230498A true JP2001230498A (ja) 2001-08-24
JP2001230498A5 JP2001230498A5 (https=) 2006-11-30

Family

ID=18562041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000038279A Withdrawn JP2001230498A (ja) 2000-02-16 2000-02-16 Ｉｉｉ族窒化物系化合物半導体レーザ

Country Status (1)

Country Link
JP (1) JP2001230498A (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005091454A1 (ja) * 2004-03-18 2005-09-29 Sanyo Electric Co., Ltd. 半導体レーザ素子及びその製造方法
JP2006054329A (ja) * 2004-08-12 2006-02-23 Seiko Epson Corp 光源装置、プロジェクタ
KR100755279B1 (ko) 2005-10-11 2007-09-04 (주)더리즈 발광다이오드의 마운트 구조 및 그 제조방법
JP2008091916A (ja) * 2006-09-29 2008-04-17 Osram Opto Semiconductors Gmbh 半導体レーザーおよび半導体レーザーの製造方法
CN100395897C (zh) * 2003-08-08 2008-06-18 厦门三安电子有限公司 一种氮化物器件倒装的方法
US7795053B2 (en) 2004-03-24 2010-09-14 Hitachi Cable Precision Co., Ltd Light-emitting device manufacturing method and light-emitting device
JP2011165799A (ja) * 2010-02-08 2011-08-25 Showa Denko Kk フリップチップ型発光ダイオード及びその製造方法、並びに発光ダイオードランプ
KR101326179B1 (ko) * 2012-02-21 2013-11-07 주식회사 세미콘라이트 반도체 발광소자
CN107731979A (zh) * 2017-10-24 2018-02-23 江门市奥伦德光电有限公司 一种正装结构的led芯片及其制作方法
JP2018164069A (ja) * 2017-03-27 2018-10-18 ウシオオプトセミコンダクター株式会社 半導体レーザ装置
CN113471062A (zh) * 2021-06-30 2021-10-01 中国科学技术大学 Iii族氧化物薄膜制备方法及其外延片

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100395897C (zh) * 2003-08-08 2008-06-18 厦门三安电子有限公司 一种氮化物器件倒装的方法
US7843983B2 (en) 2004-03-18 2010-11-30 Sanyo Electric Co., Ltd. Semiconductor laser element and manufacturing method thereof
WO2005091454A1 (ja) * 2004-03-18 2005-09-29 Sanyo Electric Co., Ltd. 半導体レーザ素子及びその製造方法
US7795053B2 (en) 2004-03-24 2010-09-14 Hitachi Cable Precision Co., Ltd Light-emitting device manufacturing method and light-emitting device
JP2006054329A (ja) * 2004-08-12 2006-02-23 Seiko Epson Corp 光源装置、プロジェクタ
KR100755279B1 (ko) 2005-10-11 2007-09-04 (주)더리즈 발광다이오드의 마운트 구조 및 그 제조방법
JP2008091916A (ja) * 2006-09-29 2008-04-17 Osram Opto Semiconductors Gmbh 半導体レーザーおよび半導体レーザーの製造方法
JP2011165799A (ja) * 2010-02-08 2011-08-25 Showa Denko Kk フリップチップ型発光ダイオード及びその製造方法、並びに発光ダイオードランプ
KR101326179B1 (ko) * 2012-02-21 2013-11-07 주식회사 세미콘라이트 반도체 발광소자
JP2018164069A (ja) * 2017-03-27 2018-10-18 ウシオオプトセミコンダクター株式会社 半導体レーザ装置
JP7035377B2 (ja) 2017-03-27 2022-03-15 ウシオ電機株式会社 半導体レーザ装置
CN107731979A (zh) * 2017-10-24 2018-02-23 江门市奥伦德光电有限公司 一种正装结构的led芯片及其制作方法
CN113471062A (zh) * 2021-06-30 2021-10-01 中国科学技术大学 Iii族氧化物薄膜制备方法及其外延片

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