JP2001230076A - Inspection method and device for organic el element barrier rib - Google Patents
Inspection method and device for organic el element barrier ribInfo
- Publication number
- JP2001230076A JP2001230076A JP2000038706A JP2000038706A JP2001230076A JP 2001230076 A JP2001230076 A JP 2001230076A JP 2000038706 A JP2000038706 A JP 2000038706A JP 2000038706 A JP2000038706 A JP 2000038706A JP 2001230076 A JP2001230076 A JP 2001230076A
- Authority
- JP
- Japan
- Prior art keywords
- partition
- substrate
- organic
- side electrode
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007689 inspection Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 52
- 230000004888 barrier function Effects 0.000 title abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 51
- 238000005192 partition Methods 0.000 claims description 101
- 239000000523 sample Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 30
- 238000012360 testing method Methods 0.000 claims description 23
- 238000007740 vapor deposition Methods 0.000 claims description 10
- 230000007547 defect Effects 0.000 abstract description 13
- 239000010408 film Substances 0.000 description 104
- 230000002950 deficient Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- -1 CuI Chemical class 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000006081 fluorescent whitening agent Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/18—Tiled displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/70—Testing, e.g. accelerated lifetime tests
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は有機EL(エレクト
ロルミネセンス)素子用隔壁の検査方法に関する。更に
詳しくは、本発明は複数の有機EL膜を隔壁にて仕切る
有機EL素子の該隔壁の検査方法であって、隔壁を作製
した時点で、この隔壁の形成の良否を短時間で容易に検
査することができる有機EL素子用隔壁の検査方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of inspecting a partition for an organic EL (electroluminescence) element. More specifically, the present invention relates to a method for inspecting a partition of an organic EL element in which a plurality of organic EL films are partitioned by the partition, and at the time of forming the partition, the quality of formation of the partition is easily inspected in a short time. The present invention relates to a method of inspecting a partition for an organic EL element which can be performed.
【0002】[0002]
【従来の技術】ドットマトリクス型やセグメント型等の
有機EL表示装置に用いられる有機EL素子は、複数の
表示単位を備え、この表示単位毎に分割された有機EL
膜を備える。また、有機EL膜を表示単位毎に分割する
構成は様々考えられるが、その一つに隔壁によって仕切
る構成がある(例えば、特開平8−315981号公
報)。2. Description of the Related Art An organic EL element used in a dot matrix type or a segment type organic EL display device has a plurality of display units, and the organic EL element is divided for each display unit.
With a membrane. There are various configurations in which the organic EL film is divided for each display unit. One of them is a configuration in which the organic EL film is partitioned by partition walls (for example, JP-A-8-315981).
【0003】この隔壁を用いた有機EL素子は、基板上
に隔壁を形成した後に有機EL膜を蒸着形成するため、
図13に示すように、基板21上に、基板側電極22、
有機EL膜23及び背面側電極24を備える有機EL積
層膜が形成される他、隔壁25上にも機能しない有機E
L膜23a及び背面側電極24aが形成される。通常、
これらの膜は隔壁25によって高低差が生じ、互いに分
離されて接触しない。しかし、図14に示すように、隔
壁25に欠損等の不良部位Bが生じ、隣接する基板21
上並びに隔壁25上の背面側電極24同士が接触し、正
常な表示ができなくなる不良素子2が作製されることが
ある。In an organic EL device using this partition, an organic EL film is formed by vapor deposition after forming a partition on a substrate.
As shown in FIG. 13, a substrate-side electrode 22,
An organic EL laminated film including an organic EL film 23 and a back side electrode 24 is formed, and an organic
The L film 23a and the back side electrode 24a are formed. Normal,
These films have a height difference due to the partition walls 25, and are separated from each other and do not contact with each other. However, as shown in FIG.
The defective element 2 in which normal display cannot be performed due to contact between the upper electrodes and the rear electrodes 24 on the partition walls 25 may be produced.
【0004】このような不良素子を有機EL素子の製造
時に見つけ出すため、図2に示すように隔壁25を形成
した後にSEM等を用いて観察を行うことで、隔壁25
の形状を確認することが行われている。また、有機EL
膜23及び背面側電極24を形成した有機EL素子2の
発光試験を行う検査方法も行われている。[0004] In order to find such a defective element at the time of manufacturing an organic EL element, the partition 25 is formed by forming a partition 25 as shown in FIG.
Checking the shape has been performed. Also, organic EL
An inspection method for performing a light emission test of the organic EL element 2 on which the film 23 and the back electrode 24 are formed is also performed.
【0005】[0005]
【発明が解決しようとする課題】しかし、SEM等を用
いた検査方法は、時間と手間がかかる上、観察できる部
位が限られるため、量産時の検査方法としては不適切で
あった。また、発光試験による方法は不良素子を容易に
発見することができるが、途中に有機EL膜23及び背
面側電極24の形成工程が含まれるため、これらの作業
が無駄となってしまっていた。更に、継続した不良とな
る場合は、通常の量産時には不良素子が発見された時点
で隔壁の形成工程からこの検査工程の間に渡り、不良素
子が各工程に多数生じることとなった。However, an inspection method using an SEM or the like is time-consuming and troublesome, and has a limited number of observable parts, and is therefore unsuitable as an inspection method for mass production. In addition, a method using a light emission test can easily find a defective element, but these steps are wasted because a process of forming the organic EL film 23 and the back electrode 24 is included in the middle. Furthermore, in the case of continued failure, a large number of defective elements are generated in each step from the step of forming the partition wall to the inspection step at the time when the defective element is found during normal mass production.
【0006】本発明は、このような問題点を解決するも
のであり、基板上に隔壁を形成した時点で隔壁の良否の
検査ができ、検査自体も短時間で行うことができる有機
EL表示装置用隔壁の検査方法及び検査装置を提供する
ことを目的とする。The present invention has been made to solve the above-mentioned problems. An organic EL display device capable of inspecting the quality of a partition when a partition is formed on a substrate and performing the inspection itself in a short time. It is an object of the present invention to provide an inspection method and an inspection device for a partition wall.
【0007】[0007]
【課題を解決するための手段】本第1発明の有機EL素
子用隔壁の検査方法は、基板側電極及び隔壁が形成され
た基板を備える作製中素子の該基板上に、有機EL膜及
び背面側電極が形成されてなる有機EL素子における該
隔壁の検査方法であって、該作製中素子上に導電膜を形
成し、該隔壁に隔てられた隣同士の該導電膜間の導通の
有無又は程度によって該隔壁の良否を判断することを特
徴とする。According to a first aspect of the present invention, there is provided a method of inspecting a partition for an organic EL element, comprising: a substrate on which an electrode and a partition are formed; A method for inspecting a partition in an organic EL element in which a side electrode is formed, wherein a conductive film is formed on the element during the manufacturing, and whether or not there is conduction between adjacent conductive films separated by the partition or The quality of the partition is determined based on the degree.
【0008】上記「有機EL表示装置」は、基板上に、
基板側電極と、隔壁によって仕切られる複数の有機EL
膜及び背面側電極とが、順次積層されてなる有機EL素
子を備える。上記「基板」としては、有機EL膜を形成
することができる材質であればよく、任意に選択するこ
とができる。また、透明であるかについても特に問わな
い。The above-mentioned “organic EL display device” is provided on a substrate,
A plurality of organic ELs separated by substrate-side electrodes and partition walls
The organic EL device includes a film and a rear electrode that are sequentially stacked. The “substrate” may be any material that can form an organic EL film, and may be arbitrarily selected. Also, there is no particular limitation on whether the material is transparent.
【0009】上記「有機EL膜」は、基板側電極及び背
面側電極から供給される正孔及び電子を再結合させるこ
とで発光する部位である。この有機EL膜は、少なくと
も有機蛍光性物質を具備する発光層を備える。また、発
光層に加えて正孔注入層、正孔輸送層、電子輸送層及び
電子注入層のうち少なくとも一層を備えることもでき
る。更に、各層を構成する材料としては、それぞれ種々
の公知材料を用いることができる。これらの各層を形成
する方法は、真空蒸着法、スピンコート法、キャスト
法、スパッタリング法、LB法等の方法を例示すること
ができる。The “organic EL film” is a portion that emits light by recombining holes and electrons supplied from the substrate side electrode and the back side electrode. The organic EL film includes a light emitting layer including at least an organic fluorescent substance. In addition, at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer can be provided in addition to the light emitting layer. Further, various known materials can be used as a material constituting each layer. As a method of forming each of these layers, a method such as a vacuum evaporation method, a spin coating method, a casting method, a sputtering method, and an LB method can be exemplified.
【0010】有機EL膜を構成する発光層は、ベンゾチ
アゾール系、ベンゾイミダゾール系等の蛍光増白剤、及
び金属キレート化オキシノイド化合物、スチリルベンゼ
ン系化合物等の金属錯体等により形成することができ
る。また、正孔輸送層はトリフェニルアミン誘導体等に
より、電子輸送層はアルミキノリウム錯体等により形成
することができる。更に、正孔注入層は銅フタロシアニ
ン錯体等により、電子注入層はアルカリ金属のフッ化物
又は酸化物等により形成することができる。The light emitting layer constituting the organic EL film can be formed of a benzothiazole-based or benzimidazole-based fluorescent whitening agent, a metal chelated oxinoid compound, a metal complex such as a styrylbenzene-based compound, or the like. Further, the hole transport layer can be formed of a triphenylamine derivative or the like, and the electron transport layer can be formed of an aluminum quinolium complex or the like. Further, the hole injection layer can be formed of a copper phthalocyanine complex or the like, and the electron injection layer can be formed of an alkali metal fluoride or oxide.
【0011】上記「基板側電極」及び上記「背面側電
極」についても、それぞれ種々の材質により形成するこ
とができる。基板側電極及び/又は背面側電極に透明性
を要する場合は、Au、Ni等の金属単体、及びITO
(Indium Tin Oxide)、CuI、SnO2、ZnO等の
金属化合物等を用いることができる。このうち、生産
性、安定した導電性等の観点からITOを用いて形成す
ることが特に好ましい。電極に透明性を要しない場合
は、上記材質に加え、Al、Au、Ag、Mg、Cu等
の金属の他、Mg−Ag等の合金や、Mg及びAgの混
合物等によって形成することができる。The “substrate-side electrode” and the “back-side electrode” can also be formed of various materials. When transparency is required for the substrate side electrode and / or the back side electrode, a simple metal such as Au, Ni, etc., and ITO
(Indium Tin Oxide), metal compounds such as CuI, SnO 2 , and ZnO can be used. Among them, it is particularly preferable to use ITO from the viewpoints of productivity, stable conductivity and the like. When the electrode does not require transparency, in addition to the above materials, it can be formed of metal such as Al, Au, Ag, Mg, Cu, an alloy such as Mg-Ag, or a mixture of Mg and Ag. .
【0012】上記「導電膜」は、真空蒸着、イオンプレ
ーティング及びスパッタリング等の任意の物理的蒸着方
法で形成することができるが、真空蒸着等により金属薄
膜(合金の薄膜を含む)を形成されるのが好ましい。ま
た、導電膜の材料は、Al、Au、Ag、Mg及びCu
等の金属や、これらの合金並びに混合物等を例示するこ
とができる。尚、導電膜材料は低温で蒸着できるものが
より望ましい。The above “conductive film” can be formed by any physical vapor deposition method such as vacuum vapor deposition, ion plating, and sputtering. However, a metal thin film (including an alloy thin film) is formed by vacuum vapor deposition or the like. Preferably. The materials of the conductive film are Al, Au, Ag, Mg, and Cu.
And alloys and mixtures thereof. It is more desirable that the conductive film material be capable of being deposited at a low temperature.
【0013】本検査方法は、セグメント形式、マトリク
ス形等の任意の駆動形式の有機EL素子に対して用いる
ことができるが、複数の上記基板側電極及び上記背面側
電極を互いに交差するように配設したドットマトリクス
型素子に対して好適に用いることができる。The present inspection method can be used for an organic EL element of any drive type such as a segment type and a matrix type. However, a plurality of the substrate side electrodes and the rear side electrodes are arranged so as to cross each other. It can be suitably used for the provided dot matrix type element.
【0014】また、第2発明に示すように、上記基板側
電極は帯状であって且つ上記基板上に並列配設され、上
記隔壁は帯状であって且つ該基板側電極と直交するよう
に並列配設され、上記導電膜は帯状であって且つ各該隔
壁間に並列配列され、該導電膜間の導通を試験する導通
試験装置のプローブピンを上記各背面側電極の端子に接
続することができる。Further, as shown in the second invention, the substrate-side electrodes are band-shaped and are arranged in parallel on the substrate, and the partition walls are band-shaped and are arranged in parallel with each other so as to be orthogonal to the substrate-side electrodes. The conductive film is disposed in a strip shape and is arranged in parallel between the partition walls, and a probe pin of a continuity test device for testing continuity between the conductive films may be connected to the terminals of the back electrodes. it can.
【0015】更に、第3発明に示すように、上記基板側
電極は帯状であって且つ上記基板上に並列配設され、上
記隔壁は帯状部位が該基板側電極と直交するように並列
配設されるとともに、その端部を互いに接続した蛇行形
状であり、上記導電膜は歯状部位が各該隔壁間に並列配
列されることで互いに噛み合った1組の櫛歯形状であっ
て、該導電膜間の導通を試験する導通試験装置のプロー
ブピンを該導電膜に接続することができる。Further, as shown in the third invention, the substrate-side electrodes are strip-shaped and are arranged in parallel on the substrate, and the partition walls are arranged in parallel so that the strip-shaped portions are orthogonal to the substrate-side electrodes. The conductive film has a meandering shape in which its ends are connected to each other, and the conductive film has a set of comb-teeth shapes in which teeth are arranged in parallel between the partition walls so as to mesh with each other. A probe pin of a continuity test device for testing continuity between the films can be connected to the conductive film.
【0016】上記「作製中素子上に導電膜を形成する」
とは、例えば図3に示すように、作製中素子の基板21
上に形成された隔壁25や、基板21及び基板側電極2
2の露出層の上面に導電膜26を形成することを表わ
す。The above-mentioned “Forming a conductive film on the element during fabrication”
Refers to, for example, as shown in FIG.
The partition wall 25 formed thereon, the substrate 21 and the substrate-side electrode 2
2 shows that the conductive film 26 is formed on the upper surface of the second exposed layer.
【0017】本第4発明の有機EL素子用隔壁の検査装
置は、基板側電極及び隔壁が形成された基板を備える作
製中素子上に導電膜を形成する蒸着装置と、該隔壁に隔
てられた隣同士の該導電膜間の導通を試験する導通試験
装置とを備え、上記導通試験装置は、該隔壁に隔てられ
た隣同士の該導電膜間にそれぞれ接続される少なくとも
一組のプローブピンと、各該プローブピンに接続される
該導通試験器とを具備することを特徴とする。The fourth aspect of the present invention is directed to an apparatus for inspecting a partition for an organic EL element, comprising a vapor deposition apparatus for forming a conductive film on an element during fabrication provided with a substrate on which a substrate-side electrode and a partition are formed, and the partition. A continuity test device for testing continuity between adjacent conductive films, wherein the continuity test device includes at least one set of probe pins respectively connected between the adjacent conductive films separated by the partition, And a continuity tester connected to each of the probe pins.
【0018】上記蒸着装置及び導通試験装置は、互いに
独立してもよいし、一体となっていてもよい。また、第
5発明に示すように、上記プローブピンは、上記真空槽
内に配設され、上記各該導電膜に接続される構成とする
ことができる。The vapor deposition device and the continuity test device may be independent of each other or may be integrated. Further, as shown in the fifth invention, the probe pin may be arranged in the vacuum chamber and connected to each of the conductive films.
【0019】[0019]
【発明の実施の形態】以下、図1〜図14を用いて本発
明の有機EL素子用隔壁の検査方法を実施例により説明
する。 〔実施例1〕本実施例1の有機EL素子用隔壁の検査方
法は、隔壁を作製した作製中有機EL素子に、背面側電
極と同様な方法で導電膜を形成し、隔壁によって仕切ら
れる導電膜間の短絡を検査する方法である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an inspection method of a barrier for an organic EL device according to the present invention will be described with reference to FIGS. Example 1 In the method of inspecting a partition for an organic EL element of Example 1, a conductive film is formed on an organic EL element during fabrication in which a partition is manufactured in the same manner as the rear electrode, and the conductive layer is partitioned by the partition. This is a method for inspecting short circuits between films.
【0020】(1)検査装置の構成 本検査方法に用いる検査装置1aを図1に示す。この検
査装置1aは、図1に示すように、真空槽11、固定部
材12、るつぼ13、ヒータ14、パターンマスク1
5、周縁マスク16、プローブピン17及び導通試験器
18とを備える。また、真空槽11、固定部材12、る
つぼ13、ヒータ14、パターンマスク15及び周縁マ
スク16は「蒸着装置」に該当する。更に、プローブピ
ン17及び導通試験器18は「導通試験装置」に該当す
る。(1) Configuration of Inspection Apparatus FIG. 1 shows an inspection apparatus 1a used in the present inspection method. As shown in FIG. 1, the inspection apparatus 1a includes a vacuum chamber 11, a fixing member 12, a crucible 13, a heater 14, a pattern mask 1
5, a peripheral mask 16, a probe pin 17, and a continuity tester 18. Further, the vacuum chamber 11, the fixing member 12, the crucible 13, the heater 14, the pattern mask 15, and the peripheral mask 16 correspond to an “evaporation apparatus”. Further, the probe pin 17 and the continuity tester 18 correspond to a “continuity test device”.
【0021】真空槽11は、真空ポンプ等に接続され
(図示せず)、真空蒸着に必要な雰囲気を形成すること
ができる。また、真空槽11の大きさは、一つ分の有機
EL素子となる作製中素子2bが収容できる大きさであ
る。これは真空槽11の容積を減らし、減圧完了までの
時間をより短くするためである。固定部材12は、真空
槽11内に設けられ、検査対象の作製中素子2bを真空
蒸着ができる位置に固定したり、背面側電極端子241
をプローブピン17に接触させるように固定する。The vacuum chamber 11 is connected to a vacuum pump or the like (not shown), and can form an atmosphere necessary for vacuum deposition. Further, the size of the vacuum chamber 11 is a size that can accommodate the element 2b being manufactured, which is one organic EL element. This is for reducing the volume of the vacuum chamber 11 and shortening the time until the completion of the pressure reduction. The fixing member 12 is provided in the vacuum chamber 11, and fixes the element 2 b to be inspected at a position where vacuum deposition can be performed on the element 2 b to be inspected.
Is fixed so as to contact the probe pin 17.
【0022】るつぼ13は、導電膜26の蒸着材料を入
れて蒸発させるためのものであり、基板21の有機EL
膜23を形成する面に向けられて真空槽11内に配設さ
れている。また、るつぼ13と基板21との距離は、通
常の有機EL膜や背面側電極等を形成する場合の距離と
略同じとなっている。ヒータ14はるつぼ13を加熱
し、るつぼ13内の蒸発材料を蒸発させるためのもので
あり、るつぼ13の周囲に設けられている。パターンマ
スク15は図3に示すような、導電膜26の矩形パター
ンを形成するためのマスクであり、有機EL膜23を形
成する面に密着するように設けられている。周縁マスク
16は、基板21の周縁、及びプローブピン17に導電
膜が蒸着されないように、基板21の周縁を覆うように
設けられている。The crucible 13 is for introducing and evaporating the vapor deposition material of the conductive film 26, and the organic EL of the substrate 21.
It is disposed in the vacuum chamber 11 so as to face the surface on which the film 23 is formed. Further, the distance between the crucible 13 and the substrate 21 is substantially the same as the distance when a normal organic EL film, a back side electrode, and the like are formed. The heater 14 is for heating the crucible 13 and evaporating the evaporation material in the crucible 13, and is provided around the crucible 13. The pattern mask 15 is a mask for forming a rectangular pattern of the conductive film 26 as shown in FIG. 3, and is provided so as to be in close contact with the surface on which the organic EL film 23 is formed. The peripheral mask 16 is provided so as to cover the peripheral edge of the substrate 21 and the peripheral edge of the substrate 21 so that the conductive film is not deposited on the probe pins 17.
【0023】また、プローブピン17は、図3及び図4
に示すように、検査を行う必要がある導電膜26の数だ
け設けられており、背面側電極24を接続するための背
面側電極端子241(順にP1、Q1、P2、Q2、P3、
Q3…、等と交互に配列する)に接触するように配置さ
れることで、背面側電極端子241を介して導電膜26
と導通する。更に、プローブピン17は導通試験器18
に接続されている。この導通試験器18は真空槽外に設
けられており、隔壁25によって仕切られる導電膜26
間の抵抗を計測することで、導電膜26導通の有無又は
程度を表示する。Further, the probe pin 17 is connected to each of FIGS.
As shown in the figure, the same number of conductive films 26 that need to be inspected are provided, and the back electrode terminals 241 (in order of P 1 , Q 1 , P 2 , Q 2 , P 3 ,
Q 3, ..., Etc.) are arranged so as to be in contact with each other.
To conduct. Further, the probe pin 17 is connected to the continuity tester 18.
It is connected to the. The continuity tester 18 is provided outside the vacuum chamber, and has a conductive film 26 partitioned by a partition 25.
The presence or absence or degree of conduction of the conductive film 26 is displayed by measuring the resistance between them.
【0024】(2)検査方法 上記検査装置1aを用いた有機EL素子用隔壁の検査方
法を説明する。 (a)本検査を行う作製中素子2bは、隔壁製造工程まで
の工程を経た有機EL素子2a用の作製中素子であっ
て、製造ラインから任意に抽出した。つまり、図2に示
すように基板21上に、ITO等によって基板側電極2
2が形成される基板側電極形成工程と、任意の方法で行
われる隔壁形成工程とを行った作製中素子2bである。
この作製中素子2bを真空槽11内に入れ、真空槽11
内のパターンマスク15上に置いた後、1.3Pa(1
0- 2Torr)程度まで減圧する。(2) Inspection Method An inspection method of the organic EL element partition using the inspection apparatus 1a will be described. (a) The element 2b under fabrication for which the main inspection is performed is an element under fabrication for the organic EL element 2a which has been subjected to the steps up to the step of manufacturing the partition wall, and was arbitrarily extracted from the production line. That is, as shown in FIG. 2, the substrate-side electrode 2 is formed on the substrate 21 by ITO or the like.
2 is an in-process element 2b that has been subjected to the substrate-side electrode forming step of forming the second electrode 2 and the partition wall forming step performed by an arbitrary method.
The device 2b is put into the vacuum chamber 11 during the fabrication, and
After being placed on the pattern mask 15 in the
0 - 2 Torr) vacuo extent.
【0025】(b)導電膜材料(Al)を入れたるつぼ1
3を加熱し、るつぼ13内の導電膜材料を蒸発させ、作
製中素子2b上に導電膜26を蒸着形成する。尚、作製
される導電膜は、導通試験を行うことさえできればよい
ため、背面側電極ほどの厳密な制御(例えば膜厚センサ
の使用等)を必要としない。このため、多少の膜厚及び
むらは、問題とならない。(B) Crucible 1 containing conductive film material (Al)
3, the conductive film material in the crucible 13 is evaporated, and a conductive film 26 is formed on the element 2b by vapor deposition. Note that the conductive film to be manufactured only needs to be able to perform a conduction test, and thus does not require strict control (for example, use of a film thickness sensor or the like) as much as the back side electrode. For this reason, slight film thickness and unevenness do not pose a problem.
【0026】導電膜26が形成された作製中素子2bの
模式図を図3に示す。図3に示すように、作製中素子2
bは、基板21と、基板側電極22と、隔壁25と、導
電膜26とを備える。また、導電膜26は、図3及び図
13に示すように背面側電極24と同一形状であり、基
板21、基板側電極22及び隔壁25上にそれぞれ形成
される。このため、作製中素子2bに有機EL膜23を
形成した場合と同様に、隔壁に欠損等の不良部位Bが生
じていた不良素子2cである場合は、図5に示すよう
に、基板21又は基板側電極22上の隔壁25を挟んで
隣接する導電膜26と、隔壁25上の導電膜26とがそ
れぞれ導通することになる。FIG. 3 is a schematic view of the device 2b during fabrication in which the conductive film 26 is formed. As shown in FIG.
b includes a substrate 21, a substrate-side electrode 22, a partition 25, and a conductive film 26. The conductive film 26 has the same shape as the rear electrode 24 as shown in FIGS. 3 and 13, and is formed on the substrate 21, the substrate electrode 22, and the partition 25, respectively. For this reason, similarly to the case where the organic EL film 23 is formed on the element 2b during the fabrication, in the case of the defective element 2c in which a defective portion B such as a defect has occurred in the partition, as shown in FIG. The conductive film 26 adjacent to the partition wall 25 on the substrate-side electrode 22 and the conductive film 26 on the partition wall 25 are electrically connected to each other.
【0027】(c)ヒータ14の加熱を止め、隔壁25に
よって仕切られる各導電膜の導通を調べるためにプロー
ブピン17を接続する。この接続する部位は、図1及び
図4に示すように背面側電極24に接続するための背面
側電極端子241(P1、Q1、P2、Q2、P3、Q3…)
を用い、それぞれにプローブピンが接続される。その
後、導通試験器18にて導電膜26間の抵抗を測定す
る。このとき、大きな導通があれば、短絡が生じている
ため、検査した作製中素子2bが不良であることがわか
る。(C) The heating of the heater 14 is stopped, and the probe pins 17 are connected to check the continuity of each conductive film partitioned by the partition 25. As shown in FIGS. 1 and 4, the connection portion is a back electrode terminal 241 (P 1 , Q 1 , P 2 , Q 2 , P 3 , Q 3 ...) For connection to the back electrode 24.
Are connected to the probe pins. Then, the resistance between the conductive films 26 is measured by the continuity tester 18. At this time, if there is a large continuity, a short circuit has occurred, and it is understood that the inspected element 2b during fabrication is defective.
【0028】尚、導電膜26間の抵抗は、製造不良によ
る不良が無い場合は高抵抗となるが、マトリクス型等の
有機EL素子は、図3に示すように、導電膜26間が基
板側電極22によって接続されている場合があり、IT
O等によって構成される基板側電極22による抵抗値
は、導電膜26の短絡による抵抗値に比べ無視できない
程度に小さいが、基板側電極22を介した電流が流れ、
低い抵抗値となる場合がある。この場合、導電膜26間
の短絡を判別するには、基板側電極22による抵抗値未
満となるかどうかで判断する必要があり、微小な抵抗値
を高精度に測定するために4端子法による抵抗測定を行
う。The resistance between the conductive films 26 is high when there is no defect due to manufacturing defects. However, in the case of a matrix type organic EL element, as shown in FIG. May be connected by the electrode 22,
Although the resistance value of the substrate-side electrode 22 composed of O or the like is not negligibly small as compared with the resistance value due to the short-circuit of the conductive film 26, the current flows through the substrate-side electrode 22,
The resistance may be low. In this case, in order to determine a short circuit between the conductive films 26, it is necessary to determine whether or not the resistance value is smaller than the resistance value of the substrate-side electrode 22. In order to measure a minute resistance value with high accuracy, a four-terminal method is used. Perform a resistance measurement.
【0029】(3)本検査方法の効果 このような有機EL素子用隔壁の検査方法は、隔壁25
を作製した作製中素子2bを製造ラインから抽出し、作
製中素子2bに導電膜26を形成し、隔壁25によって
仕切られる導電膜26間の短絡を検査することで、有機
EL膜23及び背面側電極24を形成することなく隔壁
25の不良を検査することができる。また、図1及び図
4に示す背面側電極端子241の位置に、導通試験器1
8のプローブピン17を各導電膜26に接続すること
で、短絡の検査を一度で行うことができ、短時間で検査
することができる。更に、検査装置1aは、導通試験用
のプローブピン17を真空槽11内に一体として備えて
いるため、導電膜26の蒸着後、導電膜26にプローブ
ピン17を接触させることが容易である。また、導電膜
26を形成後も減圧下で導通試験を行うことにより、形
成した導電膜26が酸化等によって劣化することを防ぐ
ことができ、正確な検査を行うことができる。(3) Effect of the Inspection Method Such an inspection method of the partition wall for the organic EL element is performed by the partition 25
By extracting the element 2b being manufactured from the manufacturing line, forming a conductive film 26 on the element 2b being manufactured, and inspecting the short circuit between the conductive films 26 partitioned by the partition walls 25, the organic EL film 23 and the back side are manufactured. The defect of the partition 25 can be inspected without forming the electrode 24. The continuity tester 1 is located at the position of the rear electrode terminal 241 shown in FIGS.
By connecting the eight probe pins 17 to the respective conductive films 26, a short-circuit inspection can be performed at once, and the inspection can be performed in a short time. Furthermore, since the inspection device 1a includes the probe pin 17 for the continuity test in the vacuum chamber 11, it is easy to bring the probe pin 17 into contact with the conductive film 26 after the deposition of the conductive film 26. Further, by conducting a conduction test under reduced pressure even after the formation of the conductive film 26, the formed conductive film 26 can be prevented from being deteriorated by oxidation or the like, and an accurate inspection can be performed.
【0030】このため、隔壁作製工程を終えた時点で隔
壁25の検査を行うことができ、しかも短時間で行うこ
とができるので、同一ロットの作製中素子2bが有機E
L膜23及び背面側電極24の形成工程を経て完成する
までに検査を行い、不良素子を多く作製することを防ぐ
ことができる。For this reason, the partition 25 can be inspected at the end of the partition forming step, and can be performed in a short time.
Inspection is performed before completion through the process of forming the L film 23 and the back-side electrode 24, thereby preventing the production of many defective elements.
【0031】〔実施例2〕本実施例2の有機EL素子用
隔壁の検査方法は、検査を容易に行うことができる形状
の隔壁を作製した作製中有機EL素子である作製中素子
2eに、プローブピン接続部位を具備する導電膜を形成
し、隔壁によって仕切られる導電膜間の短絡を検査する
方法である。この作製中素子2eは、図7に示すよう
に、端部を検査用隔壁部251によって接続し、蛇行形
状となった隔壁25を備える。[Embodiment 2] In the method of inspecting a partition for an organic EL element of the present embodiment 2, an in-production element 2e which is an in-production organic EL element in which a partition having a shape which can be easily inspected is manufactured. This is a method in which a conductive film having a probe pin connection site is formed, and a short circuit between the conductive films separated by partition walls is inspected. As shown in FIG. 7, the element 2 e during manufacture has a meandering partition wall 25, the ends of which are connected by an inspection partition 251.
【0032】(1)検査装置の構成 本検査方法に用いる検査装置1bを図6に示す。この検
査装置1bは、実施例1と同様の構造であり、図6に示
すように、真空槽11、固定部材12、るつぼ13、ヒ
ータ14、パターンマスク15、周縁マスク16、プロ
ーブピン17、導通試験器18とを備える。また、真空
槽11、固定部材12、るつぼ13、ヒータ14、パタ
ーンマスク15及び周縁マスク16は「蒸着装置」に該
当する。更に、プローブピン17及び導通試験器18は
「導通試験装置」に該当する。また、実施例2の検査装
置1bのプローブピン17は、実施例1とは異なり、一
組(二ヶ所)のみ設けられている。これらプローブピン
17は、図8及び図9に示すように、作製中素子上2e
に形成された背面側電極端子241(P、P、P…、
Q、Q、Q…)のいずれかに接触するように設けられて
いる。これにより、導通試験器18は導電膜26に電気
的に接続される。(1) Configuration of Inspection Apparatus FIG. 6 shows an inspection apparatus 1b used in the present inspection method. The inspection device 1b has the same structure as that of the first embodiment, and as shown in FIG. 6, a vacuum chamber 11, a fixing member 12, a crucible 13, a heater 14, a pattern mask 15, a peripheral mask 16, a probe pin 17, And a tester 18. Further, the vacuum chamber 11, the fixing member 12, the crucible 13, the heater 14, the pattern mask 15, and the peripheral mask 16 correspond to an “evaporation apparatus”. Further, the probe pin 17 and the continuity tester 18 correspond to a “continuity test device”. Further, unlike the first embodiment, only one set (two places) of the probe pins 17 of the inspection device 1b of the second embodiment is provided. As shown in FIG. 8 and FIG. 9, these probe pins 17
, The back-side electrode terminals 241 (P, P, P...
Q, Q, Q,...). Thereby, the continuity tester 18 is electrically connected to the conductive film 26.
【0033】(2)検査方法 上記検査装置1bを用いた有機EL素子用隔壁の検査方
法を説明する。 (a)本検査を行う作製中素子2eは、隔壁製造工程まで
の工程を経た有機EL素子2d用の作製中素子2eであ
って、製造ラインから任意に抽出した。つまり、図7に
示すように基板21上に、ITO等によって基板側電極
22が形成される基板側電極形成工程と、任意の方法で
行われる隔壁形成工程とを行った、作製中素子2eであ
る。また、この作製中素子2eの隔壁形状は実施例1の
隔壁形状とは異なり、実施例1における隔壁の端部を交
互に接続する本検査用隔壁部251となる部位を備え
る。この作製中素子2eを真空槽11内に入れ、真空槽
11内のパターンマスク15上に置いた後、1.3Pa
(10- 2Torr)程度まで減圧する。(2) Inspection Method A method of inspecting a partition for an organic EL element using the inspection apparatus 1b will be described. (a) The element 2e during the production to be subjected to the main inspection was the element 2e during the production for the organic EL element 2d which had undergone the steps up to the step of producing the partition walls, and was arbitrarily extracted from the production line. That is, as shown in FIG. 7, the element 2e during the production performed the substrate-side electrode forming step of forming the substrate-side electrode 22 on the substrate 21 by ITO or the like and the partition wall forming step performed by an arbitrary method. is there. In addition, the shape of the partition wall of the element 2e during the fabrication is different from the partition shape of the first embodiment, and includes a part to be a main inspection partition portion 251 that connects the ends of the partition wall in the first embodiment alternately. The element 2e during the production was put in the vacuum chamber 11 and placed on the pattern mask 15 in the vacuum chamber 11, and then 1.3 Pa
(10 - 2 Torr) vacuo extent.
【0034】(b)導電膜材料(Al)を入れたるつぼ1
3を加熱し、るつぼ13内の導電膜材料を蒸発させ、作
製中素子2e上に導電膜26を蒸着形成する。導電膜2
6が形成された作製中素子2eの模式図を図8に示す。
図8に示すように、作製中素子2eは、基板21と、基
板側電極22と、隔壁25と、導電膜26とを備える。
また、導電膜26は、図8に示すように、基板21、基
板側電極22、及び隔壁25上にそれぞれ形成される。
また、背面側電極24と同様のパターン形状となる部位
に加えて、平行に整列するパターンを一つおきに接続す
るプローブピン接続用パターンを備える。(B) Crucible 1 containing conductive film material (Al)
3, the conductive film material in the crucible 13 is evaporated, and a conductive film 26 is formed on the element 2e by vapor deposition. Conductive film 2
FIG. 8 is a schematic view of the element 2e during fabrication in which 6 is formed.
As shown in FIG. 8, the element 2 e during manufacture includes a substrate 21, a substrate-side electrode 22, a partition 25, and a conductive film 26.
8, the conductive film 26 is formed on the substrate 21, the substrate-side electrode 22, and the partition 25, respectively.
In addition to the portions having the same pattern shape as the back side electrode 24, a probe pin connection pattern for connecting every other pattern aligned in parallel is provided.
【0035】(c)ヒータ14の加熱を止め、隔壁25に
よって仕切られる各導電膜にの導通を調べるためにプロ
ーブピン17を接続する。この接続する部位は、図6及
び図9に示すように背面側電極24に接続するための任
意の背面側電極端子241(P、Q)を用いる。その
後、導通試験器18にて導電膜26間の抵抗を測定す
る。このとき、図10の不良素子2fに例示するように
隔壁が正常に形成されておらず、導通があれば、短絡が
生じているため、検査した作製中素子2bが不良である
ことがわかる。(C) The heating of the heater 14 is stopped, and the probe pins 17 are connected to check the continuity of each conductive film partitioned by the partition 25. As the connection portion, an arbitrary back side electrode terminal 241 (P, Q) for connecting to the back side electrode 24 is used as shown in FIGS. Then, the resistance between the conductive films 26 is measured by the continuity tester 18. At this time, as illustrated by the defective element 2f in FIG. 10, if the partition is not formed normally and there is continuity, a short circuit has occurred, and it is understood that the inspected element 2b during manufacture is defective.
【0036】尚、導電膜26間の抵抗は、実施例1と同
様に基板側電極22及び背面側電極端子241による低
い抵抗値となる場合がある。このため、短絡かどうか
は、基板側電極22及び背面側電極端子241による抵
抗値未満となるかどうかで判断する必要があり、微小な
抵抗値を高精度に測定するために4端子法による抵抗測
定を行う。The resistance between the conductive films 26 may have a low resistance value due to the substrate-side electrode 22 and the back-side electrode terminal 241 as in the first embodiment. For this reason, it is necessary to determine whether or not a short-circuit occurs by determining whether or not the resistance is less than the resistance value of the substrate-side electrode 22 and the back-side electrode terminal 241. Perform the measurement.
【0037】(3)本検査方法の効果 このような有機EL素子用隔壁の検査方法は、隔壁25
を作製した作製中素子2bを製造ラインから抽出し、作
製中素子2eに導電膜26を形成し、隔壁25によって
仕切られる導電膜26間の短絡を検査することで、有機
EL膜23及び背面側電極24を形成することなく隔壁
25の不良を検査することができる。また、図6及び図
9に示すように、導通試験器18を各導電膜26に接続
することで、短絡の検査を一度で行うことができ、短時
間で検査することができる。(3) Effects of the Inspection Method Such an inspection method of the partition for an organic EL element is performed by the partition 25
By extracting the element 2b during fabrication from which the organic EL film 23 was formed, a conductive film 26 was formed on the element 2e during fabrication, and a short circuit between the conductive films 26 partitioned by the partition walls 25 was inspected. The defect of the partition 25 can be inspected without forming the electrode 24. In addition, as shown in FIGS. 6 and 9, by connecting the continuity tester 18 to each conductive film 26, a short-circuit inspection can be performed at once, and the inspection can be performed in a short time.
【0038】更に、作製中素子2eに検査用隔壁部25
1を備えるとともに、平行に整列するパターンを一つお
きに接続するプローブピン接続用パターンを備えるた
め、接続するプローブピン17が一組で済み、実施例1
に比べてプローブピン17の配設数を減らすことができ
るとともに、端子の間隔が100〜500μmと狭い場
合であってもプローブピン17の位置精度を繊細なもの
とする必要が無い。また、本検査方法は二の導電膜26
が通常互いに接触しないように、作製中素子2e上に検
査用隔壁部251を形成しているが、検査用隔壁部25
1を残存させたまま、有機EL膜23及び背面側電極2
4を形成して有機EL素子2dとした場合においても、
図11に示すように別の部位に干渉せず、製品としての
不都合の要因となることがない。Further, the inspection partition 25 is provided on the element 2e during the fabrication.
1 and a probe pin connection pattern for connecting every other pattern arranged in parallel, so that only one set of probe pins 17 to be connected is required.
The number of the probe pins 17 can be reduced as compared with the above, and the positional accuracy of the probe pins 17 does not need to be delicate even when the terminal interval is as narrow as 100 to 500 μm. In addition, this inspection method uses the two conductive films 26.
Are formed on the element 2e during fabrication so that they do not normally contact each other.
1 and the organic EL film 23 and the back electrode 2
4 to form an organic EL element 2d,
As shown in FIG. 11, it does not interfere with another part and does not cause any inconvenience as a product.
【0039】このため、隔壁作製工程を終えた時点で隔
壁25の検査を行うことができ、しかも短時間で行うこ
とができるので、同一ロットの作製中素子2bが有機E
L膜23及び背面側電極形成工程を経て完成するまでに
検査を行い、不良素子を多く作製することを防ぐことが
できる。Therefore, the partition 25 can be inspected at the end of the partition forming step, and can be performed in a short time.
Inspection is performed before completion through the process of forming the L film 23 and the back side electrode, thereby preventing the production of many defective elements.
【0040】尚、本発明においては、上記実施例に限ら
ず、目的、用途に応じて本発明の範囲内で種々変更した
実施例とすることができる。即ち、本実施例では、製造
ラインと分離した検査装置を用意して成膜及び検査を行
ったが、これに限らず、製造ライン内で導電膜の形成及
び検査を行ってもよい。また、実施例の検査装置は真空
槽内にプローブピンが設けられていたが、別体として導
電膜を形成した作製中素子を真空槽から取り出し、プロ
ーブピンに接続して試験を行うこともできる。The present invention is not limited to the above-described embodiment, but may be variously modified within the scope of the present invention according to the purpose and application. That is, in this embodiment, the film formation and the inspection are performed by preparing the inspection apparatus separated from the production line, but the invention is not limited thereto, and the formation and the inspection of the conductive film may be performed in the production line. In addition, in the inspection apparatus of the embodiment, the probe pins are provided in the vacuum chamber. However, it is also possible to perform the test by taking out the element under manufacture in which the conductive film is separately formed from the vacuum chamber and connecting to the probe pins. .
【0041】更に、検出精度を高めるため、図12に示
すように導電膜26の下層に、絶縁層27を形成しても
よい。この絶縁層27としてはSiO2、TiO3等を蒸
着形成することを挙げることができる。このような絶縁
層27を備えることで、基板側電極による導通を防止す
ることができ、純粋に隔壁の欠損による短絡の検査を行
うことができるため、微小な隔膜の欠損に対する検出能
力が向上する。尚、絶縁層27を成膜する時は、背面側
電極端子241と導電膜26が絶縁されないようにパタ
ーンマスク15を変える必要がある。また、隔膜の形成
が全く同じ品質或いは、差があっても十分に無視できる
ほどの差しか生じないことが確認されれば、本検査用に
基板側電極の無い絶縁性の基板上に隔壁を製造ライン内
で形成した後、本検査を実施することができる。この場
合も、また、基板側電極の影響を受けないので、純粋に
隔壁の欠損による短縮の検査を行うことができるため、
微小な隔壁の欠損に対する検出能力が向上する。Further, in order to increase the detection accuracy, an insulating layer 27 may be formed below the conductive film 26 as shown in FIG. The insulating layer 27 may be formed by vapor deposition of SiO 2 , TiO 3 or the like. By providing such an insulating layer 27, conduction by the substrate-side electrode can be prevented, and a short circuit due to a defect of a partition wall can be purely inspected, so that a detection capability for a minute defect of a diaphragm is improved. . When the insulating layer 27 is formed, it is necessary to change the pattern mask 15 so that the back electrode terminal 241 and the conductive film 26 are not insulated. In addition, if it is confirmed that the formation of the diaphragm is completely the same quality or that there is no negligible difference even if there is a difference, a partition is formed on an insulating substrate having no substrate side electrode for this inspection. After being formed in the production line, the main inspection can be performed. Also in this case, since it is not affected by the substrate-side electrode, it is possible to perform a pure inspection of the shortening due to the defect of the partition wall.
The ability to detect minute defects in the partition walls is improved.
【0042】また、一枚の基板原板から複数枚の有機E
L素子が得られる場合、全ての作製中素子を本検査方法
を用いて検査を行わずに、適宜任意部位の作製中素子を
切り取って検査を行うことができる。このように、検査
対象を小さくすることで、本検査装置を小型化できると
ともに、減圧に必要な時間を減らすことができ、迅速な
検査を行うことができる。Further, a plurality of organic E
When the L element is obtained, the inspection can be performed by appropriately cutting out the element under manufacture at an arbitrary part without inspecting all the elements under fabrication using the present inspection method. As described above, by reducing the size of the inspection target, the present inspection apparatus can be downsized, the time required for decompression can be reduced, and a quick inspection can be performed.
【0043】[0043]
【発明の効果】本各発明の有機EL素子用隔壁の検査方
法及び検査装置によれば、有機EL薄膜及び背面側電極
を形成することなく隔壁の不良を検査することができ
る。これによって、隔壁の不良を早期に発見することが
できる。また、第1発明の有機EL素子用隔壁の検査方
法によれば、有機EL素子の隔壁に手を加えることなく
検査を行うことができる。更に、第3発明の有機EL素
子用隔壁の検査方法によれば、グローブピンの数を減ら
すことができ検査装置を簡素なものとすることができ
る。また、第5発明の有機EL素子用隔壁の検査装置に
よれば、プローブピンを真空槽内に配設することで、正
確な検査を行うことができる。According to the method and apparatus for inspecting a partition for an organic EL element of the present invention, it is possible to inspect the partition for defects without forming an organic EL thin film and a back side electrode. Thereby, the defect of the partition can be found at an early stage. Further, according to the method for inspecting a partition for an organic EL element of the first invention, an inspection can be performed without modifying the partition of the organic EL element. Further, according to the method for inspecting a partition for an organic EL element of the third invention, the number of globe pins can be reduced and the inspection apparatus can be simplified. Further, according to the inspection apparatus for a partition for an organic EL element of the fifth invention, an accurate inspection can be performed by disposing the probe pins in the vacuum chamber.
【図1】本実施例1の検査装置の構成を説明するための
断面図である。FIG. 1 is a cross-sectional view illustrating a configuration of an inspection apparatus according to a first embodiment.
【図2】実施例1の作製中素子を説明するための(a)平
面図、及び(b)断面図である。FIGS. 2A and 2B are a plan view and a cross-sectional view for explaining a device during fabrication of Example 1. FIGS.
【図3】実施例1の作製中素子に導電膜を形成した様子
を説明するための(a)平面図、及び(b)断面図である。FIGS. 3A and 3B are a plan view and a cross-sectional view illustrating a state in which a conductive film is formed on a device during fabrication in Example 1. FIGS.
【図4】実施例1の導電膜と導通試験器の接続を説明す
るための模式図である。FIG. 4 is a schematic diagram for explaining connection between a conductive film and a continuity tester of Example 1.
【図5】実施例1の不良素子に導電膜を形成した様子を
説明するための(a)平面図、及び(b)断面図である。FIGS. 5A and 5B are a plan view and a cross-sectional view illustrating a state in which a conductive film is formed on the defective element of Example 1. FIGS.
【図6】本実施例2の検査装置の構成を説明するための
断面図である。FIG. 6 is a cross-sectional view for explaining a configuration of the inspection device according to the second embodiment.
【図7】実施例2の作製中素子を説明するための(a)平
面図、及び(b)断面図である。FIGS. 7A and 7B are a plan view and a cross-sectional view for explaining a device during fabrication of Example 2. FIGS.
【図8】実施例2の作製中素子に導電膜を形成した様子
を説明するための(a)平面図、及び(b)断面図である。8A is a plan view and FIG. 8B is a cross-sectional view for explaining a state in which a conductive film is formed on a device during fabrication in Example 2. FIG.
【図9】実施例2の導電膜と導通試験器の接続を説明す
るための模式図である。FIG. 9 is a schematic diagram for explaining connection between a conductive film and a continuity tester in Example 2.
【図10】実施例2の不良素子に導電膜を形成した様子
を説明するための(a)平面図、及び(b)断面図である。FIGS. 10A and 10B are a plan view and a cross-sectional view illustrating a state in which a conductive film is formed on a defective element according to the second embodiment.
【図11】実施例2における有機EL素子を説明するた
めの(a)平面図、及び(b)断面図である。FIGS. 11A and 11B are a plan view and a cross-sectional view for explaining an organic EL element according to Example 2. FIGS.
【図12】作製中素子に絶縁膜及び導電膜を形成した様
子を説明するための(a)平面図、及び(b)断面図である。FIGS. 12A and 12B are a plan view and a cross-sectional view illustrating a state in which an insulating film and a conductive film are formed on an element during fabrication. FIGS.
【図13】有機EL素子を説明するための(a)平面図、
及び(b)断面図である。13A is a plan view for explaining an organic EL element, FIG.
(B) is a sectional view.
【図14】不良素子を説明するための(a)平面図、及び
(b)断面図である。14A is a plan view for explaining a defective element, and FIG.
(b) It is sectional drawing.
1a、1b;検査装置、11;真空槽、12;固定部
材、13;るつぼ、14;ヒータ、15;パターンマス
ク、16;周縁マスク、17;プローブピン、18;導
通試験器、2、2a、2d;有機EL素子、2b、2
e;作製中素子、2c、2f;不良素子、21;基板、
22;基板側電極、23;有機EL膜、24;背面側電
極、241;背面側電極端子、25;隔壁、251;検
査用隔壁部、26;導電膜、27;絶縁膜、B;不良部
位、P、P1、P2、P3…、Q、Q1、Q2、Q3…;プロ
ーブピン接続部位。1a, 1b; inspection apparatus, 11; vacuum chamber, 12; fixing member, 13; crucible, 14; heater, 15; pattern mask, 16; peripheral mask, 17; probe pin, 18; 2d; organic EL element, 2b, 2
e; device under fabrication, 2c, 2f; defective device, 21;
22; substrate-side electrode, 23; organic EL film, 24; back-side electrode, 241; back-side electrode terminal, 25; partition, 251; inspection partition, 26; conductive film, 27; insulating film, B; , P, P 1 , P 2 , P 3 ..., Q, Q 1 , Q 2 , Q 3 .
Claims (5)
備える作製中素子の該基板上に、有機EL膜及び背面側
電極が形成されてなる有機EL素子における該隔壁の検
査方法であって、該作製中素子上に導電膜を形成し、該
隔壁に隔てられた隣同士の該導電膜間の導通の有無又は
程度によって該隔壁の良否を判断することを特徴とする
有機EL素子用隔壁の検査方法。1. A method for inspecting a partition in an organic EL device in which an organic EL film and a back side electrode are formed on a substrate of a device under fabrication including a substrate on which a substrate-side electrode and a partition are formed. Forming a conductive film on the element during the fabrication, and judging the quality of the partition based on the presence or absence or degree of conduction between adjacent conductive films separated by the partition. Inspection method.
基板上に並列配設され、上記隔壁は帯状であって且つ該
基板側電極と直交するように並列配設され、上記導電膜
は帯状であって且つ各該隔壁間に並列配列され、 該導電膜間の導通を試験する導通試験装置のプローブピ
ンを上記各背面側電極の端子に接続する請求項1記載の
有機EL素子用隔壁の検査方法。2. The substrate-side electrode has a band shape and is arranged in parallel on the substrate. The partition has a band shape and is arranged in parallel so as to be orthogonal to the substrate-side electrode. 2. The organic EL element partition according to claim 1, wherein a probe pin of a continuity test device for testing continuity between the conductive films is connected to a terminal of each of the rear electrodes, the strip having a band shape and being arranged in parallel between the partition walls. Inspection method.
基板上に並列配設され、上記隔壁は帯状部位が該基板側
電極と直交するように並列配設されるとともに、その端
部を互いに接続した蛇行形状であり、上記導電膜は歯状
部位が各該隔壁間に並列配列されることで互いに噛み合
った1組の櫛歯形状であって、 該導電膜間の導通を試験する導通試験装置のプローブピ
ンを該導電膜に接続する請求項1記載の有機EL素子用
隔壁の検査方法。3. The substrate-side electrode has a band shape and is arranged in parallel on the substrate, and the partition wall is arranged in parallel so that a band-shaped portion is orthogonal to the substrate-side electrode, and has an end portion thereof. The conductive film has a meandering shape connected to each other, and the conductive film has a set of comb teeth in which teeth are arranged in parallel between the partition walls so as to mesh with each other. 2. The method according to claim 1, wherein a probe pin of a test device is connected to the conductive film.
備える作製中素子上に導電膜を形成する蒸着装置と、該
隔壁に隔てられた隣同士の該導電膜間の導通を試験する
導通試験装置とを備え、 上記導通試験装置は、該隔壁に隔てられた隣同士の該導
電膜間にそれぞれ接続される少なくとも一組のプローブ
ピンと、各該プローブピンに接続される該導通試験器と
を具備することを特徴とする有機EL素子用隔壁の検査
装置。4. A vapor deposition apparatus for forming a conductive film on a device under manufacture provided with a substrate on which a substrate-side electrode and a partition wall are formed, and a continuity test for testing a continuity between adjacent conductive films separated by the partition wall. A test device, wherein the continuity test device includes at least one set of probe pins connected between the adjacent conductive films separated by the partition, and the continuity tester connected to each probe pin. An inspection device for a partition for an organic EL element, comprising:
設され、上記各該導電膜に接続される請求項4記載の有
機EL素子用隔壁の検査装置。5. The organic EL device partition wall inspection apparatus according to claim 4, wherein the probe pins are provided in the vacuum chamber and connected to the conductive films.
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JP2000038706A JP2001230076A (en) | 2000-02-16 | 2000-02-16 | Inspection method and device for organic el element barrier rib |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006066111A (en) * | 2004-08-25 | 2006-03-09 | Optrex Corp | Manufacturing method of organic el display device, inspection method of element substrate, and organic el display device |
KR101334781B1 (en) * | 2007-02-02 | 2013-11-29 | 삼성디스플레이 주식회사 | Inspecting apparatus of mother substrate |
EP3291325A1 (en) * | 2016-08-31 | 2018-03-07 | LG Display Co., Ltd. | Display device and testing method thereof |
-
2000
- 2000-02-16 JP JP2000038706A patent/JP2001230076A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006066111A (en) * | 2004-08-25 | 2006-03-09 | Optrex Corp | Manufacturing method of organic el display device, inspection method of element substrate, and organic el display device |
KR101334781B1 (en) * | 2007-02-02 | 2013-11-29 | 삼성디스플레이 주식회사 | Inspecting apparatus of mother substrate |
EP3291325A1 (en) * | 2016-08-31 | 2018-03-07 | LG Display Co., Ltd. | Display device and testing method thereof |
CN107808930A (en) * | 2016-08-31 | 2018-03-16 | 乐金显示有限公司 | Display device and its method of testing |
US10134646B2 (en) | 2016-08-31 | 2018-11-20 | Lg Display Co., Ltd. | Display device and testing method thereof |
CN107808930B (en) * | 2016-08-31 | 2019-06-18 | 乐金显示有限公司 | Display device and its test method |
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