JP2001208773A - Inspecting apparatus and probe card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inspecting apparatus provided with a probe card which can inspect adequately an object to be inspected even in the case of heating and cooling. SOLUTION: This inspecting apparatus is provided with a performance substrate on which terminals for inspection are arranged, a contactor substrate on which probes coming into contact with an object to be inspected are arranged, and the probe card interposing between the probes of the contactor substrate and the terminals of the performance substrate. The probe card is a multilayer substrate formed by laminating thin resin films on a ceramic board.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inspection apparatus provided with a probe for determining whether a conductor circuit formed on a silicon wafer or the like is formed as designed, and a probe card.

[0002]

2. Description of the Related Art Inspection of an integrated circuit formed on a silicon wafer is carried out by pressing a probe against an inspection portion of the silicon wafer, causing a current to flow, and checking conduction, insulation, and the like. At present, as semiconductor chips become more highly integrated, the degree of integration of conductor circuits formed on silicon wafers also increases,
The inspection pitch by the probe has been narrowed, and it has become difficult to directly attach the probe to the head (performance board) of the inspection apparatus.

In order to cope with such a problem, a relay board (probe card) is interposed, and a contactor board provided with a probe is mounted on a head (performance board). The probe card (relay substrate) is made of a multilayer resin substrate, and connects a wide-pitch terminal of the contactor substrate and a probe of a narrow pitch on the performance substrate.

[0004]

At present, temperature characteristics are tested in a state of a silicon wafer. That is,
The silicon wafer on which the conductor circuits are formed is tested for low-temperature performance while being cooled to minus several tens of degrees Celsius, and the high-temperature performance is tested when heated to one hundred and several tens degrees Celsius. However, for example, when a probe card made of only a resin having a conductor circuit formed therein or a probe card made of an alumina ceramic plate is used, at the time of such heating / cooling,
In some cases, the tip of the probe was displaced from the inspection site and could not be contacted, and it was sometimes determined that the silicon wafer had failed.

[0005] The present invention has been made to solve the above-mentioned problems, and an object thereof is to provide a heating / heating apparatus.
An object of the present invention is to provide an inspection apparatus provided with a probe card capable of appropriately inspecting an inspection object even during cooling, and a probe card used for the inspection apparatus.

[0006]

In order to achieve the above object, an inspection apparatus of the present invention comprises a performance board provided with terminals for inspection and a contactor board provided with probes for contacting an object to be inspected. An inspection apparatus comprising: a probe of the contactor board; and a probe card interposed between terminals of the performance board,
The probe card is a multilayer substrate formed by laminating a resin thin film on a ceramic plate.

In the inspection apparatus of the present invention, since the probe card is formed by laminating a resin thin film on a ceramic plate, the entire probe card is close to the coefficient of thermal expansion of the ceramic plate,
It is almost equal to the coefficient of thermal expansion of the silicon wafer. Therefore, when the silicon wafer is heated and cooled, the probe card thermally contracts at the same rate as that of the silicon wafer, so that the probe does not deviate from the inspection position of the silicon wafer, and the inspection can be performed appropriately.

In the above inspection apparatus, the ceramic plate of the probe card is preferably made of a non-oxide ceramic.

When the ceramic plate of the probe card is made of non-oxide ceramic, it has high thermal conductivity,
Following the temperature change of the silicon wafer, it can be thermally shrunk together with the silicon wafer.

In the above inspection apparatus, the resin thin film is preferably made of a thermosetting resin.

When the resin thin film is made of a thermosetting resin, the surface of the probe card can have high toughness.

A probe card according to the present invention is a probe card used for an inspection apparatus for judging the quality of a conductor circuit formed on a silicon wafer, and a resin thin film is formed on a ceramic plate having through holes. Conductive circuits are sequentially laminated and formed, and these conductive circuits are connected by via holes.

In the above probe card, since the resin thin film and the conductor circuit are formed on a high strength ceramic plate, the coefficient of thermal expansion of the resin thin film and the conductor circuit is governed by the coefficient of thermal expansion of the ceramic plate. It is approximately the same as the coefficient of thermal expansion of the ceramic plate, and therefore approximately equal to the coefficient of thermal expansion of the silicon wafer. For this reason, when the silicon wafer is heated and cooled, the probe card also thermally expands and contracts at the same ratio as the silicon wafer. For example, the probe on the contactor substrate and the conductor circuit exposed on the resin layer surface of the probe card A connection failure does not occur at the contact portion with the conductor, and the conductor circuit formed on the silicon wafer can be properly inspected.

In the probe card, the ceramic plate is preferably made of a nitride ceramic, and the resin thin film is preferably made of a thermosetting resin, especially polyimide. This is because nitride ceramics, particularly aluminum nitride, have high thermal conductivity and follow the temperature change of the silicon wafer, and polyimide can give the probe card surface high toughness.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First, an inspection apparatus according to the present invention will be described. The inspection apparatus of the present invention is an inspection apparatus including a performance board provided with terminals for inspection, a contactor board provided with a probe in contact with an object to be inspected, and a probe card. But,
An inspection apparatus characterized in that the inspection apparatus is a multilayer substrate formed by laminating a resin thin film on a ceramic plate.

The above-described inspection apparatus is the same in that the probe card is a multi-layer substrate formed by laminating a resin thin film on a ceramic plate. it can.

That is, as shown in FIG. 2, the first inspection device of the present invention comprises a performance substrate provided with terminals for inspection and a contactor substrate provided with probes for contacting an object to be inspected. And a probe card interposed between the probe of the contactor board and the terminal of the performance board. The second testing apparatus of the present invention is a testing apparatus as shown in FIG. A contactor board on which a probe for contacting the object to be inspected is arranged, and a probe card electrically connected to the probe of the contactor board. It is an inspection device configured to be arranged between a substrate and the probe card.

First, a first inspection apparatus of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view schematically showing a first embodiment of the first inspection apparatus. The inspection apparatus 10 has a table 26 on which a silicon wafer 60 is placed and which performs position adjustment in the X, Y, and Z directions, a performance substrate 24 on which terminals for inspection are provided, and X, Y, Lifting device 22 for adjusting the position in the Z direction
And the silicon wafer 60 through the performance substrate 24
And a tester 20 for applying a current thereto to determine the suitability. Below the table 26, a silicon wafer 26
And a cooling device 29 using a Peltier mechanism for cooling to -50.degree. C., and electric power is supplied to the heater 28 from a power source (not shown).

FIG. 2 is an explanatory diagram showing the vicinity of the performance board 24 in an enlarged manner. Performance board 24
Is provided with a contactor substrate 50 having a probe 52 that directly contacts the silicon wafer 60 via a probe substrate 30 and a probe card 40 sequentially disposed therebelow. A cross section of the probe board 30, the probe card 40 and the contactor board 50 is shown in FIG. 3, and a part of the probe card 40 is shown in FIG.

The probe board 30 for connecting the performance board 24 and the probe card 40 is made of machinable ceramic having a through hole 30a, and the through hole 30a has the terminal 25 of the performance board 24 and the probe card 40. A metal probe 32 for connecting to the through hole 41 is disposed.

As shown in FIG. 4, the probe card 40 has a ceramic plate 42 in which a through hole 41 is formed, via holes 46, 146, 246, and conductor circuits 48, 148, 248. And an interlayer resin insulation layer (resin thin film) 44, 144, 244. The outermost resin layer 49 and the resin thin films 44, 144, 24
4 is desirably at least one selected from a polyimide resin, an epoxy resin, a bismaleimide-triazine resin, a benzocyclobutene, an olefin resin, and a Teflon (registered trademark) resin. Further, the outermost conductive circuit may be covered with a resin.

The through hole 41 formed inside the ceramic plate 42 is connected to a via hole 46 formed in the interlayer resin insulation layer 44, and the via hole 46 is It is connected to a via hole 146 formed in the insulating layer 144. Similarly, via hole 146 is connected to via hole 246 formed in interlayer resin insulation layer 244 via conductor circuit 148. Then, a part of the conductor circuit 248 connected to the via hole 246 is exposed, and the upper end of the probe 52 of the contactor substrate 50 abuts on the exposed conductor circuit 248, and the terminal 25 of the performance substrate 24 and the probe of the contactor substrate 50 The connection with the terminal 52 is established.

Here, the thickness of the ceramic plate 42 is 4 m
m, and the through holes 41 of 60 μm square are arranged at the pitch P 1 (800 μm) of the terminals 25 of the performance board 24.
m). On the other hand, the interlayer resin insulation layers 44, 144, 244 are each formed to a thickness of 10 μm.

The contactor substrate 50 has a diameter of 100 μm.
Is formed of a 4 mm square machinable ceramic having a through hole 50a, and a probe 52 having a diameter of 100 μm is inserted into the through hole 50a. The probe 52 has a pitch P2 (80) between the inspection pads 62 of the silicon wafer 60.
μm). The probe 52 includes an outer probe 52A and an inner probe 52B, each of which has a cylindrical inside.
Is slidably disposed in the outer probe 52A,
It is urged downward (toward the silicon wafer 60) by the spring 52C.

By incorporating an extension mechanism in the probe 52, the inner probe 52B can be moved up and down so that it can properly contact the pads 62 having uneven heights. The probe board 30, the probe card 40, and the contactor board 50 are integrally fixed to the performance board 24 by a jig (not shown).

Next, the inspection of the silicon wafer 60 by the first inspection apparatus 10 of the present invention will be described with reference to FIGS. First, the silicon wafer 60 is placed on the table 26, and a positioning mark formed on the silicon wafer is read by an optical device (not shown).
6 is adjusted. Thereafter, the performance board 24 is pushed down by the lifting device 22, and the contactor board 5 is pressed.
The zero probe 52 is pressed against a predetermined pad 62 of the silicon wafer 60. In FIG. 4, the pads are drawn so as to swell for convenience of illustrating the measurement locations of the silicon wafer 60. However, in an actual silicon wafer, the pads 62 are merely specific portions on the formed circuit. Note that it is not particularly exciting.

Next, the tester 20 applies a current to predetermined pads 62 of the silicon wafer 60 via the performance board 24, the probe board 30, the probe card 40, and the contactor board 50 to check whether the conductive circuit is conducting. A characteristic test is performed at room temperature to determine whether or not a portion requiring insulation is insulated.

Subsequently, cooling is started in the cooling device 29, and the silicon wafer 60 is cooled to minus 50 ° C. At this time, the contactor substrate 50 made of machinable ceramic and the ceramic plate 42 of the probe card have high thermal conductivity and are cooled to minus 50 ° C. following the temperature change of the silicon wafer. Here, the contactor substrate 50 made of machinable ceramic is
The coefficient of thermal expansion is close to that of the silicon constituting the silicon wafer,
Further, the ceramic plate 42 constituting the probe card 40
Is made of aluminum nitride having a coefficient of thermal expansion close to that of silicon. For this reason, even in the cooling test, since the contactor substrate 50 and the probe card 40 contract to the same extent as the silicon wafer, the pad 62 of the silicon wafer, the pad 52 of the contactor substrate 50, and the probe card 4
The test can be properly performed without deviation from the 0 conductor circuit 248.

Next, an electric current is applied to the heater 28 to heat the silicon wafer 60 to 150.degree. At this time, the contactor substrate 50 and the probe card 40 are also set
The contactor substrate 50 and the probe card 40 expand to the same extent as the silicon wafer, but the pad 62 of the silicon wafer, the pad 52 of the contactor substrate 50, and the conductor circuit 248 of the probe card 40 are displaced. Test can be performed properly. The interlayer resin insulation layer 4 of the probe card 40
4, 144 and 244 are made of polyimide, and therefore can maintain high toughness even in a high temperature test.

In the probe card 40, interlayer resin insulating layers 44, 144, 244 having a relatively large coefficient of thermal expansion are formed, and the thickness of each interlayer resin insulating layer is 10 μm.
The total thickness of the four layers is 40 μm, whereas the thickness of the ceramic plate 42 is 4 mm. Therefore, the probe card 40 contracts and expands according to the thermal contraction rate and thermal expansion of the ceramic plate 42.

Next, a modification of the first embodiment will be described with reference to FIG. As described with reference to FIG. 4, the contactor substrate 50 uses a probe 52 having a built-in extension mechanism as a probe in order to perform inspection at a pitch of 80 μm. In contrast, in this modified example,
The pads 62 of the silicon wafer 60 are inspected at a pitch of 60 μm. Therefore, in this modified example, as shown in FIG.
Through holes (diameter 25 μm) 150 a are formed at a pitch of 60 μm in the contactor substrate 150, and 20 μm
An m-diameter probe 152 is slidably fitted. That is, in this modification, the probe 152 is supported so as to be slidable up and down, so that variations in the height of the pad 62 can be absorbed.

Next, a second embodiment of the first inspection apparatus of the present invention will be described with reference to FIG. The inspection device according to the second embodiment has the same configuration as the inspection device of the first embodiment described with reference to FIG. However,
In the second embodiment, the contactor substrate 150 is attached to only a part of the probe card 40, that is, only a part where the pads 62 are formed at a fine pitch on the silicon wafer 60, and the pad is mounted on the silicon wafer 60 at a large pitch. A conductive pin (probe) 134 is directly attached to the portion where 62 is formed. In the second embodiment, there is an advantage that the inspection apparatus can be configured at low cost.

In the above-described first and second embodiments, examples have been given in which the inspection apparatus of the present invention is used for inspection of a conductor circuit formed on a silicon wafer. It is needless to say that the present invention can be used for inspection of an object to be inspected using, for example, a semiconductor chip.

FIG. 7 is a sectional view schematically showing a second inspection apparatus of the present invention. In the inspection apparatus of the present invention, each member may be arranged as shown in this figure. . That is, in this inspection apparatus, the performance substrate 24 formed to be larger than the silicon wafer is disposed at the lowermost side, and the silicon wafer 60 is mounted on the central portion of the performance substrate 24. Then, the silicon wafer 60
A contactor substrate 50 having a probe 52 for contacting the silicon wafer 60 is disposed on the contactor substrate 50. Further, a probe card 40 is disposed above the contactor substrate 50, and the silicon wafer 60 and the probe are contacted via the contactor substrate 50. The card 40 is connected.

The probe substrate 30 is disposed around the silicon wafer 60, and connects the performance substrate 24 and the probe card 40. The probe substrate 30 is preferably ring-shaped so that the silicon wafer 60 and the contactor substrate 50, which are the inspection object, can be arranged inside the probe substrate 30.

As described above, in the second inspection apparatus of the present invention, the silicon wafer 60 to be inspected and the contactor substrate 50 are arranged between the probe card 40 and the performance substrate 24. .

In this inspection apparatus, the probe card 40
Are arranged on the probe substrate 30 and the contactor substrate 50, and thus the probe substrate 30
A pad for connecting to the performance substrate 24 is formed through the contactor substrate 5 on the inner side.
Pads for connection to 0 are formed. Further, it is desirable that the probe card 40 has a disk shape. Since such a probe card 40 is arranged on the probe board 30 and the contactor board 50, the probe card 30 and the contactor board 5 are provided only on one main surface.
0 terminal can be contacted, and no through-hole is required.

Next, the probe card of the present invention will be described. The probe card of the present invention is a probe card used for an inspection device for judging the quality of a conductor circuit formed on a silicon wafer, wherein a resin layer and a conductor circuit are formed on a ceramic plate having through holes. Are sequentially formed in a stack, and these conductor circuits are connected by via holes.

As described above, the probe card of the present invention is a probe card used for an inspection device for judging the quality of a conductor circuit formed on a silicon wafer, and this inspection device is used for the above purpose. The configuration is not particularly limited as long as it can be performed. For example, a configuration having the configuration described in the above inspection apparatus may be used.

In this probe card, as described above, the resin layer and the conductor circuit are sequentially laminated on the semi-conductive substrate. There is no displacement between the probe and the pad of the probe card. In addition, the resin layer has a lower dielectric constant than ceramic, has no propagation delay of a high-frequency signal, and can be tested even with a high-frequency signal. Even when the probe card is pressed, no damage is caused on the ceramic or the conductor circuit.

Further, by forming ground layers (mesh-like or planar conductor circuits) on the upper and lower layers of the conductor circuit constituting the signal layer, the impedance matching of the signal layer can be easily performed, and the frequency of 1 GHz or more can be obtained. Measurement becomes possible even in a high frequency band. Further, the number of pads can be increased by forming a multilayer through a resin layer.

In this probe card, it is preferable that a resin layer is formed so as to cover at least one main surface of the ceramic substrate. For example, Japanese Unexamined Patent Publication
According to Japanese Patent No. 140484, a resin layer is formed on a portion other than a peripheral edge of a ceramic substrate. In such a form, distortion or distortion occurs at a boundary between a portion where the resin layer is formed and a portion where the resin layer is not formed during heating and cooling. Therefore, a measurement test involving heating and cooling cannot be performed due to cracks or the like.

The ceramic substrate may have a through hole. By forming the through holes, the structure of the inspection apparatus as shown in FIG. 2 can be obtained, so that the area of the probe card can be made smaller than that of the silicon wafer, and the integrated circuit formed on the silicon wafer can be formed. Can be tested compartment by compartment.

The material of the ceramic plate is not particularly limited, and examples thereof include carbide ceramic, nitride ceramic, oxide ceramic and the like. Examples of the carbide ceramic include silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, and tungsten carbide. As the nitride ceramic, for example,
Examples include aluminum nitride, silicon nitride, boron nitride, and titanium nitride. Examples of the oxide ceramic include alumina, silica, zirconia, cordierite, and the like.

Of these, non-oxide ceramics such as nitride ceramics and carbide ceramics are preferred.
Of these, nitride ceramics are more preferred, and aluminum nitride is particularly preferred. This is because it has a high thermal conductivity and is excellent in temperature followability when used as a ceramic plate.

The above ceramic plate may contain a sintering aid. Examples of the sintering aid include alkali metal oxides, alkaline earth metal oxides, and rare earth oxides. Among these sintering aids, C
_{aO, Y 2 O 3, Na} 2 O, Li 2 O, Rb 2 O are preferred. The content of these is preferably 0.1 to 20% by weight. Further, it may contain alumina.

5% by weight in the non-oxide ceramic
The following oxygen may be contained. If the amount of oxygen is about 5% by weight, sintering can be promoted, withstand voltage can be secured, and the amount of warpage at high temperatures can be reduced.

The dose of α emitted from the surface of the non-oxide ceramic is desirably 50 c / cm ² · hr or less.
The optimum is 2.0 c / cm ² · hr or less. 50c / c
This is because when the value exceeds m ² · hr, a so-called soft error occurs and an error occurs in the inspection.

In the above ceramic plate, the JIS B
0601 is 0.01 μm <
It is desirable that Rmax <100 μm, and Ra is
It is preferable that 0.001 <Ra <10 μm.

The above ceramic plate has a surface roughness of JIS.
B 0601 Ra = 0.01 to 10 μm is optimal. Considering the adhesion to the conductor circuit on the surface, it is better to make it larger, but if it is too large, the skin effect (high-frequency signal currents are localized and flow on the surface of the conductor circuit)
This is because measurement at a high frequency is difficult, and when the measurement is small, a problem occurs in adhesion.

Although the shape of the ceramic plate is not particularly limited, it is preferably a rectangular parallelepiped (rectangular shape in plan view), a polygonal column shape, a disk shape, or the like.
500 mm is preferred. The thickness of the ceramic plate is 50m
m or less, more preferably 10 mm or less. If the thickness of the ceramic plate is too large, the size of the device cannot be reduced, and the heat capacity increases, the temperature rise / fall rate decreases, and the temperature matching characteristics deteriorate. Also, by reducing the thickness of the ceramic plate,
The electrical resistance of the probe card can be reduced, and the occurrence of erroneous determination can be prevented.

The flatness of the ceramic plate is -10 m in diameter.
m or 5 at the measuring distance of the longest diagonal length-10 mm
It is preferably not more than 00 μm. If the thickness exceeds 500 μm, warpage cannot be corrected even by pressing during measurement.

The thermal conductivity κ of the ceramic plate is 10 W
/ Mk <κ <300 W / mk is preferred, and 160 to
220 W / mk is more preferable. By increasing the thermal conductivity, the rate of temperature rise / fall is increased, and the temperature becomes the same as that of an object to be measured such as a silicon wafer, so that the displacement of the contactor substrate from the probe can be prevented. The volume resistivity ρ of the ceramic plate is 10 ¹³ mΩ / □ <
It is desirable that ρ <10 ¹⁶ mΩ / □. This is to prevent generation of a leak current at a high temperature and dielectric breakdown between through holes.

The Young's modulus E of the ceramic plate is 25-60.
It is desirable that 60 GPa <E <450 GPa at 0 ° C. This is for preventing the warpage of the ceramic plate at a high temperature. The bending strength σ _f of the ceramic plate is 200 at 25 to 600 ° C.
It is desirable that MPa <σ _f <500 MPa. This is to prevent the ceramic plate from being damaged when pressed. In addition, at the time of pressing, 0.1 to 10 kg / cm ² is applied to the ceramic plate.
Pressure is applied.

The porosity of the ceramic plate is desirably 5% or less. Further, it is desirable that the pore diameter of the maximum pore is 50 μm or less. This is because a withstand voltage at a temperature of 100 ° C. or more is ensured, mechanical strength is increased, and the amount of warpage at the time of pressing or the like can be reduced. In addition, the thermal conductivity is high, and the temperature rises and falls quickly, so that the temperature matching is excellent.

The maximum pore is defined by taking an image of an arbitrary 10 points with an electron microscope, selecting the largest pore in the field of view, and defining the average value of the maximum pore as the pore diameter of the maximum pore. . Further, the porosity may be 0%. Ideally, no porosity is present.

If the pore diameter exceeds 50 μm, it becomes difficult to ensure a withstand voltage characteristic at a high temperature, especially at a high temperature, and a short circuit or the like may occur. The maximum pore diameter is 10 μm
The following is desirable. This is because the amount of warpage at a high temperature (for example, 100 ° C. or higher) is reduced.

The porosity is measured by the Archimedes method. Pulverize the sintered body, put the pulverized material in an organic solvent or mercury, measure the volume, calculate the true specific gravity from the weight and volume of the pulverized material, and calculate the porosity from the true specific gravity and the apparent specific gravity .

The porosity and the maximum pore diameter can be adjusted by the pressurization time, pressure, temperature, and additives such as SiC and BN during sintering. As described above, since SiC and BN inhibit sintering, pores can be introduced. The presence of pores increases the toughness value. Therefore, the pores may be present to such an extent that the strength does not decrease so much.

When pores exist inside the ceramic plate, the pores are preferably closed pores.
Further, the amount of helium passing through the ceramic plate (helium leak amount) is desirably 10 ⁻⁷ Pa · m ³ / sec or less. This is because the use of a dense ceramic plate having a small amount of helice leakage can prevent through holes and the like formed therein from being corroded by oxygen and the like in the air.

The variation in the thickness of the ceramic plate is ± 3%
Is preferably within. This is because the surface of the ceramic plate needs to be flat in order to eliminate poor contact between the contactor substrate and the probe.

Further, the variation of the thermal conductivity is preferably within ± 10%. This is because it is possible to prevent warpage or the like due to uneven temperature or the like.

The brightness of the ceramic plate is JIS Z
It is desirable that the value based on the rule of 8721 is N4 or less. This is because a material having such lightness has a good appearance because it has concealing properties, has a large amount of radiant heat, and rapidly rises in temperature.

Here, the lightness N is set to 0 for an ideal black lightness, 10 for an ideal white lightness, and a brightness of the color between the black lightness and the white lightness. Each color is divided into ten so that the perception of the color is equal, and displayed by symbols N0 to N10. And the actual measurement is N0-N
The comparison is made with the color chart corresponding to No. 10. In this case, the first decimal place is 0 or 5.

A ceramic plate having such characteristics is
It is obtained by including 100 to 5000 ppm of carbon in a ceramic plate. There are two types of carbon, amorphous and crystalline.Amorphous carbon can suppress a decrease in the volume resistivity of a ceramic plate at a high temperature. Since the decrease in thermal conductivity at high temperatures can be suppressed, the type of carbon can be appropriately selected according to the purpose of the substrate to be manufactured.

The amorphous carbon is, for example, C, H, O
Hydrocarbons, preferably saccharides, can be obtained by calcining in air, and graphite powder can be used as the crystalline carbon.
In addition, carbon can be obtained by thermally decomposing the acrylic resin under an inert atmosphere and then heating and pressurizing. However, by changing the acid value of the acrylic resin, it is possible to obtain a crystalline (non-crystalline) material. Can be adjusted.

The probe card of the present invention usually has the configuration shown in FIGS.
The probe card has the same configuration as the probe card shown in FIG. 6, and has a through hole formed inside the ceramic plate. The through holes are formed of a high melting point metal such as tungsten or molybdenum, or a conductive ceramic such as tungsten carbide or molybdenum carbide.

The diameter of the through hole is 0.1 to 10 mm
Is desirable. This is because cracks and distortion can be prevented while preventing disconnection. The shape of the through hole is not particularly limited, and examples thereof include a columnar shape and a prismatic shape (square column, column, etc.).

In the probe card of the present invention, a conductor circuit for expanding the wiring pitch may be formed inside or on the surface of the ceramic plate so as to be parallel to the main surface of the ceramic plate. A terminal pad for connecting to the probe 32 on the substrate may be formed. By forming the conductor circuit, the width of the increase in the pitch in the resin layer can be reduced, and the formation of the conductor circuit is facilitated. Further, the conductor circuit may be formed only on one main surface of the probe card. This conductor circuit and terminal pads are also
It is desirable to use a high melting point metal such as tungsten or molybdenum, or a conductive ceramic such as tungsten carbide or molybdenum carbide.

However, depending on the case, these conductor layers may be made of a noble metal such as gold, silver or platinum or a metal such as nickel. The area resistivity of these through holes, conductor circuits, terminal pads, etc. is preferably 1 to 50 μΩ / □. When the sheet resistivity exceeds 50 μΩ / □, the inspection apparatus may make an erroneous determination due to heat generation in a through hole or the like or a voltage drop.

In order to form through holes and conductive circuits on the surface or inside of the ceramic plate, it is preferable to use a conductive paste made of metal or conductive ceramic.
That is, when forming a through-hole or a conductor circuit inside a ceramic plate, the through-hole formed in the green sheet is filled with a conductor paste, or after the above-described conductor paste layer is formed on the green sheet, the green sheet is removed. By laminating and firing, through holes and conductive circuits are formed inside.

A conductive circuit can be formed on the surface of a ceramic plate by forming a conductive paste layer on a green sheet as an uppermost layer or a lowermost layer and baking it.

On the other hand, after the ceramic plate is manufactured, the conductor paste and the terminal pads can be formed also by forming the above-mentioned conductor paste layer on the surface and baking it.

The conductive paste is not particularly limited, but preferably contains a resin, a solvent, a thickener, etc. in addition to metal particles or conductive ceramic particles in order to secure conductivity.

Examples of the material for the metal particles and the conductive ceramic particles include those described above. The particle size of these metal particles or conductive ceramic particles is 0.1 to 10
0 μm is preferred. If it is too fine, less than 0.1 μm, it is liable to be oxidized, while if it exceeds 100 μm, sintering becomes difficult and the resistance value becomes large.

Although the shape of the metal particles is spherical,
It may be scaly. When these metal particles are used, they may be a mixture of the above-mentioned spheres and the above-mentioned flakes. When the metal particles are scaly, or a mixture of spherical and scaly, it is easy to hold the metal oxide between the metal particles and ensure the adhesion between the conductor circuit and the ceramic plate. This is advantageous.

Examples of the resin used for the conductor paste include an epoxy resin and a phenol resin. Examples of the solvent include isopropyl alcohol. Examples of the thickener include cellulose and the like.

When the conductor paste layer is formed on the surface of the ceramic plate, a metal oxide is added to the conductor paste in addition to the metal particles, and the metal particles and the metal oxide are sintered. It is preferable that Thus, by sintering the metal oxide together with the metal particles, the ceramic plate and the metal particles and the like can be more closely adhered.

It is not clear why mixing the above metal oxide improves the adhesion to the ceramic plate. However, the surface of the metal plate or the surface of the ceramic plate made of non-oxide has a slight surface. It is considered that the oxide film is oxidized to form an oxide film, and the oxide films are sintered and integrated via the metal oxide, so that the metal particles and the ceramic adhere to each other. Further, when the ceramic constituting the ceramic plate is an oxide, the surface is naturally made of an oxide, so that a conductor layer having excellent adhesion is formed.

As the metal oxide, for example,
Lead, zinc oxide, silica, boron oxide (B _Two O_Three ), Al
Selected from the group consisting of Mina, Yttria and Titania
At least one is preferred. These oxides are metal
Can improve the adhesion between particles and ceramic plate
This is because that.

The ratio of the above-mentioned lead oxide, zinc oxide, silica, boron oxide (B ₂ O ₃ ), alumina, yttria, and titania is expressed in terms of a weight ratio when the total amount of the metal oxide is 100 parts by weight. 1-10, silica 1-30, boron oxide 5-50, zinc oxide 20-70, alumina 1
-10, yttria 1-50, titania 1-50, and the total is preferably adjusted so as not to exceed 100 parts by weight. By adjusting the amounts of these oxides in these ranges, the adhesion to the ceramic plate can be particularly improved.

On the ceramic plate having the above structure, a resin thin film (interlayer resin insulating layer) and a conductor circuit are sequentially laminated, and these conductor circuits are connected by via holes (hereinafter referred to as a laminated resin layer). Is formed.

The resin constituting the interlayer resin insulating layer (resin thin film) is preferably one having excellent heat resistance. Examples of such resin having excellent heat resistance include epoxy resin, polyimide resin, bismaleimide resin, and cardo resin. And the like. These are preferably sensitized. In addition, it is desirable that an epoxy resin, a polyimide resin, or the like is sensitized. Considering ease of forming a thin film, mechanical properties, adhesion to the ceramic plate 42, and the like, cardo type polymers, polyimide resins, and the like are preferable.

The cardo-type polymer is a generic name of a polymer having a structure in which a cyclic group is directly bonded to a polymer main chain. The cardo-type polymer has a structure, that is, a bulky substitution perpendicular to the main chain. Due to the presence of groups, phenomena such as rotation constraint of polymer main chain, regulation of main chain and side chain conformation, inhibition of intermolecular packing, increase of aromaticity due to introduction of aromatic substituent on side chain, etc. Occurs, which results in a high glass transition temperature after curing.

The cardo type polymer having such a structure suppresses the motility of the main chain due to its bulky substituent, and has a high crosslinking density even when cured at a temperature lower than 300 ° C. Has excellent heat resistance. Furthermore, bulky substituents inhibit molecular chain proximity and therefore have excellent solvent solubility.

The cardo type polymer is obtained by copolymerizing a cyclic compound having a carbonyl group (ketone, ester, acid anhydride, imide, etc.) with an aromatic compound such as phenol or aniline or a derivative thereof by a condensation reaction. be able to.

The photosensitive cardo-type polymer has photosensitivity among cardo-type polymers having the above-mentioned structure. Specific examples thereof include a compound represented by the following chemical formula (1). ,

[0088]

Embedded image

A compound represented by the following general formula (2):

[0090]

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(Wherein R ¹ represents oxygen, a carbonyl group, a tetrafluoroethylene group, or a single bond);
A photosensitive cardo-type polyester obtained by copolymerizing pyromellitic anhydride and at least one selected from terephthalic acid and its acid chloride is exemplified.

Further, a compound represented by the above general formula (1) and a compound represented by the following general formula (3):

[0093]

Embedded image (Wherein, R ² , R ³ , R ⁴ , and R ⁵ are the same or different and each represents hydrogen or a hydrocarbon group having 1 to 5 carbon atoms, and R ⁶ represents hydrogen, a carboxyl group, or a carbon number having 2 to 2 carbon atoms. 8
Represents an alkoxycarbonyl group. )

A photosensitive cardo type polyimide obtained by copolymerizing the compound represented by the general formula (2), pyromellitic anhydride and at least one selected from terephthalic acid and its acid chloride. And the like. Among these, a photosensitive cardo type polyimide resin is desirable. This is because even a cured product obtained by curing at a relatively low temperature has a high glass transition temperature.

The glass transition temperature of the photosensitive cardo type polymer after curing is desirably 250 to 300 ° C.
Since the glass transition temperature in the above range can be achieved by curing the photosensitive cardo type polymer at a curing temperature of about 200 ° C., it has an adverse effect on the resin substrate during the formation of the interlayer resin insulating layer (softening and melting of the resin substrate). And the like, and the formed interlayer resin insulating layer is excellent in shape retention and heat resistance.

When a laminated resin layer is formed using such a resin, for example, a photosensitive polyimide resin is applied to the manufactured ceramic plate 42, and then a via hole through hole 41 reaching the through hole 41 by exposure and development processing. After drilling the holes, it is cured by heating. Examples of the coating method include a spin coat method, a roll coater method, a dip method, a curtain coater method, and the like.The spin coat method is used because a film having a uniform thickness can be formed relatively easily. preferable.

Further, by forming the resin layer twice, it is possible to more reliably prevent the occurrence of pinholes. The via hole may be formed by irradiating a laser beam.

Further, before forming the resin layer on the ceramic plate, a conductor circuit may be formed on the surface of the ceramic plate. This is because by forming the conductor circuit on the surface of the ceramic plate, it is possible to increase the interval between the wirings formed on the other main surface.

After the conductor layer is formed on the interlayer resin insulating layer having the through hole for the via hole formed through the above steps, etching is performed, for example, to form the via hole 46, as shown in FIG. The conductor circuit 48 is formed. The material of the conductor circuit 48 is not particularly limited as long as it has high electric conductivity, and examples thereof include copper, chromium, nickel, zinc, gold, silver, tin, and iron. Copper which is relatively easy to plating and can form a circuit having high electric conductivity is preferable.

Before the formation of the conductor layer on the interlayer resin insulation layer, it is preferable to perform a modification treatment on the surface of the interlayer resin insulation layer in order to ensure the adhesion between the interlayer resin insulation layer and the conductor layer. Examples of a method for modifying the interlayer resin insulating layer include a method of performing plasma etching using oxygen plasma or the like, a method of utilizing corona discharge, and the like. For example, by performing a plasma treatment, hydroxyl groups are formed on the surface,
The adhesion is improved.

Thereafter, a conductor circuit is formed on the interlayer resin insulating layer. In this case, a so-called solid conductor layer is formed on the entire interlayer resin insulating layer, and then an etching resist is formed thereon. The conductor circuit can be formed by forming and then performing etching.

Examples of a method for forming such a solid conductor circuit include plating methods such as electroless plating and electrolytic plating, and methods such as sputtering, vapor deposition, and CVD. Among these, the sputtering method is preferred. The plating method is preferred. Further, a sputtering method and a plating method may be used in combination. This is because a conductive layer having excellent adhesion can be formed on the surface of the interlayer resin insulating layer by a sputtering method, and a relatively thick conductive layer can be formed by electrolytic plating.

By repeating the above process a plurality of times, an interlayer resin insulating layer and a conductor circuit are sequentially laminated, and a laminated resin layer in which these conductor circuits are connected by via holes can be formed. Then, by forming a through hole in the uppermost resin layer, a part of the conductor circuit is exposed, and the contactor substrate 50 disposed thereunder is exposed.
To be able to contact the probe. Note that the conductor circuit may be exposed as it is without forming a resin layer on the conductor circuit.

Next, a method for manufacturing the probe card of the present invention will be described with reference to FIG. In addition, as a method of manufacturing the ceramic plate constituting the probe card, another manufacturing method is conceivable. (1) Green Sheet Preparation Step First, a paste is prepared by mixing a powder of a nitride ceramic or an oxide ceramic with a binder, a solvent, or the like, and a green sheet is prepared using the paste. Aluminum nitride or the like can be used as the above-mentioned ceramic powder, and a sintering aid such as yttria may be added as necessary. Further, when producing a green sheet, crystalline or amorphous carbon may be added.

The binder is preferably at least one selected from an acrylic binder, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol.
Further, as the solvent, at least one selected from α-terpineol and glycol is desirable.

The paste obtained by mixing these is formed into a sheet by a doctor blade method to form a green sheet 4.
00 is produced. The thickness of the green sheet 400 is 0.
1-5 mm is preferred. Next, a portion to be a through hole for forming a through hole is formed in the obtained green sheet as necessary. The above processing may be performed after forming a green sheet laminate described later.

(2) Step of Printing Conductive Paste on Green Sheet The conductive paste is filled into a portion to be a through hole to form a filling layer 410. If necessary, a conductive paste layer 420 serving as a pad is formed by using the above-described conductive paste in a portion of the lowermost green sheet where a filling layer for through holes is formed. The layer serving as a pad may be formed by sputtering or the like after manufacturing a ceramic plate.

When a conductor circuit is formed inside, a conductor paste layer may be formed on a green sheet serving as an inner layer.

[0109] These conductive pastes contain metal particles or conductive ceramic particles. The material of the metal particles includes, for example, tungsten or molybdenum, and the conductive ceramic includes, for example, tungsten carbide or molybdenum carbide.

The average particle diameter of the metal particles such as tungsten particles or molybdenum particles is preferably 0.1 to 5 μm. Average particles less than 0.1 μm or 5 μm
This is because when the value exceeds the above, it is difficult to print the conductor paste.

Examples of such a conductive paste include metal particles or conductive ceramic particles of 85 to 87 parts by weight; at least one kind of binder selected from acrylic, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol of 1.5 to 10 parts by weight. And a composition (paste) obtained by mixing 1.5 to 10 parts by weight of at least one solvent selected from α-terpineol and glycol.

(3) Green Sheet Laminating Step Next, a plurality of the green sheets 400 are laminated and pressed to produce a laminated body (see FIG. 8A).

(4) Green Sheet Laminate Firing Step Next, the green sheet laminate is heated and pressurized to sinter the green sheet 400 and metals and the like in the internal and external conductor pastes to form the through holes 41. Then, a ceramic plate 42 having the same is manufactured. Heating temperature is 1000-200
0 ° C. is preferable, and the pressure for pressurization is preferably 10 to 20 MPa. Heating is performed in an inert gas atmosphere. As the inert gas, for example, argon, nitrogen, or the like can be used.

(5) Next, titanium, molybdenum, nickel,
A conductor layer is provided by sputtering, plating, or the like of a metal such as chromium, and an etching resist is formed by photolithography. Next, a part of the conductor layer is dissolved with an etchant, and the etching resist is peeled off to form a conductor circuit 43 (see FIG. 8B). The thickness of the conductor circuit 43 is preferably 1 to 10 μm. A non-oxidizing metal layer (not shown) such as a nickel or noble metal (gold, platinum, silver, palladium) layer may be provided by electroless plating on the surface of the conductor circuit 43 on which the resin layer is not formed. desirable. The thickness of the non-oxidizable metal layer is preferably 1 to 10 μm.

(6) An interlayer resin insulation layer 44 is formed on at least one surface (see FIG. 8C). The resin is preferably a photosensitive resin, and is preferably an acrylated epoxy resin or an acrylated polyimide resin. The interlayer resin insulation layer 44 may be formed by laminating a resin film or by spin-coating a liquid resin.

(7) After forming the resin layer, it is dried by heating, and then exposed and developed to form an opening. Further, the resin liquid is spin-coated again, dried by heating, and then exposed and developed to form an opening. The reason why one interlayer resin insulating layer 44 is formed twice in this manner is that even if a pinhole is formed in one of the resin layers, the other resin layer ensures insulation. Because you can do it. Note that a resin may be filled between the conductor circuits formed on the surface of the ceramic plate so as to eliminate unevenness due to the conductor circuits and to flatten them. Further, the opening may be provided by laser light.

(8) Next, the surface of the resin layer is modified by an oxygen plasma treatment or the like. Since a hydroxyl group is formed on the surface, adhesion to a metal is improved. Then chrome,
Perform sputtering of copper or the like. The thickness of the sputtering layer is preferably from 0.1 to 5 μm. Next, a plating resist is formed by photolithography, and Cu and Ni layers are formed by electrolytic plating. The thickness is desirably 2 to 10 μm. Thereafter, by removing the plating resist and performing etching, the conductor layer under the plating resist is dissolved and removed, and the conductor circuit 4 having the via hole 46 is removed.
8 (see FIG. 8D).

Thereafter, the steps (6) to (8) are repeated to form the interlayer resin insulating layers 44, 144, 244, 49 and the conductor circuits 48, 148,
248 (including via holes 46, 146, and 246) is manufactured as a probe card in which a plurality of layers are formed (see FIG. 8E). When a conductor circuit and a resin layer are formed on a ceramic plate, the conductor circuit (resin layer) to be formed
May be a single layer or two or more layers as shown in FIG.

The via hole 4 shown in FIG.
In FIG. 6, the conductor layer is formed with substantially the same thickness along the via hole opening. However, the inside of the via hole opening is substantially filled with metal, and the upper surface of the via hole 46 is A so-called field via having a flat shape at substantially the same level may be formed.

Further, when manufacturing a ceramic plate, in addition to the above-described manufacturing method, the following manufacturing method (hereinafter, referred to as the following) is used.
Production method B). That is,

(1) A slurry is prepared by blending a sintering aid such as yttria, a binder and the like with the above-mentioned nitride ceramic or carbide ceramic powder, if necessary.
This slurry is granulated by a method such as spray drying,
The granules are placed in a mold or the like and pressurized to form a plate or the like, thereby producing a green body (green). next,
The formed body is calcined at a temperature of 600 to 1600 ° C., and a through hole to be a through hole is formed by a drill or the like.

(2) Step of Printing Conductive Paste on Substrate The conductive paste is generally a high-viscosity fluid composed of metal particles or conductive paste or a mixture thereof, a resin, and a solvent. This conductor paste is printed on conductor circuits and through-hole portions by screen printing or the like to form conductor paste layers and through-holes. The conductor circuit may be formed after the sintering step (3) described below is completed.

(3) Next, the calcined body is heated, fired and sintered to produce a ceramic plate. After this,
By processing into a predetermined shape, a substrate is produced,
The shape may be such that it can be used as it is after firing. By performing heating and baking while applying pressure, a substrate without pores can be manufactured. Heating and firing
The temperature is not less than the sintering temperature, but is 1000 to 2500 ° C. for nitride ceramic or carbide ceramic.

[0124]

EXAMPLES Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

(Example 1) Production of probe card (see FIG. 8) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm), yttria (Y ₂ O)
₃ , average particle size: 0.4 μm) A doctor was prepared by using a paste obtained by mixing 4 parts by weight of an acrylic binder, 11.5 parts by weight of an acrylic binder, 0.5 parts by weight of a dispersant, and 53 parts by weight of an alcohol composed of 1-butanol and ethanol. The green sheet 400 having a thickness of 0.47 mm is formed by a blade method.
Was prepared.

(2) Next, after drying the green sheet 400 at 80 ° C. for 5 hours, a through-hole or the like serving as a through-hole 41 was formed by punching.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, acrylic binder 3.0
By weight, 3.5 parts by weight of the α-terpineol solvent and 0.3 parts by weight of the dispersant were mixed to prepare a conductor paste A.

Tungsten particles 10 having an average particle size of 3 μm
A conductive paste B was prepared by mixing 0 parts by weight, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant.

Then, a portion serving as a through hole was filled with conductive paste B to form a filling layer 410. 27 sheets of the green sheet 400 after the above processing are
Lamination and pressure bonding were performed at a temperature of 8 ° C. and a pressure of 8 MPa (see FIG. 8A).

(4) Next, the obtained laminate was degreased in nitrogen gas at 600 ° C. for 5 hours, and at 1890 ° C. under a pressure of 15 M
Hot pressing was performed for 10 hours at Pa to obtain a 5 mm-thick aluminum nitride sintered body. This was cut into a square having a side of 60 mm to obtain a ceramic plate 42 having a cylindrical through hole 41 with a diameter of 200 μm inside.

(5) A sputtering device (CFS-RP-10 manufactured by Tokuda Seisakusho Co., Ltd.) is provided on both surfaces of the ceramic plate 42.
0), Ti having a thickness of 0.1 μm and M having a thickness of 2.0 μm
o, Ni of 1.0 μm was sputtered in this order. Further, a resist was laminated, and then exposed and developed to obtain an etching resist. HF / HN at 55 ° C
Etching with O ₃ aqueous solution, Ti layer, Mo layer, Ni layer
A conductor circuit 43 composed of layers was formed (see FIG. 8B).

(6) The ceramic plate 42 is heated at 120 ° C. for 30 minutes.
Heat treatment before application for minutes. Next, a photosensitive polyimide (I-8802B manufactured by Asahi Kasei Corporation) is applied to the entire surface by a spin coater, dried by heating at 80 ° C. for 20 minutes, and then cured by heating at 350 ° C. to form a polyimide layer. The surface was smoothed without unevenness.

(7) Further, a photosensitive polyimide (I-8802B manufactured by Asahi Kasei) was applied by a spin coater,
And dried by heating at 20 mJ for 20 minutes. A mask is laminated and exposed at 200 mJ.
MDG). Further, it was heated at 350 ° C. and post-baked to be cured.

(8) The same processing as in the step (7) is performed.
Interlayer resin insulation layer 44 of polyimide having a thickness of 10 μm
(Hereinafter, referred to as a polyimide layer) (FIG. 8C).
reference). A via hole opening having a diameter of 100 μm was formed in the polyimide layer 44. (9) The surface of the polyimide layer was subjected to oxygen plasma treatment. Further, the surface was washed with 10% sulfuric acid.

(10) Then, a Cr layer having a thickness of 0.1 μm and a copper layer having a thickness of 0.5 μm were formed in this order by the above-described sputtering apparatus. (11) Next, a resist film was laminated, exposed and developed to form a plating resist.

(12) Further, 80 g / l copper sulfate and 18 g
Electrolytic copper plating bath consisting of 0 g / l sulfuric acid and 100 g / l
Using an electrolytic nickel bath containing 1 l of nickel sulfamate, electrolytic plating was performed at a current density of 1 A / dm ² to form a conductor having a thickness of 5.5 μm of copper and a thickness of 1 μm of Ni.

(13) Further remove the plating resist,
The Cr and Cu layers are removed with an aqueous solution of hydrochloric acid / water = 2/1 (40 ° C.), and a conductor circuit 48 including via holes 46 (FIG. 8)
(D)).

Further, by repeating the above steps (6) to (13), the upper polyimide layers 144 and 244 are formed.
Is formed thereon, and conductor circuits 148 and 248 including via holes 146 and 246 are formed thereon.
Was formed (see FIG. 8E).

(14) The resin surface is coated with an adhesive.
After masking with film, nickel chloride 2.31 × 10^-2
mol / l, sodium hypophosphite 2.84 × 10^-2m
ol / l, sodium citrate 1.55 × 10^-2mol
/ L electroless nickel plating bath having a pH of 4.5,
7.61 x 10 potassium gold cyanide^-3mol / l, chloride
Ammonium 1.87 × 10^-1mol / l, sodium citrate
Thorium 1.16 × 10 ^-1mol / l, sodium hypophosphite
Lium 1.70 × 10^-1Gold plating bath consisting of mol / l
Using a 5 μm thick Ni layer and a 0.1 μm thick layer, respectively.
Non-oxidizing metal film consisting of a 03 μm Au layer (not shown)
Was formed. This probe card has a first layer and a third layer
It is a ground layer, and the second layer is a signal layer.

(Example 2) Manufacture of probe card (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), 4 parts by weight of yttria (Y ₂ O ₃ average particle size 0.4 μm) A composition comprising 12 parts by weight of an acrylic resin binder and alcohol was spray-dried to prepare a granular powder.

(2) Next, this granular powder was placed in a mold and molded into a flat plate to obtain a formed product (green). This formed body is calcined at 1400 ° C., and a through-hole for a through-hole is formed in the processed body by drilling.
The inside thereof was filled with the conductive paste B used in Example 1. (3) A square having a side of 60 mm was cut out from the molded body that had undergone the above steps, and a ceramic plate having a cylindrical through-hole having a diameter of 200 μm was obtained.

(4) A sputtering device (CFS-RP-10 manufactured by Tokuda Seisakusho) is provided on both surfaces of the ceramic plate.
0), Ti having a thickness of 0.1 μm and M having a thickness of 2.0 μm
o, Ni of 1.0 μm was sputtered in this order. Further, a resist was laminated, and then exposed and developed to obtain an etching resist. HF / HN at 55 ° C
Etching with O ₃ aqueous solution, Ti layer, Mo layer, Ni layer
A conductor circuit composed of layers was formed.

(5) Next, a solution of a photosensitive cardo type polymer whose viscosity was previously adjusted to 30 Pa · s was applied to the entire surface of the ceramic plate by spin coating, and then the temperature was set to 150 ° C. For 20 minutes to form a resin layer consisting of a semi-cured film of a photosensitive cardo type polymer.

The photosensitive cardo type polymer used here was bis-phenolfluorene-hydroxyacrylate represented by the above chemical formula (1) and the above-mentioned general formula (3)
A random copolymer obtained by reacting bis-aniline-fluorene in which R ² , R ³ , R ⁴ , R ⁵ and R ⁶ are hydrogen with pyromellitic anhydride at a molar ratio of 1: 4: 5. It is a polymer.

Next, a photo-etching mask in which a black circle was drawn in a portion corresponding to the via hole opening was used.
After being placed on the resin layer 440 made of the photosensitive cardo type polymer, it was exposed and developed by irradiating ultraviolet rays at 400 mj / cm ² to form a via hole opening. After that, main curing was performed at 250 ° C. for 120 minutes to form an interlayer resin insulating layer. In addition,
The thickness of the interlayer resin insulating layer formed here was 10 μm. The glass transition temperature of the interlayer resin insulating layer is 26
It was 0 ° C. Thereafter, the surface of the interlayer resin insulating layer was subjected to oxygen plasma treatment. Further, the surface was washed with 10% sulfuric acid.

(6) Next, a Cr layer having a thickness of 0.1 μm and a copper layer having a thickness of 0.5 μm were formed in this order by the above-described sputtering apparatus. Next, a resist film was laminated, exposed and developed to form a plating resist.

(7) Next, using the thin film conductor layer as a plating lead, electrolytic copper plating was performed under the following conditions, and an electrolytic copper plating layer was formed on the portion where the plating resist was not formed.

[0148] [Electroplating conditions] Current density 1A / dm ² hours 65 minutes Temperature 22 ° C ± 2 ° C

(8) Further, a current density of 1 was obtained by using an electrolytic nickel bath containing 100 g / l of nickel sulfamate.
A / dm ² electrolytic plating, copper thickness 5.5 μm,
A conductor having a thickness of 1 μm of Ni was formed.

(9) Further, the plating resist was removed, and the Cr and Cu layers were removed with an aqueous solution of hydrochloric acid / water = 2/1 (40 ° C.) to form a conductor circuit including terminal pads (50 μm square) and via holes. did.

(10) Next, by repeating the steps described in the above (5) to (9), a further upper interlayer resin insulating layer and a conductor circuit (including a via hole) are formed. By repeating the process described in the above (5), the uppermost resin layer having an opening was formed.

(13) Next, after masking the resin surface with a film coated with an adhesive, nickel chloride 2.31 ×
10 ^-2 mol / l, sodium hypophosphite 2.84 × 1
0 ^-2 mol / l, sodium citrate 1.55 × 10 ^-2
mol / l electroless nickel plating bath of pH = 4.5, potassium potassium cyanide 7.61 × 10 ⁻³ mol /
, 1.87 × 10 ^-1 mol / l ammonium chloride, 1.16 × 10 ^-1 mol / l sodium citrate, and 1.70 × 10 ^-1 mol / l sodium hypophosphite. A non-oxidizable metal film (not shown) made of a Ni layer having a thickness of 5 μm and an Au layer having a thickness of 0.03 μm was formed, thereby obtaining a probe card. In this probe card, the first and third layers are ground layers, and the second layer is a signal layer.

Example 3 (1) 100 parts by weight of SiC powder (average particle diameter: 0.5 μm), 0.5 parts by weight of C (average particle diameter: 0.4 μm), 12 parts by weight of an acrylic resin binder, and alcohol Was spray-dried to produce a granular powder. (2) The granular powder was placed in a mold and formed into a disk to obtain a formed product (green). 1900 ° C
At 20 MPa to obtain a ceramic substrate having a diameter of 310 mm. Next, a glass paste (G-5177 manufactured by Shoei Chemical Industry Co., Ltd.) was applied to the surface, and baked at 700 ° C. to provide a coat layer having a thickness of 2 μm on the surface.

(3) A sputtering device (CFS-RP-10 manufactured by Tokuda Seisakusho Co., Ltd.) is provided on both surfaces of the ceramic plate.
0), Ti having a thickness of 0.1 μm and M having a thickness of 2.0 μm
o, Ni of 1.0 μm was sputtered in this order. Further, a resist was laminated, and then exposed and developed to obtain an etching resist. HF / HN at 55 ° C
Etching with O ₃ aqueous solution, Ti layer, Mo layer, Ni layer
A conductor circuit composed of layers was formed.

(4) Next, a solution of a photosensitive cardo type polymer whose viscosity was previously adjusted to 30 Pa · s was applied to the entire surface of the ceramic plate by spin coating, and then heated to 150 ° C. For 20 minutes to form a resin layer consisting of a semi-cured film of a photosensitive cardo type polymer. In addition, the photosensitive cardo type polymer used here is the bis-phenolfluorene-hydroxyacrylate represented by the chemical formula (1) and the general formula (3).
Bis- wherein R ² , R ³ , R ⁴ , R ⁵ and R ⁶ are hydrogen
It is a random copolymer obtained by reacting aniline-fluorene with pyromellitic anhydride at a molar ratio of 1: 4: 5.

(5) Next, a photo-etching mask in which a black circle is drawn in a portion corresponding to the opening for the via hole is applied to the resin layer 44 made of the photosensitive cardo type polymer.
After being placed on the substrate 0, the substrate was exposed to ultraviolet light under the conditions of 400 mj / cm ² to perform exposure / development processing to form a via hole opening. After that, main curing was performed at 250 ° C. for 120 minutes to form an interlayer resin insulating layer.
The thickness of the interlayer resin insulating layer formed here was 10 μm.
m. The glass transition temperature of the interlayer resin insulating layer was 260 ° C. Thereafter, the surface of the interlayer resin insulating layer was subjected to oxygen plasma treatment. Further, the surface was washed with 10% sulfuric acid.

(6) Next, a Cr layer having a thickness of 0.1 μm and a copper layer having a thickness of 0.5 μm were formed in this order by the above-described sputtering apparatus. Next, a resist film was laminated, exposed and developed to form a plating resist.

(7) Next, electrolytic copper plating was performed using the thin film conductor layer as a plating lead under the following conditions, and an electrolytic copper plating layer was formed on the portion where the plating resist was not formed. [Electroplating conditions] Current density 1A / dm ² hours 65 minutes Temperature 22 ° C ± 2 ° C

(8) Further, using an electrolytic nickel bath containing 100 g / l of nickel sulfamate, a current density of 1
A / dm ² electrolytic plating, copper thickness 5.5 μm,
A conductor having a thickness of 1 μm of Ni was formed. (9) Further, the plating resist is removed, and hydrochloric acid / water = 2 /
The Cr and Cu layers were removed with an aqueous solution of 1 (40 ° C.) to obtain a conductor circuit including terminal pads (50 μm square) and via holes.

(10) Next, by repeating the steps described in the above (5) to (9), an upper interlayer resin insulating layer and a conductor circuit (including a via hole) are further formed. By repeating the process described in the above (5), the uppermost resin layer having an opening was formed. (11) Next, after masking the resin surface with a film coated with an adhesive, nickel chloride is 2.31 × 10 ⁻² mol.
/ L, sodium hypophosphite 2.84 × 10 ^-2 mol /
l, sodium citrate 1.55 × 10 ⁻² mol / l, electroless nickel plating bath of pH = 4.5, potassium gold cyanide 7.61 × 10 ⁻³ mol / l, ammonium chloride 1.87 × Using a gold plating bath composed of 10 ^-1 mol / l, sodium citrate 1.16 × 10 ^-1 mol / l, and sodium hypophosphite 1.70 × 10 ^-1 mol / l, each having a thickness of 5 μm. Ni layer and thickness 0.03μ
A non-oxidizable metal film (not shown) composed of m Au layers was formed to obtain a probe card.

(12) Further, photosensitive polyimide was further coated on the conductor circuit including the pad, and exposed and developed to expose the pad portion, thereby obtaining a probe card. In this probe card, the first and third layers are ground layers, and the second layer is a signal layer.

Test Example 1 100 parts by weight of alumina powder (average particle diameter 1.0 μm), acrylic binder 11.5
A green sheet 400 having a thickness of 0.47 mm is prepared by using a paste obtained by mixing 0.5 parts by weight of a dispersant and 53 parts by weight of an alcohol composed of 1-butanol and ethanol by a doctor blade method. Then, the green sheet was laminated and fired at 1600 ° C. to produce a ceramic plate having through holes, and further, except that the photosensitive polyimide was printed except for the outer periphery of the substrate, in the same manner as in Example 1, A probe card was manufactured.

Comparative Example 1 (1) 100 parts by weight of alumina powder (average particle size: 1.0 μm), 11.5 parts by weight of an acrylic binder, 0.5 of a dispersant
Using a paste obtained by mixing 53 parts by weight of alcohol consisting of 1 part by weight and 1-butanol and ethanol, molding was performed by a doctor blade method to produce a green sheet 400 having a thickness of 0.47 mm, and the green sheets were laminated. Thereafter, by firing at 1600 ° C., a ceramic plate having through holes was manufactured.

(2) A sputtering device (CFS-RP-10 manufactured by Tokuda Seisakusho Co., Ltd.) is provided on both surfaces of the ceramic plate.
0), Ti having a thickness of 0.1 μm and M having a thickness of 2.0 μm
o, Ni of 1.0 μm was sputtered in this order. Further, a resist was laminated, and then exposed and developed to obtain an etching resist. HF / HN at 55 ° C
Etching with O ₃ aqueous solution, Ti layer, Mo layer, Ni layer
A conductor circuit composed of layers was formed.

The probe cards according to Examples 1 to 3 and Test Example 1 and Comparative Example 1 were set in the inspection apparatus shown in FIG. 1, and 100 silicon wafers which were previously determined to be acceptable were used. After the temperature of the silicon wafer was raised to 150 ° C., the process of cooling to −50 ° C. was repeated, and the operation state of the integrated circuit formed on the silicon wafer was inspected.

In the inspection apparatus using the probe card according to the first to third embodiments, all the products were judged to be acceptable in 100 inspections even at a high or low temperature, and even at a high or low temperature, It was demonstrated that the contact between the probe 52 of the contactor substrate 50 and the exposed conductor circuit 248 of the probe card 40 was good. Therefore, the interlayer resin insulating layer formed on the ceramic plate 42
It is presumed that expansion and contraction are repeated at the same ratio with the thermal expansion and contraction of No. 2.

On the other hand, in the probe cards according to Test Example 1 and Comparative Example 1, it was determined that the product was a rejected product, and it was found that the probability that the inspection apparatus made an incorrect determination at a high temperature was high. This is because alumina has a large thermal expansion coefficient.
It is considered that the contact between the probe 52 of the contactor substrate 50 and the exposed conductor circuit of the probe card becomes poor at high or low temperature.

The probe card is warped, which is presumed to be one of the causes of poor contact. It is presumed that the cause of the warpage is that the resin layer is not formed on the entire surface of the ceramic substrate. Furthermore, when tests were performed with respect to Examples 1 to 3, Test Example 1, and Comparative Example 1 using signals in a high-frequency band of 150 ° C. and 1 GHz, Examples 1 to 3 could be determined without any problem. In Comparative Example 1, measurement was not possible due to distortion of the signal waveform.

[0169]

As described above, according to the present invention,
Since the probe card is formed by laminating a resin thin film on a ceramic plate, it has a thermal expansion coefficient equal to that of a silicon wafer. Therefore, when the silicon wafer is heated and cooled, the probe card is thermally contracted in the same manner as the silicon wafer. Can be. Further, since the number of pads can be increased and impedance matching can be easily achieved, a test with a high-frequency signal can be performed.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing a first embodiment of a first inspection device of the present invention.

FIG. 2 is a cross-sectional view of a probe board, a probe card, and a contactor board.

FIG. 3 is an enlarged sectional view of a probe board, a probe card, and a contactor board.

FIG. 4 is an enlarged sectional view of a probe board, a probe card, and a contactor board.

FIG. 5 is an enlarged sectional view of a probe board, a probe card, and a contactor board according to a modification of the first embodiment in the first inspection apparatus.

FIG. 6 is an enlarged sectional view of a probe board, a probe card, and a contactor board according to a modification of the second embodiment in the first inspection device of the present invention.

FIG. 7 is an explanatory diagram showing an embodiment in a second inspection device of the present invention.

FIGS. 8A to 8E are cross-sectional views showing a part of the process of manufacturing the probe card of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Inspection apparatus 20 Tester 24 Performance board 30 Probe 40 Probe card 41 Through hole 42 Ceramic plate 43 Terminal pad 44, 144, 244 Interlayer resin insulation layer 46, 146, 146 Via hole 48, 148, 248 Conductor circuit 50 Contactor board 52 Probe 60 silicon wafer 62 pad

Claims (12)

[Claims] 1. An inspection apparatus comprising: a performance board on which an inspection terminal is arranged; a contactor board on which a probe that contacts an object to be inspected is arranged; and a probe card, wherein the probe card comprises: An inspection apparatus characterized in that the inspection apparatus is a multilayer substrate formed by laminating a resin thin film on a ceramic plate. 2. A performance board on which a terminal for inspection is provided, a contactor board on which a probe for contacting an object to be inspected is provided, and a probe on the contactor board and a terminal on the performance board An inspection device comprising an intervening probe card, wherein the probe card is a multilayer substrate formed by laminating a resin thin film on a ceramic plate. 3. A performance board provided with terminals for inspection, a contactor board provided with probes for contacting an object to be inspected, and a probe card electrically connected to the probes of the contactor board. An inspection apparatus configured to arrange an object to be inspected between the performance substrate and the probe card, wherein the probe card is a multilayer substrate formed by laminating a resin thin film on a ceramic plate. Inspection equipment characterized. 4. A ceramic plate of the probe card,
2. A non-oxide ceramic material.
4. The inspection apparatus according to any one of items 1 to 3, 5. The inspection apparatus according to claim 1, wherein the resin thin film is made of a thermosetting resin. 6. A probe card used for inspecting an integrated circuit formed on a semiconductor wafer, wherein a resin layer and a conductor circuit are sequentially laminated on a ceramic plate. card. 7. The probe card according to claim 6, wherein a through hole is formed in the ceramic plate. 8. The probe card according to claim 6, wherein the conductor circuits formed via the resin layer are connected by via holes. 9. The method according to claim 6, wherein the ceramic plate is made of a non-oxide ceramic.
The probe card according to 1. 10. The probe card according to claim 6, wherein the resin layer is made of a thermosetting resin. 11. The probe card according to claim 6, wherein the ceramic substrate has a disk shape. 12. The probe card according to claim 6, wherein a resin layer is formed so as to cover at least one main surface of the ceramic substrate.