JP2002257895A - Probe card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a probe card wherein corrosion does not occur on a through-hole in the probe card even when it has been used for a long time, it is superior in a mechanical strength at a normal or high temperature, defective contact to a probe, warpage or deformation does not occur even in a high temperature, and temperature matching is fast. SOLUTION: There is disclosed the probe card which is used for inspection of an integrated circuit formed on a semiconductor wafer. The probe card consists of a ceramic substrate made of non-oxide ceramic. The ceramic substrate has a leakage quantity not greater than 10<-7> Pa/m<3> /sec (He) measured by a helium leak detector.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a probe card used to determine whether an integrated circuit or the like formed on a silicon wafer or the like operates normally.

[0002]

2. Description of the Related Art A semiconductor chip (semiconductor element) is prepared by slicing an ingot of a silicon single crystal or the like formed using a single crystal pulling apparatus into thin slices to produce a semiconductor wafer. Is manufactured through a process of forming an integrated circuit consisting of

In the manufacturing process of the semiconductor chip,
After forming an integrated circuit composed of a large number of units on a semiconductor wafer, it is necessary to check whether or not these circuits operate normally before dividing into semiconductor elements (semiconductor chips) of each unit. Therefore, for such an inspection, an inspection device is used in which a needle-like metal called a probe is pressed against a terminal pad of a silicon wafer to flow an electric current, and the continuity of the integrated circuit and the insulation between the circuits are checked. .

At present, as the degree of integration of semiconductor elements increases, the degree of integration of circuits formed on silicon wafers increases, and the pitch of terminal pads formed on semiconductor elements decreases.
Therefore, it is necessary to narrow the interval between the probes used in the inspection apparatus, and the head (performance substrate) of the inspection apparatus
In addition, it is difficult to directly attach the probe. In order to cope with such a problem, recently, an inspection apparatus has been used in which a relay board (probe card) is interposed and a contactor board on which a probe is provided is attached to a head (performance board).

In the above inspection apparatus, the probe card used as the relay board is made of a multilayer resin substrate or an alumina ceramic substrate, and serves to connect the wide pitch terminals of the performance board to the narrow pitch probes of the contactor board. (Patent No. 279607)
No. 0).

[0006]

At present, when inspecting an integrated circuit formed on a silicon wafer, not only an operation state at normal temperature but also an operation state at a high temperature of 100 ° C. or higher is required. And presses the probe against terminal pads on the silicon wafer with considerable pressure.
However, the strength of the probe card made of the above-described resin substrate or alumina ceramic substrate at room temperature cannot be said to be sufficient, and the strength is greatly reduced at a high temperature. For this reason, there is a problem that deformation such as warpage or undulation occurs in the probe card itself, and accurate inspection cannot be performed.

[0007] Further, since the resin substrate or the alumina ceramic substrate has a large coefficient of thermal expansion, when the temperature rises, the contact position with the probe is displaced or warped, and poor contact with the probe occurs. In some cases, an error occurred in the inspection. In addition, since the resin substrate and the alumina ceramic substrate have low thermal conductivity, the temperature cannot be raised or lowered quickly, so that an efficient inspection cannot be performed.

Further, in addition to such a problem, in particular, in the case of an alumina ceramic substrate, there are cases where open pores exist inside the substrate. In this case, the circuit and the like formed inside the alumina ceramic substrate are corroded by oxygen and the like in the air, so that the probe card has poor durability.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to prevent the internal through holes and the like from being corroded even when used for a long period of time. An object of the present invention is to provide a probe card which is excellent in mechanical strength at a lower temperature, does not cause poor contact with a probe, warping, deformation, and the like even at high temperatures, and has a high temperature matching.

[0010]

In order to achieve the above object,
Therefore, the probe card of the present invention is formed on a semiconductor wafer.
Probe card used for testing integrated circuits
Consists of a ceramic substrate made of non-oxide ceramic,
The ceramic substrate is mounted on a helium leak detector.
10 in the measurement^-7Pa ・ m ^Three / Sec (He) or less
It is characterized in that the

As a preferred embodiment of the probe card of the present invention, a through hole is formed inside and a conductor circuit is formed on one principal surface. However, in the present invention, as long as a conductor circuit is formed on one main surface, it is not always necessary to form a through hole inside. This is because a conductor circuit for making contact with a probe for inspection and a conductor circuit for connecting to a performance board or the like may be formed on one principal surface in some cases. In the present invention, the conductor circuit does not necessarily have to be formed on one main surface as long as a through hole is formed inside.

Since the probe card of the present invention is made of a ceramic substrate made of a non-oxide ceramic such as a carbide ceramic or a nitride ceramic, it has excellent mechanical properties (strength) at room temperature and high temperature, and warps and deforms even at high temperature. Absent. Therefore, the contact position with the probe does not shift or the contact failure with the probe does not occur.

Further, since the ceramic substrate has a small coefficient of thermal expansion and is not much different from a silicon wafer or the like, the contact position with the probe does not shift at a high temperature.
Further, since the ceramic substrate has a high thermal conductivity, temperature matching is fast, and the ceramic substrate can quickly follow a temperature change of the silicon wafer.

The non-oxide ceramic ceramic substrate constituting the probe card of the present invention has a density of 10 ⁻⁷ Pa · m ³ / s measured by a helium leak detector.
Since the leak amount is ec (He) or less, a circuit or the like formed inside the ceramic substrate does not come into contact with oxygen or the like in the air. Therefore, the probe card has excellent durability without corrosion of the circuit and the like.

The probe card is disclosed in Japanese Unexamined Patent Publication No.
JP-A-140484 and JP-A-4-152270 disclose ceramic probe cards, but do not disclose (disclose) what kind of ceramic is used, and refer to JP-A-7-98380. Although the gazette discloses a probe card composed of a glass epoxy substrate and an aluminum nitride support plate, probing is performed only on the glass epoxy substrate, and aluminum nitride only functions as a support. And a non-oxide ceramic substrate such as a nitride ceramic, and 10 ⁻⁷ Pa · m ^{3 as} measured by a helium leak detector.
It should be noted that the patentability of the present invention is not largely determined by these known documents, which is completely different from the present invention in which the leak amount is not more than / sec (He).

In the probe card, it is preferable that the ceramic substrate has at least a through hole formed therein. Head (performance board) with the same inspection pitch at the probe
This is because it may be connected to

In the probe card, it is preferable that a conductive circuit is formed on one main surface of the ceramic substrate. This is for expanding the inspection pitch in the probe and connecting it to the head (performance board).

In order to increase the inspection pitch, it is preferable to provide a conductor circuit for increasing the probe pitch on the surface of the ceramic substrate as shown in FIG. A conductor circuit for expanding the probe pitch may be provided inside. Also,
The probe card of the present invention is desirably used at 100 ° C. or higher.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a probe card according to the present invention will be described with reference to the drawings. FIG. 1 is a conceptual diagram schematically showing a semiconductor wafer inspection apparatus using a probe card of the present invention, and FIG. 2A is a cross-sectional view schematically showing a probe card of the present invention. (B) is a plan view thereof.

The inspection apparatus 10 includes a performance board 24 on which terminals for inspection are provided, and a lifting / lowering apparatus 22 for adjusting the position of the performance board 24 in the X, Y, and Z directions.
And the silicon wafer 60 through the performance substrate 24
And a tester 20 for applying a current thereto to determine the suitability.

Below the performance board 24, a probe board 30 and a probe card 40 are sequentially arranged.
Are provided, and the wiring pitch is reduced by passing through the probe board 30 and the probe card 40. Further, the connection with the terminal pads 61 formed on the silicon wafer 60 is established through the probes 52 of the contactor substrate 50 provided below the probe card 40.

The probe 52 is provided on the contactor substrate 50 so as to penetrate the contactor substrate 50 and protrude from the upper surface and the lower surface. The probe protruding from the upper surface contacts the terminal pad of the probe card. The probe protruding from one bottom surface comes into contact with a terminal pad provided on the silicon wafer.

The inspection apparatus 10 has a table 26 on which a silicon wafer 60 on which an integrated circuit is formed is mounted. The table 26 is used to adjust the position in the X, Y, and Z directions. Is available. Further, below the table 26, a heater 28 for heating the silicon wafer 60 and a cooling device 29 using a Peltier mechanism or the like for cooling the silicon wafer 60 are provided. Electric power is supplied.

Next, the inspection of the silicon wafer 60 using the inspection apparatus 10 will be described. First, table 2
6, the silicon wafer 60 is placed on the silicon wafer 60.
The positioning mark formed above is read by an optical device (not shown), and the position of the table 26 is adjusted. Thereafter, the performance substrate 24 and the like are pushed down by the elevating device 22, and the probes 52 of the contactor substrate 50 are pressed against predetermined terminal pads of the silicon wafer 60. In FIG. 1, the terminal pads are shown as raised, but the actual thickness of the terminal pads is 1 to 50 μm.

Thereafter, the tester 20 continuously applies a current to predetermined pads 61 of the silicon wafer 60 via the performance board 24, the probe board 30, the probe card 40, and the contactor board 50, and the tester 20 is formed on the silicon wafer. A characteristic test is performed to determine whether the continuity and insulation of the conductor circuit are maintained in the required portions. At this time, the inspection can be performed while cooling or heating the silicon wafer by using the cooling device 29 and the heater 28.

Next, the probe card will be described.
As shown in FIG. 2, a non-oxide ceramic ceramic substrate 41 constituting the probe card 40 has
A through hole 42 is provided, a terminal pad 43 for contacting the probe 52 of the contactor substrate 50 is provided on the bottom surface 41b, and a conductor circuit 44 and a terminal pad 45 for expanding the pitch are provided on the upper surface. Is provided.

Therefore, by using the probe card 40, the connection between the relatively wide pitch terminal pads formed on the performance substrate 24 and the narrow pitch terminal pads 61 formed on the silicon wafer 60 can be ensured. (See FIG. 1).

The ceramic substrate 41 made of a non-oxide ceramic has excellent mechanical properties (strength) at room temperature or high temperature, does not warp or deform even at high temperature, and has a coefficient of thermal expansion that is not much different from that of a silicon wafer. Therefore, the contact position with the probe does not shift, and the contact failure with the probe does not occur. Further, since the thermal conductivity is large, it can quickly follow the temperature change of the silicon wafer.

The non-oxide ceramic is preferably a carbide ceramic or a nitride ceramic having excellent thermal conductivity, and the nitride ceramic is, for example, at least one selected from aluminum nitride, silicon nitride, titanium nitride, and boron nitride. More than species are desirable.

Examples of the carbide ceramic include silicon carbide, tungsten carbide, tantalum carbide, titanium carbide,
At least one or more selected from zirconium carbide is desirable. Among them, aluminum nitride is particularly preferable because it has a particularly high thermal conductivity and quickly follows a temperature change of a silicon wafer.

The ceramic substrate 41 has a density of 10 ⁻⁷ Pa · m ³ / sec measured by a helium leak detector.
(He) Since the leak amount is below, as described above,
Circuits, through holes, and the like formed therein do not come into contact with oxygen or the like in the air. Therefore, these circuits, through holes and the like do not corrode, and the probe card 40 has excellent durability.

When measuring the amount of leak, the diameter 30
A sample having a size of 706.5 mm ² and a thickness of 1 mm, which is the same as that of the ceramic substrate 41, is prepared and set in a helium leak detector. Then, the amount of leakage of the ceramic substrate 41 can be measured by measuring the flow rate of helium passing through the sample.

The helium leak detector measures the partial pressure of helium at the time of the leak, and does not measure the absolute value of the gas flow rate. The helium partial pressure at the time of a known leak is measured in advance, and the unknown leak amount is calculated by a simple proportional calculation from the helium partial pressure at that time. The detailed measurement principle of the helium leak detector is described in “Monthly Semico
nductor World 1992.111 p11
2-115 ". That is, when the ceramic substrate 41 is sufficiently densely sintered, the above-mentioned leak amount shows a considerably small value. On the other hand, if the sinterability of the ceramic substrate 41 is insufficient, the above-mentioned leak amount shows a large value.

More specifically, for example, the surface of a non-oxide ceramic such as nitride ceramic particles is first oxidized, and then the oxide is added thereto and pressure sintering is performed. A sintered body in which an oxide layer such as a ceramic and the added oxide are integrated is formed, and such a sintered body has a density of 10 ⁻⁷ Pa · m ³ measured by a helium leak detector.
/ Sec (He) or less, which is an extremely small leak amount.

Further, when the compact before sintering is uniformly pressed by a cold isostatic press (CIP), the sintering proceeds uniformly, the sintering density is improved, and the leak amount is extremely small.
The pressure at the time of CIP is 50 to 500 MPa (0.5 to 5 t).
/ Cm ² ) is preferred. The leak amount was 1 × 10 ⁻⁸ to 1 × 10 ^{−12 as} measured by a helium leak detector.
Pa · m ³ / sec (He) is preferred. This is because the thermal conductivity at a high temperature can be ensured, and the cooling efficiency during cooling increases.

The oxide to be added is preferably an oxide of an element constituting a non-oxide ceramic. This is because it is the same as the surface oxide layer of the non-oxide ceramic, and it is extremely easy to perform sintering. For example, to oxidize the surface of a nitride ceramic, 50
It is desirable to heat at 0 to 1000 ° C. for 0.5 to 3 hours.

The average particle size of the nitride ceramic powder used for sintering is preferably about 0.1 to 5 μm. This is because sintering is easy. Further, these ceramic powders have a Si content of 0.05 to 50 ppm,
It is desirable that the content of S be 0.05 to 80 ppm (all by weight). This is because these are considered to combine the oxide film on the nitride ceramic surface with the added oxide. Other firing conditions will be described later in detail in a method for manufacturing a probe card.

FIG. 2 shows the probe card 40 in which the conductor circuit is formed on the surface of the ceramic substrate 41, but the conductor circuit may be formed inside the ceramic substrate. FIG. 3A is a cross-sectional view schematically showing a wafer prober in which such a conductive circuit is formed.
(B) is a plan view thereof.

In this probe card 70, the bottom surface 71b
In addition to a through hole 76 extending from the bottom surface 71b to the middle of the ceramic substrate 71, a through hole 76a extending from the bottom surface 71b to the middle of the ceramic substrate 71 is formed. The pitch is increased by forming the conductor circuit 74 having a pattern substantially similar to the pattern shown in b). Then, a through hole 72b formed so as to be connected to the end of the conductor circuit 74 further reaches the upper surface 71a, and FIG.
The pattern of the terminal pad 75 is as shown in FIG.

Therefore, by using the probe card 70, the terminal pads having a relatively wide pitch formed on the performance substrate 24 and the terminal pads formed on the silicon wafer 60 are formed in the same manner as the probe card 40 shown in FIG. The connection with the narrow-pitch terminal pads can be reliably performed.

Next, the material and characteristics of the ceramic substrate and the conductor circuit constituting the probe card 40 will be described in more detail.

As described above, the ceramic substrate is
The ceramic substrate is made of a non-oxide ceramic such as a nitride ceramic or a carbide ceramic, but the ceramic substrate may contain a sintering aid. As the sintering aid, for example,
Examples thereof include alkali metal oxides, alkaline earth metal oxides, and rare earth oxides. Among these sintering aids,
_{CaO, Y 2 O 3, Na} 2 O, Li 2 O, Rb 2 O are preferred. Their content is 0.1 to 20% by weight.
Is preferred. Further, it may contain alumina.

5% by weight in the non-oxide ceramic
The following oxygen may be contained. If the amount of oxygen is about 5% by weight, sintering can be promoted, withstand voltage can be secured, and the amount of warpage at high temperatures can be reduced.

The α dose emitted from the surface of the non-oxide ceramic is desirably 50 c / cm ² · hr or less,
The optimum is 2.0 c / cm ² · hr or less. 50c / c
This is because when the value exceeds m ² · hr, a so-called soft error occurs and an error occurs in the inspection.

In the above ceramic substrate, the JIS
The surface roughness Rmax based on B0601 is 0.01 μm
<Rmax <100 μm is desirable.
Is preferably 0.001 <Ra <10 μm.

The ceramic substrate has a surface roughness of JI.
It is most preferable that SB0601Ra = 0.01 to 10 μm. It is better to take into account the adhesion to the surface of the conductor circuit, but if it is too large, the skin effect (high-frequency signal current is localized and flows on the surface of the conductor circuit) may cause a measurement at a high frequency. This is because it is difficult, and when it is small, a problem occurs in adhesion.

The shape of the ceramic substrate is not particularly limited, but is preferably a square, a polygon, or a disk.
The length of the longest diagonal is preferably from 10 to 350 mm. The thickness of the ceramic substrate is preferably 50 mm or less,
mm or less is more preferable. If the thickness of the ceramic substrate is too large, the size of the device cannot be reduced, and the heat capacity increases, the temperature rising / falling rate decreases, and the temperature matching characteristics deteriorate. Further, by reducing the thickness of the ceramic substrate, the electrical resistance of the probe card can be reduced, and the occurrence of erroneous determination can be prevented.

The flatness of the ceramic substrate is -10 m in diameter.
m or 5 at the measuring distance of the longest diagonal length-10 mm
It is preferably not more than 00 μm. If the thickness exceeds 500 μm, warpage cannot be corrected even by pressing during measurement.

The thermal conductivity κ of the ceramic substrate is 10
W / m · k <κ <300 W / m · k is preferable, and 160
-220 W / mk is more preferable. By increasing the thermal conductivity, the rate of temperature rise / fall is increased, and the temperature matching is improved.

The Young's modulus E of the ceramic substrate is 25 to 6
It is desirable that 60 GPa <E <450 GPa at 00 ° C. This is for preventing the warpage of the ceramic substrate at a high temperature. The bending strength σ _f of the ceramic substrate is 25-600 ° C
And 200 MPa <σ _f <500 MPa is desirable. This is to prevent the ceramic substrate from being damaged during pressing. In addition, at the time of pressing, 0.1 to 1
A pressure of about 0 kg / cm ² is applied.

The porosity of the ceramic substrate is desirably 5% or less. Further, it is desirable that the pore diameter of the maximum pore is 50 μm or less. This is because a withstand voltage at a temperature of 100 ° C. or more is ensured, mechanical strength is increased, and the amount of warpage at the time of pressing or the like can be reduced. In addition, the thermal conductivity is high, and the temperature rises and falls quickly, so that the temperature matching is excellent.

The maximum pore is defined by taking an image of an arbitrary 10 places with an electron microscope, selecting the largest pore in the visual field, and defining the average value of the maximum pore as the pore diameter of the maximum pore. . Further, the porosity may be 0%. Ideally, no porosity is present.

When the pore diameter exceeds 50 μm, it becomes difficult to secure the withstand voltage characteristics at high temperatures, especially at high temperatures, and short-circuits and the like may occur. The maximum pore diameter is 10 μm
The following is desirable. This is because the amount of warpage at a high temperature (for example, 100 ° C. or higher) is reduced.

The porosity is measured by the Archimedes method. Pulverize the sintered body, put the pulverized material in an organic solvent or mercury, measure the volume, calculate the true specific gravity from the weight and volume of the pulverized material, and calculate the porosity from the true specific gravity and the apparent specific gravity .

The porosity and the maximum pore diameter can be adjusted by the pressurization time, pressure, temperature, and additives such as SiC and BN during sintering. As described above, since SiC and BN inhibit sintering, pores can be introduced. The presence of pores increases the toughness value. Therefore, the pores may be present to such an extent that the strength does not decrease so much.

The thickness variation of the ceramic substrate is ± 3.
% Is preferable. This is because the surface of the ceramic substrate needs to be flat in order to eliminate contact failure of the contactor substrate with the probe.

The variation in the thermal conductivity is preferably within ± 10%. This is because it is possible to prevent warpage or the like due to uneven temperature or the like.

The volume resistivity ρ of the ceramic substrate is 10 ¹³
It is desirable that Ω · cm <ρ <10 ¹⁶ Ω · cm.
This is to prevent generation of a leak current at a high temperature and dielectric breakdown between through holes.

The above ceramic substrate has a brightness of JIS Z
It is desirable that the value based on the rule of 8721 is N6 or less. This is because a material having such lightness has a good appearance because it has concealing properties, has a large amount of radiant heat, and rapidly rises in temperature.

Here, the lightness N is defined as 0 for an ideal black lightness, 10 for an ideal white lightness, and a brightness of the color between these black lightness and white lightness. Each color is divided into ten so that the perception of the color is equal, and displayed by symbols N0 to N10. And the actual measurement is N0-N
The comparison is made with the color chart corresponding to No. 10. In this case, the first decimal place is 0 or 5.

The ceramic substrate having such characteristics has a carbon content of 100 to 5000 p in the ceramic substrate.
pm. There are two types of carbon, amorphous and crystalline.Amorphous carbon can suppress a decrease in volume resistivity of a ceramic substrate at a high temperature. Since the decrease in thermal conductivity at high temperatures can be suppressed, the type of carbon can be appropriately selected according to the purpose of the substrate to be manufactured.

The amorphous carbon is, for example, C, H, O
Hydrocarbons, preferably saccharides, can be obtained by calcining in air, and graphite powder can be used as the crystalline carbon.
In addition, carbon can be obtained by thermally decomposing the acrylic resin under an inert atmosphere and then heating and pressurizing the same. Can be adjusted.

In the present invention, as shown in FIGS. 2 and 3, through-holes and conductor circuits are formed inside the ceramic substrate. These through-holes and conductor circuits are made of high melting point metal such as tungsten or molybdenum. , And a conductive ceramic such as tungsten carbide and molybdenum carbide.

The diameter of the through hole is 0.1 to 10 mm
Is desirable. This is because cracks and distortion can be prevented while preventing disconnection. The shape of the through hole is not particularly limited, and examples thereof include a columnar shape and a prismatic shape (square column, column, etc.).

Also, on the surface of the ceramic substrate, a conductor circuit for expanding the wiring pitch, and terminal pads for connecting to a probe substrate disposed above and a contactor substrate disposed below. Need to be formed,
These through holes, conductor circuits, terminal pads, and the like are usually desirably made of a high melting point metal such as tungsten or molybdenum, or a conductive ceramic such as tungsten carbide or molybdenum carbide.

However, depending on the case, these conductor layers may be made of a noble metal such as gold, silver or platinum, or a metal such as nickel. The area resistivity of these through holes, conductor circuits, terminal pads, etc. is 1 to 50 μΩ / □ c.
m is preferred. When the sheet resistivity exceeds 50 μΩ / □ cm, the inspection apparatus may make an erroneous determination due to heat generation in the through holes and the like.

In order to form a through hole or a conductive circuit on the surface or inside of the ceramic substrate, it is preferable to use a conductive paste made of metal or conductive ceramic. That is, when forming a through-hole or a conductor circuit inside a ceramic substrate, the through-hole formed in the green sheet is filled with a conductor paste, or the above-described green sheet is formed after the conductor paste layer is formed on the green sheet. By laminating and firing, through holes and conductive circuits are formed inside.

Further, by forming and firing a conductive paste layer on a green sheet as an uppermost layer or a lowermost layer, conductive circuits and terminal pads can be formed on the surface of the ceramic substrate.

On the other hand, the conductor circuit and the terminal pads can also be formed by forming the above-mentioned conductor paste layer on the surface thereof after the ceramic substrate is manufactured and firing it.
Further, the terminal pads may be formed by plating, sputtering, or the like.

The conductive paste is not particularly limited, but preferably contains a resin, a solvent, a thickener, etc. in addition to metal particles or conductive ceramic particles in order to secure conductivity.

Examples of the material of the metal particles and the conductive ceramic particles include those described above. The particle size of these metal particles or conductive ceramic particles is 0.1 to 10
0 μm is preferred. If it is too fine, less than 0.1 μm, it is liable to be oxidized, while if it exceeds 100 μm, sintering becomes difficult and the resistance value becomes large.

The shape of the metal particles may be spherical,
It may be scaly. When these metal particles are used, they may be a mixture of the above-mentioned spheres and the above-mentioned flakes. When the metal particles are scaly, or a mixture of a spherical and scaly, it is easy to hold the metal oxide between the metal particles, and the adhesion between the conductor circuit and the ceramic substrate is ensured. This is advantageous.

Examples of the resin used for the conductor paste include an epoxy resin and a phenol resin. Examples of the solvent include isopropyl alcohol. Examples of the thickener include cellulose and the like.

When the conductor paste layer is formed on the surface of the ceramic substrate, a metal oxide is added to the conductor paste in addition to the metal particles, and the metal particles and the metal oxide are sintered. It is preferable that Thus, by sintering the metal oxide together with the metal particles, the ceramic substrate and the metal particles can be more closely adhered.

It is not clear why mixing the above-mentioned metal oxide improves the adhesion to the ceramic substrate. However, the surface of the metal substrate or the surface of the ceramic substrate made of non-oxide has a slight surface. It is considered that the oxide film is oxidized to form an oxide film, and the oxide films are sintered and integrated via the metal oxide, so that the metal particles and the ceramic adhere to each other. Further, when the ceramic constituting the ceramic substrate is an oxide, the surface is naturally made of an oxide, so that a conductor layer having excellent adhesion is formed.

As the metal oxide, for example, oxidized
Lead, zinc oxide, silica, boron oxide (B _Two O_Three ), Al
Selected from the group consisting of Mina, Yttria and Titania
At least one is preferred. These oxides are metal
It can improve the adhesion between particles and ceramic substrate.
Because it can.

The ratio of the above-mentioned lead oxide, zinc oxide, silica, boron oxide (B ₂ O ₃ ), alumina, yttria, and titania is calculated by weight ratio when the total amount of the metal oxide is 100 parts by weight. 1-10, silica 1-30, boron oxide 5-50, zinc oxide 20-70, alumina 1
-10, yttria 1-50, titania 1-50, and the total is preferably adjusted so as not to exceed 100 parts by weight. By adjusting the amounts of these oxides in these ranges, the adhesion to the ceramic substrate can be particularly improved.

In the present invention, a conductor circuit may be formed on at least one surface of the above-described ceramic substrate via a resin layer. Through the resin layer, it is possible to follow the pressing force at the time of the inspection, and moreover, it is less likely to be damaged than ceramic. Further, since the resin can lead the fine wiring, a high-density probe card can be obtained. Further, the resin has a smaller dielectric constant than the ceramic and has no propagation delay.

A through hole may be formed in the ceramic substrate, and a conductor circuit may be formed in the ceramic substrate. There may be two or more resin layers, in which case the conductor circuits on each resin layer are connected by via holes.

As the resin, at least one selected from epoxy resins, polyimide resins, and bismaleimide-triazine resins can be used. Further, it is desirable that the resin is sensitized. This is because the opening can be formed by photolithography. The thickness of the resin layer is 5-1
00 μm is desirable. This is to ensure insulation at high temperatures.

Next, a method for manufacturing the probe card of the present invention (method A) will be described with reference to FIG. (1) Green Sheet Manufacturing Step First, a paste is prepared by mixing non-oxide ceramic powder such as a nitride ceramic or a carbide ceramic with a binder, a solvent or the like, and a green sheet is manufactured using the paste. Aluminum nitride or the like can be used as the above-mentioned ceramic powder, and a sintering aid such as yttria may be added as necessary. Also, these powders
An oxidation treatment may be performed before mixing to improve sinterability. Further, when producing a green sheet, crystalline or amorphous carbon may be added.

The binder is preferably at least one selected from an acrylic binder, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol.
Further, as the solvent, at least one selected from α-terpineol and glycol is desirable.

The paste obtained by mixing these is formed into a sheet by a doctor blade method to form a green sheet 4.
00 is produced. The thickness of the green sheet 400 is 0.
1-5 mm is preferred. Next, a portion to be a through hole for forming a through hole is formed in the obtained green sheet as needed. The above processing may be performed after forming a green sheet laminate described later.

(2) Step of Printing Conductor Paste on Green Sheet The above-described conductor paste is used on the green sheet 400 as the uppermost layer and the green sheet as the lowermost layer.
Conductive paste layers 430 and 440 made of conductive paste are formed. In addition, a portion serving as a through hole is filled with a conductive paste to form a filling layer 420.

When a conductor circuit is formed inside, a conductor paste layer may be formed on a green sheet serving as an inner layer.

[0086] These conductive pastes contain metal particles or conductive ceramic particles. The material of the metal particles includes, for example, tungsten or molybdenum, and the conductive ceramic includes, for example, tungsten carbide or molybdenum carbide.

The average particle diameter of the metal particles such as tungsten particles or molybdenum particles is preferably 0.1 to 5 μm. Average particles less than 0.1 μm or 5 μm
This is because when the value exceeds the above, it is difficult to print the conductor paste.

As such a conductive paste, for example, 85 to 87 parts by weight of metal particles or conductive ceramic particles; 1.5 to 10 parts by weight of at least one kind of binder selected from acrylic, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol And a composition (paste) obtained by mixing 1.5 to 10 parts by weight of at least one solvent selected from α-terpineol and glycol.

(3) Green Sheet Laminating Step The green sheet 4 having only the filling layer 420 between the green sheet 400 as the uppermost layer and the green sheet as the lowermost layer having the conductive paste layers 430, 440, etc.
00 are laminated and pressure-bonded to produce a laminate (see FIG. 4).

(4) Firing Step of Green Sheet Laminate Next, the green sheet laminate is heated and pressurized, and the laminate is calcined at 300 to 1000 ° C., followed by cold isostatic pressing (CIP). ), The variation in thermal conductivity due to the difference in sintering density can be reduced. The pressure at the time of CIP is 50-
500 MPa (0.5 to 5 t / cm ² ) is preferable. As described above, the green sheet 400 and the internal and external conductor pastes are sintered to produce the ceramic substrate 41 having the through holes 42 and the like (see FIG. 2). The heating temperature is preferably from 1000 to 2000 ° C.,
10-20 MPa is preferable. Heating is performed in an inert gas atmosphere. As the inert gas, for example, argon,
Nitrogen or the like can be used.

The obtained ceramic substrate 41 is processed if necessary, and the manufacture of the probe card is completed. When a conductor circuit is provided inside a ceramic substrate, a conductor paste layer may be formed on a green sheet, and another green sheet may be laminated above and below the green sheet, and then fired. When a conductor layer is formed on the surface of a ceramic substrate, the conductor layer may be formed by using a sputtering method or a plating method after manufacturing the ceramic substrate.

In addition to the above manufacturing method, the following manufacturing method (manufacturing method B) may be employed. (1) A slurry is prepared by blending a sintering aid such as yttria or a binder as necessary with the powder of a non-oxide ceramic such as the above-mentioned nitride ceramic or carbide ceramic, and then spraying the slurry. Granules are formed by a method such as drying, and the granules are placed in a mold or the like and pressed to be formed into a plate shape or the like, thereby producing a green body. The ceramic powder may be subjected to an oxidation treatment before preparing the slurry. Further, at the time of preparing the slurry, amorphous or crystalline carbon may be added. Next, the generated feature is
Calcination is performed at a temperature of up to 1600 ° C., and a through hole to be a through hole is formed by a drill or the like.

(2) Step of Printing Conductive Paste on Substrate The conductive paste is generally a high-viscosity fluid composed of metal particles or a conductive paste or a mixture thereof, a resin, and a solvent. This conductor paste is printed on conductor circuits and through-hole portions by screen printing or the like to form conductor paste layers and through-holes. The conductor circuit may be formed after the sintering step (3) described below is completed. (3) Sintering Step of Substrate Next, the calcined body is heated, fired and sintered to produce a ceramic plate. Thereafter, the substrate is fabricated by processing into a predetermined shape, but may be a shape that can be used as it is after firing. Further, by compressing the calcined body using a cold isostatic press (CIP), sintering proceeds uniformly, and the sintered density can be improved. The pressure at the time of CIP is 50 to 500
MPa (0.5 to 5 t / cm ² ) is preferred. By performing heating and baking while applying pressure, a substrate without pores can be manufactured. Heating and firing may be performed at a sintering temperature or higher, but in the case of a nitride ceramic or a carbide ceramic, the temperature is 1000 to 2500C.

Further, the case where a conductor circuit is formed on a ceramic substrate via a resin layer will be described. (1) First, a ceramic substrate is manufactured. This ceramic substrate may have a through-hole formed therein, or may have a conductive circuit formed on the surface or inside. Such a ceramic substrate can be manufactured by the methods A and B. The following description is based on the case where a through hole is formed on the surface obtained by the manufacturing method A.

(2) A conductor layer is provided on both surfaces of the obtained ceramic substrate by sputtering, plating, or the like with a metal such as titanium, molybdenum, nickel, or chromium, and an etching resist is formed by photolithography. Next, a part of the conductor layer is dissolved with an etching solution,
The etching resist is peeled off to form a conductor circuit. The thickness of the conductor circuit is preferably 1 to 10 μm. On the conductor circuit surface on the side where the resin layer is not formed, by electroless plating,
A non-oxidizable metal layer such as a nickel or noble metal (gold, platinum, silver, palladium) layer is provided. The thickness of the non-oxidizable metal layer is preferably 1 to 10 μm.

(3) Form a resin layer on at least one surface. The resin is preferably a photosensitive resin, and is preferably an acrylated epoxy resin or an acrylated polyimide resin. The resin layer may be formed by laminating a resin film or by spin-coating a liquid resin.

(4) After forming the resin layer, it is dried by heating, and then exposed and developed to form an opening. Further, the resin liquid is spin-coated again, dried by heating, and then exposed and developed to form an opening. The reason why one interlayer resin insulating layer is formed twice in this way is that even if a pinhole is formed in one of the resin layers, the other resin layer can ensure insulation. It is. Note that a resin may be filled between the conductor circuits formed on the surface of the ceramic substrate so as to eliminate unevenness due to the conductor circuits and to flatten them. Further, the opening may be provided by laser light.

(5) Next, the surface of the resin layer is modified by an oxygen plasma treatment or the like. Since a hydroxyl group is formed on the surface, adhesion to a metal is improved. Then chrome,
Perform sputtering of copper or the like. The thickness of the sputtering layer is preferably from 0.1 to 5 μm. Next, a plating resist is formed by photolithography, and Cu and Ni layers are formed by electrolytic plating. The thickness is desirably 2 to 10 μm. Thereafter, by removing the plating resist and performing etching, the portion where the conductor layer is formed is melted only by sputtering to form a conductor circuit. Thereafter, by repeating the above steps (3) to (5), a probe card in which a plurality of layers of resin and conductive circuits are formed on a ceramic substrate is manufactured. When forming a conductor circuit and a resin layer on a ceramic substrate,
The conductor circuit (resin layer) to be formed may be a single layer,
It may have two or more layers.

The probe card having such a configuration is used, for example, in an inspection apparatus as shown in FIG. That is, in this inspection apparatus, the silicon wafer 60 is mounted on the performance substrate 24, and further, the contactor substrate 50 and the probe card 40 are mounted thereon, and the probe card 40 and the silicon wafer are mounted via the contactor substrate 50. The connection with 60 is made.

The connection between the performance board 24 and the probe card 40 is made via the probe board 30. Therefore, the pads (not shown) on the silicon wafer 60 are connected to the pads on the performance board 24 via the contactor board 50-the conductor circuit formed on the probe card 40-the probe board 30. .

[0101]

EXAMPLES Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples. (Example 1) Manufacture of a probe card (see FIGS. 3 and 4) (1) Aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm) 10 baked in air at 500 ° C. for 1 hour 10
0 parts by weight, yttria (Y ₂ O ₃ , average particle size: 0.4 μm)
m) Using a paste obtained by mixing 4 parts by weight, 11.5 parts by weight of an acrylic binder, 0.5 parts by weight of a dispersant, and 53 parts by weight of alcohol composed of 1-butanol and ethanol, molding was performed by a doctor blade method, Thickness 0.
A 47 mm green sheet 400 was produced.

(2) Next, the green sheet 400 was dried at 80 ° C. for 5 hours, and then a through hole or the like to be a through hole 58 was formed by punching. (3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, 3.0 parts by weight of an acrylic binder, α-
A conductor paste A was prepared by mixing 3.5 parts by weight of a terpineol solvent and 0.3 parts by weight of a dispersant.

Tungsten particles 10 having an average particle diameter of 3 μm
A conductive paste B was prepared by mixing 0 parts by weight, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant.

This conductive paste A is printed on the green sheet as the uppermost layer and the lowermost layer by screen printing, and the conductive paste layer 440 for the conductive circuit 44 and the terminal pad 45 is printed.
Was formed. The printing pattern was a pattern as shown in FIG. 2, and the width of the conductive paste layer was 75 μm and its thickness was 3 μm. Further, a conductive paste B was filled into a portion to be a through hole to form a filling layer 420.

Between the two green sheets 400 after the above treatment, 25 green sheets 400 on which only the filling layer 420 was formed were laminated and pressed at 130 ° C. and a pressure of 8 MPa.

(4) Next, the obtained laminate was degreased in a nitrogen gas at 600 ° C. for 5 hours, and further subjected to 30 MPa (3 t / c) using cold isostatic pressure (CIP) manufactured by Kobe Steel.
m ² ) at a pressure of 1890 ° C. and a pressure of 15
Hot pressing was performed at 10 MPa for 10 hours to obtain a 5 mm-thick aluminum nitride sintered body. This is cut into a square having a side of 60 mm, and a probe card 40 having a cylindrical through hole 42 having a diameter of 200 μm, a conductor circuit 44 having a thickness of 3 μm and a width of 75 μm, and a terminal pad 43 having a width of 500 μm square is manufactured. finished.

Example 2 Manufacture of Probe Card (See FIG. 2) (1) Aluminum nitride powder (manufactured by Tokuyama, average particle size 1.1 μm) 100 fired in air at 500 ° C. for 1 hour 100
Parts by weight, yttria (Y ₂ O ₃ average particle size 0.4 μm)
A composition comprising 4 parts by weight, 12 parts by weight of an acrylic resin binder and alcohol was spray-dried to prepare a granular powder.

(2) Next, this granular powder was put into a mold and molded into a flat plate to obtain a formed product (green). Further, this formed form was subjected to cold isostatic pressure (CI
Using P), compression was performed at a pressure of 30 MPa (3 t / cm ² ), and then the surface was polished. Then, a through-hole for the through-hole 42 was formed by a drill in the molded body after the above treatment, and the inside thereof was filled with the conductive paste B used in Example 1.

(3) One side of the molded body after the above process is
A 60 mm square was cut out to form a ceramic plate (ceramic substrate 41). (4) Next, 100 parts by weight of tungsten carbide particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant were mixed and mixed. Paste C was prepared. Using the conductive paste C, a conductive paste layer for the conductive circuit 44 and the terminal pad 43 was formed on the upper surface 41a and the lower surface 41b of the ceramic substrate 41 by screen printing.

(5) Next, the substrate on which the conductor paste is printed is hot-pressed at 1800 ° C. and 20 MPa to sinter tungsten, tungsten carbide, and the like in the conductor paste and to bake the sintered body to form a conductor circuit 44. And a cylindrical through hole 4 having a diameter of 200 μm inside.
2. The manufacture of the probe card 40 having the conductor circuit 44 having a thickness of 3 μm and the width of 75 μm and the terminal pad 43 of 500 μm square was completed.

Example 3 Production of Probe Card Having Polyimide Resin Layer (See FIG. 5) (1) Aluminum nitride powder fired in air at 500 ° C. for 1 hour (manufactured by Tokuyama, average particle size: 1.1 μm) ) 10
0 parts by weight, yttria (Y ₂ O ₃ , average particle size: 0.4 μm)
m) Using a paste obtained by mixing 4 parts by weight, 11.5 parts by weight of an acrylic binder, 0.5 parts by weight of a dispersant, and 53 parts by weight of alcohol composed of 1-butanol and ethanol, molding was performed by a doctor blade method, Thickness 0.
A 47 mm green sheet 400 was produced.

(2) Next, the green sheet is heated to 80 ° C.
After drying for 5 hours, a through hole or the like serving as a through hole was formed by punching. (3) Conductive paste B was prepared by mixing 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant. . Further, the conductive paste B was filled into the portion to be a through hole, and a filling layer 420 was formed.

(4) Twenty-five green sheets 400 having only the filling layer 420 formed thereon were laminated and pressed at 130 ° C. and a pressure of 8 MPa between the two green sheets 400 after the above treatment. (5) Next, the obtained laminate was degreased in nitrogen gas at 600 ° C. for 5 hours, and further subjected to a cold isostatic pressure (C
Using IP), compression was performed at a pressure of 30 MPa (3 t / cm ² ), and then hot-pressed at 1890 ° C. and a pressure of 15 MPa for 10 hours to obtain a 5 mm-thick aluminum nitride sintered body. This is cut into a square having a side of 60 mm, and a cylindrical through hole 82 having a diameter of 200 μm is formed inside.
Was obtained.

(6) On both surfaces of the ceramic substrate 81,
Sputtering equipment (CFS-RP-1 manufactured by Tokuda Seisakusho)
00) using 0.1 μm thick Ti and 2.0 μm M
o, Ni of 1.0 μm was sputtered in this order. Further, a resist was laminated, and then exposed and developed to obtain an etching resist. HF / HN at 55 ° C
Etching with O ₃ aqueous solution, Ti layer, Mo layer, Ni layer
A conductor circuit 83 composed of layers was formed.

(7) The ceramic substrate was heated at 120 ° C. for 30 minutes before coating. Next, a photosensitive polyimide (I-8802B manufactured by Asahi Kasei) was applied by a spin coater,
The resultant was dried by heating at 20 ° C. for 20 minutes, and then heated and cured at 350 ° C. to form a polyimide layer 84, which was smoothed without any unevenness between the conductor circuits.

(8) Further, photosensitive polyimide (I-8802B manufactured by Asahi Kasei) was applied by a spin coater,
And dried by heating at 20 mJ for 20 minutes. A mask is laminated and exposed at 200 mJ.
MDG). Further, it was heated at 350 ° C. and post-baked to be cured.

(9) The same processing as in step (8) is performed.
A second polyimide layer 85 having a thickness of 10 μm was formed. A via hole opening having a diameter of 100 μm was formed in the polyimide layer 85. (10) The surface of the polyimide layer was subjected to oxygen plasma treatment. Further, the surface was washed with 10% sulfuric acid.

(11) Next, a Cr layer having a thickness of 0.1 μm and a copper layer having a thickness of 0.5 μm were formed in this order by the above-mentioned sputtering apparatus. (12) Then, a resist film was laminated, exposed and developed to form a plating resist.

(13) Further, 80 g / l copper sulfate and 18 g / l
Electrolytic copper plating bath consisting of 0 g / l sulfuric acid and 100 g / l
Using an electrolytic nickel bath containing 1 l of nickel sulfamate, electrolytic plating was performed at a current density of 1 A / dm ² to form a conductor having a thickness of 5.5 μm of copper and a thickness of 1 μm of Ni.

(12) Further, the plating resist is removed,
Hydrochloric acid / water = 2/1 (40 ° C) aqueous solution for Cr and Cu layers
Remove and remove terminal pad 86a (50 μm square)
The conductor circuit 86 includes the conductor circuit 86b. (13) Mask the resin surface with a film coated with an adhesive.
And then nickel chloride 2.31 × 10^-2mol / l,
Sodium hypophosphite 2.84 × 10^-2mol / l,
Sodium enoate 1.55 × 10^-2mol / l
pH = 4.5 electroless nickel plating bath, gold cyanide
Li 7.61 x 10^-3mol / l, ammonium chloride
1.87 × 10^-1mol / l, sodium citrate
16 × 10 ^-1mol / l, sodium hypophosphite 1.7
0x10^-1mol / l using a gold plating bath.
Ni layer 830a having a thickness of 5 μm and a thickness of 0.03
A non-oxidizable metal film 830 made of a μm Au layer 830b is
Thus, a probe card 80 was obtained (see FIG. 5).

(Example 4) The same as Example 2, but the following steps were changed. 91.5 parts by weight of SiC powder (average particle size: 0.5 μm), B ₄ C: 8% by weight instead of (1),
C: A composition comprising 0.5% by weight and alcohol was spray-dried to prepare a granular powder.

Instead of (2), a granular powder was placed in a mold and formed into a flat plate to obtain a formed product (green). This green compact was sintered under pressure at 1980 ° C. and 20 MPa for 3 hours, and further heated at 1500 ° C. for 3 hours. Next,
Glass paste (G-517 manufactured by Shoei Chemical Industry Co., Ltd.)
7) was applied and baked at 700 ° C. to provide a coat layer having a thickness of 2 μm on the surface, and a conductor circuit was formed thereon. In this example, the probe card had no through hole, and the manufacture of the probe card was completed.

Comparative Example 1 100 parts by weight of alumina powder (average particle diameter 1.0 μm), acrylic binder 11.5
A green sheet 400 having a thickness of 0.47 mm is prepared by using a paste obtained by mixing 0.5 parts by weight of a dispersant and 53 parts by weight of an alcohol composed of 1-butanol and ethanol by a doctor blade method. Thereafter, a laminate was prepared, and a probe card was manufactured in the same manner as in Example 1 except that firing was performed without using cold isostatic pressure (CIP) manufactured by Kobe Steel.

Comparative Example 2 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm), 11.5 parts by weight of an acrylic binder, 0.5 part by weight of a dispersant, 1-butanol and ethanol Alcohol 5
Using a paste obtained by mixing 3 parts by weight, molding was performed by a doctor blade method to produce a green sheet 400 having a thickness of 0.47 mm, and firing was performed without using cold isostatic pressure (CIP). A probe card was manufactured in the same manner as in Example 1.

[0125]Evaluation method  (1) Measurement of the amount of helium leak
A sample (area 706.5 mm)^Two , Thickness 1
mm), general-purpose helium leak detector
(“MSE-11AU / TP” manufactured by Shimadzu Corporation)
Then, the amount of helium leak was measured. The result is
The results are shown in Table 1.

(2) Investigation of Probe Card Performance Using Inspection Apparatus The probe cards according to Examples and Comparative Examples were
The probe card according to the example and the comparative example was set in the inspection apparatus shown in FIG.
Using 0 silicon wafers, 140
After the temperature was raised to ° C., the operation state of the circuit was inspected. If the inspection apparatus returns a result of rejection, the inspection apparatus has made an erroneous determination, and the probe card itself has a defect.

[0127]

[Table 1]

As is clear from the results shown in Table 1 above, in the inspection apparatus using the probe cards according to Examples 1 to 4, all the products were judged to be acceptable in 100 inspections. However, in the probe cards according to Comparative Examples 1 and 2, 50 to 60% of the products were judged to be rejected products, and it was found that the probability that the inspection apparatus made an erroneous judgment at a high temperature was high. .

The probe cards according to Examples 1 to 4 were densely sintered at 2 × 10 ⁻¹⁰ to 8 × 10 ⁻⁸ Pa · m ³ / sec. The probe card according to Example 1 is 1 × 10 ⁻⁶ Pa · m ³ / sec, and the probe card according to Comparative Example 2 is 5 × 10 ⁻⁶ Pa · m ³ / sec.
c and inferior sinterability.

It is presumed that the inspection apparatus using the probe card according to Comparative Examples 1 and 2 determined that the inspection card was unacceptable due to corrosion of through holes and the like.

[0131]

As described above, according to the present invention, the probe card is made of a ceramic substrate made of a non-oxide ceramic, and the probe card is measured at 10 ⁻⁷ Pa · m ³ / sec (measured by a helium leak detector). He) is less than or equal to the leak amount. Therefore, even when used for a long time, corrosion does not occur in the internal through holes and the like, and the mechanical strength is excellent at ordinary temperature and high temperature. It is possible to provide a probe card which is free from deformation or the like and has a high temperature matching. Therefore, by using this probe card, it is possible to make an accurate judgment on the operation state of the integrated circuit formed on the silicon wafer.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing a configuration of an inspection device using a probe card of the present invention.

FIG. 2A is a cross-sectional view schematically illustrating an example of a probe card, and FIG. 2B is a plan view thereof.

FIG. 3A is a cross-sectional view schematically showing another example of the probe card, and FIG. 3B is a plan view thereof.

FIG. 4 is a cross-sectional view schematically showing a green sheet laminating step in manufacturing a probe card.

FIG. 5 is a cross-sectional view schematically showing a probe card having a resin layer.

FIG. 6 is a sectional view schematically showing another inspection apparatus using the probe card of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Inspection apparatus 20 Tester 22 Heating device 24 Performance board 28 Heater 29 Cooling device 30 Probe 40, 70 Probe card 41, 71 Ceramic substrate 41a, 71a Top surface 41b, 71b Bottom surface 42, 72a, 72b, 76 Through hole 43, 45, 73, 75 Terminal pad 44, 74 Conductor circuit 50 Contactor substrate 60 Silicon wafer

Claims (3)

[The claims] 1. A probe card for use in inspecting an integrated circuit formed on a semiconductor wafer, comprising a ceramic substrate made of a non-oxide ceramic, wherein the ceramic substrate is measured by a helium leak detector at 10 ^-7.
A probe card having a leak amount of Pa · m ³ / sec (He) or less. 2. The probe card according to claim 1, wherein a through hole is formed at least inside the ceramic substrate. 3. The probe card according to claim 1, wherein a conductor circuit is formed on one main surface of the ceramic substrate.