JP2001196702A5 - - Google Patents

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Publication number
JP2001196702A5
JP2001196702A5 JP2000002095A JP2000002095A JP2001196702A5 JP 2001196702 A5 JP2001196702 A5 JP 2001196702A5 JP 2000002095 A JP2000002095 A JP 2000002095A JP 2000002095 A JP2000002095 A JP 2000002095A JP 2001196702 A5 JP2001196702 A5 JP 2001196702A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000002095A
Other languages
Japanese (ja)
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JP2001196702A (ja
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Publication date
Application filed filed Critical
Priority to JP2000002095A priority Critical patent/JP2001196702A/ja
Priority claimed from JP2000002095A external-priority patent/JP2001196702A/ja
Publication of JP2001196702A publication Critical patent/JP2001196702A/ja
Publication of JP2001196702A5 publication Critical patent/JP2001196702A5/ja
Withdrawn legal-status Critical Current

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JP2000002095A 2000-01-11 2000-01-11 Ｉｉｉ族窒化物系化合物半導体発光素子 Withdrawn JP2001196702A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000002095A JP2001196702A (ja) 2000-01-11 2000-01-11 Ｉｉｉ族窒化物系化合物半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000002095A JP2001196702A (ja) 2000-01-11 2000-01-11 Ｉｉｉ族窒化物系化合物半導体発光素子

Publications (2)

Publication Number Publication Date
JP2001196702A JP2001196702A (ja) 2001-07-19
JP2001196702A5 true JP2001196702A5 (cg-RX-API-DMAC7.html) 2006-11-30

Family

ID=18531241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000002095A Withdrawn JP2001196702A (ja) 2000-01-11 2000-01-11 Ｉｉｉ族窒化物系化合物半導体発光素子

Country Status (1)

Country Link
JP (1) JP2001196702A (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100576857B1 (ko) * 2003-12-24 2006-05-10 삼성전기주식회사 ＧａＮ 반도체 발광소자 및 그 제조방법
CN100356593C (zh) * 2004-03-30 2007-12-19 晶元光电股份有限公司 高效率氮化物系发光元件
WO2006109840A1 (en) * 2005-04-07 2006-10-19 Showa Denko K.K. Production method of group iii nitride semioconductor element
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
JP5068020B2 (ja) 2006-02-20 2012-11-07 シャープ株式会社 窒化物半導体発光素子の製造方法
JP5047508B2 (ja) * 2006-02-27 2012-10-10 シャープ株式会社 窒化物半導体発光素子の製造方法
US7781780B2 (en) 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
JP2013145867A (ja) * 2011-12-15 2013-07-25 Hitachi Cable Ltd 窒化物半導体テンプレート及び発光ダイオード
JP5983554B2 (ja) 2013-07-25 2016-08-31 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
JP7340047B2 (ja) * 2022-01-25 2023-09-06 日機装株式会社 窒化物半導体発光素子の製造方法

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