JP2001196702A5 - - Google Patents
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- Publication number
- JP2001196702A5 JP2001196702A5 JP2000002095A JP2000002095A JP2001196702A5 JP 2001196702 A5 JP2001196702 A5 JP 2001196702A5 JP 2000002095 A JP2000002095 A JP 2000002095A JP 2000002095 A JP2000002095 A JP 2000002095A JP 2001196702 A5 JP2001196702 A5 JP 2001196702A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000002095A JP2001196702A (ja) | 2000-01-11 | 2000-01-11 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000002095A JP2001196702A (ja) | 2000-01-11 | 2000-01-11 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001196702A JP2001196702A (ja) | 2001-07-19 |
| JP2001196702A5 true JP2001196702A5 (ja) | 2006-11-30 |
Family
ID=18531241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000002095A Withdrawn JP2001196702A (ja) | 2000-01-11 | 2000-01-11 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001196702A (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100576857B1 (ko) * | 2003-12-24 | 2006-05-10 | 삼성전기주식회사 | ＧａＮ 반도체 발광소자 및 그 제조방법 |
| CN100356593C (zh) * | 2004-03-30 | 2007-12-19 | 晶元光电股份有限公司 | 高效率氮化物系发光元件 |
| JP2006344930A (ja) * | 2005-04-07 | 2006-12-21 | Showa Denko Kk | Ｉｉｉ族窒化物半導体素子の製造方法 |
| EP1869717B1 (en) * | 2005-04-07 | 2017-01-04 | Toyoda Gosei Co., Ltd. | Production method of group iii nitride semioconductor element |
| JP5068020B2 (ja) | 2006-02-20 | 2012-11-07 | シャープ株式会社 | 窒化物半導体発光素子の製造方法 |
| JP5047508B2 (ja) * | 2006-02-27 | 2012-10-10 | シャープ株式会社 | 窒化物半導体発光素子の製造方法 |
| US7781780B2 (en) | 2008-03-31 | 2010-08-24 | Bridgelux, Inc. | Light emitting diodes with smooth surface for reflective electrode |
| JP2013145867A (ja) * | 2011-12-15 | 2013-07-25 | Hitachi Cable Ltd | 窒化物半導体テンプレート及び発光ダイオード |
| JP5983554B2 (ja) | 2013-07-25 | 2016-08-31 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子 |
| JP7340047B2 (ja) * | 2022-01-25 | 2023-09-06 | 日機装株式会社 | 窒化物半導体発光素子の製造方法 |
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2000
- 2000-01-11 JP JP2000002095A patent/JP2001196702A/ja not_active Withdrawn