JP2001196590A5 - - Google Patents
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- JP2001196590A5 JP2001196590A5 JP2000002019A JP2000002019A JP2001196590A5 JP 2001196590 A5 JP2001196590 A5 JP 2001196590A5 JP 2000002019 A JP2000002019 A JP 2000002019A JP 2000002019 A JP2000002019 A JP 2000002019A JP 2001196590 A5 JP2001196590 A5 JP 2001196590A5
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- JP
- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000002019A JP4896286B2 (ja) | 2000-01-07 | 2000-01-07 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000002019A JP4896286B2 (ja) | 2000-01-07 | 2000-01-07 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001196590A JP2001196590A (ja) | 2001-07-19 |
| JP2001196590A5 true JP2001196590A5 (enrdf_load_stackoverflow) | 2007-02-22 |
| JP4896286B2 JP4896286B2 (ja) | 2012-03-14 |
Family
ID=18531178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000002019A Expired - Fee Related JP4896286B2 (ja) | 2000-01-07 | 2000-01-07 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4896286B2 (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6878415B2 (en) * | 2002-04-15 | 2005-04-12 | Varian Semiconductor Equipment Associates, Inc. | Methods for chemical formation of thin film layers using short-time thermal processes |
| JP3904512B2 (ja) | 2002-12-24 | 2007-04-11 | シャープ株式会社 | 半導体装置およびその製造方法、並びに半導体装置を備えた電子機器 |
| WO2005047968A1 (en) | 2003-11-14 | 2005-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| WO2005050597A1 (en) | 2003-11-14 | 2005-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| US7439086B2 (en) | 2003-11-14 | 2008-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing liquid crystal display device |
| US8247965B2 (en) | 2003-11-14 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting display device and method for manufacturing the same |
| KR100796608B1 (ko) * | 2006-08-11 | 2008-01-22 | 삼성에스디아이 주식회사 | 박막 트랜지스터 어레이 기판의 제조방법 |
| US10867788B2 (en) * | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0323639A (ja) * | 1989-06-21 | 1991-01-31 | Sony Corp | 薄膜トランジスタ |
| JP3386863B2 (ja) * | 1993-09-29 | 2003-03-17 | 三菱電機株式会社 | 薄膜トランジスタ及びその製造方法 |
| JP3338182B2 (ja) * | 1994-02-28 | 2002-10-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH10303128A (ja) * | 1997-04-30 | 1998-11-13 | Fujitsu Ltd | 成膜方法 |
| JP4115589B2 (ja) * | 1997-10-17 | 2008-07-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3027968B2 (ja) * | 1998-01-29 | 2000-04-04 | 日新電機株式会社 | 成膜装置 |
| JP3622492B2 (ja) * | 1998-03-30 | 2005-02-23 | セイコーエプソン株式会社 | 薄膜半導体装置の製造方法 |
| JPH11329970A (ja) * | 1998-05-18 | 1999-11-30 | Sharp Corp | 半導体装置の製造方法 |
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2000
- 2000-01-07 JP JP2000002019A patent/JP4896286B2/ja not_active Expired - Fee Related