JP2001174506A - Method of manufacturing socket and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent such a problem that a warpage occurs on a flexible film of a TCP type semiconductor device. SOLUTION: This socket for storing a semiconductor device is formed in a flexible film and comprises a lead with one end connected to the electrode pad of a semiconductor chip and the other end extracted to the outer peripheral side of the semiconductor chip. When the semiconductor device is stored, the connection part of a contact pin is connected to a part of the other end of the lead while rubbing against a part of the other end of the lead toward the tip of the other end of the lead.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a socket,
In particular, it relates to a technique effectively applied to a socket for use in burn-in test of TCP (T ape C arrier P ackage ) type semiconductor device.

[0002]

2. Description of the Related Art As a semiconductor device, for example, a semiconductor device called a TCP type is known. Since this TCP type semiconductor device is manufactured by using a tape carrier in which leads are formed by etching a metal foil attached to the surface of a flexible film, a metal plate is subjected to a pressing or etching process. The thickness and the number of pins can be reduced as compared with a semiconductor device manufactured using a lead frame in which leads are formed.

A TCP type semiconductor device mainly includes a semiconductor chip having electrode pads formed on a circuit forming surface, a flexible film having leads electrically connected to the electrode pads of the semiconductor chip, and a semiconductor device. And a resin for covering the circuit forming surface of the chip. One end of the lead is connected to an electrode pad of the semiconductor chip via a protruding electrode, and the other end of the lead is drawn out of the outer periphery of the semiconductor chip. An inspection pad composed of a part of the lead is provided at the other end of the lead.

A TCP type semiconductor device is subjected to a burn-in test in the manufacturing process. In the burn-in test, the circuit operation of the semiconductor device is performed under severe use conditions (in a state where an additional condition is applied) compared to the use conditions at the customer, and defects that become defective during use by the customer, in a sense, defects are accelerated. This is a screening test aimed at eliminating defective products in the initial stage before shipping to customers.

In the burn-in test, the TCP type semiconductor device is housed in a socket while being fixedly mounted on a carrier jig, and is mounted on a burn-in board via the socket. When the socket accommodates the TCP type semiconductor device, the connection portion of the contact pin is connected to the test pad while rubbing the test pad on the other end side of the lead of the TCP type semiconductor device toward one end of the lead. It has a wiping structure. By connecting the connection part of the contact pin while rubbing the inspection pad,
Even if the surface of the inspection pad is covered with a foreign substance such as an oxide, the foreign substance can be removed and the electrical connection can be reliably obtained, so that the stability of the electrical connection can be ensured. For this type of socket, see, for example,
No. 335786 (published December 17, 1993)
It is described in.

[0006]

The present inventors have studied the above-mentioned socket and found the following problems.

The conventional socket used in the burn-in test of the TCP type semiconductor device has an inner wiping structure, so that the flexible film is warped by rubbing when the connection portion of the contact pin is connected to the test pad. Occurs. Then, since the burn-in test is performed in this state, the warpage of the flexible film is fixed by the heat during the burn-in test. Such a warp of the flexible film causes a defective lead formation in a lead forming step after the burn-in test, and the yield of the TCP type semiconductor device is significantly reduced.

An object of the present invention is to provide a socket capable of suppressing warping of a flexible film.

Another object of the present invention is to provide a technique capable of increasing the yield of semiconductor devices.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0011]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

(1) A socket for housing a semiconductor device having a lead formed on a flexible film, one end of which is connected to an electrode pad of a semiconductor chip, and the other end of which is led out to the outside of the outer periphery of the semiconductor chip. When accommodating the semiconductor device, a connection portion of a contact pin is connected to a portion of the other end of the lead while rubbing a portion of the other end of the lead toward the tip of the other end of the lead. Outside wiping structure.

(2) In a method of manufacturing a semiconductor device, a lead formed on a flexible film, one end of which is connected to an electrode pad of a semiconductor chip, and the other end of which is drawn out of an outer periphery of the semiconductor chip. A socket for housing a semiconductor device, when housing the semiconductor device,
Prepare a socket having a structure in which a connection portion of a contact pin is connected to a part of the other end of the lead while rubbing a part of the other end of the lead toward the tip of the other end of the lead, Performing a burn-in test with the semiconductor device housed in the socket.

According to the above-mentioned means (1), the flexible film is pulled outward by rubbing when connecting the connection portion of the contact pin to a part (for example, a test pad) on the other end side of the lead. In addition, warpage of the flexible film can be suppressed.

According to the above-mentioned means (2), the flexible film is pulled outward by rubbing when connecting the connection portion of the contact pin to a part (for example, an inspection pad) on the other end side of the lead. , A burn-in test can be performed in a state where warpage of the flexible film is suppressed,
Warpage of the flexible film fixed by heat during the burn-in test can be suppressed.

As a result, in the lead forming step, lead forming defects due to warpage of the flexible film can be suppressed, so that the yield of semiconductor devices can be increased.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the configuration of the present invention
A description will be given together with an embodiment in which the present invention is applied to a socket used for a burn-in test of a CP type semiconductor device. In the drawings for describing the embodiments, those having the same functions are denoted by the same reference numerals, and the repeated description thereof will be omitted. In all the drawings for describing the embodiments of the present invention, components having the same functions are denoted by the same reference numerals, and their repeated description will be omitted.

FIG. 1 is a schematic perspective view of a socket according to an embodiment of the present invention, FIG. 2 is a schematic sectional view of the socket shown in FIG. 1, and FIG. FIG. 4 is a schematic diagram for explaining the operation of a pin connecting portion, and FIG.
FIG. 5 is a schematic plan view of the CP semiconductor device, and FIG. 5 is a schematic cross-sectional view of the TCP semiconductor device shown in FIG. In addition,
In FIG. 2, the left side of the drawing shows the state when the elevating member of the socket is lowered, and the right side of the drawing shows the state when the elevating member of the socket is raised.

The TCP type semiconductor device 1 shown in FIGS. 4 and 5
0 is the metal foil attached to the surface of the flexible film.
Using a tape carrier with leads formed by etching
Manufactured. Manufacturing technology of this TCP type semiconductor device 10
Is TAB (TapeAutomated
Bonding) technology.

The TCP type semiconductor device 10 mainly includes a semiconductor chip 1, a resin 7 for covering a circuit-shaped surface 1 X which is a surface of the front and back surfaces of the semiconductor chip 1, and a plurality of resin chips on a surface of the flexible film 5. And the tape carrier 6 on which the leads 4 are formed.

The tape carrier 6 has a structure in which a unit lead pattern including a plurality of leads 4 is repeatedly formed in the longitudinal direction of the flexible film 5 on the surface of the flexible film 5 having a fixed width. The tape carrier 6 is cut for each unit lead pattern in a semiconductor device manufacturing process. The lead pattern is formed by attaching a metal foil to one surface of the flexible film 5 via an adhesive and then etching the metal foil. As the flexible film 5, a flexible film made of, for example, a polyimide resin having a thickness of 75 [μm] is used. As the metal foil, for example, a copper foil having a thickness of 35 [μm] is used.

On both sides of the flexible film 5, perforation holes 5A used for moving the tape carrier 6 are provided at regular intervals. On both sides of the flexible film 5, positioning holes 5B used for positioning the flexible film 5 in a manufacturing process are provided.

The planar shape of the semiconductor chip 1 is rectangular, and in the present embodiment, for example, 8.4 [mm] × 1
It is formed in a rectangle of 3.4 [mm]. The semiconductor chip 1 has, for example, a 64-megabit DR as a storage circuit.
AM is installed.

Each of the plurality of leads 4 is divided into two lead groups. The leads 4 of one lead group are arranged along one of the two long sides of the semiconductor chip 1 facing each other, and the leads 4 of the other lead group are arranged along the two long sides of the semiconductor chip 1 facing each other. They are arranged along the other long side of the sides. One end of each of the plurality of leads 4 extends on the circuit forming surface 1 </ b> X of the semiconductor chip 1 via the flexible film 5, and the other end of each of the plurality of leads 4 is outside the semiconductor chip 1. It is pulled out to the outside of the surroundings. The other end of each of the plurality of leads 4 is connected to an elongated hole 5 provided in a flexible film 5 outside the semiconductor chip 1.
C, and each of the other end portions is supported by the flexible film 5.

An inspection pad 4A, which is a part of each of the leads 4, is provided at the other end of each of the plurality of leads 4.

An electrode pad 2 is formed at the center of the circuit forming surface 1X of the semiconductor chip 1. The plurality of electrode pads 2 are arranged along the long side direction of the semiconductor chip 1.

The tip of each of the plurality of leads 4 at one end side is connected to each of the electrode pads 2 of the semiconductor chip 1 by the protruding electrodes 3.
Are electrically and mechanically connected to each other. As the protruding electrode 3, for example, an Au bump formed by a ball bonding method on the electrode pad 2 of the semiconductor chip 1 is used. The connection between each of the electrode pads 2 and the tip of one end of each of the plurality of leads 4 is performed by thermocompression bonding. The electrode pad 2 is formed on the uppermost wiring layer of the multilayer wiring layers of the semiconductor chip 1, and is formed of a metal film such as an aluminum (Al) film or an aluminum alloy film.

As the resin 7, for example, a thermosetting resin obtained by adding an organic solvent to an epoxy-based resin is applied to the circuit forming surface 1X of the semiconductor chip 1 by a potting method, and then heat-treated to cure the thermosetting resin. Formed.

In the TCP type semiconductor device, when the product is shipped in the state shown in FIGS. 4 and 5, the lead is formed into a predetermined shape (for example, a gull wing shape). The product may be shipped with it mounted. When shipping in the state shown in FIGS. 4 and 5, lead molding is performed before mounting on a mounting board. In the present embodiment, a TCP type semiconductor device that is shipped while mounted on a mounting board is described. Therefore, the manufacture of the TCP semiconductor device of the present embodiment includes a lead forming step.

The TCP type semiconductor device 10 of the present embodiment is
A protruding electrode 3 made of an Au bump is mainly formed on an electrode pad 2 of a semiconductor chip 1 by a ball bonding method.
Then, the protruding electrodes 3 are formed on the electrode pads 2 of the semiconductor chip 1.
The tip of one end of the lead 4 of the tape carrier 6 is connected by thermocompression bonding with a bonding tool via
The circuit forming surface 1X of the semiconductor chip 1 is covered with the resin 7, the tape carrier 6 is cut for each lead pattern, thereafter, a burn-in test is performed, and then an electrical characteristic test is performed. , And thereafter, the lead 4 is formed into, for example, a gull wing shape, and thereafter, an excess portion of the tape carrier 6 is cut off. By performing the step of cutting the tape carrier 6 for each lead pattern, the tape carrier 6 has a function as a device. Therefore, in the following manufacturing process, the description will be made as a TCP type semiconductor device for convenience in this specification.

In the burn-in test, the TCP type semiconductor device 10 is housed in the socket 20 while being fixed to the carrier jig 15 as shown in FIG. That is,
The socket 20 has a structure in which the carrier jig 15 to which the TCP type semiconductor device 10 is mounted and fixed is housed. As shown in FIGS. 1 and 2, the socket 20 has an external appearance mainly including a base member 21, an elevating member 22 having a frame structure, and two opening / closing members 23. Each of these members is formed of an insulating resin or the like.

On the base member 21, a plurality of contact pins 24 connected to (contacting with) the test pads 4A provided on the other end side of the leads of the TCP type semiconductor device 10 are attached in a line in two rows. Have been. As shown in FIG. 3, the contact pin 24 includes a pin main body 24 </ b> A that penetrates vertically through the base member 21 and a pin main body 2.
4A, and has a bent bent portion 24B protruding laterally in a substantially U-shape, and a connecting portion 24C protruding upward from an intermediate portion of the bent portion 24B. The contact pins 24 are formed of, for example, spring steel such as phosphor bronze. The contact pin 24
It may be formed by bending a thin spring steel, or may be formed by punching a plate material having a desired thickness. In addition,
The contact pins 24 are plated with gold on the surface.

As shown in FIG. 1, the lower end of the pin body 24A protrudes from the lower surface of the base member 21 by a predetermined length.
Further, the bending allowance portion 24B and the connection portion 24C protrude from the upper surface of the base member 21, and when the lifting member 22 is lowered toward the base member 21, it is pressed downward by the lower surface of the lifting member 22 and gradually bends. No.

The two opening / closing members 23 are provided at positions facing each other. The two opening / closing members 23 are the lifting members 2
2 is opened outward when lowered, and closed when the lifting member 22 is raised. The storage of the carrier jig 15 is performed by opening the two opening and closing members 23 outward, and the holding and fixing of the carrier jig 15 is performed by closing the two opening and closing members 23.

The connecting portion 24C of the contact pin 24 is
This is performed by raising the elevating member 22. At this time, the connection portion 24C of the contact pin 24 is connected to the test pad 4A while rubbing the test pad 4A at the other end of the lead 4 toward the tip of the other end of the lead 4 of the TCP type semiconductor device 10. You. That is, the socket 20
When accommodating the P-type semiconductor device 10, the contact pins 24 are rubbed against the test pads 4A on the other end of the lead 4 while rubbing the test pads 4A on the other end of the lead 4 toward the other end of the lead 4. Has an outer wiping structure to which the connecting portion 24C is connected. With such an outer wiping structure, the inspection pad 4A on the other end side of the lead 4 is provided.
When the connecting portion 24C of the contact pin 24 is connected, the flexible film 5 is pulled outward by rubbing, so that warpage of the flexible film 5 can be suppressed.

Further, by performing a burn-in test of the TCP type semiconductor device 10 using the socket 20 having such an outer wiping structure, the connection portion 24C of the contact pin 24 is connected to the test pad 4A at the other end of the lead 4. Since the flexible film 5 is pulled to the outside by the rubbing at the time of connection, the burn-in test can be performed in a state where the warp of the flexible film 5 is suppressed, and the flexible film 5 is fixed by heat during the burn-in test. Warpage of the flexible film 5 can be suppressed.

As a result, in the lead forming step, lead forming defects due to warpage of the flexible film 5 can be suppressed, so that the yield of the TCP type semiconductor device 10 can be increased.

In this embodiment, the flexible film 5
Although the example using the inner wiping structure has been described as means for suppressing the warpage of the base member 21, as shown in FIG.
Alternatively, a structure may be adopted in which a holding member 25 for holding the chip portion of the TCP semiconductor device 10 is provided. With such a structure, the same effect as the outer wiping structure can be obtained even with the inner wiping structure.

As described above, the invention made by the present inventor is:
Although specifically described based on the embodiment, the present invention
It is needless to say that the present invention is not limited to the above-described embodiment, but can be variously modified without departing from the scope of the invention.

[0040]

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows. According to the present invention, warpage of the flexible film can be suppressed. According to the present invention, the yield of semiconductor devices can be increased.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view of a socket according to an embodiment of the present invention.

FIG. 2 is a schematic sectional view of the socket shown in FIG.

FIG. 3 is a schematic diagram for explaining an operation of a connection portion of a contact pin in the socket shown in FIG.

4 is a schematic plan view of a TCP type semiconductor device housed in the socket shown in FIG.

5 is a schematic sectional view of the TCP type semiconductor device shown in FIG.

FIG. 6 is a schematic diagram for explaining a modification of one embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip, 2 ... Electrode pad, 3 ... Protruding electrode,
DESCRIPTION OF SYMBOLS 4 ... Lead, 4A ... Inspection pad, 5 ... Flexible film, 6 ... Tape carrier, 7 ... Resin, 10 ... TCP type semiconductor device, 15 ... Carrier jig, 20 ... Socket, 21
... Base member, 22 elevating member, 23 opening / closing member, 24
... contact pins, 25 ... holding members.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Akira Seito 5-20-1, Josuihoncho, Kodaira-shi, Tokyo Within the Semiconductor Group, Hitachi, Ltd. No. 20-1, Hitachi Semiconductor Co., Ltd. (72) Inventor Takatoshi Hagiwara 5-2-1, Josuihonmachi, Kodaira-shi, Tokyo Within Hitachi Semiconductor Co., Ltd. (72) Inventor Hiroshi Nakajima Tokyo 5-20-1, Josuihoncho, Kodaira-shi Hitachi Semiconductor Co., Ltd. (72) Inventor Teruo Shoji 3-16-3 Higashi, Shibuya-ku, Tokyo Hitachi Electronics Engineering Co., Ltd. YA 5-20-1, Josuihoncho, Kodaira-shi, Tokyo Within the Semiconductor Group, Hitachi, Ltd. (72) Inventor Yuji Wada East 5-20-1, Josuihonmachi, Kodaira-shi, Kyoto Within Hitachi, Ltd. Semiconductor Group

Claims (4)

[Claims] 1. A socket for receiving a semiconductor device having a lead formed on a flexible film, one end of which is connected to an electrode pad of a semiconductor chip, and the other end of which is led out to the outer periphery of the semiconductor chip. When the semiconductor device is housed, the connection part of the contact pin is connected to a part of the other end of the lead while rubbing a part of the other end of the lead toward the other end of the lead. A socket characterized by having a structure. 2. The socket according to claim 1, wherein said socket has a structure for accommodating a carrier jig on which said semiconductor device is mounted. 3. The socket according to claim 1, wherein the contact pin has a pin main body, a bent allowance portion connected to the pin main body, and the connection portion protruding upward from an intermediate portion of the flex allowance portion. A socket having a structure having: 4. A test of the semiconductor device is performed by using a socket for housing a semiconductor device having one end connected to an electrode pad of a semiconductor chip and the other end extending to the outside of the outer periphery of the semiconductor chip. A method of manufacturing a semiconductor device comprising the steps of: (a) when housing the semiconductor device, rubbing a part of the other end of the lead toward a tip of the other end of the lead; A method of preparing a socket having a structure in which a connection portion of a contact pin is connected to the socket, and performing a burn-in test with the semiconductor device housed in the socket.