JP2001168051A - Method and apparatus of controlling up and down temperature for semiconductor substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of controlling up and down temperatures for preventing a crack even when a semiconductor substrate with different up and down temperature characteristics is stored in a treatment furnace and the temperature thereof is made up or down. SOLUTION: When the semiconductor substrate is treated under the control of up down temperatures in oxidation, diffusion or DVD processes, the temperatures at positions of the semiconductor substrate are measured until a given time passed from the inserting point of the substrate in the treatment furnace at the temperature. A temperature increasing rate and an in-face temperature distribution are calculated from the measured results to judge the up and down temperature characteristics. Then, a temperature control program adequate for the up and down temperature characteristics is selected automatically from one or more kinds of temperature control programs previously formed according to various kinds of semiconductor substrates of different up and down temperature characteristics. As a result, the semiconductor substrate is treated under up and down temperature control on the basis of the selected temperature control program.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for controlling the temperature of a semiconductor substrate such as a silicon wafer when the substrate is subjected to oxidation, diffusion, CVD, or the like.

[0002]

2. Description of the Related Art A semiconductor substrate has different temperature rising / falling characteristics, that is, a temperature rising / falling rate and an in-plane temperature distribution width during temperature rising / falling, depending on a material, thickness and physical properties. In particular, silicon wafers have different temperature rise / fall characteristics only by differences in the dopant concentrations of boron, phosphorus, antimony, and the like therein. Conventionally, temperature control of a semiconductor substrate associated with oxidation, diffusion, CVD processing, etc. is performed by introducing a semiconductor substrate into a processing furnace set to a temperature actually used and measuring the temperature of the semiconductor substrate. Temperature rise and fall characteristics, and then, based on the collected data, create temperature rise and fall temperature control programs, respectively, and process only with a specific temperature control program that is compatible with semiconductors with particular rise and fall characteristics This is done using a furnace.

[0003]

However, in the conventional method of controlling the temperature of a semiconductor substrate, the temperature of the semiconductor substrate is controlled based on a specific temperature control program suitable for a semiconductor substrate having a certain temperature characteristic. Therefore, if a semiconductor substrate having different temperature rising and falling characteristics is erroneously introduced into the processing furnace and heated up and down based on this specific temperature control program, the semiconductor substrate will be subjected to thermal stress, and as a result,
Problems such as cracking of the semiconductor substrate, destruction of the constituent members of the processing furnace, and shutdown of the processing apparatus may occur, which may cause a reduction in production efficiency and an increase in production cost.
Therefore, the present invention provides a semiconductor substrate temperature raising / lowering control method and apparatus which do not cause cracking of a semiconductor substrate even when semiconductor substrates having different temperature raising / lowering characteristics are introduced into a processing furnace to raise / lower the temperature. Aim.

[0004]

According to a first aspect of the present invention, there is provided a method for controlling a temperature rise and fall of a semiconductor substrate according to the present invention. The temperature of multiple locations on the semiconductor substrate is measured from the introduction of the semiconductor substrate into the processing furnace at the required temperature until the required time elapses, and the temperature rise rate and in-plane temperature distribution width are calculated from the measured values, and the temperature rise / fall characteristics Is automatically selected from one or more kinds of temperature control programs created in advance corresponding to various semiconductor substrates having different temperature rise / fall characteristics,
The temperature of the semiconductor substrate is controlled to rise and fall based on the selected temperature control program. The second method for controlling temperature rise and fall of a semiconductor substrate includes oxidizing, diffusing,
In controlling the temperature rise and fall with the VD process, etc., the infrared absorption coefficient of the semiconductor substrate is measured before or after the semiconductor substrate is introduced into a processing furnace having a required temperature, and the temperature rise rate and the in-plane temperature of the semiconductor substrate are measured based on the measured values. The distribution width is estimated, the temperature rise / fall characteristics are determined, and a temperature control program suitable for the temperature rise / fall characteristics is automatically selected from various temperature control programs created in advance corresponding to various semiconductor substrates having different temperature rise / fall characteristics. And the temperature of the semiconductor substrate is controlled to rise and fall based on the selected temperature control program. It is preferable that the temperature of the processing furnace at the time of introducing the semiconductor substrate is approximately halfway between the room temperature and the maximum heating temperature of the semiconductor substrate.

On the other hand, a first semiconductor substrate temperature raising / lowering control device is a device for controlling the temperature raising / lowering of a semiconductor substrate in accordance with oxidation, diffusion, CVD processing and the like.
A processing furnace for performing a CVD process or the like, a disk-shaped horizontal heater disposed at a lower portion in the processing furnace, a holder rotatably disposed above the heater and horizontally holding the semiconductor substrate, and At least three elevating pins that horizontally support the semiconductor substrate introduced into the upper part of the semiconductor substrate and move up and down to be placed on the holder, and a plurality of substrate thermometers that are provided in the processing furnace and measure the temperature of the semiconductor substrate; Input and output of the measured value of each substrate thermometer, calculate the temperature rise rate within the required time and the in-plane temperature distribution width, and determine the temperature rise / fall temperature characteristics. While storing one or more kinds of temperature control programs created in advance corresponding to the semiconductor substrate, a temperature control program that matches the temperature rise / fall characteristic determined by the temperature rise / fall characteristic determination means from these temperature control programs is stored. Select the ram, characterized in that the output of the heater and a heater output control means for controlling while inputting the measurement values of the thermometer for a substrate on the basis of the selected temperature control program. Further, the second semiconductor substrate temperature raising / lowering control device is a device for controlling the temperature rising / falling of the semiconductor substrate along with oxidation, diffusion, CVD processing, etc., and a processing furnace for performing oxidation, diffusion, CVD processing, etc. on the semiconductor substrate. A disk-shaped horizontal heater arranged at the lower part in the processing furnace, a holder rotatably arranged above the heater and holding the semiconductor substrate horizontally, and a semiconductor introduced into the upper part of the processing furnace At least three elevating pins that support the substrate horizontally and move up and down to be mounted on the holder; and
A plurality of substrate thermometers for measuring the temperature of the semiconductor substrate, a cassette arranged on the side of the processing furnace and having a large number of semiconductor substrates stacked in multiple stages, and a semiconductor substrate transferred from the cassette to an upper part in the processing furnace. A transfer device for introducing the semiconductor substrate, an infrared absorption coefficient measuring device provided on a movement path of the semiconductor substrate from a position taken out of the cassette to a transfer to the elevating pin, and measuring an infrared absorption coefficient of the semiconductor substrate; Input / output values measured by an absorption coefficient measuring device, estimating a temperature rise rate and an in-plane temperature distribution width in a required time of a semiconductor substrate to determine its temperature rise / fall temperature characteristics, and various temperature rise / fall characteristics different from each other. While various temperature control programs created in advance corresponding to the semiconductor substrate are stored, the temperature control program suitable for the temperature rise / fall characteristics determined by the temperature rise / fall temperature characteristic determination means from these temperature control programs is stored. Select the temperature control program that,
A heater output control means for controlling the output of the heater based on the selected temperature control program while inputting the measured value of the substrate thermometer is provided. The thermometer is preferably an infrared radiation thermometer.

In the first method for controlling the temperature rise and fall of the semiconductor substrate and the apparatus therefor, the temperature rise and fall characteristics of the semiconductor substrate are determined after the semiconductor substrate is introduced into the processing furnace, and a temperature control program adapted to the determined temperature rise and fall characteristics is previously determined. One or more of the created temperature control programs are selected, and the output of the heater is controlled based on the selected one to increase or decrease the temperature. In the second method for controlling the temperature rise and fall of the semiconductor substrate and the apparatus therefor, the temperature rise and fall characteristics of the semiconductor substrate are determined before or after introduction into the processing furnace, and a temperature control program adapted to the determined temperature rise and fall characteristics is provided. The temperature is selected from among various temperature control programs created in advance, and the output of the heater is controlled based on the selected temperature control program to raise or lower the temperature.

[0007]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram showing a first embodiment of a semiconductor substrate temperature rise / fall control apparatus according to the present invention. In the drawing, reference numeral 1 denotes a processing furnace for performing various processes such as an oxidation process, a diffusion process, and a CVD process on a semiconductor substrate W such as a silicon wafer. It is provided airtight. In the lower part of the processing furnace 1, a disc-shaped heater 2 is horizontally disposed, and a holder 3 for horizontally holding the semiconductor substrate W is disposed in proximity to the heater 2 above. The heater 2 is rotatably supported by a rotating shaft 4 passing through the bottom wall of the processing furnace 1.

In the processing furnace 1, a transfer device (not shown) horizontally supports the semiconductor substrate W introduced into the introduction position P ₁ in the upper part of the internal space thereof, and
There are provided at least three lifting pins 5 which are inserted into the holder 3, the heater 2 and the bottom wall of the processing furnace 1 to be lifted and lowered. Further, the processing furnace 1 is provided with a plurality of substrate infrared radiation thermometers 6 for measuring the temperature at a plurality of locations on the front surface of the semiconductor substrate W, while the substrate for measuring the temperature on the back surface of the semiconductor substrate W is provided. Infrared radiation thermometer 7 is provided at the bottom.

Reference numeral 8 denotes a signal input to the measurement values of the infrared radiation thermometers 6 and 7 for the substrates, and the semiconductor substrate W within a required time.
Temperature rise / fall characteristic judging means for calculating the temperature rise rate and the in-plane temperature distribution width to determine the temperature rise / fall temperature characteristics. Reference numeral 9 denotes one type prepared in advance corresponding to various semiconductor substrates W having different temperature rise / fall characteristics. Alternatively, while storing a plurality of types of temperature control programs, a temperature control program matching the determined temperature rise / fall characteristic is selected from the temperature control programs by inputting the determination signal of the temperature rise / fall temperature characteristic determination means 8. The heater output control means controls the output of the heater 2 based on the selected temperature control program while inputting the signals of the measured values of the infrared radiation thermometers 6 and 7 for the substrate.

In order to control the temperature rise and fall of various semiconductor substrates W by the semiconductor substrate temperature rise and fall controller having the above-mentioned structure, first,
The temperature rise / fall characteristics (temperature rise rate and in-plane temperature distribution width within a predetermined time) of various semiconductor substrates W are measured, and one or more kinds of temperature control programs suitable for the respective temperature rise / fall characteristics are created in advance. The temperature control programs are stored in the heater output control means 9. Next, the inside of the processing furnace 1 is replaced with an appropriate atmospheric gas, and
Accordingly, the temperature is set to a substantially intermediate temperature between the room temperature and the maximum heating temperature of the semiconductor substrate W, for example, 520 ° C. Next, as shown in FIG. 2, the semiconductor substrate W introduced into the processing furnace 1 by the transfer device is supported at the introduction position P ₁ (indicated by a solid line in FIG. 1) by the elevating pins 5 for a required time, for example, 10 seconds. While preheating is performed, the temperature of a plurality of locations on the semiconductor substrate W is measured by the plurality of infrared radiation thermometers 6 and 7 for the substrate during this time, and the signals of the measured values are sent to the temperature rise / fall characteristic determination means 8.
After calculating the temperature rise rate and the in-plane temperature distribution width to determine the temperature rise / fall characteristics, a signal of the determination is output together with a signal of the measured value of the temperature of the semiconductor substrate W when the required time elapses. 9 is output.

In the heater output control means 9, the semiconductor substrate W is heated to a predetermined temperature when the required time elapses.
For example, when the temperature is 640 ° C. or more, the semiconductor substrate W is moved to the heating position P ₂
After moving to (shown by a two-dot chain line in FIG. 1), a temperature control program adapted to the temperature rise / fall characteristics input from the temperature rise / fall characteristics determination means 8 is stored in one or more temperature control programs stored in advance. The semiconductor substrate W is automatically selected from among them, and based on the selected temperature control program, the output of the heater 2 is controlled while inputting the signal of the measurement value of the infrared radiation thermometers 6 and 7 for the substrate to control the temperature of the semiconductor substrate W. I do. On the other hand, when the required time elapses, the semiconductor substrate W has a required temperature,
For example, when the temperature is lower than 640 ° C., the semiconductor substrate W is held at the introduction position P ₁ for a further required time, for example, 15 seconds, and the preliminary heating is continued. Go to the heating position P _2, and thereafter, automatically from the one or more temperature control program previously stored compatible temperature control program to heating and cooling characteristics input from decreasing the temperature characteristics determining means 8 Based on the selected temperature control program, the output of the heater 2 is controlled while inputting the signals of the measurement values of the infrared radiation thermometers 6 and 7 for the substrate to control the temperature of the semiconductor substrate W up and down.

[0012] Also, to decreasing the temperature controlling various semiconductor substrate W by decreasing the temperature control apparatus of a semiconductor substrate having the above structure, when determining the heating and cooling characteristics by the time required position the semiconductor substrate W to the introduction position P ₁ First, as in the case described above, first, the temperature rise / fall characteristics (temperature rise rate and in-plane temperature distribution width within a required time) of various semiconductor substrates W are measured, and are adapted to the respective temperature rise / fall characteristics. After preparing various temperature control programs in advance and storing those temperature control programs in the heater output control means 9, the inside of the processing furnace 1 is replaced with an appropriate atmosphere gas, and the temperature of the semiconductor is changed to room temperature by the heater 2. The substrate W is kept at a constant temperature approximately halfway from the maximum heating temperature, for example, 550 ° C. Next, as shown in FIG. 3, the semiconductor substrate W introduced into the processing furnace 1 by the transfer device is supported by the elevating pins 5, and the introduction position P
From the position ₁ to the heating position P ₂ , the temperature of a plurality of portions of the semiconductor substrate W is measured by the plurality of substrate infrared radiation thermometers 6 and 7 during a required time, for example, 5 seconds, at this position. At the same time, the signals of these measured values are input to the temperature rise / fall characteristic determination means 8 to calculate the temperature rise rate and the in-plane temperature distribution width to determine the temperature rise / fall characteristics. Is output to the heater output control means 9 together with the signal of the measured value of the temperature of the semiconductor substrate W in the step (c).

In the heater output control means 9, if the semiconductor substrate W has reached a constant furnace temperature, for example, 550 ° C. after the required time has elapsed, it conforms to the temperature rise / fall characteristics inputted from the temperature rise / fall characteristics determination means 8. The temperature control program to be performed is automatically selected from among various temperature control programs stored in advance, and the output of the heater 2 is measured by the infrared radiation thermometers 6 and 7 for the board based on the selected temperature control program. The temperature of the semiconductor substrate W is controlled by inputting and controlling the temperature of the semiconductor substrate W. On the other hand, when the required time elapses, the semiconductor substrate W is kept at a constant furnace temperature, for example, 550 ° C.
If you have not reached, further required time to the heating position P _2, after holding for example 30 seconds, decreasing the temperature characteristics determining means 8
Automatically selects from among various stored temperature control programs a temperature control program that matches the temperature rise / fall characteristics inputted from the computer, and outputs the output of the heater 2 based on the selected temperature control program. While the signals of the measured values of the thermometers 6 and 7 are input, the temperature of the semiconductor substrate W is controlled to rise and fall.

In the above-described embodiment, the case where the substrate infrared radiation thermometer 7 is provided also in the lower part of the processing furnace 1 has been described. It may be only six.

FIG. 4 is a schematic diagram showing a second embodiment of the semiconductor substrate temperature raising / lowering control apparatus according to the present invention. In the figure, reference numeral 11 denotes an oxidation process, a diffusion process, and a CVD process on a semiconductor substrate W such as a silicon wafer, as in the first embodiment.
A processing furnace for performing various kinds of processing such as processing, and an inner space thereof is usually provided in an airtight manner to supply and discharge atmospheric gas and the like. In the lower part of the processing furnace 11, a disk-shaped heater 12 is provided.
Are horizontally arranged, and a holder 13 for horizontally holding the semiconductor substrate W is arranged in the vicinity of the heater 12, and the holder 13 has a rotating shaft 14 inserted through the heater 12 and the bottom wall of the processing furnace 11. And rotatably provided.

Further, the processing furnace 11 horizontally supports a semiconductor substrate W introduced into an upper part of its internal space by a transfer device to be described later, and has a holder 13, a heater 12, and a heater 12. At least three elevating pins 15 are provided which are inserted into the bottom wall of the processing furnace 11 and move up and down. Further, the processing furnace 11 is provided with a plurality of infrared radiation thermometers 16 for measuring the temperatures of a plurality of portions of the semiconductor substrate W at an upper portion.

On the other hand, a cassette chamber 17 is provided on the side of the processing chamber 11, and a cassette 18 in which a large number of semiconductor substrates W are stacked in multiple stages is accommodated in the cassette chamber 17. The cassette chamber 17 and the processing furnace 11 are connected by a transfer chamber 19, and the cassette 1 is placed in the transfer chamber 19.
A transfer device 20 for transferring the semiconductor substrate W from 8 and introducing the semiconductor substrate W to an upper portion in the processing furnace 11 is provided. In the vicinity of the processing furnace 11 in the transfer chamber 19, the semiconductor substrate W
Absorption coefficient measuring device 21 for measuring infrared absorption coefficient of
Is provided, and the infrared absorption coefficient measuring device 21
An infrared radiator 21a provided to face the semiconductor substrate W by the transfer device 20 with a moving path therebetween;
And an infrared detector 21b for detecting infrared light transmitted through the infrared detector.

Numeral 22 designates a temperature rise / fall characteristic determining means for inputting the measured value of the infrared absorption coefficient measuring device 21 and estimating the temperature rise rate and the in-plane temperature distribution width of the semiconductor substrate W to determine the temperature rise / fall characteristics. The determination signal is output to the heater output control means described later. Here, the relationship between the infrared absorption coefficient and the resistivity of the semiconductor substrate W (the resistivity is inversely proportional to the dopant concentration) has a relationship that the infrared absorption coefficient increases as the resistivity decreases, as shown in FIG. is there. On the other hand, a semiconductor substrate W _{1 having} a large infrared absorption coefficient (for example, a boron heavy-doped silicon wafer (resistivity: 0.015Ω ·
cm) and a boron heavy-doped silicon wafer with a backside oxide film (resistivity: ０．０１0.015 Ω · cm) and a semiconductor substrate W _{2 having} a small infrared absorption coefficient (for example, boron light-doped silicon wafer (resistivity: Ω10 Ω · cm)) )
Is introduced into a processing furnace maintained at a predetermined temperature, for example, 550 ° C., and the temperature of the semiconductor substrate W is measured by an infrared radiation thermometer. As shown in FIG. 6, in the former, infrared rays are absorbed and the temperature rises rapidly. In the latter, it becomes constant at the holding temperature, and the width of the in-plane temperature distribution is small, but in the latter, infrared rays are hardly absorbed and the temperature rise is gradual, and after the temperature temporarily rises above the holding temperature, it becomes constant at the holding temperature, In addition, the apparent in-plane temperature distribution width becomes large (since infrared light transmitted through the semiconductor substrate is detected by the infrared radiation thermometer), and it can be seen that the temperature rise / fall characteristics of both are correlated with the infrared absorption coefficient. Therefore, it is possible to estimate the temperature rise rate and the in-plane temperature distribution width in the required time from the infrared absorption coefficient of the semiconductor substrate W and determine the temperature rise / fall characteristics.

Reference numeral 23 stores various temperature control programs prepared in advance corresponding to various semiconductor substrates W having different temperature rising / falling characteristics, and from among these temperature control programs, the determination of the temperature rising / falling temperature determination means 22 is performed. A signal is selected to select a temperature control program that matches the temperature rise / fall characteristics determined. Based on the selected temperature control program, the output of the heater 12 is input to the signal of the measured value of the infrared radiation thermometer 16 for the board. This is a heater output control means for controlling while performing.

In order to control the temperature rise and fall of various semiconductor substrates W by the semiconductor substrate temperature rise and fall controller having the above-mentioned structure, first,
The temperature rise / fall characteristics (temperature rise rate and in-plane temperature distribution width within a predetermined time) of various semiconductor substrates W are measured, and various temperature control programs suitable for the respective temperature rise / fall characteristics are created in advance. The temperature control program is stored in the heater output control means 23. Next, the processing furnace 11
The inside is replaced with an appropriate atmosphere gas, and the temperature is kept by the heater 12 at a temperature approximately halfway between the room temperature and the maximum heating temperature of the semiconductor substrate W, for example, 600 ° C. Next, the semiconductor substrate W is transferred from the cassette 18 by the transfer device 20,
As shown in FIG. 7, the infrared absorption coefficient of the semiconductor substrate W is measured by the infrared absorption coefficient measuring device 21 during the introduction into the processing furnace 11, and the signal of the measured value is determined by the temperature rise / fall characteristic determining means 22.
After that, the semiconductor substrate W is introduced into the processing chamber 11,
The semiconductor substrate W is placed on the holder 13 by being supported by the lift pins 15 and lowered.

On the other hand, the temperature rise / fall characteristic judging means 22 receives the signal of the measured value from the infrared absorption coefficient measuring device 21 and determines the temperature rise rate of the semiconductor substrate W in the required time according to the presence or absence of infrared detection or the magnitude of the infrared absorption coefficient. After estimating the temperature rise and fall characteristics by estimating the in-plane temperature distribution width, a determination signal is output to the heater output control means 23. And
The heater output control means 23 automatically selects a temperature control program suitable for the temperature rise / fall characteristic inputted from the temperature rise / fall characteristic determination means 22 from among the temperature control programs stored in advance, and sets the selected temperature control program to the selected temperature control program. Based on this, the output of the heater 12 is controlled while inputting the signal of the measured value of the infrared radiation thermometer 16 for the substrate to control the temperature of the semiconductor substrate W up and down.

In the above-described embodiment, the case where the infrared absorption coefficient measuring device 21 is provided near the processing furnace 11 in the transfer chamber 19 has been described. However, the present invention is not limited to this. In addition, a plurality of infrared radiation thermometers 1 provided in the processing furnace 11
6 and the heater 12 may be used as an infrared absorption coefficient measuring device.

[0023]

As described above, according to the first method for controlling temperature rise and fall of a semiconductor substrate and the apparatus therefor according to the first aspect of the present invention, the temperature rise and fall characteristics of a semiconductor substrate are determined after introduction into a processing furnace. The temperature control program suitable for the temperature rise / fall characteristics is selected from one or more temperature control programs created in advance, and the output of the heater is controlled based on the selected temperature control program. Even if the temperature of the semiconductor substrate is raised by introducing the semiconductor substrate into the processing furnace, cracking of the semiconductor substrate does not occur as in the related art, and thus, the production efficiency can be improved and the production cost can be reduced.
According to the second method for controlling temperature rise and fall of a semiconductor substrate and the apparatus therefor, the temperature rise and fall characteristics of the semiconductor substrate are determined before or after introduction into the processing furnace, and the temperature control program adapted to the determined temperature rise and fall characteristics Is selected from various temperature control programs created in advance, and the temperature of the heater is controlled by controlling the output of the heater based on the selected temperature control program. The effect is obtained.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing a first embodiment of a semiconductor substrate temperature rise / fall control device according to the present invention.

FIG. 2 is a flowchart showing an example of an embodiment of a method for controlling temperature rise and fall of a semiconductor substrate by the apparatus of FIG. 1;

FIG. 3 is a flowchart showing another example of the embodiment of the semiconductor substrate temperature raising / lowering control method using the apparatus of FIG. 1;

FIG. 4 is a schematic configuration diagram showing a second embodiment of a semiconductor substrate temperature rise / fall control apparatus according to the present invention.

FIG. 5 is an explanatory diagram showing a relationship between a resistivity of a semiconductor substrate and an infrared absorption coefficient.

FIG. 6 is an explanatory diagram showing the temperature and the in-plane temperature distribution width over time when a semiconductor substrate having a large infrared absorption coefficient and a semiconductor substrate having a small infrared absorption coefficient are heated.

FIG. 7 is a flowchart showing an example of an embodiment of a method for controlling temperature rise and fall of a semiconductor substrate by the apparatus of FIG. 4;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Processing furnace 2 Heater 3 Holder 5 Elevating pin 6 Infrared radiation thermometer for substrate 7 Infrared radiation thermometer for substrate 8 Heating / lowering temperature characteristic judging means 9 Heater output control means 11 Processing furnace 12 Heater 13 Holder 15 Elevating pin 16 Infrared radiation thermometer DESCRIPTION OF SYMBOLS 18 Cassette 20 Transfer device 21 Infrared absorption coefficient measuring device 22 Temperature rise / fall characteristic determination means 23 Heater output control means

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/205 H01L 21/205 (72) Inventor Tadashi Ohashi 30 Soya, Hadano-shi, Kanagawa Toshiba Ceramics Corporation Within the Development Laboratory (72) Inventor Katsuyuki Iwata 30 Soya, Hadano-shi, Kanagawa Prefecture Inside the Research Laboratory, Toshiba Ceramics Co., Ltd. (72) Inventor Hiroyuki Saito 30 Soya, Hadano-shi, Kanagawa Prefecture, within the Development Laboratory Toshiba Ceramics Corporation (72) Inventor Shinichi Mitani 2068-3 Ooka, Numazu-shi, Shizuoka Toshiba Machine Co., Ltd. (72) Inventor Yasuaki Honda 2068-3 Ooka, Numazu-shi, Shizuoka Toshiba Machine Co., Ltd. (72) Inventor Hideki Arai Ooka, Numazu-shi, Shizuoka 2068-3 Toshiba Machine Co., Ltd. (72) Inventor Yoshitaka Murofushi 2068-3 Ooka Ooka, Numazu City, Shizuoka Prefecture Inside Machinery Co., Ltd. (72) Inventor Kunihiko Suzuki 2068-3 Ooka, Numazu-shi, Shizuoka Toshiba Machinery Co., Ltd. (72) Inventor Hidenori Takahashi 2068-3, Ooka, Numazu-shi, Shizuoka Pref. Toshiba Machinery Co., Ltd. (72) Inventor Ito Hideki 2068-3 Ooka, Numazu-shi, Shizuoka Toshiba Machine Co., Ltd. (72) Inventor Hirofumi Katsumata 2068-3, Ooka, Numazu-shi, Shizuoka Toshiba Machine Co., Ltd. F-term (reference) EN04 GB05 GB16

Claims (6)

[Claims] When controlling the temperature of a semiconductor substrate in accordance with oxidation, diffusion, CVD processing, etc., the temperature of a plurality of locations on the semiconductor substrate from the introduction of the semiconductor substrate into a processing furnace at a required temperature until the required time elapses. Measure, calculate the temperature rise rate and the in-plane temperature distribution width from the measured value, determine the temperature rise / fall characteristics, and apply a temperature control program suitable for the temperature rise / fall characteristics to various semiconductor substrates with different temperature rise / fall characteristics Automatically selecting from one or more types of temperature control programs created in advance and controlling the temperature of the semiconductor substrate based on the selected temperature control program. Method. 2. When the semiconductor substrate is subjected to temperature rise / fall control along with oxidation, diffusion, CVD processing, etc., before or after introducing the semiconductor substrate into a processing furnace at a required temperature, an infrared absorption coefficient of the semiconductor substrate is measured. Estimate the temperature rise rate and in-plane temperature distribution width in the required time of the semiconductor substrate based on the measured values, determine its temperature rise / fall characteristics, and apply a temperature control program suitable for the temperature rise / fall characteristics to various semiconductor substrates with different temperature rise / fall characteristics A temperature control method for a semiconductor substrate, wherein the temperature is automatically selected from among various temperature control programs created in advance corresponding to the temperature control and the temperature of the semiconductor substrate is controlled based on the selected temperature control program. 3. The method according to claim 1, wherein the temperature of the processing furnace at the time of introducing the semiconductor substrate is substantially intermediate between room temperature and the maximum heating temperature of the semiconductor substrate. . 4. An apparatus for controlling temperature rise and fall of a semiconductor substrate in association with oxidation, diffusion, CVD processing, etc., comprising: a processing furnace for performing oxidation, diffusion, CVD processing, etc. on a semiconductor substrate; and a lower part in the processing furnace. Disk-shaped horizontal heater, a holder that is rotatably arranged above the heater and holds the semiconductor substrate horizontally, and a holder that horizontally supports the semiconductor substrate introduced into the upper part of the processing furnace. At least three elevating pins for raising and lowering to be mounted, a plurality of substrate thermometers provided in the processing furnace for measuring the temperature of the semiconductor substrate, and the measured values of the respective substrate thermometers are inputted. Temperature rising / falling temperature characteristic determining means for calculating a temperature rising rate and an in-plane temperature distribution width of the semiconductor substrate to determine the temperature rising / falling characteristic, and one or more kinds prepared in advance corresponding to various semiconductor substrates having different temperature rising / falling characteristics Seed temperature control pro While storing the gram, a temperature control program that matches the temperature rise / fall characteristics determined by the temperature rise / fall temperature characteristics determination means is selected from these temperature control programs, and the output of the heater is determined based on the selected temperature control program. A heater output control means for controlling while inputting a measured value of a substrate thermometer; 5. An apparatus for raising and lowering the temperature of a semiconductor substrate in association with oxidation, diffusion, CVD processing, etc., comprising: a processing furnace for performing oxidation, diffusion, CVD processing, etc. on a semiconductor substrate; and a lower part in the processing furnace. Disk-shaped horizontal heater, a holder that is rotatably arranged above the heater and holds the semiconductor substrate horizontally, and a holder that horizontally supports the semiconductor substrate introduced into the upper part of the processing furnace. At least three elevating pins for elevating and lowering to be mounted, a plurality of substrate thermometers provided at the top of the processing furnace for measuring the temperature of the semiconductor substrate, and a number of semiconductor substrates arranged at the side of the processing furnace, Cassettes stacked in multiple stages, a transfer device that transfers semiconductor substrates from the cassettes and introduces them into the upper part of the processing furnace, and a movement path of the semiconductor substrates from a position taken out of the cassettes to a position where the semiconductor substrates are transferred to the lifting pins Provided in The infrared absorption coefficient measuring device that measures the infrared absorption coefficient of the semiconductor substrate and the measured value of the infrared absorption coefficient measuring device are input, and the temperature rise rate and the in-plane temperature distribution width of the required time of the semiconductor substrate are estimated, and the rise and fall are calculated. A temperature rise / fall characteristic judging means for judging a temperature characteristic, and various temperature control programs created in advance corresponding to various semiconductor substrates having different temperature rise / fall characteristics are stored. Heater output control means for selecting a temperature control program compatible with the temperature rise and fall characteristics determined by the means, and controlling the output of the heater based on the selected temperature control program while inputting the measured value of the substrate thermometer; A temperature raising and lowering control device for a semiconductor substrate, comprising: 6. The semiconductor substrate temperature raising / lowering control device according to claim 4, wherein the thermometer is an infrared radiation thermometer.