JPH1038702A - Substrate temperature measuring method, substrate temperature controlling method, and substrate treatment equipment using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accurately manage quality of a substrate and improve quality and yield of the substrate. SOLUTION: Temperatures in four portions of a substrate 9 are measured by using four contact type thermometers 21a-21d. When the difference between the maximum value and the minimum value of the measured temperatures exceeds a specified threshold value, a deviation alarm detecting part 41 detects the above state as the abnormal temperature distribution of the substrate 9. By using the measured temperatures, powers QL1-QL8 to be applied to 8 lamps 15(1)-15(8) are controlled in a measurement controlling part 4, and the temperature distribution of the substrate 9 is controlled. By these operations, abnormality of the temperature distribution of the substrate 9 can be detected, and the temperature distribution can be adequately maintained, so that accurate quality control of a substrate is enabled, and quality and yield of the substrate can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring a substrate temperature and a method for controlling a substrate temperature when a process involving heating such as an annealing process or a CVD process is performed on a semiconductor substrate, and
The present invention relates to a substrate processing apparatus using the same.

[0002]

2. Description of the Related Art Semiconductor substrates (hereinafter referred to as "substrates").
When a process involving heating such as an annealing process or a CVD process is performed on a substrate, the suitability of the process largely depends on the temperature of the substrate being processed. Therefore, temperature measurement of a substrate during processing is an important management factor in managing the quality of the substrate.

The temperature measurement method for a substrate is roughly classified into a contact-type temperature measurement method using a thermocouple and a non-contact-type temperature measurement method using a radiation thermometer. The contact-type temperature measurement has an advantage that accurate temperature measurement is possible because the measurement is performed by directly contacting the substrate, as compared with the non-contact temperature measurement. An example of a contact-type temperature measurement method utilizing such advantages is shown in FIG. In the measurement method shown in FIG. 5, the contact-type thermometer 121 is contacted so as to be supported from below the peripheral portion of the substrate 109, and the temperature of the contact portion is measured. The contact thermometer 121 measures the temperature of the substrate 109 and is also used as a means for supporting the substrate 109. The substrate 109 is supported by the contact thermometer 121 and the two substrate supporting portions 103. It has become.

Of course, in such measurement, the substrate 109
Can be measured only at the site of contact with the thermometer 121, so that the apparatus itself needs to be adjusted in advance so that appropriate processing is performed on the entire surface of the substrate. That is, the temperature is measured using a dummy substrate to which a large number of thermocouples are attached, or the process is actually performed on the dummy substrate,
The heating means and the structure inside the processing chamber are adjusted in advance so that the entire substrate is appropriately processed based on the observation result of the state of the processing. Then, in the device after the adjustment, as shown in FIG. 5, by measuring the temperature of the contact portion between the substrate 109 and the thermometer 121, it is determined whether or not the processing is properly performed.

[0005]

As described above, as a method of controlling the temperature of a substrate to be subjected to a process involving heating, there is a method of measuring the temperature of the substrate using a contact-type thermometer. However, since this method measures the temperature of only one portion of the substrate, there is no guarantee that the temperature distribution is always appropriate over the entire substrate. This is because, even if the apparatus is adjusted in advance, the state inside the apparatus is not always constant due to the aging of the inside of the apparatus, differences in characteristics of individual substrates, and sudden troubles. In addition, this problem has become an increasingly important problem due to recent miniaturization of the pattern of the substrate.

The present invention has been made in view of the above problems, and it is possible to measure a substrate using a contact-type thermometer and to improve the quality control of the substrate using the measurement result. It is an object of the present invention to provide a substrate temperature measurement method and a substrate temperature control method capable of improving the quality and yield of a substrate, and a substrate processing apparatus using the same.

[0007]

A first aspect of the present invention is a substrate temperature measuring method for measuring the temperature of a substrate to be subjected to a process involving heating, wherein the substrate temperature is measured using a plurality of contact thermometers. The method includes a temperature measurement step of measuring temperatures at a plurality of locations and acquiring a plurality of measured temperatures.

According to a second aspect of the present invention, there is provided the substrate temperature measuring method according to the first aspect, further comprising a display step of displaying the plurality of measured temperatures.

A third aspect of the present invention is the substrate temperature measuring method according to the first or second aspect, further comprising an abnormality detecting step of detecting an abnormality in the temperature distribution of the substrate from the plurality of measured temperatures.

According to a fourth aspect of the present invention, in the substrate temperature measuring method according to the third aspect, the abnormality detecting step determines that a difference between a maximum value and a minimum value of the plurality of measured temperatures is smaller than a predetermined value. When it is larger, the temperature distribution of the substrate is determined to be abnormal.

A fifth aspect of the present invention is a substrate temperature control method for controlling the temperature of a substrate heated by a plurality of heating means, wherein the temperature of a plurality of locations on the substrate is measured using a plurality of contact thermometers. And a temperature control step of obtaining a plurality of measured temperatures and a temperature control step of obtaining electric power to be applied to each of the plurality of heating means based on the plurality of measured temperatures.

According to a sixth aspect of the present invention, there is provided the substrate temperature control method according to the fifth aspect, wherein the controlling step includes providing the plurality of heating means based on one of the plurality of measured temperatures. A total power control step of determining the total power to be obtained.

According to a seventh aspect of the present invention, there is provided a substrate processing apparatus for performing a process involving heating on a substrate, comprising: a heating means for heating the substrate; and a plurality of contact-type thermometers for measuring the temperature of the substrate by contacting the same. And

According to an eighth aspect of the present invention, in the substrate processing apparatus according to the seventh aspect, an abnormality in the temperature distribution of the substrate is detected based on a plurality of measured temperatures obtained from the plurality of contact thermometers. The apparatus further includes abnormality detection means.

According to a ninth aspect of the present invention, there is provided the substrate processing apparatus according to the seventh aspect, wherein the plurality of heating means are provided, and electric power applied to each of the plurality of heating means is obtained based on the plurality of measured temperatures. Temperature control means is further provided.

[0016]

FIG. 1 is a view schematically showing a cross section from the side of a substrate processing apparatus 1 according to one embodiment of the present invention. This apparatus heats a substrate 9 using a lamp 15 as a heating means.
sing) apparatus, in which a substrate 9 to be processed is processed in a processing space SP formed by a main body 11 having an opening above and a quartz window 13 arranged to close the opening. Has become. A lid 12 is arranged above the quartz window 13 so as to cover the quartz window 13, and a lamp 15 as heating means is arranged below the lid 12. Further, the main body 11 includes a carry-in port 33 which is an entrance / exit when loading / unloading the substrate 9, a supply port 31 for supplying a processing gas to the substrate, and an exhaust port 32 for exhausting a gas inside the processing space SP. Is provided.

A support body 16 for supporting the substrate 9 is provided below the inside of the processing space SP.
A ring-shaped soaking ring 17 to which two contact thermometers 21a, 21b, 21c are attached is arranged. The heat equalizing ring 17 has a plate-like shape surrounding the side periphery of the substrate 9 as shown in FIG. 2, and increases the apparent appearance of the substrate 9 to reduce the temperature distribution of the substrate 9 arranged near the center. This is for uniformity. Further, a contact-type thermometer 21d for contacting and supporting near the center of the back surface of the substrate 9 at the upper end surface
Are arranged so as to penetrate a base member 18 described later. The contact thermometers 21a to 21c attached to the heat equalizing ring 17 support the substrate 9 at the tips thereof,
The contact type thermometer 21d measures the temperature near the center of the rear surface of the substrate 9 at the upper end surface thereof while supporting the substrate and measuring the temperature.

A base member 18 and a liner 14 made of quartz are provided below and beside the processing space SP to prevent generation and intrusion of contaminants from the bottom and side surfaces inside the main body 11. I have. As shown in FIG. 3, eight lamps 15 provided on the lid 12 are provided in a grid pattern.
Cooling channel 1 for discharging heat received from (1) to 15 (8)
9 are provided.

The above is the outline of the configuration of the substrate processing apparatus 1. Next, the outline of the operation of the apparatus will be described.

In this apparatus, first, the substrate 9 is loaded into the loading port 33.
Is carried in by a robot hand (not shown) along arrow A, and is placed on the contact type thermometers 21a to 21d. When the loading of the substrate 9 is completed, the loading port 33 is closed by a shutter (not shown), and the processing space SP is sealed. Then, a predetermined processing gas is supplied from the supply port 31 along the arrow F1, and if necessary, the gas in the processing space SP is exhausted from the exhaust port 32 along the arrow F2 to reduce the atmosphere in the processing space SP. Make it suitable for processing.

When the processing environment of the substrate 9 is set, the lamp 15 is turned on and the substrate 9 is irradiated with light L through the quartz window 13 to perform a process involving heating. At this time, the temperature of the substrate 9 is measured by using the contact thermometers 21a to 21d at the same time as the heating, and the power distribution to the lamp 15 is controlled based on the measurement result, whereby the temperature distribution of the substrate 9 is adjusted. You.

When the processing involving the heating of the substrate 9 is completed, the shutter of the entrance 33 is opened and the substrate 9 is taken out by the robot hand in the direction opposite to the arrow A, and a state of waiting for the processing of the next substrate is set.

Next, a temperature measuring method and a temperature control operation of the apparatus will be described. FIG. 4 is a block diagram showing a temperature measurement method and a temperature control operation of this apparatus. The output signals from the contact thermometers 21a to 21d are output from the measurement control unit 4.
And signals indicating lamp powers QL1 to QL8, which are powers to be given to the respective lamps, from the measurement controller 4 are input to the lamp power supply 51.

The measurement control unit 4 includes contact thermometers 21 a to 21
deviation alarm detection unit 41 for detecting an abnormality in the temperature distribution from the output signal from d, and a display unit 41 for displaying temperature information and an alarm
a, a target temperature control unit 42 for adjusting the temperature of the entire substrate 9;
A target temperature distribution control unit 43 for controlling the temperature distribution of the substrate 9;
And a lamp power calculator 44 for calculating power to be applied to each lamp.

First, four contact thermometers 21a to 21d
Are input to the deviation alarm detection unit 41 via the amplifier 22 as signals indicating the measured temperatures Ta to Td, respectively. In the deviation alarm detection unit 41, the measured temperatures Ta to Td
The abnormality of the temperature distribution of the substrate 9 is detected based on Specifically, of the four measured temperatures Ta to Td, the difference between the largest one and the smallest one is obtained, and if this difference exceeds a predetermined value, it is detected that the temperature distribution is abnormal. The information on whether or not the measured temperatures Ta to Td and the abnormality in the temperature distribution have been detected is sent to the display unit 41a and displayed. Thus, the detection of the abnormality can be confirmed, and the state at the time of abnormality detection and the state of the operating apparatus can be confirmed in real time by checking the display of the measured temperatures Ta to Td or after the processing.

The method of measuring the temperature of the apparatus and the method of detecting an abnormality in the temperature distribution have been described above. In this apparatus, the temperature distribution of the substrate 9 is further controlled using the measured temperature as follows.

First, the measured temperature Ta from the contact-type thermometer 21a is regarded as the reference temperature of the substrate 9, and this measured temperature Ta is compared with a target temperature To stored in the target temperature control section 42 in advance. I do. The target temperature To is a function of the time elapsed from the processing start time, and the lamp total power Q, which is the total power to be applied to the entire lamp, is determined along this function so that the measured temperature Ta changes.

Further, while the lamp total power Q is obtained, the target temperature distribution control unit 43 determines how the energy given from the lamp 15 is distributed to the vicinity of the area measured by each of the thermometers 21a to 21d. Distribution coefficients Kqa to Kqd are calculated. The distribution coefficients Kqa to Kqd
Is the target temperature distribution deviation of the substrate stored in advance in the target temperature distribution control unit 43 and each of the measured temperatures Ta to Td.
Is obtained by comparing the temperature distribution deviation obtained from the above.

The total lamp power Q and the distribution coefficients Kqa to Kqd obtained in each control unit are sent to a lamp power calculation unit 44, where the power to be supplied to each lamp 15 (1) to 15 (8) Are obtained.
In this embodiment, since the eight lamps 15 are arranged in a grid as shown in FIG. 3, the distribution of energy from the lamps in the X and Y directions in FIG.
qa to Kqd, and ramp 15 according to the distribution in the X direction.
The lamp powers QL5 to QL8 to be applied to (5) to 15 (8) are obtained, and the lamp powers QL1 to QL4 to be applied to the lamps 15 (1) to 15 (4) are obtained in accordance with the distribution in the Y direction. of course,
Depending on the measurement position of the temperature and the arrangement of the lamps, it may not be possible to accurately determine the power to be applied to each lamp from the distribution coefficient, but in consideration of the internal shape of the device and the state of reflection of light L from the lamp. The calculation method is appropriately adjusted.

Signals indicating the lamp powers QL1 to QL8 obtained by the lamp power calculator 44 are sent to the lamp power supply 51, and the lamp power supply 51
(1) to (15), the light L from the lamp is applied to the substrate 9. As a result, the temperature and temperature distribution of the entire substrate 9 are actively adjusted in accordance with the target temperature and the target temperature distribution.

As described above, in this embodiment, by measuring the temperature at a plurality of locations on the substrate 9,
The temperature distribution of the substrate 9 can be obtained, and the suitability of the processing state of the substrate 9 can be accurately grasped. Thereby, the quality of the substrate 9 can be more appropriately managed as compared with the case where the temperature of the substrate 9 is measured by one contact thermometer, and the quality control can be improved.

Further, in this embodiment, since the electric power applied to the plurality of lamps 15 is controlled using the plurality of measured temperatures, the temperature distribution of the substrate 9 can be properly maintained. Quality and yield can be improved.

Although the temperature measuring method and the temperature control operation of the substrate processing apparatus 1 according to this embodiment have been described above, the present invention is not limited to the above embodiment.

For example, in the above embodiment, the measured temperature T
Although the lamp total power Q is obtained using a, the lamp total power Q may be obtained based on the average value of the four measured temperatures Ta to Td.

Although four contact thermometers are used in the above embodiment, the number of contact thermometers is not limited to four.

In the above embodiment, eight rod-shaped lamps 15 are used. However, the number of the lamps is not limited to eight, and the shape of the lamp is not a rod but a spherical lamp. You may. Instead of controlling the lamps individually, a plurality of lamps may be controlled collectively. Further, the heating means is not limited to a lamp, and for example, a heater using a heating wire may be used.

In the above embodiment, the measured temperature and the abnormal state are displayed on the display section 41a. However, an alarm may be sounded when an abnormal state occurs.

Further, in the above-described embodiment, the total lamp power Q is determined by the target temperature control section 42. However, after the target temperature distribution control section 43 determines the energy to be applied near each thermometer, the total lamp power Q is calculated. Q may be obtained.

[0039]

As described above, according to the first aspect of the present invention, it is possible to use a plurality of contact thermometers to measure accurate temperatures at a plurality of locations on a substrate, thereby improving the quality control of the substrate. Can be achieved.

According to the second aspect of the present invention, since the temperatures measured from the plurality of contact thermometers are displayed on the display, the processing state of the substrate can be quickly grasped, and as a result, the quality control of the substrate can be achieved. Improvement can be achieved.

According to the third aspect of the present invention, since an abnormality in the temperature distribution of the substrate can be detected from the measured temperatures at a plurality of locations on the substrate, the quality control of the substrate can be improved.

According to the fourth aspect of the present invention, the abnormality in the temperature distribution of the substrate is detected from the difference between the maximum value and the minimum value of the plurality of measured temperatures. Improvement can be achieved.

According to the fifth aspect of the present invention, since the power to be supplied to the plurality of heating means is obtained from the plurality of measured temperatures, the temperature distribution of the substrate can be controlled, and as a result, the quality of the substrate and the yield can be improved. Can be planned.

According to the sixth aspect of the present invention, since the total power to be applied to the heating means is obtained from one measured temperature, the temperature of the entire substrate can be easily controlled in addition to the effect of the fifth aspect of the present invention. .

According to the seventh aspect of the present invention, since a plurality of contact thermometers are provided, it is possible to accurately measure the temperature of a plurality of portions of the substrate, thereby improving the quality control of the substrate. Can be.

According to the eighth aspect of the present invention, an abnormality in the temperature distribution of the substrate can be detected from a plurality of measured temperatures, so that quality control of the substrate can be improved.

According to the ninth aspect of the present invention, the temperature distribution of the substrate can be controlled from a plurality of measured temperatures, so that the quality of the substrate and the yield can be improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a perspective view showing an arrangement of a contact thermometer.

FIG. 3 is a perspective view showing an arrangement of a lamp.

FIG. 4 is a block diagram illustrating a configuration of a measurement control unit.

FIG. 5 is a perspective view showing a temperature measuring method using a conventional contact thermometer.

[Explanation of symbols]

 4 Measurement control unit 9 Substrate 15 Lamp 21a, 21b, 21c, 21d Contact thermometer 41 Deviation alarm detection unit 41a Display unit 42 Target temperature control unit 43 Target temperature distribution control unit 44 Lamp power calculation unit Ta, Tb, Tc, Td Measured temperature Q Lamp total power QL1 ~ QL8 Lamp power

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code Agency reference number FI Technical indication location H01L 21/26 H01L 21/324 D 21/324 21/66 T 21/66 21/26 L (72 ) Inventor Hideo Nishihara 322 Hashinashi Furukawa-cho, Fushimi-ku, Kyoto, Japan Dainippon Screen Manufacturing Co., Ltd. In business office

Claims (9)

[Claims] 1. A substrate temperature measuring method for measuring a temperature of a substrate to be subjected to a process involving heating, wherein a plurality of contact-type thermometers are used to measure temperatures at a plurality of locations on the substrate, and a plurality of measurements are performed. A substrate temperature measuring method, comprising: a temperature measuring step of acquiring a temperature. 2. The substrate temperature measuring method according to claim 1, further comprising a display step of displaying the plurality of measured temperatures. 3. The substrate temperature measuring method according to claim 1, further comprising an abnormality detecting step of detecting an abnormality in the temperature distribution of the substrate from the plurality of measured temperatures. Measurement method. 4. The substrate temperature measuring method according to claim 3, wherein the abnormality detecting step is performed when a difference between a maximum value and a minimum value of the plurality of measured temperatures is larger than a predetermined value. A temperature distribution of the substrate is determined to be abnormal. 5. A substrate temperature control method for controlling a temperature of a substrate heated by a plurality of heating means, wherein a plurality of contact-type thermometers are used to measure the temperature at a plurality of locations on the substrate, and the plurality of measurements are performed. A substrate temperature control method, comprising: a temperature measurement step of acquiring a temperature; and a temperature control step of obtaining electric power to be applied to each of the plurality of heating units based on the plurality of measurement temperatures. 6. The substrate temperature control method according to claim 5, wherein the control step determines a total power supplied to the plurality of heating units based on one of the plurality of measured temperatures. A substrate temperature control method, comprising: a total power control step. 7. A substrate processing apparatus for performing a process involving heating on a substrate, comprising: a heating unit for heating the substrate; and a plurality of contact thermometers for measuring the temperature of the substrate by contacting the substrate. A substrate processing apparatus characterized by the above-mentioned. 8. The substrate processing apparatus according to claim 7, further comprising: an abnormality detecting unit configured to detect an abnormality in a temperature distribution of the substrate based on a plurality of measured temperatures obtained from the plurality of contact thermometers. A substrate processing apparatus further provided. 9. The substrate processing apparatus according to claim 7, wherein the plurality of heating units are provided, and a temperature control unit that obtains electric power to be applied to each of the plurality of heating units based on the plurality of measured temperatures. A substrate processing apparatus further provided.