JP2001160583A - Substrate inverting mechanism, deposition device, and substrate treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate inverting mechanism which can easily invert a substrate transported with its surface to be treated downward in a small space immediately before the substrate is treated. SOLUTION: A supporting member 53 is pivoted by a hinge section 55a extended in the forward-backward direction in the figure turnably between two positions shown in the figure. When the member 53 is at a transferring position, the substrate W is fixed on the member 53 with its film forming surface upward and, when the member 53 is at a treating position, the substrate W is fixed under the member 53 with its film forming surface downward. When the member 53 is rotationally moved to the treating position, an opening AP communicating a transfer space S1 with a treating space S2 is closed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate reversing mechanism for reversing a substrate to be processed so that the surface to be processed is on the lower side.
And a film forming apparatus and a substrate processing apparatus using the same.

[0002]

2. Description of the Related Art Various types of substrate processing apparatuses such as a film forming apparatus and an etching apparatus have been used as apparatuses for processing semiconductor substrates and the like. In such a substrate processing apparatus, the surface of the substrate to be processed (hereinafter, the surface to be processed) is usually only one side, but may be forced to face downward due to various factors such as processing conditions. In some cases, it is desired to perform a series of processing by combining such a substrate processing apparatus with another substrate processing apparatus that performs processing with the surface to be processed facing upward. In this case, a substrate reversing mechanism is required for exchanging substrates between these devices. In addition, a substrate reversing mechanism is required because a transfer system is usually set up with the substrate to be processed facing upward for handling of the substrate.

In this case, a transfer robot capable of adsorbing and reversing a substrate is disposed immediately before an apparatus for performing processing with the surface to be processed on a lower side, and the substrate is turned over before being carried into a substrate processing apparatus. Although it is conceivable to return the substrate to its original state after unloading from the processing apparatus, the structure of the transfer robot becomes complicated. In particular, when a processing apparatus is composed of a plurality of substrate processing apparatuses for processing a substrate in a vacuum apparatus, the transfer robot is also placed under vacuum, so that it is impossible to invert the substrate by suction. Further, when a device for transferring a substrate or a portion for temporarily supporting a substrate is provided inside the substrate processing apparatus, it may be better to face the processed surface upward in order to protect the processed surface. It is desirable that the inversion of the substrate with the surface facing down is performed immediately before the processing.

Accordingly, the present invention provides a substrate reversing mechanism capable of simply and space-saving reversing a substrate conveyed with its surface to be processed downward immediately before the processing, a film forming apparatus and a substrate using the same. It is an object to provide a processing device.

[0005]

In order to solve the above problems, a substrate reversing mechanism of the present invention supports a substrate to be processed on a supporting surface and pivots around a horizontal axis at an end parallel to the supporting surface. A support member that is supported and rotatable, a transfer position for receiving a substrate conveyed with the surface to be processed on the upper surface, and a substrate supported on this support surface facing the processing space with the surface to be processed lower. And a driving device for rotating the supporting member between the processing positions.

In this case, only a simple operation of turning the support member from the delivery position to the processing position by the driving device and turning the support member from the processing position to the delivery position is simple and reliable immediately before and after the processing. The substrate can be turned over and the surface to be processed can be set to the lower side only during processing.

In a preferred aspect of the substrate reversing mechanism, the supporting member temporarily supports the transferred substrate at the operating position and moves the substrate from the operating position to the retracted position. And a support member for transferring a substrate supported on the support plate to the support plate and a holding member for pressing the periphery of the substrate transferred to the support plate against the support plate and holding the support pin.

In this case, the substrate can be smoothly received and fixed by a simple method, and the substrate can be turned over.

In a preferred aspect of the substrate reversing mechanism, the support plate is in contact with the back surface of the substrate passed from the support pins to adjust the temperature of the substrate.

In this case, the support plate makes it possible to control not only the holding and movement of the substrate, but also the temperature of the substrate during processing.

In a preferred aspect of the substrate reversing mechanism, the support member is fitted in an opening formed in a processing chamber including a processing space at a processing position.

In this case, when processing the substrate by moving the support member to the processing position, the processing chamber is automatically closed, and the space on the delivery position side is inadvertently contaminated by the substance in the processing chamber. This can be simply and effectively prevented.

In a preferred aspect of the substrate reversing mechanism, the holding member is fitted into an opening formed in a processing chamber containing the processing space when the supporting member is at the processing position, and the holding member is connected to the opening. The fitting portion may further include a blocking member for preventing a substance inside the processing space from going straight to the outside of the processing space.

In this case, the blocking member can more effectively prevent the substance in the processing space from moving to the delivery space.

In a preferred aspect of the substrate reversing mechanism, the support member includes a conductive member for supplying power to the substrate supported in contact with the electrode at the processing position.

In this case, the support member can control not only the holding and movement of the substrate but also the potential of the substrate during processing.

In a preferred aspect of the substrate reversing mechanism, the holding member is fitted into an opening formed in a processing chamber containing a processing space when the supporting member is at the processing position, and is held in contact with the electrode. Power is supplied to the substrate.

In this case, the support member facilitates not only the holding and movement of the substrate but also the control of the potential of the substrate during processing, and furthermore, the space on the delivery position side is inadvertent due to the substance in the processing chamber. Contamination can be easily and effectively prevented.

In a preferred embodiment of the substrate reversing mechanism, the substrate inverting mechanism is housed in an airtight container together with a processing chamber containing a processing space.

In this case, in a substrate processing apparatus of a type in which processing is performed inside the hermetic container, it is easy to reverse the substrate immediately before processing the substrate.

In a preferred aspect of the substrate reversing mechanism, the processing space is a deposition chamber of a deposition type deposition apparatus.

In this case, it is easy to invert the substrate immediately before the substrate processing in the deposition type film forming apparatus.

The above-mentioned substrate reversing mechanism is suitable for being incorporated in a deposition-type film forming apparatus in which the film forming surface is the lower side (the surface to be processed). It is suitable to be incorporated.

That is, a film forming apparatus of the present invention includes the above-described substrate inverting mechanism and a deposition type film forming unit.

Further, a first substrate processing apparatus of the present invention comprises: a first film forming apparatus having the above-mentioned substrate inverting mechanism and a first film forming unit of a deposition type for forming a first kind of film; A second film forming apparatus including a reversing mechanism and a second film forming unit of a deposit-up type for forming a second type of film is provided.

A second substrate processing apparatus according to the present invention includes a film forming apparatus including the above-described substrate reversing mechanism and a deposition type film forming unit, and performs a predetermined process on a substrate with a surface to be processed facing upward. And a processing unit for applying. In this case, for example, a series of processes by a deposition unit of a deposition-up type and a processing unit such as a deposition-down type of deposition unit having a surface to be processed on the upper side can be smoothly performed in a small space.

[0027]

DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] FIG. 1 is a plan view showing a film forming apparatus incorporating a substrate inversion mechanism according to a first embodiment. The film forming apparatus includes a first transfer device 2 that sequentially takes out the substrates W stored in the cassette CA with the film forming surface facing upward, a first ion plating device 31 that is a first deposition unit of a deposition type, Similarly, a second ion plating device 32, which is a second deposition unit of a deposit-up type, and a substrate W taken out of the cassette CA by the first transfer device 2 and transferred with the film formation surface facing upward, are subjected to both ion plating. A second transfer device 4 that is a substrate transfer device that transfers the substrate to an upper position of any of the devices 31 and 32,
By inverting the substrate transferred to a position above the first ion plating device 31, the film forming surface (the surface to be processed) is turned downward, and this film forming surface is placed in the processing space of the first ion plating device 31. The first substrate handling device 51, which is a substrate reversing mechanism to be opposed, and the substrate transferred to a position above the second ion plating device 32 are reversed so that the film-forming surface is turned downward and the film-forming surface is moved to the second position. Second substrate handling device 52 which is a substrate reversing mechanism for facing the processing space of two ion plating device 32
And

Here, the first transfer device 2 is an atmospheric transfer robot provided with an articulated type handling device. The first transfer device 2 has an arm that expands and contracts and is rotatable around a vertical axis. A hand that suction-supports the substrate W from the back surface.

The second transfer device 4 is arranged in an airtight container 61 maintained in a vacuum, and is provided in the load lock chamber 6.
The substrate is transferred to and from the first transfer device 2 via 1a.
The second transfer device 4 is a transfer robot for vacuum provided with a multi-joint type handling device. The second transfer device 4 is an arm that expands and contracts and is rotatable around a vertical axis. And a fork-shaped hand. The second transfer device 4 and the load lock chamber 6
1a is partitioned by a gate valve G. Further, on the opposite side of the load lock chamber 61a, as another substrate processing apparatus, the first and second ion plating apparatuses 31, 3
A cooling plate 41 is provided for temporarily mounting the substrate W immediately before the film formation in Step 2 to the load lock chamber 61a and cooling it to, for example, room temperature.

The first ion plating device 31
The first substrate handling apparatus 51 performs the inversion and processing of the substrates W while the substrates W are stored in the vacuum atmosphere in the airtight container 62. The hermetic container 62 is partitioned into upper and lower parts. The upper part is a delivery space S1 for receiving and reversing the substrate W, and the lower part is a processing space S2 for forming a film on the surface of the substrate W. On the other hand, the second ion plating device 32 and the second substrate handling device 52 also perform inversion and processing of the substrate W while the substrate W is housed in a vacuum atmosphere in the airtight container 63. The hermetic container 63 is also partitioned into upper and lower parts. The upper part is a delivery space S1 for receiving and reversing the substrate W, and the lower part is a processing space S2 for forming a film on the surface of the substrate W. In addition, the first substrate handling device 51 and the first and second
Each of the ion plating devices 31 and 32 is partitioned by a gate valve G. In addition, the airtight container 6
An exhaust system 64 is provided on the processing space S2 side of 2 and 63, and the delivery space S1 can always be maintained in a vacuum state.

The first substrate handling apparatus 51 includes a supporting member 53 pivotally supported at an end around a horizontal axis and rotating together with the substrate W supported on a supporting surface. The support member 53 is rotationally driven by the driving device 54, and receives a substrate W transferred by the second transport device 4 at the delivery space S1 side, and a processing position at which the substrate W faces the processing space S2. Rotate between. When the support member 53 moves from the delivery position to the processing position, the support member 53 is turned upside down and the opening AP communicating the delivery space S1 and the processing space S2 is closed.

The second substrate handling device 52 also includes a support member 53 that rotates together with the substrate W that is supported by being pivotally supported at an end around a horizontal axis. This support member 53 also has a driving device 54.
The substrate W is rotated between the transfer position where the substrate W transferred by the second transfer device 4 is received on the transfer space S1 side and the processing position where the substrate W is opposed to the processing space S2. When the support member 53 moves from the delivery position to the processing position, the support member 53 is turned upside down and the opening AP communicating the delivery space S1 and the processing space S2 is closed.

The substrate W carried out of the cassette CA by the first transfer device 2 is transferred to the second transfer device 4 in the airtight container 61 via the load lock chamber 61a. The substrate W transferred to the second transfer device 4 is transferred to, for example, a transfer position in a transfer space S1 that is above the first ion plating device 31, where the support member provided in the first substrate handling device 51 is provided. It is placed and fixed on the 53 horizontal support surface. The support member 53 is at the delivery position when receiving the substrate W, but is driven by the driving device 54 to be turned over, so that the substrate W faces the processing space S2 and the film forming surface of the substrate W faces downward. Move to the processing position. The support member 53 moved to the processing position is positioned adjacent to the opening AP, that is, the processing space S.
Block 2 Then, the first ion plating device 51
Starts film formation on the lower surface of the substrate W.

On the other hand, when the substrate W transferred to the second transfer device 4 is transferred to a transfer position in the transfer space S1 above the second ion plating device 32, the substrate W
Here, it is placed and fixed on a horizontal support surface of a support member 53 provided in the second substrate handling device 52. This support member 5
3 is also located at the delivery position when receiving the substrate W, but is driven by the driving device 54 to be inverted, so that the substrate W faces the processing space S2 and the film forming surface of the substrate W is on the lower side. Move to Support member 5 moved to processing position
3 closes an adjacent opening, that is, the processing space S2. After that, the film formation on the lower surface of the substrate W by the second ion plating device 52 starts.

The former first ion plating apparatus 31
When the film formation is completed, the support member 53 is driven by the driving device 54 to be inverted, and the substrate W is moved from the processing space S2 to the delivery space S1.
And the film forming surface is turned upside down. The substrate W on the support member 53 that has been inverted from the processing position to the delivery position in this way is recovered by the second transport device 4 and transferred to the first transport device 2 via the load lock chamber 61a with the film forming surface facing upward. Passed. The first transfer device 2 stores the processed substrate W in the cassette CA.

On the other hand, when the film formation is completed in the second ion plating device 32, the driving member 54 drives the support member 53 to turn over, and the substrate W is transferred from the processing space S2 to the delivery space S1 and the film is formed. Flip the face up. The support member 53 thus inverted from the processing position to the delivery position
The upper substrate W is collected by the second transfer device 4 and transferred to the first transfer device 2 via the load lock chamber 61a with the film forming surface facing upward. The first transfer device 2 stores the processed substrate W in the cassette CA.

The two ion plating devices 31,
At 32, the same processing is performed to improve the throughput of the entire apparatus.

FIG. 2 shows a first ion plating apparatus 3.
It is a figure explaining the AA arrow cross section of 1 side. Airtight container 62
Is divided into an upper part and a lower part. The upper part is a reversing chamber containing the delivery space S1, and the lower part is a processing chamber for the first ion plating apparatus 31 containing the processing space S2. The first ion plating apparatus 31 is a hearth 36 which is an evaporating substance source having a concave portion for accommodating a molten evaporating substance and being an anode below the processing space S2.
and an anode member 36 comprising an annular auxiliary anode 36b disposed annularly around the hearth 36a.
Is provided. Further, the first ion plating device 31
Includes an annular magnet 37 disposed immediately below the annular auxiliary anode 36b as a magnetic field control member. On one side surface of the side wall surrounding the processing space S2, a plasma gun 33 as a plasma source is provided so as to face the anode member 36. The plasma gun 33 is a pressure-gradient type plasma gun disclosed in Japanese Patent Application Laid-Open No. Hei 8-232060, etc., and has a double cylinder comprising an outer cylinder made of molybdenum and an inner pipe made of tantalum for introducing a carrier gas. a gun body 33a of one end formed by placing a disk made of LaB ₆ in a fixed other end with a disk-shaped cathode, and an annular magnet coil portion 33b for converging the plasma beam emitted from the gun body 33a,
A cylindrical portion 33c for connecting the magnet coil portion 33b to the side wall. The plasma gun 33 has an annular steering coil 33d around the cylindrical portion 33c for guiding the plasma beam to the processing space S2.

An exhaust system 64 provided on the opposite side of the plasma gun 33 is for maintaining the processing space S2 at an appropriate degree of vacuum, and includes an exhaust chamber 64a, a cryopump 64b for high vacuum exhaust, and a molecular turbocharger. And a pump 64c. A gate valve G is provided between the exhaust chamber 64a and the cryopump 64b, and between the exhaust chamber 64a and the molecular turbo pump 64c.

The support member 53 is pivotally supported by a hinge 55a and is rotatable between two positions shown in the figure. The substrate W with the film formation surface facing upward is fixed to the upper portion of the support member 53 at the delivery position, and the substrate W with the film formation surface facing downward is fixed to the lower portion of the support member 53 at the processing position. When the support member 53 rotates to the processing position, the delivery space S1
The opening AP that communicates with the processing space S2 is sealed. Note that a shutter 70 is arranged above and close to the processing space S2 and below the supporting member 53 at the processing position. The shutter 70 prevents the evaporating substance and the like from the anode member 31 from flowing into the delivery space S1 to contaminate the delivery space S1 and prevent the evaporating substance and the like from adhering to the substrate W at unintended timing. .

FIG. 3 shows the structure of the support member 53 in an enlarged manner. Note that the support member 53 is provided with an airtight container 62.
Although it is housed inside, the airtight container 6 is shown in the drawing for simplicity.
2 is omitted. The support member 53 includes a support plate 55 having a disk-shaped support surface SS for supporting the substrate W from the back surface during film formation, and a support surface on the support plate 55 for transferring the substrate W transferred from the second transfer device 4. Four support pins 56 that temporarily support the operation position protruding from the SS, and urge the periphery of the substrate W transferred to the support plate 55 toward the support plate 55 side as the support pins 56 descend. And a ring-shaped holding member 57 for holding.

The support plate 55 has a hinge portion 55a for rotatably supporting the support plate 55 about a horizontal axis HA parallel to the support surface SS.
It is connected to. The support plate 55 includes a hinge 55
Cooling water and the like are supplied through a pipe (not shown) provided in a, and a heater is also built in. The support plate 55 contacts the back surface of the substrate W transferred from the support pins 56 and adjusts the temperature of the substrate W as appropriate.

Each of the support pins 56 can be reciprocated as needed between an illustrated operating position protruding from the upper surface of the support plate 55 and a retracted position retracted from the upper surface of the support plate 55. When the support member 53 is at the delivery position as indicated by the solid line, the support pin 56 moves to the operation position and
The substrate W transferred from the substrate is temporarily supported. When the hand of the second transfer device 4 moves backward, the support pins 56 move down to the retreat position, and the supported substrate W is placed on the upper surface of the support plate 55.

The holding member 57 is connected to each support pin 56 via a pair of columns 58a and a connecting member 58b composed of a radially extending portion extending in the horizontal direction. In other words, the holding member 57 and the support pin 56 are interlocked, and when the support pin 56 projects and is in the operating position, the holding member 57 is in a retracted position, and the fixing of the substrate W to the support plate 55 is released. . On the other hand, when the support pin 56 is retracted and is in the retracted position, the holding member 57 is in the operating position, and the substrate W is fixed to the support plate 55. A slide guide is provided between the connecting member 58b and the support plate 55 to relatively smoothly move the connecting member 58b in a direction perpendicular to the support surface SS.

Between the back surface of the support plate 55 and the support 59 provided on the connecting member 58b, both ends are fixed with a bellows 80 whose internal pressure can be adjusted. As a result, by adjusting the air pressure supplied to the bellows 80, the support pin 56 can be moved to the operating position or the retreat position at an arbitrary timing. For example, when the inside of the bellows 80 is set to a high pressure to some extent, the bellows 80 relatively expands, and the support pin 56 can be fixed at the retracted position. on the other hand,
When the pressure inside the bellows 80 is reduced to some extent, the holding member 5
7, the fixing of the substrate W to the support plate 55 is released. However, as it is, there is a possibility that the support pin 56 does not rise to the operating position due to the weight of the holding member 57 or the like. Therefore, the cylinder device 81 that raises the lower surface of the support body 59 is provided to forcibly release the fixing of the substrate W. The holding member 57 is moved up. Thereby, the holding member 57
A constant gap can be formed between the support plate 55 and the support plate 55, and the substrate W can be inserted below the holding member 57 and placed on each support pin 56 safely and reliably. Note that the cylinder device 81 is disposed outside the airtight container 62, and a rod 81a extending from the cylinder device 81 can advance and retreat into the airtight container 62 while being sealed by a bellows 81b. The tip of the rod 81a, which moves up and down by an appropriate amount at a necessary timing, contacts the lower surface of the connecting member 58b to adjust it to an appropriate height. At this time, the support plate 55 is locked and does not rotate.

FIG. 4 is a plan view for explaining the arrangement of the support member 53 and the shutter 70. Although the support member 53 is accommodated in the airtight container 62, the airtight container 62 is omitted in the drawing for simplicity. The support member 53 is
The airtight container 62 is connected to a magnetic seal 83a extending outside the airtight container 62 via the connection shaft 54a, and is rotatable 180 degrees around the horizontal axis HA while keeping the airtight container 62 airtight. A pulley 83b is provided at the opposite end of the magnetic seal 83a. The pulley 83b is stretched over another pulley 83d via a belt 83c.
Is fixed to the rotating shaft of a motor 83e having a reduction gear. That is, by appropriately rotating the motor 83e, the support member 53 is moved to the illustrated delivery position and the circular opening AP.
Can be reciprocally rotated between the processing position and the lid.

Below the opening AP, a shutter 70 whose outline is indicated by a dotted line is arranged. The shutter 70 is driven by a driving device 72 and reciprocates at an appropriate timing between a blocking position shown by a dotted line and a retreat position shown by a dashed line. The driving device 72 includes a rotation mechanism 73
In addition, a lifting mechanism 74 is provided. Thereby, when the shutter 70 is in the shielding position, the periphery of the shutter 70 can be fitted into the step provided below the opening AP,
A more effective seal becomes possible.

FIG. 5 is a side sectional view for explaining the structure of the driving device 72 of the shutter 70. The shutter 70 is provided with a magnetic seal 7 extending outside the hermetic container 62 via the connecting shaft 70a.
3a, and is rotatable about a vertical axis while keeping the inside of the airtight container 62 airtight. Magnetic seal 7
A pulley 73b is provided at the opposite end of 3a. This pulley 73b is connected to another pulley 73d via a belt 73c.
, And the pulley 73d is fixed to a rotating shaft of a motor having a reduction gear (see FIG. 5). That is, by appropriately rotating a motor (not shown), the shutter 70 can be reciprocally moved between a shielding position for covering the circular opening AP and a retreat position for allowing film formation on the substrate W. it can. Magnetic seal 73a and connecting shaft 70a
Is fixed via a bellows 75 to a lifting plate 76a which can be raised and lowered. The elevating plate 76a is supported on the airtight container 62 side via a slide member 76b, and can be moved up and down smoothly with respect to the airtight container 62. One end of the lifting plate 76a is connected to an air cylinder 76c.
At the appropriate timing.
That is, the magnetic seal 73a and the shutter 70 supported by this can be moved up and down. Thus, when the shutter 70 is in the blocking position, the shutter 70 is raised to the position shown by the solid line, and is moved to a step provided below the opening AP.
Can be fitted around. On the other hand, when the shutter 70 is moved to the retracted position, the shutter 70 is allowed to rotate by being lowered to the position shown by the dashed line.

FIGS. 6 and 7 are diagrams for explaining the structure and operation of the support member 53 in more detail. FIG. 6 shows the support member 53 at the delivery position by a solid line, and FIG. 7 shows the support member 53 at the processing position by a two-dot chain line.

As shown in FIG. 6, a cavity CA for accommodating a cooling medium or the like is formed inside the support plate 55. Further, bellows 80 are provided below the cavity CA.
Pressure adjusting device (not shown)
Is also formed. The annular holding member 57 above the support plate 55 is a conductive member formed of a conductive metal material, and is fixed to the tips of the pair of columns 58a via an insulating ceramic spacer 58c.
The support layer 55c on the surface of the support plate 55 is also formed of an insulating ceramic material. That is, when the holding member 57 is urged toward the support layer 55c and the substrate W is sandwiched therebetween, the substrate W is in an electrically isolated state.

When the support member 53 is at the processing position as shown in FIG. 7, the holding member 57 comes into contact with an annular ceramic ring 62c fixed around the opening AP provided in the airtight container 62. At this time, the annular projection formed on the holding member 57 and the annular recess formed on the ceramic ring 62c are fitted. These protrusions and recesses constitute a blocking member as a labyrinth structure, and prevent evaporating substances inside the processing space S2 from entering the gap between the holding member 57 and the opening AP and leaking into the delivery space S1. . The holding member 57 is
Since it comes into contact with the ceramic ring 62c, the airtight container 62
Is insulated from the ceramic ring 62c
Abuts against a metal spring 62d which is an electrode when it comes into contact with. As a result, the potential of the ceramic ring 62c, that is, the potential of the substrate W can be appropriately set by a bias power supply (not shown) connected to the spring 62d.

An annular cover 62e is exchangeably fixed around the processing space S2 side of the opening AP. The cover 62e prevents the deposition material from adhering to the ceramic ring 62c and the like, and also more reliably prevents the deposition material in the processing space S2 from leaking into the delivery space S1. Note that the cover 62e is replaceable.

The shutter 70 contacts the lower end of the opening AP. At this time, the annular recess formed on the shutter 70 and the annular projection formed on the ceramic ring 62c are fitted. These recesses and projections constitute a labyrinth structure, and when the support member 53 is at the delivery position and the opening AP is in an open state, the evaporating substance and the like inside the processing space S2 enter the gap between the shutter 70 and the opening AP. It prevents entry and leakage to the delivery space S1.

Hereinafter, the overall operation of the film forming apparatus shown in FIGS. 1 to 7 will be described. The cassette CA transported from outside the apparatus is placed on a cassette stage. In the cassette CA, an unprocessed substrate W having a film formation surface facing upward is provided.
Are stacked and stored.

Next, the first transfer device 2 supports the unprocessed substrate W stored in the cassette CA on the lower surface side, and
The substrate W is taken out of A and temporarily placed on the support pins provided in the load lock chamber 61a.

Next, the outside gate of the load lock chamber 61a is closed to reduce the pressure inside, and the inside gate valve G is opened. The second transfer device 4 inserts a hand into the load lock chamber 61a, and transfers the substrate W in the load lock chamber 61a into the airtight container 61 while supporting the substrate W on the lower surface side.

Next, the second transfer device 4 carries the substrate W into one of the substrate handling devices 51 and 52. Normally, film formation is performed alternately by both ion plating devices 31 and 32. Therefore, for example, if the first ion plating device 31 is performing film formation, the second substrate handling device on the second ion plating device 32 side When the substrate W is loaded into the second ion plating apparatus 32 and the second ion plating apparatus 32 is forming a film, the substrate W is transferred to the first substrate handling apparatus 51 on the first ion plating apparatus 31 side.
Will be carried in.

In the following, the substrate W
The case where the first ion plating apparatus 31 is loaded and a film is formed by the first ion plating apparatus 31 will be described.

First, the gate valve G on the first substrate handling device 51 side is opened. The second transfer device 4 carries the substrate W into the first substrate handling device 51, where the lower end of the holding member 57 at the retreat position provided on the support member 53 at the delivery position and the upper end of the support pin 56 at the operating position. The substrate W is inserted between them, and the substrate W is placed on the support pins 56. Then, the hand of the second transport device 4 is retracted to close the gate valve G.
At this time, the shutter 70 provided between the first substrate handling device 51 and the first ion plating device 31
The first ion plating apparatus 31 is disposed at a shielding position fitted from below to prevent evaporating substances and the like from entering the first substrate handling apparatus 51.

Next, by extending the bellows 80, the support member 53 lowers the support pin 56 to move it to the retracted position and lowers the holding member 57 to move it to the operating position. As a result, the support pins 56
The substrate W is transferred onto the support 5 and the substrate W is fixed to the support surface SS of the support plate 55.

Next, the support member 53 is rotationally driven by the driving device 54, and reverses from the delivery position to the processing position.
Thus, the support member 53 is fitted into the opening AP from above, and the surface to be processed of the substrate W faces the processing space S2.

Next, the shutter 70 is lowered and then rotated to be disposed at the retreat position, and the evaporating substances and the like in the first ion plating apparatus 31 are placed on the processing surface of the substrate W fixed to the support member 53. Adhesion causes film formation to proceed. Film formation by ion plating is performed on the substrate W in a state where the film forming surface is directed downward and the temperature is adjusted to a desired temperature by the support plate 55 and the bias voltage is adjusted by the voltage supplied from the holding member 57. Done. Describing a specific film formation, the evaporation substance metal such as Cu is accumulated in the recessed portion of the hearth 36a in a heated and molten state. In this state, the state is switched from a standby state in which the plasma beam from the plasma gun 33 is incident on the annular auxiliary anode 36b to a film formation state in which the plasma beam is incident on the hearth 36a. Thus, a metal film is formed and grown on the lower surface of the substrate W, that is, the surface to be processed. When the film formed on the film forming surface of the substrate W has a predetermined thickness, the plasma beam is applied to the annular auxiliary anode 3.
6b. From the above,
The process of forming a thin film on the film formation surface of the substrate W ends. In addition,
By using the plasma gun 33 of the present embodiment, a strong plasma beam can be continuously and stably supplied, and a high-quality film is quickly formed on the substrate W. Further, since a cusp magnetic field is formed above the hearth 36a by the annular magnet 37 and the plasma beam incident on the hearth 36a is corrected, a film having a more uniform thickness is formed on the substrate W. Further, according to the above-described ion plating, there is a self-surface cleaning effect of cleaning the surface of the base before forming the metal film, so that a film having good orientation can be formed. In particular, in the case of a film for metal wiring, the film has high conductivity and has electromigration resistance. In the above description, the start and end of the film formation are controlled by switching the plasma beam using the annular auxiliary anode 36b. However, in the present embodiment, the shutter 70 is provided. The start / end can be controlled, and a switch by the annular auxiliary anode 36b is not necessarily required.

Next, the shutter 70 is rotated once and then rotated to be disposed at the shielding position, and the evaporating substance and the like in the first ion plating apparatus 31 are placed on the processing surface of the substrate W fixed to the support member 53. Adhesion is prevented, and the first ion plating device 31 and the first substrate handling device 51 are shut off.

Next, the support member 53 is rotationally driven by the driving device 54, and is reversed from the processing position to the delivery position.
Then, by shrinking the bellows 80, the holding member 5
7 is raised and moved to the retreat position to release the holding of the substrate W, and the support pins 56 are raised and moved to the operating position.

Next, the gate valve G on the first substrate handling device 51 side is opened, and the hand of the second transporting device 4 is inserted into the first substrate handling device 51, and is moved directly below the substrate W. The substrate W is transferred from the first substrate handling device 51 to the airtight container 61 while supporting W on the lower surface side.

Next, the second transport device 4 includes the cooling plate 4
1 is placed on the substrate W, and the cooling plate 41
Cool temporarily.

Next, the second transfer device 4 opens the gate valve G on the side of the load lock chamber 61a to open the load lock chamber 6a.
The cooled substrate W is transferred to 1a and retracted to close the gate valve G.

Next, the load lock chamber 61a is returned to the atmospheric pressure, the hand of the first transfer device 2 is inserted into the load lock chamber 61a, the substrate W is supported on the lower surface side, and the substrate W processed in the cassette CA is processed. Housed as

[Second Embodiment] Hereinafter, a substrate processing apparatus according to a second embodiment of the present invention will be described. The second
The substrate reversing mechanism incorporated in the substrate processing apparatus of the embodiment is the same as the substrate reversing mechanism of the first embodiment. However, in addition to the ion plating apparatus, the substrate reversing mechanism is used together with a substrate processing unit for performing other types of substrate processing. Built into the tool.

As shown in FIG. 8, a rectangular airtight container 61
A substrate handling device 51 which is a substrate reversing mechanism connected to the ion plating device 31 and a sputter type film forming device 132
And a cleaning device 141, and a load lock chamber 61 for unloading the substrate W from the airtight container 61 to the outside of the cluster tool or loading the substrate W from the outside of the cluster tool to the opposite end surface of the cleaning device 141.
a is connected. Here, the ion plating apparatus 31 is a film forming apparatus that performs processing with the film forming surface of the substrate W, that is, the surface to be processed facing downward, and the sputtering type film forming apparatus 13.
2 and the cleaning device 141 are processing units that perform processing with the surface to be processed of the substrate W facing upward.

The transfer device 4 is disposed inside the airtight container 61. The transfer device 4 is the second device of the first embodiment.
It has the same structure as the transport device 4.

The ion plating device 31 has the same structure as the first ion plating device 31 of the first embodiment, and the substrate handling device 51 has the same structure as the first substrate handling device 51 of the first embodiment. Have. The ion plating apparatus 31 is, for example, a substrate W which is a semiconductor wafer.
A Cu wiring film may be formed thereon.

The sputtering type film forming apparatus 132 forms a film by using sputtering.
The barrier layer may be formed before forming the u wiring layer.

The cleaning device 141 performs heat treatment by placing the substrate W on a heating plate.
For example, before the barrier layer is formed on the substrate W, the surface of the substrate may be heated to remove the deposits on the surface.

The operation will be briefly described below. The substrate W carried into the load lock chamber 61a is carried into the airtight container 61 by the transfer device 4 with the surface to be processed facing upward. The loaded substrate W is first loaded into the cleaning device 141 and heated to remove the deposits on the surface. The substrate W cleaned by the cleaning device 141 is carried into the sputter-type film forming device 132, where a barrier film containing Ti or the like is formed on the surface of the substrate W. Substrate W on which barrier film is formed by sputtering type film forming apparatus 132
Is inverted through the substrate handling device 51 and carried into the ion plating device 31, where the metal wiring film is formed on the barrier film on the lower surface of the substrate W with the surface to be processed on the lower side. The substrate W on which the metal wiring film is formed is supplied to the substrate handling device 51.
And the surface to be processed is on the upper side, and the transfer device 4
Is carried out to the outside via the load lock chamber 61a.

As described above, the present invention has been described with reference to the embodiments. However, the present invention is not limited to the above embodiments, and various modifications are possible. For example, in the first embodiment, the substrate handling devices 51 and 53, which are the substrate reversing mechanisms, are configured to be combined with the ion plating device.
Other processing equipment, such as etching equipment, heat treatment equipment, etc.
Substrate handling apparatuses 51 and 53 similar to the embodiment can be combined with various processing apparatuses having the processing target surface on the lower side.

In the first embodiment, the case where the same film is formed has been described. However, the barrier film is formed in the first ion plating device 31, and the wiring film is formed in the second ion plating device 32. It can also be used for laminating different types of films, for example.

[0078]

As is apparent from the above description, according to the substrate reversing mechanism of the present invention, the driving member turns the support member from the delivery position to the processing position, and turns the support member from the processing position to the transfer position. By simply performing such a simple operation, the substrate can be easily and reliably flipped immediately before and immediately after the processing, and the surface to be processed can be turned downward only during the processing.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating a structure of a film forming apparatus incorporating a substrate reversing mechanism according to a first embodiment.

FIG. 2 is a sectional view of the device in FIG.

FIG. 3 is a diagram illustrating a structure of a support member provided in the apparatus of FIG.

FIG. 4 is a partially enlarged plan view illustrating a driving mechanism of a support member and a shutter.

FIG. 5 is a partially enlarged side sectional view illustrating a shutter driving mechanism.

FIG. 6 is a side view illustrating a more detailed structure of a support member.

FIG. 7 is a side view illustrating a more detailed structure of a support member and the like.

FIG. 8 is a plan view illustrating a main part of a film forming apparatus according to a second embodiment.

[Explanation of symbols]

 Reference Signs List 2 1st transfer device 4 2nd transfer device 31 1st ion plating device 32 2nd ion plating device 33 Plasma gun 35 Exhaust system 36 Anode member 36a Hearth 36b Annular auxiliary anode 37 Annular magnet 41 Cooling plate 51 First substrate handling Device 52 Second substrate handling device 53 Support member 54 Drive device 55 Support plate 56 Support pin 57 Holding member 61, 62, 63 Airtight container 64 Exhaust system 70 Shutter S1 Delivery space S2 Processing space W Substrate

Claims (12)

[Claims] 1. A support member for supporting a substrate to be processed on a support surface, a support member rotatably supported at an end around a horizontal axis parallel to the support surface, and a processing surface facing upward. A drive for rotating and driving the support member between a transfer position for receiving the transported substrate on the support surface and a processing position where the substrate supported on the support surface faces the processing space with the surface to be processed facing down. A substrate reversing mechanism including a device. 2. The support member, comprising: a support plate having the support surface; and a substrate that temporarily supports the transported substrate at an operation position and supports the substrate when moving from the operation position to a retreat position. 2. The substrate reversing mechanism according to claim 1, further comprising: a support pin to be transferred to the support plate; and a holding member that presses and holds a periphery of the substrate transferred to the support plate against the support plate. 3. The substrate reversing mechanism according to claim 2, wherein the support plate is in contact with a back surface of the substrate passed from the support pins and adjusts a temperature of the substrate. 4. The substrate reversing mechanism according to claim 1, wherein said support member is fitted in an opening formed in a processing chamber including said processing space at said processing position. 5. The holding member fits into an opening formed in a processing chamber including the processing space when the support member is at the processing position, and a fitting portion between the holding member and the opening. 3. The substrate reversing mechanism according to claim 2, further comprising a blocking member for preventing a substance inside the processing space from going straight to the outside of the processing space. 6. The substrate reversing mechanism according to claim 1, wherein the support member includes a conductive member for supplying power to a substrate supported in contact with the electrode at the processing position. 7. The holding member, when the support member is at the processing position, fits into an opening formed in a processing chamber including the processing space, and supplies power to a substrate supported in contact with an electrode. 3. The substrate reversing mechanism according to claim 2, wherein: 8. The air conditioner according to claim 2, wherein said processing space and said processing chamber are housed in an airtight container.
The substrate reversing mechanism described in the above. 9. The substrate reversing mechanism according to claim 1, wherein the processing space is a film forming chamber of a deposition type film forming apparatus. 10. A film forming apparatus comprising: the substrate reversing mechanism according to claim 1; and a deposition type film forming unit. 11. A first film forming apparatus comprising: the substrate reversing mechanism according to claim 1; and a first film forming unit of a deposit-up type for forming a first type of film. 10. The substrate reversing mechanism according to any one of
A second film forming apparatus having a deposition-type second film forming unit for forming a film of the type described above. 12. A film forming apparatus comprising the substrate reversing mechanism according to claim 1 and a deposition type film forming unit, and performing a predetermined process on the substrate with the surface to be processed facing upward. A substrate processing apparatus comprising a processing unit.