JP2001152335A - Method and apparatus for vacuum treatment - Google Patents
Method and apparatus for vacuum treatmentInfo
- Publication number
- JP2001152335A JP2001152335A JP33224299A JP33224299A JP2001152335A JP 2001152335 A JP2001152335 A JP 2001152335A JP 33224299 A JP33224299 A JP 33224299A JP 33224299 A JP33224299 A JP 33224299A JP 2001152335 A JP2001152335 A JP 2001152335A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- electrostatic chuck
- heating
- substrate
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば真空処理槽
内において処理対象物である基板を吸着保持するための
静電チャックに関し、特に加熱冷却時の熱応力に起因す
る基板の割れを防止するための技術に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck for adsorbing and holding a substrate to be processed in, for example, a vacuum processing tank, and more particularly, to preventing cracking of the substrate due to thermal stress during heating and cooling. It is about technology for.
【０００２】[0002]
【従来の技術】従来より、真空中でシリコンウェハ等の
基板上に成膜等の処理を行う装置においては、静電気力
によって基板を吸着保持する静電チャックが広く用いら
れている。このような静電チャックとしては、成膜等の
処理において基板を所定の温度に維持するため温度制御
（加熱又は冷却）可能なホットプレートと一体的に構成
されたものが知られている。2. Description of the Related Art Conventionally, in an apparatus for performing a process such as film formation on a substrate such as a silicon wafer in a vacuum, an electrostatic chuck for attracting and holding the substrate by electrostatic force has been widely used. As such an electrostatic chuck, there has been known an electrostatic chuck integrally configured with a hot plate capable of controlling (heating or cooling) a substrate in order to maintain a substrate at a predetermined temperature in processing such as film formation.
【０００３】従来、このような静電チャック付のホット
プレートにおいては、誘電体内に設けられた吸着電極に
所定の電圧を印加することによって基板のほぼ全面を吸
着保持するようにしているが、吸着保持後の基板の温度
上昇又は温度降下が大きい（２５０℃以上）場合には、
静電チャックによって束縛された基板が急激に熱膨張又
は熱収縮しようとするため、基板に強い応力が発生して
基板が割れてしまうという問題があった。Conventionally, in such a hot plate with an electrostatic chuck, a predetermined voltage is applied to an attraction electrode provided in a dielectric material to attract and hold almost the entire surface of the substrate. If the temperature rise or temperature drop of the substrate after holding is large (250 ° C. or more),
Since the substrate bound by the electrostatic chuck rapidly expands or contracts thermally, there is a problem that a strong stress is generated in the substrate and the substrate is broken.
【０００４】従来、この問題を解決する方法として、静
電チャックによって基板を吸着保持せずに基板を加熱又
は冷却し、基板に割れが生じない温度にまで基板の温度
が上昇又は降下した後に吸着電極に電圧を印加して基板
を吸着保持する方法が提案されている。Conventionally, as a method for solving this problem, the substrate is heated or cooled without sucking and holding the substrate by an electrostatic chuck, and the substrate is sucked after the temperature of the substrate rises or falls to a temperature at which the substrate does not crack. A method has been proposed in which a voltage is applied to an electrode to suck and hold a substrate.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、静電チ
ャックによって基板を吸着保持せずに基板を加熱又は冷
却して基板に割れが生じない温度にまで基板の温度を上
昇又は降下させる従来技術においては、基板とホットプ
レートとの間において熱が伝わりにくく、そのため、基
板が所望の温度に達するまで必要以上に時間がかかって
しまうという問題があった。However, in the prior art for heating or cooling the substrate without sucking and holding the substrate by the electrostatic chuck to raise or lower the temperature of the substrate to a temperature at which the substrate does not crack. In addition, there is a problem that heat is hardly transmitted between the substrate and the hot plate, so that it takes more time than necessary until the substrate reaches a desired temperature.
【０００６】本発明は、このような従来の技術の課題を
解決するためになされたもので、処理対象物に割れを生
じさせることなく、しかも効率良く処理対象物を加熱及
び冷却して処理可能な真空処理方法及び真空処理装置を
提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve such problems of the prior art, and it is possible to efficiently heat and cool the object without cracking the object. It is an object to provide a vacuum processing method and a vacuum processing apparatus.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
になされた本発明は、請求項１に記載されているよう
に、真空中で加熱冷却体に処理対象物を静電吸着させて
該処理対象物を加熱冷却する工程を有する真空処理方法
であって、前記処理対象物を加熱冷却する際、少なくと
も当該処理対象物の温度が所定の温度に到達するまでの
間において、前記加熱冷却体に設けられた吸着電極に対
してその印加電圧が累積的に増加するように所定の電圧
を印加することを特徴とするものである。In order to achieve the above object, according to the present invention, as described in claim 1, an object to be treated is electrostatically adsorbed to a heating / cooling body in a vacuum to thereby remove the object. A vacuum processing method having a step of heating and cooling an object to be processed, wherein when heating and cooling the object to be processed, at least until the temperature of the object to be processed reaches a predetermined temperature, the heating and cooling body A predetermined voltage is applied to the attraction electrode provided in such a manner that the applied voltage is cumulatively increased.
【０００８】請求項１記載の発明にあっては、加熱冷却
体の吸着電極に対してその印加電圧が累積的に増加する
ように所定の電圧を印加することによって、処理対象物
を加熱冷却する際、処理対象物を加熱冷却体に吸着させ
る力を任意の値に設定することができる。According to the first aspect of the present invention, the object to be processed is heated and cooled by applying a predetermined voltage to the adsorption electrode of the heating and cooling body so that the applied voltage is cumulatively increased. At this time, the force for adsorbing the processing object to the heating / cooling body can be set to an arbitrary value.
【０００９】したがって、本発明によれば、例えば、そ
れ以後の温度上昇又は温度降下では処理対象物の割れが
生じない温度へ処理対象物の温度が到達するまでの間に
おいて、処理対象物の熱膨張又は熱収縮を逃がす（吸収
する）ことができる程度の比較的小さな電圧を吸着電極
に印加し比較的小さな吸着力で処理対象物を吸着させる
ことによって、熱膨張又は熱収縮に起因する熱応力が小
さく抑えられるので、処理対象物に割れを生じさせるこ
となく処理対象物を所定の温度まで加熱又は冷却するこ
とができる。Therefore, according to the present invention, for example, until the temperature of the processing object reaches a temperature at which the processing object does not crack when the temperature rises or decreases thereafter, the heat of the processing object increases. Applying a relatively small voltage to the adsorption electrode to absorb (absorb) the expansion or thermal contraction and adsorbing the object to be processed with a relatively small adsorption force allows thermal stress due to thermal expansion or thermal contraction to occur. Can be suppressed to a small value, so that the processing target can be heated or cooled to a predetermined temperature without causing cracks in the processing target.
【００１０】しかも、本発明にあっては、静電チャック
を働かせずに処理対象物を加熱又は冷却する従来技術の
場合に比べ、処理対象物に対し熱が格段に効率よく伝わ
る。Moreover, in the present invention, heat is transmitted to the processing object much more efficiently than in the prior art in which the processing object is heated or cooled without operating the electrostatic chuck.
【００１１】そして、その後、吸着電極に印加する電圧
を所定の高い値に設定保持させることによって、短時間
で処理対象物を所望の温度に加熱又は冷却することがで
きる。Then, the object to be treated can be heated or cooled to a desired temperature in a short time by setting and maintaining the voltage applied to the adsorption electrode at a predetermined high value.
【００１２】この場合、請求項２記載の発明のように、
請求項１記載の発明において、吸着電極に対する印加電
圧を徐々に増加させることも効果的である。In this case, as in the invention described in claim 2,
In the first aspect of the invention, it is also effective to gradually increase the voltage applied to the adsorption electrode.
【００１３】また、請求項３記載の発明のように、請求
項２記載の発明において、吸着電極に対する印加電圧を
直線的に増加させることも効果的である。Further, as in the third aspect of the invention, in the second aspect of the invention, it is also effective to linearly increase the voltage applied to the adsorption electrode.
【００１４】さらに、請求項４記載の発明のように、請
求項２記載の発明において、吸着電極に対する印加電圧
を段階的に増加させることも効果的である。Further, as in the invention according to the fourth aspect, in the invention according to the second aspect, it is also effective to gradually increase the voltage applied to the adsorption electrode.
【００１５】請求項３又は請求項４記載の発明によれ
ば、比較的小さな電圧を吸着電極に印加している間は、
比較的小さな吸着力で処理対象物を吸着するので、熱膨
張又は熱収縮に起因する熱応力が小さく抑えられ、これ
により処理対象物を所定の温度まで加熱又は冷却する間
に蓄積される熱応力の総量を低く抑えることができ、処
理対象物に割れを生じさせることがないというメリット
がある。According to the third or fourth aspect of the present invention, while a relatively small voltage is applied to the attraction electrode,
Since the object to be processed is adsorbed with a relatively small attraction force, the thermal stress caused by thermal expansion or thermal contraction is suppressed to a small value, whereby the thermal stress accumulated during heating or cooling the object to be processed to a predetermined temperature is reduced. Has the merit that the total amount of slag can be kept low and the object to be treated does not crack.
【００１６】さらにまた、請求項５記載の発明のよう
に、請求項１又は２のいずれか１項記載の発明におい
て、吸着電極にパルス状の電圧を印加することも効果的
である。Furthermore, as in the fifth aspect of the present invention, in the first or second aspect of the present invention, it is also effective to apply a pulsed voltage to the attraction electrode.
【００１７】請求項５記載の発明によれば、吸着電極へ
の電圧印加オフ時は吸着力が減衰するので、電圧印加時
に処理対象物に蓄積された熱応力を電圧印加オフ時に逃
がすことができ、これにより処理対象物に割れを生じさ
せることがないというメリットがある。According to the fifth aspect of the present invention, when the voltage is not applied to the attraction electrode, the attraction force is attenuated, so that the thermal stress accumulated in the object to be treated when the voltage is applied can be released when the voltage is applied. Therefore, there is an advantage that a crack is not generated in the object to be treated.
【００１８】一方、請求項６記載の発明は、誘電体内に
吸着電極を有する静電チャック本体と、この静電チャッ
ク本体内に設けられた加熱冷却手段と、前記吸着電極に
対して印加電圧を逐次変化させながら印加するように構
成された静電チャック電源とを備えたことを特徴とする
加熱冷却装置である。According to a sixth aspect of the present invention, there is provided an electrostatic chuck body having an attraction electrode in a dielectric, a heating and cooling means provided in the electrostatic chuck body, and a voltage applied to the attraction electrode. A heating and cooling device comprising: an electrostatic chuck power supply configured to apply the voltage while changing the voltage sequentially.
【００１９】請求項６記載の発明によれば、上述した本
発明の方法を簡素な構成で実施することが可能になる。According to the invention described in claim 6, the method of the present invention described above can be performed with a simple configuration.
【００２０】また、請求項７記載の発明は、真空処理槽
の所定の位置に請求項６記載の加熱冷却装置が設けられ
ていることを特徴とする真空処理装置である。According to a seventh aspect of the present invention, there is provided a vacuum processing apparatus, wherein the heating and cooling device according to the sixth aspect is provided at a predetermined position of a vacuum processing tank.
【００２１】請求項７記載の発明によれば、迅速に処理
対象物を加熱及び冷却して効率良く処理を行いうる簡素
な構成の真空処理装置を得ることができる。According to the seventh aspect of the present invention, it is possible to obtain a vacuum processing apparatus having a simple structure capable of quickly heating and cooling an object to be processed and efficiently performing the processing.
【００２２】[0022]
【発明の実施の形態】以下、本発明に係る静電チャック
及びこれを用いた加熱冷却装置並びに真空処理装置の好
ましい実施の形態を図面を参照して詳細に説明する。図
１は、本発明に係る真空処理装置の一実施の形態である
スパッタリング装置の概略構成を示す図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of an electrostatic chuck according to the present invention, a heating / cooling apparatus using the same, and a vacuum processing apparatus will be described below in detail with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a sputtering apparatus which is an embodiment of a vacuum processing apparatus according to the present invention.
【００２３】図１に示すように、本実施の形態のスパッ
タリング装置１は、図示しない真空排気系に接続された
真空処理槽２を有し、この真空処理槽２の上部に例えば
金属からなるターゲット３が配設されている。As shown in FIG. 1, a sputtering apparatus 1 according to the present embodiment has a vacuum processing tank 2 connected to a vacuum exhaust system (not shown). 3 are provided.
【００２４】このターゲット３は、真空処理槽２の外部
に設けられた直流電源４に接続され、この直流電源４に
よって負電圧に印加されるように構成されている。The target 3 is connected to a DC power supply 4 provided outside the vacuum processing tank 2, and is configured to be applied with a negative voltage by the DC power supply 4.
【００２５】一方、真空処理槽２の下部には、ターゲッ
ト３と対向するようにサセプタ５が設けられており、こ
のサセプタ５の上部には、例えばシリコンウェハ等の基
板（処理対象物）６を吸着保持するための静電チャック
１０が固定されている。On the other hand, a susceptor 5 is provided below the vacuum processing tank 2 so as to face the target 3, and a substrate (processing object) 6 such as a silicon wafer, for example, is provided above the susceptor 5. An electrostatic chuck 10 for holding by suction is fixed.
【００２６】静電チャック１０は、誘電体である例えば
セラミックス材料を用いて円板形状に形成された静電チ
ャックプレート（静電チャック本体）１１を有し、この
静電チャックプレート１１の内部には、抵抗発熱体から
なるヒーター（加熱冷却手段）１２と、導電性材料から
なる一対の双極型の吸着電極１３、１４が設けられてい
る。The electrostatic chuck 10 has a disk-shaped electrostatic chuck plate (electrostatic chuck body) 11 made of a dielectric material, for example, a ceramic material. Is provided with a heater (heating / cooling means) 12 composed of a resistance heating element and a pair of bipolar adsorption electrodes 13 and 14 composed of a conductive material.
【００２７】ここで、ヒーター１２は真空処理槽２の外
部に配設されたヒーター電源１５に接続され、また、吸
着電極１３、１４は、同様に真空処理槽２の外部に配設
された静電チャック電源１６に接続されている。Here, the heater 12 is connected to a heater power supply 15 provided outside the vacuum processing tank 2, and the adsorption electrodes 13, 14 are similarly connected to a static power supply provided outside the vacuum processing tank 2. It is connected to an electric chuck power supply 16.
【００２８】この静電チャック電源１６には、上記一対
の吸着電極１３、１４への印加電圧を逐次変化させる電
圧制御回路１６ａと、印加電圧の極性を逆にして逆電圧
を印加する逆電圧印加回路１６ｂとが設けられ、また、
この静電チャック電源１６は、電圧印加終了時（チャッ
クオフ時）において吸着電極１３、１４を直ちに接地さ
せるように構成されている。The electrostatic chuck power supply 16 includes a voltage control circuit 16a for sequentially changing the voltage applied to the pair of suction electrodes 13 and 14, and a reverse voltage application for inverting the polarity of the applied voltage and applying a reverse voltage. And a circuit 16b,
The electrostatic chuck power supply 16 is configured to immediately ground the suction electrodes 13 and 14 when the voltage application is completed (when the chuck is turned off).
【００２９】なお、静電チャックプレート１１内には、
例えば水等の冷却媒体を循環させることによって静電チ
ャックプレート１１を冷却できるように構成され（図示
せず）、これにより静電チャック１０は加熱冷却体又は
加熱冷却装置としての機能を有している。The electrostatic chuck plate 11 has:
For example, the electrostatic chuck plate 11 is configured to be cooled by circulating a cooling medium such as water (not shown), whereby the electrostatic chuck 10 has a function as a heating / cooling body or a heating / cooling device. I have.
【００３０】このような構成を有する本実施の形態にお
いては、まず、真空処理槽２を真空排気して予め真空状
態にしておくとともに、ヒーター１２に通電して静電チ
ャックプレート１１を所定の温度に加熱した状態で、真
空処理槽２内に基板６を搬入する。そして、図示しない
昇降機構によって基板６を静電チャックプレート１１上
の所定の位置に載置する。In this embodiment having such a configuration, first, the vacuum processing tank 2 is evacuated to a vacuum state in advance, and the heater 12 is energized to heat the electrostatic chuck plate 11 to a predetermined temperature. The substrate 6 is carried into the vacuum processing tank 2 while the substrate 6 is heated. Then, the substrate 6 is placed at a predetermined position on the electrostatic chuck plate 11 by a lifting mechanism (not shown).
【００３１】次に、静電チャック電源１６を起動し、一
対の吸着電極１３、１４に対してそれぞれ正負の電圧を
印加して静電吸着力を発生させ、基板６を静電チャック
プレート１１の表面に密着させる。これにより、基板６
は静電チャックプレート１１からの熱伝導によって加熱
される。Next, the electrostatic chuck power supply 16 is started, and positive and negative voltages are applied to the pair of chucking electrodes 13 and 14 to generate an electrostatic chucking force. Adhere to the surface. Thereby, the substrate 6
Is heated by heat conduction from the electrostatic chuck plate 11.
【００３２】本発明の場合は、電圧印加当初において、
基板６の温度が以後の温度上昇では割れが生じない所定
の温度に到達するまで、吸着電極１３、１４に印加する
電圧を基板６の熱膨張又は熱収縮を吸収できる程度の比
較的小さな値に設定する。In the case of the present invention, at the beginning of the voltage application,
Until the temperature of the substrate 6 reaches a predetermined temperature at which cracking does not occur in the subsequent temperature rise, the voltage applied to the adsorption electrodes 13 and 14 is set to a relatively small value that can absorb the thermal expansion or thermal contraction of the substrate 6. Set.
【００３３】図２は、本発明の第１の実施の形態を示す
もので、吸着電極に対する印加電圧のパターンと基板の
温度との関係を示すグラフである。FIG. 2 shows the first embodiment of the present invention, and is a graph showing the relationship between the pattern of the voltage applied to the attraction electrode and the temperature of the substrate.
【００３４】図２に示すように、本実施の形態において
は、基板６の温度が所定の基準温度Ｔ1に到達するま
で、吸着電極１３、１４に対する印加電圧の値を直線的
に増加させ、これにより当該印加電圧が累積的に増加す
るようにする。As shown in FIG. 2, in this embodiment, the value of the voltage applied to the attraction electrodes 13 and 14 is increased linearly until the temperature of the substrate 6 reaches a predetermined reference temperature T 1 . As a result, the applied voltage is cumulatively increased.
【００３５】この場合、基準温度Ｔ1は、スパッタリン
グの際における基板６の加熱温度Ｔ2の５０〜８０％と
することが好ましく、より好ましくは、６０〜７０％で
ある。In this case, the reference temperature T 1 is preferably 50 to 80%, more preferably 60 to 70% of the heating temperature T 2 of the substrate 6 during sputtering.
【００３６】そして、印加電圧を所定の高い電圧値Ｖ1
に設定して保持させる。これにより、基板６の温度は、
短時間で所定の加熱温度Ｔ2まで上昇する。Then, the applied voltage is increased to a predetermined high voltage value V 1.
And set to hold. Thereby, the temperature of the substrate 6 becomes
It rises a short time up to a predetermined heating temperature T 2.
【００３７】本実施の形態によれば、それ以後の温度上
昇又は温度降下では基板６の割れが生じない基準温度Ｔ
1へ基板６の温度が到達するまでの間において、吸着電
極１３、１４に対する印加電圧の値を直線的に増加させ
て比較的小さな吸着力で基板６を吸着させることから、
熱膨張又は熱収縮に起因する熱応力が小さく抑えられ、
基板６に割れを生じさせることがない。According to the present embodiment, the reference temperature T at which the substrate 6 does not crack when the temperature rises or falls thereafter.
Until the temperature of the substrate 6 reaches 1 , the value of the voltage applied to the adsorption electrodes 13 and 14 is linearly increased to adsorb the substrate 6 with a relatively small adsorption force.
Thermal stress due to thermal expansion or thermal contraction is kept small,
The substrate 6 is not cracked.
【００３８】その一方、本実施の形態の場合は、ある程
度の吸着力で基板６を静電チャックプレート１１に吸着
させているので、従来技術に比べて基板６に対し熱を効
率良く伝えることができる。On the other hand, in the case of the present embodiment, the substrate 6 is attracted to the electrostatic chuck plate 11 with a certain attractive force, so that heat can be efficiently transmitted to the substrate 6 as compared with the prior art. it can.
【００３９】その結果、本実施の形態によれば、基板６
を静電チャックプレート１１上に載置した後、短時間で
所定の温度Ｔ1まで上昇させることができ、さらに、そ
の後は所定の高い電圧値Ｖ1を印加することによって迅
速に基板６を加熱温度Ｔ2まで昇温させることができる
ので、スパッタリングを開始するまでの時間を大幅に短
縮することができる。As a result, according to the present embodiment, the substrate 6
After mounted on the electrostatic chuck plate 11, it can be raised in a short time to a predetermined temperature T 1, further then heated quickly substrate 6 by applying a predetermined high voltage value V 1 it is possible to temperature T 2 raising the temperature, it is possible to greatly shorten the time until the start of sputtering.
【００４０】特に本実施の形態の場合は、基板６の温度
が所定の基準温度Ｔ1に到達するまで、吸着電極１３、
１４に対する印加電圧の値を直線的に増加させることに
よって、比較的小さな電圧を吸着電極１３、１４に印加
している間は、比較的小さな吸着力で基板６を吸着する
ので、熱膨張又は熱収縮に起因する熱応力が小さく抑え
られ、これにより基板６を所定の温度まで加熱又は冷却
する間に蓄積させる熱応力の総量を低く抑えることがで
き、基板６に割れを生じさせることがないというメリッ
トがある。In particular, in the case of the present embodiment, until the temperature of the substrate 6 reaches a predetermined reference temperature T 1 ,
When a relatively small voltage is applied to the attraction electrodes 13 and 14 by increasing the value of the voltage applied to the substrate 14 linearly, the substrate 6 is attracted with a relatively small attraction force, so that thermal expansion or thermal expansion is achieved. Thermal stress due to shrinkage is suppressed to a small value, whereby the total amount of thermal stress accumulated during heating or cooling of the substrate 6 to a predetermined temperature can be suppressed to a low level, and the substrate 6 does not crack. There are benefits.
【００４１】その後、真空処理槽２内に例えばアルゴン
ガス等のスパッタリングガスを導入し、直流電源４を起
動してターゲット３に負電圧を印加すると、真空処理槽
２内にプラズマが生成され、基板６の表面においてスパ
ッタリングが行われる。Thereafter, when a sputtering gas such as argon gas is introduced into the vacuum processing tank 2 and a DC power supply 4 is started to apply a negative voltage to the target 3, plasma is generated in the vacuum processing tank 2 and On the surface of No. 6, sputtering is performed.
【００４２】そして、基板６の表面に所定の厚さの薄膜
が形成された後に直流電源４を停止させ、プラズマを消
滅させる。After a thin film having a predetermined thickness is formed on the surface of the substrate 6, the DC power supply 4 is stopped to extinguish the plasma.
【００４３】さらに、静電チャック電源１６を停止さ
せ、吸着電極１３、１４への電圧印加を終了させる。こ
のとき、静電チャック電源１６を介して吸着電極１３、
１４を接地させ、基板６と各吸着電極１３、１４の間に
蓄積された電荷を放出させる。Further, the electrostatic chuck power supply 16 is stopped, and the voltage application to the attraction electrodes 13 and 14 is terminated. At this time, the suction electrode 13 via the electrostatic chuck power supply 16,
14 is grounded, and charges accumulated between the substrate 6 and each of the adsorption electrodes 13 and 14 are discharged.
【００４４】しかし、各吸着電極１３、１４を接地させ
ただけでは、静電吸着時に発生した電荷は完全には消滅
せず、残留電荷として残ってしまう。However, if the suction electrodes 13 and 14 are simply grounded, the charges generated during electrostatic suction do not completely disappear, but remain as residual charges.
【００４５】そこで、本実施の形態においては、静電チ
ャック電源１６を再起動し、図１及び２に示すように、
静電チャック電源１６の逆電圧印加回路１６ｂから上述
した静電吸着時とは逆極性の電圧を、各吸着電極１３、
１４に対して所定時間印加する。Therefore, in the present embodiment, the electrostatic chuck power supply 16 is restarted, and as shown in FIGS.
A voltage having a polarity opposite to that at the time of the electrostatic chuck described above is applied from the reverse voltage applying circuit 16b of the electrostatic chuck power supply 16 to each of the chucking electrodes 13,
14 is applied for a predetermined time.
【００４６】この逆極性の電圧の印加により、上述した
残留電荷と逆極性の電荷が基板６と各吸着電極１３、１
４の間に発生し、正負の電荷が相殺されるため、基板６
と各吸着電極１３、１４の間に蓄積された電荷が短時間
で減少し、これに伴い静電チャック１０の残留吸着力が
減少する。By the application of the voltage of the opposite polarity, the electric charge of the opposite polarity to the above-mentioned residual electric charge is applied to the substrate 6 and each of the attraction electrodes 13, 1.
4 and the positive and negative charges cancel each other out.
And the electric charge accumulated between the suction electrodes 13 and 14 decreases in a short time, and accordingly, the residual suction force of the electrostatic chuck 10 decreases.
【００４７】その後、静電チャック電源１６を再び停止
させる。本実施の形態の場合は、上述したように静電チ
ャック１０の残留吸着力が減少しているので、図示しな
い昇降機構によって基板６を静電チャックプレート１１
から容易に離脱させることができる。Thereafter, the electrostatic chuck power supply 16 is stopped again. In the case of the present embodiment, since the residual chucking force of the electrostatic chuck 10 is reduced as described above, the substrate 6 is moved to the electrostatic chuck plate 11 by a lifting mechanism (not shown).
Can be easily detached from.
【００４８】このように、本実施の形態のスパッタリン
グ装置１によれば、簡素な構成で成膜処理のスループッ
トを向上させることができる。As described above, according to the sputtering apparatus 1 of the present embodiment, the throughput of the film forming process can be improved with a simple configuration.
【００４９】図３（ａ）（ｂ）は、本発明の第２及び第
３の実施の形態を示すもので、静電チャックの吸着電極
に対する印加電圧のパターンの他の例を示すグラフであ
る。FIGS. 3 (a) and 3 (b) show the second and third embodiments of the present invention, and are graphs showing another example of the pattern of the voltage applied to the chucking electrode of the electrostatic chuck. .
【００５０】本発明においては、図３（ａ）に示すよう
に、基板６の温度が基準温度Ｔ1に到達するまでの間に
おいて、各吸着電極１３、１４に対する印加電圧を段階
的に増加させることによって、各吸着電極１３、１４に
対する印加電圧を徐々に増加させることもできる。In the present invention, as shown in FIG. 3A, the voltage applied to each of the adsorption electrodes 13 and 14 is increased stepwise until the temperature of the substrate 6 reaches the reference temperature T 1 . Thereby, the voltage applied to each of the adsorption electrodes 13 and 14 can be gradually increased.
【００５１】本実施の形態によれば、上述の実施の形態
と同様に、基板６を静電チャックプレート１１上に載置
した後、迅速に基板６を加熱温度Ｔ2まで昇温させるこ
とができることに加え、比較的小さな電圧を吸着電極１
３、１４に印加している間は、比較的小さな吸着力で基
板６を吸着するので、熱膨張又は熱収縮に起因する熱応
力が小さく抑えられるため、基板６を所定の温度まで加
熱又は冷却する間に蓄積させる熱応力の総量を低く抑え
ることができ、基板６に割れを生じさせることがないと
いうメリットがある。In accordance with the present embodiment, similarly to the embodiment described above, after placing the substrate 6 on the electrostatic chuck plate 11, it is possible to rapidly warm the substrate 6 to the heating temperature T 2 In addition to being able to do so, a relatively small voltage
While the voltage is applied to the substrates 3 and 14, the substrate 6 is attracted by a relatively small attracting force, so that the thermal stress caused by thermal expansion or thermal contraction can be suppressed to a small value. During this process, the total amount of thermal stress to be accumulated can be kept low, and there is an advantage that the substrate 6 is not cracked.
【００５２】また、本発明においては、図３（ｂ）に示
すように、基板６の温度が基準温度Ｔ1に到達するまで
の間において、各吸着電極１３、１４にパルス状の電圧
を印加ることによって、各吸着電極１３、１４に対する
印加電圧を徐々に増加させることもできる。In the present invention, as shown in FIG. 3B, a pulse-like voltage is applied to each of the attraction electrodes 13 and 14 until the temperature of the substrate 6 reaches the reference temperature T 1. Accordingly, the voltage applied to each of the adsorption electrodes 13 and 14 can be gradually increased.
【００５３】本実施の形態によれば、上述の実施の形態
と同様に、基板６を静電チャックプレート１１上に載置
した後、迅速に基板６を加熱温度Ｔ2まで昇温させるこ
とができることに加え、吸着電極１３、１４への電圧印
加オフ時は吸着力が減衰するので、電圧印加時に基板６
に蓄積された熱応力を電圧印加オフ時に逃がすことがで
き、これにより基板６に割れを生じさせることがないと
いうメリットがある。その他の構成及び作用効果につい
ては上記実施の形態と同一であるのでその詳細な説明を
省略する。In accordance with the present embodiment, similarly to the embodiment described above, after placing the substrate 6 on the electrostatic chuck plate 11, it is possible to rapidly warm the substrate 6 to the heating temperature T 2 In addition to this, when the voltage is not applied to the attraction electrodes 13 and 14, the attraction force is attenuated.
The thermal stress accumulated in the substrate 6 can be released when the voltage application is turned off, which has an advantage that the substrate 6 is not cracked. The other configuration and operation and effect are the same as those of the above-described embodiment, and thus detailed description thereof will be omitted.
【００５４】なお、本発明は上述の実施の形態に限られ
ることなく、種々の変更を行うことができる。例えば、
上述の実施の形態においては、処理対象物を加熱する際
に吸着電極に対する印加電圧を累積的に増加させるよう
にしたが、本発明はこれに限られず、所定の温度差をも
って処理対象物を冷却する場合にも適用することができ
る。The present invention is not limited to the above-described embodiment, but can be variously modified. For example,
In the above embodiment, the voltage applied to the adsorption electrode is cumulatively increased when the object to be processed is heated. However, the present invention is not limited to this, and the object to be processed is cooled with a predetermined temperature difference. It can also be applied to the case.
【００５５】また、上述の実施の形態においては、スパ
ッタリング装置（方法）に例をとって説明したが、本発
明はこれに限られず、静電チャック機構を用いるすべて
の装置（方法）に適用しうるものである。Further, in the above-described embodiment, an example was described in which a sputtering apparatus (method) was used. However, the present invention is not limited to this, and is applicable to all apparatuses (methods) using an electrostatic chuck mechanism. It is a good thing.
【００５６】[0056]
【実施例】以下、本発明の実施例を比較例とともに詳細
に説明する。 ＜実施例１＞図１に示す静電チャック１０を用い、基板
６として８インチサイズの室温のシリコンウェハを本発
明の方法によって５００℃に昇温させ、スパッタリング
によりＡｌ膜を形成した後に基板６を静電チャックプレ
ート１１から離脱させた。この場合の吸着電極１３、１
４への印加電圧とシリコンウェハの温度変化を図４に示
す。Hereinafter, examples of the present invention will be described in detail along with comparative examples. <Embodiment 1> Using an electrostatic chuck 10 shown in FIG. 1, an 8-inch room temperature silicon wafer was heated to 500 ° C. by the method of the present invention as a substrate 6 and an Al film was formed by sputtering, after which an Al film was formed. Was separated from the electrostatic chuck plate 11. The adsorption electrodes 13, 1 in this case
FIG. 4 shows the voltage applied to the silicon wafer 4 and the temperature change of the silicon wafer.
【００５７】まず、５００℃以上に加熱された静電チャ
ックプレート１１上に室温のシリコンウェハを設置し、
吸着電極１３、１４に正負の電圧を印加して静電吸着力
を発生させ、シリコンウェハを静電チャックプレート１
１に吸着させて昇温させた。First, a silicon wafer at room temperature is placed on the electrostatic chuck plate 11 heated to 500 ° C. or higher,
A positive or negative voltage is applied to the attraction electrodes 13 and 14 to generate an electrostatic attraction force, and the silicon wafer is placed on the electrostatic chuck plate 1.
1 and the temperature was raised.
【００５８】この場合の印加電圧は、印加開始から１５
秒まで連続して直線的に上昇させ（図中部分ａ）、１５
秒経過後からは一定値に保持した。In this case, the applied voltage is 15
It rises continuously and linearly until second (portion a in the figure), and 15
After a lapse of seconds, the value was kept constant.
【００５９】図４に示すように、印加開始から１５秒後
には、シリコンウェハの温度は３５０℃に達しており、
印加電圧を一定値に保持してから１０秒経過後（印加開
始から２５秒経過後）には、シリコンウェハの温度は５
００℃の一定温度になった。As shown in FIG. 4, 15 seconds after the start of application, the temperature of the silicon wafer has reached 350 ° C.
After a lapse of 10 seconds (after a lapse of 25 seconds from the start of the application) after maintaining the applied voltage at a constant value, the temperature of the silicon wafer becomes 5
The temperature became constant at 00 ° C.
【００６０】次いで、真空処理槽２内にアルゴンガスを
導入し、直流電源４を起動してターゲット３に所定の負
電圧を印加してシリコンウェハの表面にＡｌ膜の成膜を
６０秒間行った後、直流電源４を停止させた。Next, an argon gas was introduced into the vacuum processing tank 2, the DC power supply 4 was started, a predetermined negative voltage was applied to the target 3, and an Al film was formed on the surface of the silicon wafer for 60 seconds. Thereafter, the DC power supply 4 was stopped.
【００６１】次に、静電チャック電源１６を一旦停止さ
せ、吸着電極１３、１４への電圧印加を終了させた後、
静電チャック電源１６を再起動し、前記静電吸着時とは
逆極性で絶対値が等しい電圧を２秒間印加し、その後、
静電チャック電源１６を再び停止させた。Next, after temporarily stopping the electrostatic chuck power supply 16 and terminating the voltage application to the suction electrodes 13 and 14,
The electrostatic chuck power supply 16 is restarted, and a voltage having a polarity opposite to that of the electrostatic chuck and having the same absolute value is applied for 2 seconds.
The electrostatic chuck power supply 16 was stopped again.
【００６２】さらに、静電チャック電源１６の再停止か
ら５秒後に、図示しない昇降機構によってシリコンウェ
ハを静電チャックプレート１１から離脱させた。Further, 5 seconds after the electrostatic chuck power supply 16 was stopped again, the silicon wafer was detached from the electrostatic chuck plate 11 by a lifting mechanism (not shown).
【００６３】以上の加熱試験を繰り返し行ったところ、
シリコンウェハに割れは全く生じなかった。When the above heating test was repeated,
No cracks occurred in the silicon wafer.
【００６４】＜実施例２＞基板６の温度が３５０℃に到
達するまでの間（１５秒間）において、各吸着電極１
３、１４に対する印加電圧を段階的に増加させた（図３
（ａ）参照）他は実施例１と同様の方法によってスパッ
タリングを行った。<Embodiment 2> Until the temperature of the substrate 6 reaches 350 ° C. (15 seconds), each of the attraction electrodes 1
The voltage applied to the electrodes 3 and 14 was increased stepwise (see FIG. 3).
(See (a)) Sputtering was performed in the same manner as in Example 1 except for the above.
【００６５】本実施例においても、シリコンウェハの温
度上昇は実施例１の場合とほぼ同一であった。また、シ
リコンウェハの割れも全く生じなかった。Also in this embodiment, the temperature rise of the silicon wafer was almost the same as in the first embodiment. Also, no cracks occurred in the silicon wafer.
【００６６】＜比較例１＞図１に示すスパッタリング装
置１を用い、５００℃以上に加熱された静電チャックプ
レート１１上に実施例と同一のシリコンウェハを設置
し、実施例１における最大電圧Ｖ1と同一の電圧を設置
後直ちに吸着電極１３、１４に印加してシリコンウェハ
を５００℃に昇温させた。この場合の吸着電極１３、１
４への印加電圧とシリコンウェハの温度変化を図４に示
す。<Comparative Example 1> Using the sputtering apparatus 1 shown in FIG. 1, the same silicon wafer as in the example was set on the electrostatic chuck plate 11 heated to 500 ° C. or higher, and the maximum voltage V in the example 1 was measured. Immediately after installing the same voltage as in 1 , the silicon wafer was heated to 500 ° C. by applying it to the adsorption electrodes 13 and 14. The adsorption electrodes 13, 1 in this case
FIG. 4 shows the voltage applied to the silicon wafer 4 and the temperature change of the silicon wafer.
【００６７】図５に示すように、この場合は、電圧印加
開始から２０秒後には、５００℃の一定温度になった。
その結果、比較例１の場合は、加熱試験を行ったうちの
半数以上のシリコンウェハに割れが生じた。As shown in FIG. 5, in this case, a constant temperature of 500 ° C. was reached 20 seconds after the start of voltage application.
As a result, in the case of Comparative Example 1, cracks occurred in more than half of the silicon wafers subjected to the heating test.
【００６８】次に、上記実施例と同一の条件でシリコン
ウェハの表面にＡｌ膜の成膜を６０秒間行った後、静電
チャック電源１６を停止させ、この停止から７秒後に、
図示しない昇降機構によってシリコンウェハを静電チャ
ックプレート１１から離脱させた。その結果、離脱試験
を行ったうちの１５％のシリコンウェハに割れが生じ
た。Next, after forming an Al film on the surface of the silicon wafer for 60 seconds under the same conditions as in the above embodiment, the electrostatic chuck power supply 16 was stopped.
The silicon wafer was separated from the electrostatic chuck plate 11 by a lifting mechanism (not shown). As a result, cracks occurred in 15% of the silicon wafers in the detachment test.
【００６９】＜比較例２＞図１に示すスパッタリング装
置１を用い、５００℃以上に加熱された静電チャックプ
レート１１上に実施例と同一のシリコンウェハを設置
し、各吸着電極１３、１４に電圧を印加せずにシリコン
ウェハを昇温させた。この場合のシリコンウェハの温度
上昇を図６に示す。<Comparative Example 2> Using the sputtering apparatus 1 shown in FIG. 1, the same silicon wafer as that of the embodiment was placed on the electrostatic chuck plate 11 heated to 500 ° C. or more, and The temperature of the silicon wafer was raised without applying a voltage. FIG. 6 shows the temperature rise of the silicon wafer in this case.
【００７０】図６に示すように、比較例２の場合は、シ
リコンウェハの温度が２５０℃に達するまでに約１８０
秒の時間を要した。As shown in FIG. 6, in the case of Comparative Example 2, the temperature of the silicon wafer reaches about 180 ° C. until it reaches 250 ° C.
Took seconds.
【００７１】次に、実施例１における最大電圧Ｖ1と同一
の電圧を吸着電極１３、１４に印加してシリコンウェハ
を５００℃に昇温させた。その結果、シリコンウェハに
割れは全く生じなかった。[0071] Next, the maximum voltages V 1 the same voltage as applied to the adsorption electrode 13 by heating the silicon wafer 500 ° C. in Example 1. As a result, no crack occurred in the silicon wafer.
【００７２】さらに、上記実施例と同一の条件でシリコ
ンウェハの表面にＡｌ膜の成膜を６０秒間行った後、静
電チャック電源１６を停止させ、各吸着電極１３、１４
への電圧印加を終了させた。Further, after forming an Al film on the surface of the silicon wafer for 60 seconds under the same conditions as in the above embodiment, the electrostatic chuck power supply 16 is stopped, and the suction electrodes 13 and 14 are turned off.
The voltage application to was terminated.
【００７３】この状態でシリコンウェハを静電チャック
プレート１１上に６０秒間保持した後に、図示しない昇
降機構によってシリコンウェハを静電チャックプレート
１１から離脱させた。その結果、離脱試験を行ったうち
の５％のシリコンウェハに割れが生じた。After holding the silicon wafer on the electrostatic chuck plate 11 for 60 seconds in this state, the silicon wafer was separated from the electrostatic chuck plate 11 by a lifting mechanism (not shown). As a result, cracks occurred in 5% of the silicon wafers in the detachment test.
【００７４】以上の実施例及び比較例から理解されるよ
うに、本発明によれば、基板６に割れを生じさせること
なく、基板６を迅速に加熱し又は静電チャックプレート
１１から離脱できることが明らかになった。As understood from the above Examples and Comparative Examples, according to the present invention, the substrate 6 can be quickly heated or separated from the electrostatic chuck plate 11 without causing the substrate 6 to crack. It was revealed.
【００７５】[0075]
【発明の効果】以上述べたように本発明によれば、処理
対象物に割れを生じさせることなく処理対象物を迅速に
加熱又は冷却することができる。したがって、本発明の
真空処理方法及び真空処理装置によれば、効率良く真空
処理を行うことができる。As described above, according to the present invention, the object to be processed can be quickly heated or cooled without causing the object to be cracked. Therefore, according to the vacuum processing method and the vacuum processing apparatus of the present invention, the vacuum processing can be performed efficiently.
【図１】本発明に係る真空処理装置の一実施の形態であ
るスパッタリング装置の概略構成図FIG. 1 is a schematic configuration diagram of a sputtering apparatus which is an embodiment of a vacuum processing apparatus according to the present invention.
【図２】本発明の第１の実施の形態を示すもので、吸着
電極に対する印加電圧のパターンと基板の温度との関係
を示すグラフFIG. 2 shows the first embodiment of the present invention, and is a graph showing a relationship between a pattern of a voltage applied to an adsorption electrode and a temperature of a substrate.
【図３】（ａ）：本発明の第２の実施の形態を示すもの
で、静電チャックの吸着電極に対する印加電圧のパター
ンの他の例を示すグラフ （ｂ）：本発明の第３の実施の形態を示すもので、静電
チャックの吸着電極に対する印加電圧のパターンのさら
に他の例を示すグラフFIG. 3A shows a second embodiment of the present invention, and is a graph showing another example of a pattern of a voltage applied to a chucking electrode of an electrostatic chuck. FIG. 3B is a graph showing a third embodiment of the present invention. 6 is a graph showing an embodiment and showing still another example of a pattern of a voltage applied to an attraction electrode of an electrostatic chuck.
【図４】本発明の実施例１の結果を示すもので、吸着電
極に対する印加電圧のパターンと基板の温度との関係を
示すグラフFIG. 4 is a graph showing a result of Example 1 of the present invention, showing a relationship between a pattern of a voltage applied to an adsorption electrode and a temperature of a substrate.
【図５】本発明の比較例１の結果を示すもので、吸着電
極に対する印加電圧のパターンと基板の温度との関係を
示すグラフFIG. 5 is a graph showing a result of Comparative Example 1 of the present invention, showing a relationship between a pattern of a voltage applied to an adsorption electrode and a temperature of a substrate.
【図６】本発明の比較例２の結果を示すもので、吸着電
極に対する印加電圧のパターンと基板の温度との関係を
示すグラフFIG. 6 is a graph showing a result of Comparative Example 2 of the present invention, showing a relationship between a pattern of a voltage applied to an adsorption electrode and a temperature of a substrate.
１…スパッタリング装置 ２…真空処理槽 ６…基板
（処理対象物） ７…静電チャック（加熱冷却体、加熱
冷却装置） １１…静電チャックプレート（静電チャッ
ク本体） １２…ヒーター（加熱冷却手段） １３、１
４…吸着電極 １６…静電チャック電源DESCRIPTION OF SYMBOLS 1 ... Sputtering apparatus 2 ... Vacuum processing tank 6 ... Substrate (processing object) 7 ... Electrostatic chuck (heating / cooling body, heating / cooling apparatus) 11 ... Electrostatic chuck plate (electrostatic chuck body) 12 ... Heater (heating / cooling means) ) 13, 1
4: suction electrode 16: electrostatic chuck power supply
───────────────────────────────────────────────────── フロントページの続き (72)発明者 森本 直樹 静岡県裾野市須山1220−14 日本真空技術 株式会社富士裾野工場内 Ｆターム(参考） 4K029 AA06 BA03 CA05 DA08 EA08 JA05 5F004 AA16 BB22 CA03 5F045 AA19 EM05 GB05 5F103 AA08 BB33 BB41 BB56 RR10 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Naoki Morimoto 1220-14 Suyama, Susono City, Shizuoka Prefecture Japan Vacuum Engineering Co., Ltd. Fuji Susono Plant F-term (reference) 4K029 AA06 BA03 CA05 DA08 EA08 JA05 5F004 AA16 BB22 CA03 5F045 AA19 EM05 GB05 5F103 AA08 BB33 BB41 BB56 RR10
Claims (7)
着させて該処理対象物を加熱冷却する工程を有する真空
処理方法であって、 前記処理対象物を加熱冷却する際、少なくとも当該処理
対象物の温度が所定の温度に到達するまでの間におい
て、前記加熱冷却体に設けられた吸着電極に対してその
印加電圧が累積的に増加するように所定の電圧を印加す
ることを特徴とする真空処理方法。1. A vacuum processing method comprising a step of heating and cooling an object to be processed by electrostatically adsorbing the object to be processed in a heating and cooling body in a vacuum. Until the temperature of the processing target reaches the predetermined temperature, applying a predetermined voltage to the adsorption electrode provided on the heating and cooling body so that the applied voltage is cumulatively increased. Characteristic vacuum processing method.
せることを特徴とする請求項１記載の真空処理方法。2. The vacuum processing method according to claim 1, wherein the voltage applied to the adsorption electrode is gradually increased.
させることを特徴とする請求項２記載の真空処理方法。3. The vacuum processing method according to claim 2, wherein the voltage applied to the attraction electrode is linearly increased.
させることを特徴とする請求項２記載の真空処理方法。4. The vacuum processing method according to claim 2, wherein the voltage applied to the suction electrode is increased stepwise.
を特徴とする請求項１又は２のいずれか１項記載の真空
処理方法。5. The vacuum processing method according to claim 1, wherein a pulsed voltage is applied to the attraction electrode.
本体と、 該静電チャック本体内に設けられた加熱冷却手段と、 前記吸着電極に対して印加電圧を逐次変化させながら印
加するように構成された静電チャック電源とを備えたこ
とを特徴とする加熱冷却装置。6. An electrostatic chuck body having an attraction electrode in a dielectric body, a heating / cooling means provided in the electrostatic chuck body, and applying a voltage to the attraction electrode while sequentially changing an applied voltage. A heating and cooling device, comprising: a configured electrostatic chuck power supply.
加熱冷却装置が設けられていることを特徴とする真空処
理装置。7. A vacuum processing apparatus, wherein the heating and cooling device according to claim 6 is provided at a predetermined position of a vacuum processing tank.
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| JP33224299A JP4330737B2 (en) | 1999-11-24 | 1999-11-24 | Vacuum processing method |
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| JP4330737B2 JP4330737B2 (en) | 2009-09-16 |
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