JP2001133810A - Liquid crystal display device and method of producing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal display device which can prevent deterioration in the picture quality or decrease in the luminance caused when the incident light passing through a pixel opening is refracted by a SiNx film extending from a light-shielding part to the pixel opening part and the light enters the silicon active region of the pixel transistor. SOLUTION: A TFT type pixel transistor 24 is produced by forming a second insulating film 20 as a gate insulating film on a silicon active region 16a and further forming a gate line 22a thereon. A PSG film 32 which functions as a hydrogen supply film to the silicon active region 16a is formed above the TFT pixel transistor 24, and a SiNx film 34a which functions as a cap film to prevent external diffusion of hydrogen is formed thereon. The upper face of the SiNx film 34a is completely covered with a Ti metal light-shielding film 36a, and the SiNx film 34a is prevented from extending to the pixel opening from the light-shielding part where the Ti metal light-shielding film 36a is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a liquid crystal display, and more particularly to an active matrix driving type liquid crystal display using a TFT (Thin Film Transistor) and a method of manufacturing the same.

[0002]

2. Description of the Related Art A conventional method of manufacturing a transmission type liquid crystal display device will be described with reference to FIGS.
2 will be described with reference to a plan view. In each of FIGS. 27 to 30, (a) shows a pixel transistor portion, and (b) shows an additional capacitance portion.

As shown in FIGS. 27A and 27B,
After a conductive light-shielding film 62 is formed on each of the pixel transistor portion and the additional capacitance portion on the transparent insulating substrate 60, a first insulating film 64 made of, for example, a SiO ₂ (silicon oxide) film is formed on the entire surface of the base.

Subsequently, after forming, for example, a polysilicon film or an amorphous silicon film on the first insulating film 64, the polysilicon film or the amorphous silicon film is patterned into a predetermined shape to form a first film above the conductive light-shielding film 62 in the pixel transistor portion. A silicon active region 66a is formed on the insulating film 64, and a silicon lower electrode of an additional capacitance connected to one end of the silicon active region 66a is formed on the first insulating film 64 above the conductive light-shielding film 62 of the additional capacitance portion. 66b is formed.

Subsequently, a second insulating film 68 made of, for example, an SiO ₂ film is formed to cover the upper surface and the side surfaces of the silicon active region 66a and the silicon lower electrode 66b, respectively.

Subsequently, after depositing a conductive polysilicon film into which impurities are introduced, for example, over the entire surface of the substrate,
The silicon active region 66 is patterned into a predetermined shape.
a, a gate line 70a of the pixel transistor crossing over the second insulating film 68 above and a capacitor line 7 crossing over the second insulating film 68 above the silicon lower electrode 66b.
0b is formed.

Thus, a TFT pixel transistor 7 having a gate line 70a provided on a silicon active region 66a via a second insulating film 68 as a gate insulating film.
2 and a second insulating film 68 as a dielectric film between the silicon lower electrode 66b and the additional capacitance line 70b.
Are formed to form an additional capacitor 74.

Subsequently, for example, PSG is applied over the entire surface of the substrate.
(Phospho Silicate Glass) After depositing a third insulating film 76 made of a film, the third insulating film 76 and the second insulating film 68 are selectively removed by etching. A first contact hole exposing the surface of the silicon active region 66a serving as a source region is formed, and a second contact hole exposing the surface of the silicon lower electrode 66b of the additional capacitor 74 is formed.

Subsequently, for example, Al is formed on the third insulating film 76.
After depositing the (aluminum) film, it is patterned into a predetermined shape. Thus, the Al data line 78a is formed on the third insulating film 76, and the Al data line 78a is formed.
Is connected to the silicon active region 66a on the source side of the pixel transistor 72 via the first contact hole. At the same time, an Al electrode 78b is formed on the third insulating film 76 so as to cover the upper portion of the additional capacitor 74 and not contact the data line 78a, and the Al electrode 78b is added via the second contact hole. The capacitor 74 is connected to the silicon lower electrode 66b.

Subsequently, for example, a PSG film 80 and a SiN _x (silicon nitride) film 82 are sequentially laminated from the bottom on the entire surface of the substrate, and then heat treatment is performed under predetermined conditions to contain the PSG film 80. The supplied hydrogen is supplied to the silicon active region 66a of the pixel transistor 72. Thus, the traps at the polycrystalline grain boundaries of the silicon active region 66a are filled with hydrogen, and the carrier mobility of the silicon active region 66a is improved. That is, the PSG film 80 here is
The SiN _x film 82 functions as a hydrogen supply film for the silicon active region 66 a of the pixel transistor 72, and also functions as a cap film for preventing the outward diffusion of hydrogen from the PSG film 80 when the hydrogen is supplied.

Next, as shown in FIGS. 28 (a) and 28 (b), the PSG film 80 and the SiN _x film 82 are selectively removed by etching, so that the silicon lower electrode 6 of the additional capacitor 74 is formed.
And forming a third contact hole exposing the Al electrode 78b surface to be connected to 6b, a SiN _X film 82 is selectively etched away, a shape that covers the upper pixel transistor 72 and the additional capacitor 74 SiN _X Membrane 82
a is left. Incidentally, to selective etching removes the SiN _X film 82 is for performing in the incident light is removed with a high refractive index SiN _X film 82 from the pixel openings that transmit, the pixel transistor SiN _X film 82a The reason why the PSG film 80 is left above the additional capacitance 72 and the additional capacitance 74 is for insulation reinforcement of the PSG film 80.

Subsequently, a PSG film 80 and a SiN _x film 82
After depositing a Ti (titanium) film on a, it is patterned into a predetermined shape. Thus, the Ti metal light shielding film 84a constituting the black matrix is formed on the SiN _x film 82a to cover the pixel transistor 72, the additional capacitance line 70b, and the gate line 70a. At the same time, additional capacity 7
4. A Ti light-shielding electrode film 84b connected to the Al electrode 78b covering the upper
It is formed so as to be electrically insulated from the metal light-shielding film 84a.

Next, as shown in FIGS. 29A and 29B, an insulating film made of, for example, an SiO ₂ film is deposited on the entire surface of the substrate, and the surface of the insulating film is flattened. A film 86 is formed. Then, the flattening insulating film 8
6 is selectively removed by etching to form a Ti light-shielding electrode film 84.
b. A fourth contact hole exposing the surface is formed.

Subsequently, for example, an IT
A transparent ITO pixel electrode 88 made of an O (Indium Tin Oxide) film is formed, and this ITO pixel electrode 88 is connected to the Ti light shielding electrode film 84b via a fourth contact hole. That is, the ITO pixel electrode 88 is connected to the silicon lower electrode 66b via the Ti light shielding electrode film 84b and the Al electrode 78b.

Next, after dicing the transparent insulating substrate 60, a series of assembling operations are further performed. That is, FIG.
As shown in (a) and (b), an opposing transparent substrate 92 having a transparent opposing electrode layer 90 for obtaining an opposing electrode potential formed on the surface is placed on the surface of the transparent insulating substrate 60 on which the pixel transistors 72 and the like are formed. Seal them facing each other.

Subsequently, a liquid crystal is injected between the flattening insulating film 86 on the transparent insulating substrate 60 and the ITO pixel electrode 88 and the transparent counter electrode layer 90 on the counter transparent substrate 92, and then sealed to form a liquid crystal layer. Form 94. Thus, a transmission type liquid crystal display device is manufactured. The layout of the completed transmission type liquid crystal display device is as shown in FIGS. 31 and 32. Here, FIG. 31 shows the Al data line 78a.
FIG. 32 shows a portion below the gate line 70a and the additional capacitance line 70b.

[0017]

In the above-mentioned conventional liquid crystal display device, when hydrogen is supplied from the PSG film 80 to the silicon active region 66a of the pixel transistor 72, a cap film for preventing outward diffusion of hydrogen is provided. The SiN _x film 82 functioning as a pattern is patterned into a SiN _x film 82a having a shape covering the pixel transistor 72 and the additional capacitor 74, the PSG film 80 and the Ti metal light shielding film 84a.
And intervenes between them.

At this time, the SiN _x film 82a is made of Al
In order to provide a sufficient margin for insulation reinforcement of the PSG film 80 that insulates between the data line 78a and the Ti metal light-shielding film 84a, the PSG film 80 is usually patterned in a shape protruding from the pattern of the Ti metal light-shielding film 84a. . That is, Si
N _X film 82a is incident light has a shape that protrudes in the pixel opening for transmitting the light shielding portion Ti metal light 84a or the like in a liquid crystal display device is formed.

For this reason, as shown in FIG. 33, when light enters from above a transmission type liquid crystal display device, for example, T
When passing through the pixel opening near the light-shielding portion where the i-metal light-shielding film 84a and the like are formed, the incident light passes through the upper-layer flattening insulating film 86 and then projects from the light-shielding portion to the pixel opening. The light is incident on the SiN _x film 82a. Here, the SiN _x film 82a has a much higher refractive index than the planarized insulating film 86 made of a SiO ₂ film. Incidentally, when the refractive index of the SiN _x film is compared with that of the SiO ₂ film, the refractive index of the SiN _x film is about 2.05 and the refractive index of the SiO ₂ film is about 1.46, although it depends on the film quality. It is.

Therefore, the light incident on the SiN _x film 82a is largely refracted and incident on the silicon active region 66a of the pixel transistor 72. Since the silicon active region 66a of the pixel transistor 72 has a property of absorbing light in the visible light region, a light leakage current occurs in the silicon active region 66a, causing a bright spot, crosstalk, and the like. There is a problem that the image quality of the display device is deteriorated.

Further, the light transmittance of incident light passing through the pixel opening is reduced by the amount of refraction by the SiN _x film 82a projecting from the light-shielding portion to the pixel opening, so that the brightness of the liquid crystal display device is reduced. There was also a problem.

Accordingly, the present invention has been made in view of the above problems, and the incident light passing through the pixel opening is refracted by the SiN _x film projecting from the light-shielding portion to the pixel opening, so that the silicon of the pixel transistor is It is an object of the present invention to provide a liquid crystal display device and a method of manufacturing the liquid crystal display device, which can prevent deterioration of image quality and luminance due to incidence on an active region.

[0023]

The above objects can be attained by the following liquid crystal display device and a method of manufacturing the same according to the present invention. That is, the liquid crystal display device according to claim 1 includes a transparent insulating substrate, a thin film transistor formed on the transparent insulating substrate, and a gate electrode provided on a semiconductor active region via a gate insulating film, and a thin film transistor. An insulating film covering the entire surface of the base including the insulating film, a nitride film formed on the insulating film and covering the upper part of the thin film transistor, and a light-shielding film formed by completely covering the upper surface of the nitride film. A planarizing insulating film covering the entire surface of the base including the light-shielding film, a pixel electrode formed on the planarizing insulating film, a counter substrate facing the transparent insulating substrate, and And a liquid crystal layer sandwiched between the pixel electrode and the counter electrode on the counter substrate, and a planarizing insulating film on the transparent insulating substrate.

As described above, in the liquid crystal display device according to the first aspect, since the light shielding film is formed so as to completely cover the upper surface of the nitride film, incident light from the light shielding portion where the light shielding film is formed. It is possible to prevent the nitride film from protruding into the pixel opening through which light passes. Therefore, even when the incident light passes through the pixel opening near the light shielding portion, it does not enter the nitride film. Therefore, due to the large refraction of the light incident on the nitride film having a high refractive index, the refracted light incident on the semiconductor active region of the thin film transistor generates a light leak current, which causes a bright spot, crosstalk, etc. It is possible to prevent the deterioration of the image quality and the reduction of the light transmittance of the incident light passing through the pixel opening and the reduction of the luminance.

According to a second aspect of the present invention, in the liquid crystal display device according to the first aspect, the light shielding film is formed so as to cover not only the upper surface of the nitride film but also the side surface thereof. By doing so, it is possible to prevent the nitride film from protruding from the light-shielding portion where the light-shielding film is formed to the pixel opening through which the incident light is transmitted, so that the incident light is transmitted through the pixel opening near the light-shielding portion. Also, the light does not enter the nitride film, and the same operation as in the case of the first aspect is produced.

According to a third aspect of the present invention, there is provided a liquid crystal display device comprising: a transparent insulating substrate; a thin film transistor formed on the transparent insulating substrate and provided with a gate electrode on a semiconductor active region via a gate insulating film; Insulating film (excluding nitride film) covering the entire surface of the substrate including this thin film transistor
And formed directly on this insulating film (excluding the nitride film)
A light-shielding film covering the upper part of the thin film transistor, and a planarizing insulating film covering the entire surface of the base including the light-shielding film;
A pixel electrode formed on the flattening insulating film, a counter substrate facing the transparent insulating substrate, a counter electrode formed on the counter substrate, a flattening insulating film on the transparent insulating substrate, and A liquid crystal layer sandwiched between the pixel electrode and the counter electrode on the counter substrate.

As described above, in the liquid crystal display device according to the third aspect, since the light-shielding film is formed directly on the insulating film (excluding the nitride film), the conventional light-shielding portion on which the light-shielding film is formed is formed. Because there is no high-refractive-index nitride film that caused incident light transmitted through the neighboring pixel openings to refract, light greatly refracted by such a nitride film is incident on the semiconductor active region of the thin-film transistor. The occurrence of a situation that causes deterioration of the image quality and luminance of the image is prevented.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, comprising: forming a thin film transistor having a gate electrode provided on a semiconductor active region via a gate insulating film on a transparent insulating substrate. A second step of sequentially laminating an insulating film containing hydrogen and a nitride film on the entire surface of the substrate and then performing a predetermined heat treatment; and forming a light shielding film on the entire surface of the substrate, and then forming a light shielding film and a nitride film. A third step of patterning the film into the same shape to leave a light-shielding film and a nitride film covering the upper part of the thin film transistor; and forming a planarizing insulating film on the entire surface of the substrate, and then forming the film on the planarizing insulating film. A fourth step of forming a pixel electrode, a fifth step of forming a counter electrode on the counter substrate, and a step of causing the transparent insulating substrate and the counter substrate to face each other. Electrode and counter substrate And having a, a sixth step of sealing liquid crystal is injected between the poles.

As described above, in the method of manufacturing a liquid crystal display device according to the fourth aspect, a thin film transistor is formed on a transparent insulating substrate, and an insulating film containing hydrogen and a nitride film are sequentially laminated to form a predetermined heat treatment. After that, the light-shielding film and the nitride film formed on the entire surface of the substrate are patterned into the same shape, and the light-shielding film and the nitride film covering the upper part of the thin film transistor are left. The function of preventing the outward diffusion of hydrogen when supplying hydrogen and the function of reinforcing the insulation of the insulating film are exerted on the nitride film, and the upper surface of the nitride film is completely covered with the light shielding film to form the light shielding film. The nitride film is prevented from protruding from the light shielding portion to the pixel opening through which the incident light is transmitted. Therefore, even when the incident light passes through the pixel opening near the light shielding portion, it does not enter the nitride film. Therefore, due to the large refraction of the light incident on the nitride film having a high refractive index, the refracted light incident on the semiconductor active region of the thin film transistor generates a light leak current, which causes a bright spot, crosstalk, etc. It is possible to prevent the deterioration of the image quality and the reduction of the light transmittance of the incident light passing through the pixel opening and the reduction of the luminance.

According to a fifth aspect of the present invention, there is provided a method for manufacturing a liquid crystal display device, comprising: forming a thin film transistor having a gate electrode provided on a semiconductor active region via a gate insulating film on a transparent insulating substrate. A second step of sequentially forming a hydrogen-containing insulating film and a nitride film on the entire surface of the base, and then performing a predetermined heat treatment, and patterning the nitride film into a predetermined shape to form an upper portion of the thin film transistor. After the nitride film to be covered is left, a third step of forming a light-shielding film that completely covers the upper surface and side surfaces of the nitride film, and after forming a flattening insulating film over the entire substrate, A fourth step of forming a pixel electrode on the film, and
A fifth step of forming a counter electrode, the step of causing the transparent insulating substrate and the counter substrate to face each other, and injecting liquid crystal between the planarizing insulating film on the transparent insulating substrate and the pixel electrode and the counter electrode on the counter substrate. And a sixth step of sealing.

As described above, in the method of manufacturing a liquid crystal display device according to the fifth aspect, a thin film transistor is formed on a transparent insulating substrate, and an insulating film containing hydrogen and a nitride film are sequentially formed to form a predetermined heat treatment. Then, the nitride film is patterned into a predetermined shape to leave a nitride film that covers the upper part of the thin film transistor, and a light-shielding film that completely covers the upper surface and side surfaces of the nitride film is formed. The function of preventing out-diffusion of hydrogen and the function of reinforcing the insulation of the insulating film when supplying hydrogen to the semiconductor active region of the thin film transistor is exhibited by the nitride film, and the upper surface and side surfaces of the nitride film are completely covered with the light shielding film. As a result, the nitride film is prevented from protruding from the light-shielding portion where the light-shielding film is formed to the pixel opening through which the incident light is transmitted. Therefore, as in the case of the fourth aspect, even when the incident light passes through the pixel opening in the vicinity of the light shielding portion, it does not enter the nitride film having a high refractive index. It is possible to prevent a situation in which the image quality is degraded and the luminance is reduced due to the refraction of the incident light due to the nitride film.

According to a sixth aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, comprising: forming a thin film transistor having a gate electrode provided on a transparent insulating substrate on a semiconductor active region via a gate insulating film. And a second step of performing a predetermined heat treatment after sequentially forming an insulating film containing hydrogen and a nitride film on the entire surface of the base, and removing the nitride film.
A third step of forming a light-shielding film covering the upper part of the thin film transistor on the insulating film; and forming a flattening insulating film on the entire surface of the base, and forming a pixel electrode on the flattening insulating film. A fifth step of forming a counter electrode on the counter substrate; and a step of causing the transparent insulating substrate and the counter substrate to face each other, the planarizing insulating film on the transparent insulating substrate, and the pixel electrode and the counter electrode on the counter substrate. And a sixth step of injecting a liquid crystal and sealing the liquid crystal.

As described above, in the method of manufacturing a liquid crystal display device according to the sixth aspect, a thin film transistor is formed on a transparent insulating substrate, and an insulating film containing hydrogen and a nitride film are sequentially formed to form a predetermined heat treatment. After removing the nitride film, a function of preventing outward diffusion of hydrogen when supplying hydrogen from the insulating film to the semiconductor active region of the thin film transistor by forming a light shielding film on the insulating film above the thin film transistor. Is exerted on the nitride film, and the nitride film is removed and the light-shielding film is formed directly on the insulating film. The nitride film having a high rate no longer exists. Therefore, as in the case of the fourth aspect, even when the incident light passes through the pixel opening in the vicinity of the light shielding portion, it does not enter the nitride film having a high refractive index. It is possible to prevent a situation in which the image quality is degraded and the luminance is reduced due to the refraction of the incident light due to the nitride film.

[0034]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.
An embodiment of the present invention will be described. (First Embodiment) FIG. 1 is a sectional view showing a pixel transistor portion of a transmission type liquid crystal display device according to a first embodiment of the present invention, and FIG. 2 is a sectional view showing a first embodiment of the present invention. FIG. 4 is a cross-sectional view illustrating an additional capacitance section of a transmission type liquid crystal display device. 3 to 8 are process cross-sectional views for explaining a method of manufacturing the transmissive liquid crystal display device shown in FIGS. 1 and 2, respectively, and FIG. 3A shows a pixel transistor portion. ,
(B) shows the additional capacitance section. FIG. 9 is an enlarged sectional view for explaining the operation when light is incident on the transmission type liquid crystal display device shown in FIG.

As shown in FIGS. 1 and 2, in the transmissive liquid crystal display device according to the present embodiment, the conductive light-shielding films 12a, 12b are provided on the transparent insulating substrate 10 of the pixel transistor portion and the additional capacitance portion, respectively. 12b is formed in a continuous state.

Here, as the material of the transparent insulating substrate 10, for example, a quartz substrate or a non-alkali glass substrate is used. The material of the conductive light-shielding films 12a and 12b is, for example, metal pus such as Al, Ti, W (tungsten) or Mo (molybdenum), MoSi (molybdenum silicide), TiSi (titanium silicide), or WSi (tungsten silicide). And the like. Also,
These conductive light-shielding films 12a and 12b have a source potential V
_ss , the common electrode potential V _com , the drain potential V _dd, or any other fixed potential.

A first insulating film 14 is formed on the transparent insulating substrate 10 and the conductive light-shielding films 12a and 12b.
It covers the whole surface. As a material of the first insulating film 14, for example, an SiO ₂ film or the like is used.

As shown in FIG. 1, a silicon active region 16a made of, for example, a polysilicon film or an amorphous silicon film is formed on the first insulating film 14 above the conductive light-shielding film 12a in the pixel transistor portion. For example, S covering the upper and side surfaces of the silicon active region 16a
A _second insulating film 20 made of an iO ₂ film or the like, and a gate line 22a made of, for example, a conductive polysilicon film crossing over the second insulating film 20 are formed. That is, the second insulating film 2 as a gate insulating film is formed on the silicon active region 16a.
A pixel transistor 24 of a TFT type provided with a gate line 22a via 0 is formed.

As shown in FIG. 2, the silicon active region 16a of the pixel transistor 24 is formed on the first insulating film 14 above the conductive light-shielding film 12b in the additional capacitance portion.
A silicon electrode 16b made of, for example, a polysilicon film or an amorphous silicon film is connected to one end of the substrate. That is, the conductive light-shielding film 12 functioning as a lower electrode
A first additional capacitance 18 in which a first insulating film 14 as a dielectric film is sandwiched between the first electrode b and the silicon electrode 16b functioning as an upper electrode.

On the silicon electrode 16b, for example, Si covering the upper and side surfaces of the silicon electrode 16b is formed.
A _second insulating film 20 made of an O ₂ film or the like, and an additional capacitance line 22b made of, for example, a conductive polysilicon film crossing over the second insulating film 20 are formed. That is, the second additional capacitance 26 in which the second insulating film 20 as a dielectric film is interposed between the silicon electrode 16b functioning as a lower electrode and the additional capacitance line 22b functioning as an upper electrode is formed. I have. Here, the gate line 22a and the additional capacitance line 22b are substantially parallel to each other in plan view.

As shown in FIGS. 1 and 2, a third insulating film 28 made of a PSG film is formed on the entire surface of the substrate including the pixel transistor 24 and the second additional capacitance 26. Then, an Al data line 30a connected to the silicon active region 16a on the source side of the pixel transistor 24 via the first contact hole opened in the third insulating film 28 is formed on the third insulating film 28. ing.

The second insulating film 28
An Al electrode 30b connected to the silicon electrode 16b of the second additional capacitor 26 through the contact hole is formed on the third insulating film 28. Here, the Al data line 30a is planarly connected to the gate line 22a and the additional capacitance line 22b of the pixel transistor 24 with the third insulating film 28 interposed therebetween.
And almost going straight. Also, the Al electrode 30b
Covers the upper part of the second additional capacitor 26 and does not contact the Al data line 30a.

The Al data line 30a and the Al electrode 30
The PSG film 32 is formed on the entire surface of the base including the layer b. Further, SiN is formed on the PSG film 32 above the pixel transistor 24, the gate line 22a, and the additional capacitance line 22b.
_{An X} film 34a is formed. A Ti metal light-shielding film 36a constituting a black matrix is formed on the SiN _x film 34a which covers the pixel transistors 24 and the gate lines 22a, and completely covers the upper surface of the SiN _x film 34a.

The Al electrode 30 is also formed on the SiN _x film 34a above the additional capacitance line 22b through the third contact hole opened in the SiN _x film 34a and the PSG film 32.
b connected through a third contact hole to Ti
The light-shielding electrode film 36b is formed, and completely covers the upper surface of the SiN _x film 34a. Here, the Ti metal light shielding film 36a and the Ti light shielding electrode film 36b are formed so as to be electrically insulated from each other.

As described above, the SiN _x film 34 a formed on the PSG film 32 has its upper surface covered with the Ti metal light shielding film 3.
6a and the Ti light-shielding electrode film 36b are completely covered by the Ti metal light-shielding film 36a and the Ti light-shielding electrode film 36.
The present embodiment is characterized in that the SiN _x film 34a does not protrude from the light-shielding portion where the b (and the conductive light-shielding films 12a and 12b) are formed to the pixel opening for transmitting the incident light.

Further, a flattening insulating film 38 made of, for example, an SiO ₂ film and having a flat surface is formed on the entire substrate including the Ti metal light-shielding film 36a and the Ti light-shielding electrode film 36b. Further, on the planarization insulating film 38, for example, ITO
A transparent ITO pixel electrode 40 made of a film is formed. The ITO pixel electrode 40 is connected to Ti via a fourth contact hole opened in the planarizing insulating film 38.
It is connected to the light shielding electrode film 36b. That is, the ITO pixel electrode 40 is connected to the silicon electrode 16b of the first and second additional capacitors 18 and 26 via the Ti light-shielding electrode film 36b and the Al electrode 30b.

A counter transparent substrate 44 having a transparent counter electrode layer 42 for obtaining a counter electrode potential formed on the surface thereof is opposed to the surface of the transparent insulating substrate 10 on which the pixel transistors 24 and the like are formed. A liquid crystal layer 46 is provided between the planarizing insulating film 38 on the transparent insulating substrate 10 and the ITO pixel electrode 40 and the transparent counter electrode layer 42 of the counter transparent substrate 44.
Are formed. Here, the transparent counter electrode layer 42
For example, an ITO film is used as the material of the counter substrate, and a non-alkali glass substrate or a quartz substrate is used as the material of the counter transparent substrate 44, for example.

Next, a method of manufacturing the transmission type liquid crystal display device shown in FIGS. 1 and 2 will be described with reference to FIGS. First, as shown in FIGS. 3A and 3B, after the conductive light-shielding films 12a and 12b are formed in the pixel transistor portion and the additional capacitance portion on the transparent insulating substrate 10 in a continuous state, respectively. A first insulating film 14 made of, for example, an SiO ₂ film is formed on the entire surface of the base.

Subsequently, after forming, for example, a polysilicon film or an amorphous silicon film on the first insulating film 14, the conductive insulating film 12 is patterned into a predetermined shape.
A silicon active region 16a and a silicon electrode 16b connected to one end thereof are formed on the first insulating film 14 above a and 12b.

Thus, the conductive light-shielding film 12b functioning as a lower electrode and the silicon electrode 1 functioning as an upper electrode
6b to form a first additional capacitance 18 in which the first insulating film 14 as a dielectric film is sandwiched.

Subsequently, the silicon active region 16a of the pixel transistor portion and the silicon electrode 1 of the first additional capacitance 18
A second insulating film 20 made of, for example, an SiO ₂ film or the like is formed so as to cover each of the second insulating films 6b.

Subsequently, a conductive polysilicon film into which impurities are introduced, for example, is deposited on the entire surface of the substrate. Then, the conductive polysilicon film is patterned into a predetermined shape, and the gate line 22a of the pixel transistor crossing over the second insulating film 20 above the silicon active region 16a.
And an additional capacitance line 22b crossing over the second insulating film 20 above the silicon electrode 16b.

Thus, the TFT pixel transistor 2 having the gate line 22a provided on the silicon active region 16a via the second insulating film 20 as a gate insulating film.
4 and a silicon electrode 16b functioning as a lower electrode and an additional capacitance line 22b functioning as an upper electrode
To form a second additional capacitance 26 in which a second insulating film 20 as a dielectric film is interposed.

Next, as shown in FIGS. 4A and 4B, a third insulating film 28 made of, for example, a PSG film is deposited on the entire surface of the substrate, and then the third insulating film 28 and the third insulating film 28 are formed. The second insulating film 20 is selectively removed by etching. Thus, a first contact hole for exposing the surface of the silicon active region 16a serving as a source region of the pixel transistor 24 is formed, and a second contact hole for exposing the surface of the silicon electrode 16b functioning as a lower electrode of the second additional capacitor 26 is formed.
Is formed.

Subsequently, after depositing an Al film on the third insulating film 28, it is patterned into a predetermined shape. Thus, the Al data line 30a is formed on the third insulating film 28, and the Al data line 30a is connected to the silicon active region 16a on the source side of the pixel transistor 24 via the first contact hole. At the same time, an Al electrode 30b is formed on the third insulating film 28 so as to cover the upper portion of the second additional capacitor 26 and not to contact the Al data line 30a, and the Al electrode 30b is connected to the second contact hole. To the silicon electrode 16b functioning as a lower electrode of the second additional capacitor 26.

Subsequently, for example, a PSG film 32 and a SiN _x film 34 are sequentially laminated from the bottom on the entire surface of the base, and then heat treatment is performed under predetermined conditions to remove hydrogen contained in the PSG film 32. It is supplied to the silicon active region 16a of the pixel transistor 24. Thus, the traps at the polycrystalline boundaries in the silicon active region 16a are buried with hydrogen, and the carrier mobility in the silicon active region 16a is improved.

That is, the PSG film 32 here functions as a hydrogen supply film for the silicon active region 16a of the pixel transistor 24, and the SiN _x film 34 removes hydrogen from the PSG film 32 when supplying hydrogen. It functions as a cap film for preventing diffusion.

Next, as shown in FIGS. 5A and 5B, the SiN _x film 34 and the PSG film 32 are selectively removed by etching to cover the area above the second additional capacitor 26.
After forming a third contact hole exposing the surface of the electrode 30b, a Ti film 36 is deposited on the entire surface of the base.

Next, as shown in FIGS. 6A and 6B, using a resist film (not shown) patterned in a predetermined shape as a mask, the Ti film 36 and the SiN _x film 34 are used.
Are continuously etched to form a Ti film 36 and a SiN _x film 3.
4 is patterned into the same shape. Thus, the Ti metal light shielding film 36a constituting the black matrix is
_It is formed on the _x film 34a and covers the pixel transistor 24, the gate line 22a, and the additional capacitance line 22b.

At the same time, the Ti light-shielding electrode film 36 b connected to the Al electrode 30 b covering the upper part of the second additional capacitor 26 through the third contact hole is changed to the Ti metal light-shielding film 36.
a is formed on the SiN _x film 34a so as to be electrically insulated therefrom. At this time, the present embodiment is characterized in that the upper surface of the SiN _x film 34a is completely covered with the Ti metal light shielding film 36a and the Ti light shielding electrode film 36b.

Next, as shown in FIGS. 7A and 7B, an insulating film made of, for example, an SiO ₂ film is deposited on the entire surface of the substrate, and the surface of the insulating film is flattened. A film 38 is formed. Then, the flattening insulating film 38
Is selectively removed by etching to form a fourth contact hole exposing the surface of the Ti light-shielding electrode film 36b.

Subsequently, on the flattening insulating film 38, for example, I
A transparent ITO pixel electrode 40 made of a TO film is formed, and this ITO pixel electrode 40 is connected to the Ti light-shielding electrode film 36b via a fourth contact hole. Thus, the ITO pixel electrode 40 is connected to the silicon electrode 16b via the Ti light shielding electrode film 36b and the Al electrode 30b.

Thus, on the transparent insulating substrate 10,
A pixel transistor 24, a gate line 22a connected to the pixel transistor 24, and an Al data line 30a are formed, and the first and second additional capacitances 18 and 26 and the first and second additional capacitances 18 and 26 are provided with Al electrodes. An ITO pixel electrode 40 connected via the electrode 30b or the like is formed.

Next, after dicing the transparent insulating substrate 10, a series of assembling operations are further performed. That is, FIG.
As shown in (a) and (b), an opposing transparent substrate 44 made of, for example, an alkali-free glass substrate or a quartz substrate having a transparent opposing electrode layer 42 made of, for example, an ITO film formed on the surface for obtaining an opposing electrode potential is used. Then, the transparent insulating substrate 10 is sealed so as to face the surface on which the pixel transistors 24 and the like are formed.

Subsequently, a liquid crystal is injected between the flattening insulating film 38 on the transparent insulating substrate 10 and the ITO pixel electrode 40 and the transparent counter electrode layer 42 of the counter transparent substrate 44, and the liquid crystal layer is sealed. 46 is formed. As described above, the transmission type liquid crystal display device shown in FIGS. 1 and 2 is manufactured.

Next, the operation when light is incident on the transmission type liquid crystal display device shown in FIGS. 1 and 2 will be described with reference to FIG. For example, when a transmissive liquid crystal display device is used as a projector, light enters from above,
The light passes through the pixel opening where the Ti metal light shielding film 36a and the conductive light shielding film 12a are not formed.

By the way, in the transmission type liquid crystal display device according to the present embodiment, SiN which functions as a cap film for preventing outward diffusion when hydrogen is supplied from the PSG film 32 is used.
The upper surface of the _X film 34a has a Ti metal light shielding film 36a and Ti
It is completely covered with the light shielding electrode film 36b,
SiN _X film 34a to the pixel apertures of a light blocking section that the metal light-shielding film 36a and the conductive light shielding film 12a is formed is not flared. For this reason, as shown in FIG. 9, even when the incident light passes through the pixel opening near the light shielding portion, the SiN _x film 3
The incident light does not enter 4a, but passes through the planarizing insulating film 38 and the PSG film 32 made of a SiO ₂ film.

As described above, according to this embodiment, the PSG
From the film 32 to the silicon active region 1 of the pixel transistor 24
The upper surface of the SiN _x film 34a functioning as a cap film for preventing outward diffusion when supplying hydrogen to the Ti metal 6a is completely covered with the Ti metal light shielding film 36a.
The light incident on the transmissive liquid crystal display device passes through the pixel opening near the light-shielding portion because the SiN _x film 34a does not protrude from the light-shielding portion in which the conductive light-shielding film 12a is formed to the pixel opening. However, since the light does not enter the SiN _x film 34a, the high refractive index Si
Due to the large refraction of the light incident on the N _x film 34a, the refracted light is incident on the silicon active region 16a of the pixel transistor 24 to generate a light leak current, which causes a bright spot, crosstalk, etc. It is possible to prevent the deterioration of the image quality and the reduction of the light transmittance of the incident light passing through the pixel opening to reduce the luminance.

The SiN film formed on the PSG film 32
_{Since the X} film 34a does not protrude from the pattern of the Ti metal light shielding film 36a, the Al data line 30a
The margin for insulating and reinforcing the PSG 32 film that insulates between the SiN _X film 34a and the Ti metal light-shielding film 36a decreases, but the degree of the decrease is small.
The insulation reinforcing function of the G film 32 is still sufficiently exhibited.

(Second Embodiment) FIG. 10 shows a second embodiment of the present invention.
FIG. 11 is a cross-sectional view illustrating a pixel transistor portion of a transmission type liquid crystal display device according to the second embodiment. FIG. 11 is a cross-sectional view illustrating an additional capacitance portion of the transmission type liquid crystal display device according to the second embodiment of the present invention. is there. 12 to 17 correspond to FIG.
12A and 12B are cross-sectional views illustrating a method of manufacturing the transmissive liquid crystal display device shown in FIG. 11, wherein FIG. 11A shows a pixel transistor portion, and FIG. Things. FIG. 18 is an enlarged sectional view for explaining the operation when light is incident on the transmission type liquid crystal display device shown in FIG. Note that the same components as those of the liquid crystal display device in the first embodiment shown in FIGS. 1 to 8 are denoted by the same reference numerals and description thereof is omitted.

As shown in FIGS. 10 and 11, the transmission type liquid crystal display device according to this embodiment is substantially the same as the transmission type liquid crystal display device shown in FIGS. 1 and 2 of the first embodiment. Therefore, the common points will be described in a simplified manner.

In the transmission type liquid crystal display device according to the present embodiment, the conductive light shielding films 12a and 12b are formed on the transparent insulating substrate 10 of the pixel transistor portion and the additional capacitance portion, respectively.
Are formed in a continuous state, and the first insulating film 14 covers them.

On the first insulating film 14 above the conductive light-shielding film 12a in the pixel transistor portion, a gate line 22a is formed on the silicon active region 16a via a second insulating film 20 as a gate insulating film. The provided TFT-type pixel transistor 24 is formed.

The conductive light-shielding film 1 in the additional capacitance portion
On the first insulating film 14 above the second insulating film 2b, the first insulating film 14 as a dielectric film is sandwiched between the conductive light-shielding film 12b functioning as a lower electrode and the silicon electrode 16b functioning as an upper electrode. The first additional capacitance 18 is formed. The silicon electrode 16 functioning as a lower electrode
b in which a second insulating film 20 as a dielectric film is interposed between the first capacitor b and the additional capacitance line 22b functioning as an upper electrode.
Are formed.

Further, a third insulating film 28 is formed on the entire surface of the substrate including the pixel transistor 24 and the second additional capacitor 26, and is formed through a first contact hole opened in the third insulating film 28. Data line 30a connected to the silicon active region 16a on the source side of the pixel transistor 24
Are formed on the third insulating film 28. Further, an Al electrode 30b connected to the silicon electrode 16b of the second additional capacitor 26 via a second contact hole opened in the third insulating film 28 is formed on the third insulating film 28. I have.

The Al data line 30a and the Al electrode 30
The PSG film 32 is formed on the entire surface of the base including the layer b. Further, SiN is formed on the PSG film 32 above the pixel transistor 24, the gate line 22a, and the additional capacitance line 22b.
_{An X} film 34b is formed. Then, a Ti metal light-shielding film 36a constituting a black matrix is formed on the SiN _x film 34b covering the pixel transistors 24 and the gate lines 22a, and completely covers the upper surface and side surfaces of the SiN _x film 34b. I have.

The Al electrode 30 is also formed on the SiN _x film 34b above the additional capacitance line 22b via the third contact hole opened in the SiN _x film 34b and the PSG film 32.
b, a Ti light-shielding electrode film 36b connected to Sb is formed.
The top and side surfaces of the iN _x film 34b are completely covered.

As described above, the SiN _x film 34b formed on the PSG film 32 has its upper surface and side surfaces completely covered with the Ti metal light shielding film 36a and the Ti light shielding electrode film 36b. 36A and the light shielding portion on which the Ti light shielding electrode film 36b (and the conductive light shielding films 12a and 12b) are formed.
This embodiment is characterized in that the iN _x film 34b does not protrude.

A flattening insulating film 38 is formed on the entire substrate including the Ti metal light shielding film 36a and the Ti light shielding electrode film 36b, and a transparent ITO pixel electrode 40 is formed on the flattening insulating film 38. ing. The ITO pixel electrode 40 is connected to the Ti light-shielding electrode film 36b and the Al electrode 30b through a fourth contact hole opened in the flattening insulating film 38, and the first and second additional capacitors 18, 26
To the silicon electrode 16b.

Further, an opposing transparent substrate 44 on the surface of which a transparent opposing electrode layer 42 for obtaining an opposing electrode potential is sealed is opposed to the surface of the transparent insulating substrate 10 on which the pixel transistors 24 and the like are formed. Then, the transparent insulating substrate 10
The liquid crystal layer 4 is provided between the upper flattening insulating film 38 and the ITO pixel electrode 40 and the transparent counter electrode layer 42 of the counter transparent substrate 44.
6 are formed.

Next, a method of manufacturing the transmission type liquid crystal display device shown in FIGS. 10 and 11 will be described with reference to FIGS. First, as shown in FIGS. 12A and 12B,
In the same manner as the steps shown in FIGS. 3 and 4 of the first embodiment, the conductive light-shielding film 12a,
After forming 12b in a continuous state, the entire substrate surface is
The first insulating film 14 is formed.

Subsequently, a silicon active region 16a and a silicon electrode 16b connected to one end thereof are formed on the first insulating film 14 above the conductive light shielding films 12a and 12b, respectively. Thus, the conductive light shielding film 1 functioning as a lower electrode
A first additional capacitance 18 is formed in which a first insulating film 14 as a dielectric film is sandwiched between 2b and a silicon electrode 16b functioning as an upper electrode.

Subsequently, the silicon active region 16a and the first
After the second insulating film 20 is formed so as to respectively cover the silicon electrodes 16b of the additional capacitance 18, the gate line 22a of the pixel transistor crossing over the second insulating film 20 above the silicon active region 16a is formed. Then, an additional capacitance line 22b crossing over the second insulating film 20 above the silicon electrode 16b is formed.

As described above, the TFT pixel transistor 2 in which the gate line 22a is provided on the silicon active region 16a via the second insulating film 20 as the gate insulating film.
4 and a silicon electrode 16b functioning as a lower electrode and an additional capacitance line 22b functioning as an upper electrode
To form a second additional capacitance 26 in which a second insulating film 20 as a dielectric film is interposed.

Subsequently, a third insulating film 2 is formed on the entire surface of the base.
8 is deposited, the third insulating film 28 and the second insulating film 20 are selectively removed by etching to expose a surface of the silicon active region 16a which is a source region of the pixel transistor 24. And a second contact hole for exposing the surface of the silicon electrode 16b functioning as a lower electrode of the second additional capacitor 26 is formed.

Subsequently, an Al data line 30a is formed on the third insulating film 28, and the Al data line 30a is formed.
a is connected to the silicon active region 16a on the source side of the pixel transistor 24 via the first contact hole.
At the same time, an Al electrode 30b is formed on the third insulating film 28 so as to cover the upper part of the second additional capacitor 26 and not to contact the Al data line 30a.
Ob is connected to the silicon electrode 16b functioning as a lower electrode of the second additional capacitor 26 via the second contact hole.

Subsequently, after, for example, a PSG film 32 and a SiN _x film 34 are sequentially formed on the entire surface of the base from the bottom, heat treatment is performed under predetermined conditions to remove hydrogen contained in the PSG film 32. It is supplied to the silicon active region 16a of the pixel transistor 24. Thus, the traps at the polycrystalline boundaries in the silicon active region 16a are buried with hydrogen, and the carrier mobility in the silicon active region 16a is improved.

That is, at this time, the PSG film 32 functions as a hydrogen supply film for the silicon active region 16a of the pixel transistor 24, and the SiN _x film 34 allows hydrogen to be supplied from the PSG film 32 during supply of hydrogen. It functions as a cap film for preventing diffusion.

Next, as shown in FIGS. 13A and 13B, the SiN _x film 34 and the PSG film 32 are selectively removed by etching, so that the Al electrode 30b covering the upper part of the second additional capacitor 26 is removed. A third contact hole exposing the surface is formed. Further, the SiN _x film 34 is selectively etched and patterned by using a resist film (not shown) patterned in a shape smaller than a resist pattern used for selectively etching the Ti film in a later step as a mask. . Thus, the pixel transistor 2
4 and the SiN _x film 34b is left so as to cover above the gate line 22a and the additional capacitance line 22b.

Next, as shown in FIGS. 14A and 14B, a Ti film 36 is deposited on the entire surface of the base. Next, as shown in FIGS. 15A and 15B, the first
In this embodiment, the Ti film 36 is selectively etched using a resist film (not shown) patterned in the same shape as the resist pattern used for continuously etching the Ti film 36 and the SiN _x film 34. , Si
The _Nx film 34b is patterned into a shape that completely covers the top and side surfaces.

Thus, the Ti metal light-shielding film 36a constituting the black matrix is formed on the SiN _x film 34b to cover the pixel transistor 24, the gate line 22a and the additional capacitance line 22b. At the same time, the Ti light-shielding electrode film 36b connected to the Al electrode 30b covering the upper part of the second additional capacitor 26 through the third contact hole is changed to Si.
It is formed on the N _x film 34b. Thus, the SiN _x film 3
The present embodiment is characterized in that the upper surface and side surfaces of 4b are completely covered with the Ti metal light shielding film 36a and the Ti light shielding electrode film 36b.

Next, as shown in FIGS. 16A and 16B, a flattening insulating film 38 is formed over the entire surface of the substrate.
The flattening insulating film 38 is selectively removed by etching.
After forming a fourth contact hole exposing the surface of the Ti light shielding electrode film 36b, a transparent I
The TO pixel electrode 40 is formed, and the ITO pixel electrode 40 is connected to the Ti light-shielding electrode film 36b via the fourth contact hole. That is, the ITO pixel electrode 40 is
It is connected to the silicon electrode 16b via the light-shielding electrode film 36b and the Al electrode 30b.

Thus, on the transparent insulating substrate 10,
A pixel transistor 24, a gate line 22a connected to the pixel transistor 24, and an Al data line 30a are formed, and the first and second additional capacitances 18 and 26 and the first and second additional capacitances 18 and 26 are provided with Al electrodes. An ITO pixel electrode 40 connected via the electrode 30b or the like is formed.

Next, after dicing the transparent insulating substrate 10, a series of assembling operations are further performed. That is, FIG.
As shown in (a) and (b), the transparent counter electrode layer 42
Is formed on the transparent insulating substrate 1
The liquid crystal is applied between the ITO pixel electrode 40 and the transparent counter electrode layer 42 of the counter transparent substrate 44 and the flattened insulating film 38 on the transparent insulating substrate 10 and sealed. After the injection, sealing is performed, and the liquid crystal layer 4 is sealed.
6 is formed. As described above, the transmission type liquid crystal display device shown in FIGS. 10 and 12 is manufactured.

Next, the operation when light is incident on the transmission type liquid crystal display device shown in FIGS. 10 and 11 will be described with reference to FIG.
This will be described with reference to FIG. For example, when a transmissive liquid crystal display device is used as a projector, light enters from above and passes through the pixel opening where neither the Ti metal light-shielding film 36a nor the conductive light-shielding film 12a is formed.

In the transmission type liquid crystal display device according to the present embodiment, the PSG film 32 functions as a cap film for preventing outward diffusion when hydrogen is supplied from the PSG film 32 to the silicon active region 16a of the pixel transistor 24. The top and side surfaces of the SiN _x film 34b are completely covered with the Ti metal light shielding film 36a and the Ti light shielding electrode film 36b,
Ti metal light 36a and the conductive light shielding film 12a SiN on the pixel openings from the shielding portion is formed _X film 34b is not flared. Therefore, as shown in FIG. 18, even when the incident light passes through the pixel opening near the light shielding portion, the SiN
_The incident light does not enter the _X film 34b, but passes through the planarizing insulating film 38 and the PSG film 32 made of, for example, an SiO ₂ film.

As described above, according to this embodiment, the PSG
From the film 32 to the silicon active region 1 of the pixel transistor 24
The upper and side surfaces of the SiN _x film 34b functioning as a cap film for preventing outward diffusion when supplying hydrogen to the
Since the SiN _x film 34b is not completely extended from the light-shielding portion where the Ti metal light-shielding film 36a and the conductive light-shielding film 12a are formed to completely cover the pixel opening, the transmission type liquid crystal display device is completely covered by the metal light-shielding film 36a. Is incident on the pixel opening in the vicinity of the light shielding portion, the SiN _x film 34b
Is no longer incident on the silicon active region 16a of the pixel transistor 24, because the light incident on the SiN _x film 34b having a high refractive index is greatly refracted as in the prior art. A light leak current is generated, causing a luminescent spot, crosstalk, etc., to cause a deterioration in image quality, a decrease in light transmittance of incident light passing through the pixel opening, and a decrease in luminance. Can be prevented.

The SiN formed on the PSG film 32
_{Since the X} film 34b does not protrude from the pattern of the Ti metal light shielding film 36a, the Al data line 30a
The margin for insulating and reinforcing the PSG 32 film that insulates between the SiN _X film 34b and the Ti metal light-shielding film 36a decreases, but the degree of the decrease is small.
The insulation reinforcing function of the G film 32 is still sufficiently exhibited.

(Third Embodiment) FIG. 19 shows a third embodiment of the present invention.
FIG. 20 is a cross-sectional view illustrating a pixel transistor portion of a transmission-type liquid crystal display device according to the third embodiment. FIG. 20 is a cross-sectional view illustrating an additional capacitance portion of the transmission-type liquid crystal display device according to the third embodiment of the present invention. is there. FIGS. 21 to 25 correspond to FIGS.
21A and 21B are process cross-sectional views for explaining a method of manufacturing the transmissive liquid crystal display device shown in FIG. 20, wherein (a) of each drawing shows a pixel transistor portion and (b) shows an additional capacitance portion. Things. FIG. 26 is an enlarged sectional view for explaining the operation when light is incident on the transmission type liquid crystal display device shown in FIG. The same components as those of the liquid crystal display device in the first embodiment shown in FIGS.

As shown in FIGS. 19 and 20, the transmission type liquid crystal display device according to the present embodiment is substantially the same as the transmission type liquid crystal display device shown in FIGS. 1 and 2 of the first embodiment. Therefore, the common points will be described in a simplified manner.

In the transmission type liquid crystal display device according to this embodiment, the conductive light shielding films 12a and 12b are formed on the transparent insulating substrate 10 of the pixel transistor portion and the additional capacitance portion, respectively.
Are formed in a continuous state, and the first insulating film 14 covers them.

On the first insulating film 14 above the conductive light shielding film 12a in the pixel transistor portion, a gate line 22a is formed on the silicon active region 16a via a second insulating film 20 as a gate insulating film. The provided TFT-type pixel transistor 24 is formed.

The conductive light-shielding film 1 in the additional capacitance portion
On the first insulating film 14 above the second insulating film 2b, the first insulating film 14 as a dielectric film is sandwiched between the conductive light-shielding film 12b functioning as a lower electrode and the silicon electrode 16b functioning as an upper electrode. The first additional capacitance 18 is formed. The silicon electrode 16 functioning as a lower electrode
b in which a second insulating film 20 as a dielectric film is interposed between the first capacitor b and the additional capacitance line 22b functioning as an upper electrode.
Are formed.

A third insulating film 28 is formed on the entire surface of the substrate including the pixel transistor 24 and the second additional capacitor 26, and is formed through a first contact hole opened in the third insulating film 28. Data line 30a connected to the silicon active region 16a on the source side of the pixel transistor 24
Are formed on the third insulating film 28. Further, an Al electrode 30b connected to the silicon electrode 16b of the second additional capacitor 26 via a second contact hole opened in the third insulating film 28 is formed on the third insulating film 28. I have.

The Al data line 30a and the Al electrode 30
b in the first embodiment.
A PSG film 32a thicker than the SG film 32 is formed. The pixel transistor 24 and the gate line 22
On the PSG film 32a above “a”, a Ti metal light shielding film 36a that directly forms a black matrix is formed. Further, a Ti light-shielding electrode film 36b connected to the Al electrode 30b via a third contact hole opened in the PSG film 32a is directly formed on the PSG film 32a above the additional capacitance line 22b. .

As described above, the SiN _x is provided between the PSG film 32a and the Ti metal light shielding film 36a and the Ti light shielding electrode film 36b.
This embodiment is characterized in that the film is not interposed and the Ti metal light shielding film 36a and the Ti light shielding electrode film 36b are formed directly on the PSG film 32a.

A flattening insulating film 38 is formed on the entire substrate including the Ti metal light shielding film 36a and the Ti light shielding electrode film 36b, and a transparent ITO pixel electrode 40 is formed on the flattening insulating film 38. ing. The ITO pixel electrode 40 is connected to the Ti light-shielding electrode film 36b and the Al electrode 30b through a fourth contact hole opened in the flattening insulating film 38, and the first and second additional capacitors 18, 26
To the silicon electrode 16b.

Further, a counter transparent substrate 44 having a transparent counter electrode layer 42 for obtaining a counter electrode potential formed on the surface thereof is sealed opposite to the surface of the transparent insulating substrate 10 on which the pixel transistors 24 and the like are formed. Then, the transparent insulating substrate 10
The liquid crystal layer 4 is provided between the upper flattening insulating film 38 and the ITO pixel electrode 40 and the transparent counter electrode layer 42 of the counter transparent substrate 44.
6 are formed.

Next, a method of manufacturing the transmission type liquid crystal display device shown in FIGS. 19 and 20 will be described with reference to FIGS. First, as shown in FIGS. 21 (a) and (b),
In the same manner as the steps shown in FIGS. 3 and 4 of the first embodiment, the conductive light-shielding film 12a,
After forming 12b in a continuous state, the entire substrate surface is
The first insulating film 14 is formed.

Subsequently, a silicon active region 16a and a silicon electrode 16b connected to one end thereof are formed on the first insulating film 14 above the conductive light shielding films 12a and 12b, respectively. Thus, the conductive light shielding film 1 functioning as a lower electrode
A first additional capacitance 18 is formed in which a first insulating film 14 as a dielectric film is sandwiched between 2b and a silicon electrode 16b functioning as an upper electrode.

Subsequently, the silicon active region 16a and the first
After the second insulating film 20 is formed so as to respectively cover the silicon electrodes 16b of the additional capacitance 18, the gate line 22a of the pixel transistor crossing over the second insulating film 20 above the silicon active region 16a is formed. Then, an additional capacitance line 22b crossing over the second insulating film 20 above the silicon electrode 16b is formed.

In this manner, the TFT pixel transistor 2 having the gate line 22a provided on the silicon active region 16a via the second insulating film 20 as a gate insulating film.
4 and a silicon electrode 16b functioning as a lower electrode and an additional capacitance line 22b functioning as an upper electrode
To form a second additional capacitance 26 in which a second insulating film 20 as a dielectric film is interposed.

Subsequently, a third insulating film 2 is formed on the entire surface of the base.
8 is deposited, the third insulating film 28 and the second insulating film 20 are selectively removed by etching to expose a surface of the silicon active region 16a which is a source region of the pixel transistor 24. And a second contact hole for exposing the surface of the silicon electrode 16b functioning as a lower electrode of the second additional capacitor 26 is formed.

Subsequently, an Al data line 30a is formed on the third insulating film 28 and the Al data line 30a is formed.
a is connected to the silicon active region 16a on the source side of the pixel transistor 24 via the first contact hole.
At the same time, an Al electrode 30b is formed on the third insulating film 28 so as to cover the upper part of the second additional capacitor 26 and not to contact the Al data line 30a.
Ob is connected to the silicon electrode 16b functioning as a lower electrode of the second additional capacitor 26 via the second contact hole.

Subsequently, for example, the first
Thicker than the PSG film 32 in the first embodiment.
After laminating the G film 32a and the SiN _x film 34 in order from the bottom, heat treatment is performed under predetermined conditions to supply hydrogen contained in the PSG film 32a to the silicon active region 16a of the pixel transistor 24. Thus, the traps at the polycrystalline boundaries in the silicon active region 16a are buried with hydrogen, and the carrier mobility in the silicon active region 16a is improved.

That is, at this time, the PSG film 32a functions as a hydrogen supply film for the silicon active region 16a of the pixel transistor 24, and the SiN _x film 34 allows hydrogen to be supplied from the PSG film 32a during supply of hydrogen. It functions as a cap film for preventing diffusion.

Next, as shown in FIGS. 22A and 22B, the entire surface of the SiN _x film 34 is removed by etching to expose the surface of the PSG film 32a.
a is selectively removed by etching to obtain a second additional capacitor 26.
A third contact hole for exposing the surface of the Al electrode 30b covering the upper side is formed.

Next, as shown in FIGS. 23A and 23B, after a Ti film 36 is deposited on the entire surface of the substrate, the Ti film 36 and the SiN _x film 3 are formed in the first embodiment.
The Ti film 36 is selectively etched using a resist film (not shown) patterned in the same shape as the resist pattern used when continuously etching No. 4 as a mask.

Thus, the Ti metal light-shielding film 36a constituting the black matrix is formed directly on the PSG film 32a, and covers the pixel transistor 24, the gate line 22a and the additional capacitance line 22b. At the same time, the Ti light-shielding electrode film 36b connected to the Al electrode 30b covering the upper part of the second additional capacitor 26 through the third contact hole is changed to P-type.
It is formed directly on the SG film 32a.

As described above, when supplying hydrogen from the PSG film 32a, the SiN _x film 34 functioning as a cap film for preventing outward diffusion is completely removed, and the Ti metal light-shielding is directly formed on the PSG film 32a. Film 36a and Ti light shielding electrode film 36b
The feature of the present embodiment lies in that

Next, as shown in FIGS. 24A and 24B, a flattening insulating film 38 is formed on the entire surface of the substrate.
The flattening insulating film 38 is selectively removed by etching.
After forming a fourth contact hole exposing the surface of the Ti light shielding electrode film 36b, a transparent I
The TO pixel electrode 40 is formed, and the ITO pixel electrode 40 is connected to the Ti light-shielding electrode film 36b via the fourth contact hole. That is, the ITO pixel electrode 40 is
It is connected to the silicon electrode 16b via the light-shielding electrode film 36b and the Al electrode 30b.

Thus, on the transparent insulating substrate 10,
A pixel transistor 24, a gate line 22a connected to the pixel transistor 24, and an Al data line 30a are formed, and the first and second additional capacitances 18 and 26 and the first and second additional capacitances 18 and 26 are provided with Al electrodes. An ITO pixel electrode 40 connected via the electrode 30b or the like is formed.

Next, after the transparent insulating substrate 10 is diced, a series of assembling operations are further performed. That is, FIG.
As shown in (a) and (b), the transparent counter electrode layer 42
Is formed on the transparent insulating substrate 1
The liquid crystal is applied between the ITO pixel electrode 40 and the transparent counter electrode layer 42 of the counter transparent substrate 44 and the flattened insulating film 38 on the transparent insulating substrate 10 and sealed. After the injection, sealing is performed, and the liquid crystal layer 4 is sealed.
6 is formed. As described above, the transmission type liquid crystal display device shown in FIGS. 19 and 21 is manufactured.

Next, the operation when light is incident on the transmission type liquid crystal display device shown in FIGS. 19 and 20 will be described with reference to FIG.
This will be described with reference to FIG. For example, when a transmissive liquid crystal display device is used as a projector, light enters from above and passes through the pixel opening where neither the Ti metal light-shielding film 36a nor the conductive light-shielding film 12a is formed.

In the transmissive liquid crystal display device according to the present embodiment, the PSG film 32 functions as a cap film for preventing outward diffusion when hydrogen is supplied from the PSG film 32 to the silicon active region 16a of the pixel transistor 24. The SiN _x film 34b is thereafter completely removed, and the PSG film 32a and T
It is not interposed between the i metal light shielding film 36a and the Ti light shielding electrode film 36b. For this reason, as shown in FIG. 26, when the incident light passes through the pixel opening near the light-shielding portion, it does not naturally enter the SiN _x film.
_The light passes through the planarizing insulating film 38 and the PSG film 32 made of _two films.

As described above, according to the present embodiment, the PSG
The SiN _x film 34 functioning as a cap film for preventing out-diffusion at the time of supplying hydrogen to the silicon active region 16a of the pixel transistor 24 from the film 32a is thereafter completely removed, and the Ti metal light shielding film 36a and the conductive The light-shielding film 12a is PS
Since the light is directly formed on the G film 32a, the light enters the transmissive liquid crystal display device, and even if the incident light passes through the pixel opening near the light-shielding portion, it does not exist.
Since the light does not enter the N _x film, the light incident on the SiN _x film having a high refractive index as in the conventional art is largely refracted, and the refracted light enters the silicon active region 16a of the pixel transistor 24. This causes a light leak current, which causes bright spots, crosstalk, etc., to cause a deterioration in image quality, and a decrease in light transmittance of incident light passing through the pixel opening, resulting in a decrease in luminance. This can be prevented from occurring.

Note that the Si formed on the PSG film 32a
The P which insulates between the Al data line 30a and the Ti metal light-shielding film 36a by the amount by which the N _x film 34b is completely removed.
Since the margin for insulating and reinforcing the SG film 32a decreases,
It is necessary to enhance the insulating function of the PSG film 32a. However, in the present embodiment, the PSG film 32a is made thicker than in the past to enhance its insulation function. However, not only such thickening but also the conditions for forming the PSG film 32, for example, are required. Alternatively, the insulating function may be enhanced by improving the film quality as compared with the related art.

[0128]

As described above, according to the liquid crystal display device and the method of manufacturing the same according to the present invention, the following effects can be obtained. That is, according to the liquid crystal display device of the first aspect, since the light-shielding film is formed to completely cover the upper surface of the nitride film, the pixel through which the incident light is transmitted from the light-shielding portion where the light-shielding film is formed Since the nitride film is prevented from protruding into the opening, it is possible to prevent the incident light from being incident on the nitride film even when transmitting the light through the pixel opening near the light shielding portion. Therefore, due to the refraction of the light incident on the nitride film having a high refractive index, the refracted light incident on the semiconductor active region of the thin film transistor generates a light leakage current or the light of the incident light passing through the pixel opening. It is possible to prevent the transmittance from lowering, and to improve the image quality and the luminance of the liquid crystal display device.

According to the liquid crystal display device of the second aspect, the light shielding film is formed so as to completely cover not only the upper surface but also the side surface of the nitride film. Since the nitride film is prevented from projecting into the pixel opening through which the incident light is transmitted from the portion, the incident light does not enter the nitride film even when passing through the pixel opening near the light shielding portion. The same effect as in the case of the liquid crystal display device according to claim 1 can be obtained.

Further, according to the liquid crystal display device of the third aspect, since the light shielding film is formed directly on the insulating film (excluding the nitride film), the incident light transmitted through the conventional pixel opening can be prevented. Since there is no nitride film having a high refractive index that caused refraction, incident light does not enter the nitride film even when passing through the pixel opening near the light shielding portion. The same effect as in the case of the liquid crystal display device can be obtained.

According to the method of manufacturing a liquid crystal display device according to the fourth aspect, a thin film transistor is formed on a transparent insulating substrate, and an insulating film containing hydrogen and a nitride film are sequentially laminated to form a predetermined heat treatment. After that, the light-shielding film and the nitride film formed on the entire surface of the substrate are patterned into the same shape, and the light-shielding film and the nitride film covering the upper part of the thin film transistor are left, so that the upper surface of the nitride film is completely covered by the light-shielding film. To prevent the nitride film from projecting from the light-shielding portion where the light-shielding film is formed to the pixel opening through which the incident light is transmitted, so that the incident light transmits through the pixel opening near the light-shielding portion. In this case, it is possible to prevent the light from entering the nitride film. Therefore, due to the refraction of the light incident on the nitride film having a high refractive index, the refracted light incident on the semiconductor active region of the thin film transistor generates a light leakage current or the light of the incident light passing through the pixel opening. It is possible to prevent the transmittance from lowering, and to improve the image quality and the luminance of the liquid crystal display device.

According to the method of manufacturing a liquid crystal display device of the present invention, a thin film transistor is formed on a transparent insulating substrate, and an insulating film containing hydrogen and a nitride film are sequentially laminated to form a predetermined heat treatment. After that, the nitride film is patterned into a predetermined shape to leave a nitride film covering the upper part of the thin film transistor, and a light shielding film completely covering the upper surface and side surfaces of the nitride film is formed. In addition, since the side surface is completely covered with the light-shielding film and the nitride film is prevented from protruding from the light-shielding portion where the light-shielding film is formed to the pixel opening through which the incident light is transmitted, the incident light is close to the light-shielding portion Also, the light does not enter the nitride film when transmitting through the pixel opening, and the same effect as in the method of manufacturing the liquid crystal display device according to the fourth aspect can be obtained.

According to the method of manufacturing a liquid crystal display device of the present invention, a thin film transistor is formed on a transparent insulating substrate, and an insulating film containing hydrogen and a nitride film are sequentially formed to form a predetermined heat treatment. Is performed, the nitride film is removed, and a light-shielding film is formed on the insulating film above the thin film transistor, whereby the nitride film is removed and the light-shielding film is formed directly on the insulating film. Since the nitride film itself that caused incident light transmitted through the pixel opening to be refracted no longer exists, the incident light does not enter the nitride film even when transmitted through the pixel opening near the light-shielding portion, The same effects as in the case of the method for manufacturing a liquid crystal display device according to claim 4 can be obtained.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a pixel transistor section of a transmission type liquid crystal display device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing an additional capacitance section of the transmission type liquid crystal display device according to the first embodiment of the present invention.

FIGS. 3A and 3B are cross-sectional views (part 1) illustrating a method of manufacturing the transmissive liquid crystal display device shown in FIGS. 1 and 2, wherein FIG. Indicates an additional capacitance section.

4A and 4B are cross-sectional views (part 2) illustrating a method of manufacturing the transmissive liquid crystal display device shown in FIGS. 1 and 2; FIG. 4A shows a pixel transistor portion; Indicates an additional capacitance section.

5A and 5B are cross-sectional views (part 3) illustrating a method of manufacturing the transmissive liquid crystal display device shown in FIGS. 1 and 2; FIG. 5A shows a pixel transistor portion; Indicates an additional capacitance section.

6A and 6B are cross-sectional views (part 4) illustrating a method of manufacturing the transmissive liquid crystal display device shown in FIGS. 1 and 2; FIG. 6A illustrates a pixel transistor portion; Indicates an additional capacitance section.

FIGS. 7A and 7B are process cross-sectional views (No. 5) for explaining the method of manufacturing the transmissive liquid crystal display device shown in FIGS. 1 and 2; FIG. 7A shows a pixel transistor portion; Indicates an additional capacitance section.

8A and 8B are cross-sectional views (part 6) illustrating a method of manufacturing the transmissive liquid crystal display device shown in FIGS. 1 and 2, wherein FIG. 8A shows a pixel transistor portion, and FIG. Indicates an additional capacitance section.

FIG. 9 is an enlarged cross-sectional view for explaining an operation when light is incident on the transmission type liquid crystal display device shown in FIG.

FIG. 10 is a sectional view showing a pixel transistor portion of a transmission type liquid crystal display device according to a second embodiment of the present invention.

FIG. 11 is a cross-sectional view showing an additional capacitance section of a transmission type liquid crystal display device according to a second embodiment of the present invention.

12A and 12B are cross-sectional views (part 1) illustrating a method of manufacturing the transmissive liquid crystal display device shown in FIGS. 10 and 11, wherein FIG. 12A shows a pixel transistor portion and FIG.
Indicates an additional capacitance section.

13A and 13B are cross-sectional views (part 2) illustrating a method of manufacturing the transmissive liquid crystal display device illustrated in FIGS. 10 and 11, wherein FIG. 13A illustrates a pixel transistor portion, and FIG.
Indicates an additional capacitance section.

14A and 14B are cross-sectional views (part 3) illustrating a method of manufacturing the transmissive liquid crystal display device shown in FIGS. 10 and 11, wherein FIG. 14A illustrates a pixel transistor portion and FIG.
Indicates an additional capacitance section.

15A and 15B are cross-sectional views (part 4) illustrating a method of manufacturing the transmissive liquid crystal display device shown in FIGS. 10 and 11, wherein FIG. 15A shows a pixel transistor portion and FIG.
Indicates an additional capacitance section.

16A and 16B are cross-sectional views (part 5) illustrating a method for manufacturing the transmissive liquid crystal display device shown in FIGS. 10 and 11, wherein FIG. 16A shows a pixel transistor portion and FIG.
Indicates an additional capacitance section.

FIG. 17 is a process sectional view (part 6) for explaining the method for manufacturing the transmissive liquid crystal display device shown in FIGS. 10 and 11, wherein (a) shows a pixel transistor portion, and (b)
Indicates an additional capacitance section.

18 is an enlarged cross-sectional view for explaining an operation when light is incident on the transmission type liquid crystal display device shown in FIG.

FIG. 19 is a cross-sectional view illustrating a pixel transistor portion of a transmissive liquid crystal display device according to a third embodiment of the present invention.

FIG. 20 is a cross-sectional view illustrating an additional capacitance section of a transmission type liquid crystal display device according to a third embodiment of the present invention.

21A and 21B are cross-sectional views (part 1) illustrating a method of manufacturing the transmissive liquid crystal display device shown in FIGS. 19 and 20, wherein FIG. 21A illustrates a pixel transistor portion, and FIG.
Indicates an additional capacitance section.

FIGS. 22A and 22B are cross-sectional views (part 2) illustrating a method of manufacturing the transmissive liquid crystal display device shown in FIGS. 19 and 20, wherein FIG.
Indicates an additional capacitance section.

FIG. 23 is a process sectional view (part 3) for describing the method for manufacturing the transmissive liquid crystal display device shown in FIGS. 19 and 20, wherein (a) shows a pixel transistor portion and (b)
Indicates an additional capacitance section.

24 is a process sectional view (part 4) for explaining the method of manufacturing the transmission type liquid crystal display device shown in FIGS. 19 and 20, wherein (a) shows a pixel transistor portion, and (b)
Indicates an additional capacitance section.

FIG. 25 is a process sectional view (part 5) for explaining the method for manufacturing the transmission-type liquid crystal display device shown in FIGS. 19 and 20, wherein (a) shows a pixel transistor portion and (b)
Indicates an additional capacitance section.

26 is an enlarged cross-sectional view for explaining an operation when light is incident on the transmission type liquid crystal display device shown in FIG.

27A and 27B are cross-sectional views (part 1) illustrating a method for manufacturing a conventional transmissive liquid crystal display device, in which FIG. 27A illustrates a pixel transistor portion, and FIG. It shows.

FIGS. 28A and 28B are cross-sectional views (part 2) illustrating a method of manufacturing a conventional transmissive liquid crystal display device, in which FIG. 28A illustrates a pixel transistor portion, and FIG. It shows.

29 is a process sectional view (part 3) for explaining a method of manufacturing a conventional transmissive liquid crystal display device. FIG. 29 (a) shows a pixel transistor portion, and FIG. 29 (b) shows an additional capacitance portion. It shows.

30A and 30B are cross-sectional views (part 4) illustrating a method of manufacturing a conventional transmissive liquid crystal display device, in which (a) illustrates a pixel transistor portion and (b) illustrates an additional capacitance portion. It shows.

FIG. 31 is a layout diagram of a conventional transmission type liquid crystal display device, showing a portion below a data line.

FIG. 32 is a layout diagram of a conventional transmissive liquid crystal display device, showing a portion above a gate line and an additional capacitance line.

FIG. 33 is an enlarged cross-sectional view for explaining an operation when light enters a conventional transmission type liquid crystal display device.

[Explanation of symbols]

10 transparent insulating substrate, 12a, 12b conductive light-shielding film, 14 first insulating film, 16a silicon active region, 16b silicon electrode, 18 first additional capacitance, 20 ... Second insulating film, 22a ... Gate line, 22
b: additional capacitance line, 24: pixel transistor, 26 ...
... Second additional capacitance, 28... Third insulating film, 30a.
Al data line, 30b ... Al electrode, 32, 32a ...
PSG films, 34, 34a, 34b... SiN _x films, 36
... Ti film, 36a ... Ti metal light shielding film, 36b ... T
i: light-shielding electrode film, 38: flattening insulating film, 40: ITO
Pixel electrode, transparent counter electrode layer, counter transparent substrate, liquid crystal layer, transparent insulating substrate, 62
... conductive light-shielding film, 64 ... first insulating film, 66a ... silicon active region, 66b ... silicon lower electrode, 68 ...
... Second insulating film, 70a gate line, 70b additional capacitance line, 72 pixel transistor, 74 additional capacitance, 76 third insulating film, 78a Al data line,
78b: Al electrode, 80: PSG film, 82, 82a
... SiN _x film, 84a ... Ti metal light shielding film, 84b ...
... Ti light-shielding electrode film, 86 ... Planarization insulating film, 88 ... I
TO pixel electrode, 90: transparent opposing electrode layer, 92: opposing transparent substrate, 94: liquid crystal layer

Claims (6)

[Claims] A transparent insulating substrate, a thin film transistor formed on the transparent insulating substrate, a gate electrode provided on a semiconductor active region via a gate insulating film, and a substrate including the thin film transistor. An insulating film, a nitride film formed on the insulating film and covering the upper part of the thin film transistor, a light shielding film formed to completely cover an upper surface of the nitride film, and the light shielding film A flattening insulating film covering the entire surface of the base, a pixel electrode formed on the flattening insulating film, a counter substrate facing the transparent insulating substrate, and being formed on the counter substrate A liquid crystal comprising: a counter electrode; and a liquid crystal layer sandwiched between the pixel electrode and the counter electrode on the counter substrate, the flattening insulating film on the transparent insulating substrate, and the pixel electrode. Display devices. 2. The liquid crystal display device according to claim 1, wherein the light shielding film is formed so as to cover a side surface of the nitride film. 3. A transparent insulating substrate; a thin film transistor formed on the transparent insulating substrate, wherein a gate electrode is provided on a semiconductor active region via a gate insulating film; An insulating film (excluding the nitride film), a light shielding film formed directly on the insulating film (excluding the nitride film), and covering the upper part of the thin film transistor, and covering an entire surface of the base including the light shielding film. A planarizing insulating film, a pixel electrode formed on the planarizing insulating film, a counter substrate facing the transparent insulating substrate, a counter electrode formed on the counter substrate, A liquid crystal display device, comprising: a liquid crystal layer sandwiched between the pixel electrode and the counter electrode on the counter substrate; 4. A first step of forming a thin film transistor in which a gate electrode is provided on a transparent insulating substrate via a gate insulating film on a semiconductor active region, and an insulating film containing hydrogen on an entire surface of the base; A second step of performing a predetermined heat treatment after laminating and forming a nitride film in order; forming a light-shielding film on the entire surface of the substrate; patterning the light-shielding film and the nitride film into the same shape; A third step of leaving the light-shielding film and the nitride film covering the upper part of the thin film transistor; and forming a flattening insulating film on the entire surface of the substrate, and forming a pixel electrode on the flattening insulating film. A fifth step of forming a counter electrode on the counter substrate; and causing the transparent insulating substrate and the counter substrate to face each other, and forming the flattening insulating film and the pixel electrode on the transparent insulating substrate, Front on counter substrate Method of manufacturing a liquid crystal display device characterized by having a sixth step of sealing liquid crystal is injected between the counter electrode. 5. A first step of forming a thin film transistor having a gate electrode provided on a semiconductor active region on a transparent insulating substrate with a gate insulating film interposed therebetween, and an insulating film containing hydrogen, A second step of performing a predetermined heat treatment after sequentially forming a nitride film, and patterning the nitride film into a predetermined shape to leave the nitride film covering the upper part of the thin film transistor; A third step of forming a light-shielding film that completely covers the upper surface and side surfaces of the nitride film; and a step of forming a pixel electrode on the planarized insulating film after forming a planarized insulating film on the entire substrate. A step of forming a counter electrode on the counter substrate; and a step of making the transparent insulating substrate and the counter substrate face each other, and forming the flattening insulating film and the pixel electrode on the transparent insulating substrate. Front on the counter substrate Method of manufacturing a liquid crystal display device characterized by having a sixth step of sealing liquid crystal is injected between the counter electrode. 6. A first step of forming a thin film transistor in which a gate electrode is provided on a transparent insulating substrate via a gate insulating film on a semiconductor active region, and an insulating film containing hydrogen, A second step of forming a nitride film in order and then performing a predetermined heat treatment; and a third step of forming a light-shielding film covering the upper part of the thin film transistor on the insulating film after removing the nitride film. A fourth step of forming a pixel electrode on the flattening insulating film after forming a flattening insulating film on the entire surface of the base; and a fifth step of forming a counter electrode on the counter substrate. Liquid crystal is injected and sealed between the transparent insulating substrate and the opposing substrate, the planarizing insulating film on the transparent insulating substrate, and the pixel electrode and the opposing electrode on the opposing substrate. A sixth step of: A method for manufacturing a liquid crystal display device characterized by the above-mentioned.