JP2000193996A - Electrooptic device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To widen the angle of the visibility of the electrooptic device such as a reflection type liquid crystal device having a pixel electrode formed of a reflecting film by using relatively simple constitution. SOLUTION: A liquid crystal is sandwiched between a couple of substrates. On one of the substrates, pixel electrodes 13 are provided which consist of wires such as a data line and a scanning line for supplying electric power driving the liquid crystal and a reflecting film. Further, a 2nd conductive layer 10 having a number of holes 10a and a hole filling insulating layer 11c which fills the holes 10a, is processed by CMP(Chemical Mechanical Polishing) together with the 2nd conductive layer prescribing the circumferences of the holes 10a and has its CMP-processed surface recessed below the surface of the 2nd conductive layer are provided between the pixel electrode 13 and one of the substrates.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to the technical field of an electro-optical device such as a reflective liquid crystal device in which a pixel electrode is formed of a reflective film, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Generally, in a reflection type electro-optical device of this type, an electro-optical material such as a liquid crystal is sandwiched between a pair of substrates. A pixel electrode made of a reflective film such as an (aluminum) film is provided for each pixel or for each segment. Then, external light incident from the counter substrate side, which is the other substrate, via the electro-optical material is reflected by the pixel electrode, and again from the counter substrate side via the electro-optical material according to the voltage application state by the pixel electrode. It is configured to emit light for each pixel.

As an element substrate, an opaque semiconductor substrate made of silicon single crystal or the like or a transparent substrate made of quartz or glass is used. A scanning line for selectively applying an electric field to the electro-optical material for each pixel by the pixel electrode on the substrate below the pixel electrode and around the image display area,
Various wirings such as data lines, capacitance lines, power supply lines, etc., for pixel switching of field effect transistors (hereinafter appropriately referred to as FETs), thin film transistors (hereinafter appropriately referred to as TFTs), thin film diodes (hereinafter appropriately referred to as TFDs), etc. , A driving circuit for driving a scanning line or a data line, a memory circuit for storing data to be written to each pixel, and the like. Therefore, various driving methods such as a passive matrix driving method, an active matrix driving method, a segment driving method, and a static driving method can be adopted for reflection-type electro-optical devices of various sizes.

In general, a reflective electro-optical device is more advantageous than a transmissive electro-optical device in that it does not require a backlight and can be made smaller and thinner and consume less power. In particular, in the case of a reflection-type electro-optical device in which the pixel electrode is formed of a reflective film as described above, wiring and various circuit elements are provided by utilizing an area on the substrate hidden under the opaque pixel electrode in the image display area. This is advantageous in comparison with a traditional reflection-type electro-optical device in which a reflection plate is mounted on a side of an element substrate opposite to a counter substrate. In addition, since the substrate hidden under the pixel electrode in the image display area does not need to be transparent, it is possible to use an opaque semiconductor substrate. Particularly, in the case of a small electro-optical device, various circuit elements can be formed. It is also possible to use a semiconductor substrate suitable for the device as it is as an element substrate.

[0005]

In this type of electro-optical device, there is a strong demand for high-quality display images, and it is particularly important to increase the viewing angle.

[0006] However, in the above-described pixel electrode made of a reflective film, the surface of the pixel electrode formed by using various thin film forming techniques is flat. Therefore, the pixel electrode basically only reflects external light incident from the counter substrate side via the electro-optical material, and thus the intensity of light scattered toward the display screen at the pixel electrode is extremely low. Therefore, there is a problem that the viewing angle is essentially narrow.

Therefore, the applicant of the present application has proposed a method of forming a SiO ₂ layer as shown in FIG.
TiN (titanium nitride) / Al (aluminum) / TiN (titanium nitride) / Ti (titanium) film having many small holes 502a having a diameter of about 0.5 to 10 μm formed on an interlayer insulating film 501 such as a film. A conductive layer 502 such as
A technique for forming a pixel electrode over the interlayer insulating film 503 such as a SiO ₂ film to make the surface of the pixel electrode uneven is invented. However, in the case of this technique, a steeply sloped portion corresponding to the edge of each hole 502a is obtained only locally or extremely scattered on the surface of the pixel electrode, and particularly, the center of each hole 502a is obtained. The pixel electrode surface corresponding to the vicinity (that is, the portion where the upper surface of the interlayer insulating film 501 is exposed in each hole 502a) becomes flat.
Therefore, it is difficult to form a gently widened inclined region suitable for widening the viewing angle on the surface of the pixel electrode corresponding to each hole 502a. Therefore, the applicant of the present application
As shown in FIG. 15, in the laminated structure of FIG. 14, a SOG (Spin On Glass) film 504 is further added.
Is provided in a recess corresponding to each hole 502a in the interlayer insulating film 503, and an interlayer insulating film 5 such as a SiO ₂ film is provided thereabove.
A technique of forming a gentle slope region by forming a pixel electrode through the pixel electrode 05 has been invented. However, in the case of this technique, a step of forming the SOG film 504 and a step of stacking a plurality of interlayer insulating films are additionally required, so that the manufacturing process becomes complicated and the cost increases. in addition,
It is still difficult to form a gently widened inclined region corresponding to each hole 502a on the pixel electrode surface.

As described above, according to the invention of the applicant of the present invention, the external light incident on the surface of the pixel electrode made uneven corresponding to each hole 502a is slightly diffused, so that the viewing angle is slightly widened. There is a problem that a sufficient viewing angle cannot be obtained.

The present invention has been made in view of the above-described problems, and provides a reflection-type electro-optical device capable of obtaining a sufficient viewing angle using a relatively simple structure, and a method of manufacturing the same. That is the task.

[0010]

In order to solve the above-mentioned problems, an electro-optical device according to the present invention comprises an electro-optical material sandwiched between a pair of substrates, and one of the pair of substrates has
A pixel electrode formed of a wiring and a reflective film for supplying an electric force for driving the electro-optical material, and interposed between the pixel electrode and the one substrate, a large number of irregularities are formed on the surface; CM along with an uneven layer and a convex portion of the uneven layer that fills a concave portion of the concave-convex layer and defines a periphery of the concave portion.
A CMP layer that has been subjected to P (Chemical Mechanical Polishing) processing and the surface of which has been subjected to the CMP processing is more concave than the convex portion.

[0011] According to the electro-optical device of the present invention, a large number of irregularities are formed on the surface of the irregular layer.
The concave portions of the uneven layer are filled. In particular, the protrusion of the uneven layer defining the periphery of the recess and the CMP layer are
The CMP has been performed and the CMP has been performed.
The surface of the layer is more concave than the convex part. Such a structure in which the concave portion is filled with the CMP layer that is more concave than the convex portion is obtained by setting the CMP layer more easily to be chemically polished in the CMP process than the concave and convex layer. However, this C
In the course of the MP process, after the chemical polishing is performed to the level of the tip of the convex portion of the concave-convex layer, the polishing cloth or the like performing the CMP process is less likely to hit the CMP layer located in the concave portion as the edge of the concave portion is closer. This makes the CMP layer relatively difficult to be chemically polished. On the other hand, the closer the polishing cloth or the like subjected to the CMP process is to the center of the concave portion, the more easily it hits the CMP layer located in the concave portion, and the more easily the CMP layer is chemically polished. As a result, in the structure of the present invention in which the recesses are filled with the CMP layer that is more recessed than the protrusions, the surface of the CMP layer in each recess has a surface shape that is gradually inclined from the edge toward the center. Therefore, the pixel electrode made of a reflective film formed above the CMP layer buried in each concave portion with an interlayer insulating film or the like interposed therebetween,
It has a surface shape that is gently inclined according to the surface shape of the layer. For this reason, the pixel electrode scatters external light incident from the counter substrate side via the electro-optical material toward the display screen, so that the intensity of the scattered light is significantly increased as compared with a flat pixel electrode.

In one aspect of the electro-optical device according to the present invention, the uneven layer is formed of a single layer having a large number of holes.

According to this aspect, since the uneven layer is formed of one layer having a large number of holes formed therein, the holes are formed as concave portions, and the non-opened surfaces are formed as convex portions. Therefore, the pixel electrode formed above the CMP layer filled in each hole has a surface shape that is gently inclined corresponding to the surface shape of the CMP layer that is gently inclined.

In another aspect of the electro-optical device according to the present invention, the uneven layer is formed of a conductive film, and the CMP layer is formed of a film that is more easily polished by the CMP process than the conductive film.

According to this aspect, the CMP layer is made of a film (insulating film or conductive film) that is more easily polished by the CMP process than the uneven layer made of the conductive film. By the CMP process, the surface shape is gradually inclined from the edge to the center.

In this aspect, the conductive film is made of a metal film containing at least one of aluminum, titanium and tantalum, and the CMP layer is made of one of an insulating film of a silicon nitride film and a silicon oxide film. Is also good.

According to this structure, the CMP layer is formed of a silicon nitride film or a silicon oxide film which is more easily polished by the CMP process than the metal film containing at least one of aluminum, titanium and tantalum which forms the uneven layer. Therefore, the CMP layer filled in the concave portion has a surface shape that is gradually inclined from the edge toward the center by the CMP process.

In the aspect in which the uneven layer is formed of a conductive film, the conductive film may form a relay layer for transmitting the electric force to the pixel electrode.

According to this structure, the uneven layer formed of the conductive film has not only a function of providing unevenness to the pixel electrode but also a function as a relay layer for transmitting electric force to the pixel electrode. Can be simplified as compared with a case where the above is realized by using different films.

In another aspect of the electro-optical device of the present invention, the uneven layer is made of an insulating film, and the CMP layer is made of a film that is more easily polished by the CMP than the insulating film.

According to this aspect, the CMP layer is made of a film (insulating film or conductive film) that is more easily polished by the CMP process than the uneven layer made of the insulating film. By the CMP process, the surface shape is gradually inclined from the edge to the center.

In this aspect, the CMP layer may be formed of any one of a silicon nitride film and a silicon oxide film.

According to this structure, the CMP layer is more likely to be chemically polished by the CMP process than the insulating film forming the concavo-convex layer.
, The CMP layer buried in the concave portion has a surface shape gradually inclined from the edge toward the center by the CMP process.

In the aspect in which the uneven layer is formed of the first insulating film, the electric force is transmitted between the one substrate and the first insulating film to the pixel electrode and the first and second insulating films are formed. It may further include a conductive layer for preventing intrusion of moisture through at least one of them.

According to this structure, when the conductive layer functioning as a relay layer for transmitting an electric force to the pixel electrode is used, and the concave portion of the uneven layer located above the conductive layer becomes a moisture entry path. In addition, it is possible to construct a configuration for preventing moisture from entering from the concave portion. Therefore, in various aspects of the present invention, for example, since a conductive layer having a function of preventing moisture intrusion is used as a concavo-convex layer, it is possible to prevent a situation in which the recess becomes a new moisture intrusion path. Is advantageous.

In this case, the conductive layer may be formed of a light-shielding film and include a portion for closing a gap between the pixel electrodes adjacent to each other when viewed from the counter substrate.

According to this structure, the conductive layer formed of the light-shielding film not only functions as a relay layer for transmitting electric force to the pixel electrodes and also prevents moisture from entering, but also shields external light in the gaps between the pixel electrodes. Therefore, the stacked structure and the manufacturing process can be simplified as compared with the case where these functions are realized by using different films.

In another aspect of the electro-optical device according to the present invention, the concavo-convex layer includes a light-shielding film and includes a portion for closing a gap between the pixel electrodes adjacent to each other when viewed from the counter substrate side.

According to this aspect, since the uneven layer formed of the light-shielding film has not only a function of providing unevenness to the pixel electrode but also a function of shielding external light in the gap between the pixel electrodes, these two functions are separately provided. Compared to the case of using a membrane,
The laminated structure and the manufacturing process can be simplified.

In another aspect of the electro-optical device according to the present invention, the concave-convex layer is formed such that the convex portion is formed around the concave portion around the concave portion.
It is inclined toward the concave surface of the MP layer.

According to this aspect, inside the concave portion,
In addition to the surface shape of the CMP layer gently inclined from the edge toward the center, the projections of the uneven layer are inclined toward the concave surface of the CMP layer around the recess. Therefore, a surface shape that is gently inclined over a wide range from the surface of the concave-convex layer around the concave portion to the surface of the CMP layer inside the concave portion can be obtained. Therefore, the pixel electrode formed above the CMP layer has a surface shape that is gently inclined over a wider range. As a result, the intensity of the scattered light at the pixel electrode increases more remarkably. In addition, since the uneven layer located around the concave portion is inclined, it is possible to reduce the planar size of the concave portion, which is necessary for obtaining a suitable inclined shape in the pixel electrode. Therefore, the amount of water that enters through the concave portion can be reduced according to the plane size of each concave portion, particularly when the concave portion is formed of a through hole.

In order to solve the above-mentioned problems, a method for manufacturing an electro-optical device according to the present invention is a method for manufacturing an electro-optical device for manufacturing the above-described electro-optical device according to the present invention. A step of forming the uneven layer on one substrate; a step of forming a material layer to be the CMP layer on the uneven layer; A step of subjecting the surface of the CMP layer, which fills the concave portions after the convex portions are exposed, to chemical polishing by a predetermined amount under conditions where the convex portions are hardly polished; Forming the pixel electrode from a non-conductive material.

According to the method of manufacturing an electro-optical device of the present invention, a concavo-convex layer is formed on at least one substrate on which wiring is formed, and then a material layer serving as a CMP layer is formed on the concavo-convex layer. . Subsequently, a CMP process is performed on the material layer under conditions where the uneven layer is less likely to be chemically polished than the material layer. Therefore, in this CMP process, first, only the material layer is chemically polished to expose the projections of the uneven layer. Thereafter, a CMP process is performed until the surface of the CMP layer filling the concave portion is chemically polished by a predetermined amount. At this time, the closer the polishing cloth or the like subjected to the CMP treatment is to the edge of the concave portion, the more difficult it is to hit the CMP layer located in the concave portion (the edge of the convex portion disturbs).
The closer the MP layer is to the edge of the recess, the more difficult it is to perform chemical polishing. On the other hand, the polishing cloth or the like that performs the CMP process is more likely to hit the CMP layer located in the concave portion as it is closer to the center of the concave portion, and the CMP layer is more easily polished chemically as it is closer to the center of the concave portion. As a result, the CMP depressed from the convex part
A structure is obtained in which the layer fills the recesses, and in particular, in each recess, the CMP layer has a surface shape that gradually slopes from the edge toward the center. Thereafter, a pixel electrode is formed from a reflective material above the uneven layer and the CMP layer. Therefore, the pixel electrode made of a reflective film formed above the CMP layer filled in each concave portion via an interlayer insulating film or the like is gently inclined according to the surface shape of the gently inclined CMP layer. It has a surface shape.

In one aspect of the method of manufacturing an electro-optical device according to the present invention, in the step of performing the CMP treatment, a selection ratio of the CMP layer to the uneven layer in the chemical polishing is 1 or more and smaller than a predetermined value. Set.

According to this aspect, since the selectivity of the CMP layer to the uneven layer in the chemical polishing is set to 1 or more, the CM positioned inside the concave portion during the CMP process.
The P layer is more chemically polished and recessed than the uneven layer located therearound. At this time, the polishing cloth and the like are spaced apart from the edge of the uneven layer located around the recessed recess. It is easier to hit than the uneven layer surface. Here, select the ratio
If the uneven layer is set to a value smaller than the predetermined value so that the uneven layer is slightly chemically polished as compared with the P layer, the edge of the uneven layer located around the recessed concave portion is higher than the surface of the uneven layer away from the edge. Also, since the surface is easily polished by chemical polishing, it is possible to obtain a surface shape in which the uneven layer located around the concave portion is inclined toward the concave surface of the CMP layer. Accordingly, a surface shape that is gently inclined over a wide range from the surface of the uneven layer around the concave portion to the surface of the CMP layer inside the concave portion can be obtained. In addition, since the uneven layer located around the concave portion is inclined, it is possible to reduce the planar size of the concave portion, which is required to obtain a suitable inclined shape in the pixel electrode, and at the same time, to reduce the internal size of the concave portion. It is possible to reduce the amount of chemical polishing for the CMP layer in the above.

The operation and other advantages of the present invention will become more apparent from the embodiments explained below.

[0037]

Embodiments of the present invention will be described below with reference to the drawings. In the present embodiment, the present invention is applied to a liquid crystal device with a built-in drive circuit.

(First Embodiment of Electro-Optical Device) A circuit configuration of a liquid crystal device which is a first embodiment of the electro-optical device according to the present invention will be described with reference to the block diagram of FIG. FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming an image display area of a liquid crystal device.

In FIG. 1, a plurality of pixels formed in a matrix and constituting an image display area of the liquid crystal device according to the present embodiment are provided with an FET 3 for controlling a pixel electrode 13.
A plurality of 0s are formed in a matrix, and the data line 46a to which an image signal is supplied is electrically connected to the source of the FET 30. The image signals S1, S2,..., Sn written to the data lines 46a may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 46a for each group. good. Further, the scanning line 43a is electrically connected to the gate of the FET 30, and the scanning signals G1, G2,... It is configured. The pixel electrode 13
The image signals S1, S2,..., And Sn supplied from the data line 46a are written at a predetermined timing by closing the switch of the FET 30, which is a switching element, for a predetermined period, which is electrically connected to the drain of the FET 30. . The image signals S1, S2,..., Sn of a predetermined level written in the liquid crystal via the pixel electrodes 13 are held for a certain period between the counter electrodes (described later) formed on the counter substrate (described later). . The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level, thereby enabling gray scale display. In the normally white mode, the incident light cannot pass through the liquid crystal portion according to the applied voltage. In the normally black mode, the incident light does not pass through the liquid crystal according to the applied voltage. The light can pass through the portion, and as a whole, light having a contrast corresponding to the image signal is reflected from the liquid crystal device. Here, in order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 13 and the counter electrode. For example,
The voltage of the pixel electrode 13 is held by the storage capacitor 70 for a time that is three orders of magnitude longer than the time when the source voltage is applied. Thereby, the holding characteristics are further improved, and a liquid crystal device having a high contrast ratio can be realized.

Next, referring to FIG. 2 and FIG. 3, a laminated structure under the pixel electrode 13 that gives irregularities to the surface of the pixel electrode 13, a structure of the FET 30 formed under the pixel electrode 13, and a method of manufacturing the same will be described. explain. Here, FIG.
FIG. 3 is a plan view of a plurality of adjacent pixel electrodes 13 formed on the element substrate, and FIG. 3 is a cross-sectional view showing a stacked structure under the pixel electrode 13 formed on the element substrate near one FET 30. FIG.

In FIG. 2, on the element substrate of the liquid crystal device, a plurality of pixel electrodes 13 (indicated by a two-dot chain line) are provided in a matrix. In particular, on the surface of the pixel electrode 13, a number of depressions 13 a (indicated by a number of circles in the figure) are formed in a number of holes formed in the second conductive layer located below the pixel electrode 13. It is formed correspondingly.

That is, in FIG. 3, each pixel electrode 13 made of a conductive reflective film such as an Al (aluminum) film or a Ta (tantalum) film has irregularities on the second conductive layer 10 formed thereunder. A large number of depressions 13a are formed on the surface corresponding to the large number of holes 10a formed in the hole. In this embodiment, in particular, as described later, the hole-filling insulating layer 11c buried in the large number of holes 10a has a surface shape gently inclined from the edge to the center in the hole 10a. The pixel electrode 13 formed through the third interlayer insulating films 11b and 11c is configured to have a surface shape including a large number of gently inclined depressions 13a corresponding to the holes 10a.

In FIG. 3, P is an example of one of the substrates.
An N-type (or N-type) semiconductor substrate 1 has an N-type (or P-type)
The FET 30 is formed in the well region 2 of the (type), and the FETs 30 are separated from each other by the field oxide film 3 for element isolation. If a semiconductor substrate made of single crystal silicon, which is usually called a wafer, is used as the semiconductor substrate 1, the FET 30 can be directly formed on the substrate 1 as described above. A silicon substrate, a quartz substrate, a glass substrate, or the like on which an FET or a TFT can be formed through a film may be used. In particular, in the case of a reflection type liquid crystal device in which a pixel electrode is formed of a reflection film as in the present embodiment, it is not necessary to transmit light through the substrate 1, so that an opaque semiconductor substrate can be used. This is advantageous because it is easy to fabricate elements such as FETs when manufacturing a small liquid crystal device. The well region 2 is formed by impurity diffusion, and the field oxide film 3 is formed by selective thermal oxidation.

In each FET 30, a source region 6a and a drain region 6b which are heavily doped are formed in the well region 2 through the opening of the field oxide film 3.
A gate electrode 5 is provided so as to oppose a channel region located between them via a gate insulating film. A first interlayer insulating film 7 is formed on the gate electrode 5 and the field oxide film 3. The first conductive layers 8a and 8b are provided on the first interlayer insulating film 7, and the source region 6a and the drain region 6b are provided through the contact holes 7a and 7b opened in the first interlayer insulating film 7, respectively. To form a source electrode and a drain electrode of the FET 30. The gate electrode 5 is made of, for example, highly doped conductive polysilicon or conductive metal silicide, and is formed by a CVD method or the like. As the first interlayer insulating film 7, for example, NSG (non-doped silicate glass), PSG (phosphorus silicate glass), BSG (boron silicate glass), BPS
A highly insulating glass such as G (boron phosphorus silicate glass), a silicon oxide film, a silicon nitride film, or the like is used, and is formed by a sputtering method, a plasma CVD method using TEOS (tetraethylorthosilicate), or the like. As the first conductive layers 8a and 8b, for example, a metal film having high conductivity such as an Al film or a Ta film is used.
It is formed to a thickness of, for example, about 500 nm by a sputtering method.

Further, a second interlayer insulating film 9 is provided on the FET 30 configured as described above, and a large number of holes 10a are formed on the second interlayer insulating film 9 as described above. The second conductive layer 10, which is an example of the uneven layer, is formed. On the second conductive layer 10, third interlayer insulating films 11a and 11b are formed. Like the first interlayer insulating film 7, the second interlayer insulating film 9 and the third interlayer insulating film 11a are made of, for example, a highly insulating glass such as NSG, PSG, BSG, or BPSG, or a silicon oxide film, a silicon nitride film, or the like. The thickness of the second interlayer insulating film is, for example, 1000 nm.
And the third interlayer insulating films 11a and 11b
It is about 0 nm. Similarly to the first conductive layers 8a and 8b, the second conductive layer 10 is made of a highly conductive metal film such as an Al film or a Ta film, and has a thickness of, for example, 500.
８００800 nm.

In this embodiment, particularly, the second conductive layer 10
On the other hand, the first conductive layer 8 forming the drain electrode is formed through the contact hole 9b opened in the second interlayer insulating film 9.
b, and on the other hand, the third interlayer insulating film 1
It is electrically connected to the pixel electrode 13 through a contact hole 11h opened in 1a and 11c. That is, the second conductive layer 10 is configured to relay the pixel electrode 9a and the first conductive layer 8b constituting the drain electrode of the FET 30. Therefore, compared with a case where the pixel electrode 13 is electrically connected to the drain electrode at a time through one contact hole, the step of opening the contact hole becomes easier, and a highly accurate and small-diameter contact hole is formed. be able to. As described above, in the present embodiment, in particular, the second
The conductive layer film 10 not only has a function of providing the pixel electrode 13 with irregularities but also has a function as a relay layer for transmitting electric force to the pixel electrode 13. Therefore, when these two functions are realized using separate films. As compared with the above, the laminated structure and the manufacturing process can be simplified.

In this embodiment, the contact hole 1
In 1h, a conductive material such as a refractory metal such as W (tungsten) is buried as the connection plug 12 separately from the material forming the pixel electrode 13, but the contact holes 7a, 7b and 9b are also filled. Similarly, a conductive material as a connection plug may be buried separately from the materials forming the first conductive layers 8a and 8b and the second conductive layer 10.

In this embodiment, in particular, a large number of holes 10a formed in the second conductive layer 10 are filled with a hole filling insulating layer 11c which is an example of a CMP layer. In particular, the second conductive layer 10 and the hole-filling insulating layer 11c that define the periphery of the hole 10a are subjected to a CMP process during the manufacturing process, and the surface of the hole-filling insulating layer 11c that has been subjected to the CMP process is , Are recessed from the surface of the second conductive layer 10. The structure in which the recessed insulating layer 11c fills each hole 10a as described above can be easily obtained by setting the insulating layer 11c to be filled more easily than the second conductive layer 10 in the CMP process.

Here, a process of forming the filling insulating layer 11c including such a CMP process will be described with reference to FIG. FIG. 4 is a process diagram showing the steps of forming the hole 10a and the filling insulating layer 11c in the portion A of FIG. 3 in the order of (a) to (c).

As shown in FIG. 4A, for example, SiO ₂
On the second interlayer insulating film 9 made of a (silicon oxide) film, a second conductive layer 10 made of, for example, a TiN / Al / TiN / Ti film or a Ta film is formed. At this time, a hole 10a is formed in the second conductive layer 10 by photolithography and etching.

Next, as shown in FIG.
An insulating layer 11c ′ made of an iO ₂ film is formed on the entire surface of the second conductive layer 10 and the second interlayer insulating film 9 exposed from the hole 10a.

Next, as shown in FIG. 4C, a CMP process is performed on the insulating layer 11c '. More specifically, a process of polishing the surface of the insulating film 11c 'with a polishing cloth is performed using an alkali-based solution having a chemical etching effect or the like as a dispersion medium of the polishing agent. In the present embodiment, in particular, a polishing cloth, an abrasive, a solvent, or the like that makes the insulating layer 11C ′ easier to polish in the CMP process than the second conductive layer 10 is used. This CMP processing is shown in FIG.
When the process is performed on the insulating film 11c 'in the state shown in (b), the surface of the second conductive layer 10 in a region other than the hole 10a is exposed at a certain point along with the progress of the chemical polishing. Further, if the CMP process is continued, the polishing cloth or the like that performs the CMP process becomes closer to the edge of the hole 10a, so that the edge of each hole 10a disturbs the filling insulating layer 11c located in the hole 10a.
It becomes hard to hit. That is, the closer to the edge of the hole 10a, the more difficult it is for the hole-filling insulating layer 11c to be chemically polished. On the other hand, as the polishing cloth or the like that performs the CMP process is closer to the center of the hole 10a, it easily hits the buried insulating layer 11c located in the hole 10a. That is, the closer to the center of the hole 10a, the more easily the hole-filling insulating layer 11c is chemically polished. As a result, as shown in FIG. 4C, the hole-filling insulating layer 11c that is recessed from the surface of the second conductive layer 10 has a surface shape that gradually slopes from the edge to the center in the hole 10a. It has been.

Therefore, as shown in FIG.
The pixel electrode 13 formed above the hole-filling insulating layer 11c buried in the semiconductor via the third interlayer insulating films 11a and 11b
Has a depression 13a that is gently inclined corresponding to the surface shape of the filling insulating layer 11c that is gently inclined.
For this reason, the pixel electrode 13 formed of the reflective film scatters external light incident from the counter substrate side (upper side in FIG. 3) via the liquid crystal toward the display screen, and therefore, is more scattered than a flat pixel electrode. The light intensity increases significantly.

As described above, according to the present embodiment, the viewing angle in the reflection type liquid crystal device can be widened using a relatively simple structure.

In this embodiment, the second conductive film 10 is
For example, it is composed of a TiN / Al / TiN / Ti film or a Ta film containing at least one of Al, Ti and Ta, and the filling insulating layer 11c is made of SiO ₂ (silicon oxide).
If the insulating layer 11c is made of a film, the filling insulating layer 11c is more easily polished by the CMP process than the second conductive film 10, so that the filling insulating layer 11c filled in each hole 10a is formed as described above. A structure that is gently inclined from the edge toward the center can be easily obtained by the CMP process.

In the above embodiment, the second conductive layer 1
Although the surface shape of the second conductive layer 10 was made uneven by forming a number of holes 10a at 0, a portion excluding a portion connected to the contact holes 7b and 9b for relaying was formed into a number of protrusions. By doing so, the surface shape of the second conductive layer 10 may be made uneven. Alternatively, the hole 10 a may be a through hole or a hole that stops in the middle of the conductive layer 10. Hole 10
The planar shape of a does not matter whether it is a circle, an ellipse, a regular polygon, a rectangle, or the like, and its size may be unified,
There may be large and small variations, for example, a diameter of 0.5 to 1
It may be about 0 μm. Also, the density may be appropriately set according to the required viewing angle. Further, the planar arrangement of the large number of holes 10a may be irregular or regularly arranged. In short, if the insulating film constituting the filling insulating layer 11c is chemically polished during the CMP process, and the exposed portions of the second conductive layer 10 thereunder are dispersed in a plane, the exposed portions are removed. Since a gentle slope is formed in the filling insulating layer 11c as a starting point or an edge, the same effect as that of the present embodiment of improving the light diffusion ability of the pixel electrode 13 formed thereabove can be obtained.

Further, in the present embodiment, as shown in FIG.
a is not provided, that is, in this planar area, the second
The hole 10a is not formed in the conductive layer 10. Therefore, in the FET 30 located below the second conductive layer 10, light is not shielded from the outside light entering the gap between the adjacent pixel electrodes 13 from the counter substrate side through the liquid crystal through the hole 10a. This is done by a flat portion of the second conductive layer 10. If the hole 10a is also formed in a portion facing the gap between the pixel electrodes 13, if such external light enters the FET 30 through the hole 10a, light leakage ( In other words, light enters the channel region and the off-current increases due to the photoelectric effect), and the transistor characteristics of the FET 30 deteriorate.

As described above, according to the first embodiment, the relay function of connecting the pixel electrode 13 and the drain electrode to the second conductive layer 10 as one layer, and the function of providing the pixel electrode 13 with irregularities are provided. And a light shielding function for the FET 30. This is extremely excellent in simplifying a layer configuration and a manufacturing process for providing these functions.

(Second Embodiment of Electro-Optical Device) A liquid crystal device according to a second embodiment of the electro-optical device according to the present invention will be described with reference to FIGS. FIG. 5 schematically shows a problem in the first embodiment that may occur depending on a use situation, and FIG. 6 shows a second embodiment corresponding to the cross section of FIG. 3 in the first embodiment. FIG. 7 is a process diagram showing the steps of forming the hole 81a and the hole-filling insulating layer 11c in the portion B of FIG. 6 in the order of (a) to (c). In the second embodiment shown in FIGS. 6 and 7, the same components as those in the first embodiment shown in FIGS. 3 and 4 are denoted by the same reference numerals.
The description is omitted. Also, in FIGS. 6 and 7,
In order to make each layer and each member a size recognizable in the drawings, the scale of each layer and each member is different.

In FIG. 5, the lower surface of the pixel electrode 13 made of a reflective film such as an Al film and the second conductive layer 10 made of an Al film and the like below the lower surface of the pixel electrode 13 depending on the use conditions in the case of the first embodiment.
A state of multiple reflection using the third interlayer insulating films 11a and 11b as a medium which can occur between the upper surface of the flat portion 10b and the upper surface of the flat portion 10b is schematically shown on a cross section of the liquid crystal device. In FIG. 5, since the light shielding film 23 is formed in a lattice pattern on the counter substrate 20 in correspondence with the gap between the pixel electrodes 13, external light does not vertically enter the gap between the pixel electrodes 13. . However, the external light L1 obliquely transmitted from the side of the opposing substrate 20 to the side of the light-shielding film 23 passes through the pixel electrode 13
Incident on the gap. The external light L1 is primarily transmitted to the flat portion 10 of the second conductive layer 10 where the hole 10a is not formed.
b performs light shielding on the FET 30 below the second conductive layer 10, and after multiple reflections on the upper surface of the flat portion 10 b and the lower surface of the pixel electrode 13, the multiple reflection light L
As 2, the possibility that the light enters the FET 30 via the hole 10a is left. In particular, when the strong external light L1 is received, such multi-reflected light L2 causes a light leak that cannot be ignored in the FET 30.

Therefore, in the second embodiment, unlike the first embodiment, the hole 10a is not formed in the second conductive layer 10 but is instead formed by a perforated insulating material whose sole purpose is to provide irregularities. A layer 81 is provided on the second conductive layer 10, and the holes 81 a of the perforated insulating layer 81 are further filled with a filling insulating layer 11 c. For other configurations, refer to
This is the same as in the embodiment.

Here, the process of forming the hole-filling insulating layer 11c including the CMP process in the second embodiment will be described with reference to FIG.
This will be described with reference to FIG.

As shown in FIG. 7A, for example, TiN /
Second conductive layer 10 made of Al / TiN / Ti film or Ta film
For example, a SiN (silicon nitride) film or Ta ₂ O
_{5 A} perforated insulating layer 81 made of a (tantalum oxide) film is formed. At this time, a hole 81a is formed in the perforated insulating layer 81 by photolithography and etching.

Next, as shown in FIG.
The insulating layer 11 c ′ made of an iO ₂ film is
And on the entire surface of the second conductive layer 10 exposed from the hole 81a.

Next, as shown in FIG. 7C, a CMP process is performed on the insulating layer 11c '. More specifically, a process of polishing the surface of the insulating film 11c 'with a polishing cloth is performed using an alkali-based solution having a chemical etching effect or the like as a dispersion medium of the polishing agent. In the present embodiment, in particular, the insulating layer 11C ′ is better than the perforated insulating layer 81.
A polishing cloth that makes it easier to grind the CMP process.
An abrasive, a solvent, or the like is used. This CMP processing is shown in FIG.
When the process is performed on the insulating film 11c 'in the state shown in (b), the surface of the perforated insulating layer 81 in a region other than the holes 81a is exposed at a certain point in time with the progress of the chemical polishing. Further, when the CMP processing is continued, the polishing cloth or the like performing the CMP processing is more likely to disturb the edge of each hole 81a in the hole-filling insulating layer 11c located in the hole 81a as the edge is closer to the edge of the hole 81a.
It becomes hard to hit. In other words, the closer to the edge of the hole 81a, the more difficult it is for the hole-filling insulating layer 11c to be chemically polished. On the other hand, the closer the polishing cloth or the like subjected to the CMP process is to the center of the hole 81a, the easier it is to hit the hole filling insulating layer 11c located in the hole 81a. That is, the closer to the center of the hole 81a, the more easily the hole filling insulating layer 81c is chemically polished. As a result, as shown in FIG. 7C, the hole-filling insulating layer 11c recessed from the surface of the perforated insulating layer 81 has a surface shape that gradually slopes from the edge toward the center of the hole 81a. It has been.

Therefore, as shown in FIG.
The pixel electrode 13 formed above the hole-filling insulating layer 11c buried in the semiconductor via the third interlayer insulating films 11a and 11b
Has a depression 13a that is gently inclined corresponding to the surface shape of the filling insulating layer 11c that is gently inclined.
For this reason, the pixel electrode 13 formed of the reflective film scatters external light incident from the counter substrate side (upper side in FIG. 3) via the liquid crystal toward the display screen, and therefore, is more scattered than a flat pixel electrode. The light intensity increases significantly.

As described above, according to the present embodiment, the viewing angle in the reflection type liquid crystal device can be widened using a relatively simple structure.

In the present embodiment, for example, if the hole-filling insulating layer 11c is made of a SiO ₂ film and the hole-filling insulating layer 81 is made of a SiN film or Ta ₂ O ₅ film, the hole-filling insulating layer 11c becomes Since a condition that is more easily polished by the CMP process than the layer 81 is satisfied, as described above,
The structure in which the hole-filling insulating layer 11c filled in each hole 81a is gently inclined from the edge toward the center is a CM.
It is easily obtained by P treatment.

Further, in the present embodiment, the second conductive layer 1
0 is made of a material having a high ability to block moisture, such as a TiN / Al / TiN / Ti film or a Ta film, for example, a perforated insulating film 81 having a large number of holes 81a formed therein, or a filled insulating layer. Moisture entering through the inside or interface of 11c can be blocked by the second conductive layer 10 in which the hole 10a is not opened as in the first embodiment. That is, in the present embodiment, it is possible to prevent the inconvenience of moisture entering through the large number of holes 10a opened in the second conductive layer 10 which may occur in the first embodiment depending on the use situation.

In this embodiment, the second conductive layer 1
0 may be formed of a light-shielding film such as an Al film or a Ta film, and may include a portion that closes a gap between pixel electrodes 13 adjacent to each other when viewed from the counter substrate side. With this configuration, in the FET 30 located below the second conductive layer 10, the gap between the adjacent pixel electrodes 13
External light incident from the 0 side via the liquid crystal layer 50 (see FIG. 5)
Is almost completely shielded by the second conductive layer 10. However, the perforated insulating layer 81 may be formed of a light-shielding film including a portion that closes a gap between adjacent pixel electrodes 13. With this configuration, the perforated insulating layer 81 formed of a light-shielding film can have a part of the light-shielding function for the FET 30, and more complete and highly redundant light-shielding can be performed.

As described above, according to the second embodiment, on the one hand, the perforated insulating layer 81 has the function of providing the pixel electrode 13 with irregularities, and on the other hand, the second insulating layer 81 as one layer The conductive layer 10 has three functions: a relay function for connecting the pixel electrode 13 and the drain electrode, a function for blocking the intrusion of moisture, and a function for shielding the FET 30 from light. It is extremely excellent in simplifying the configuration and the manufacturing process.

(Third Embodiment of Electro-Optical Device) A liquid crystal device according to a third embodiment of the electro-optical device according to the present invention will be described with reference to FIG. FIG. 8 is a process chart showing the steps of forming the hole 81a and the filling insulating layer 11c in the order of (a) to (c). In the third embodiment shown in FIG. 8, the same components as those in the second embodiment shown in FIGS. 6 and 7 are denoted by the same reference numerals, and description thereof will be omitted. In FIG. 8, the scale of each layer and each member is made different so that each layer or each member has a size recognizable in the drawing.

In the third embodiment, unlike the case of the second embodiment, as shown in FIG.
The surface is filled with an insulating layer 11c around the hole 81a.
Inclined portion 81b inclined toward the depressed surface of
Having. Other configurations are the same as those in the second embodiment.

Here, the process of forming the hole-filling insulating layer 11c including the CMP process in the third embodiment will be described with reference to FIG.
This will be described with reference to FIG.

As in the case of the second embodiment, FIG.
And as shown in FIG. 8B, for example, TiN / Al / T
A perforated insulating layer 81 made of, for example, a SiN film or a Ta ₂ O ₅ film is formed on the second conductive layer 10 made of an iN / Ti film or a Ta film.
Is formed, and an insulating layer 11c ′ made of, for example, an SiO ₂ film is formed.
Is formed on the entire surface of the second conductive layer 10 exposed from the perforated insulating layer 81 and the hole 81a.

Next, as shown in FIG. 8C, a CMP process is performed on the insulating layer 11c '. In the present embodiment, the insulating layer 11C' is more particularly than the perforated insulating layer 81.
Not only makes the polishing easier in the CMP process, but also a combination of a polishing cloth, an abrasive, and a combination in which the selectivity of the hole-filling insulating layer 11c with respect to the hole-forming insulating layer 81 is 1 or more and smaller than a predetermined value. A solvent or the like is used. Alternatively, in the steps of FIGS. 8A and 8B, the materials of the perforated insulating layer 81 and the filled insulating layer 11c are selected so as to obtain such a selection ratio.

Under these conditions, the CMP process is performed as shown in FIG.
When the process is performed on the insulating film 11c 'in the state shown in (b), after the surface of the perforated insulating layer 81 in the region other than the hole 81a is exposed, the selectivity is set to 1 or more. As in the case of the second embodiment, the hole-filling insulating layer 11c inside the hole 81a has a surface shape that is gently inclined from the edge to the center, as shown in FIG. 7C. ing. On the other hand, after the surface of the perforated insulating layer 81 is exposed, the polishing cloth or the like, with respect to the edge 81b 'of the perforated insulating layer 81 located around the hole 81a,
It is easier to hit than the surface of the perforated insulating layer 81 away from the edge 81b '. At this time, if the selectivity is set to be smaller than a predetermined value so that the perforated insulating layer 81 is slightly chemically polished as compared with the hole-filling insulating layer 11c, the edge 81b 'of the perforated insulating layer 81 will be as shown in FIG. As shown in (c), the inclined portion 81b is inclined toward the concave surface of the filling insulating layer 11c.

As a result, the hole 81a is formed by the CMP process.
, A surface shape that is gently inclined over a wide range from the inclined portion 81b around the surface to the surface of the filling insulating layer 11c inside the hole 81a is obtained.

In addition, since the inclined portion 81c is formed around the hole 81a, the diameter of the hole 81a required for obtaining an appropriate inclined shape in the pixel electrode 13 can be reduced. Becomes By reducing the size of the hole 81a, the CM for the hole-filling insulating layer 11c inside the hole 81a can be reduced.
The amount of chemical polishing by P processing can be reduced, and the time required for chemical polishing by CMP processing can be reduced.
The hole 81a in the case where the hole 1a is constituted by a through hole, etc.
Can be reduced according to the reduction in the diameter of each hole 81a.

As described above, according to the third embodiment, the pixel electrode 13 formed of the reflection film is formed above the perforated insulating layer 81 and the filled insulating layer 11c by using a relatively simple manufacturing process. It can be configured to have a surface shape that is gently inclined over a wider range. As a result,
The intensity of the scattered light at the pixel electrode 13 increases more remarkably.

(Fourth Embodiment of Electro-Optical Device) A liquid crystal device which is a fourth embodiment of the electro-optical device according to the present invention will be described with reference to FIG. FIG. 9 is a cross-sectional view of the fourth embodiment corresponding to the cross section of FIG. 3 in the first embodiment. In the fourth embodiment shown in FIG. 9, the same components as those in the first embodiment shown in FIG. 3 are denoted by the same reference numerals, and the description thereof will be omitted. Further, in FIG. 9, the scale of each layer and each member is different in order to make each layer and each member have a size recognizable in the drawing.

In the fourth embodiment, unlike the case of the first embodiment, as shown in FIG.
The pixel electrode 1 without the connection plug 12
Part of 3 ′ extends in the contact hole 11h and is directly connected to the second conductive layer 10. Other configurations are the same as those in the first embodiment.

Therefore, according to the fourth embodiment, the depression 13a is formed with respect to the pixel electrode 13 'as in the first embodiment.
Can be given, and the manufacturing process can be simplified as compared with the first embodiment. In the fourth embodiment,
It is preferable to select these materials so that no electrolytic corrosion occurs between the pixel electrode 13 ′ and the second conductive layer 10 in direct contact.

(Fifth Embodiment of Electro-Optical Device) A liquid crystal device which is a fifth embodiment of the electro-optical device according to the present invention will be described with reference to FIG. FIG. 10 is a cross-sectional view of the fifth embodiment corresponding to the cross section of FIG. 3 in the first embodiment. Note that in the fifth embodiment shown in FIG.
The same components as those of the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted. FIG.
At 0, the scale of each layer and each member is made different so that each layer and each member have a size that can be recognized on the drawing.

In the fifth embodiment, unlike the first embodiment, as shown in FIG. 10, a second conductive layer 10 ′ having a large number of holes 10 a is formed by connecting a pixel electrode 13 and an FET 30.
It is not used as a relay conductive layer for connecting to the drain electrode, but is used exclusively as a layer for providing unevenness by the hole 10a. Therefore, in this case, the conductive layer 10a may be made of an insulating layer. On the other hand, contact hole 11h '
Is opened from the pixel electrode 13 to the first conductive layer 8b 'constituting the drain electrode, and the connection plug 12' is embedded. Other configurations are the same as those in the first embodiment.

Therefore, according to the fifth embodiment, as compared with the first embodiment, the depression 13a can be provided to the pixel electrode 13 up to the vicinity of the contact hole 11h ', and external light is diffused. The area of the pixel electrode 13 can be increased.

(Sixth Embodiment of Electro-Optical Device) A liquid crystal device which is a sixth embodiment of the electro-optical device according to the present invention will be described with reference to FIG. FIG. 11 is a cross-sectional view of the sixth embodiment corresponding to the cross section of FIG. 3 in the first embodiment. Incidentally, in the sixth embodiment shown in FIG.
The same components as those of the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted. FIG.
In FIG. 1, the scale of each layer and each member is made different so that each layer and each member have a size recognizable in the drawing.

In the sixth embodiment, as shown in FIG. 11, a substrate 1 ′ such as a glass substrate or a quartz substrate is used instead of the semiconductor substrate 1 as compared with the configuration of the first embodiment. On this substrate 1 ', not TFT30 but TFT3
0 'is formed. A semiconductor film such as a polysilicon film, an amorphous silicon film, a single crystal silicon film or the like constituting the TFT 30 ′ is provided with a highly doped source region 6 a ′ and a drain region 6 b ′. A channel region is provided at a position facing the gate electrode 5 via the insulating film. In this case, the gate insulating film may be a silicon oxide film formed by thermal oxidation, or may be a silicon oxide film, a silicon nitride film deposited by a CVD method or the like, or a film having a multilayer structure including these films. Other configurations are the same as those in the first embodiment.

Therefore, according to the sixth embodiment, as compared with the first embodiment, it is possible to widen the viewing angle in a reflection type liquid crystal device of a TFT active matrix driving system having a TFT 30 ′, and furthermore, In the peripheral region of the substrate 1 'and the region below the pixel electrode 13, circuit elements constituting a drive circuit and the like are arranged in parallel with the process of forming the TFT 30'.
Since it can be formed using FT, it is practically advantageous.

(Overall Configuration of Electro-Optical Device) Next, the overall configuration of the embodiment of the liquid crystal device configured as described above is shown in FIG.
2 and FIG. FIG. 12 is a plan view of the element substrate together with the components formed thereon viewed from the counter substrate side, and FIG. 13 is a sectional view taken along line HH ′ of FIG.
It is sectional drawing.

In FIG. 14, a sealing material 52 is provided on the substrate 1 along the edge thereof, and a light-shielding film 53 as a frame is provided in parallel with the inside of the sealing material 52. The data line driving circuit 101 is provided in a region outside the sealing material 52.
And the mounting terminals 102 are provided along one side of the substrate 1, and the scanning line driving circuit 104
It is provided along the side. If the delay of the scanning signal supplied to the scanning line is not a problem, the scanning line driving circuit 10
It goes without saying that 4 may be on one side only. Further, the data line driving circuits 101 may be arranged on both sides along the side of the image display area. For example, the odd-numbered data lines supply image signals from a data line driving circuit arranged along one side of the image display area, and the even-numbered data lines are arranged along the opposite side of the image display area. An image signal may be supplied from the provided data line driving circuit. If the data lines are driven in a comb-tooth shape in this manner, the area occupied by the data line driving circuit 101 can be expanded, so that a complicated circuit can be formed. Further, on one remaining side of the substrate 1, a plurality of wirings 105 for connecting between the scanning line driving circuits 104 provided on both sides of the image display area are provided. In at least one of the corners of the opposing substrate 20, a conductive material 106 for establishing electric conduction between the substrate 1 and the opposing substrate 20 is provided. Then, as shown in FIG. 13, the sealing material 5 shown in FIG.
2 has substantially the same contour as the sealing material 5.
2 and the substrate 1 and the opposing substrate 2
0 constitutes a liquid crystal device in which the liquid crystal layer 50 is sealed. On the side of the opposing substrate 20 facing the liquid crystal layer 50, an opening area of each pixel is defined, and is generally called a black mask or a black matrix for improving a contrast ratio and preventing color mixing between adjacent pixels. Light shielding film 23
Is provided.

A sampling circuit for sampling an image signal at a predetermined timing on the substrate 1 of the liquid crystal device according to the embodiment described with reference to FIGS. For this purpose, a precharge circuit for writing a precharge signal of a predetermined potential at a timing preceding the image signal for each data line may be formed, or the quality, defect, etc. of the liquid crystal device during manufacture or shipping may be inspected. May be formed.

Further, in the above-described embodiment, Japanese Patent Application Laid-Open
JP-A-127497, JP-B-3-52611,
JP-A-3-125123, JP-A-8-17110
As disclosed in Japanese Unexamined Patent Application Publication No. H11-101, a position facing the FET 30 or the TFT 30 ′ on the substrate 1 (that is, T
A light-shielding film made of, for example, a refractory metal may also be provided on the lower side of the FT 30). If a light-shielding film is also provided below the FET 30 or the like in this manner, return light from the substrate 1 side or the like will
It can be prevented from being incident on 30 or the like.

In each of the embodiments described above with reference to FIGS. 1 to 13, instead of providing the data line driving circuit 101 and the scanning line driving circuit 104 on the substrate 1, for example, a TA
A drive LSI mounted on a B (Tape Automated Bonding) substrate may be electrically and mechanically connected via an anisotropic conductive film provided on a peripheral portion of the substrate 1. For example, TN is provided on the side of the opposite substrate 20 where the projection light is incident and on the side where the emission light of the substrate 1 is emitted.
(Twisted Nematic) mode, VA (Vertically Aligne)
d) Mode, PDLC (Polymer Dispersed Liquid Crysta)
l) A polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction according to an operation mode such as a mode or a normally white mode / normally black mode.

Since the liquid crystal device in the embodiment described above is applied to a color liquid crystal projector, three liquid crystal devices are used as light valves for R (red), G (green), and B (blue), respectively. The light of each color separated via the dichroic mirror for RGB color separation is incident on the panel as projection light. Therefore, in the present embodiment, no color filter is provided on the opposing substrate 20. However, an RGB color filter may be formed on the counter substrate 20 together with the protective film in a predetermined region facing the pixel electrode 13 where the light shielding film 23 is not formed. Alternatively, it is also possible to form a color filter layer with a color resist or the like below the pixel electrode 13 facing the RGB on the substrate 1. In this manner, the liquid crystal device according to the embodiment can be applied to a color liquid crystal device such as a direct-view or reflection type color liquid crystal television other than the liquid crystal projector. Further, a micro lens may be formed on the counter substrate 20 so as to correspond to one pixel. In this case, a bright liquid crystal device can be realized by improving the efficiency of collecting incident light. Furthermore, a dichroic filter that produces RGB colors using light interference may be formed by depositing a number of interference layers having different refractive indexes on the counter substrate 20. According to the counter substrate with the dichroic filter, a brighter color liquid crystal device can be realized.

The switching element provided in each pixel may be a top gate type FET 30 or a positive stagger type or coplanar type TFT 30 ′, but may be a bottom gate type FET or an inverse stagger type TFT. Each embodiment is effective.

[0097]

According to the electro-optical device of the present invention, in the reflection-type electro-optical device in which the pixel electrode is formed of a reflective film, the CMP layer filled in the concave portion of the concave-convex layer is formed by the CMP process. From the center toward the center, and the pixel electrode formed above it also has a gently inclined surface shape, so the viewing angle can be reduced using a relatively simple configuration. It becomes possible to spread.

Further, according to the method of manufacturing an electro-optical device of the present invention, it is possible to relatively easily manufacture such a reflective electro-optical device having a wide viewing angle.

[Brief description of the drawings]

FIG. 1 is a block diagram of an equivalent circuit such as various elements and wiring provided in a plurality of pixels in a matrix forming an image display area in a liquid crystal device according to a first embodiment of the present invention.

FIG. 2 is a plan view of a pixel electrode according to the first embodiment.

FIG. 3 is a cross-sectional view illustrating a stacked structure below a pixel electrode in the first embodiment.

FIG. 4 is a process chart sequentially showing a manufacturing process for forming irregularities on the surfaces of a second conductive layer and a filling insulating layer in the first embodiment.

FIG. 5 is a schematic cross-sectional view schematically showing a problem due to multiple reflection that may occur depending on a use situation in the first embodiment.

FIG. 6 is a sectional view of a liquid crystal device which is a second embodiment of the electro-optical device according to the invention.

FIG. 7 is a process chart sequentially showing a manufacturing process for forming irregularities on the surface of a holed insulating layer and a hole-filled insulating layer in the second embodiment.

FIG. 8 is a process chart sequentially showing a manufacturing process for forming irregularities on the surfaces of a perforated insulating layer and a filled insulating layer in a liquid crystal device according to a third embodiment of the electro-optical device of the present invention.

FIG. 9 is a sectional view of a liquid crystal device which is a fourth embodiment of the electro-optical device according to the invention.

FIG. 10 is a sectional view of a liquid crystal device which is a fifth embodiment of the electro-optical device according to the invention.

FIG. 11 is a sectional view of a liquid crystal device which is a sixth embodiment of the electro-optical device according to the invention.

FIG. 12 is a plan view of an element substrate in each embodiment together with components formed thereon viewed from a counter substrate side.

13 is a sectional view taken along the line H-H 'of FIG.

FIG. 14 is a cross-sectional view of a laminated structure under a pixel electrode for forming irregularities on the surface of the pixel electrode in one prior application filed by the present applicant.

FIG. 15 is a cross-sectional view of a laminated structure under a pixel electrode for forming irregularities on the surface of the pixel electrode in another prior application filed by the present applicant.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Well area 3 ... Field oxide film 5 ... Gate electrode 7 ... First interlayer insulating film 8a, 8b ... 1st conductive layer 9 ... 2nd interlayer insulating film 10 ... 2nd conductive layer 10a ... Hole 11a, 11b ... Third interlayer insulating film 11c Filling insulating layer 11h Contact hole 12 Connection plug 13 Pixel electrode 13a Depression 20 Counter substrate 23 Light shielding film 30 FET 30 ′ TFT 43a Scanning line 43b Capacitance line 46a ... data line 50 ... liquid crystal layer 52 ... sealing material 70 ... storage capacitor 81 ... perforated insulating layer 81a ... hole 81b ... inclined portion 101 ... data line driving circuit 104 ... scanning line driving circuit

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H091 FA14Y FA31Y FA35Y FB08 FC15 FD04 GA02 GA07 GA13 LA03 LA12 LA19 MA07 2H092 GA17 HA05 JA23 JA25 JA26 JA46 JB07 JB52 JB56 KB14 KB25 MA07 MA18 MA27 MA37 NA01 NA27 PA06 PA09 PA10 PA12

Claims (13)

[Claims] An electro-optical material is sandwiched between a pair of substrates, and one of the pair of substrates includes a wiring and a reflective film for supplying an electric force for driving the electro-optical material. A pixel electrode, an uneven layer interposed between the pixel electrode and the one substrate and having a large number of unevennesses formed on the surface, and filling the recesses in the unevenness layer and defining the periphery of the recesses. CMP (Chemical Mecha)
An electro-optical device, comprising: a CMP layer that has been subjected to a CMP treatment and a surface of which the CMP treatment has been performed is recessed from the convex portion. 2. The electro-optical device according to claim 1, wherein the concavo-convex layer includes a single layer having a large number of holes. 3. The electric device according to claim 1, wherein the uneven layer is formed of a conductive film, and the CMP layer is formed of a film that is more easily polished by the CMP process than the conductive film. Optical device. 4. The conductive film is made of a metal film containing at least one of aluminum, titanium and tantalum, and the CMP layer is made of one of a silicon nitride film and a silicon oxide film. The electro-optical device according to claim 3, wherein 5. The electro-optical device according to claim 3, wherein the conductive film forms a relay layer for transmitting the electric force to the pixel electrode. 6. The electric device according to claim 1, wherein the uneven layer is made of an insulating film, and the CMP layer is made of a film which is more easily polished by the CMP process than the insulating film. Optical device. 7. The electro-optical device according to claim 6, wherein the CMP layer is made of one of a silicon nitride film and a silicon oxide film. 8. The method according to claim 1, further comprising: transmitting said electric force to said pixel electrode between said one substrate and said first insulating film;
And a conductive layer for preventing intrusion of moisture through at least one of the second insulating film and the second insulating film.
Or the electro-optical device according to 7. 9. The electro-optical device according to claim 8, wherein the conductive layer is made of a light-shielding film and includes a portion that closes a gap between the pixel electrodes adjacent to each other when viewed from the side of the counter substrate. apparatus. 10. The method according to claim 1, wherein the uneven layer is formed of a light-shielding film and includes a portion that closes a gap between the pixel electrodes adjacent to each other when viewed from the counter substrate. 2. The electro-optical device according to claim 1. 11. The uneven structure according to claim 1, wherein the convex portion is inclined toward the concave surface of the CMP layer around the concave portion. An electro-optical device according to claim 1. 12. The method of manufacturing an electro-optical device according to claim 1, wherein the step of forming the uneven layer on at least the one substrate on which the wiring is formed; Forming a material layer to be the CMP layer on the uneven layer, and, on the material layer, under the condition that the uneven layer is less likely to be chemically polished than the material layer, and after the convex portion is exposed, A step of performing the CMP process until the surface of the CMP layer that fills the concave portion is chemically polished by a predetermined amount, and a step of forming the pixel electrode from a reflective material above the uneven layer and the CMP layer. A method for manufacturing an electro-optical device, comprising: 13. The step of performing the CMP process,
13. The method of manufacturing an electro-optical device according to claim 12, wherein a selectivity of the CMP layer to the uneven layer in the chemical polishing is set to 1 or more and smaller than a predetermined value.