JP2001127024A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the semiconductor device for improving yield or reliability without generating peeling. SOLUTION: In this semiconductor device, a semiconductor element protecting film formed by applying and thermohardening semiconductor element protecting materials containing volatile solvent is formed on a semiconductor element surface, and the corner part of the semiconductor element protecting film is chamfered.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor device having an improved surface protective film and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor device, after a semiconductor element formed on a wafer is completely covered with, for example, a polyimide film as a surface protective film in order to prevent damage to the surface of the semiconductor element, as shown in FIG. In addition, patterning has been performed at a right angle without any particular consideration regarding the shape of the corner portion.

However, there have been problems such as peeling off from the corners in the subsequent steps.

[0004]

As described above, in the conventional semiconductor device, the corners of the surface protection film are separated from each other, so that the lapping process (the process of shaving the back surface of the wafer to a predetermined thickness) is not uniform. In the assembling process, there has been a problem that the peeled portion is damaged by the mold resin. In addition, since it also has a role of preventing radiation (α rays), the peeling has been one of the causes of device destruction due to radiation.

Accordingly, the present invention is to provide a semiconductor device which eliminates the drawbacks of the conventional semiconductor device, does not peel off the surface protective film, can improve the yield and the reliability, and a method of manufacturing the same. It is intended for.

[0006]

According to the present invention, there is provided a semiconductor device comprising:
A semiconductor element surface is provided with a semiconductor element protective film formed by applying and thermally curing a semiconductor element protective material containing a volatile solvent, and a corner portion of the semiconductor element protective film is chamfered. .

Further, in the semiconductor device according to the present invention, the chamfer angle is not less than 115 ° and not more than 155 °.

According to a method of manufacturing a semiconductor device of the present invention, a surface of a plurality of semiconductor elements formed on a semiconductor substrate is covered with a semiconductor element protective material containing a volatile solvent, and a corner is chamfered for each semiconductor element. Patterning in the shape
Forming a semiconductor element protection film on the surface of each of the semiconductor elements.

Further, in the method of manufacturing a semiconductor device according to the present invention, the corner portion is chamfered at an angle of 115 ° or more and 15 ° or more.
It is characterized by chamfering at an angle of 5 ° or less.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to FIGS.

As shown in FIG. 1, a photosensitive polyimide material is applied on the entire surface of a semiconductor element 2 arranged on a wafer 1 as a semiconductor element protection material. NMP (N-
Methyl-2-pyrrolidone) is used.

[0012] As shown in FIG.
Patterning is performed by performing exposure and development using a mask pattern of 35 ° to form a semiconductor element protection film 3. Here, the chamfer angle 4 is represented by an inner angle of a corner portion on the outer periphery 5 of the semiconductor element protective film 3. Next, when this is heat-treated and the polyimide material is thermally cured, the pattern is completed in a curved manner as shown in FIG. 3 due to expansion and contraction. here,
6 is a dicing line.

At this time, since the volatile solvent remaining in the formed semiconductor element protective film escapes into the air, shrinkage occurs. FIGS. 4 and 5 show schematic diagrams at this time. here,
FIG. 4 is a top view and FIG. 5 is a sectional view. Here, 7 indicates the contracting force of the polyimide. In FIG. 4, since the contraction directions at the corners are dispersed, as shown in FIG.
The contraction force at the periphery is small, and a stress large enough to cause film peeling does not occur. FIGS. 6 and 7 are schematic views of a conventional pattern. Since the contraction directions are two directions and are concentrated at the corners, a large contraction force acts in the 45 ° direction, and a stress causing film peeling is generated. As shown in FIG. 7, since the contraction force is larger at the surface portion not in contact with the lower layer film, the stress 8 that causes the film to peel is large in the upper left direction.

As described above, in the present embodiment, it can be seen that the stress concentration at the corners is reduced as compared with the conventional pattern.

Further, a test is performed on the conventional pattern and the pattern of the present embodiment in accordance with an actual process. First, a Si nitride film was overlaid on a Si oxide film
A passivation film having a two-layer structure is formed. On this, a semiconductor element protection film made of a polyimide film is formed in each pattern as in the present embodiment, and the passivation film is patterned by continuous etching of CDE and Wet using these as masks. In this test condition, among the processes to be actually exposed, those having a tendency to cause peeling of the polyimide were selected.

In the semiconductor element protective film thus formed, peeling of the conventional device is observed at 28 samples / 28 samples = 100%, but in the present embodiment, 0 samples / 82 samples = 0%,
It can be seen that it is greatly improved. By alleviating the stress concentration in this manner, the occurrence of peeling is suppressed, and a semiconductor element protective film with high yield and high reliability can be formed.

In this embodiment, all the chamfer angles are set to 135 °. However, all the chamfer angles need not be equal, but may be larger than 90 ° and smaller than 180 °. More preferably, it is near 135 °, and 115
以上 ° to 155 °.

Further, in the present embodiment, the chamfering is performed with a straight line, but the same or more effect can be obtained by chamfering with a curved line.

Further, in this embodiment, a photosensitive polyimide material is used, but a non-photosensitive polyimide material may be used. Further, in this embodiment, the heat treatment is performed after the semiconductor element protective material is patterned, but the patterning may be performed after the heat treatment. Even in such a case, since the peeling stress is generated by the residual solvent, it is as effective as the present embodiment.

After the semiconductor element protective film is formed in this manner, lapping and dicing are performed, and a semiconductor device is formed through an assembling process.

[0021]

According to the present invention, it is possible to provide a semiconductor device capable of improving yield and reliability without delamination and a method of manufacturing the same.

[Brief description of the drawings]

FIG. 1 is a view showing a semiconductor element formed on a wafer.

FIG. 2 is a diagram showing a corner portion of a chamfered semiconductor element protective film.

FIG. 3 is a diagram showing a corner portion of a semiconductor element protective film after heat treatment.

FIG. 4 is a schematic diagram (top view) of a corner portion of the semiconductor element protective film of the present invention.

FIG. 5 is a schematic diagram (cross-sectional view) of a corner portion of the semiconductor element protective film of the present invention.

FIG. 6 is a schematic view (top view) of a corner portion of a conventional semiconductor element protection film.

FIG. 7 is a schematic view (cross-sectional view) of a corner portion of a conventional semiconductor element protection film.

FIG. 8 is a diagram showing a corner portion of a conventional semiconductor element protection film.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wafer 2 Semiconductor element 3 Semiconductor element protective film 4 Chamfer angle 5 Peripheral of semiconductor element protective film 6 Dicing line 7 Shrinking force of polyimide 8 Stress causing film peeling

Claims (4)

[Claims] 1. A semiconductor element protective film formed by applying and thermally curing a semiconductor element protective material containing a volatile solvent on a surface of a semiconductor element, wherein a corner portion of the semiconductor element protective film is chamfered. A semiconductor device characterized by the above-mentioned. 2. The chamfer angle is at least 115 ° and 155 °.
2. The semiconductor device according to claim 1, wherein: 3. The surface of a plurality of semiconductor elements formed on a semiconductor substrate is covered with a semiconductor element protection material containing a volatile solvent, and patterning is performed in such a manner that a corner is chamfered for each semiconductor element. A method for manufacturing a semiconductor device, comprising a step of forming a semiconductor element protective film on a surface of each semiconductor element. 4. The method according to claim 3, wherein the corner portion is chamfered at a chamfer angle of 115 ° or more and 155 ° or less.
The manufacturing method of the semiconductor device described in the above.