JP2001118871A - Bump-forming device and forming method of bump - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a bump-forming device of a structure, where when bumps are formed on a semiconductor wafer, a breakage in a circuit due to pyroelectric effect, which is caused by an abrupt change in the temperature of the wafer during a transfer of the wafer, cracks in the wafer due to a thermal deformation of the wafer and the like can be prevented from being generated, and to provide a forming method of the bumps. SOLUTION: A bump-forming device is constituted in such a structure that a semiconductor wafer 1 is heated or cooled along with a tray 10 for transfer in a state that the wafer is mounted on the tray 10 and the wafer is transferred by a transfer device, whereby an abrupt temperature change in the wafer 1 is made to relax and a mechanical load which is applied to the wafer 1 is reduced, by making an engaging means of the transfer device engage with the tray 10 and by making the engaging means separate from the tray 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a bump forming apparatus and a bump forming method for forming a bump on a semiconductor wafer.

[0002]

2. Description of the Related Art In recent years, the size of a device to which an electronic component is attached, such as a mobile phone, has been extremely reduced, and the size of the electronic component has also been reduced. Accordingly, the semiconductor chips constituting the electronic components have also been reduced in size. However, when forming bumps on the semiconductor chips, it is difficult to handle the semiconductor chips with small pieces, and the productivity does not increase.

In order to cope with this, instead of forming bumps on semiconductor chips cut out from a semiconductor wafer, individual circuit forming portions formed on the semiconductor wafer are not cut out from the semiconductor wafer without cutting out the semiconductor wafer. It has been proposed to form a bump on an electrode portion in each of the above circuit forming portions, and a bump forming apparatus of this kind already exists.

The bump forming apparatus includes a first storage container for storing a semiconductor wafer before bump formation (referred to as a wafer before bump formation), a carry-in device for removing the wafer before bump formation from the first storage container, In order to form bumps on the electrode portions on the wafer before formation, a bonding stage in which the wafer before bump formation is placed and heated usually from about 250 ° C. to 270 ° C., and a semiconductor wafer on which bumps are formed (wafer after bump formation) ), An unloading device for unloading and storing a wafer after bump formation into the second storage container, an operation of transferring a wafer before bump formation from the loading device to the bonding stage, and And a transfer device for performing an operation of transferring the wafer from the bonding stage to the unloading device after the bumps are formed.

[0005] The SAW (Surf) used for the above-mentioned mobile phones and the like is used.
As in the case of a semiconductor wafer forming an ace acoustic wave filter, its base may be quartz instead of conventional silicon, or a so-called compound semiconductor such as lithium tantalate, lithium niobate, and gallium arsenide. (Such a semiconductor wafer is hereinafter referred to as a compound semiconductor wafer). Even in such a compound semiconductor wafer, when forming bumps, the maximum temperature is 2 ° C.
Although it is necessary to heat to about 00 ° C., compound semiconductor wafers are more vulnerable to rapid temperature changes than silicon wafers,
If heating and cooling are not performed slowly, a pyroelectric effect may occur to cause circuit destruction, or the wafer may crack due to thermal deformation of the wafer. Therefore, a bump forming apparatus that handles such a compound semiconductor wafer includes a preheat stage for gradually heating the wafer before bump formation to the temperature of the bonding stage, and an after-heat for gradually cooling the wafer to room temperature after bump formation. A cooling stage is provided for heating the wafer before bump formation and cooling the wafer after bump formation.

[0006]

However, in this type of conventional bump forming apparatus, the wafer before bump formation is bonded from the preheat stage while the outer peripheral portion of the wafer is held by the holding chuck provided in the transfer apparatus. The wafer has been transferred to a stage or the wafer has been transferred from a bonding stage to an after-cooling stage after bump formation.

Therefore, when performing bonding to a compound semiconductor wafer, the compound semiconductor wafer is lifted from each of the above-mentioned stages, and while the compound semiconductor wafer is moved to the next stage in the air, a sharp decrease in the wafer temperature occurs.
When the wafer is re-mounted on each of the above stages, a sharp rise in the wafer temperature may cause a pyroelectric effect on the wafer, causing circuit breakage, or thermal deformation of the compound semiconductor wafer to cause wafer cracking. I was

Further, since the compound semiconductor wafer has a lower mechanical strength than a conventional silicon wafer, when the wafer is clamped by the clamping chuck of the transfer device at the time of transferring the wafer, the mechanical force applied to the compound semiconductor wafer is reduced. The load caused cracking and chipping of the compound semiconductor wafer. The present invention solves the above-described problems, and when forming bumps on a semiconductor wafer, circuit breakage due to a pyroelectric effect caused by a rapid change in wafer temperature during wafer transfer, and wafer cracking due to thermal deformation of the wafer, and An object of the present invention is to provide a bump forming apparatus and a bump forming method capable of preventing chipping and cracking of a wafer caused by holding the wafer during wafer transfer.

[0009]

SUMMARY OF THE INVENTION In order to solve this problem, the present invention relates to a bump forming apparatus for forming bumps on electrodes of a circuit formed on a semiconductor wafer. The semiconductor device is provided with relaxation protection means for mitigating a sudden temperature change and reducing a mechanical load applied to the semiconductor wafer.

Thus, when bumps are formed on a semiconductor wafer, circuit breakage due to a pyroelectric effect caused by a rapid change in wafer temperature during wafer transfer, wafer cracking due to thermal deformation of the wafer, and wafer breakage during wafer transfer. Chipping and cracking of the wafer caused by the clamping can be prevented.

[0011]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a bump forming apparatus for forming a bump on an electrode of a circuit formed on a semiconductor wafer according to a first embodiment of the present invention. The semiconductor device is provided with a relaxation protection means for relaxing and reducing a mechanical load applied to the semiconductor wafer.

According to a second aspect of the present invention, in the bump forming apparatus of the first aspect, the mitigation protection means is a transfer tray on which the semiconductor wafer is mounted, and the semiconductor wafer is transferred with the semiconductor wafer mounted on the transfer tray. Heating or cooling together with the tray for transfer, alleviates the sudden temperature change of the semiconductor wafer by transferring, and disengages the engaging means of the transfer device from the transfer tray, thereby reducing the mechanical load applied to the semiconductor wafer. It is configured so as to reduce it.

According to a third aspect of the present invention, in the bump forming apparatus of the second aspect, the transfer tray is provided with a suction hole for both vacuum suction of the semiconductor wafer and vacuum suction of the transfer tray. The above bonding is performed in a state where the semiconductor wafer is placed on the tray and sucked. The invention according to claim 4 is the invention according to claim 2.
In the bump forming apparatus described in Item 3, the engaging portion for positioning the semiconductor wafer in contact with the positioning reference shape portion of the semiconductor wafer on the transfer tray, and pressing the semiconductor wafer toward the engaging portion. A pressing means is provided, and when the semiconductor wafer is placed on the transport tray, the semiconductor wafer is sandwiched by the engaging portion and the pressing means.

According to a fifth aspect of the present invention, there is provided a bump forming method for forming a bump on an electrode of a circuit formed on a semiconductor wafer, wherein a sudden temperature change of the semiconductor wafer is reduced.
And while reducing the mechanical load applied to the semiconductor wafer,
The semiconductor wafer is transported. Claim 6
According to a fifth aspect of the present invention, in the bump forming method according to the fifth aspect, the semiconductor wafer is heated or cooled together with the transfer tray in a state where the semiconductor wafer is mounted on the transfer tray, and the semiconductor wafer is transferred to reduce a sudden change in temperature of the semiconductor wafer. In addition, the mechanical load applied to the semiconductor wafer is reduced by disengaging the engaging means of the transfer device with respect to the transfer tray.

The invention according to claim 7 is the invention according to claim 5 or 6.
Wherein the transfer tray and the semiconductor wafer are sucked on the bonding stage from the suction holes provided on the transfer tray for vacuum suction of the semiconductor wafer, and for the vacuum suction of the transfer tray. Is used for bonding. According to the first and fifth aspects of the present invention, a rapid change in the temperature of the semiconductor wafer when the semiconductor wafer is transported is reduced, and the mechanical load applied to the semiconductor wafer is reduced. Therefore, it is possible to prevent circuit breakage due to the pyroelectric effect, wafer cracking due to thermal deformation of the wafer, and chipping or cracking of the wafer.

According to the second and sixth aspects of the present invention, it is possible to reduce a sudden change in temperature of a semiconductor wafer by a relatively simple configuration and method of placing a semiconductor wafer on a transfer tray. Thus, the mechanical load applied to the semiconductor wafer can be reduced. According to the invention described in claim 3 and the invention described in claim 7, the bump formation on the semiconductor wafer on the bonding stage is performed by:
The semiconductor wafer can be satisfactorily performed in a stable posture with the semiconductor wafer placed on the transfer tray and adsorbed on the bonding stage. In other words, if only the semiconductor wafer is placed on the bonding stage, the semiconductor wafer placed on the transfer tray is removed from the transfer tray and placed on the bonding stage. Work to reload the semiconductor wafer from the bonding stage to the transfer tray is required, and when performing these movement work, a sudden temperature change of the semiconductor wafer occurs and a mechanical load is applied to the semiconductor wafer. However, according to the present invention, the transfer operation is not required, and it is possible to prevent a sudden change in temperature of the semiconductor wafer and a mechanical load on the semiconductor wafer.

According to the fourth aspect of the present invention, when the semiconductor wafer is placed on the transfer tray, the engaging portion of the transfer tray is brought into contact with the positioning reference shape portion of the semiconductor wafer. Since the semiconductor wafer is positioned by the engaging portion and the pressing means, the semiconductor wafer is prevented from being displaced during the transfer of the tray, and the position and posture of the semiconductor wafer with respect to the bonding stage when the transfer tray is loaded into the bonding stage. Can be suppressed from varying for each carry-in. This means that the amount of change in the position of the circuit on the semiconductor wafer with respect to the bonding stage is suppressed, and an image recognition error of the circuit on the semiconductor wafer at the start of bonding can be suppressed.

FIG. 1 shows an embodiment of the present invention.
This will be described with reference to FIG. A bump forming apparatus according to an embodiment of the present invention and a bump forming method executed by the bump forming apparatus will be described below with reference to the drawings. The bump forming apparatus 100 of the present embodiment shown in FIG. 1 is used for processing a compound semiconductor wafer 1 whose base is a crystal or a so-called compound semiconductor such as lithium tantalate, lithium niobate, and gallium arsenide. It is particularly suitable, and the case where bumps are formed on the compound semiconductor wafer 1 will be described as an example in the following description, but the processing target is limited to such a compound semiconductor wafer 1 (hereinafter simply referred to as “wafer 1”). However, if it is a conventional silicon wafer, it can of course be processed.

Further, the bump forming apparatus 100 includes a first storage container in which a transfer tray 10 on which a wafer 1 before bump formation (hereinafter, simply referred to as “wafer 1A before bump formation”) is vertically stored in layers. 21, a second storage container 22 that vertically and layerwise stores the transport tray 10 on which the wafer 1 after bump formation (hereinafter simply referred to as “wafer 1B before bump formation”) is placed. Although both magazine types are used, the present invention is not limited to this type, and the transfer tray 10 on which the wafer 1A before bump formation is mounted and the transfer tray 10 on which the wafer 1B before bump formation is mounted in one storage container. A so-called single magazine type for storing can also be configured.

The basic configuration of the bump forming apparatus 100 is not much different from the conventional bump forming apparatus. That is, the bump forming apparatus 100 is roughly divided into one bonding stage 30, one bump forming head 40, one loading device 50, and one unloading device 60.
And one transfer device 70, and lifting devices 81 and 82 provided for the storage devices 21 and 22 to lift and lower the storage containers 21 and 22, respectively. In addition, as will be described later in the description of the operation, especially when the wafer 1 is heated to the bonding temperature, the loading device 50 and the unloading device 50 can be controlled so that the above-described wafer cracking or the like can be controlled. The apparatus 60 includes a preheat stage 51 and an aftercooling stage 6 respectively.
1, a preheating stage 51, an aftercooling stage 61, and a separately provided control device 90.
Thus, a preheat aftercooling device is configured. However, unlike the conventional bump forming apparatus, in the bump forming apparatus 100, the wafer 1 is stored, transferred, and positioned while being placed on the transfer tray 10.

Hereinafter, each of the above components will be described. The bonding stage 30 places the wafer 1A before the bump formation and the wafer 1A before the bump formation.
It has a function of heating the pre-bump forming wafer 1A to a bump bonding temperature necessary for forming a bump on an electrode in a circuit formed thereon. The bonding stage 30 is provided with a suction hole (not shown) for sucking the transfer tray 10 on which the wafer 1 is placed.

The bump forming head 40 is a known device for forming bumps on the electrodes of the wafer 1A before bump formation, which is placed on the bonding stage 30 and heated to the temperature for bump bonding, and is made of gold as a material for the bumps. In addition to the wire supply unit 121 for supplying a wire, a bump forming unit for forming a ball by melting the gold wire and pressing the molten ball against an electrode, and generating ultrasonic waves for applying an ultrasonic wave to the bump when the molten ball is pressed. And other parts. The bump forming head 40 configured as described above is mounted on an XY table 42 having a ball screw structure and movable in X and Y directions orthogonal to each other on a plane. Then, the wafer 1A before bump formation fixed at a predetermined position is formed.
Are moved in the X and Y directions by the XY table 42 so that bumps can be formed on the respective electrodes.

The carry-in device 50 moves from the first storage container 21
Transfer tray 10 on which wafer 1A before bump formation is placed
The unloading device 60 is a device that unloads the transfer tray 10 on which the wafer 1B has been placed after bump formation to the second storage container 22 and stores it. See Figure 2 for details.
As shown in the figure, the carry-in device 50 and the carry-out device 60 are provided on the same straight line along the X direction, and are independently provided in the X direction by air cylinders (only the evacuation and retraction rods of the air cylinder are shown) 52, 62. Go to As shown in FIG. 1, a bonding stage 30 is disposed between the loading device 50 and the unloading device 60, and the
0 moves between the first storage container 21 and the bonding stage 30, and the unloading device 60 moves the bonding stage 30.
And the second storage container 22.

As shown in FIG. 2, the carry-in device 50 has a preheat stage 51 attached to a support member 53,
The transfer tray 10 on which the wafer 1A before bump formation is mounted can be mounted on the preheat stage 51. A plurality of suction holes 54 for holding the transfer tray 10 by suction are provided on the upper surface of the preheat stage 51.
Further, a cartridge heater 55 whose temperature is controlled by the control device 90 is mounted on the preheat stage 51, and the heating of the wafer 1A before bump formation on the transfer tray 10 mounted on the preheat stage 51 is gently performed. It can be carried out. The loading device 50 thus configured is movable by the movable mounting portion 52a of the air cylinder 52 to a position corresponding to the wafer 1A before bump formation in the first storage container 21. The first storage container 21 is supported by an elevating device 81 so as to be able to move up and down. The elevating device 81 is arranged at a height at which the transfer tray 10 on which the wafer 1A before bump formation is mounted can be taken out by the loading device 50. The first storage container 21 is moved up and down as described above. Further, the transfer tray 10 taken out of the first storage container 21 by the loading device 50 is
After the completion of the preheating in step (1), the sheet is sandwiched and transferred by the transfer device 70.

The unloading device 60 has an after-cooling stage 61 attached to a support member 63. On the after-cooling stage 61, the transfer tray 10 on which the wafer 1B is mounted after bump formation is transferred by the transfer device 70. Is placed. On the upper surface of the after cooling stage 61, a plurality of suction holes 64 for holding the transfer tray 10 by suction are provided. The aftercooling stage 61 is provided with a cartridge heater 65 whose temperature is controlled by the controller 90. The cartridge heater 65 controls the cooling of the wafer 1B after the bumps are formed on the transfer tray 10 mounted on the aftercooling stage 61. Can be done slowly. The unloading device 6 configured as described above
Numeral 0 is movable by the movable mounting portion 62a of the air cylinder 62 to the tray storage position in the second storage container 22. The second storage container 22 is supported by a lifting device 82 so as to be able to move up and down. Before moving the unloading device 60, the second storage container 22 is moved up and down by the lifting device 82, and the wafer 1B is placed after bump formation. The transport tray 10 is moved up and down to a height suitable for storage.

The transfer device 70 is used for the wafer 1A before bump formation.
Is transferred from the loading device 50 to the bonding stage 30, and the transfer tray 10 on which the wafer 1 </ b> B after bump formation is mounted is transferred from the bonding stage 30 to the unloading device 60. is there. As shown in FIG. 3, the transfer device 70 includes, in the present embodiment, one holding unit 71 that holds the transport tray 10,
A driving unit 73 having a ball screw structure for moving the holding unit 71 in the X direction and driven by a motor 72, and a moving unit 74 for moving the holding unit 71 up and down in the thickness direction of the held transport tray 10; It has. The holding unit 71 transfers the transfer tray 10 between the bonding stage 30, the loading device 50, and the unloading device 60.

The holding section 71 includes a pair of clamp members 75A and 75B for holding the transport tray 10 on the plane of the transport tray 10, and a pair of clamp members 75A and 75B.
And a drive mechanism 76 for performing the approach and separation of 5B. These clamp members 75A and 75B
Two sets of clamp mechanisms 77 are provided at positions facing each other between A and 75B. This clamp mechanism 77
As shown in FIG. 4, a housing 78 penetrates through the clamp members 75A and 75B in the thickness direction, a pin 79 slidable in the housing 78 in the axial direction, and a rotation about the axis of the pin 79. A clamp roller 85 having a flange portion 85a attached to the end of the pin 79 in a free state to prevent the transfer tray 10 from dropping;
And a spring 86 provided in the housing 78 to urge the pin 79 downward. Such clamp mechanisms 77 are arranged at four places along the periphery of the transport tray 10 sandwiched by the clamp members 75A and 75B,
As a result, the clamp roller 85 holds the transport tray 10 at the four positions.

As shown in FIG. 5, the transfer tray 10 suctions and holds the wafer 1 at the same position as the suction holes provided on the bonding stage 30 and at the same position as the suction holes on the bonding stage 30. A plurality of suction holes 13 having both functions of suction and holding of the transfer tray 10 are provided, and bump formation on the wafer 1A before bump formation on the bonding stage 30 is performed by the wafer 1 before bump formation.
A can be carried out while being placed on the transport tray 10. The transfer tray 10 has a plurality of positioning pins 11 as an engaging portion for positioning the wafer 1 by abutting on an original flat (so-called orientation flat) as a reference shape portion for positioning the wafer 1. Spring 1 as a pressing means for pressing the plate toward the positioning pin 11 side
2 are provided, and when the wafer 1 is placed on the transfer tray 10, the wafer 1 is moved by the positioning pins 11 and the leaf springs 12.
3 so as to be reliably positioned.

The operation of the bump forming apparatus 100 will be described below. As shown in FIG. 7, in step S1,
The first storage container 21 is moved up and down by the elevating device 81 so that the transport tray 10 on which the wafer 1A before bump formation is placed is in the first state.
The height is set so as to be removable from the storage container 21 by the loading device 50. Then, the carry-in device 50 is moved into the first storage container 21, and the first storage container 21 is moved by the elevating device 81 to such an extent that the stored transfer tray 10 is lifted up from the supporting flange in the first storage container 21. Descend,
The transport tray 10 is sucked and held by suction holes 54 provided on the upper surface of the preheat stage 51 constituting the loading device 50, and the transport tray 10 is taken out of the first storage container 21.

In the next step S2, the transfer tray 10 on which the pre-bump-formed wafer 1A is placed is placed on the preheat stage 51, and a gradual temperature rise rate is applied to the pre-bump-formed wafer 1A so that the above-described circuit breakdown and wafer cracking do not occur. Is heated to the bonding temperature. In the next step S3, the transfer tray 10 and the wafer 1A before bump formation that have been heated are transferred onto the bonding stage 30 by the transfer device 70. Then, the next step S
At 4, the bumps are sequentially formed on the wafer 1 by the bump formation heads 40 while moving the bump formation heads 40 to the respective bump formation locations on the XY table 42, similarly to the conventional bump formation apparatus. To go.

After forming all necessary bumps,
In step S5, the transfer device 70 transfers the entire transfer tray 10 from the bonding stage 30 to the after-cooling stage 61 constituting the unloading device 60.
In step S6, the transfer tray 10 and the bump-formed wafer 1B transferred onto the after-cooling stage 61 are subjected to the temperature control of the after-cooling stage 61 by the control device 90, so that the circuit breakage and the wafer Cool to room temperature at a gradual rate of temperature drop without cracking.

In step S7, the second storage container 22 is moved up and down by the elevating device 82 so that the wafer 1B
Is set to a height that allows the transfer tray 10 on which is loaded from the unloading device 70 to be stored in the second storage container 22. And
The unloading device 70 is moved into the second storage container 22, and the cooled transfer tray 10 and the transfer tray 10
The wafer 1 </ b> B after the bump formed thereon is stored in the second storage container 22.

As described above, the wafer 1 is transferred to the transfer tray 10.
While being placed on the preheating stage 51, the preheating stage 51 gradually heats the preheating stage 51, gradually cools the aftercooling stage 61, and further heats the preheating stage 51.
From the bonding stage 30 to the after-cooling stage 6.
Since the wafer is transferred to 1, not only during heating and cooling, but also during the wafer transfer, a sudden change in the wafer temperature causes circuit breakage due to the pyroelectric effect, thermal deformation of the wafer, wafer cracking, and wafer transfer during wafer transfer. Chipping and cracking of the wafer caused by the pinching can be favorably prevented.

The formation of bumps on the wafer 1 on the bonding stage 30 is performed by transferring the wafer 1 to the transfer tray 10.
And the bonding stage 30
It is possible to perform the transfer operation from the preheat stage 51 to the bonding stage 30 and the transfer operation from the bonding stage 30 to the after-cooling stage 61 efficiently, since it can be satisfactorily performed in a stable state by being attracted to the upper side. Can be.

Further, since the wafer 1 can be favorably positioned on the transfer tray 10, the wafer 1 is prevented from being shifted during transfer, and the bonding stage 3 when the transfer tray 10 is loaded into the bonding stage 30.
The position and orientation of the wafer 1 with respect to 0 can be suppressed from changing every time the wafer 1 is loaded. In the above description, the flow of bump formation for one wafer 1 was sequentially followed. However, as an actual operation, each operation of preheating, bump formation, and after-cooling is performed in parallel.

[0036]

As described above, according to the present invention, the sudden temperature change of the semiconductor wafer during the transfer of the semiconductor wafer is reduced, and the mechanical load applied to the semiconductor wafer is reduced. However, circuit breakage due to the pyroelectric effect, wafer cracking due to thermal deformation of the wafer, and chipping or cracking of the wafer can be prevented.

In addition, by heating or cooling the semiconductor wafer together with the transfer tray in a state where the semiconductor wafer is mounted on the transfer tray and transferring the semiconductor wafer, the semiconductor wafer can be manufactured with a relatively simple configuration and method.
It is possible to alleviate a sudden change in temperature of the semiconductor wafer and reduce a mechanical load applied to the semiconductor wafer without significantly increasing equipment costs. Further, by performing the bonding operation on the bonding stage while the semiconductor wafer is placed on the transfer tray and sucked, the semiconductor wafer can be favorably positioned on the transfer tray. Can be prevented, and the position and orientation of the semiconductor wafer with respect to the bonding stage when the transfer tray is carried into the bonding stage can be prevented from changing every time the carry-in tray is carried in.

Further, the transfer tray is provided with an engaging portion for abutting the positioning reference shape portion of the semiconductor wafer for positioning, and pressing means for pressing the semiconductor wafer toward the engaging portion. When the semiconductor wafer is placed on the transfer tray, the semiconductor wafer can be sandwiched and positioned by the engaging portion and the pressing means when the semiconductor wafer is placed on the transfer tray. The position and orientation of the semiconductor wafer with respect to the bonding stage when the loading tray is loaded into the bonding stage can be suppressed from varying with each loading, and as a result,
The amount of change in the position of the circuit on the semiconductor wafer with respect to the bonding stage can be suppressed, and image recognition errors of the circuit on the semiconductor wafer at the start of bonding can be suppressed.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a bump forming apparatus according to an embodiment of the present invention.

FIG. 2 is a perspective view showing a carry-in device and a carry-out device of the bump forming device.

FIG. 3 is a perspective view showing a transfer device of the bump forming device.

FIG. 4 is a sectional view of a clamp mechanism of the bump forming apparatus.

FIG. 5 is a plan view of a transfer tray of the bump forming apparatus.

FIG. 6 is a flowchart illustrating a bump forming method according to the embodiment of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 compound semiconductor wafer 10 transfer tray 21 first storage container 22 second storage container 30 bonding stage 40 bump forming head 50 loading device (transport device) 60 unloading device (transport device) 70 transfer device (transport device) 81, 82 Lifting device 51 Preheating stage 61 After cooling stage 90 Control device 100 Bump forming device

Continued on the front page (72) Inventor Takahiro Yonezawa 1006 Kadoma Kadoma, Osaka Pref. Matsushita Electric Industrial Co., Ltd. Inventor Tatsuo Sasaoka 1006 Kazuma Kadoma, Kadoma-shi, Osaka Matsushita Electric Industrial Co., Ltd. F-term (reference) 5F031 CA02 DA13 FA01 FA03 GA06 GA10 GA24 GA37 MA21 MA35

Claims (7)

[Claims] 1. A bump forming apparatus for forming a bump on an electrode of a circuit formed on a semiconductor wafer, wherein a sudden temperature change of the semiconductor wafer during transfer of the semiconductor wafer is reduced, and a mechanical force applied to the semiconductor wafer is reduced. A bump forming apparatus comprising a relaxation protection means for reducing a load. 2. The mitigation protection means is a transfer tray on which the semiconductor wafer is placed, and heats or cools the semiconductor wafer together with the transfer tray in a state where the semiconductor wafer is placed on the transfer tray.
Claims: A structure in which a sudden temperature change of a semiconductor wafer is mitigated by carrying, and a mechanical load applied to the semiconductor wafer is reduced by engaging and disengaging an engaging means of a carrying device with respect to a carrying tray. 2. The bump forming apparatus according to claim 1. 3. The transfer tray is provided with suction holes for both vacuum suction of the semiconductor wafer and vacuum suction of the transfer tray, and the bonding on the bonding stage is performed by mounting the semiconductor wafer on the tray and sucking the semiconductor wafer. The bump forming apparatus according to claim 2, wherein the apparatus is formed in a state where the bump is formed. 4. A transfer tray is provided with an engaging portion for abutting a positioning reference shape portion of a semiconductor wafer for positioning, and pressing means for pressing the semiconductor wafer toward the engaging portion. 4. The bump forming apparatus according to claim 2, wherein when the semiconductor wafer is placed on the transport tray, the semiconductor wafer is held between the engaging portion and the pressing means. 5. A bump forming method for forming a bump on an electrode of a circuit formed on a semiconductor wafer, wherein a sudden change in temperature of the semiconductor wafer is reduced and a mechanical load applied to the semiconductor wafer is reduced. And a method of forming a bump by transferring a semiconductor wafer. 6. A semiconductor wafer placed on a transfer tray is heated or cooled together with the transfer tray to transfer the semiconductor wafer, thereby alleviating a rapid change in temperature of the semiconductor wafer. 6. The bump forming method according to claim 5, wherein a mechanical load applied to the semiconductor wafer is reduced by disengaging the engaging means. 7. Bonding is performed in a state where the transfer tray and the semiconductor wafer are sucked on a bonding stage from suction holes provided on the transfer tray for vacuum suction of the semiconductor wafer and vacuum suction of the transfer tray on the bonding stage. The method according to claim 5, wherein the method is performed.