JP2001093672A - Substrate for organic electroluminescence display element and the display element - Google Patents
Substrate for organic electroluminescence display element and the display elementInfo
- Publication number
- JP2001093672A JP2001093672A JP26685599A JP26685599A JP2001093672A JP 2001093672 A JP2001093672 A JP 2001093672A JP 26685599 A JP26685599 A JP 26685599A JP 26685599 A JP26685599 A JP 26685599A JP 2001093672 A JP2001093672 A JP 2001093672A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- organic
- display element
- layer
- partition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 238000005401 electroluminescence Methods 0.000 title claims abstract description 7
- 239000010410 layer Substances 0.000 claims abstract description 50
- 238000005192 partition Methods 0.000 claims abstract description 47
- 239000012044 organic layer Substances 0.000 claims abstract description 28
- 230000010485 coping Effects 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000000926 separation method Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- -1 amino-substituted chalcone derivatives Chemical class 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 150000004866 oxadiazoles Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 2
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- RQGPLDBZHMVWCH-UHFFFAOYSA-N pyrrolo[3,2-b]pyrrole Chemical class C1=NC2=CC=NC2=C1 RQGPLDBZHMVWCH-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- YGLVWOUNCXBPJF-UHFFFAOYSA-N (2,3,4,5-tetraphenylcyclopenta-1,4-dien-1-yl)benzene Chemical compound C1=CC=CC=C1C1C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 YGLVWOUNCXBPJF-UHFFFAOYSA-N 0.000 description 1
- JCXLYAWYOTYWKM-UHFFFAOYSA-N (2,3,4-triphenylcyclopenta-1,3-dien-1-yl)benzene Chemical compound C1C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 JCXLYAWYOTYWKM-UHFFFAOYSA-N 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- VERMWGQSKPXSPZ-BUHFOSPRSA-N 1-[(e)-2-phenylethenyl]anthracene Chemical class C=1C=CC2=CC3=CC=CC=C3C=C2C=1\C=C\C1=CC=CC=C1 VERMWGQSKPXSPZ-BUHFOSPRSA-N 0.000 description 1
- XFYQEBBUVNLYBR-UHFFFAOYSA-N 12-phthaloperinone Chemical compound C1=CC(N2C(=O)C=3C(=CC=CC=3)C2=N2)=C3C2=CC=CC3=C1 XFYQEBBUVNLYBR-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- MVWPVABZQQJTPL-UHFFFAOYSA-N 2,3-diphenylcyclohexa-2,5-diene-1,4-dione Chemical class O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 MVWPVABZQQJTPL-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- CNGYZEMWVAWWOB-VAWYXSNFSA-N 5-[[4-anilino-6-[bis(2-hydroxyethyl)amino]-1,3,5-triazin-2-yl]amino]-2-[(e)-2-[4-[[4-anilino-6-[bis(2-hydroxyethyl)amino]-1,3,5-triazin-2-yl]amino]-2-sulfophenyl]ethenyl]benzenesulfonic acid Chemical compound N=1C(NC=2C=C(C(\C=C\C=3C(=CC(NC=4N=C(N=C(NC=5C=CC=CC=5)N=4)N(CCO)CCO)=CC=3)S(O)(=O)=O)=CC=2)S(O)(=O)=O)=NC(N(CCO)CCO)=NC=1NC1=CC=CC=C1 CNGYZEMWVAWWOB-VAWYXSNFSA-N 0.000 description 1
- OCIFJWVZZUDMRL-UHFFFAOYSA-N 6-hydroxyhexyl prop-2-enoate Chemical compound OCCCCCCOC(=O)C=C OCIFJWVZZUDMRL-UHFFFAOYSA-N 0.000 description 1
- ZHBOFZNNPZNWGB-UHFFFAOYSA-N 9,10-bis(phenylethynyl)anthracene Chemical compound C1=CC=CC=C1C#CC(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C#CC1=CC=CC=C1 ZHBOFZNNPZNWGB-UHFFFAOYSA-N 0.000 description 1
- ZYASLTYCYTYKFC-UHFFFAOYSA-N 9-methylidenefluorene Chemical class C1=CC=C2C(=C)C3=CC=CC=C3C2=C1 ZYASLTYCYTYKFC-UHFFFAOYSA-N 0.000 description 1
- 229910017073 AlLi Inorganic materials 0.000 description 1
- 101001074560 Arabidopsis thaliana Aquaporin PIP1-2 Proteins 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- OWYWGLHRNBIFJP-UHFFFAOYSA-N Ipazine Chemical compound CCN(CC)C1=NC(Cl)=NC(NC(C)C)=N1 OWYWGLHRNBIFJP-UHFFFAOYSA-N 0.000 description 1
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N N-phenyl amine Natural products NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- BEAHPPCNIBVQQD-SCICZZOKSA-N [Zn].C1([C@H](O)C[C@H](O)[C@H](O1)C)NC=1C=CC=C2C=CC=NC12.C1([C@H](O)C[C@H](O)[C@H](O1)C)NC=1C=CC=C2C=CC=NC12 Chemical compound [Zn].C1([C@H](O)C[C@H](O)[C@H](O1)C)NC=1C=CC=C2C=CC=NC12.C1([C@H](O)C[C@H](O)[C@H](O1)C)NC=1C=CC=C2C=CC=NC12 BEAHPPCNIBVQQD-SCICZZOKSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- WJNWGMBCKFIFDS-UHFFFAOYSA-K aluminum 4-methyl-5-(trifluoromethyl)quinolin-8-olate Chemical compound [Al+3].CC1=CC=NC2=C(C=CC(=C12)C(F)(F)F)[O-].CC1=CC=NC2=C(C=CC(=C12)C(F)(F)F)[O-].CC1=CC=NC2=C(C=CC(=C12)C(F)(F)F)[O-] WJNWGMBCKFIFDS-UHFFFAOYSA-K 0.000 description 1
- MGGWGZVGKDPGDJ-UHFFFAOYSA-K aluminum;5-chloroquinolin-8-olate Chemical compound C12=NC=CC=C2C(Cl)=CC=C1O[Al](OC=1C2=NC=CC=C2C(Cl)=CC=1)OC1=CC=C(Cl)C2=CC=CN=C12 MGGWGZVGKDPGDJ-UHFFFAOYSA-K 0.000 description 1
- ZTMLKTOWMABQKL-UHFFFAOYSA-K aluminum;5-cyano-4-methylquinolin-8-olate Chemical compound [Al+3].C1=CC(C#N)=C2C(C)=CC=NC2=C1[O-].C1=CC(C#N)=C2C(C)=CC=NC2=C1[O-].C1=CC(C#N)=C2C(C)=CC=NC2=C1[O-] ZTMLKTOWMABQKL-UHFFFAOYSA-K 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229940107816 ammonium iodide Drugs 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 150000008425 anthrones Chemical class 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical class C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000012018 catalyst precursor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- OPHUWKNKFYBPDR-UHFFFAOYSA-N copper lithium Chemical compound [Li].[Cu] OPHUWKNKFYBPDR-UHFFFAOYSA-N 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical class C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229940083761 high-ceiling diuretics pyrazolone derivative Drugs 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- FQHFBFXXYOQXMN-UHFFFAOYSA-M lithium;quinolin-8-olate Chemical compound [Li+].C1=CN=C2C([O-])=CC=CC2=C1 FQHFBFXXYOQXMN-UHFFFAOYSA-M 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- AODWRBPUCXIRKB-UHFFFAOYSA-N naphthalene perylene Chemical group C1=CC=CC2=CC=CC=C21.C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 AODWRBPUCXIRKB-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- 150000007978 oxazole derivatives Chemical class 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 150000004986 phenylenediamines Chemical class 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
- 229960001860 salicylate Drugs 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical compound C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- ADGHETHODYCQHQ-UHFFFAOYSA-K tris[(5,7-dichloroquinolin-8-yl)oxy]alumane Chemical compound C1=CN=C2C(O[Al](OC=3C4=NC=CC=C4C(Cl)=CC=3Cl)OC3=C4N=CC=CC4=C(Cl)C=C3Cl)=C(Cl)C=C(Cl)C2=C1 ADGHETHODYCQHQ-UHFFFAOYSA-K 0.000 description 1
- PODORNJIBXLRRS-UHFFFAOYSA-K tris[(5-fluoroquinolin-8-yl)oxy]alumane Chemical compound C12=NC=CC=C2C(F)=CC=C1O[Al](OC=1C2=NC=CC=C2C(F)=CC=1)OC1=CC=C(F)C2=CC=CN=C12 PODORNJIBXLRRS-UHFFFAOYSA-K 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、産業用、民生用と
して情報表示を行う有機エレクトロルミネッセンス表示
素子用基板および表示素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate for an organic electroluminescent display element and a display element for displaying information for industrial use and consumer use.
【0002】[0002]
【従来の技術】薄型軽量、高視野角、高速応答、自発光
型という特徴を有する有機エレクトロルミネッセンス
(以下有機EL)表示素子は、CRT(Cathod Ray Tub
e )やLCD(Liquid Crystal Display)に替わる表示
素子として注目されている。有機ELは、陽極層、有機
層、陰極層の積層体であり、陽極、陰極からそれぞれ注
入された正孔、電子が有機層で再結合して蛍光を発す
る。2. Description of the Related Art An organic electroluminescence (hereinafter referred to as "organic EL") display device having the features of being thin and lightweight, having a high viewing angle, high-speed response, and self-luminous type is known as a CRT (Cathod Ray Tub).
e) and display elements replacing LCDs (Liquid Crystal Displays). The organic EL is a laminate of an anode layer, an organic layer, and a cathode layer. Holes and electrons injected from the anode and the cathode are recombined in the organic layer to emit fluorescence.
【0003】有機層へ正孔、電子が注入されるよう、陽
極には金属酸化物、陰極には金属が用いられる。この
時、蛍光を外部へ取り出すために、陽極層には可視光を
透過する材料が、一般にはITO(Indium Tin Oxide)
が用いられる。A metal oxide is used for the anode and a metal is used for the cathode so that holes and electrons are injected into the organic layer. At this time, in order to extract the fluorescent light to the outside, a material that transmits visible light is used for the anode layer, generally, ITO (Indium Tin Oxide).
Is used.
【0004】有機層には、正孔と電子が再結合して蛍光
を発する発光層を挟むように、正孔注入層、正孔輸送
層、電子注入層、電子輸送層が設けられることもある。
ここで用いられる有機物は、一般に耐熱性、耐溶媒性、
耐水性、耐酸アルカリ性に劣ることが多いため、また素
子の電気的特性を保つために材料の高純度が必要なた
め、積層体形成にはスパッタ法や蒸着法を採用する。The organic layer may be provided with a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer so as to sandwich a light emitting layer that emits fluorescence by recombination of holes and electrons. .
Organic substances used here are generally heat-resistant, solvent-resistant,
A sputtering method or a vapor deposition method is used for forming a stacked body because the material often has poor water resistance and acid-alkali resistance, and high purity of a material is required to maintain electrical characteristics of the element.
【0005】有機EL表示素子は、まず基板上に陽極層
であるITOを設け、その上に有機層、陰極層が順次積
層される。有機EL表示素子が様々な情報を表示できる
ためには、複数本の陽極と複数本の陰極が直交して配設
されたマトリックス電極構造となっていなければならな
い。そのために、陽極に直交する複数本の陰極を形成し
なければならないが、前述の有機層の物質の各種耐性の
問題から、溶剤や酸アルカリ水溶液を用いるフォトリソ
グラフィ工程を陰極の形成法に採用することができな
い。陰極の形成に金属マスクを用いたマスク蒸着法の適
用も考えられる。[0005] In an organic EL display element, ITO as an anode layer is first provided on a substrate, and an organic layer and a cathode layer are sequentially laminated thereon. In order for an organic EL display element to display various information, it must have a matrix electrode structure in which a plurality of anodes and a plurality of cathodes are arranged orthogonally. For this purpose, a plurality of cathodes perpendicular to the anode must be formed. However, due to the above-mentioned various resistance problems of the organic layer material, a photolithography process using a solvent or an aqueous acid-alkali solution is employed in the method for forming the cathode. Can not do. It is also conceivable to apply a mask evaporation method using a metal mask to form the cathode.
【0006】しかしながら、この方法で大型化、高精細
化対応する場合、金属マスクのパターンは幅数10μm
程度の細線となり、しかも金属マスクがたるまないよう
張力が与えられるので、次第に伸長変形を起こし、つい
には陰極形成不良となる。微細で精度の高いパターンを
有する金属マスクは高価であるため、伸長変形を起こす
前に金属マスクを交換する工程とすると、製造コストの
増大は避けられない。However, when the method is used to increase the size and increase the definition, the pattern of the metal mask has a width of several tens μm.
Since the wire has a small thickness and tension is applied so as not to sag the metal mask, the metal mask gradually expands and deforms, and eventually the cathode formation is poor. Since a metal mask having a fine and high-precision pattern is expensive, an increase in manufacturing cost is unavoidable if the step of replacing the metal mask is performed before elongation deformation occurs.
【0007】この問題に対する従来技術を図4を用いて
説明する。特開平5−258859号公報には、有機層
301、陰極層302を積層する前に、基板上に予め隔
壁303を形成しておき、隔壁伸長方向に略直交かつ基
板に対し斜めの方向305から有機層、陰極層の斜方蒸
着を行うことにより、両層を蒸着時に分離する技術が記
載されている(図4(a)参照)。しかしながら、この
技術では、大面積の基板で斜方蒸着を行うと、蒸着源と
基板の距離に基板面内で大きな差が出るため、この差が
無視できるよう蒸着源と基板を相当離さないと均一な膜
厚が得られない。当然ながら、そのためには非常に巨大
な蒸着装置が必要となる。さらに、この技術において、
分離幅307は(隔壁の幅)+(隔壁の高さ)×tan
(蒸着角度θ)と表せる。これより、隔壁の幅を狭くす
るだけでは分離幅を狭めることにはならないことが分か
る。さらに、高精細化のために隔壁を低く、蒸着角度θ
を小さくすると、蒸着分子の回り込みが無視できなくな
って、分離が不完全になる可能性が高い。A conventional technique for solving this problem will be described with reference to FIG. JP-A-5-258859 discloses that before the organic layer 301 and the cathode layer 302 are laminated, a partition wall 303 is formed on a substrate in advance, and the partition wall 303 is formed from a direction 305 substantially orthogonal to the partition wall extending direction and oblique to the substrate. A technique is described in which oblique deposition of an organic layer and a cathode layer is performed to separate both layers during deposition (see FIG. 4A). However, in this technique, when oblique deposition is performed on a substrate having a large area, a large difference appears in the substrate plane in the distance between the deposition source and the substrate, so the deposition source and the substrate must be considerably separated so that this difference can be ignored. A uniform film thickness cannot be obtained. Naturally, this requires a very large deposition apparatus. Furthermore, in this technology,
The separation width 307 is (width of partition) + (height of partition) × tan
(Evaporation angle θ). From this, it can be seen that simply reducing the width of the partition does not reduce the separation width. Furthermore, the partition walls are lowered for higher definition, and the deposition angle θ
When is small, the wraparound of the vapor deposition molecules cannot be ignored and the separation is likely to be incomplete.
【0008】また、特開平8−315981号公報に
は、有機層301、陰極層302を積層する前に、基板
上に予め隔壁304を形成しておき、この隔壁の側面を
オーバーハング状にすることで、両層を蒸着時に分離す
る技術が記載されている(図4(b)参照)。この技術
において分離幅308は隔壁304の上部の幅である
が、これとは別に蒸着分子の回り込みを考慮してオーバ
ーハング形状や角度が定まる。そのために高精細化が進
むほど、隔壁は相似的に小さくなりパターニングが困難
になってくる。また、先の両技術においては、隔壁のみ
の分離では陰極端部309において、有機層の膜厚が減
少するために陽極陰極間の短絡の可能性が高い。これを
避けるために隔壁下に絶縁層を設けることが考えられる
が、それにより工程数が増加する。Japanese Patent Application Laid-Open No. Hei 8-315981 discloses that before the organic layer 301 and the cathode layer 302 are laminated, a partition wall 304 is formed on the substrate in advance, and the side surface of the partition wall is overhanged. Thus, a technique for separating both layers at the time of vapor deposition is described (see FIG. 4B). In this technique, the separation width 308 is the width of the upper part of the partition wall 304, but the overhang shape and angle are determined separately in consideration of the wraparound of deposition molecules. For this reason, as the definition becomes higher, the partition walls become smaller similarly, and patterning becomes more difficult. Further, in both of the above technologies, in the separation of only the partition wall, the thickness of the organic layer is reduced at the cathode end 309, so that there is a high possibility of a short circuit between the anode and the cathode. To avoid this, it is conceivable to provide an insulating layer below the partition, but this increases the number of steps.
【0009】これらの問題が引き起こされる根本的な原
因は、従来技術においては基板表面で有機層、陰極層を
分離するところにある。そこで本発明は、蒸着時の分離
を担う部分を基板表面から離すことにより課題を解決す
ることとした。The root cause of these problems lies in the separation of the organic layer and the cathode layer on the substrate surface in the prior art. Therefore, the present invention solves the problem by separating a portion responsible for separation during vapor deposition from the substrate surface.
【0010】[0010]
【発明が解決しようとする課題】本発明は、高精細化が
進んでも対応が可能であり、かつ陰極陽極間の短絡を防
止する形状の隔壁を有する有機EL表示素子用基板およ
び有機EL表示素子を提供するものである。SUMMARY OF THE INVENTION The present invention provides a substrate for an organic EL display device and an organic EL display device which can cope with high definition and which has a partition having a shape for preventing a short circuit between a cathode and an anode. Is provided.
【0011】[0011]
【課題を解決するための手段】請求項1に記載の発明
は、透明基板の表面に少なくとも複数本の透明電極、透
明電極の延伸方向と直交する方向に伸びる複数本の電気
絶縁性の隔壁を順次積層した有機エレクトロルミネッセ
ンス表示素子用基板において、前記隔壁の断面形状が透
明基板側に突出するひさしを有する形状であることを特
徴とする有機エレクトロルミネッセンス表示素子用基板
である。請求項2に記載の発明は、請求項1記載の発明
を前提とし、前記隔壁の断面形状が略T字型であること
を特徴とする有機エレクトロルミネッセンス表示素子用
基板である。請求項3に記載の発明は、請求項1記載の
発明を前提とし、前記隔壁の断面形状が透明基板から離
れる方向を向いた略矢印型であることを特徴とする有機
エレクトロルミネッセンス表示素子用基板である。請求
項4に記載の発明は、請求項1〜3に記載の有機エレク
トロルミネッセンス表示素子用基板に、有機層、陰極層
を形成したことを特徴とする有機エレクトロルミネッセ
ンス表示素子である。請求項5に記載の発明は、請求項
4記載の発明を前提とし、隔壁の側面が、有機層、陰極
層のそれぞれの膜厚より高い位置まで有機層、陰極層に
より覆われていることを特徴とする有機エレクトロルミ
ネッセンス表示素子である。According to the first aspect of the present invention, at least a plurality of transparent electrodes and a plurality of electrically insulating partitions extending in a direction perpendicular to a direction in which the transparent electrodes extend are provided on the surface of the transparent substrate. An organic electroluminescence display element substrate, wherein the cross-sectional shape of the partition wall is a shape having an eave protruding toward the transparent substrate side in the sequentially laminated organic electroluminescence display element substrate. The invention according to a second aspect is based on the premise of the first aspect, wherein the partition has a substantially T-shaped cross-sectional shape. A third aspect of the present invention is based on the premise of the first aspect, wherein the partition has a substantially arrow-shaped cross-section in a direction away from the transparent substrate. It is. According to a fourth aspect of the present invention, there is provided an organic electroluminescent display device, wherein an organic layer and a cathode layer are formed on the substrate for an organic electroluminescent display device according to the first to third aspects. The invention according to claim 5 is based on the premise that the side wall of the partition is covered with the organic layer and the cathode layer to a position higher than the respective film thicknesses of the organic layer and the cathode layer. This is an organic electroluminescent display element characterized by the following.
【0012】[0012]
【発明の実施の形態】本発明について、図面を参照しな
がら詳説する。図1(a)において、透明基板101と
は有機ELの支持部材となる基板である。よって、透明
基板には、機械強度があり絶縁性のある石英、ガラス又
はプラスチック材を用いることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the drawings. In FIG. 1A, a transparent substrate 101 is a substrate serving as a support member of the organic EL. Therefore, quartz, glass, or a plastic material having mechanical strength and insulating properties can be used for the transparent substrate.
【0013】また、透明基板の表面には、複数本の透明
電極102を設ける。透明電極の形成方法としては、I
TO(Indium Tin Oxide)、IZO(Indium Zinc Oxid
e )などの透明導電性材料を複数本の電極パターンの形
成されたマスクを介して蒸着をして行うか、透明導電性
材料を透明基板の表面にベタで蒸着した後、レジストを
用いるフォトリソグラフィ法によることができる。A plurality of transparent electrodes 102 are provided on the surface of the transparent substrate. As a method for forming a transparent electrode, I
TO (Indium Tin Oxide), IZO (Indium Zinc Oxid
e) A transparent conductive material such as e) is deposited through a mask having a plurality of electrode patterns formed thereon, or the transparent conductive material is entirely deposited on a transparent substrate surface, and then photolithography using a resist is performed. Can be by law.
【0014】そして、透明基板及び透明電極上に、透明
電極の延伸方向と直交する方向に伸びる複数本の電気絶
縁性の隔壁を設ける。この隔壁は後記する有機層のパタ
ーニングに用いる。On the transparent substrate and the transparent electrode, a plurality of electrically insulating partitions extending in a direction perpendicular to the direction in which the transparent electrode extends are provided. This partition is used for patterning an organic layer described later.
【0015】本発明における隔壁の断面形状は、隔壁上
部の横に広がった部分をひさしを有しおり、そのひさし
は透明基板側に突出している。その断面形状には、例え
ば、略T字型(Tの横棒及び端部の下方への突出がひさ
し)、略矢印型(矢印の先端の広がり部がひさし)が含
まれる。前記形状のひさしの形成には、次のような手段
を採ることができる。The cross-sectional shape of the partition wall in the present invention has an eave at a portion that extends laterally above the upper part of the partition wall, and the eave protrudes toward the transparent substrate. The cross-sectional shape includes, for example, a substantially T-shape (a horizontal bar of T and a downward projection of an end portion are eaves), and a substantially arrow shape (a widened portion at the tip of the arrow is eaves). The following means can be employed for forming the eaves having the above-mentioned shape.
【0016】手段Aは、隔壁を2つ以上の材料で構成す
るものとし、それぞれの材料でフォトリソグラフィや蒸
着、スパッタなどを行うものである。手段Bは、ネガ型
レジスト103に露光光を吸収/遮蔽する材料を混ぜ込
んでおき、レジストの膜厚方向で露光量を変化させて、
レジスト膜表面を硬化させるものである。手段Cは、化
学増幅型レジストにおいて見られる表面難溶化層を利用
するものである。表面難溶化層とは、露光により生じた
酸が、雰囲気中の塩基性ガスにより失活して発生するも
のであり、ポジ型レジストでは塩基性ガスの雰囲気に晒
すことで、ネガ型レジストではレジスト表面を保護する
ことでその形成が促進される。In the means A, the partition is made of two or more materials, and photolithography, vapor deposition, sputtering or the like is performed with each material. Means B is to mix a material that absorbs / blocks exposure light into the negative resist 103, and to change the exposure amount in the thickness direction of the resist,
This is to cure the resist film surface. Means C utilizes a surface insoluble layer found in a chemically amplified resist. The surface insolubilized layer is a layer in which the acid generated by exposure is deactivated by the basic gas in the atmosphere, and is exposed to the basic gas atmosphere in the case of a positive resist. Protecting the surface promotes its formation.
【0017】本発明では、3種いずれの手段も採ること
ができるが、工程数の少ない手段B、手段Cが好まし
い。以下、図1(b)、(c)を用いて、手段B、手段
Cによる方法を説明する。In the present invention, any of the three means can be employed, but means B and C having a small number of steps are preferred. Hereinafter, a method using the means B and the means C will be described with reference to FIGS.
【0018】複数本の透明電極102が予めパターニン
グされた透明基板101にレジスト103を塗布する。
ここでレジストは有色無色を問わない。手段Bの場合、
ネガ型レジストに露光光を吸収/遮蔽する材料を混ぜ込
む。このような材料としては、露光波長に合わせた光吸
収剤、有機物顔料/染料、無機物顔料/染料が使用でき
る。手段Cの場合、ポジ型ネガ型いずれでもよい。レジ
ストの塗布方法は、スピンコート、ロールコート、印刷
法等を使用できる。塗布されたレジスト103は、適切
な条件で乾燥される。手段Cでネガ型レジストである場
合は、レジスト103上に、表面保護膜104を塗布す
る。表面保護膜としては、ポリビニルアルコール、ポリ
アクリル酸などの水溶性の物質を用いることができる。A resist 103 is applied to a transparent substrate 101 on which a plurality of transparent electrodes 102 are patterned in advance.
Here, the resist may be colored or colorless. In the case of the means B,
A material that absorbs / blocks exposure light is mixed into a negative resist. As such a material, a light absorber, an organic pigment / dye, and an inorganic pigment / dye that can be used according to the exposure wavelength can be used. In the case of the means C, either a positive type or a negative type may be used. As a method for applying the resist, spin coating, roll coating, printing, or the like can be used. The applied resist 103 is dried under appropriate conditions. If the resist is a negative resist by means C, a surface protective film 104 is applied on the resist 103. As the surface protective film, a water-soluble substance such as polyvinyl alcohol and polyacrylic acid can be used.
【0019】透明電極に直交する適切なパターンを有す
るフォトマスク105を用いて、レジスト103を露光
する。手段Bの場合、露光光は基板まで達せず、レジス
ト膜表面のみを硬化させる。手段Cでポジ型レジストの
場合、露光後、雰囲気に所定時間放置するか、塩基性ガ
ス107の存在する雰囲気に適切な時間晒すことで、露
光により発生した酸108が失活し表面難溶化層106
を形成する。手段Cでネガ型レジストの場合は、表面保
護膜104により塩基性ガス107の拡散が抑止され、
また表面保護膜104中の水分により酸108の拡散が
増長されるため、表面の硬化が促進し表面難溶化層10
6が形成される。露光後、レジスト材料に依存するが、
PEB(Post-Exposure Bake)を行う。PEBが不要な
場合もある。The resist 103 is exposed using a photomask 105 having an appropriate pattern perpendicular to the transparent electrodes. In the case of the means B, the exposure light does not reach the substrate and only the surface of the resist film is cured. In the case of a positive resist by the means C, after exposure, it is left in an atmosphere for a predetermined time or exposed to an atmosphere in which a basic gas 107 is present for an appropriate time, so that the acid 108 generated by the exposure is deactivated and the surface hardly soluble layer is formed. 106
To form In the case of a negative resist by means C, diffusion of the basic gas 107 is suppressed by the surface protective film 104,
In addition, since the diffusion of the acid 108 is increased by moisture in the surface protective film 104, the hardening of the surface is promoted and the surface hardly soluble layer 10
6 are formed. After exposure, depending on the resist material,
Perform PEB (Post-Exposure Bake). PEB may not be required.
【0020】その後、レジスト103を現像する。手段
Cでネガ型レジストの場合、現像前に表面保護膜104
を水洗で除去しておくと、均一な現像を得ることができ
る。現像液は、レジスト材料に適合したものを選択す
る。手段Bの場合、レジスト103の表面が硬化してい
る。手段Cの場合、表面難溶化層106が形成されてい
る。したがって、図1(d)のように、現像により得ら
れる隔壁パターンはひさし109を有し、その幅はフォ
トマスク105のパターン幅より広いものとなる。現像
後、十分な水洗を施し、乾燥する。Thereafter, the resist 103 is developed. In the case of using a negative resist by the means C, the surface protective film 104 is required before development.
Is removed by washing with water, uniform development can be obtained. As the developer, a developer suitable for the resist material is selected. In the case of the means B, the surface of the resist 103 is hardened. In the case of the means C, the surface hardly-solubilized layer 106 is formed. Therefore, as shown in FIG. 1D, the partition pattern obtained by the development has the eaves 109, and the width thereof is wider than the pattern width of the photomask 105. After the development, the substrate is sufficiently washed with water and dried.
【0021】その後、レジストに応じた適切な温度で焼
成する。この時、加熱条件により若干軟化することでひ
さし109は透明基板側に突出して、略T字型(図2
(a)参照)、略矢印型(図2(b)参照)のような形
状で硬化し、本発明の有機EL表示素子用基板を得る。Thereafter, baking is performed at an appropriate temperature according to the resist. At this time, the eaves 109 protrude toward the transparent substrate side by being slightly softened by the heating conditions, and are substantially T-shaped (FIG. 2).
(See FIG. 2 (a)), and cured in a substantially arrow shape (see FIG. 2 (b)) to obtain the substrate for an organic EL display element of the present invention.
【0022】この有機EL表示素子用基板を用いて、有
機EL表示素子を作成する場合、さらに有機層、陰極層
を設ける。When an organic EL display element is produced using this substrate for an organic EL display element, an organic layer and a cathode layer are further provided.
【0023】ここで有機層は、発光層の他正孔注入層、
正孔輸送層、電子注入層、電子輸送層などから構成され
る場合もある。一層で、例えば発光と正孔輸送と複数の
働きを有する物質もある。有機層の形成には、以下のよ
うな物質を使用することができる。Here, the organic layer includes a light emitting layer, a hole injection layer,
It may be composed of a hole transport layer, an electron injection layer, an electron transport layer, and the like. Some substances have multiple functions, for example, light emission and hole transport. The following substances can be used for forming the organic layer.
【0024】発光層としては、例えばベンゾチアゾール
系、ベンゾイミダゾール系、ベンゾオキサゾール系など
の蛍光増白剤、スチリルベンゼン系化合物、12−フタ
ロペリノン、1,4−ジフェニル−1,3−ブタジエ
ン、1,1,4,4−テトラフェニル−1,3−ブタジ
エン、ナフタルイミド誘導体、ペリレン誘導体、オキサ
ジアゾール誘導体、ピラジリン誘導体、シクロペンタジ
エン誘導体、ピロロピロール誘導体、スチリルアミン誘
導体、クマリン系化合物、9,10- ジアリールアントラセ
ン誘導体、サリチル酸塩、ピレン、コロネン、ペリレ
ン、ルブレン、テトラフェニルブタジエン、9,10- ビス
(フェニルエチニル)アントラセン、8-キノリノラート
リチウム、トリス(8-キノリノラート)アルミニウム錯
体(以下Alqと略す)、N, N’−ジフェニル- N,
N’−ビス(3-メチルフェニル)- ベンジジン(以下TP
D と略す)、トリス(5,7-ジクロロ、8-キノリノラー
ト)アルミニウム錯体、トリス(5-クロロ-8- キノリノ
ラート)アルミニウム錯体、ビス(8-キノリノラート)
亜鉛錯体、トリス(5-フルオロ-8- キノリノラート)ア
ルミニウム錯体、トリス(4-メチル-5- トリフルオロメ
チル-8- キノリノラート)アルミニウム錯体、トリス
(4-メチル-5- シアノ-8- キノリノラート)アルミニウ
ム錯体、ビス〔8-(パラートシル)アミノキノリン〕亜
鉛錯体およびカドミウム錯体、1,2,3,4-テトラフェニル
シクロペンタジエン、ペンタフェニルシクロペンタジエ
ン、ポリ-2,5- ジヘプチルオキシ-P- フェニレンビニレ
ン、あるいは特開平4―31488号公報、米国特許5
141671号、同4769292号で言及されている
蛍光物質やN, N’−ジアリール置換ピロロピロール化
合物等が使用できる。As the light emitting layer, for example, a fluorescent brightener such as benzothiazole, benzimidazole or benzoxazole, styrylbenzene compound, 12-phthaloperinone, 1,4-diphenyl-1,3-butadiene, 1,4,4-tetraphenyl-1,3-butadiene, naphthalimide derivative, perylene derivative, oxadiazole derivative, pyrazirine derivative, cyclopentadiene derivative, pyrrolopyrrole derivative, styrylamine derivative, coumarin-based compound, 9,10- Diarylanthracene derivative, salicylate, pyrene, coronene, perylene, rubrene, tetraphenylbutadiene, 9,10-bis (phenylethynyl) anthracene, 8-quinolinolate lithium, tris (8-quinolinolate) aluminum complex (hereinafter abbreviated as Alq) ), N, N ' -Diphenyl-N,
N'-bis (3-methylphenyl) -benzidine (hereinafter TP
D), tris (5,7-dichloro, 8-quinolinolate) aluminum complex, tris (5-chloro-8-quinolinolate) aluminum complex, bis (8-quinolinolate)
Zinc complex, tris (5-fluoro-8-quinolinolate) aluminum complex, tris (4-methyl-5-trifluoromethyl-8-quinolinolate) aluminum complex, tris (4-methyl-5-cyano-8-quinolinolate) aluminum Complex, bis [8- (paratosyl) aminoquinoline] zinc complex and cadmium complex, 1,2,3,4-tetraphenylcyclopentadiene, pentaphenylcyclopentadiene, poly-2,5-diheptyloxy-P-phenylenevinylene Or JP-A-4-31488, US Pat.
Fluorescent substances and N, N'-diaryl-substituted pyrrolopyrrole compounds referred to in JP-A-141671 and JP-A-4769292 can be used.
【0025】なお、本発明に使用できる物質は、上記例
に特に限定されるものではなく、さらなる発光性能を持
つ物質を選択できる。The substance that can be used in the present invention is not particularly limited to the above examples, and a substance having a further luminous performance can be selected.
【0026】正孔注入層としては、例えばトリアゾール
誘導体、オキサジアゾール誘導体、イミダゾール誘導
体、ポリアリールアルカン誘導体、ピラゾリン誘導体、
ピラゾロン誘導体、フェニレンジアミン誘導体、アリー
ルアミン誘導体、アミノ置換カルコン誘導体、オキサゾ
ール誘導体、スチリルアントラセン誘導体、フルオレノ
ン誘導体、ヒドラゾン誘導体、スチルベン誘導体、シラ
ザン誘導体、ポリシラン、アニリン系共重合体、導電性
高分子オリゴマー、ポルフィリン化合物、芳香族第三級
アミン化合物、スチリルアミン化合物、芳香族ジメチリ
ディン系化合物が使用できる。As the hole injection layer, for example, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative,
Pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, polysilanes, aniline copolymers, conductive polymer oligomers, porphyrins Compounds, aromatic tertiary amine compounds, styrylamine compounds, and aromatic dimethylidin compounds can be used.
【0027】電子注入層としては、例えばニトロ置換フ
ルオレノン誘導体、アントラキノジメタン誘導体、ジフ
ェニルキノン誘導体、チオピランジオキシド誘導体、ナ
フタレンペリレンなどの複素環テトラカルボン酸無水
物、カルボジイミド、フレオレニリデンメタン誘導体、
アントロン誘導体、オキサジアゾール誘導体が使用でき
る。Examples of the electron injecting layer include nitro-substituted fluorenone derivatives, anthraquinodimethane derivatives, diphenylquinone derivatives, thiopyrandioxide derivatives, heterocyclic tetracarboxylic anhydrides such as naphthaleneperylene, carbodiimide, and fluorenylidenemethane derivatives. ,
Anthrone derivatives and oxadiazole derivatives can be used.
【0028】また、陰極層の形成は、アルミニウムの
他、MgAg、AlLi、CuLiなどが使用できる。For the formation of the cathode layer, MgAg, AlLi, CuLi or the like can be used in addition to aluminum.
【0029】そして、有機層201、陰極層202の蒸
着は、基板に対し多方向203から施すようにする。具
体的には、蒸着中に基板を回転させる、蒸着中に基板を
傾ける、基板と蒸着源の距離をあまり離さない、蒸着源
を多数用意することが考えられる。多方向203から蒸
着することにより、有機層201、陰極層202は、図
5のように積層される。ひさしが透明基板に突出してい
るため、パターニングが可能であるとともに、不要な蒸
着分子の回り込みを完全に防止できる。蒸着物は、隔壁
の側面を有機層、陰極層の膜厚より高い位置まで覆って
いれば、陰極陽極間の短絡は完全に起こらない。そし
て、各画素は隔壁の幅のみで仕切られるので、発光20
4を取り出す領域を最大限採ることができる、本発明の
有機EL表示素子を得る。Then, the organic layer 201 and the cathode layer 202 are deposited on the substrate from multiple directions 203. Specifically, it is conceivable to rotate the substrate during vapor deposition, tilt the substrate during vapor deposition, prepare a large number of vapor deposition sources without keeping the distance between the substrate and the vapor deposition source so large. By vapor deposition from multiple directions 203, the organic layer 201 and the cathode layer 202 are laminated as shown in FIG. Since the eaves protrude from the transparent substrate, patterning is possible, and unnecessary wraparound of evaporated molecules can be completely prevented. If the deposit covers the side wall of the partition to a position higher than the thickness of the organic layer and the cathode layer, a short circuit between the cathode and the anode does not completely occur. Since each pixel is partitioned only by the width of the partition, the light emission 20
The organic EL display element of the present invention, which can take the maximum area for extracting 4 from the above, is obtained.
【0030】[0030]
【実施例】<実施例1>ネガ型レジストOMR−85
(東京応化工業製)にカーボンブラックを、重量比10
0:3で加え良く攪拌し、ネガ型レジストを得た。<Example 1> Negative resist OMR-85
(Manufactured by Tokyo Ohka Kogyo) with carbon black at a weight ratio of 10
The mixture was added at 0: 3 and stirred well to obtain a negative resist.
【0031】幅100μm、ピッチ105μmのストラ
イプパターンのITO透明電極を有するガラス基板上に
スピンコート法により、ネガ型レジストを膜厚約10μ
m塗布し、70℃で30分乾燥した。透明電極に直交す
る幅10μm、ピッチ105μmのストライプパターン
を有するフォトマスクを用いてレジストを100mJ/
cm2 で露光した。その後、OMR現像液(東京応化工
業製)で現像、OMRリンス液(東京応化工業製)でリ
ンスし乾燥した。その後、200℃で1時間焼成した。
走査型電子顕微鏡でレジスト断面を観察したところ、ひ
さしの幅7μm、基板と接する隔壁の幅5μm、ピッチ
105μmの矢印型の隔壁が形成できた。On a glass substrate having an ITO transparent electrode having a stripe pattern with a width of 100 μm and a pitch of 105 μm, a negative resist was applied to a film thickness of about 10 μm by spin coating.
m and dried at 70 ° C. for 30 minutes. Using a photomask having a stripe pattern with a width of 10 μm and a pitch of 105 μm orthogonal to the transparent electrode, the resist was adjusted to 100 mJ /
Exposure was in cm 2 . Thereafter, the film was developed with an OMR developer (manufactured by Tokyo Ohka Kogyo), rinsed with an OMR rinse solution (manufactured by Tokyo Ohka Kogyo), and dried. Thereafter, it was baked at 200 ° C. for 1 hour.
Observation of the cross section of the resist with a scanning electron microscope revealed that an arrow-shaped partition wall having a width of 7 μm, a partition wall width of 5 μm in contact with the substrate, and a pitch of 105 μm was formed.
【0032】<実施例2>エポキシ樹脂(東都化成
(株)製:「YDPN−601」)390gおよびアク
リル酸108gを1,6−ヘキサンジオールアクリレー
ト750g中に溶解させてハイドロキノン0.5gおよ
びメチルエチルアンモニウムアイオダイド3gの存在下
に100〜150℃で2時間反応させた。ついで、無水
ヘッド酸279gを添加し、100〜150℃で2時間
反応させて、水溶性光重合性オリゴマーを得た。<Example 2> 390 g of an epoxy resin (manufactured by Toto Kasei Co., Ltd .: "YDPN-601") and 108 g of acrylic acid were dissolved in 750 g of 1,6-hexanediol acrylate, and 0.5 g of hydroquinone and methyl ethyl were dissolved. The reaction was carried out at 100 to 150 ° C. for 2 hours in the presence of 3 g of ammonium iodide. Next, 279 g of head anhydride was added and reacted at 100 to 150 ° C. for 2 hours to obtain a water-soluble photopolymerizable oligomer.
【0033】得られた水溶性光重合性オリゴマー100
重量部、非水溶性光重合性オリゴマーとしてフェノール
ノボラック型エポキシ樹脂(東都化成(株)製:「YD
CN−602」)40重量部、光重合性モノマーとして
トリメチロールプロパントリアクリレート(共栄社油脂
(株)製:「TMP−A」)20重量部、光重合開始剤
として(チバガイギー社製:「イルガキュア−65
1」)5重量部、光硬化用触媒前駆体としてジフェニル
ヨードニウムヘキサフルオロアンチモネート0.5重量
部および重合禁止剤としてハイドロキノン0.1重量部
を酢酸ブチルセロソルブ1000重量部中で混合して、
化学増幅型ネガ型レジストを得た。The obtained water-soluble photopolymerizable oligomer 100
Phenol novolak type epoxy resin (manufactured by Toto Kasei Co., Ltd .: "YD
CN-602 ") 40 parts by weight, trimethylolpropane triacrylate (manufactured by Kyoeisha Yushi Co., Ltd .:" TMP-A ") as a photopolymerizable monomer, 20 parts by weight, and a photopolymerization initiator (manufactured by Ciba Geigy:" Irgacure- ") 65
1 ") 5 parts by weight, 0.5 parts by weight of diphenyliodonium hexafluoroantimonate as a photocuring catalyst precursor and 0.1 part by weight of hydroquinone as a polymerization inhibitor were mixed in 1000 parts by weight of butyl acetate.
A chemically amplified negative resist was obtained.
【0034】幅100μm、ピッチ105μmのストラ
イプパターンのITO透明電極を有するガラス基板上に
スピンコート法により、化学増幅型ネガ型レジストを膜
厚約10μm塗布し、70℃で30分乾燥した。その上
に、ポリビニルアルコールを約1μm塗布し、室温で放
置して乾燥した。透明電極に直交する幅10μm、ピッ
チ105μmのストライプパターンを有するフォトマス
クを用いてレジストを100mJ/cm2 で露光した。
水洗してポリビニルアルコールを除去した後、TMAH
(テトラメチルアンモニウムハイドロオキサイド)2.
5%溶液で現像した。その後、200℃で1時間焼成し
た。走査型電子顕微鏡でレジスト断面を観察したとこ
ろ、上辺の端部が垂れ下がった上辺の幅7μm、基板と
接する隔壁の幅5μm、ピッチ105μmのT字型の隔
壁が形成できた。A chemically amplified negative resist was applied to a thickness of about 10 μm on a glass substrate having an ITO transparent electrode having a stripe pattern with a width of 100 μm and a pitch of 105 μm by a spin coating method, and dried at 70 ° C. for 30 minutes. About 1 μm of polyvinyl alcohol was applied thereon, and dried at room temperature. The resist was exposed at 100 mJ / cm 2 using a photomask having a stripe pattern with a width of 10 μm and a pitch of 105 μm orthogonal to the transparent electrode.
After washing with water to remove polyvinyl alcohol, TMAH
(Tetramethylammonium hydroxide) 2.
Developed with a 5% solution. Thereafter, it was baked at 200 ° C. for 1 hour. Observation of the cross section of the resist with a scanning electron microscope revealed that a T-shaped partition wall having a width of 7 μm, a width of the partition wall in contact with the substrate of 5 μm, and a pitch of 105 μm, with the upper end hanging down, was formed.
【0035】<実施例3>幅100μm、ピッチ105
μmのストライプパターンのITO透明電極を有するガ
ラス基板上にスピンコート法により、化学増幅型ポジ型
レジストAZ7200(ヘキスト製)を膜厚約10μm
塗布し、90℃で30分乾燥した。これを濃度10pp
mのアンモニア雰囲気に10分放置した後、透明電極に
直交する幅10μm、ピッチ105μmのストライプパ
ターンを有するフォトマスクを用いてレジストを100
mJ/cm2 露光した。露光後、AZ300MIFで現
像した。その後、150℃で30分焼成した。走査型電
子顕微鏡でレジスト断面を観察したところ、上辺の端部
が垂れ下がった上辺の幅6μm、基板と接する隔壁の幅
4μm、ピッチ105μmのT字型の隔壁が形成でき
た。<Embodiment 3> Width 100 μm, Pitch 105
A chemically amplified positive resist AZ7200 (manufactured by Hoechst) having a thickness of about 10 μm was formed on a glass substrate having an ITO transparent electrode having a stripe pattern of μm by spin coating.
It was applied and dried at 90 ° C. for 30 minutes. The concentration is 10pp
m in an ammonia atmosphere for 10 minutes, and then a resist having a width of 10 μm orthogonal to the transparent electrode and a photomask having a stripe pattern with a pitch of 105 μm is removed.
mJ / cm 2 was exposed. After the exposure, the film was developed with AZ300MIF. Then, it baked at 150 degreeC for 30 minutes. Observation of the cross section of the resist with a scanning electron microscope revealed that a T-shaped partition wall having a width of 6 μm on the upper side, a width of 4 μm of the partition wall in contact with the substrate, and a pitch of 105 μm was formed.
【0036】<実施例4>実施例2で得られた有機EL
表示素子用基板を冶具に固定し、有機層としてTPD、
ALq、陰極層としてアルミニウムを順次蒸着した。蒸
着源はそれぞれ7個づつ用意し、多方向から蒸着し有機
EL表示素子を得た。蒸着後、金属缶により有機EL表
示素子を封止した。得られた有機EL表示素子を発光さ
せたところ、陽極陰極が短絡することなく、ピッチ10
5μmで100×100μmの画素が隔壁底辺端まで発
光していた。Example 4 Organic EL Obtained in Example 2
The display element substrate is fixed to a jig, and TPD,
ALq and aluminum were sequentially deposited as a cathode layer. Seven evaporation sources were prepared for each, and evaporation was performed from multiple directions to obtain an organic EL display element. After vapor deposition, the organic EL display element was sealed with a metal can. When the obtained organic EL display device was allowed to emit light, the anode and the cathode were not short-circuited and the pitch was 10
Pixels of 5 μm and 100 × 100 μm emitted light to the bottom edge of the partition.
【0037】[0037]
【発明の効果】本発明に係る有機EL表示素子用基板
に、有機層、陰極層を蒸着すれば、有機層、陰極層を確
実に分離することが可能になる上、陽極陰極間の短絡を
確実に防止することができ、さらに分離幅が隔壁が基板
に接している幅のみで定まるため、分離幅を極限まで狭
めることが可能になる。これにより、有機EL表示素子
のさらなる高精細化に対応ができるようになる。加え
て、それほど高精細でなくとも表示素子中の非表示部を
狭めることで、発光面積を大きく採る、いわゆる開口率
を上げることができるようになるため、同一材料系の表
示素子でもより明るい表示素子を得ることができる。By depositing an organic layer and a cathode layer on the substrate for an organic EL display element according to the present invention, the organic layer and the cathode layer can be reliably separated and a short circuit between the anode and the cathode can be prevented. Since the separation width is determined only by the width of the partition wall in contact with the substrate, the separation width can be reduced to the limit. Thereby, it is possible to cope with further higher definition of the organic EL display element. In addition, by narrowing the non-display portion in the display element even if the definition is not so high, the light emitting area can be increased, that is, the so-called aperture ratio can be increased. An element can be obtained.
【0038】[0038]
【図1】本発明に係る有機EL基板の製造方法の説明図
である。FIG. 1 is an explanatory diagram of a method for manufacturing an organic EL substrate according to the present invention.
【図2】本発明に係る隔壁の断面図である。FIG. 2 is a sectional view of a partition wall according to the present invention.
【図3】表面難溶化層の形成の説明図である。FIG. 3 is an explanatory view of formation of a surface insolubilized layer.
【図4】従来技術の説明図である。FIG. 4 is an explanatory diagram of a conventional technique.
【図5】本発明による有機EL表示素子の断面図であ
る。FIG. 5 is a sectional view of an organic EL display device according to the present invention.
101 絶縁性透明基板 102 透明電極(陽極層) 103 レジスト 104 表面保護膜 105 フォトマスク 106 表面難溶化層 107 塩基性ガス 108 酸 109 ひさし 201、301 有機層 202、302 陰極層 203、305 蒸着方向 204 発光 303、304 従来技術による隔壁 306 斜方蒸着の蒸着角度 307、308 従来技術による分離幅 309 陽極陰極間の短絡を起こしやすい陰極端部 DESCRIPTION OF SYMBOLS 101 Insulating transparent substrate 102 Transparent electrode (anode layer) 103 Resist 104 Surface protective film 105 Photomask 106 Surface insoluble layer 107 Basic gas 108 Acid 109 Eaves 201, 301 Organic layer 202, 302 Cathode layer 203, 305 Deposition direction 204 Light emission 303, 304 Conventional partition wall 306 Deposition angle of oblique deposition 307, 308 Conventional separation width 309 Cathode end prone to short circuit between anode and cathode
Claims (5)
電極、透明電極の延伸方向と直交する方向に伸びる複数
本の電気絶縁性の隔壁を順次積層した有機エレクトロル
ミネッセンス表示素子用基板において、前記隔壁の断面
形状が透明基板側に突出するひさしを有する形状である
ことを特徴とする有機エレクトロルミネッセンス表示素
子用基板。1. An organic electroluminescent display element substrate comprising a transparent substrate and at least a plurality of transparent electrodes and a plurality of electrically insulating partitions extending in a direction perpendicular to a direction in which the transparent electrodes extend, sequentially laminated on the surface of the transparent substrate. A substrate for an organic electroluminescence display element, wherein the partition has a cross-section having an eave protruding toward the transparent substrate.
を特徴とする請求項1記載の有機エレクトロルミネッセ
ンス表示素子用基板。2. A substrate for an organic electroluminescent display device according to claim 1, wherein the partition has a substantially T-shaped cross section.
方向を向いた略矢印型であることを特徴とする請求項1
記載の有機エレクトロルミネッセンス表示素子用基板。3. The partition according to claim 1, wherein the partition has a substantially arrow-shaped cross section pointing away from the transparent substrate.
The substrate for an organic electroluminescence display element according to the above.
レクトロルミネッセンス表示素子用基板に、有機層、陰
極層を形成したことを特徴とする有機エレクトロルミネ
ッセンス表示素子。4. An organic electroluminescent display device comprising an organic electroluminescent display device substrate according to claim 1, wherein an organic layer and a cathode layer are formed on the substrate.
の膜厚より高い位置まで有機層、陰極層により覆われて
いることを特徴とする請求項4に記載の有機エレクトロ
ルミネッセンス表示素子。5. The organic electroluminescent display device according to claim 4, wherein the side surfaces of the partition walls are covered with the organic layer and the cathode layer up to positions higher than the respective film thicknesses of the organic layer and the cathode layer. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26685599A JP4310866B2 (en) | 1999-09-21 | 1999-09-21 | Substrate for organic electroluminescence display element and display element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26685599A JP4310866B2 (en) | 1999-09-21 | 1999-09-21 | Substrate for organic electroluminescence display element and display element |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001093672A true JP2001093672A (en) | 2001-04-06 |
JP4310866B2 JP4310866B2 (en) | 2009-08-12 |
Family
ID=17436609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26685599A Expired - Fee Related JP4310866B2 (en) | 1999-09-21 | 1999-09-21 | Substrate for organic electroluminescence display element and display element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4310866B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002367774A (en) * | 2001-06-04 | 2002-12-20 | Sony Corp | Thin-film pattern forming method and thin-film pattern forming device |
KR100480334B1 (en) * | 2002-12-11 | 2005-04-06 | 엘지.필립스 엘시디 주식회사 | Method for fabricating of OLED |
JP2006302723A (en) * | 2005-04-22 | 2006-11-02 | Hitachi Displays Ltd | Organic light emitting display device |
US11937463B2 (en) | 2022-03-10 | 2024-03-19 | Japan Display Inc. | Display device and manufacturing method of display device |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08315981A (en) * | 1995-03-13 | 1996-11-29 | Pioneer Electron Corp | Organic electroluminescent display panel and its manufacture |
JPH09102393A (en) * | 1995-10-06 | 1997-04-15 | Pioneer Electron Corp | Organic electroluminescent display panel and its manufacture |
JPH09330792A (en) * | 1996-06-10 | 1997-12-22 | Tdk Corp | Organic electroluminenscent display device and manufacture thereof |
JPH10172765A (en) * | 1996-12-06 | 1998-06-26 | Tdk Corp | Organic electroluminescent display device and manufacture thereof |
JPH11121168A (en) * | 1997-10-14 | 1999-04-30 | Matsushita Electric Ind Co Ltd | Organic electroluminescence element and its manufacture |
JPH11204267A (en) * | 1998-01-14 | 1999-07-30 | Sharp Corp | Electroluminescence display panel and its manufacture |
JPH11273870A (en) * | 1998-03-24 | 1999-10-08 | Tdk Corp | Organic el element |
JP2000133469A (en) * | 1998-10-29 | 2000-05-12 | Toshiba Tec Corp | Luminaire |
JP2002504740A (en) * | 1998-02-23 | 2002-02-12 | ケンブリッジ ディスプレイ テクノロジー リミテッド | Display device |
-
1999
- 1999-09-21 JP JP26685599A patent/JP4310866B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08315981A (en) * | 1995-03-13 | 1996-11-29 | Pioneer Electron Corp | Organic electroluminescent display panel and its manufacture |
JPH09102393A (en) * | 1995-10-06 | 1997-04-15 | Pioneer Electron Corp | Organic electroluminescent display panel and its manufacture |
JPH09330792A (en) * | 1996-06-10 | 1997-12-22 | Tdk Corp | Organic electroluminenscent display device and manufacture thereof |
JPH10172765A (en) * | 1996-12-06 | 1998-06-26 | Tdk Corp | Organic electroluminescent display device and manufacture thereof |
JPH11121168A (en) * | 1997-10-14 | 1999-04-30 | Matsushita Electric Ind Co Ltd | Organic electroluminescence element and its manufacture |
JPH11204267A (en) * | 1998-01-14 | 1999-07-30 | Sharp Corp | Electroluminescence display panel and its manufacture |
JP2002504740A (en) * | 1998-02-23 | 2002-02-12 | ケンブリッジ ディスプレイ テクノロジー リミテッド | Display device |
JPH11273870A (en) * | 1998-03-24 | 1999-10-08 | Tdk Corp | Organic el element |
JP2000133469A (en) * | 1998-10-29 | 2000-05-12 | Toshiba Tec Corp | Luminaire |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002367774A (en) * | 2001-06-04 | 2002-12-20 | Sony Corp | Thin-film pattern forming method and thin-film pattern forming device |
KR100480334B1 (en) * | 2002-12-11 | 2005-04-06 | 엘지.필립스 엘시디 주식회사 | Method for fabricating of OLED |
JP2006302723A (en) * | 2005-04-22 | 2006-11-02 | Hitachi Displays Ltd | Organic light emitting display device |
JP4555727B2 (en) * | 2005-04-22 | 2010-10-06 | 株式会社 日立ディスプレイズ | Organic light emitting display |
US11937463B2 (en) | 2022-03-10 | 2024-03-19 | Japan Display Inc. | Display device and manufacturing method of display device |
Also Published As
Publication number | Publication date |
---|---|
JP4310866B2 (en) | 2009-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6633121B2 (en) | Organic electroluminescence display device and method of manufacturing same | |
JP3948082B2 (en) | Method for manufacturing organic electroluminescence element | |
JP4684378B2 (en) | Manufacturing method of organic EL display panel | |
US9153791B2 (en) | Organic EL display panel | |
JPH1187063A (en) | Electroluminescent element | |
TWI544836B (en) | Display device and method for making the same | |
WO1999020080A1 (en) | Process for manufacturing organic electroluminescent device | |
WO2011122481A1 (en) | Method of producing substrate for light-emitting device | |
JP2000036391A (en) | Organic electroluminescent element and manufacture thereof | |
US6352462B2 (en) | Organic electroluminescent apparatus and method of fabricating the same | |
TWI544572B (en) | Display device | |
WO2013168546A1 (en) | Process for producing display device | |
JP2000048954A (en) | Manufacture of organic electroluminescent element | |
JP2004186001A (en) | Organic el display and substrate thereof | |
JP3674848B2 (en) | Organic thin film light emitting display and method for manufacturing the same | |
JP4310866B2 (en) | Substrate for organic electroluminescence display element and display element | |
JP2007323840A (en) | Manufacturing method of organic el display | |
JP4578032B2 (en) | Method for manufacturing electroluminescent device | |
JP2003317949A (en) | Manufacturing method for organic el element | |
JP5709422B2 (en) | Organic electroluminescence lighting device and manufacturing method thereof | |
JP2009205929A (en) | Full-color organic el display panel | |
JP4743577B2 (en) | LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF | |
JP2010044916A (en) | Manufacturing method of organic el element | |
WO2002087287A1 (en) | Electroluminescence display panel, image display, and method for manufacturing them | |
JP4044362B2 (en) | Manufacturing method of organic EL element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060725 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090403 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090421 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090504 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120522 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120522 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130522 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140522 Year of fee payment: 5 |
|
LAPS | Cancellation because of no payment of annual fees |