JP2010044916A - Manufacturing method of organic el element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic EL element wherein an auxiliary electrode is easily connected to an second electrode while an organic EL layer is vapor-deposited on the entire surface. <P>SOLUTION: In the manufacturing method of a top emission type organic EL element, a plurality of pixels are formed on a substrate where a plurality of TFTs are formed. The organic EL element comprises a first electrode, a second transparent electrode provided to face the first electrode, and an organic EL layer sandwiched between the first electrode and the second electrode. The end part of the first electrode is covered with an insulating film, and the second electrode is connected to a metal film which is patterned on the insulating film. The manufacturing method of the organic EL element comprises a step in which a metal film pattern is formed on the insulating film, a step in which a wire mask is installed to overlap the formed metal film pattern under tension, a step in which an organic EL layer is formed on the entire surface of the substrate where the wire mask is installed, a step to remove the wire mask from the substrate, and a step to form the second electrode on the entire surface of the substrate from which the wire mask is removed. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an organic electroluminescence (hereinafter referred to as organic EL) element. This organic EL element has high definition and excellent visibility, and has applicability to a wide range of screen displays such as portable terminals, industrial measuring instruments, and home televisions.

  As one of light emitting elements applied to a display device, an organic EL light emitting element having a thin film laminated structure of organic compounds is known. Organic EL light-emitting elements are thin-film self-luminous elements and have excellent characteristics such as low driving voltage, high resolution, and high viewing angle, and various studies have been made for their practical use.

  The organic EL light emitting element has a structure including at least an organic EL layer between an anode and a cathode. The organic EL layer includes an organic light emitting layer, and further has a structure in which a hole injection layer, a hole transport layer, an electron transport layer and / or an electron injection layer are interposed as required. Holes and electrons injected by applying a voltage to the anode and cathode recombine in the organic light emitting layer, and light is emitted when the resulting high energy state transitions to the ground state. A display is configured by arranging many pixels in a matrix. There are various pixel matrix driving methods, but the method called active matrix driving can reduce the power consumption compared to the passive matrix method because each pixel is driven by the switching operation of the TFT element, and the moving image etc. It is expected to be suitable for display.

  In recent years, there has been an increasing demand for larger displays, and reduction of power consumption in large-size active matrix organic EL elements has become an issue. In order to reduce power consumption, it is an important issue to prevent a voltage drop caused by the transparent electrode on the light emitting surface side.

  In order to prevent a voltage drop due to the transparent electrode on the light emitting surface side, there is a proposal that an auxiliary wiring insulated from the first electrode portion is provided on the substrate, and the second electrode is brought into contact with the exposed auxiliary wiring (for example, , See Patent Document 1).

  There is also a proposal of connecting the second electrode to an auxiliary electrode covered with an insulating layer that partitions the first electrode through a through hole provided in the insulating layer (see, for example, Patent Document 2).

  In addition, an auxiliary electrode is provided on the wall-like insulating layer partitioning the first electrode, an organic EL layer is formed in the wall-like insulating layer, a second electrode is formed on the entire surface of the substrate, and the auxiliary electrode and the second electrode are formed. There is also a proposal for connecting electrodes (for example, see Patent Document 3).

  In addition, a method for manufacturing a display device in which an organic electroluminescent element having an organic layer provided between a lower electrode and an upper electrode is provided on a substrate has been proposed. In the manufacturing method, each pixel on the substrate is provided with each pixel. After providing the auxiliary wiring having the light absorption layer provided between the patterned lower electrodes, an organic EL layer is formed on the entire surface of the substrate, and the auxiliary wiring portion is irradiated with laser light. There is also a proposal for connecting the auxiliary electrode and the upper electrode by removing the organic EL layer formed thereon (see, for example, Patent Document 4).

JP 2005-011810 A JP 2005-327664 A JP 2006-059796 A JP 2007-052966 A JP 2004-014146 A JP 2000-068054 A JP 2005-165015 A

  In the above Patent Documents 1 to 3, the organic EL layer is formed by separately painting pixels by a mask vapor deposition method or a coating method. However, the mask vapor deposition method has problems in mask alignment accuracy and yield, and the coating method has a problem that high definition is not easy.

  In Patent Document 4, after an organic EL layer is formed on the entire surface of the substrate, the organic EL layer deposited on the auxiliary electrode is removed using laser light irradiation. There is a problem that becomes high.

  The present invention has been made in view of such circumstances, and a method for manufacturing an organic EL element capable of connecting the auxiliary electrode and the second electrode in a simpler process while depositing the entire surface of the organic EL layer. The purpose is to provide.

  That is, the organic EL device manufacturing method of the present invention is a method of manufacturing an organic EL device in which a plurality of pixels are formed on a substrate on which a plurality of TFTs are formed, and the organic EL device defines a pixel region. And an organic EL layer sandwiched between the first electrode and the second electrode, and an end portion of the first electrode. Is a top-emission organic EL element in which the second electrode is connected to a metal film patterned on the insulating film, and the metal film pattern is formed on the insulating film. A step of installing a wire mask in a tensioned state so as to overlap the formed metal film pattern, a step of forming an organic EL layer on the entire surface of the substrate on which the wire mask is installed, and an organic EL layer comprising: Wire mask from the formed substrate Ku and step, and a step of forming a second electrode over the entire surface of the substrate except for the wire mask.

  The organic EL element obtained by the manufacturing method of the present invention can obtain uniform light emission since the auxiliary cathode is formed on the upper transparent electrode, so that the voltage drop when the current flows in the horizontal direction can be minimized. Is possible. In addition, when the organic EL element is driven by an active matrix method using TFTs or the like, it is possible to provide high luminance and high light emission efficiency without increasing the driving voltage.

  Moreover, according to the manufacturing method of the organic EL element of this invention, a connection with an auxiliary electrode and a 2nd electrode can be performed by a simpler process.

Hereinafter, embodiments of the present invention will be described in detail.
FIG. 1 is a cross-sectional view of a main part in which up to an upper electrode showing the element structure of one embodiment of an organic EL element manufactured by the manufacturing method of the present invention is shown, showing one subpixel and an auxiliary electrode adjacent thereto.

On the TFT substrate 10, a patterned first electrode 11 is mounted.
The interlayer insulating film 12 made of an inorganic material such as a photoresist material or a silicon oxide film is connected to the end of the adjacent first electrode 11 from the end of the first electrode 11 through the surface of the TFT substrate 10 between the adjacent first electrodes 11. The pixel region is defined by being formed over the portion.

  The interlayer insulating film 12 has a cross-sectional shape having a recess 13 at the center. A metal film 14 is formed on the recess, and this metal film 14 is used as an auxiliary electrode connected to the second electrode 16. A recess is formed in the central portion of the cross-sectional shape of the interlayer insulating film 12, and the cross-sectional shape of the metal film 14 formed on the recess is also formed in the central portion along this.

  The recess 13 of the interlayer insulating film 12 can be formed by etching the exposed interlayer insulating film using a predetermined resist pattern as a mask.

  After the formation of the metal film 14, as shown in FIG. 2, a wire mask 17 is installed along the concave groove formed by the concave portion of the cross-sectional shape of the metal film. At this time, the wire mask 17 is fixed at the concave portion of the metal film. FIG. 2 shows the case where the wire is a wire having a circular cross section. The diameter of the wire mask 17 is assumed to be larger than the width of the opening of the recess having the cross-sectional shape of the metal film.

  When the organic EL layer 15 is formed by vapor deposition, the vapor flow of the organic molecules travels almost linearly, so that the organic molecules are not deposited on the portion that is in the shadow of the wire at the position facing the wire mask 17. Even if the vapor flow wraps around, the wraparound is prevented at the contact point between the metal film 14 and the wire mask 17, and the organic EL layer 15 is not deposited inside the concave shape.

  The cross-sectional shape of the wire used for the wire mask can be any cross-sectional shape such as a circle, an ellipse, a rectangle, and a trapezoid, but a wire having a circular cross-section as shown in FIG. 2 is preferably used. FIG. 5 shows an example in which a wire having a rectangular cross-sectional shape is used as the wire mask 17, but also in the case of the rectangular wire shown in FIG.

  By tapering the periphery of the concave portion of the metal film 14, the wire mask 17 can be brought into contact with the tapered portion, and blurring of the wire mask 17 can be suppressed.

  In order to form the taper of the metal film 14, it is desirable that the recess 13 of the interlayer insulating film 12 has a taper shape.

  The interlayer insulating film 12 having the recess 13 and the metal film (auxiliary electrode) 14 are formed with high definition by photolithography.

  FIG. 3 shows a plan view when the wire mask 17 is installed. FIG. 3 shows three pixels.

  The pixel region opening 18 shown in FIG. 3 is surrounded by the interlayer insulating film 12, and the first electrode 11 is exposed on the surface thereof. A pixel is formed by sequentially forming the organic EL layer 15 and the second electrode 16 in the pixel region opening 18.

  In the present invention, as shown in FIG. 2, before the organic EL layer 15 is formed, a metal wire mask 17 is placed on the auxiliary electrode 14 on the interlayer insulating film 12, and the organic EL layer is formed by, for example, vapor deposition or sputtering. 15 is formed. That is, the separation pattern of the organic EL layer 15 is formed by using a plurality of wires as a mask. After the organic EL layer 15 is formed, the wire mask 17 is removed, and then the second electrode 16 is formed on the entire surface of the substrate, and the auxiliary electrode 14 and the second electrode 16 are connected. Since the organic EL layer 15 is not deposited inside the concave shape after the wire mask 17 is removed, the contact between the second electrode 16 and the metal film 14 is reliably formed at the center of the concave portion of the metal film 14.

  The pattern formation by the wire mask is a cathode separation method of the passive matrix element, but the upper cathode having the line pattern is formed by forming the upper cathode with the wire mask placed on the organic EL layer. (See Patent Document 5). The wire is tensioned so that the wire is linearly arranged at a predetermined interval. Although this is also a cathode separation method for passive matrix elements, there is also a proposal to use a resin linear material in order to absorb the influence of stress due to elongation of the wire in the cathode separation step (see Patent Document 6). Patent Document 7 also relates to a passive matrix organic EL device. In Patent Document 7, an EL layer is formed by vapor deposition using a wire as a mask.

  In any example, the wire is placed on a flat substrate surface, and even if the wire is tensioned, the wire stretched across the both ends of the substrate is generated, which makes it difficult to form a high-definition pattern. Become.

  In the present invention, the wire mask 17 is preferably made of a heat-resistant metal wire. Examples of the heat-resistant metal that can be preferably used for the wire mask 17 include tungsten, tantalum, molybdenum, and alloys thereof.

  The wire constituting the wire mask 17 may have a thickness that can realize a predetermined separation interval, but a wire having a thickness of preferably 15 μm to 60 μm, more preferably 30 μm is used.

  The organic EL layer 15 includes at least an organic light emitting layer, and is formed by laminating layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer as necessary. Each layer is sequentially solid-formed by a vacuum vapor deposition method without using a vapor deposition mask having an open area. Below, the structure of an example organic electroluminescent layer is shown.

(1) Anode / organic light emitting layer / cathode (2) Anode / hole injection layer / organic light emitting layer / cathode (3) Anode / organic light emitting layer / electron injection layer / cathode (4) Anode / hole injection layer / organic Light emitting layer / electron injection layer / cathode (5) Anode / hole injection layer / hole transport layer / organic light emitting layer / electron injection layer / cathode

The material of each layer in the organic EL layer is not particularly limited, and known materials can be used. For example, LiF can be used as the electron injection layer. Alq ₃ can be used as the electron transport layer, and it may be doped with an alkali metal such as Li.

  The material of the organic light emitting layer can be selected according to the desired color tone. For example, in order to obtain light emission from blue to blue-green, fluorescence such as benzothiazole, benzimidazole, and benzoxazole is used. Brightening agents, styrylbenzene compounds, aromatic dimethylidin compounds, and the like can be used.

  As host materials, aluminum chelate, 4,4′-bis (2,2′-diphenylvinyl), 2,5-bis (5-tert-butyl-2-benzoxazolyl) -thiophene (BBOT), biphenyl (DPVBi) is used. Blue dopants include perylene, 2,5,8,11-tetra-t-butylperylene (TBP), 4,4′-bis [2- {4- (N, N-diphenylamino) phenyl} vinyl] Biphenyl (DPAVBi) or the like is 0.1 to 5%, and red dopants include 4- (dicyanomethylene) -2-methyl-6- (p-dimethylaminostyryl) -4H-pyran, 4,4-difluoro-1 , 3,5,7-tetraphenyl-4-bora-3a, 4a, -diaza-s-indacene, propanedinitrile (DCJT1), Nile Red and the like are used in an amount of 0.1 to 5%. In order to perform white light emission, a blue light-emitting layer containing the blue dopant and a red light-emitting layer containing the red dopant may be stacked.

  As the hole transport layer, α-NPD can be used, and it may be doped with a Lewis acid compound such as F4-TCNQ. Moreover, CuPc can be used as the hole injection layer.

  As shown in FIG. 6, the color conversion filter substrate 200 is manufactured as follows.

1.1 Color Filter The color filter used in the element of the present invention is a pigment dispersion type color filter in which a pigment is dispersed in a photoresist.

  The color filter includes a blue filter 24 that transmits a wavelength of 400 nm to 550 nm, a green filter 23 that transmits a wavelength of 500 nm to 600 nm, and a red filter 22 that transmits a wavelength of 600 nm or more. Further, a black matrix 25 that does not transmit the visible region is disposed between the color filter pixels mainly for the purpose of improving the contrast.

1.2 Color Conversion Filter In the present invention, the organic fluorescent dye used for the color conversion filters 26 and 27 absorbs light in the near-ultraviolet region or visible region, particularly blue or blue-green region emitted from the light emitter. Any one that emits different visible light may be used, but preferably at least one fluorescent dye that emits fluorescence in the red region is used, and may be combined with one or more fluorescent dyes that emit fluorescence in the green region.

  Examples of fluorescent dyes that absorb light in the blue to blue-green region emitted from the light emitter and emit fluorescence in the red region include rhodamine B, rhodamine 6G, rhodamine 3B, rhodamine 101, rhodamine 110, sulforhodamine, basic violet 11, Rhodamine dyes such as Basic Red 2, cyanine dyes, pyridine dyes such as 1-ethyl-2- [4- (p-dimethylaminophenyl) -13-butadienyl] -pyridium-perchlorate (pyridine 1), or And oxazine dyes.

  Examples of fluorescent dyes that absorb light in the blue or blue-green region emitted from the light emitter and emit fluorescence in the green region include 3- (2′-benzothiazolyl) -7-diethylaminocoumarin (coumarin 6) and 3- (2 '-Benzimidazolyl) -7-N, N-diethylaminocoumarin (coumarin 7), 3- (2'-N-methylbenzimidazolyl) -7-N, N-diethylaminocoumarin (coumarin 30), 2, 3, 5, 6 -1H, 4H-tetrahydro-8-trifluoromethylquinolidine (9,9a, 1-gh) coumarin (coumarin 153) and other coumarin dyes, or basic yellow 51 which is a coumarin dye dye, and solvent yellow 11 And naphthalimide dyes such as Solvent Yellow 116.

  The organic fluorescent dye used in the present invention is a polymethacrylate, polyvinyl chloride, vinyl chloride-vinyl acetate copolymer resin, alkyd resin, aromatic sulfonamide resin, urea resin, melamine resin, benzoguanamine resin, and these resins. An organic fluorescent pigment may be obtained by kneading into a mixture or the like in advance to obtain a pigment.

  The organic fluorescent dye used in the present invention is contained in the fluorescent color conversion film in an amount of 0.01 to 5% by weight, more preferably 0.1 to 2% by weight, based on the weight of the conversion film. If the content of the organic fluorescent dye is less than 0.01% by weight, sufficient wavelength conversion cannot be performed, or if the content exceeds 5%, color conversion is performed due to effects such as concentration quenching. Resulting in reduced efficiency.

  Next, the matrix resin used in the fluorescent color conversion film of the present invention is a photocurable or photothermal combination type curable resin that is subjected to light and / or heat treatment to generate radical species or ionic species to be polymerized or crosslinked. Insoluble and infusible. A photocurable or photothermal combination type curable resin can be patterned with high definition, and is preferable in terms of reliability such as solvent resistance and heat resistance.

1.3 Gas Barrier Layer When the color conversion filter substrate 200 is combined with an organic light emitting element, a gas barrier layer 28 having a passivation effect may be laminated on the upper surface for the purpose of protecting the organic light emitting element from moisture generated from the color conversion filter. . The gas barrier layer 28 is required to be a transparent and dense pinhole film, such as SiO _x , SiN _x , SiN _x Oy, AlO _x , TiO _x , TaO _x , ZnO _{x and} other inorganic oxides and inorganic nitrides. Can be used. There is no restriction | limiting in particular as a formation method of this gas barrier layer 28, It can form by common methods, such as a sputtering method, CVD method, a vacuum evaporation method, a dip method. The film thickness is preferably 200 to 500 nm.

  The organic light-emitting element substrate 100 and the color conversion filter substrate 200 formed as described above are overlapped facing each other as shown in FIG. 7, and this is dried in a glove box in a dry nitrogen atmosphere (both oxygen and moisture concentrations are 10 ppm). Below), the display can be completed by pasting together.

  The present invention will be further described below with reference to examples.

<Example 1>
A VGA standard (640 × RGB × 480) display was produced. The pixel pitch is 0.780 mm. The RGB subpixel size was 0.148 × 0.664 mm, the subpixel interval was 0.100 mm, the pixel size was 0.664 mm × 0.664 mm, and the pixel interval was 0.116 mm.

  On the glass substrate 19 having a size of 500 mm × 500 mm × 0.50 mm, a light emitting portion (640 × RGB × 480) having the above pixel configuration was formed. The manufacturing method is shown below.

  FIG. 4 is a cross-sectional view of an essential part showing steps of the organic EL element step by step, showing one subpixel and an auxiliary electrode adjacent thereto.

  First, the polysilicon TFT substrate 10 was formed on the glass substrate 19 by a conventionally known method. FIG. 4A is a view showing a state in which the polysilicon TFT substrate 10 is mounted on the glass substrate 19.

  Next, 100 nm-thick Al is vapor-deposited as a highly reflective electrode by vapor deposition, and unnecessary portions are removed by photolithography to form a first electrode (cathode) that becomes a subpixel electrode of 0.148 mm × 0.664 mm. ) 11 was formed. FIG. 4B shows a state where the first electrode (cathode) 11 is formed. A contact between the first electrode 11 and the drain of the TFT is formed through a via hole opened in the TFT substrate 10.

  Next, a positive photoresist [WIX-2A] (trade name, manufactured by ZEON CORPORATION) is applied to the entire surface, and an opening of 0.148 × 0.664 mm is formed at the position corresponding to the subpixel on the first electrode 11 by photolithography. Then, an interlayer insulating film 12 having a thickness of 1.0 μm was formed. The state is shown in FIG. The angle of the end portion of the interlayer insulating film 12 with respect to the TFT substrate 10 is an acute angle.

  Subsequently, a resist pattern having an opening of 20 μm width extending in one direction of the pixel array is formed on the entire surface of the substrate by photolithography, and the exposed interlayer insulating film portion has a depth of 0.1 mm. After etching by 5 μm and stripping the resist, a recess 13 having a width of 20 μm and a depth of 0.5 μm extending in one direction of the pixel array was formed. The state is shown in FIG.

  Next, Al having a thickness of 200 nm and a width of 25 μm is formed so as to cover the concave portion provided on the interlayer insulating film 12 by vapor deposition using a mask having the same pattern shape as the photomask for forming the concave portion resist pattern. A metal film 14 was formed as an auxiliary electrode. The auxiliary electrode also has a concave portion with a width of 20 μm and a depth of 0.5 μm reflecting the concave shape of the underlying insulating film. The state where the auxiliary electrode is installed is shown in FIG.

Next, the substrate on which the auxiliary electrode made of the first electrode 11, the interlayer insulating film 12, and the metal film 14 is formed is placed on the substrate holder, and the wire mask 17 made of a plurality of tungsten wires (diameter 60 μm) is placed on the auxiliary electrode 14. These concave shapes were used as a guide and aligned in parallel to the arrangement direction of the auxiliary electrodes. A state in which the wire mask 17 is arranged is shown in FIG. A 10 N tension was applied to the wire. The substrate holder was moved to the vacuum preparation chamber of the vapor deposition apparatus, the substrate was brought into close contact with the wire mask 17, and the internal pressure of the vacuum chamber was reduced to 1 × 10 ⁻⁴ Pa.

Following the above steps, the substrate on which the first electrode 11 and the interlayer insulating film 12 are formed is mounted in a vapor deposition apparatus, and the electron transport layer, the first organic light emitting layer, and the hole transport layer are sequentially formed without breaking the vacuum. The organic EL layer 15 was formed by forming a film. During film formation, the internal pressure of the vacuum chamber was reduced to 1 × 10 ⁻⁴ Pa. The electron transport layer was formed by laminating 40 nm of Alq3. The organic light emitting layer is composed of a host material 4,4′-bis (2,2′-diphenylvinyl) biphenyl (DPVBi), and a blue guest material 4,4′-bis [2- {4- (N, N-diphenylamino). ) Phenyl} vinyl] biphenyl (DPAVBi) 5% doped and laminated to 40 nm. The hole transport layer was formed by laminating 200 nm of α-NPD. A state where the organic EL layer 15 is formed is shown in FIG.

  Thereafter, in the vacuum preparation chamber, the wire mask was removed from the substrate holder, and a transparent electrode (ITO) was formed over the entire surface with a film thickness of 100 nm by sputtering to form a transparent second electrode. FIG. 4 (h) shows a state where the wire mask 17 is removed, and FIG. 4 (i) shows a state where the second electrode is formed.

(Production of color conversion filter substrate)
FIG. 6 is a schematic cross-sectional view showing an example of the manufacturing process of the color conversion filter substrate.

[Preparation of black matrix]
On a glass substrate 21 having a size of 500 mm × 500 mm × 0.50 mm, a color conversion filter unit corresponding to the light emitting unit (640 × RGB × 480) having the above pixel configuration was produced as follows.

  A resist resin containing a black pigment is applied on a Corning glass (0.7 mm thickness) as the glass substrate 21 by spin coating, patterning is performed by photolithography, and openings for forming color filters are formed. The black matrix 25 having a film thickness of 2 μm was patterned with a width of 0.100 mm between the sub-pixels and a width of 0.116 mm between the pixels.

[Production of color filters]
After applying a blue filter material (Fuji Film: Color Mosaic CB-7001) by spin coating, patterning is performed by photolithography to form a line pattern with a 0.780 mm pitch and a film thickness of 2 μm. Got. Next, after applying a green filter material (manufactured by Fuji Film: Color Mosaic CG-7001) by a spin coating method, patterning is performed by a photolithographic method to form a green filter pattern having a 0.780 mm pitch and a film thickness of 2 μm. A green filter 23 was obtained. Next, after applying a red filter material (Fuji Film: Color Mosaic CR-7001) by spin coating, patterning is performed by photolithography to form a red filter pattern having a 0.780 mm pitch and a film thickness of 2 μm. A red filter 22 was obtained.

[Production of green conversion filter]
Coumarin 6 (0.7 parts by weight) as a fluorescent dye was dissolved in 120 parts by weight of a solvent, propylene glycol monoethyl acetate (PGMEA). 100 parts by weight of a photopolymerizable resin “V259PA / P5” (trade name, Nippon Steel Chemical Industry Co., Ltd.) was added to the solution and dissolved to obtain a coating solution. This coating solution is applied onto a coning glass (645 mm × 845 mm × 1.1 mm) as a transparent substrate using a spin coating method, and patterned by a photolithographic method, with a 0.780 mm pitch and a film thickness of 10 μm. A green conversion filter 27 was obtained.

[Production of red conversion filter]
Coumarin 6 (0.6 parts by weight), rhodamine 6G (0.3 parts by weight) and basic violet 11 (0.3 parts by weight) are dissolved in 120 parts by weight of propylene glycol monoethyl acetate (PGMEA) as a solvent. It was. 100 parts by weight of photopolymerizable resin [V259PA / P5] (trade name, Nippon Steel Chemical Industry Co., Ltd.) was added and dissolved to obtain a coating solution. This coating solution is applied onto a coning glass (645 mm × 845 mm × 1.1 mm) as a transparent substrate using a spin coating method, and patterned by a photolithographic method, with a 0.780 mm pitch and a film thickness of 10 μm. A red conversion filter 26 was obtained.

[Production of gas barrier layer]
On this fluorescence conversion filter, a UV curable resin (epoxy-modified acrylate) was applied as a gas barrier layer 28 by a spin coating method and irradiated with a high-pressure mercury lamp to form a film thickness of 5 μm on the entire surface of the substrate. At this time, the pattern of the fluorescence conversion filter was not deformed, and the upper surface of the protective layer was flat.

  The color conversion filter substrate 200 was formed as described above.

  The organic light-emitting element substrate 100 obtained as described above and the color conversion filter substrate 200 provided with the red color conversion layer and the green color conversion layer are placed under a dry nitrogen atmosphere (both oxygen and moisture concentrations are 10 ppm or less). Sealed with a UV curable adhesive 29.

  Although FIG. 7 shows a case where an epoxy thermosetting resin is put as the filler 30 between the organic light emitting element substrate 100 and the color conversion filter substrate 200, a nitrogen atmosphere may be used without the filler 30. .

  The organic EL device obtained in this way can form uniform light emission since the auxiliary cathode is formed on the upper transparent electrode, so that the voltage drop when the current flows in the horizontal direction can be minimized. It was. Further, when this organic EL element is driven by an active matrix method, it becomes possible to provide high luminance and high luminous efficiency without increasing the driving voltage.

  In addition, since a concave portion serving as a guide for the wire mask is provided on the auxiliary electrode by a simple method, the yield is not reduced by wire displacement, and the productivity is improved.

<Example 2>
In place of the positive photoresist [WIX-2A], an organic EL element is formed in the same manner as in Example 1 except that a silicon oxide film is used as an interlayer insulating film, and dry etching is used for patterning of the silicon oxide film and forming a recess. I did it. Formation of the silicon oxide film and predetermined pattern formation were performed as follows.

The silicon oxide film pattern is formed by applying a positive resist (manufactured by Tokyo Ohka Kogyo Co., Ltd .: TFR-1250), performing exposure and development using a mask having a predetermined pattern to form a resist pattern, and then a sputtering apparatus. Was used to form a film having a thickness of 1.0 μm. The conditions at that time were a single crystal silicon target, a sputtering gas having a partial pressure ratio of argon and oxygen of 1: 1 as a sputtering gas, and a power of 2.5 kW and a gas pressure of 0.5 Pa. Next, in order to process the interlayer insulating film into a predetermined shape, a positive resist (manufactured by Tokyo Ohka Kogyo Co., Ltd .: TFR-1250) is applied, exposed and developed using a mask of a predetermined pattern, and a resist pattern Formed. Thereafter, the silicon oxide film as an interlayer insulating film was dry etched with a dry etching apparatus. The conditions were SF ₆ gas / CHF ₃ gas / argon flow ratio of 2: 1: 1, gas pressure of 100 Pa, and applied power of 1.5 kW. Thereafter, the resist was removed by ashing under the conditions of oxygen gas 500 SCCM, gas pressure 20 Pa, and applied power 2 kW. In this case, a concave portion whose side wall is substantially vertical as compared with the first embodiment is obtained, but a wire in which a part of the wire enters the opening may be used.

  Like the organic EL element obtained in Example 1, the obtained organic EL element can minimize the voltage drop when a current flows in the horizontal direction, so that uniform light emission can be obtained. Further, when this organic EL element is driven by an active matrix method, it becomes possible to provide high luminance and high luminous efficiency without increasing the driving voltage. Moreover, this organic EL element did not have a decrease in yield due to wire misalignment as in the organic EL element obtained in Example 1, and the productivity was improved.

  According to the manufacturing method of the present invention, it becomes possible to manufacture an organic EL element that emits light uniformly and has high luminance and high luminous efficiency with high productivity.

It is a cross-sectional schematic diagram which shows an example of the structure of the organic EL element of this invention. It is a cross-sectional schematic diagram which shows the state which installed the wire mask. It is a plane schematic diagram which shows the state which installed the wire mask. It is a cross-sectional schematic diagram which shows an example of the manufacturing process of an organic EL element. It is a cross-sectional schematic diagram which shows the state which installed the rectangular wire mask. It is a schematic cross section which shows an example of the manufacturing process of a color conversion filter board | substrate. It is a schematic cross section which shows an example of the state which bonded together the organic light emitting element board | substrate and the color conversion filter board | substrate.

Explanation of symbols

10 TFT substrate 11 First electrode 12 Interlayer insulating film 13 Recess 14 Metal film (auxiliary electrode)
DESCRIPTION OF SYMBOLS 15 Organic EL layer 16 2nd electrode 17 Wire mask 18 Pixel area opening part 19, 21 Glass substrate 22 Red filter 23 Green filter 24 Blue filter 25 Black matrix 26 Red conversion filter 27 Green conversion filter 28 Gas barrier layer 29 UV hardening adhesive 30 Filler 100 Organic light emitting device substrate 200 Color conversion filter substrate

Claims (4)

  A method of manufacturing an organic EL element in which a plurality of pixels are formed on a substrate on which a plurality of TFTs are formed, wherein the organic EL element is opposed to a first electrode that defines a pixel region and a first electrode. A transparent second electrode provided; and an organic EL layer sandwiched between the first electrode and the second electrode, wherein an end of the first electrode is covered with an insulating film, and the second electrode Is a top emission type organic EL element connected to the metal film patterned on the insulating film, the step of forming the metal film pattern on the insulating film, and overlapping the formed metal film pattern A step of installing the wire mask in a tensioned state, a step of forming an organic EL layer on the entire surface of the substrate on which the wire mask is installed, a step of removing the wire mask from the substrate on which the organic EL layer is formed, and a wire Full board surface excluding mask The method for manufacturing an organic EL device, characterized in that it comprises a step of forming a second electrode.   The method of manufacturing an organic EL element according to claim 1, wherein the cross-sectional shape of the metal film pattern is a shape having a recess.   The method of manufacturing an organic EL element according to claim 1, wherein the insulating film has a cross-sectional shape having a recess.   The organic EL according to any one of claims 1 to 3, wherein the wire mask is developed along a concave groove formed of a concave portion having the cross-sectional shape of the metal film in a state where tension is applied. Device manufacturing method.

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