JP2001077223A - Electronic component housing container - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic component housing container where an electronic part is sealed airtight inside the vessel comprising an insulating base body and a lid, causing no deterioration in characteristics, for correct and stable operation of the electronic component over an extended period. SOLUTION: An insulating base body 1 on which an electronic part 3 is mounted, a lid body 2 which is so jointed via a sealing material 8 for enclosing the mounting component, and a wiring conductor layer 5, where being formed from near the mounting part to the outside of joint with the lid body 2 on the surface of the insulating base body 1, an electrode of the electronic component 3 is connected electrically to one end on the mounting side, while an external electric circuit to the other end side, are provided. Here, related to the wiring conductor layer 5, the joint with the lid body 2 is coated with a glass layer 10, while an exposed surface except for the joint is coated with a gold- plated layer 9a. Thus, the electronic component 3 is housed airtight inside a vessel 4, comprising the insulating base body 1 and the lid body 2 via the sealing material 8.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component storage container for hermetically sealing and storing electronic components such as semiconductor elements and piezoelectric vibrators. The present invention relates to a container for storing electronic components.

[0002]

2. Description of the Related Art Conventionally, electronic component storage containers for storing electronic components such as semiconductor devices including semiconductor integrated circuit devices or piezoelectric vibrators such as crystal vibrators and surface acoustic wave devices have been made of, for example, aluminum oxide. A concave portion for accommodating an electronic component in a substantially central portion of an upper surface or a lower surface thereof, and a plurality of high melting point metals such as tungsten and molybdenum drawn out from the periphery of the concave portion to the lower surface. An insulating base having a metallized wiring conductor layer; an external lead terminal attached to the metallized wiring conductor layer via a brazing material such as silver brazing to electrically connect the electronic component to an external electric circuit; It is composed of

If the electronic component is, for example, a semiconductor device, the semiconductor device is formed of glass,
The electrodes of the semiconductor element and the metallized wiring conductor layer are electrically connected to each other through an electrical connection means such as a bonding wire, and then the insulating substrate is fixed. A lid is bonded to the upper surface of the semiconductor device via a sealing material made of low-melting glass, and the semiconductor element is hermetically housed in a container formed of the insulating base and the lid, thereby forming a semiconductor device as a final product.

When the electronic component is a piezoelectric vibrator, for example, one end of the piezoelectric vibrator is bonded and fixed to a step formed on the bottom surface of the concave portion of the insulating base via an adhesive made of a conductive epoxy resin or the like. At the same time, the electrodes of the piezoelectric vibrator are electrically connected to the metallized wiring conductor layer, and then the lid is joined to the upper surface of the insulating base via a sealing material made of low melting point glass. An electronic component device as a final product is obtained by hermetically housing the piezoelectric vibrator in a container formed of the following.

In this conventional electronic component storage container, tungsten, molybdenum, etc. forming the wiring conductor layer have poor wettability with the brazing material, and external lead terminals, bonding wires, etc. are firmly bonded to the wiring conductor layer. Therefore, nickel or gold having excellent corrosion resistance and good wettability with the brazing material is generally applied to the surface of the wiring conductor layer by plating.

[0006]

However, a sealing material made of a low melting point glass for joining an insulating base and a lid in a conventional electronic component storage container is required to improve wettability with a brazing material. There was a drawback that the adhesion to the gold plating layer adhered to the wiring conductor layer by the plating method was poor, and it was difficult to firmly join the gold plating layer.

Due to this drawback, when the wiring conductor layer on which the gold plating layer is applied is formed from the vicinity of the electronic component mounting portion on the surface of the insulating base to the outside of the joint region with the lid, the insulating layer is insulated. It is difficult for the sealing material for joining the base and the lid to be firmly and air-tightly joined to the gold plating layer applied to the wiring conductor layer, and the hermetic sealing of the container composed of the insulating base and the lid is difficult. The reliability of the electronic component is reduced, and as a result, there is a problem that the electronic component cannot be operated normally and stably for a long period of time.

The present invention has been devised in view of the problems of the prior art, and has as its object to hermetically seal an electronic component inside a container formed of an insulating base and a lid, and to improve the characteristics thereof. An object of the present invention is to provide an electronic component storage container capable of operating electronic components normally and stably for a long period of time without causing deterioration.

[0009]

According to the present invention, there is provided an electronic component storage container comprising: an insulating base having an electronic component mounting portion on an upper surface;
A lid joined to the upper surface of the insulating base via a sealing material made of low-melting glass so as to surround the mounting portion, and formed from near the mounting portion on the surface of the insulating base to outside of a bonding region with the lid; An electrode of the electronic component is provided at one end on the mounting portion side, and a wiring conductor layer to which an external electric circuit is electrically connected to the other end side, and the electronic component is hermetically sealed inside a container including an insulating base and a lid. An electronic component storage container for storing,
The wiring conductor layer is characterized in that the joint with the lid is a glass layer, and the exposed surface other than the joint is covered with a gold plating layer.

In the electronic component housing of the present invention, the insulating base and the lid are made of ceramics, and the glass layer is made of borosilicate glass as a main component and has a coefficient of thermal expansion of 5%.
It is characterized by being made of glass of 〜10 ppm / ° C.

Further, the electronic component storage container of the present invention comprises:
The sealing material is 50 to 65% by weight of lead oxide and 2 to 10% of boron oxide.
%, Lead fluoride 10 ~ 30% by weight, zinc oxide 1 ~ 6% by weight, bismuth oxide 10 ~ 20% by weight of glass component and 26 ~ 45% by weight of lead titanate compound And a filler.

Further, in the electronic component storage container according to the present invention, the glass is 55 to 65% by weight of silicon oxide, 18 to 28% by weight of boron oxide, 4 to 10% by weight of sodium oxide, and 4 to 10% by weight of aluminum oxide. 2 to 8% by weight, potassium oxide is 1 to 6
Weight%, lithium oxide 1-6 weight%, barium oxide
It is characterized by comprising 0.5 to 3% by weight of glass.

According to the electronic component storage container of the present invention, since the bonding portion between the wiring conductor layer and the lid on the surface of the insulating base is covered with the glass layer, the gold plating layer is formed between the wiring conductor layer and the lid. Adhesion to the joint can be effectively prevented, and the sealing material mainly composed of low melting point glass and the wiring conductor layer can be firmly joined via the glass layer. As a result, the sealing material, the insulating base, and the lid are firmly joined to each other, so that the hermetic sealing of the container is completed, and the electronic components housed inside the container can operate normally and stably.

Furthermore, since the exposed surface of the wiring conductor layer other than the joint covered with the glass layer is covered with a gold plating layer having good conductivity, corrosion resistance and good wettability with the brazing material, The oxidation corrosion of the wiring conductor layer can be effectively prevented, and the connection between the wiring conductor layer and the bonding wire and the brazing between the wiring conductor layer and the external lead terminals can be made extremely strong.

Further, according to the electronic component storage container of the present invention, the insulating base and the lid are made of ceramics, and the glass layer is made of borosilicate glass as a main component and has a coefficient of thermal expansion of 5 to 10 p.
When glass of pm / ° C. is used, the coefficient of thermal expansion of the glass layer is close to the coefficients of thermal expansion of the insulating base and the lid made of ceramics. Can be joined. As a result, the insulating base and the lid can be firmly joined to each other via the sealing material, the hermetic sealing of the container is completely completed, and the electronic components housed inside the container can be normally and for a long time. It is possible to operate stably.

Further, according to the electronic component storage container of the present invention, when the sealing material for hermetically sealing the container consisting of the insulating base and the lid is made of the above-mentioned predetermined component composition, the softening and melting Since the temperature is 320 ° C or lower and the temperature is low, when the electronic components are hermetically stored inside the container consisting of the insulating base and the lid, the heat for melting the sealing material acts on the electronic components contained therein. However, the characteristics of the electronic component do not deteriorate, and as a result, the electronic component can be operated normally and stably for a long period of time.

Further, according to the electronic component container of the present invention, when the glass covering the wiring conductor layer is made of the above-mentioned predetermined component composition, the glass has excellent chemical resistance, and When the gold plating layer is applied to the exposed surface of the conductor layer by the plating method, it is not eroded by the plating solution, so when the gold plating layer is applied by the plating method to the exposed surface of the wiring conductor layer, The gold-plated layer does not adhere to the joint of the wiring conductor layer covered with the glass layer and the lid, and the insulating base and the lid can be firmly joined via the sealing material, The container is completely airtightly sealed, and the semiconductor element housed in the container can be operated normally and stably.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a sectional view showing an example of an embodiment of an electronic component storage container according to the present invention, and FIG. 2 is an enlarged sectional view of a main part thereof. These figures show examples in which the electronic component is a semiconductor element and the container for storing the electronic component is a package for storing a semiconductor element.

In these figures, 1 is an insulating base, and 2 is a lid. The semiconductor element 3 is formed by the insulating base 1 and the lid 2.
Is configured.

The insulating substrate 1 is provided with a recess 1a for forming a cavity for accommodating the semiconductor element 3 at a substantially central portion of the upper surface thereof, and the semiconductor element 3 is formed of glass, resin, solder, or the like on the bottom of the recess 1a. It is bonded and fixed via an adhesive made of a material or the like.

The insulating base 1 is made of ceramics, that is, an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, a silicon carbide sintered body, or the like. For example, if it is made of an aluminum oxide sintered body, a suitable organic binder, a solvent, a plasticizer, a dispersant, and the like are added to raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide, and the mixture is mixed. A ceramic green sheet (ceramic green sheet) is obtained by forming the product into a sheet shape by employing a sheet forming method such as a doctor blade method or a calender roll method which is well known in the art. It is manufactured by subjecting an appropriate punching process to a plurality of sheets, laminating a plurality of the sheets, and firing at a high temperature of about 1600 ° C.

The insulating substrate 1 has a plurality of wiring conductor layers 5 formed from the periphery of the concave portion 1a to the outer side thereof.
Each electrode of the semiconductor element 3 is electrically connected to the periphery of the concave portion 1a of the wiring conductor layer 5 via a bonding wire 6, and further connected to an external electric circuit at a portion led out of the insulating base 1. The external lead terminals 7 are attached via a brazing material such as silver brazing.

The wiring conductor layer 5 functions as a conductive path when each electrode of the semiconductor element 3 is electrically connected to an external electric circuit, and is formed of a high melting point metal such as tungsten, molybdenum, and manganese.

The wiring conductor layer 5 is made of a metal paste obtained by adding a suitable organic solvent, solvent, plasticizer and the like to a high melting point metal powder such as tungsten, molybdenum, manganese or the like, and forming a thick film by a conventionally known screen printing method or the like. A method is adopted in which a ceramic green sheet serving as the insulating base 1 is printed and applied in advance, and is fired at the same time as the ceramic green sheet. .

On the other hand, the external lead terminals 7 brazed to the wiring conductor layer 5 serve to connect the semiconductor element 3 housed in the container 4 to an external electric circuit, and connect the external lead terminals 7 to the external electric circuit. By being connected, the semiconductor element 3 accommodated inside is electrically connected to an external electric circuit via the bonding wire 6, the wiring conductor layer 5, and the external lead terminal 7.

The external lead terminals 7 are made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, and these ingots are subjected to a conventionally known metal working method such as a rolling method or a punching method. Thereby, it is formed in a predetermined shape.

The external lead terminal 7 has nickel on its surface.
If a metal having good conductivity and excellent corrosion resistance, such as gold, is applied to a thickness of 1 to 20 μm by plating, oxidation corrosion of the external lead terminals 7 can be effectively prevented and external leads can be prevented. Good electrical connection between the terminal 7 and the external electric circuit can be achieved. Therefore, the external lead terminals 7 are plated with nickel, gold, or the like on the surface by plating method to have a thickness of 1 to 20 μm.
It is preferable that the film is adhered to a thickness of 10 mm.

Further, the insulating substrate 1 to which the external lead terminals 7 are attached has a lid 2 bonded to the upper surface of the insulating substrate 1 via a sealing material 8, thereby forming a container 4 comprising the insulating substrate 1 and the lid 2.
The semiconductor element 3 is housed in an airtight manner.

The lid 2 has a function of closing the concave portion 1a provided in the insulating base 1, and is made of ceramics, that is, aluminum oxide sintered body, aluminum nitride sintered body, silicon nitride sintered body, silicon carbide sintered body. And an electrically insulating material such as a mullite sintered body. For example, in the case of an aluminum oxide-based sintered body, raw material powders such as aluminum oxide, silicon nitride, magnesium oxide, and calcium oxide are filled into a predetermined press mold and pressed at a constant pressure to be molded. It is manufactured by firing a molded article at a temperature of about 1500 ° C.

As shown in FIG. 2, the wiring conductor layer 5 has a glass layer 10 at the junction with the cover 2 of the wiring conductor layer 5 on the surface of the insulating base 1 and an exposed surface other than the junction at the gold plating layer 9a. It is covered with.

The glass layer 10 covering the joint between the wiring conductor layer 5 and the lid 2 is made of an insulating substrate without the sealing material 8 coming into contact with the gold plating layer 9 a having poor adhesion to the sealing material 8. 1 and the lid 2 can be sealed and joined. As a result, the insulating base 1 and the lid 2 are firmly joined together with the sealing material 8 therebetween, so that the hermetic sealing of the container 4 is completed, and the semiconductor element 3 accommodated in the container 4 can be kept normal and long-term. It is possible to operate stably.

The glass layer 10 is formed by previously applying glass serving as the glass layer 10 to the bonding portion of the wiring conductor layer 5 with the lid 2 by using a conventionally known screen printing method or the like. The lid 2 of the wiring conductor layer 5 is melted at a temperature.
To the joint.

The gold plating layer 9a covering the exposed surface other than the joint portion has good conductivity, good corrosion resistance and good wettability with the brazing material, and effectively prevents oxidative corrosion of the wiring conductor layer 5. In addition, the connection between the wiring conductor layer 5 and the bonding wires 6 and the brazing between the wiring conductor layer 5 and the external lead terminals 7 can be made extremely strong.

The gold plating layer 9 a is formed on the cover 2 of the wiring conductor layer 5.
After covering the bonding portion with the glass layer 10, a conventionally known electrolytic plating method or electroless plating method, specifically, the insulating substrate 1
Is immersed in a gold plating bath and an electric field is applied to the wiring conductor layer 5 to deposit gold on the exposed surface of the wiring conductor layer 5 so as to be coated to a thickness of 0.5 to 10 μm.

If the nickel plating layer 9b is applied as a base plating layer of the gold plating layer 9a to a thickness of 1 to 10 μm, the bonding between the wiring conductor layer 5 and the gold plating layer 9a can be strengthened. can do. Therefore, it is preferable that a nickel plating layer 9b is applied to the exposed surface of the wiring conductor layer 5 as a base plating layer of the gold plating layer 9a to a thickness of 1 to 10 μm.

The sealing between the insulating base 1 and the lid 2 may be performed as follows. A glass layer 10 is provided at the joint of the wiring conductor layer 5 and the cover 2, and a sealing material is provided at a joint area between the insulating base 1 having an exposed surface other than the joint and the gold plating layer 9 a and the cover 2. 8 is applied in advance by using a conventionally known screen printing method or the like, and then the semiconductor element 3 is bonded and fixed to the concave portion 1a inside the insulating base 1 with an adhesive. Thereafter, the bonding surfaces of the insulating base 1 and the lid 2 are bonded to each other and bonded at the softening and melting temperature of the sealing material 8 to thereby form the insulating base 1 and the lid 2.
Can be hermetically bonded and sealed.

Further, the insulating substrate 1 and the lid 2 are made of ceramics, and the glass layer 10 is made of glass having a thermal expansion coefficient of 5 to 10 ppm / ° C. containing borosilicate glass as a main component. The expansion coefficient and the thermal expansion coefficient of the insulating base 1 and the lid 2 made of ceramics are close to each other, and the glass layer
10 can be firmly joined to the insulating base 1, whereby the insulating base 1 and the lid 2 can be firmly joined via the sealing material 8. As a result, the container 4 is completely airtightly sealed, and the electronic component 3 housed inside the container 4 can be operated normally and stably for a long period of time.

The glass layer 10 has a coefficient of thermal expansion of 5 ppm.
If it is less than 10 / ° C or greater than 10 ppm / ° C, the glass layer 10
Of the insulating substrate 1 and the lid 2, the glass layer 10 tends to be unable to be firmly joined to the insulating substrate 1. Therefore, the coefficient of thermal expansion of the glass layer 10 is preferably in the range of 5 to 10 ppm / ° C.

The sealing material 8 for joining and sealing the insulating base 1 and the lid 2 is composed of 50 to 65% by weight of lead oxide, 2 to 10% by weight of boron oxide, and 10 to 30% by weight of lead fluoride. %, Zinc oxide is 1%
It is composed of a glass component of about 6% by weight, bismuth oxide of 10 to 20% by weight, and a filler of a lead titanate compound having a content of 26 to 45% by weight.

The coefficient of thermal expansion of the sealing material 8 can be approximated to the coefficient of thermal expansion of the insulating base 1 and the lid 2, thereby firmly joining the sealing material 8 to the insulating base 1 and the lid 2. Thus, the hermetic sealing of the container 4 can be made almost complete, so that the semiconductor element 3 housed in the container 4 can be normally and stably operated for a long period of time.

Furthermore, since the softening and melting temperature of the sealing material 8 for hermetically sealing the container 4 composed of the insulating base 1 and the lid 2 is 320 ° C. or lower and low, the insulating base 1 and the lid 2 When the semiconductor element 3 is hermetically accommodated in the container 4 made of
Semiconductor element 3 in which heat for melting sealing material 8 is housed.
Does not cause the characteristics of the semiconductor element 3 to deteriorate, and as a result, the semiconductor element 3 can be operated normally and stably for a long period of time.

When the amount of lead oxide is less than 50% by weight, the glass component of the sealing material 8 has a high softening / melting temperature of the glass, and the heat generated when the container 4 is hermetically sealed is heated by the semiconductor element 3. Tend to cause deterioration of the characteristics of the above. On the other hand,
If the content exceeds 65% by weight, the chemical resistance of the glass decreases, and the container 4
, The reliability of hermetic sealing tends to be greatly reduced. Therefore, the amount of lead oxide is preferably in the range of 50 to 65% by weight.

On the other hand, if the amount of boron oxide is less than 2% by weight, the crystallization of the glass proceeds, the fluidity decreases, and the hermetic sealing of the container 4 tends to be difficult. On the other hand, if it exceeds 10% by weight, the softening / melting temperature of the glass increases, and the heat generated when the container 4 is hermetically sealed tends to deteriorate the characteristics of the semiconductor element 3. Therefore, the amount of boron oxide is preferably in the range of 2 to 10% by weight.

If the amount of lead fluoride is less than 10% by weight, the softening and melting temperature of the glass becomes high, and the heat at the time of hermetically sealing the container 4 tends to cause deterioration of the characteristics of the semiconductor element 3. There is. On the other hand, if the content exceeds 30% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 4 tends to greatly decrease. Therefore, the amount of lead fluoride is 10 ~
A range of 30% by weight is preferred.

When the amount of zinc oxide is less than 1% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 4 tends to greatly decrease. On the other hand, if it exceeds 6% by weight, the crystallization of the glass proceeds, the fluidity is greatly reduced, and the hermetic sealing of the container 4 tends to be difficult. Therefore, the amount of zinc oxide is preferably in the range of 1 to 6% by weight.

If the amount of bismuth oxide is less than 10% by weight, the softening and melting temperature of the glass becomes high, and the heat at the time of hermetically sealing the container 4 tends to cause deterioration of the characteristics of the semiconductor element 3. is there. On the other hand, if it exceeds 20% by weight, the crystallization of the glass proceeds, the fluidity is greatly reduced, and the hermetic sealing of the container 4 tends to be difficult. Therefore, the amount of bismuth oxide is preferably in the range of 10 to 20% by weight.

The filler made of a lead titanate-based compound adjusts the thermal expansion coefficient of the sealing material 8, firmly bonds the sealing material 8 to the insulating base 1 and the lid 2, and improves the reliability of hermetic sealing of the container 4. It has the effect of greatly improving the performance and improving the mechanical strength of the sealing material 8. 26% by weight of this filler
If it is less than the above, the mechanical strength of the sealing material 8 is reduced and the thermal expansion coefficient of the sealing material 8 is greatly different from the thermal expansion coefficients of the insulating base 1 and the lid 2. In addition, there is a tendency that it cannot be firmly joined to the lid 2. On the other hand, if it exceeds 45% by weight, the softening / melting temperature of the sealing material 8 is increased, the fluidity is greatly reduced, and the hermetic sealing of the container 4 tends to be difficult. Therefore, the sealing material 8
Is preferably in the range of 26 to 45% by weight.

Glass layer 10 mainly composed of borosilicate glass
Is 55-65% by weight of silicon oxide, 18-28% by weight of boron oxide, 4-10% by weight of sodium oxide, 2-8% by weight of aluminum oxide, 1-6% by weight of potassium oxide, and lithium oxide 1 to 6% by weight, barium oxide 0.5 to 3% by weight
Made of glass.

This glass is excellent in chemical resistance, and is not corroded by the plating solution when the gold plating layer 9a is applied to the exposed surface of the wiring conductor layer 5 by plating. As a result, when the gold plating layer 9a is applied to the exposed surface of the wiring conductor layer 5 by the plating method, the gold plating layer 9a is formed at the joint between the wiring conductor layer 5 covered with the glass layer 10 and the lid 2. Without being adhered, the insulating base 1 and the lid 2 can be firmly joined via the sealing material 8, and the container 4 is completely airtightly sealed and housed inside the container 4. Semiconductor element 3
Can be operated normally and stably.

When the amount of silicon oxide in the glass is less than 55% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 4 tends to decrease. On the other hand,
If it exceeds 65% by weight, the softening and melting temperature of the glass increases,
The surface of the wiring conductor layer 5 is oxidized by the heat generated when the glass is softened and melted, and the reliability of the electrical connection between the wiring conductor layer 5 and the metal plating layer 9 tends to be reduced. Therefore, the amount of silicon oxide is preferably in the range of 55 to 65% by weight.

If the amount of boron oxide is less than 18% by weight, the softening and melting temperature of the glass increases, and the surface of the wiring conductor layer 5 is oxidized by the heat generated when the glass is softened and melted. There is a tendency that the reliability of the electrical connection between the metal layer 5 and the metal plating layer 9 is reduced. On the other hand, if it exceeds 28% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 4 tends to decrease. Therefore, the amount of boron oxide is preferably in the range of 18 to 28% by weight.

When the amount of sodium oxide is less than 4% by weight, the softening and melting temperature of the glass increases, and the surface of the wiring conductor layer 5 is oxidized by the heat of softening and melting the glass. There is a tendency that the reliability of the electrical connection with the metal plating layer 9 is reduced. On the other hand, if it exceeds 10% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 4 tends to decrease. Therefore, the amount of sodium oxide is preferably in the range of 4 to 10% by weight.

If the amount of aluminum oxide is less than 2% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 4 tends to decrease. On the other hand, if it exceeds 8% by weight, the softening and melting temperature of the glass increases, and the surface of the wiring conductor layer 5 is oxidized by the heat generated when the glass is softened and melted, and the electric connection between the wiring conductor layer 5 and the metal plating layer 9 is increased. There is a tendency that the reliability of dynamic connection is reduced. Therefore, the amount of aluminum oxide is preferably in the range of 2 to 8% by weight.

If the amount of potassium oxide is less than 1% by weight, the softening and melting temperature of the glass increases, and the surface of the wiring conductor layer 5 is oxidized by the heat of softening and melting the glass,
There is a tendency that the reliability of the electrical connection between the wiring conductor layer 5 and the metal plating layer 9 is reduced. On the other hand, if it exceeds 6% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 4 tends to decrease. Therefore, the amount of potassium oxide is preferably in the range of 1 to 6% by weight.

If the amount of lithium oxide is less than 1% by weight, the softening / melting temperature of the glass increases, and the surface of the wiring conductor layer 5 is oxidized by the heat at the time of softening and melting the glass.
There is a tendency that the reliability of the electrical connection between the wiring conductor layer 5 and the metal plating layer 9 is reduced. On the other hand, if it exceeds 6% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 4 tends to decrease. Therefore, the amount of lithium oxide is preferably in the range of 1 to 6% by weight.

If the amount of barium oxide is less than 0.5% by weight, the softening and melting temperature of the glass increases, and the surface of the wiring conductor layer 5 is oxidized by the heat of softening and melting the glass. There is a tendency that the reliability of the electrical connection with the metal plating layer 9 is reduced. On the other hand, if it exceeds 3% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 4 tends to decrease. Therefore, the amount of barium oxide is preferably in the range of 0.5 to 3% by weight.

Further, if the thickness of the glass 10 layer is less than 10 μm, the bonding strength with the insulating substrate 1 tends to decrease, and the reliability of hermetic sealing of the container 4 tends to decrease. The mechanical strength of the glass layer 10 tends to decrease, and the reliability of hermetic sealing of the container 4 tends to decrease. Therefore, the thickness of the glass layer 10 is specified in the range of 10 to 100 μm.

Thus, according to the above-described package for accommodating a semiconductor element, the semiconductor element 3
Is bonded and fixed via an adhesive made of glass, resin, brazing material or the like, and each electrode of the semiconductor element 3 is connected to the wiring conductor layer 5.
Are electrically connected to each other via a bonding wire 6, and then the cover 2 is formed on the upper surface of the insulating base 1 so as to cover the recess 1 a.
Are bonded via a sealing material 8, and the semiconductor element 3 is hermetically housed in a container 4 including the insulating base 1 and the lid 2, whereby a semiconductor device as a final product is completed.

Next, FIG. 3 is a sectional view showing another example of the embodiment of the electronic component storage container of the present invention. FIG. 1 shows an example in which the electronic component is a piezoelectric vibrator such as a crystal oscillator, and the electronic component housing is a piezoelectric oscillator housing.

In this figure, 11 is an insulating base, and 12 is a lid. The insulating base 11 and the lid 12 constitute a container 14 for housing the piezoelectric vibrator 13.

The insulating base 11 is provided on its upper surface with a concave portion 11a having a step for forming a space for accommodating the piezoelectric vibrator 13. The piezoelectric vibrator 13 is bonded and fixed to the step portion of the concave portion 11a via an adhesive made of resin.

The resinous adhesive is made of, for example, a conductive epoxy resin or the like, and the piezoelectric vibrator 13 is placed on the stepped portion of the concave portion 11a of the insulating base 11 via the adhesive. The piezoelectric vibrator 13 is bonded and fixed to the insulating base 11 by performing a process and performing thermosetting.

The insulating substrate 11 is made of ceramics, that is, an electrically insulating material such as a sintered body of aluminum oxide, a sintered body of mullite, a sintered body of aluminum nitride, a sintered body of silicon nitride, and a sintered body of silicon carbide. For example, if it is made of aluminum oxide sintered body, aluminum oxide
It is manufactured by filling raw material powders such as silicon oxide, magnesium oxide, potassium oxide, etc. into a predetermined press mold and pressing it at a constant pressure to mold it, and then firing this molded product at a temperature of about 1500 ° C. Is done.

A plurality of wiring conductor layers 15 are formed on the insulating base 11 from the stepped portion of the concave portion 11a to the outside. Each electrode of the piezoelectric vibrator 13 is electrically connected to a portion of the wiring conductor layer 15 located at the stepped portion of the concave portion 11a via an adhesive made of a conductive epoxy resin or the like. A wiring conductor of an external electric circuit is attached to the derived portion via a brazing material such as solder.

The wiring conductor layer 15 acts as a conductive path when each electrode of the piezoelectric vibrator 13 is electrically connected to an external electric circuit, and is made of a high melting point metal such as a mixture of silver and palladium or a mixture of silver and platinum. Is formed.

The wiring conductor layer 15 is made of a metal paste obtained by adding a suitable organic solvent, a solvent, a plasticizer or the like to a high melting point metal powder such as a mixture of silver and palladium or a mixture of silver and platinum. By applying a thick film technique such as a screen printing method to the fired insulating substrate 11 by printing and baking at a temperature of about 850 ° C., the insulating substrate 11 is adhered and formed in a predetermined pattern from the periphery to the outside of the concave portion 11a. .

Further, a lid 12 is bonded to the upper surface of the insulating base 11 to which the piezoelectric vibrator 13 is adhered and fixed via a sealing member 16, thereby forming a container comprising the insulating base 11 and the lid 12.
The piezoelectric vibrator 13 is housed in an airtight manner inside the 14.

The lid 12 is manufactured by the same method as the lid 2 described above.

Even when the electronic component is the piezoelectric vibrator 13, the bonding portion between the wiring conductor layer 15 on the surface of the insulating base 11 and the cover 12 is the glass layer 18, and the exposed surface other than the bonding portion is the gold plating layer. Coated with 17.

As in the case of the above-mentioned package for accommodating a semiconductor element, the glass layer 18 is made of glass which becomes the glass layer 18 at the joint of the wiring conductor layer 15 on the surface of the insulating base 11 and the lid 12 by a conventionally known screen printing. By applying a method or the like in advance and then melting at the melting temperature, the joint of the wiring conductor layer 15 and the lid 12 is covered.

The gold plating layer 17 is also coated on the exposed surface of the wiring conductor layer 15 by a conventionally well-known plating method. Also,
In order to make the bonding between the wiring conductor layer 15 and the gold plating layer 17 strong, it is preferable to apply a nickel plating layer as a base plating layer of the gold plating layer 17.

Further, the sealing between the insulating base 11 and the lid 12 is performed by bonding the glass layer 18 to the junction between the wiring conductor layer 15 and the lid 12.
However, an insulating substrate 11 having an exposed surface other than a joint portion covered with a gold plating layer 17 and a sealing material 16 are previously adhered to a joint region between the cover 12 and the cover member 12 by employing a conventionally known screen printing method or the like. Next, the piezoelectric vibrator 13 is bonded and fixed to the concave portion 11a having the step portion inside the insulating base 11 with an adhesive, and the bonding surface of the insulating base 11 and the lid 12 is pasted together to form a sealing material. The joining may be performed at a softening / melting temperature of 16.

The sealing material 16 is composed of a glass component and a filler, and has excellent moisture resistance. The penetration of moisture is effectively prevented, and as a result, the surface electrode of the piezoelectric vibrator 13 housed inside the container 14 is hardly oxidized and corroded, and the piezoelectric vibrator 13 can be operated normally. .

Thus, according to the electronic component storage container of the present invention, one end of the piezoelectric vibrator 13 is bonded and fixed to the stepped portion provided in the concave portion 11a of the insulating base 11 via an adhesive made of conductive epoxy resin or the like. At the same time, the respective electrodes of the piezoelectric vibrator 13 are electrically connected to the wiring conductor layer 15, and thereafter, the lid 12 is joined to the upper surface of the insulating base 11 via the sealing material 16 so as to cover the concave portion 11a, and the The piezoelectric vibrator 13 as a final product is completed by hermetically housing the piezoelectric vibrator 13 in a container 14 including the base 11 and the lid 12.

The present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention. For example, in the above-described example, an electronic component storage container for housing a semiconductor element or a piezoelectric vibrator has been described, but the present invention is also applicable to an electronic component storage container for housing a piezoelectric ceramic vibrator or a surface acoustic wave element. Applicable.

[0077]

According to the electronic component storage container of the present invention,
Since the joint portion between the wiring conductor layer and the lid on the surface of the insulating substrate is covered with the glass layer, the sealing material for joining the insulating substrate and the lid is a gold plating layer having poor adhesion to the sealing material. And the lid can be sealed and joined without contacting the insulating base. As a result, the sealing material, the insulating base, and the lid are firmly joined to each other, so that the hermetic sealing of the container is completed, and the electronic components housed inside the container can operate normally and stably.

Furthermore, since the exposed surface of the wiring conductor layer other than the joint covered with the glass layer is covered with a gold plating layer having good conductivity, corrosion resistance and good wettability with the brazing material, The oxidation corrosion of the wiring conductor layer can be effectively prevented, and the connection between the wiring conductor layer and the bonding wire and the brazing between the wiring conductor layer and the external lead terminals can be made extremely strong.

According to the electronic component housing of the present invention, the insulating base and the lid are made of ceramics, and the glass layer is made of borosilicate glass as a main component and has a coefficient of thermal expansion of 5 to 10 p.
Since the glass of pm / ° C. was used, the coefficient of thermal expansion of the glass layer was close to the coefficient of thermal expansion of the insulating substrate and the lid made of ceramics, whereby the glass layer containing borosilicate glass as a main component was strongly bonded to the insulating substrate. Can be joined. As a result, the insulating base and the lid can be firmly joined to each other via the sealing material, the hermetic sealing of the container is completely completed, and the electronic components housed inside the container can be normally and for a long time. It is possible to operate stably.

Further, according to the electronic component storage container of the present invention, since the softening and melting temperature of the sealing material for hermetically sealing the container consisting of the insulating base and the lid is 320 ° C. or lower, it is low. When an electronic component is hermetically accommodated in a container including an insulating base and a lid, even if heat for melting the sealing material acts on the electronic component accommodated therein, deterioration of the characteristics of the electronic component may be caused. As a result, the electronic component can be operated normally and stably for a long period of time.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of an electronic component storage container according to the present invention.

FIG. 2 is an enlarged sectional view of a main part of the electronic component storage container shown in FIG.

FIG. 3 is a cross-sectional view showing another example of the embodiment of the electronic component storage container of the present invention.

[Explanation of symbols]

 1, 11 ... Insulating base 2, 12 ... Lid 3 ... Semiconductor device (electronic component) 13 ... Piezoelectric vibrator (electronic component) 5, 15 ... wiring conductor layer 8, 16 ... sealing material 9a, 17 ... gold plating layer 10, 18 ..... glass layer

Claims (4)

[Claims] An insulating base having an electronic component mounting portion on an upper surface thereof; a lid joined to the upper surface of the insulating base via a sealing material made of low-melting glass so as to surround the mounting portion; It is formed from the vicinity of the mounting portion on the surface of the insulating base to the outside of the joint region with the lid. The electrode of the electronic component is electrically connected to one end of the mounting portion, and the external electric circuit is electrically connected to the other end. An electronic component storage container for airtightly storing the electronic component inside a container including the insulating base and the lid, wherein the wiring conductor layer is formed of A joint part is a glass layer, and an exposed surface other than the joint part is covered with a gold plating layer, respectively. 2. The method according to claim 1, wherein the insulating base and the lid are made of ceramics, and the glass layer is made of glass having a thermal expansion coefficient of 5 to 10 ppm / ° C. containing borosilicate glass as a main component. The container for storing electronic components according to claim 1. 3. The sealing material comprises 50 to 65% by weight of lead oxide, 2 to 10% by weight of boron oxide, and 10 to 3% by weight of lead fluoride.
0% by weight, zinc oxide 1-6% by weight, bismuth oxide 1
The electronic component storage container according to claim 1, comprising a glass component of 0 to 20% by weight and a filler of a lead titanate compound having a content of 26 to 45% by weight. 4. The glass comprises 55 to 65% by weight of silicon oxide, 18 to 28% by weight of boron oxide, 4 to 10% by weight of sodium oxide, 2 to 8% by weight of aluminum oxide,
4. The electronic component storage container according to claim 2, wherein the glass comprises 1 to 6% by weight of potassium oxide, 1 to 6% by weight of lithium oxide, and 0.5 to 3% by weight of barium oxide.