JP2000106409A - Electronic component container - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic component container capable of normally and stably actuating an electronic component for a long term by effectively avoiding the action of electromagnetic waves on an electronic component contained in a container also airtightly sealing the electronic component in the container without deteriorating the characteristics of the electronic component at all. SOLUTION: In an electronic component container composed of an insulating base substance 1 having a mounting part 1a mounting an electronic component 3 and an insulating cover body 2 so that the electronic component 3 may be airtightly contained in the container by junctioning the insulating base substance 1 with the insulating cover body 2 through the intermediary of a sealing material 8, the sealing material 8 made of a glassy ingredient containing inorganic filler and a metallic filler in larger particle diameter than that of the inorganic filler also to be coated on the whole surface on the insulating base substance 1 side of the insulating cover body 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component storage container for hermetically sealing and storing electronic components such as a semiconductor element and a piezoelectric vibrator. The present invention relates to a container for storing electronic components.

[0002]

2. Description of the Related Art Conventionally, electronic component storage containers for storing electronic components such as semiconductor devices including semiconductor integrated circuit devices or piezoelectric vibrators such as crystal vibrators and surface acoustic wave devices have been made of, for example, aluminum oxide. Having a concave portion for accommodating an electronic component at a substantially central portion of an upper surface or a lower surface thereof, and a plurality of high melting point metal powders such as tungsten and molybdenum from the concave portion to the lower surface. An insulating base on which a number of metallized wiring layers are formed and an external substrate attached to the metallized wiring layer via a brazing material such as silver brazing in order to electrically connect electronic components to an external electric circuit. It comprises a lead terminal and an insulating lid made of an electrically insulating material such as an aluminum oxide sintered body.

In the case where the electronic component is, for example, a semiconductor element, the semiconductor element is bonded and fixed to the bottom surface of the concave portion of the insulating base via an adhesive made of glass, resin, brazing material or the like. The electrode and the metallized wiring layer are electrically connected via an electrical connection means such as a bonding wire, and thereafter, the insulating lid is joined to the upper surface of the insulating base via a sealing material made of low-melting glass, A semiconductor device as a final product is obtained by hermetically housing a semiconductor element inside a container including an insulating base and an insulating lid.

When the electronic component is, for example, a piezoelectric vibrator, one end of the piezoelectric vibrator is bonded to a step formed on the bottom surface of the concave portion of the insulating base via an adhesive made of a conductive epoxy resin or the like. At the same time, the electrodes of the piezoelectric vibrator are electrically connected to the metallized wiring layer, and then the insulating lid is joined to the upper surface of the insulating base via a sealing material made of low-melting glass, thereby insulating the insulating base from the insulating base. An electronic component device as a final product is obtained by hermetically housing the piezoelectric vibrator in a container including a lid.

As a sealing material for joining the insulating base and the insulating lid, generally, 56 to 66% by weight of lead oxide, 4 to 14% by weight of boron oxide, 1 to 6% by weight of silicon oxide, Bismuth 0.5-5% by weight, zinc oxide 0.
Glasses containing 5 to 3% by weight of a glass component and 9 to 19% by weight of a cordierite-based compound as a filler and 10 to 20% by weight of a lead titanate-based compound are used.

[0006]

However, in this conventional electronic component storage container, a ceramic such as an aluminum oxide sintered body forming an insulating base and an insulating lid, and the insulating base and the lid are joined together. Any glass that hermetically seals electronic components inside is easily transmitted by electromagnetic waves, so when mounted together with other electronic components on an external electric circuit board or the like, mutual interference of electromagnetic waves occurs between adjacent electronic components and the There has been a problem that a component may malfunction. In particular, recently, electronic components have been mounted on an external electric circuit board at a very high density, and the distance between adjacent electronic components has become extremely small. The problem due to the mutual interference of electromagnetic waves has become extremely large. .

In this conventional electronic component storage container, the softening and melting temperature of the low-melting glass, which is a sealing material for bonding the insulating cover to the insulating base, is about 400 ° C .; Since the heat resistance has been reduced due to the high density and high integration, the insulating base and the insulating lid are joined via a sealing material, and the insulating container composed of the insulating base and the insulating lid is When the electronic components are housed in an airtight manner, the heat of melting the sealing material acts on the electronic components housed therein, causing deterioration of the characteristics of the electronic components, and the electronic components cannot be operated normally. There were also problems.

Further, when the electronic component is bonded and fixed to the bottom surface of the concave portion or the step portion of the insulating base via a resin adhesive made of a polyimide conductive resin or the like, the heat resistance of the adhesive for bonding and fixing the electronic component is reduced. Due to the low temperature, there is also a problem that when heat for melting the sealing material acts on the adhesive, the adhesive fixing of the electronic component is broken, and as a result, the electronic component cannot always be operated stably.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to effectively prevent electromagnetic waves from acting on electronic components housed inside a container, and to provide electronic components inside the container with its characteristics. An object of the present invention is to provide an electronic component storage container that can be hermetically sealed without causing deterioration and can operate electronic components normally and stably for a long period of time.

[0010]

SUMMARY OF THE INVENTION The present invention comprises an insulating base having an installation portion on which an electronic component is mounted, and an insulating lid.
An electronic component storage container formed by joining an insulating base and an insulating lid via a sealing material to hermetically accommodate electronic components therein, wherein the sealing material includes a glass component and an inorganic filler. And a metal filler having a particle size larger than that of the inorganic filler, and is covered on the entire surface of the insulating cover on the insulating substrate side.

The present invention is also characterized in that the average particle size of the metal filler is 2 to 10 times larger than the average particle size of the inorganic filler.

In the present invention, the glass component of the sealing material may be 50 to 65% by weight of lead oxide, 2 to 10% by weight of boron oxide, 10 to 30% by weight of lead fluoride, 1 to 6% by weight of zinc oxide, It is characterized by being made of glass containing 10 to 20% by weight of bismuth.

[0013] Further, in the present invention, the metal filler of the encapsulant is made of an iron-nickel alloy and / or an iron-nickel-cobalt alloy, the inorganic filler is made of a lead titanate compound, and the content of the metal filler is 5%. To 10% by weight, and the content of the inorganic filler is 26 to 45% by weight.

According to the electronic component storage container of the present invention, the sealing member for joining the insulating base and the insulating lid and hermetically sealing the electronic component inside the container including the insulating base and the insulating lid is provided. The glass component contains an inorganic filler and a metal filler having a larger particle diameter than the inorganic filler. The sealing material is not only the insulating region of the insulating cover but also the insulating region of the insulating cover. Since it was attached to the entire surface on the base side, the insulating base and the insulating lid were joined via a sealing material,
When the electronic components are housed and sealed in an airtight manner, the electronic components housed inside are shielded by the conductive sealing material. As a result, external noise is prevented from entering through the insulating lid. The electronic components inside the container can be operated normally and stably for a long period of time.

Further, according to the electronic component storage container of the present invention, as a sealing material for joining the insulating base and the insulating lid,
A glass component containing 50 to 65% by weight of lead oxide, 2 to 10% by weight of boron oxide, 10 to 30% by weight of lead fluoride, 1 to 6% by weight of zinc oxide and 10 to 20% by weight of bismuth oxide, and titanium as an inorganic filler. 26 lead acid compounds
When a metal filler containing 5 to 10% by weight of an iron-nickel alloy and / or an iron-nickel-cobalt alloy is used as a metal filler, the softening and melting temperature of the sealing material becomes 350 ° C. or lower, and the insulating base and the insulating lid When the electronic component is air-tightly housed in a container formed of an insulating base and an insulating lid, the heat for melting the sealing material acts on the electronic component housed therein. However, the characteristics of the electronic component do not deteriorate, and as a result, the electronic component can be operated normally and stably for a long period of time.

At the same time, the softening and melting temperature of the sealing material is 350
° C or lower, and since the temperature is low, the insulating base and the insulating lid are joined via a sealing material, and when the electronic component is air-tightly housed in a container including the insulating base and the insulating lid, the sealing is performed. The resin component made of a polyimide conductive resin or the like that adheres and fixes the electronic component to the bottom surface or the step portion of the concave portion of the insulating base is not degraded by the heat of melting the stopper, and thereby the electronic component is attached to the insulating base. It is possible to extremely firmly adhere and fix the bottom surface or the step portion of the concave portion via the adhesive, and the electronic component can always be operated stably.

[0017]

Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view illustrating an example of an embodiment of an electronic component storage container according to the present invention, in which the electronic component is a semiconductor element and the electronic component storage container is a semiconductor element storage package. Is shown.

In FIG. 1, reference numeral 1 denotes an insulating base, and 2 denotes an insulating lid. The insulating base 1 and the insulating lid 2 constitute a container 4 for housing the semiconductor element 3.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, and has a recess 1 for forming a cavity for placing and housing the semiconductor element 3 at a substantially central portion of the upper surface thereof.
The semiconductor element 3 is attached to the bottom of the recess 1a via an adhesive such as epoxy resin.

When the insulating substrate 1 is made of an aluminum oxide sintered body, an appropriate organic binder, a solvent, a plasticizer, a dispersant and the like are added to raw material powders of aluminum oxide, silicon oxide, magnesium oxide, calcium oxide and the like. The slurry is mixed to form a slurry, and the slurry is formed into a sheet by using a sheet forming method such as a doctor blade method or a calender roll method, which is conventionally known, to obtain a ceramic green sheet (ceramic green sheet). The ceramic green sheet is manufactured by performing an appropriate punching process, laminating a plurality of the sheets, and firing at a high temperature of about 1600 ° C.

A plurality of metallized wiring layers 5 are formed on the insulating substrate 1 from the concave portion 1a to the lower surface, and each electrode of the semiconductor element 3 is provided at an end of the metallized wiring layer 5 on the concave portion 1a side. An external lead terminal 7 electrically connected via a bonding wire 6 and connected to an external electric circuit at a portion led out to the lower surface of the insulating base 1 is attached via a brazing material such as silver brazing. I have.

The metallized wiring layer 5 functions as a conductive path when each electrode of the semiconductor element 3 is electrically connected to an external electric circuit, and is formed of a refractory metal powder such as tungsten, molybdenum, and manganese.

The metallized wiring layer 5 is formed by mixing a metal paste obtained by adding a suitable organic solvent, solvent, plasticizer, etc. to a high melting point metal powder such as tungsten, molybdenum, manganese or the like by a conventionally known screen printing method or the like. Is applied in advance to a ceramic green sheet serving as the insulating base 1 by employing the thick film method described above, and is baked simultaneously with the ceramic green sheet to form a predetermined pattern from the concave portion 1a to the lower surface of the insulating base 1. Is done.

The metallized wiring layer 5 is formed by depositing a metal having good conductivity, corrosion resistance and good wettability with a brazing material such as nickel and gold on the surface thereof in a thickness of 1 to 20 μm by plating. In other words, it is possible to effectively prevent oxidation corrosion of the metallized wiring layer 5 and to make the connection between the metallized wiring layer 5 and the bonding wire 6 and the brazing between the metallized wiring layer 5 and the external lead terminals 7 extremely strong. Can be. Therefore, in order to prevent the metallized wiring layer 5 from being oxidized and corroded, and to make the connection between the metallized wiring layer 5 and the bonding wires 6 and the brazing between the metallized wiring layer 5 and the external lead terminals 7 firm, Nickel, gold, etc. on the surface of the plating by 1-20μ
m.

Further, the external lead terminals 7 brazed to the metallized wiring layer 5 serve to connect the semiconductor element 3 housed in the container 4 to an external electric circuit, and connect the external lead terminals 7 to the external electric circuit. As a result, the semiconductor element 3 housed inside is electrically connected to an external electric circuit via the bonding wire 6, the metallized wiring layer 5, and the external lead terminal 7.

The external lead terminal 7 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
It is formed in a predetermined shape by subjecting an ingot such as an iron-nickel-cobalt alloy to a conventionally known metal working method such as a rolling method or a punching method.

When the external lead terminal 7 is coated with a metal having good conductivity and excellent corrosion resistance, such as nickel or gold, to a thickness of 1 to 20 μm by plating, the external lead terminal 7 may be provided. 7 can be effectively prevented, and the electrical connection between the external lead terminal 7 and the external electric circuit can be made good. Therefore, it is preferable that nickel, gold, or the like be applied to the surface of the external lead terminal 7 by plating to a thickness of 1 to 20 μm.

Further, the insulating base 1 to which the external lead terminals 7 are attached is joined to the upper surface of an insulating lid 2 made of an electrically insulating material such as an aluminum oxide sintered body via a sealing material 8. As a result, the semiconductor element 3 is hermetically sealed inside the container 4 including the insulating base 1 and the insulating lid 2.

When the insulating lid 2 is made of an aluminum oxide sintered body, for example, an organic binder, a solvent, a plasticizer, a dispersant, etc. suitable for a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc. The raw material powder obtained by adding and mixing is pressed into a predetermined press mold and pressed at a constant pressure to form the molded product. Thereafter, the molded product is sintered at a temperature of about 1500 ° C.

The sealing material 8 for joining the insulating base 1 and the insulating lid 2 is made of conductive glass, for example, 50 to 65% by weight of lead oxide and 2 to 10% of boron oxide.
% Of lead fluoride, 10 to 30% by weight of lead fluoride, 1 to 6% by weight of zinc oxide, and 10 to 20% by weight of bismuth oxide.
6 to 45% by weight of iron-nickel alloy and / or iron-nickel-cobalt alloy as metal filler
% Is preferably used, and is previously attached to the insulating base 1 side of the insulating cover 2 in order to improve the sealing workability.

The sealing material 8 is applied to the insulating cover 2 by applying a glass containing an inorganic filler of a lead titanate compound and a metal filler of an iron-nickel alloy and / or an iron-nickel-cobalt alloy. An organic solvent and a glass paste obtained by adding and mixing a solvent are printed and applied to a predetermined thickness on the surface of the insulating cover 2 on the insulating substrate 1 side by a conventionally known screen printing method or the like.

Further, the conductive sealing material 8 is applied not only to the joining region between the insulating cover 2 and the insulating base 1 but also to the entire surface of the insulating cover 2 on the insulating base 1 side. Therefore, the concave portion 1a of the insulating base 1 for housing the semiconductor element 3 is shielded by the conductive sealing material 8, so that external noise can effectively enter through the insulating lid 2. Thus, the semiconductor element 3 inside the container 4 can be operated normally and stably for a long period of time.

At the same time, noise generated from the semiconductor element 3 and the like housed therein is effectively prevented from leaking to the outside via the insulating cover 2, and the noise generated by the semiconductor element 3 enters another device and malfunctions. The adverse effects such as are also minimized.

The conductive sealing material 8 is composed of 50 to 65% by weight of lead oxide, 2 to 10% by weight of boron oxide, 10 to 30% by weight of lead fluoride, and 1 to 6% of zinc oxide as glass components. When the glass containing 10 to 20% by weight of bismuth oxide is used, since the softening and melting temperature of the glass is as low as 350 ° C. or less, the insulating base 1 and the insulating lid 2 are formed using the sealing material 8. When joining and sealing the container 4 in an airtight manner, even if heat for melting the sealing material 8 acts on the semiconductor element 3 housed therein, the temperature is low, so that the characteristics of the semiconductor element 3 are deteriorated. However, the semiconductor element 3 can be operated normally and stably over a long period of time. At the same time, when the semiconductor element 3 is bonded and fixed to the concave portion 1a of the insulating base 1 via a resin adhesive, the resin adhesive has a softening / melting temperature of the sealing material 8 of 35.
Since the temperature is as low as 0 ° C. or less, the characteristics are not significantly deteriorated by the heat of softening and melting the sealing material 8, whereby the semiconductor element 3 can be extremely firmly adhered and fixed to the concave portion 1 a of the insulating base 1. Thus, the semiconductor element 3 can always be operated stably.

Further, the encapsulant 8 comprises 50 to 65% by weight of lead oxide, 2 to 10% by weight of boron oxide, 10 to 30% by weight of lead fluoride, 1 to 6% by weight of zinc oxide, and 10 to 10% by weight of bismuth oxide. When formed of glass containing 20% by weight, if the amount of lead oxide is less than 50% by weight, the softening / melting temperature of the glass becomes high, and the heat generated when the container 4 is hermetically sealed may affect the characteristics of the semiconductor element 3. If the content exceeds 65% by weight, the chemical resistance of the glass decreases, and the reliability of hermetic sealing of the container 4 is greatly reduced. Therefore, it is preferable that the amount of the lead oxide be in the range of 50 to 65% by weight.

If the amount of boron oxide is less than 2% by weight, the softening and melting temperature of the glass increases, and the heat generated when the container 4 is hermetically sealed causes deterioration of the characteristics of the semiconductor element 3. If the content exceeds 10% by weight, the chemical resistance of the glass is reduced, and the reliability of hermetic sealing of the container 4 is greatly reduced. Therefore, it is preferable that the amount of the boron oxide be in the range of 2 to 10% by weight.

If the amount of lead fluoride is less than 10% by weight, the softening and melting temperature of the glass increases, and the heat generated when the container 4 is hermetically sealed causes deterioration of the characteristics of the semiconductor element 3. If it exceeds 30% by weight, the chemical resistance of the glass is reduced, and the reliability of hermetic sealing of the container 4 is greatly reduced. Therefore, it is preferable that the amount of the lead fluoride be in the range of 10 to 30% by weight.

If the amount of zinc oxide is less than 1% by weight, the chemical resistance of the glass is reduced, and the reliability of hermetic sealing of the container 4 is greatly reduced. As the crystallization proceeds, the fluidity is greatly reduced, and it becomes difficult to hermetically seal the container 4. Therefore, it is preferable that the amount of the zinc oxide be in the range of 1 to 6% by weight.

If the amount of bismuth oxide is less than 10% by weight, the softening and melting temperature of the glass becomes high, and the heat at the time of hermetically sealing the container 4 causes the characteristics of the semiconductor element 3 to be deteriorated. On the other hand, if it exceeds 20% by weight, the crystallization of the glass proceeds and the fluidity is greatly reduced, making it difficult to hermetically seal the container 4. Therefore, the amount of bismuth oxide is preferably set in the range of 10 to 20% by weight.

The inorganic filler contained in the sealing material 8 adjusts the coefficient of thermal expansion of the sealing material 8 so that the sealing material 8 is firmly joined to the insulating base 1 and the insulating lid 2. Has a function of greatly improving the reliability of hermetic sealing and improving the mechanical strength of the sealing material 8, and a lead titanate-based compound is suitably used. If its content is less than 26% by weight, the sealing is performed. Since the thermal expansion coefficient of the stopper 8 is significantly different from the thermal expansion coefficients of the insulating base 1 and the insulating lid 2, the sealing material 8 is
In addition, it cannot be firmly joined to the insulating lid 2, and if it exceeds 45% by weight, the fluidity of the sealing material 8 is greatly reduced, and the hermetic sealing of the container 4 becomes difficult. Therefore, when the lead titanate-based compound is contained in the sealing material 8 as an inorganic filler, the amount is preferably in the range of 26 to 45% by weight.

The metal filler contained in the sealing material 8 has an effect of imparting conductivity to the sealing material 8, and an iron-nickel alloy and / or an iron-nickel-cobalt alloy is preferably used. Is less than 5% by weight, the conductivity of the sealing material 8 decreases, making it difficult to completely cover the entire surface of the insulating cover 2 on the insulating base 1 side with a conductive film.
If the content is more than 10% by weight, the fluidity of the sealing material 8 decreases, and it becomes difficult to hermetically seal the container 4. Therefore, when the iron-nickel alloy and / or the iron-nickel-cobalt alloy is contained in the sealing material 8 as a metal filler, the amount is 5%.
It is preferable to set it in the range of 20 to 20% by weight.

Further, when the conductive sealing material 8 contains an iron-nickel alloy and / or an iron-nickel-cobalt alloy as a metal filler, if the particle size of the metal filler is less than 30 μm, the sealing material is 8, it becomes difficult to effectively prevent external noise from entering the inside of the container 4 through the insulating lid 2, and if it exceeds 70 μm, the fluidity of the sealing material 8 decreases, It tends to be difficult to hermetically seal the container 4. Therefore, when the iron-nickel alloy and / or the iron-nickel-cobalt alloy is contained in the sealing material 8 as a metal filler, it is preferable that the particle size is in the range of 30 to 70 μm.

In the sealing material 8, the average particle diameter of the metal filler contained in the glass component is larger than the average particle diameter of the inorganic filler. At the time of application, the metal fillers of the sealing material 8 are reliably brought into contact with each other, so that the entire surface of the insulating lid 2 on the insulating base 1 side can be completely covered with the conductive film.

If the average particle size of the metal filler is less than twice the average particle size of the inorganic filler, the entire surface of the insulating cover 2 on the insulating substrate 1 side is completely covered with the conductive film. If the ratio exceeds 10 times, the fluidity of the sealing material 8 decreases, and the reliability of the hermetic sealing of the container 4 may be degraded. Therefore, it is preferable that the average particle diameter of the metal filler of the sealing material 8 is in a range of 2 to 10 times the average particle diameter of the inorganic filler.

Thus, according to the above-mentioned package for accommodating a semiconductor element, the semiconductor element 3 is bonded and fixed to the concave portion 1a of the insulating base 1 via an adhesive made of glass, resin, brazing material or the like, and each electrode of the semiconductor element 3 is connected. Metallized wiring layer 5
Is electrically connected to the insulating base 1 via a bonding material 6 so as to cover the concave portion 1 a on the upper surface of the insulating base 1. The semiconductor device 3 as a final product is completed by hermetically housing the semiconductor element 3 in the container 4 formed of the semiconductor device 3.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. Although the electronic component storage container for storing the electronic component is exemplified, the electronic component is a crystal oscillator, a surface acoustic wave element, or the like, and the present invention can be applied to an electronic component storage container for storing the electronic component.

Further, in the above-described example, the electronic component storage container in which the external lead terminals 7 are brazed to the metallized wiring layer 5 has been exemplified. However, the present invention is not limited to this, and the metallized wiring layer is formed on the lower surface of the insulating base. It may be a terminal that is derived and used as it is as a terminal that is directly connected to an external electric circuit.

[0048]

According to the electronic component storage container of the present invention,
The insulating base and the insulating lid are joined together, and a sealing material for hermetically sealing the electronic component inside the container composed of the insulating base and the insulating lid is made of an inorganic filler as a glass component and has a larger particle size than the inorganic filler. Since the sealing material is applied not only to the joint region between the insulating base and the insulating cover, but also to the entire surface of the insulating cover on the insulating base side, the insulating material is insulated from the insulating base. When the electronic component is hermetically sealed inside by joining the lid and the sealing member via a sealing material, the electronic component housed inside is shielded by the conductive sealing material. As a result, In addition, external noise can be effectively prevented from entering through the insulating lid, and the electronic components inside the container can be operated normally and stably for a long period of time.

According to the electronic component storage container of the present invention, as the sealing material for joining the insulating base and the insulating lid,
A glass component containing 50 to 65% by weight of lead oxide, 2 to 10% by weight of boron oxide, 10 to 30% by weight of lead fluoride, 1 to 6% by weight of zinc oxide and 10 to 20% by weight of bismuth oxide, and titanium as an inorganic filler. 26 lead acid compounds
When a metal filler containing 5 to 10% by weight of an iron-nickel alloy and / or an iron-nickel-cobalt alloy is used as a metal filler, the softening and melting temperature of the sealing material becomes 350 ° C. or less, and the insulating base and the insulating lid When the electronic component is air-tightly housed in a container formed of an insulating base and an insulating lid, the heat for melting the sealing material acts on the electronic component housed therein. However, the characteristics of the electronic component do not deteriorate, and as a result, the electronic component can be operated normally and stably for a long period of time.

At the same time, the softening and melting temperature of the sealing material is 350
° C or lower, and since the temperature is low, the insulating base and the insulating lid are joined via a sealing material, and when the electronic component is air-tightly housed in a container including the insulating base and the insulating lid, the sealing is performed. The resin component made of a polyimide conductive resin or the like that adheres and fixes the electronic component to the bottom surface or the step portion of the concave portion of the insulating base is not degraded by the heat of melting the stopper, and thereby the electronic component is attached to the insulating base. It is possible to extremely firmly adhere and fix the bottom surface or the step portion of the concave portion via the adhesive, and the electronic component can always be operated stably.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an embodiment of an electronic component storage container according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Insulating lid 3 ... Semiconductor element (electronic component) 4 ... Container 8 ... ..Sealing materials

Claims (4)

[Claims] An electronic component is hermetically sealed by joining an insulating base and an insulating lid having a mounting portion on which the electronic component is mounted, and joining the insulating base and the insulating lid via a sealing material. An electronic component storage container configured to store therein, wherein the sealing material contains an inorganic filler in a glass component and a metal filler having a larger particle size than the inorganic filler, and an insulating base of an insulating lid body. An electronic component storage container, which is attached to the entire surface on the side. 2. The electronic component container according to claim 1, wherein the average particle size of the metal filler is 2 to 10 times larger than the average particle size of the inorganic filler. 3. The glass component of the sealing material is 50 to 65% by weight of lead oxide, 2 to 10% by weight of boron oxide, and 1% of lead fluoride.
The electronic component storage container according to claim 1, wherein the container is made of glass containing 0 to 30% by weight, zinc oxide 1 to 6% by weight, and bismuth oxide 10 to 20% by weight. 4. The sealing material according to claim 1, wherein the metal filler comprises an iron-nickel alloy and / or an iron-nickel-cobalt alloy.
2. The electronic component according to claim 1, wherein the inorganic filler is made of a lead titanate-based compound, the content of the metal filler is 5 to 10% by weight, and the content of the inorganic filler is 26 to 45% by weight. Storage container.