JP2001076659A - 荷電粒子ビーム顕微鏡、欠陥検査装置及び半導体デバイスの製造方法 - Google Patents

荷電粒子ビーム顕微鏡、欠陥検査装置及び半導体デバイスの製造方法

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Publication number
JP2001076659A
JP2001076659A JP25129499A JP25129499A JP2001076659A JP 2001076659 A JP2001076659 A JP 2001076659A JP 25129499 A JP25129499 A JP 25129499A JP 25129499 A JP25129499 A JP 25129499A JP 2001076659 A JP2001076659 A JP 2001076659A
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Japan
Prior art keywords
optical system
charged particle
primary
lens
astigmatism
Prior art date
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Pending
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JP25129499A
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English (en)
Japanese (ja)
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JP2001076659A5 (enExample
Inventor
Hiroshi Nishimura
宏 西村
Toru Takagi
徹 高木
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Nikon Corp
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Nikon Corp
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Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP25129499A priority Critical patent/JP2001076659A/ja
Publication of JP2001076659A publication Critical patent/JP2001076659A/ja
Publication of JP2001076659A5 publication Critical patent/JP2001076659A5/ja
Pending legal-status Critical Current

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  • Measuring Leads Or Probes (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Sources, Ion Sources (AREA)
JP25129499A 1999-09-06 1999-09-06 荷電粒子ビーム顕微鏡、欠陥検査装置及び半導体デバイスの製造方法 Pending JP2001076659A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25129499A JP2001076659A (ja) 1999-09-06 1999-09-06 荷電粒子ビーム顕微鏡、欠陥検査装置及び半導体デバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25129499A JP2001076659A (ja) 1999-09-06 1999-09-06 荷電粒子ビーム顕微鏡、欠陥検査装置及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2001076659A true JP2001076659A (ja) 2001-03-23
JP2001076659A5 JP2001076659A5 (enExample) 2006-08-03

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ID=17220677

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Application Number Title Priority Date Filing Date
JP25129499A Pending JP2001076659A (ja) 1999-09-06 1999-09-06 荷電粒子ビーム顕微鏡、欠陥検査装置及び半導体デバイスの製造方法

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JP (1) JP2001076659A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002091421A1 (fr) * 2001-05-01 2002-11-14 Nikon Corporation Appareil a faisceau d'electrons et son utilisation pour la fabrication
DE10235456A1 (de) * 2002-08-02 2004-02-26 Leo Elektronenmikroskopie Gmbh Elektronenmikroskopiesystem
US7135677B2 (en) 2002-08-13 2006-11-14 Carl Zeiss Nts Gmbh Beam guiding arrangement, imaging method, electron microscopy system and electron lithography system
CN113192815A (zh) * 2016-01-27 2021-07-30 Asml荷兰有限公司 多个带电粒子束的装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002091421A1 (fr) * 2001-05-01 2002-11-14 Nikon Corporation Appareil a faisceau d'electrons et son utilisation pour la fabrication
DE10235456A1 (de) * 2002-08-02 2004-02-26 Leo Elektronenmikroskopie Gmbh Elektronenmikroskopiesystem
JP2004165146A (ja) * 2002-08-02 2004-06-10 Leo Elektronenmikroskopie Gmbh 電子顕微鏡システム
US6946657B2 (en) * 2002-08-02 2005-09-20 Carl Zeiss Nts Gmbh Electron microscopy system
DE10235456B4 (de) * 2002-08-02 2008-07-10 Leo Elektronenmikroskopie Gmbh Elektronenmikroskopiesystem
US7135677B2 (en) 2002-08-13 2006-11-14 Carl Zeiss Nts Gmbh Beam guiding arrangement, imaging method, electron microscopy system and electron lithography system
CN113192815A (zh) * 2016-01-27 2021-07-30 Asml荷兰有限公司 多个带电粒子束的装置

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