JP2001068179A - Anisotropic conductive connection member - Google Patents

Anisotropic conductive connection member

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Publication number
JP2001068179A
JP2001068179A JP24409399A JP24409399A JP2001068179A JP 2001068179 A JP2001068179 A JP 2001068179A JP 24409399 A JP24409399 A JP 24409399A JP 24409399 A JP24409399 A JP 24409399A JP 2001068179 A JP2001068179 A JP 2001068179A
Authority
JP
Japan
Prior art keywords
electrode
anisotropic conductive
connection member
semiconductor element
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24409399A
Other languages
Japanese (ja)
Inventor
Katsumi Sato
克己 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Priority to JP24409399A priority Critical patent/JP2001068179A/en
Publication of JP2001068179A publication Critical patent/JP2001068179A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
  • Manufacturing Of Electrical Connectors (AREA)

Abstract

PROBLEM TO BE SOLVED: To surely position an electrode part of a semiconductor device and a conductive part of an anisotropic conductive connection member by installing an opening having a diameter larger than that of an electrode, integratedly installing a conductor having elasticity in the opening, and making the depth from the surface of an insulating sheet to the conductor shallower than the height of the electrode projected from the plane of the semiconductor device in the opening. SOLUTION: When the electrode is a semiconductor device to be inspected and projected from the plane of the semiconductor device, the projected electrode is inserted into each opening corresponding to the anisotropic conductive connection member, the electrode part of the semiconductor device and the conductive part of the anisotropic conductive connection member can correctly be positioned. In this state, when a normal pressure is applied, the electrode of the semiconductor device and the conductive part of the anisotropic conductive connection member can surely be electrically connected. Since the diameter of the bump-shaped electrode of the semiconductor device is smaller than that of the opening of the anisotropic conductive connection member, the inserted electrode comes in contact with the conductor whose tip has elasticity to be electrically connected, and deformation of the device can be reduced.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、BGA等の電極が
バンプ形状を有する半導体素子の電気的接続部材に関
し、またそれを用いて半導体素子等の電気的検査などを
行う方法および半導体素子の検査装置に関するものであ
る。さらに詳しくは、上記半導体素子の電気的接続部材
からなる異方導電性接続部材、ならびに半導体素子の電
気的性能を該異方導電性接続部材を介在させて検査する
際に、異方導電性接続部材の導電部と被検査半導体素子
の電極との高精度な位置合せ、および被検査半導体素子
の電極の変形の低減が可能な半導体素子検査装置に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrical connection member of a semiconductor device having an electrode such as a BGA having a bump shape, a method for performing an electrical inspection of a semiconductor device using the same, and an inspection of the semiconductor device. It concerns the device. More specifically, an anisotropic conductive connection member made of the above-mentioned semiconductor element electrical connection member, and an anisotropic conductive connection member for inspecting the electrical performance of the semiconductor element with the anisotropic conductive connection member interposed therebetween. The present invention relates to a semiconductor device inspection apparatus capable of accurately aligning a conductive portion of a member with an electrode of a semiconductor element to be inspected and reducing deformation of an electrode of the semiconductor element to be inspected.

【0002】[0002]

【従来の技術】一般に、機器の小型化、高性能化に伴
い、半導体素子の電極数は増加し、その電極の間隔ピッ
チも微細化する傾向にある。また、BGA等のように半
導体素子の裏面にバンプ形状の電極が形成された半導体
素子は、機器に実装する上において、その専有面積を小
さくできるためその重要性が高まってきた。それらの半
導体素子の電気的検査等を行う場合、該半導体素子の電
極を回路装置や検査装置と接続するための部材が用いら
れる。かかる部材としては、異方導電性接続部材があ
る。異方導電性接続部材は、例えば図1に示すように、
絶縁シート20に厚さ方向へ貫通孔を設け、該貫通孔に
金属バンプ21を形成するものや、図2に示すように、
ゴム等を絶縁部の基材22とし、球状や棒状の導電材を
用いて形成された異方性導電部23を有するものなどが
があり、両者とも電気的な接続を得られる点で有効な方
法である。
2. Description of the Related Art Generally, the number of electrodes of a semiconductor device is increasing and the pitch between the electrodes is also becoming finer with the miniaturization and higher performance of equipment. In addition, a semiconductor element having a bump-shaped electrode formed on the back surface of the semiconductor element, such as a BGA, has become increasingly important in mounting on a device because its occupied area can be reduced. When conducting an electrical inspection or the like of such a semiconductor element, a member for connecting an electrode of the semiconductor element to a circuit device or an inspection device is used. As such a member, there is an anisotropic conductive connecting member. The anisotropic conductive connection member, for example, as shown in FIG.
A through hole is provided in the insulating sheet 20 in the thickness direction, and a metal bump 21 is formed in the through hole, as shown in FIG.
Rubber or the like may be used as the base material 22 of the insulating portion and may have an anisotropic conductive portion 23 formed using a spherical or rod-shaped conductive material, and both are effective in that an electrical connection can be obtained. Is the way.

【0003】[0003]

【発明が解決しようとする課題】しかし、かかる異方導
電性接続部材を用いて微細な電極ピッチを有するBGA
等の半導体素子の電気検査を行う場合、その半導体素子
の微細かつ高密度な電極と異方導電性接続部材シートの
導電部との位置合わせが重要であり、電極間のピッチが
微細かつ高密度になるほどその重要性が増してくる。ま
た、半導体素子の電極間ピッチが微細になるに伴って、
電極径が小径化され、半田ボールが小さくなりつつあ
る。半導体素子の電極径の小径化は、バーンイン試験等
の高温下で半導体素子を上面から加圧した状態で保持し
検査した場合、検査工程における加圧による電極の変形
が著しくなる。このような試験中の電極部の変形は、試
験後の実装工程に影響を与える場合もある。そのような
状況下で、前記、金属バンプを用いた導電性シートで
は、該バンプと半導体素子の電極との接触が金属同士と
なり、電気的性能の検査中に該素子の電極が変形し易い
状況にある。また、前記ゴムを絶縁部の基材とする異方
導電性接続部材の場合は、高温環境下においてゴム基材
の膨張により位置精度に影響が生じやすい状況となり、
これらの点で技術的な対応が求められてきている。
However, a BGA having a fine electrode pitch by using such an anisotropic conductive connecting member.
When conducting an electrical inspection of a semiconductor device such as a semiconductor device, it is important to align the fine and high-density electrodes of the semiconductor device with the conductive portions of the anisotropic conductive connection member sheet, and the pitch between the electrodes is fine and high-density. The more important it becomes. Also, as the pitch between the electrodes of the semiconductor element becomes finer,
Electrode diameters have been reduced and solder balls are becoming smaller. In order to reduce the diameter of the electrode of the semiconductor element, when the semiconductor element is held under a high pressure such as in a burn-in test and the inspection is performed while the semiconductor element is pressed from the upper surface, the deformation of the electrode due to the pressing in the inspection process becomes remarkable. Such deformation of the electrode section during the test may affect the mounting process after the test. Under such circumstances, in the conductive sheet using the metal bumps, the contact between the bumps and the electrodes of the semiconductor element becomes metal, and the electrodes of the element are easily deformed during the inspection of the electrical performance. It is in. Further, in the case of the anisotropic conductive connection member using the rubber as a base material of the insulating portion, a situation is likely to occur in which positional accuracy is affected by expansion of the rubber base material in a high temperature environment,
In these respects, technical measures have been required.

【0004】本発明は以上のような問題点を解決するも
のであって、その目的は、検査対象であるBGA等の半
導体素子の電極間のピッチが微細であっても、また半導
体素子の外形に多少の寸法バラツキ、そり、電極位置の
ずれ等があっても、半導体素子の電極部と異方導電性接
続部材の導電部との位置合わせが確実に行え、且つ、電
気的接続が確保されるとともに、半導体電極が微細で検
査時の加圧により変形を起こしやすいものであってもそ
の変形を十分に低減できる異方導電性接続部材を提供す
るものである。
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has an object to solve the problem that even if the pitch between the electrodes of a semiconductor device such as a BGA to be inspected is fine, the outer shape of the semiconductor device can be reduced. Even if there is some dimensional variation, warpage, electrode position deviation, etc., the alignment between the electrode part of the semiconductor element and the conductive part of the anisotropic conductive connection member can be performed reliably, and electrical connection is ensured. In addition, an object of the present invention is to provide an anisotropic conductive connecting member capable of sufficiently reducing the deformation even when the semiconductor electrode is minute and easily deformed by pressurization during inspection.

【0005】[0005]

【課題を解決するための手段】すなわち本発明は、 半
導体素子の平面より突出した形状の電極を有する半導体
素子の接続部材であって、絶縁性シートの接続対象半導
体素子の各電極に対応した位置に、該電極の径より大き
な径の開口部を設け、該開口部内に弾性である導電体を
一体的に設け、かつ、該開口部において絶縁シート表面
から導電体までの深さが、半導体素子の平面より突出し
た電極の高さよりも浅いことを特徴とする異方導電性接
続部材を提供するものである。また本発明は、検査対象
半導体素子と電気的検査装置の間に、上記の異方導電性
接続部材を設けてなることを特徴とする半導体素子の検
査装置を提供するものである。また本発明は、検査対象
半導体素子と電気的検査装置の間に、上記の異方導電性
接続部材を設け、該検査対象半導体素子の電気的検査を
行なうことを特徴とする半導体素子の検査方法を提供す
るものである。
That is, the present invention relates to a connecting member for a semiconductor element having electrodes protruding from the plane of the semiconductor element, wherein the insulating sheet has a position corresponding to each electrode of the semiconductor element to be connected. An opening having a diameter larger than the diameter of the electrode, an elastic conductor is integrally provided in the opening, and the depth from the surface of the insulating sheet to the conductor in the opening is smaller than that of the semiconductor element. The present invention provides an anisotropic conductive connecting member characterized by being shallower than the height of the electrode protruding from the plane. The present invention also provides an inspection device for a semiconductor device, wherein the above-described anisotropic conductive connection member is provided between a semiconductor device to be inspected and an electrical inspection device. According to the present invention, there is provided an inspection method of a semiconductor device, comprising providing the above-described anisotropic conductive connecting member between a semiconductor device to be inspected and an electrical inspection device, and electrically inspecting the semiconductor device to be inspected. Is provided.

【0006】[0006]

【発明の実施の形態】本発明において異方導電性接続部
材は、絶縁シートに接続対象半導体素子の各電極に対応
した位置に該電極の径より大きな径の開口部を設け、必
要に応じて開口部の内部および底部に導電体が一体的に
設けられている。該接続部材のシートの開口部は、例え
ば半導体素子を異方導電性接続部材を介在させて電気的
検査を行う際に、該検査対象の半導体素子の電極の一部
が該開口部に挿入され、異方導電性接続部材の弾性を有
している導電体と接合もしくは圧接される。異方導電性
接続部材としては、その全面が厚さ方向に電気的に導通
性のものでもよいし、部分的に厚さ方向に電気的に導通
性のものでもよい。好ましいのは、基板の各開口部に対
応する位置に、各々厚さ方向に電気的に導通性の導電体
を有する異方導電性接続部材である。
BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, an anisotropic conductive connecting member is provided with an opening having a diameter larger than the diameter of an electrode at a position corresponding to each electrode of a semiconductor element to be connected on an insulating sheet. A conductor is integrally provided inside and at the bottom of the opening. In the opening of the sheet of the connection member, for example, when performing an electrical inspection of the semiconductor element with an anisotropic conductive connection member interposed therebetween, a part of the electrode of the semiconductor element to be inspected is inserted into the opening. Is joined or pressed to the elastic conductor of the anisotropic conductive connection member. As the anisotropic conductive connecting member, the whole surface may be electrically conductive in the thickness direction, or may be partially electrically conductive in the thickness direction. Preferred is an anisotropic conductive connection member having a conductor electrically conductive in the thickness direction at a position corresponding to each opening of the substrate.

【0007】本発明の対象となる半導体素子は、フリッ
プチップ等のベアチップLSI,BGA等のパッケージ
LSI,MCM等の複数の半導体素子が搭載されたモジ
ュール基板、回路基板等であり、特に、その電極が素子
平面から突出しているバンプ状のものに対して効果的で
ある。さらに、バンプはボール形状、円柱形状、角柱形
状のものが特に好ましい。このような電極が半導体素子
平面から突出している被検査半導体素子であると、該突
出電極の各々を異方導電性接続部材の対応する各開口部
に挿入することにより,半導体素子の電極部と異方導電
性接続部材の導電部とを正確に位置決めすることができ
る。そして、この状態で半導体素子の電気検査で通常行
われる程度の加圧を行えば、半導体素子の電極と異方導
電性接続部材の導電部との電気的接続が確保できる。ま
た、半導体素子のバンプ状の電極の径は、異方導電性接
続部材の開口部の径よも小さいため、挿入された電極
は、その先端が弾性を有する該と接触し導通を得るた
め、該素子の電極の変形は十分に低減できる。
The semiconductor element to which the present invention is applied is a bare chip LSI such as a flip chip, a package LSI such as a BGA, a module substrate or a circuit board on which a plurality of semiconductor elements such as an MCM are mounted. Is effective for bump-shaped ones protruding from the element plane. Further, it is particularly preferable that the bump has a ball shape, a column shape, and a prism shape. When such an electrode is a semiconductor device to be inspected projecting from the plane of the semiconductor element, each of the projecting electrodes is inserted into the corresponding opening of the anisotropic conductive connection member, thereby allowing the electrode section of the semiconductor element to be connected to the electrode. The conductive portion of the anisotropic conductive connection member can be accurately positioned. In this state, if pressure is applied to the extent normally performed in the electrical inspection of the semiconductor element, electrical connection between the electrode of the semiconductor element and the conductive portion of the anisotropic conductive connection member can be secured. Also, since the diameter of the bump-shaped electrode of the semiconductor element is smaller than the diameter of the opening of the anisotropic conductive connection member, the inserted electrode comes into contact with the one having the elasticity at the tip to obtain conduction, The deformation of the electrodes of the element can be sufficiently reduced.

【0008】また、本発明の異方導電性接続部材は、透
明であっても不透明であってもよいが、半導体素子の電
極部を開口部に挿入する際に目視で確認できる点で透明
である方が好ましい。また、本発明の異方導電性接続部
材は、絶縁部である基材と導電部が一体化した構造とな
っており、シート状であることが好ましい。
The anisotropic conductive connection member of the present invention may be transparent or opaque, but is transparent in that the electrode portion of the semiconductor element can be visually confirmed when inserted into the opening. Something is preferred. Further, the anisotropic conductive connection member of the present invention has a structure in which a base material serving as an insulating portion and a conductive portion are integrated, and is preferably in a sheet shape.

【0009】本発明の異方導電性接続部材は、絶縁部と
なる基材の材質の性能として、弾性の有無、耐熱性及び
柔軟性は適宜選択することができる。また、本発明の異
方導電性接続部材の開口部は、半導体素子の電極を挿入
できる径であればよく、その形状については種々のもの
が可能である。また、本発明の異方導電性接続部材は、
図4に示すように半導体素子電極と接触する側に対応す
る導電部2bの表面が、平面であっても凹凸を有してい
てもよく、またへこんだ凹部14を有していてもよい。
異方導電性接続部材の開口部において、その部材平面か
ら導電体までの深さは、該接続部材の厚さ方向に該半導
体素子の電極の高さより浅ければよく、開口径や深さに
ついて特に制限はない。また、本発明の異方導電性接続
部材は、図5に示すように、接続する電極の状態や形状
や接触性を考慮し、凹凸化、平滑化及び粗面化等のほ
か、メッキや導電化などの表面加工15を施してもよ
い。さらに、図6に示すように弾性や耐久性等の特徴的
な性能を得るために硬度の異なるゴム17及び18を組
み合わせることもできる。その際、17と18のどちら
の硬度が高くてもよい。また、図7に示すように表面に
ゴムの替わりに18部表面に金属薄膜処理19等の加工
を加えてもよい。また、図8に示すように絶縁部の開口
に導電性メッキ16を施しても良い。なお、本発明の接
続部材において、半導体に対する面とは反対側の導電体
部分は、図11に示すように種々の形態をとることがで
きる。
In the anisotropic conductive connecting member of the present invention, the presence or absence of elasticity, heat resistance and flexibility can be appropriately selected as the performance of the material of the base material to be the insulating portion. The opening of the anisotropic conductive connection member of the present invention may have any diameter as long as the electrode of the semiconductor element can be inserted, and various shapes are possible. Further, the anisotropic conductive connecting member of the present invention,
As shown in FIG. 4, the surface of the conductive portion 2b corresponding to the side in contact with the semiconductor element electrode may be flat, have irregularities, or have a concave concave portion 14.
In the opening of the anisotropic conductive connection member, the depth from the member plane to the conductor may be smaller than the height of the electrode of the semiconductor element in the thickness direction of the connection member. There is no particular limitation. In addition, as shown in FIG. 5, the anisotropic conductive connecting member of the present invention takes into account the state, shape, and contactability of the electrodes to be connected, and, in addition to unevenness, smoothing and Surface treatment 15 such as surface treatment may be performed. Further, as shown in FIG. 6, rubbers 17 and 18 having different hardnesses can be combined to obtain characteristic characteristics such as elasticity and durability. In that case, either of the hardness of 17 and 18 may be high. Further, as shown in FIG. 7, processing such as metal thin film treatment 19 may be applied to the 18-part surface instead of rubber on the surface. Further, as shown in FIG. 8, conductive plating 16 may be applied to the opening of the insulating portion. In the connection member of the present invention, the conductor portion on the side opposite to the surface with respect to the semiconductor can take various forms as shown in FIG.

【0010】上記異方導電性接続部材の導電体は、導電
性のゴムやエラストマーが好ましい。特に、硬化可能な
ゴムが好ましく、特にシリコーンゴムが好ましい。これ
らは、ゴムやエラストマー中に導電性の物質を配合した
ものが好ましい。かかる導電性の物質としては、カーボ
ンブラックや金属粒子や金属繊維などが好ましく、特に
金属粒子が好ましい。なかでも磁性を示す粒子は、磁場
により配向させて導通性を良好にできる点で好ましい。
金属粒子としては、例えばニッケル、鉄、コバルトなど
の磁性を示す金属粒子もしくはこれらの合金の粒子、ま
たはこれらの粒子に金、銀、パラジウム、ロジウムなど
の導電性のよい金属のメッキを施したもの、非磁性金属
粒子もしくはガラスビーズなどの無機質粒子またはポリ
マー粒子にニッケル、コバルトなどの導電性磁性体のメ
ッキを施したものなどを挙げることができる。 これら
の中ではニッケル粒子の表面に金や銀のメッキを施した
粒子が好ましい。
The conductor of the anisotropic conductive connection member is preferably a conductive rubber or elastomer. Particularly, a curable rubber is preferable, and a silicone rubber is particularly preferable. These are preferably those in which a conductive substance is blended in rubber or an elastomer. As such a conductive substance, carbon black, metal particles, metal fibers, and the like are preferable, and metal particles are particularly preferable. Among them, particles showing magnetism are preferred because they can be oriented by a magnetic field to improve conductivity.
Examples of the metal particles include nickel, iron, and particles of magnetism such as cobalt or particles of alloys thereof, or particles obtained by plating these particles with a highly conductive metal such as gold, silver, palladium, or rhodium. And inorganic particles such as non-magnetic metal particles or glass beads or polymer particles plated with a conductive magnetic material such as nickel or cobalt. Among these, particles obtained by plating gold or silver on the surface of nickel particles are preferable.

【0011】絶縁部を構成する材料としては、ゴムやエ
ラストマーや樹脂が用いられる。これらのなかでは、樹
脂が好ましい。これらの材料の具体例としては、例えば
ポリイミド樹脂、エポキシ樹脂等の熱硬化性樹脂や、例
えばポリエチレンテレフタレート樹脂、ポリブチレンテ
レフタレート樹脂などのポリエステル樹脂、塩化ビニル
樹脂、ポリスチレン樹脂、ポリアクリロニトリル樹脂、
ポリエチレン樹脂、ポリプロピレン樹脂、アクリル樹
脂、ポリブタジエン樹脂、ポリフェニレンエーテル、ポ
リフェニレンサルファイド、ポリアミド、ポリオキシメ
チレン等の熱可塑性樹脂などが用いられる。これらの中
では、耐熱性、寸法安定性の点で熱硬化性樹脂が好まし
く、特に電気特性の点でポリイミド樹脂が好ましい。
As a material for forming the insulating portion, rubber, elastomer, or resin is used. Of these, resins are preferred. Specific examples of these materials include, for example, a thermosetting resin such as a polyimide resin and an epoxy resin, and a polyester resin such as a polyethylene terephthalate resin and a polybutylene terephthalate resin, a vinyl chloride resin, a polystyrene resin, a polyacrylonitrile resin,
Thermoplastic resins such as polyethylene resin, polypropylene resin, acrylic resin, polybutadiene resin, polyphenylene ether, polyphenylene sulfide, polyamide, and polyoxymethylene are used. Among these, a thermosetting resin is preferred in terms of heat resistance and dimensional stability, and a polyimide resin is particularly preferred in terms of electrical characteristics.

【0012】異方導電性接続部材は、上記絶縁材料に穴
加工し、その穴の中に前記導電体を充填し、成形するこ
とにより製造することができる。かかる導電体として
は、前記磁性体を含有する成形材料を用いた場合、その
成形材料を用いて形成した層の厚さ方向に平行磁場をか
けて、その磁力によって導電粒子を移動させながら、硬
化することによって該材料の開口部内に導電部を形成す
ることができる。かかる成型方法においては、ゴムとし
て液状シリコーンゴムを用いるのが好ましい。
The anisotropic conductive connecting member can be manufactured by forming a hole in the insulating material, filling the hole with the conductor, and molding. When a molding material containing the magnetic material is used as such a conductor, a parallel magnetic field is applied in a thickness direction of a layer formed using the molding material, and the magnetic particles move the conductive particles to cure the conductor. By doing so, a conductive portion can be formed in the opening of the material. In such a molding method, it is preferable to use liquid silicone rubber as the rubber.

【0013】以下、図面によって本発明を具体的に説明
する。図3は本発明の異方導電性接続部材を用いた半導
体素子検査装置およびそこに検査対象半導体素子を装着
した具体的構成例を示すものである。検査対象の半導体
素子1の電極1aは、該素子1の表面から突出してお
り、異方導電性接続部材2の開口部2aに挿入されてい
る。導電部表面13cと該接続部材表面13bとの深さ
dは前記半導体素子電極1aの高さより低く、異方導電
性シート2は、厚さ方向に電気的に導電性の導電部を複
数有し、その導電部2bが検査装置基板3の電極部3a
に対応した位置となるように位置決めピン4で位置を規
制されている。 検査対象の半導体素子1の電極1aと
検査装置基板3の電極部3aと異方導電性接続部材2の
導電部2bとは、加圧力5を介して十分な電気的接続を
得る程度に加圧接触されており、異方導電性接続部材の
導電部と対応した位置から引き出し配線8は検査装置基
板3を介して、半導体素子1の各電極は外部の電気的検
査測定機に接続されている。
Hereinafter, the present invention will be described in detail with reference to the drawings. FIG. 3 shows a specific example of a semiconductor device inspection apparatus using the anisotropic conductive connection member of the present invention and a semiconductor element to be inspected mounted thereon. The electrode 1 a of the semiconductor element 1 to be inspected protrudes from the surface of the element 1 and is inserted into the opening 2 a of the anisotropic conductive connection member 2. The depth d between the conductive portion surface 13c and the connection member surface 13b is lower than the height of the semiconductor element electrode 1a, and the anisotropic conductive sheet 2 has a plurality of electrically conductive portions in the thickness direction. , The conductive portion 2b is the electrode portion 3a of the inspection device substrate 3.
The position is regulated by the positioning pin 4 so as to be a position corresponding to. The electrode 1a of the semiconductor element 1 to be inspected, the electrode portion 3a of the inspection device substrate 3, and the conductive portion 2b of the anisotropic conductive connection member 2 are pressurized to a sufficient degree to obtain sufficient electrical connection via the pressing force 5. The electrodes 8 of the semiconductor element 1 are connected to the external electrical inspection and measurement device via the inspection device substrate 3 from the position corresponding to the conductive portion of the anisotropic conductive connection member. .

【0014】異方導電性接続部材2の厚さは、実用的に
好ましくは0.01〜3mm、より好ましくは0.05
〜1mm、さらに好ましくは0.1〜0.8mm程度の
厚みで用いられる。この厚さは、検査対象である半導体
素子の電極の突出高さを考慮して設定することができ
る。また、導電体(導電部)2bの厚さは、実用的に好
ましくは0.05〜3mm、より好ましくは0.1〜1
mm、さらに好ましくは0.2〜0.8mmである。ま
た、図10に示すように、半導体素子の平面より突出し
た電極の、該平面からの高さをtとし、異方導電性接続
部材の該表面から導電体までの深さをdとしたとき、d
/tの比は、0.5〜0.99が好ましく、さらに好ま
しくは0.6〜0.95であり、特に好ましくは0.7
〜0.9である。また、tとdの差(t−d)は、0.
01〜1mmが好ましく、さらに好ましくは0.02〜
0.5であり、特に好ましくは0.05〜0.4であ
る。
The thickness of the anisotropic conductive connecting member 2 is practically preferably 0.01 to 3 mm, more preferably 0.05 to 3 mm.
To 1 mm, more preferably about 0.1 to 0.8 mm. This thickness can be set in consideration of the protruding height of the electrode of the semiconductor element to be inspected. The thickness of the conductor (conductive portion) 2b is practically preferably 0.05 to 3 mm, more preferably 0.1 to 1 mm.
mm, more preferably 0.2 to 0.8 mm. Also, as shown in FIG. 10, when the height of the electrode protruding from the plane of the semiconductor element from the plane is t, and the depth from the surface of the anisotropic conductive connection member to the conductor is d. , D
The ratio of / t is preferably 0.5 to 0.99, more preferably 0.6 to 0.95, and particularly preferably 0.7 to 0.99.
0.9. The difference (t−d) between t and d is 0.1.
It is preferably from 01 to 1 mm, more preferably from 0.02 to 1 mm.
0.5, particularly preferably 0.05 to 0.4.

【0015】異方導電性接続部材2の開口部2aは、例
えば上記絶縁部形成材料からなる接続部材シートの所定
位置に穴を開け、その内部や底部を導電材料と一体的に
製造することでできる。
The opening 2a of the anisotropic conductive connecting member 2 is formed, for example, by making a hole at a predetermined position of a connecting member sheet made of the above-mentioned insulating portion forming material, and manufacturing the inside and the bottom integrally with the conductive material. it can.

【0016】開口部の穴あけは、NC(Numerical Cont
rol)制御のドリル穴あけ装置やレーザー加工装置を用い
て行うことができる。 また、多数のピンを有する金型
を用いて成形することによっても製造できる。絶縁部の
開口形状は、電極部の形状に合わせて円形であっても角
形であってもまた異形のものであってもよいが、通常、
円形とすることが好ましい。また、開口部は、回路基板
の各電極に対応した位置に開ける必要がある。例えばB
GAの場合、その電極位置に対応して格子状(グリッ
ド)に配列して開けるのが好ましい。
Drilling of the opening is performed by NC (Numerical Cont.).
(rol) control using a drilling device or a laser processing device. It can also be manufactured by molding using a mold having a large number of pins. The opening shape of the insulating portion may be circular or square or irregular in shape according to the shape of the electrode portion.
Preferably, it is circular. Further, it is necessary to open the opening at a position corresponding to each electrode of the circuit board. For example, B
In the case of a GA, it is preferable to open it by arranging it in a grid shape (grid) corresponding to the electrode position.

【0017】[0017]

【実施例】以下、本発明の実施例を説明するが、本発明
はこれらの実施例に限定されるものではない。 (実施例1)異方導電性接続部材を形成する方法を、図
9を用いて説明する。厚さ0.2mmのガラエポ板6
に、NC制御のドリル穴あけ装置で、検査対象パッケー
ジLSIの球状(径0.3mm、厚み0.25mm)の
バンプ(0.5mmピッチ)に対応した位置に0.4m
m径の穴7を多数開け、図9に示すように金型31,3
2の間にセットした。
EXAMPLES Examples of the present invention will be described below, but the present invention is not limited to these examples. (Example 1) A method for forming an anisotropic conductive connection member will be described with reference to FIG. Glass epoxy plate 6 with a thickness of 0.2 mm
Then, an NC-controlled drilling device is used to measure 0.4 m at a position corresponding to a spherical (diameter 0.3 mm, thickness 0.25 mm) bump (0.5 mm pitch) of the package LSI to be inspected.
A large number of holes 7 having a diameter of m are formed, and as shown in FIG.
Set between two.

【0018】次に、熱硬化型シリコーンゴムに、平均粒
径40μmの金メッキしたニッケルよりなる導電性磁性
体粒子を12体積%となる割合で混合して導電体成形材
料を調製した。この成形材料を、金型にセットした上記
ガラエポ板の開口部7に充填した。
Next, conductive magnetic particles of gold-plated nickel having an average particle size of 40 μm were mixed with the thermosetting silicone rubber at a ratio of 12% by volume to prepare a conductive molding material. This molding material was filled into the opening 7 of the glass epoxy plate set in the mold.

【0019】この金型は、各々電磁石で構成される上型
31と下型32よりなり、上型と下型には、それぞれ検
査対象半導体素子の電極位置に対応したパターンの強磁
性体部分33と、それ以外の非磁性体部分35を有し成
形材料と接する磁極板が設けられている。さらに、上型
には、開口部内の凹部深さを調整する目的で凸部34が
設けられており、この凸部の長さで異方導電性接続部材
表面から導電体の上面位置までの距離すなわち、開口部
の導電体までの深さdを設定することができる。また、
上記の上下の磁極板は、上記イミドフィルムの4隅のガ
イド穴に相当する位置にガイドピンをたてることにより
位置合わせを行った。この状態で上型と下型とを電磁石
の間に挟み、異方導電性接続部材の厚さ方向に平行磁場
を作用させて、導電性粒子を金型内の強磁性体部分に集
め、かつ磁場方向に並べさせた。この状態で、圧力を加
えながら100℃、1時間かけて異方導電性シート材料
を硬化させて異方導電性接続部材を製造した。上記のよ
うに成形金型の4隅にガイドピンをたてることにより、
4隅に位置合わせ用のガイド穴を有する異方導電性接続
部材が得られた。
This mold comprises an upper mold 31 and a lower mold 32 each composed of an electromagnet. The upper mold and the lower mold have a ferromagnetic portion 33 having a pattern corresponding to the electrode position of the semiconductor element to be inspected. And a magnetic pole plate having a non-magnetic portion 35 in contact with the molding material. Further, the upper mold is provided with a convex portion 34 for the purpose of adjusting the depth of the concave portion in the opening, and the distance from the surface of the anisotropic conductive connecting member to the upper surface position of the conductor is determined by the length of the convex portion. That is, the depth d of the opening to the conductor can be set. Also,
The upper and lower magnetic pole plates were aligned by setting guide pins at positions corresponding to the guide holes at the four corners of the imide film. In this state, the upper mold and the lower mold are sandwiched between the electromagnets, and a parallel magnetic field is applied in the thickness direction of the anisotropic conductive connection member to collect the conductive particles in the ferromagnetic portion in the mold, and They were arranged in the direction of the magnetic field. In this state, while applying pressure, the anisotropic conductive sheet material was cured at 100 ° C. for 1 hour to produce an anisotropic conductive connection member. By setting the guide pins at the four corners of the molding die as described above,
An anisotropic conductive connection member having guide holes for alignment at four corners was obtained.

【0020】次に、上記のようにして得られた異方導電
性接続部材を用いて、図3に示した構成とし、無作為に
抽出した100個の半導体素子について電気検査を行な
った。半導体素子の各電極の間隔のピッチは0.5mm
と微細で、該素子には若干のそり等が見られていたが、
位置合わせが容易かつ正確であり、対象とした該素子全
数の電気検査を精度よく行うことができた。
Next, using the anisotropic conductive connection member obtained as described above, the configuration shown in FIG. 3 was used, and electrical inspection was performed on 100 randomly extracted semiconductor elements. The pitch between the electrodes of the semiconductor element is 0.5 mm
And the element was slightly warped, etc.,
The alignment was easy and accurate, and the electrical inspection of all the target elements could be performed with high accuracy.

【0021】実施例2 被検査物として、0.3mm径の半田ボールを電極と
し、電極間隔が0.5mmピッチのマトリクス状の電極
を有するBGAを用い、実施例1と同様にして125℃
の高温下に上記構成の検査装置を投入し、高温下での電
気検査を行なった。その結果、無作為に抽出した10個
の該素子すべてについて電気検査を精度よく行なうこと
ができた。また、試験後の被検査物の電極には側面にわ
ずかな圧痕は見られるものの半田ボールの外径ならびに
高さには6%以上の変化は見られなかった。
Example 2 A BGA having a 0.3 mm-diameter solder ball as an electrode and a matrix-shaped electrode with an electrode pitch of 0.5 mm was used as an object to be inspected.
The inspection apparatus having the above-mentioned configuration was put in at a high temperature, and an electrical inspection was performed at a high temperature. As a result, an electrical test could be accurately performed on all of the ten randomly selected devices. In addition, although slight indentations were observed on the side surfaces of the electrodes of the test object after the test, the outer diameter and height of the solder balls did not change by 6% or more.

【0022】[0022]

【発明の効果】本発明の異方導電性接続部材によれば、
半導体素子の各電極部を該接続部材の開口部に挿入する
ことにより正確に位置決めができ、この状態で半導体素
子に加圧を行えば、半導体素子の電極と異方導電性接続
部材の導電体との電気的接続が確保できる。さらに、導
電体を弾性を有する導電ゴムにより形成することによ
り、半導体素子の電極の変形を最小限に抑える事ができ
る。このため微細かつ高密度の半導体素子電極であって
も、精度よく電気的検査装置(治具)との導通ができ、
効率よく半導体素子の検査ができる。
According to the anisotropic conductive connecting member of the present invention,
By inserting each electrode portion of the semiconductor element into the opening of the connection member, accurate positioning can be performed. In this state, if pressure is applied to the semiconductor element, the electrode of the semiconductor element and the conductor of the anisotropic conductive connection member Electrical connection with the vehicle. Further, by forming the conductor from conductive rubber having elasticity, the deformation of the electrode of the semiconductor element can be minimized. For this reason, even a fine and high-density semiconductor element electrode can accurately conduct with an electrical inspection device (jig),
Inspection of semiconductor elements can be performed efficiently.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 従来の異方導電性シートの構成の一例を示す
説明図である。
FIG. 1 is an explanatory diagram showing an example of a configuration of a conventional anisotropic conductive sheet.

【図2】 従来の異方導電性シートの構成の一例を示す
説明図である。
FIG. 2 is an explanatory diagram illustrating an example of a configuration of a conventional anisotropic conductive sheet.

【図3】 本発明の半導体素子検査装置の構成の一例を
示す説明図である。
FIG. 3 is an explanatory diagram showing an example of a configuration of a semiconductor device inspection device of the present invention.

【図4】 本発明の一例図である 。FIG. 4 is an example of the present invention.

【図5】 本発明の一例図である。FIG. 5 is an example of the present invention.

【図6】 本発明の一例図である。FIG. 6 is an example of the present invention.

【図7】 本発明の一例図である。FIG. 7 is an example of the present invention.

【図8】 本発明の一例図である。FIG. 8 is an example of the present invention.

【図9】 本発明の製造方法を示す一例図である。FIG. 9 is an example showing the manufacturing method of the present invention.

【図10】 本発明の一例図である。FIG. 10 is an example of the present invention.

【図11】 本発明の一例図である。FIG. 11 is an example of the present invention.

【符号の説明】[Explanation of symbols]

1 半導体素子 1a 半導体素子ボール状電極 2 導電性シートの基材 2a 開口部 2b 導電部 3 電気的検査装置基板 3a 電気的検査装置基板の電極部 4 位置決めピン 5 加圧力 6 ガラエポ板 7 開口部 8 引き出し配線 13b 開口部分の表面 13c 導体部の表面 14 凹部 15 表面加工 16 導電性メッキ 17 ゴム 18 ゴム 19 金属薄膜処理 20 貫通孔 21 金属バンプ 22 絶縁部 23 異方導電部 31 上型 32 下型 33 強磁性体部分 34 凸部 35 非強磁性体部分 DESCRIPTION OF SYMBOLS 1 Semiconductor element 1a Semiconductor element ball-shaped electrode 2 Conductive sheet base material 2a Opening 2b Conductive part 3 Electrical inspection device substrate 3a Electrode portion of electrical inspection device substrate 4 Positioning pin 5 Pressure force 6 Glass epoxy plate 7 Opening 8 Lead wire 13b Surface of opening 13c Surface of conductor 14 Concave 15 Surface treatment 16 Conductive plating 17 Rubber 18 Rubber 19 Metal thin film treatment 20 Through hole 21 Metal bump 22 Insulating part 23 Anisotropic conductive part 31 Upper mold 32 Lower mold 33 Ferromagnetic part 34 Convex part 35 Non-ferromagnetic part

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 半導体素子の平面より突出した形状の電
極を有する半導体素子の接続部材であって、絶縁性シー
トの接続対象半導体素子の各電極に対応した位置に、該
電極の径より大きな径の開口部を設け、該開口部内に弾
性である導電体を一体的に設け、かつ、該開口部におい
て絶縁シート表面から導電体までの深さが、半導体素子
の平面より突出した電極の高さよりも浅いことを特徴と
する異方導電性接続部材。
1. A connecting member for a semiconductor element having an electrode protruding from a plane of the semiconductor element, wherein a diameter of the insulating sheet is larger than the diameter of the electrode at a position corresponding to each electrode of the semiconductor element to be connected. An opening is provided, an elastic conductor is integrally provided in the opening, and the depth from the surface of the insulating sheet to the conductor in the opening is higher than the height of the electrode protruding from the plane of the semiconductor element. An anisotropic conductive connecting member characterized by being shallow.
【請求項2】 異方導電性シートである請求項1記載の
異方導電性接続部材
2. The anisotropic conductive connecting member according to claim 1, which is an anisotropic conductive sheet.
【請求項3】 検査対象半導体素子の突出した形状の被
検査電極が、異方導電接続部材の開口部に挿入されるこ
とで、該素子電極と該シート接続部材の位置合わせ機構
を有することを特徴とする請求項1記載の異方導電性接
続部材。
3. An apparatus according to claim 1, wherein an electrode to be inspected having a protruding shape of the semiconductor element to be inspected is inserted into an opening of the anisotropic conductive connection member to have a mechanism for aligning the element electrode and the sheet connection member. The anisotropic conductive connection member according to claim 1, wherein
【請求項4】 半導体素子の平面より突出した電極の、
該平面からの高さをtとし、異方導電性接続部材の該表
面から導電体までの深さをdとしたとき、tとdの差
(t−d)が0.01〜1mmである請求項1記載の異
方導電性接続部材。
4. An electrode protruding from a plane of a semiconductor element.
When the height from the plane is t and the depth from the surface of the anisotropic conductive connection member to the conductor is d, the difference (t−d) between t and d is 0.01 to 1 mm. The anisotropic conductive connection member according to claim 1.
【請求項5】 導電体の厚さが0.05〜3mmである
請求項1記載の異方導電性接続部材。
5. The anisotropic conductive connecting member according to claim 1, wherein the conductor has a thickness of 0.05 to 3 mm.
【請求項6】 検査対象半導体素子と電気的検査装置の
間に、請求項1記載の異方導電性接続部材を設けてなる
ことを特徴とする半導体素子の検査装置
6. An inspection device for a semiconductor device, comprising the anisotropic conductive connection member according to claim 1 provided between a semiconductor device to be inspected and an electrical inspection device.
【請求項7】 検査対象半導体素子と電気的検査装置の
間に、請求項1記載の異方導電性接続部材を設け、該検
査対象半導体素子の電気的検査を行なうことを特徴とす
る半導体素子の検査方法。
7. A semiconductor device, wherein the anisotropically conductive connecting member according to claim 1 is provided between a semiconductor device to be inspected and an electrical inspection device, and an electrical inspection of the semiconductor device to be inspected is performed. Inspection method.
JP24409399A 1999-08-30 1999-08-30 Anisotropic conductive connection member Pending JP2001068179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24409399A JP2001068179A (en) 1999-08-30 1999-08-30 Anisotropic conductive connection member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24409399A JP2001068179A (en) 1999-08-30 1999-08-30 Anisotropic conductive connection member

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Publication Number Publication Date
JP2001068179A true JP2001068179A (en) 2001-03-16

Family

ID=17113651

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
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JP2003185700A (en) * 2001-12-14 2003-07-03 Advantest Corp Ic socket
JP2006126138A (en) * 2004-11-01 2006-05-18 Anritsu Corp Test fixture
KR20190095395A (en) * 2017-02-27 2019-08-14 데쿠세리아루즈 가부시키가이샤 Inspection jig of electrical characteristics
KR102220168B1 (en) * 2020-01-23 2021-02-25 (주)티에스이 Data signal transmission connector and manufacturing method for the same
CN112470012A (en) * 2018-07-25 2021-03-09 株式会社Isc Conductive sheet for inspection

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003185700A (en) * 2001-12-14 2003-07-03 Advantest Corp Ic socket
JP2006126138A (en) * 2004-11-01 2006-05-18 Anritsu Corp Test fixture
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