JP2001093599A - Anisotropic electrical connector and checker including same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an anisotropic electrical connector for achieving effective electrical connection with the projecting electrodes of a semiconductor device with a prolonged life even with small push pressure, and a checker for the connector. SOLUTION: The anisotropic electrical connector consists of an anisotropic conductive sheet forming the conductive path projected upwards in the thickness direction, and a spacer sheet laid over the conductive sheet to make an electrical connection with a semiconductor connector with the projecting electrode arrange on the spacer. It includes a through-holes stretched towards the thickness direction receiving the projected conductive path. The through-hole receives the projecting electrode of the semiconductor device, being greater than the sum of the thickness of the spacer sheet and the height of the projecting electrode. The sum H+p of the height H of the projecting electrode and the height p of the projected conductive path is greater than the thickness d of the spacer sheet.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an anisotropic conductive connector and an inspection apparatus provided with the same, and more particularly, to a semiconductor device having an electrode having a bump shape, such as a BGA (Ball Grid Array). The present invention relates to an anisotropic conductive connector suitably used for testing its electrical performance, for example, as a connector, and to an inspection apparatus provided with the connector.

[0002]

2. Description of the Related Art In general, the number of electrodes of a semiconductor device is increasing and the pitch between the electrodes is also becoming finer with the miniaturization and higher performance of equipment. Also, for example, a semiconductor device in which a bump-shaped bump electrode is formed on one surface, such as a BGA, is becoming more important because it can reduce the occupied area when mounted on equipment. 2. Description of the Related Art In an electrical operation test and the like, an accurate and reliable electrical connection is required.

Conventionally, an electrical operation test of this type of semiconductor device has been performed using, for example, an anisotropic conductive sheet as a connector. This anisotropic conductive sheet has a conductive path formed only in the thickness direction, and a pressurized conductive path formation in which a conductive path is formed only in the thickness direction when compressed and compressed in the thickness direction. Of various structures, such as those with
For example, JP-B-56-48951, JP-A-51-9
No. 3,393, JP-A-53-147772, JP-A-54-146873, and the like. Such an anisotropic conductive sheet is useful in that a reliable electrical connection can be achieved without damaging the electrodes during an electrical operation inspection of a circuit board or the like.

FIG. 5 is an enlarged view of a contact state of an electrode when an anisotropic conductive sheet is used as a connector as it is in order to perform an electrical operation test of a semiconductor device having a ball-shaped or hemispherical-shaped projecting electrode. It is an explanatory sectional view shown as follows. Anisotropic conductive sheet 60 in this example
Is composed of a plurality of conductive path forming portions 61 extending in the thickness direction, and an insulating portion 62 that insulates the conductive path forming portions 61 from each other. It has the same thickness and its upper and lower surfaces are entirely flat.

For such an anisotropic conductive sheet 60,
On the lower surface side, connection electrodes of an inspection tester (not shown) are electrically connected to the corresponding conductive path forming portions 61, and on the upper surface side, a number of projecting electrodes are formed on the lower surface. The semiconductor device 1 to be inspected or connected to which the 1a is formed is arranged. Then, with the bump electrode 1a of the semiconductor device 1 positioned so as to be positioned with respect to the conductive path forming portion 61 of the anisotropic conductive sheet 60, the semiconductor device 1 is moved downward. By pressing, a state in which the protruding electrode 1a and the connection electrode of the tester are electrically connected via the conductive path forming portion 61 is realized, whereby the electrical operation test of the semiconductor device 1 is performed. .

However, in a connector composed of only such an anisotropic conductive sheet, the height of the protruding electrodes 1a of the semiconductor device 1 usually inevitably varies. There is a problem that a sufficient electrical connection state cannot be obtained all at once. Therefore, in practice, it is necessary to press the semiconductor device 1 with a large pressing force. As a result, an excessive pressing force (load) is locally applied to the anisotropic conductive sheet 60. Therefore, there is a problem that the service period of the anisotropic conductive sheet 60 becomes short.

On the other hand, JP-A-6-82521 discloses that
On the upper surface of the anisotropic conductive sheet, a sheet-like spacer having a through hole through which the bump electrode of the semiconductor device passes is disposed, and the bump electrode is connected to the conductive path of the anisotropic conductive sheet via the sheet-like spacer. A method of contacting the forming part has been proposed. In this method, since the pressing distance of the semiconductor device is limited by the sheet-shaped spacer, the upper limit of the pressing force is limited, so that the local pressing force applied to the anisotropic conductive sheet is prevented. However, there is a possibility that poor connection may occur because the height variation in the bump electrode of the semiconductor device cannot be sufficiently absorbed, and as a result, a necessary electrical connection state cannot be achieved with high reliability. There is a problem.

[0008]

DISCLOSURE OF THE INVENTION The present invention has been made based on the above circumstances, and its object is to provide:
It is provided with an anisotropic conductive sheet, and even when the pressing force on the semiconductor device to be connected is small, it is possible to sufficiently achieve the electrical connection with the bump electrode of the semiconductor device,
In addition, an object of the present invention is to provide an anisotropic conductive connector which can provide a long service life to the anisotropic conductive sheet. It is another object of the present invention to provide an inspection apparatus capable of easily performing an electrical operation inspection with high reliability on a semiconductor device having a bump electrode as an inspection target.

[0009]

According to the present invention, there is provided an anisotropic conductive connector comprising: an anisotropic conductive sheet having a conductive path forming portion extending in a thickness direction and projecting to an upper surface side; An anisotropic conductive connector for electrically connecting a semiconductor device having a protruding electrode on a lower surface, which is disposed on an upper surface of the sheet-like spacer, and which is disposed on an upper surface of the sheet-like spacer. The sheet-like spacer has a through hole extending in the thickness direction, and a protruding portion of the conductive path forming portion on the upper surface of the anisotropic conductive sheet is inserted into the through-hole of the sheet-like spacer from an opening on the lower surface thereof. Then, the projecting electrode of the semiconductor device is inserted into the through hole of the sheet-shaped spacer from an opening on the upper surface thereof, and the thickness of the sheet-shaped spacer is larger than the height of the projecting electrode of the semiconductor device. The sum of the height p of the height H and the anisotropic conductive protrusion of the conductive path forming portion of the sheet of the bump electrode of the semiconductor device (H + p) is the thickness d of the sheet-shaped spacer
It is characterized by being larger than.

In the above description, the thickness d of the sheet-like spacer is obtained from the sum (H + p) of the height H of the projecting electrode of the semiconductor device and the height p of the projecting portion of the conductive path forming portion of the anisotropic conductive sheet. The value α of the difference (H + pd) obtained by subtracting the value of
It is preferably about 0.5 mm. Further, it is preferable that the ratio of the size of the inner diameter r2 of the opening on the lower surface side of the through hole of the sheet-like spacer to the diameter r1 of the protruding portion of the conductive path forming portion of the anisotropic conductive sheet is 1.05 to 2. Furthermore,
The through hole of the sheet-like spacer may have an upper through-hole portion and a lower through-hole portion having a diameter different from that of the upper through-hole portion, and the sheet-like spacer may be formed on an anisotropic conductive sheet. It is possible to adopt a configuration provided integrally.

[0011] An inspection apparatus of the present invention is an inspection apparatus for performing an electrical operation inspection of a semiconductor device having a protruding electrode, and the inspection apparatus is provided with the anisotropic conductive connector described above. .

[0012]

In the above-described anisotropic conductive connector, the projecting portion of the conductive path forming portion of the anisotropic conductive sheet is inserted into the through hole of the sheet-like spacer from the opening on the lower surface side and the opening on the upper surface side. Since the protruding electrodes of the semiconductor device are more inserted, it is inevitably realized that the protruding electrodes are accurately positioned with respect to the corresponding conductive path forming portions, and the height of the protruding electrodes is a sheet-like spacer. Although the thickness is smaller than the thickness, the projecting portion of the conductive path forming portion of the anisotropic conductive sheet enters the through hole from the opening on the lower surface side of the sheet-shaped spacer, and the height H of the projecting electrode of the semiconductor device and The sum (H + p) of the height p of the protruding portion of the conductive path forming portion of the anisotropic conductive sheet is set to be larger than the thickness d of the sheet-shaped spacer, and there is a protruding portion having a large degree of freedom in deformation. By While absorbing the variation in height in the protrusion electrodes, the protrusion electrodes and the conductive path forming portion in the through hole is securely Taise' is electrically connected state is obtained.

The projecting portion of the conductive path forming portion of the anisotropic conductive sheet can be deformed at a relatively large rate in the through-hole because its periphery is not restrained, and the sheet-like spacer is interposed. As a result, the pressing force given by the protruding electrode to the protruding portion of the conductive path forming portion of the anisotropic conductive sheet is prevented from being excessive, and the required electrical connection is achieved as described above. while doing,
A long service life is obtained for the anisotropic conductive sheet.

Moreover, the contact between the protruding electrode of the semiconductor device and the projecting portion of the conductive path forming portion is achieved in the through hole of the sheet-shaped spacer, and the contact is not exposed to the outside. Such foreign substances do not enter, so that the intended electrical connection is not hindered by such foreign substances.

In the anisotropic conductive connector according to the present invention, since the inner diameter of the through hole of the sheet-shaped spacer relative to the diameter of the projecting portion of the conductive path forming portion is defined in a specific range, the projecting portion of the projecting portion is formed. It is possible to regulate the degree of deformation, thereby preventing excessive deformation, so that the anisotropic conductive sheet can have a long service life.

According to the inspection apparatus of the present invention, by providing the above-described anisotropic conductive connector, the electrical operation inspection of the semiconductor device to be inspected can be easily performed with high reliability. .

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. The anisotropic conductive connector of the present invention is for achieving an electrical connection between a semiconductor device having a protruding electrode and an appropriate electric device. Here, the semiconductor device to be connected is not particularly limited as long as it has a protruding electrode. For example, a package LS including a bare chip LSI such as a flip chip, a BGA, or the like
I, a module board or a circuit board on which a plurality of multi-chip modules (MCM) are mounted. Further, the protruding electrode of the semiconductor device is formed in a state of protruding from one surface of the semiconductor device, and the shape is usually a hemispherical shape such as a so-called ball shape, a columnar shape, or a prismatic shape. Although not limited, those having a hemispherical shape are preferable.

FIG. 1 is an explanatory sectional view showing an example of a configuration of a main part of an anisotropic conductive connector of the present invention together with a semiconductor device 1 to be connected. The semiconductor device 1 of this example includes:
It has a plurality of hemispherical projecting electrodes 1a made of, for example, a solder alloy arranged on lattice points so as to protrude from its lower surface.

On the other hand, the anisotropic conductive connector 10 includes an anisotropic conductive sheet 20 and a sheet-like spacer 30 disposed on the upper surface of the anisotropic conductive sheet 20.

The anisotropic conductive sheet 20 comprises a plurality of conductive path forming portions 21 each extending in the thickness direction thereof and an insulating portion 22 for insulating these conductive path forming portions 21 from each other. Reference numerals 21 denote positions at positions corresponding to patterns corresponding to the patterns of the protruding electrodes 1a of the semiconductor device 1, respectively.
The anisotropic conductive sheet 20 is formed in a form having a protruding portion 21 a protruding above the insulating portion 22 on the upper surface side.

Each of the conductive path forming portions 21 in the anisotropic conductive sheet 20 is formed by containing conductive particles in an insulating elastic polymer material, and preferably, the conductive particles are contained in the elastic polymer material. The sheet is oriented so as to be aligned in the thickness direction of the sheet, and when pressed and compressed in the thickness direction, the resistance value decreases and a conductive path is formed. A road is formed.

The entirety of the conductive path forming portion 21 of the anisotropic conductive sheet 20 is, for example, cylindrical, and therefore, the protruding portion 21a is also formed in a cylindrical shape. The size of the diameter r1 of the conductive path forming portion 21 or the protruding portion 21a is preferably equal to or larger than the outer diameter R of the protruding electrode 1a of the semiconductor device 1, so that both can be electrically connected. The range can be increased.

The conductive path forming portion 21 of the anisotropic conductive sheet 20
As the conductive particles constituting, for example, nickel, iron,
Metal particles showing magnetism such as cobalt or particles of these alloys or particles containing these metals, or these particles as core particles, the surface of the core particles gold, silver,
Palladium, those plated with a metal having good conductivity such as rhodium, or inorganic particles or polymer particles such as non-magnetic metal particles or glass beads as core particles, on the surface of the core particles, nickel, cobalt or the like Examples of the conductive material include those plated with a conductive magnetic material.
Among them, it is preferable to use nickel particles as core particles, the surfaces of which are plated with a metal having good conductivity such as gold or silver.

The conductive path forming portion 21 of the anisotropic conductive sheet 20
As the insulating and elastic polymer material constituting the insulating portion 22, a polymer material having a crosslinked structure is preferable. Various materials can be used as a material for a polymer substance that can be used to obtain a polymer substance having a cross-linked structure. Specific examples thereof include polybutadiene rubber, natural rubber, polyisoprene rubber, and styrene-butadiene. Copolymer rubber, conjugated diene rubbers such as acrylonitrile-butadiene copolymer rubber and hydrogenated products thereof, block copolymer rubbers such as styrene-butadiene block copolymer rubber and hydrogenated products thereof, silicone rubber, Ethylene-propylene copolymer rubber, urethane rubber, polyester rubber, chloroprene rubber,
Epichlorohydrin rubber and the like. In the above, it is preferable to use silicone rubber from the viewpoint of moldability and electrical characteristics.

A preferred example of the above-described method of manufacturing the anisotropic conductive sheet 20 will be described. First, the sheet is prepared by dispersing conductive particles in a polymer material which is cured to become an elastic polymer material. Prepare the forming material.

The sheet-forming material may contain a curing catalyst for curing the polymer material. As such a curing catalyst, an organic peroxide, a fatty acid azo compound, a hydrosilylation catalyst, or the like can be used. Specific examples of the organic peroxide used as the curing catalyst include benzoyl peroxide, bisdicyclobenzoyl peroxide, dicumyl peroxide, and ditertiary butyl peroxide. Specific examples of the fatty acid azo compound used as a curing catalyst include azobisisobutyronitrile. Specific examples of the catalyst which can be used as a catalyst for the hydrosilylation reaction include chloroplatinic acid and salts thereof, a siloxane complex containing a platinum-unsaturated group, a complex of vinylsiloxane and platinum, and platinum and 1,3-divinyltetramethyldisiloxane. And a complex of triorganophosphine or phosphite with platinum, acetylacetate platinum chelate, and a complex of cyclic diene and platinum. The amount of the curing catalyst used is appropriately selected in consideration of the type of the polymer material, the type of the curing catalyst, and other curing conditions. 15 parts by weight.

Next, as shown in FIG. 2, a sheet forming material layer 20A made of the sheet forming material is formed in a mold 50. In this mold 50, one mold plate 51 and the other mold plate 52 are arranged in parallel and opposed to each other, and an electromagnet 53 and an electromagnet 53 are provided on the upper surface of one mold plate 51 and the lower surface of the other mold plate 52. 54, and a frame-shaped plate-like spacer 55 having a thickness equivalent to the thickness of the target anisotropic conductive sheet 20 is provided between the one template 51 and the other template 52. Is provided. Then, in one template 51, a plate-shaped base material 51a made of a ferromagnetic material is used.
A ferromagnetic material portion M is formed on the lower surface of the substrate according to a pattern opposite to the intended arrangement pattern of the conductive path forming portions 21;
A non-magnetic portion N is formed in a portion other than the ferromagnetic portion M. The surface of the nonmagnetic portion N is formed so as to protrude from the surface of the ferromagnetic portion M. In the other template 52, a ferromagnetic material portion M is formed on the upper surface of a plate-like base material 52a made of a ferromagnetic material in accordance with the same pattern as the intended arrangement pattern of the conductive path forming portions 21.
Are formed, and a non-magnetic portion N is formed in a portion other than the ferromagnetic portion M.

The material forming the ferromagnetic material portion M in each of the one template 51 and the other template 52 is as follows.
Iron, nickel, cobalt, or an alloy thereof can be used. In addition, as a material forming the nonmagnetic portion N in each of the one template 51 and the other template 52, a nonmagnetic metal such as copper, a heat-resistant resin such as polyimide, or the like can be used.

By operating the electromagnets 53 and 54, a parallel magnetic field acts in a direction from the ferromagnetic portion M of one template 51 to the corresponding ferromagnetic portion M of the other template 52. I do. As a result, in the sheet forming material layer 20A, the conductive magnetic particles dispersed in the sheet forming material layer 20A become the ferromagnetic portion M of one template 51 and the other template corresponding thereto. 52 are gathered in a portion located between the ferromagnetic portion M and more preferably oriented in the thickness direction of the sheet forming material layer 20A. Then, in this state, the sheet forming material layer 20
As shown in FIG. 3, by conducting a hardening treatment on the ferromagnetic portion M of one template 51 and the corresponding ferromagnetic portion M of the other template 52, A conductive path forming portion 21 densely filled with body particles is formed, and an insulating portion 22 having no or almost no conductive magnetic particles is formed around the conductive path forming portion 21 to form an anisotropic conductive sheet 20. In the anisotropic conductive sheet 20, the conductive path forming portion 21 formed at a position corresponding to the ferromagnetic material portion M of one template 51 is formed so as to protrude on one surface (the upper surface in the drawing). I have.

In the above description, the curing treatment of the sheet forming material layer 20A can be performed with the parallel magnetic field applied, but can also be performed after the parallel magnetic field is stopped. The strength of the parallel magnetic field applied to the sheet forming material layer 20A is preferably 200 to 10000 gauss on average. As a means for applying a parallel magnetic field, a permanent magnet can be used instead of an electromagnet. As such a permanent magnet, alnico (Fe-Al-Ni) is used in that a parallel magnetic field strength within the above range can be obtained.
-Co-based alloy), ferrite and the like.

The curing treatment of the sheet forming material layer 20A is appropriately selected depending on the material to be used, but is usually carried out by a heating treatment. The sheet forming material layer 20 is heated
When the curing treatment of A is performed, a heater may be provided for the electromagnets 53 and 54. The specific heating temperature and heating time are appropriately selected in consideration of the type of the polymer material constituting the sheet forming material layer 20A, the time required for the movement of the conductive magnetic particles, and the like.

The sheet-like spacer 30 combined with the anisotropic conductive sheet 20 is positioned at a position corresponding to the pattern corresponding to the pattern of the protruding electrodes 1a of the semiconductor device 1, that is, the conductive path forming portion of the anisotropic conductive sheet 20. 21, the through holes 3 extend in the thickness direction.
1 is formed in a sheet-like insulating material, and each of the through holes 31 has a protruding portion 21 a of the conductive path forming portion 21 of the corresponding anisotropic conductive sheet 20 from the lower surface side opening.
Is inserted. In addition, the inside of the through hole 31 of the sheet-shaped spacer 30 is opened from the upper surface side opening thereof.
The corresponding protruding electrode 1a of the semiconductor device 1 to be connected
Are inserted so that the whole is located in the through hole 31.

The shape of each through-hole 31 of the sheet spacer 30 is not particularly limited, but may be, for example, a circle in consideration of the shape of the protruding electrode 1a and the shape of the protruding portion 21a of the anisotropic conductive sheet 20. It will be columnar. Through hole 3
The inner diameter r2 may be larger than any of the diameters (R and r1) so that the protruding electrode 1a and the protruding portion 21a of the anisotropic conductive sheet 20 are inserted. Protruding portion 21a of conductive sheet 20
It is preferable that the size has a margin with respect to the size of the diameter r1. Specifically, the size of the inner diameter r2 of the through hole 31 may be such that the ratio to the size of the diameter r1 of the protruding portion 21a is, for example, 1.05 to 2, preferably 1.1 to 1.8. preferable.

As the sheet-like spacer 30, the through holes 3
The thickness d is larger than the height H of the protruding electrode 1 a so that the tip of the protruding electrode 1 a inserted from the upper surface side opening of the first protruding electrode 1 a is positioned inside the through hole 31. That is, the height H of the projecting electrode 1a is
Is smaller than the thickness d.

The material of the sheet-like spacer 30 is preferably made of a heat-resistant insulating material having high dimensional stability. Specifically, a thermosetting resin such as a glass fiber reinforced epoxy resin or a polyimide resin; Thermoplastic resins such as polyethylene terephthalate resin, vinyl chloride resin, polystyrene resin, polyacrylonitrile resin, polyethylene resin, acrylic resin, polybutadiene resin, and other various insulating resins can be used. Resin is best.

The sheet-like spacer 30 can be obtained by forming a through hole 31 in such a sheet-like insulating material using, for example, a drilling device or a laser processing device by a numerical control method.

In the above, the thickness d of the sheet-like spacer 30 is determined by the height H of the projecting electrode 1a of the semiconductor device 1 and
Projecting portion 2 of conductive path forming portion 21 of anisotropic conductive sheet 20
It is necessary to be smaller than the sum of the height p and 1a. Then, the excess of the sum of the height H of the protruding electrode 1a and the height p of the protruding portion 21a with respect to the thickness d of the sheet-like spacer 30 represented by the formula (H + p−d) (hereinafter, referred to as “contact portion”). By controlling the magnitude of α,
Even when the semiconductor device 1 is pressed with a small pressing force, the protruding electrode 1a and the protruding portion 21a can be brought into contact with an appropriate force to reliably attain an electrical connection therebetween, and the anisotropic conductive property can be obtained. Excessive deformation of the conductive path forming portion 21 including the protruding portion 21a of the sheet 20 is avoided, so that a highly reliable operation can be obtained and the service life can be extended.

The difference α in the contact portion may be, for example, 0.01 to 1.2 mm.
To 1.0 mm, and particularly preferably 0.5 mm or less. In practice, the height H of the protruding electrode 1a of the semiconductor device 1 is in the range of 0.1 to 1 mm according to the standard.
Normally, a fixed value in the range of 0.2 to 0.5 mm is defined as a specified value. From this, in order to specifically adjust the difference thickness α of the contact portion, actually, The value of the thickness d of the sheet-like spacer 30 and the value of the height p of the protruding portion 21a may be appropriately selected in consideration of the height H of the protruding electrode 1a of the semiconductor device 1 to be connected.

If the above conditions are satisfied, the thickness d of the sheet-like spacer 30 and the value of the height p of the protruding portion 21a are not particularly limited. The specified value of the height H of 1a is, for example, 0.25 m
m, the thickness d of the sheet-like spacer 30 is:
For example, 0.26-1 mm, preferably 0.3-0.8 m
m, more preferably 0.3 to 0.7 mm, and the height p of the protruding portion 21a is, for example, 0.01 to 0.8 mm, preferably 0.02 to 0.7 mm, more preferably 0.0 to 0.7 mm.
3 to 0.5 mm.

As described above, the diameter of the conductive path forming portion 21 of the anisotropic conductive sheet 20, that is, the diameter r1 of the protruding portion 21a is different from the outer diameter R of the protruding electrode 1a of the semiconductor device 1 to be connected. It is preferable that the ratio is greater than or equal to the outer diameter R of the protruding electrode 1a.
It is preferably 1.5 or more. Actually, the outer diameter R of the projecting electrode 1a is 0.1 to 0.4 m according to the standard.
The constant value within the range of m is defined as a specified value, and the size of the diameter r1 of the protruding portion 21a is preferably larger than the outer diameter R of the protruding electrode 1a by 0.1 mm or more. A specific example of the diameter r1 of the portion 21a is, for example, 0.2 to 0.5 mm, and preferably 0.25 to 0.4 mm.
5 mm, more preferably 0.3 to 0.4 mm.

As described above, the dimension of the inner diameter r2 of the through hole 31 in the sheet-shaped spacer 30 is
The ratio of 1a to the diameter r1 is, for example, 1.05 to 1.05.
2, preferably 1.1 to 1.8, but specifically, for example, 0.2 to 1.2 m
m, preferably 0.2-1 mm, more preferably 0.3
０．６0.6 mm.

The anisotropic conductive connector 10 is used for electrical connection between the semiconductor device and, for example, a corresponding tester as follows. That is, on the lower surface side of the anisotropic conductive sheet 20, the connection electrode of the tester is electrically connected to the conductive path forming portion 21.
On the other hand, on the upper surface side of the anisotropic conductive sheet 20, the sheet-shaped spacer 30 is arranged in a state where the projecting portion 21a of the conductive path forming portion 21 is inserted into the through hole 31 from the opening on the lower surface side. An anisotropic conductive connector 10 is configured. Then, the semiconductor device 1 to be connected is disposed on the upper surface of the sheet-shaped spacer 30, and the protruding electrode 1 a of the semiconductor device 1 is inserted into the through hole 31 of the sheet-shaped spacer 30 from an opening on the upper surface thereof. State.

In this state, the semiconductor device 1 is pressed downward by an appropriate pressing device, so that the tip of the protruding electrode 1 a of the semiconductor device 1 in the through-hole 31 is electrically conductive by the conductive material of the anisotropic conductive sheet 20. Projecting portion 21 of road forming portion 21
This is pressed against the upper surface of a. As a result, the conductive path forming portion 21 is compressed by the pressure of the protruding electrode 1a and its resistance value is reduced to have sufficient conductivity, that is, the protruding electrode 1a is electrically connected to the conductive path forming portion 21. As a result, a state in which the protruding electrode 1a of the semiconductor device 1 and the corresponding connection electrode of the tester are electrically connected via the conductive path forming portion 21 is realized. Then, in this state, an electrical operation test of the semiconductor device 1 is performed by the tester.

The anisotropic conductive connector 10 described above
In the above, in the through hole 31 of the sheet-shaped spacer 30,
Projection portion 2 of anisotropic conductive sheet 20 from its lower surface side opening
1a and the protruding electrode 1a of the semiconductor device 1 is inserted from the opening on the upper surface thereof, so that the through hole 31
Exerts a function as a guide, it is very easy to realize a state in which the protruding electrode 1a is accurately aligned with the corresponding conductive path forming portion 21 of the anisotropic conductive sheet 20.

Although the height H of the protruding electrode 1a is smaller than the thickness d of the sheet-like spacer 30, the anisotropic conductive sheet 2
0 of the conductive path forming portion 21 is the through hole 3
1 and the sum of the height p of the protruding portion 21a and the height H of the protruding electrode 1a is larger than the thickness d of the sheet-like spacer 30, so that the through hole 31
The tip of the protruding electrode 1a surely projects into
a. Therefore, by regulating the thickness d of the sheet-shaped spacer 30 and the height p of the protruding portion 21a, required electric connection can be reliably performed while absorbing variations in the height H of the protruding electrodes 1a. Can be achieved.

More specifically, the degree of deformation of the protruding portion 21a of the conductive path forming portion 21 in the anisotropic conductive sheet 20 is usually, for example, in the range of 10 to 30%, preferably 13 to 30%. 25%, more preferably 15-2
Although it is desirable to be within the range of 0%, by using the sheet-like spacer 30 satisfying the above conditions, the actual degree of deformation of the anisotropic conductive sheet 20 combined with the sheet-like spacer 30 can be reduced. Thus, the anisotropic conductive sheet 20 can have a desired conductive action and a long service life.

The protruding portion 21a of the conductive path forming portion 21 inserted into the through hole 31 has an insulating portion 22 around the protruding portion 21a.
While being not restrained by the spacers, they can be deformed at a relatively large rate in the through holes 31, while the sheet-shaped spacers 30 allow the protrusion electrodes 1 of the semiconductor device 1 to be deformed.
is prohibited from acting on the protruding portion 21a of the conductive path forming portion 21 by a certain degree or more. As a result, as described above, the protruding electrode 1a and the conductive path forming portion 2
A long service life is obtained for the anisotropic conductive sheet 20 while achieving the required electrical connection between the two.

Further, since the contact between the protruding electrode 1a and the protruding portion 21a is achieved in the through hole 31, the contact portion is not exposed to the outside, and as a result, foreign substances such as dust are not exposed to the contact. No entry is made, so that the desired electrical connection is not impaired by such contaminants.

In the above description, the protruding portion 21a, which is in contact with the protruding electrode 1a, can be deformed or displaced by itself because it is a space around the protruding portion 21a and has nothing to bind. Since the contact with the electrode 1a is achieved in the through hole 31 of the sheet-like spacer 30,
The contact state and the mutual positional relationship between the protruding electrode 1a and the protruding portion 21a are held by the inner peripheral surface of the through-hole 31, so that a large fluctuation is prevented. here,
The through hole 31 into which the protruding portion 21a is inserted preferably has a ratio of the diameter of the opening on the lower surface side (the inner diameter r2 of the through hole 31) to the diameter r1 of the protruding portion 21a of 1.05 to 2. . By satisfying such conditions, the degree of deformation of the protruding portion 21a can be restricted to the above-described preferable range, and as a result, a long service life of the anisotropic conductive sheet 20 can be obtained.

The through hole 3 with respect to the diameter r1 of the projecting portion 21a
If the ratio of the inner diameter r2 of the opening on the lower surface side of the lower surface 1a is too large, the positioning of the projection electrode 1a with respect to the protruding portion 21a may be insufficient. Projection 2 pressed by electrode 1a
As a result of the deformation in the plane direction of 1a being hindered by the inner peripheral surface of the through-hole 31, the required deformation does not occur in the protruding portion 21a, so that the height variation of the protruding electrode 1a cannot be effectively absorbed, Alternatively, sufficient electrical connection may not be achieved.

FIG. 4 is an explanatory sectional view showing another example of the configuration of the main part of the anisotropic conductive connector of the present invention together with the semiconductor device to be connected. The semiconductor device 1 of this example includes:
1 has the same configuration as that shown in FIG. 1, but the through-hole 41 of the sheet-like spacer 40 constituting the anisotropic conductive connector has a small-diameter upper through-hole portion 4 that opens to the upper surface side.
1a and a lower through-hole portion 41b continuous with the upper through-hole portion 41a via a step 43.
The upper through-hole portion 41a has a diameter slightly larger than the diameter of the projecting electrode 1a so that the projecting electrode 1a of the semiconductor device 1 is inserted from the upper surface side opening, while the lower through-hole portion 41b has The diameter of the anisotropic conductive sheet 20 is slightly larger than that of the protruding portion 21a so that the protruding portion 21a of the anisotropic conductive sheet 20 is inserted from the lower surface side opening.

In this example, basically, the thickness d of the sheet-like spacer 30, the projection height H of the projecting electrode 1 a of the semiconductor device 1, and the projecting portion of the conductive path forming portion 21 of the anisotropic conductive sheet 20 The numerical relationship of the three with a height p of 21a is:
It is necessary that the difference thickness α of the contact portion satisfies the same condition as in the example of FIG. 1, and the height of the upper through-hole portion 41 a in the through-hole 41 (from the upper surface to the step portion 43).
It is necessary that the height d1 of the projection electrode 1a be smaller than the height H of the projection electrode 1a. Specifically, the tip of the protruding electrode 1a of the semiconductor device 1 disposed on the upper surface of the sheet-like spacer 30 is in a state of protruding beyond the step 43 into the lower through-hole portion 41b, and the protruding distance is reduced. , For example, 0.01 mm or more, preferably 0.02
mm or more.

The diameter of the lower through hole portion 41b of the through hole 41, that is, the size of the inner diameter r2 of the lower surface side opening is determined by the diameter r1 of the projecting portion 21a of the conductive path forming portion 21 of the anisotropic conductive sheet 20 inserted therein. The ratio is set to 1.05 to 2 as in the example of FIG. The ratio of the diameter of the upper through-hole portion 41a of the through-hole 41, that is, the size of the inner diameter r3 of the upper surface side opening to the outer diameter R of the protruding electrode 1a of the semiconductor device 1 inserted therein is as shown in FIG.
Is in the same range as in the example.

Then, the upper through hole portion 41 of the through hole 41
The difference between the inner diameter r3 of the lower through-hole 41a and the inner diameter r2 of the lower through-hole 41b is not particularly limited. For example, the difference between the inner diameter r2 of the lower through-hole 41b and the inner diameter r3 of the upper through-hole 41a is not limited. The size ratio is in a range of 1.1 to 2.0.

In the anisotropic conductive connector having such a configuration, the outer diameter R of the projecting electrode 1a of the semiconductor device 1 is smaller than the diameter r1 of the protruding portion 21a of the conductive path forming portion 21 of the anisotropic conductive sheet 20. Is quite small, but the same operation and effect as in the example of FIG. 1 can be obtained.
Can be accurately positioned with respect to the protruding portion 21a, and a sufficient electrical connection between them can be reliably realized.

In the anisotropically conductive connector of the present invention, it is not essential that the anisotropically conductive sheet 20 and the sheet-like spacer 30 are separate bodies. May be formed integrally with the anisotropic conductive sheet 20 with the protruding portion 21a inserted from the opening on the lower surface side. According to such an integrated anisotropic conductive connector, there is an advantage that handling is easy.

According to the inspection apparatus of the present invention, since the above-described anisotropically conductive connector is provided, the electrical operation of the semiconductor device to be inspected can be performed due to various features of the anisotropically conductive connector. The inspection can be easily performed with high reliability.

[0058]

EXAMPLES The present invention will now be described by way of specific examples, which should not be construed as limiting the invention thereto. <Example 1> A package LSI was used as a semiconductor device to be inspected. This package LSI has a specified outer diameter of 0.3 mm and a specified height of 0.25 mm.
Are provided at a pitch of 0.5 mm. A sheet forming material was prepared by mixing conductive magnetic particles made of gold-plated nickel having an average particle size of 40 μm with a paste-like thermosetting silicone rubber at a ratio of 12% by volume, as shown in FIG. The sheet forming material was used to form a sheet forming material layer (20A) in the mold (50). In the mold (50), one template (51) and the other template (52) are arranged in parallel and opposed to each other, and the upper surface of the one template (51) and the other template are arranged. Electromagnets (53, 54) on the lower surface of (52)
In one template (51) and the other template (52), a desired conductive path forming portion (51) is formed on a plate-shaped base material (51a, 52a) made of a ferromagnetic material. 2
A ferromagnetic portion (M) is formed according to a pattern opposite to the arrangement pattern of 1), and a non-magnetic portion (N) is formed in a portion other than the ferromagnetic portion (M).

By operating the electromagnets (53, 54), the ferromagnetic portion (M) of one template (51) is shifted from the corresponding ferromagnetic portion (M) of the other template (52). A parallel magnetic field acts in the direction toward M), and in the sheet forming material layer (20A), the conductive magnetic material particles dispersed in the sheet forming material layer (20A) become one of the template (51). ) And the corresponding portion of the other template (52) located between the ferromagnetic portion (M) and the corresponding ferromagnetic portion (M) are oriented and, in this state, pressure is applied. While heating at 100 ° C. for 1 hour, the sheet forming material layer is cured to form an anisotropic conductive sheet (20).
Was manufactured. The obtained anisotropic conductive sheet (20) has a protruding portion (21a) having a diameter of 0.25 mm and a height of 0.07 mm.
mm.

On the other hand, a sheet-like insulating material having a thickness of 0.27 mm made of a glass fiber reinforced epoxy resin was prepared, and the inner diameter of the sheet-like insulating material was adjusted to a position corresponding to the protruding electrode by a laser processing apparatus. A 0.35 mm through hole was formed to produce a sheet spacer.

Using the anisotropic conductive sheet (20) and the sheet spacer (30) obtained as described above,
An inspection apparatus including the anisotropic conductive connector (10) shown in FIG. 1 was configured, and an electrical inspection was performed on 100 package LSIs manufactured in the same process.
The set of each semiconductor device was extremely easy, and the electrical operation test could be accurately performed on all the package LSIs.

[0062]

According to the anisotropic conductive connector of the present invention, the projecting portion of the conductive path forming portion of the anisotropic conductive sheet is inserted into the through hole of the sheet-like spacer from the opening on the lower surface thereof. Since the protruding electrode of the semiconductor device is inserted from the upper side opening, a state where the protruding electrode is inevitably accurately aligned with the corresponding conductive path forming portion is realized, and the height of the protruding electrode is increased. Is smaller than the thickness of the sheet-shaped spacer, but the projecting portion of the conductive path forming portion of the anisotropic conductive sheet enters the through hole from the opening on the lower surface side of the sheet-shaped spacer, and the protrusion electrode of the semiconductor device has The sum (H + p) of the height H and the height p of the protruding portion of the conductive path forming portion of the anisotropic conductive sheet is set to be larger than the thickness d of the sheet-shaped spacer, and the protrusion has a large degree of freedom in deformation. Part exists More, while absorbing the variation in height in the protrusion electrodes, the protrusion electrodes and the conductive path forming portion in the through hole is securely Taise' is electrically connected state is obtained.

The protruding portion of the conductive path forming portion of the anisotropic conductive sheet can be deformed at a relatively large rate in the through hole because its periphery is not restrained, and the sheet-like spacer is interposed. As a result, the pressing force given by the protruding electrode to the protruding portion of the conductive path forming portion of the anisotropic conductive sheet is prevented from being excessive, and the required electrical connection is achieved as described above. while doing,
A long service life is obtained for the anisotropic conductive sheet.

Moreover, the contact between the protruding electrode of the semiconductor device and the protruding portion of the conductive path forming portion is achieved in the through hole of the sheet-like spacer and the contact is not exposed to the outside. Such foreign substances do not enter, so that the intended electrical connection is not hindered by such foreign substances.

In the anisotropic conductive connector of the present invention, the diameter of the through hole of the sheet-like spacer relative to the diameter of the protruding portion of the conductive path forming portion is defined in a specific range. It is possible to regulate the degree of deformation, thereby preventing excessive deformation, so that the anisotropic conductive sheet can have a long service life.

According to the inspection apparatus of the present invention, the provision of the above-described anisotropic conductive connector makes it possible to easily perform the electrical operation inspection of the semiconductor device to be inspected with high reliability. .

[Brief description of the drawings]

FIG. 1 is an explanatory sectional view showing, in an enlarged manner, a contact state of a protruding electrode of a semiconductor device with a conductive path forming portion of an anisotropic conductive sheet in an example of the anisotropic conductive connector of the present invention.

FIG. 2 is an explanatory cross-sectional view showing a state before conductive magnetic particles in a sheet forming material layer are oriented in an example of manufacturing the anisotropic conductive sheet of FIG. 1;

3 is an explanatory cross-sectional view showing a state after conductive magnetic particles in a sheet forming material layer are oriented in an example of the production of the anisotropic conductive sheet in FIG. 1;

FIG. 4 is an enlarged cross-sectional view illustrating a contact state of a protruding electrode of a semiconductor device with a conductive path forming portion of an anisotropic conductive sheet in another example of the anisotropic conductive connector of the present invention.

FIG. 5 is an enlarged cross-sectional view illustrating a contact state of a protruding electrode of a semiconductor device with a conductive path forming portion of an anisotropic conductive sheet.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor device 1a Protruding electrode 10 Anisotropic conductive connector 20 Anisotropic conductive sheet 20A Sheet forming material layer 21 Conductive path forming part 21a Projecting part 22 Insulating part 30, 40 Sheet spacer 31, 41 Through hole 41a Upper through hole part 41b Lower through-hole portion 43 Step 50 Mold 51 One template 52 The other template 51a, 52a Base material 53, 54 Electromagnet 55 Spacer 60 Anisotropic conductive sheet 61 Conductive path forming part 62 Insulating part

Claims (6)

[Claims] 1. An anisotropic conductive sheet each having a conductive path forming portion extending in a thickness direction and protruding to the upper surface side, and a sheet-like spacer arranged on the upper surface of the anisotropic conductive sheet, Disposed on the upper surface of the sheet-shaped spacer,
An anisotropic conductive connector for electrically connecting a semiconductor device having a projecting electrode on a lower surface, wherein the sheet-shaped spacer has a through hole extending in a thickness direction, and an upper surface of the anisotropic conductive sheet. The protruding portion of the conductive path forming portion is inserted into the through hole of the sheet-shaped spacer from the lower surface side opening, and the projecting electrode of the semiconductor device is inserted into the through hole of the sheet-shaped spacer from the upper surface side opening, The thickness of the sheet-like spacer is larger than the height of the projecting electrode of the semiconductor device, and the height H of the projecting electrode of the semiconductor device and the height p of the projecting portion of the conductive path forming portion of the anisotropic conductive sheet. (H + p) is greater than the thickness d of the sheet-shaped spacer. 2. The thickness d of the sheet-like spacer is determined from the sum (H + p) of the height H of the projecting electrode of the semiconductor device and the height p of the projecting portion of the conductive path forming portion of the anisotropic conductive sheet. The value α of the difference (H + p−d) obtained by subtracting the value is 0.01 to 0.5 mm
The anisotropic conductive connector according to claim 1, wherein: 3. The ratio of the size of the inner diameter r2 of the lower surface side opening of the through hole of the sheet-like spacer to the diameter r1 of the protruding portion of the conductive path forming portion of the anisotropic conductive sheet is 1.05 to 2. The anisotropically conductive connector according to claim 1 or 2, wherein: 4. The through hole of the sheet-shaped spacer has an upper through hole portion and a lower through hole portion having a diameter different from that of the upper through hole portion.
The anisotropic conductive connector according to any one of the above. 5. The anisotropically conductive connector according to claim 1, wherein the sheet-like spacer is provided integrally with the anisotropically conductive sheet. 6. An inspection device for performing an electrical operation inspection of a semiconductor device having a protruding electrode, wherein the inspection device includes the anisotropic conductive connector according to claim 1. An inspection apparatus characterized in that: