JP2001066779A5 - - Google Patents

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JP2001066779A5
JP2001066779A5 JP1999243346A JP24334699A JP2001066779A5 JP 2001066779 A5 JP2001066779 A5 JP 2001066779A5 JP 1999243346 A JP1999243346 A JP 1999243346A JP 24334699 A JP24334699 A JP 24334699A JP 2001066779 A5 JP2001066779 A5 JP 2001066779A5
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group
acid
branched
linear
photosensitive composition
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JP2001066779A (en
JP3982958B2 (en
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Claims (7)

(a)活性光線又は放射線の照射により酸を発生する下記一般式(I)〜(III)で表される化合物の少なくとも一種、
(b)酸の作用により分解し、アルカリ現像液中での溶解度を増大させる基を有する樹脂、及び
(c)塩基性含窒素化合物、
を含有することを特徴とするボジ型感光性組成物。
Figure 2001066779
(式中、R1 〜R37は水素原子、直鎖、分岐、環状アルキル基、直鎖、分岐、環状アルコキシ基、ヒドロキシ基、ハロゲン原子、または−S−R38基を表す。R38は直鎖、分岐、環状アルキル基またはアリール基を表す。但し、R1〜R15のうちの少なくとも1つ、R16〜R27のうちの少なくとも1つ及びR28〜R37のうちの少なくとも1つがヒドロキシ基
又はアルコキシ基である。
-は分岐または環状の炭素数8個以上のアルキル基およびアルコキシ基の群の中から選ばれる基を少なくとも1個有するか、直鎖、分岐または環状の炭素数4〜7のアルキル基およびアルコキシ基の群の中から選ばれる基を少なくとも2個有するか、若しくは直鎖、分岐または環状の炭素数1〜3のアルキル基およびアルコキシ基の群の中から選ばれる基を少なくとも3個有するベンゼンスルホン酸、ナフタレンスルホン酸またはアントラセンスルホン酸のアニオンを表す。
あるいはエステル基、R39−CO−基、R40−CONH−基、R41−NH−基、R42−OCONH−基、R43−NHCOO−基、R44−NHCONH−基、R45−NHCSN−基、R46−SO2NH−基およびニトロ基の群の中から選ばれる基を少なくとも1個有するベンゼンスルホン酸、ナフタレンスルホン酸またアンアトラセンスルホン酸のアニオンを表す。R39〜R46は直鎖、分岐もしくは環状アルキル基またはアリール基を表す。)
(A) at least one compound represented by the following general formulas (I) to (III) that generates an acid upon irradiation with an actinic ray or radiation;
(B) a resin having a group that decomposes by the action of an acid and increases the solubility in an alkaline developer, and (c) a basic nitrogen-containing compound,
A body-type photosensitive composition comprising:
Figure 2001066779
(Wherein, R 1 to R 37 is a hydrogen atom, a linear, branched, cyclic alkyl group, a linear, branched, cyclic alkoxy group, hydroxy group, .R 38 represents a halogen atom or -S-R 38 group, the Represents a linear, branched, cyclic alkyl group or aryl group, provided that at least one of R 1 to R 15 , at least one of R 16 to R 27 and at least one of R 28 to R 37 ; One is a hydroxy group or an alkoxy group.
X has at least one group selected from the group consisting of branched or cyclic alkyl groups having 8 or more carbon atoms and alkoxy groups, or linear, branched or cyclic alkyl groups having 4 to 7 carbon atoms and alkoxy groups. Benzenesulfone having at least two groups selected from the group of groups, or having at least three groups selected from the group of linear, branched or cyclic alkyl groups having 1 to 3 carbon atoms and alkoxy groups It represents an anion of acid, naphthalene sulfonic acid or anthracene sulfonic acid.
Alternatively, ester group, R 39 —CO— group, R 40 —CONH— group, R 41 —NH— group, R 42 —OCONH— group, R 43 —NHCOO— group, R 44 —NHCONH— group, R 45 —NHCSN -Represents an anion of benzenesulfonic acid, naphthalenesulfonic acid or an anthracenesulfonic acid having at least one group selected from the group consisting of-group, R 46 -SO 2 NH- group and nitro group. R 39 to R 46 represent a linear, branched or cyclic alkyl group or an aryl group. )
一般式(1)〜(3)で表される化合物において、R1〜R15のうちの少なくとも1つ、R16〜R27のうちの少なくとも1つ及びR28〜R37のうちの少なくとも1つがヒドロキシ基であり、かつ該ヒドロキシ基の両隣接位が水素原子でないことを特徴とする請求項1記載のポジ型感光性組成物。In the compounds represented by the general formulas (1) to (3), at least one of R 1 to R 15 , at least one of R 16 to R 27 , and at least one of R 28 to R 37 2. The positive photosensitive composition according to claim 1, wherein one is a hydroxy group, and both adjacent positions of the hydroxy group are not hydrogen atoms. (d)酸により分解し得る基を有し、アルカリ現像液中での溶解度が酸の作用により増大する、分子量3000以下の低分子溶解阻止化合物を、更に含有することを特徴とする請求項1又は2に記載のポジ型感光性組成物。  (D) A low molecular weight dissolution inhibiting compound having a molecular weight of 3000 or less, which further has a group decomposable by an acid and whose solubility in an alkaline developer is increased by the action of an acid. Or the positive photosensitive composition of 2. (a)請求項1記載の活性光線の照射により酸を発生する一般式(I)〜(III)で表される化合物の少なくとも一種、
(c)塩基性含窒素化合物、
(d)酸により分解し得る基を有し、アルカリ現像液中での溶解度が酸の作用により増大する、分子量3000以下の低分子溶解阻止化合物、及び
(e)水に不溶でアルカリ現像液に可溶な樹脂
を含有することを特徴とするポジ型感光性組成物。
(A) at least one compound represented by general formulas (I) to (III) that generates an acid upon irradiation with actinic rays according to claim 1;
(C) a basic nitrogen-containing compound,
(D) a low molecular weight dissolution inhibiting compound having a molecular weight of 3000 or less, which has a group that can be decomposed by an acid, and whose solubility in an alkaline developer is increased by the action of an acid; and (e) an insoluble in water that is insoluble in water. A positive photosensitive composition comprising a soluble resin.
(b)酸の作用により分解し、アルカリ現像液中での溶解度を増大させる基を有する樹脂が、下記一般式(IV)及び(V)から選択される少なくとも1つの繰り返し構造単位を含む樹脂であることを特徴とする請求項1〜4のいずれかに記載のポジ型感光性組成物。
Figure 2001066779
(上記式中、Lは、水素原子、置換されてもよい、直鎖、分岐もしくは環状のアルキル基、又は置換されていてもよいアラルキル基を表す。
Zは、置換されてもよい、直鎖、分岐もしくは環状のアルキル基、又は置換されていてもよいアラルキル基を表す。またZとLが結合して5又は6員環を形成してもよい。)
(B) The resin having a group that decomposes under the action of an acid and increases the solubility in an alkaline developer is a resin containing at least one repeating structural unit selected from the following general formulas (IV) and (V) The positive photosensitive composition according to claim 1, wherein the positive photosensitive composition is present.
Figure 2001066779
(In the above formula, L represents a hydrogen atom, an optionally substituted linear, branched or cyclic alkyl group, or an optionally substituted aralkyl group.
Z represents a linear, branched or cyclic alkyl group which may be substituted, or an aralkyl group which may be substituted. Z and L may combine to form a 5- or 6-membered ring. )
(b)酸の作用により分解し、アルカリ現像液中での溶解度を増大させる基を有する樹脂が、請求項5記載の一般式(IV)及び(V)から選択される少なくとも1つの繰り返し構造単位を含む樹脂であって、且つZが置換されたアルキル基又は置
換されたアラルキル基であることを特徴とする請求項5記載のポジ型感光性組成物。
(B) at least one repeating structural unit selected from the general formulas (IV) and (V) according to claim 5, wherein the resin having a group that decomposes by the action of an acid and increases the solubility in an alkaline developer The positive photosensitive composition according to claim 5, wherein Z is a substituted alkyl group or a substituted aralkyl group.
請求項1〜6のいずれかに記載のポジ型感光性組成物により膜を形成し、当該膜を露光、現像することを特徴とするパターン形成方法。A pattern forming method comprising: forming a film with the positive photosensitive composition according to claim 1, and exposing and developing the film.
JP24334699A 1999-08-30 1999-08-30 Positive photosensitive composition Expired - Fee Related JP3982958B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24334699A JP3982958B2 (en) 1999-08-30 1999-08-30 Positive photosensitive composition

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JP2001066779A5 true JP2001066779A5 (en) 2005-07-07
JP3982958B2 JP3982958B2 (en) 2007-09-26

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4092083B2 (en) * 2001-03-21 2008-05-28 富士フイルム株式会社 Negative resist composition for electron beam or X-ray
US7192681B2 (en) * 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US6773474B2 (en) * 2002-04-19 2004-08-10 3M Innovative Properties Company Coated abrasive article
JP4414721B2 (en) * 2002-11-22 2010-02-10 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
KR101036501B1 (en) 2002-11-22 2011-05-24 후지필름 가부시키가이샤 Positive resist composition and patern forming method using the same
JP4115309B2 (en) 2003-03-24 2008-07-09 富士フイルム株式会社 Positive resist composition
JP4491335B2 (en) * 2004-02-16 2010-06-30 富士フイルム株式会社 Photosensitive composition, compound used for photosensitive composition, and pattern formation method using the photosensitive composition
US7449573B2 (en) 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
JP2011095623A (en) * 2009-10-30 2011-05-12 Jsr Corp Radiation-sensitive resin composition for liquid immersion exposure and pattern forming method
JP5504080B2 (en) * 2010-07-13 2014-05-28 富士フイルム株式会社 Method for producing vinyl ether compound

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