JP2001066762A5 - - Google Patents

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Publication number
JP2001066762A5
JP2001066762A5 JP1999272045A JP27204599A JP2001066762A5 JP 2001066762 A5 JP2001066762 A5 JP 2001066762A5 JP 1999272045 A JP1999272045 A JP 1999272045A JP 27204599 A JP27204599 A JP 27204599A JP 2001066762 A5 JP2001066762 A5 JP 2001066762A5
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JP
Japan
Prior art keywords
present
hexamethyle
disilane
hmds
baking
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Pending
Application number
JP1999272045A
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Japanese (ja)
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JP2001066762A (en
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Publication date
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Priority to JP27204599A priority Critical patent/JP2001066762A/en
Priority claimed from JP27204599A external-priority patent/JP2001066762A/en
Priority to US09/598,452 priority patent/US6338924B1/en
Publication of JP2001066762A publication Critical patent/JP2001066762A/en
Publication of JP2001066762A5 publication Critical patent/JP2001066762A5/ja
Pending legal-status Critical Current

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次に、本発明の第２の実施形態について説明する。図３は、本発明の第２の実施形態による近接場光露光用マスクを作製する手順を概略的に示すものである。ここではまず、平坦な石英ガラス板からなるマスク母材10の一表面に、密着性強化のためのＨＭＤＳ（hexamethyle disilazane）処理を施した後、該表面に電子ビームレジスト30を塗布し、それをベーキングする（同図(1)）。次にチャージアップ防止のために金を厚さ10ｎｍ程度蒸着する。
Next, a second embodiment of the present invention will be described. FIG. 3 schematically shows a procedure for producing a near-field light exposure mask according to a second embodiment of the present invention. Here, first of all, one surface of a mask base material 10 made of a flat quartz glass plate is subjected to HMDS (hexamethyle disilane) treatment for adhesion enhancement, and then an electron beam resist 30 is applied to the surface and then treated. Baking (the same figure (1)). Next, gold is deposited to a thickness of about 10 nm to prevent charge up.

JP27204599A 1999-06-22 1999-09-27 Mask for proximity field optical exposure and manufacture thereof Pending JP2001066762A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP27204599A JP2001066762A (en) 1999-06-22 1999-09-27 Mask for proximity field optical exposure and manufacture thereof
US09/598,452 US6338924B1 (en) 1999-06-22 2000-06-22 Photomask for near-field exposure having opening filled with transparent material

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-175630 1999-06-22
JP17563099 1999-06-22
JP27204599A JP2001066762A (en) 1999-06-22 1999-09-27 Mask for proximity field optical exposure and manufacture thereof

Publications (2)

Publication Number Publication Date
JP2001066762A JP2001066762A (en) 2001-03-16
JP2001066762A5 true JP2001066762A5 (en) 2005-06-09

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ID=26496837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27204599A Pending JP2001066762A (en) 1999-06-22 1999-09-27 Mask for proximity field optical exposure and manufacture thereof

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JP (1) JP2001066762A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012169474A (en) * 2011-02-15 2012-09-06 Tokyo Electron Ltd Substrate processing apparatus, substrate processing method, and memory medium
JP5774536B2 (en) 2012-03-30 2015-09-09 株式会社東芝 Near-field exposure mask and pattern forming method
US11042098B2 (en) * 2019-02-15 2021-06-22 Applied Materials, Inc. Large area high resolution feature reduction lithography technique

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