JP2001066762A5 - - Google Patents

Download PDF

Info

Publication number
JP2001066762A5
JP2001066762A5 JP1999272045A JP27204599A JP2001066762A5 JP 2001066762 A5 JP2001066762 A5 JP 2001066762A5 JP 1999272045 A JP1999272045 A JP 1999272045A JP 27204599 A JP27204599 A JP 27204599A JP 2001066762 A5 JP2001066762 A5 JP 2001066762A5
Authority
JP
Japan
Prior art keywords
present
hexamethyle
disilane
hmds
baking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999272045A
Other languages
Japanese (ja)
Other versions
JP2001066762A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP27204599A priority Critical patent/JP2001066762A/en
Priority claimed from JP27204599A external-priority patent/JP2001066762A/en
Priority to US09/598,452 priority patent/US6338924B1/en
Publication of JP2001066762A publication Critical patent/JP2001066762A/en
Publication of JP2001066762A5 publication Critical patent/JP2001066762A5/ja
Pending legal-status Critical Current

Links

Images

Description

次に、本発明の第２の実施形態について説明する。図３は、本発明の第２の実施形態による近接場光露光用マスクを作製する手順を概略的に示すものである。ここではまず、平坦な石英ガラス板からなるマスク母材10の一表面に、密着性強化のためのＨＭＤＳ（hexamethyle disilazane）処理を施した後、該表面に電子ビームレジスト30を塗布し、それをベーキングする（同図(1)）。次にチャージアップ防止のために金を厚さ10ｎｍ程度蒸着する。
Next, a second embodiment of the present invention will be described. FIG. 3 schematically shows a procedure for producing a near-field light exposure mask according to a second embodiment of the present invention. Here, first of all, one surface of a mask base material 10 made of a flat quartz glass plate is subjected to HMDS (hexamethyle disilane) treatment for adhesion enhancement, and then an electron beam resist 30 is applied to the surface and then treated. Baking (the same figure (1)). Next, gold is deposited to a thickness of about 10 nm to prevent charge up.

JP27204599A 1999-06-22 1999-09-27 Mask for proximity field optical exposure and manufacture thereof Pending JP2001066762A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP27204599A JP2001066762A (en) 1999-06-22 1999-09-27 Mask for proximity field optical exposure and manufacture thereof
US09/598,452 US6338924B1 (en) 1999-06-22 2000-06-22 Photomask for near-field exposure having opening filled with transparent material

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP17563099 1999-06-22
JP11-175630 1999-06-22
JP27204599A JP2001066762A (en) 1999-06-22 1999-09-27 Mask for proximity field optical exposure and manufacture thereof

Publications (2)

Publication Number Publication Date
JP2001066762A JP2001066762A (en) 2001-03-16
JP2001066762A5 true JP2001066762A5 (en) 2005-06-09

Family

ID=26496837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27204599A Pending JP2001066762A (en) 1999-06-22 1999-09-27 Mask for proximity field optical exposure and manufacture thereof

Country Status (1)

Country Link
JP (1) JP2001066762A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012169474A (en) * 2011-02-15 2012-09-06 Tokyo Electron Ltd Substrate processing apparatus, substrate processing method, and memory medium
JP5774536B2 (en) 2012-03-30 2015-09-09 株式会社東芝 Near-field exposure mask and pattern forming method
US11042098B2 (en) * 2019-02-15 2021-06-22 Applied Materials, Inc. Large area high resolution feature reduction lithography technique

Similar Documents

Publication Publication Date Title
JP2003534651A (en) Method for producing template and template produced by the method
KR970022491A (en) Photosensitive resin composition, photosensitive film, manufacturing method of phosphor frame using them, surface treated phosphor and manufacturing method thereof
JP2002270541A (en) Mold method of manufacturing mold, and method of forming pattern
JP2001066762A5 (en)
JP3705340B2 (en) Thick film pattern forming letterpress, thick film pattern forming method using the same, and thick film pattern forming letterpress manufacturing method
JPS60230650A (en) Formation of fine pattern
JPS5819127B2 (en) Fine pattern formation method
JPS60122944A (en) Manufacture of mask for making pattern
JP2921507B2 (en) Electron beam exposure mask and method of manufacturing the same
JP2004230471A (en) Ceramic fine pattern forming method
JP2583988B2 (en) Method for manufacturing semiconductor device
JPH04276618A (en) X-ray mask with high resolution including absorber pattern having high aspect ratio
TW364204B (en) Method for producing semiconductor capacitor of the semiconductor and its eletrode plate
JPH02172041A (en) Manufacture of stamper for optical disk
JPH01303406A (en) Method of duplicating diffraction grating
JPH0385544A (en) Resist pattern forming method
TWI286787B (en) Lithography process
JP2000347420A5 (en)
JPH03237458A (en) Fine pattern forming method
JP4312841B2 (en) Molecular pattern replication method
JPH02295107A (en) Manufacture of semiconductor device
JPS63144520A (en) Pattern formation
JPS62135821A (en) Formation of pattern
JPH02262150A (en) Photosensitive composition and pattern forming method
JPH0513325A (en) Pattern formation method