JP2001064768A - Sputtering target for forming optical recording protective film - Google Patents

Sputtering target for forming optical recording protective film

Info

Publication number
JP2001064768A
JP2001064768A JP24272399A JP24272399A JP2001064768A JP 2001064768 A JP2001064768 A JP 2001064768A JP 24272399 A JP24272399 A JP 24272399A JP 24272399 A JP24272399 A JP 24272399A JP 2001064768 A JP2001064768 A JP 2001064768A
Authority
JP
Japan
Prior art keywords
target
optical recording
protective film
mol
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP24272399A
Other languages
Japanese (ja)
Inventor
Jinko Kyo
仁鎬 姜
Junichi Oda
淳一 小田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP24272399A priority Critical patent/JP2001064768A/en
Publication of JP2001064768A publication Critical patent/JP2001064768A/en
Withdrawn legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To minimize the deviation of the oxygen concentration of an optical recording protective film formed by the use of a target from the oxygen concentration of the target by providing a composition consisting of specific percentages of silicon dioxide and Si and the balance zinc chalcogenide. SOLUTION: The sputtering target for forming an optical recording protective film has a composition consisting of 10-30 mol.% silicon dioxide, 1-10 mol.% Si, and the balance zinc chalcogenide. Zinc sulfide is most suitably used as the zinc chalcogenide. By performing sputtering by the use of this target, no strong deviation of the composition ratio of oxygen contained in the resultant optical recording protective film from the composition ratio of oxygen contained in the target is brought about. Accordingly, the formation of inferior optical recording protective films can be minimized and yield can be improved, and the productive efficiency of an optical disk, etc., can be improved and also cost reduction can be attained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、レーザーを用い
て情報の記録および消去を行うことのできる相変化型光
ディスクなどの光記録保護膜を形成するためのカルコゲ
ン化亜鉛−二酸化ケイ素焼結体からなる光記録保護膜形
成用スパッタリングターゲットに関するものであり、特
に、ターゲットとこのターゲットを用いて形成された光
記録保護膜との酸素濃度のずれの極めて少ない光記録保
護膜形成用スパッタリングターゲットに関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a zinc-chalcogenide-silicon dioxide sintered body for forming an optical recording protection film such as a phase change type optical disk capable of recording and erasing information by using a laser. The present invention relates to a sputtering target for forming an optical recording protection film, and particularly to a sputtering target for forming an optical recording protection film having a very small difference in oxygen concentration between the target and an optical recording protection film formed using the target. is there.

【0002】[0002]

【従来の技術】一般に、光記録保護膜は、二酸化ケイ素
粉末とカルコゲン化亜鉛[硫化亜鉛(ZnS)、セレン
化亜鉛(ZnSe)、テルル化亜鉛(ZnTe)の総
称]粉末の混合粉末を焼結して得られた焼結体からなる
円盤状ターゲットを用いスパッタすることにより形成さ
れることは知られており、通常は、二酸化ケイ素粉末と
硫化亜鉛粉末からなる混合粉末を焼結して得られた相対
密度が90%以上の焼結体からなる円盤状ターゲットを
用いてスパッタすることにより形成する。この二酸化ケ
イ素と硫化亜鉛からなる円盤状ターゲットは、純度:9
9.999重量%以上の硫化亜鉛粉末に対し、純度:9
9.999重量%以上の二酸化ケイ素粉末を10〜30
mol%添加し均一に混合し、得られた混合粉末を円盤
状に加圧成形したのち焼結することにより製造すること
も知られている(特開平6−65725号公報参照)。
2. Description of the Related Art In general, an optical recording protective film is formed by sintering a mixed powder of silicon dioxide powder and zinc chalcogenide [generic name of zinc sulfide (ZnS), zinc selenide (ZnSe), and zinc telluride (ZnTe)]. It is known that it is formed by sputtering using a disk-shaped target made of a sintered body obtained by sintering, and is usually obtained by sintering a mixed powder consisting of silicon dioxide powder and zinc sulfide powder. It is formed by sputtering using a disk-shaped target made of a sintered body having a relative density of 90% or more. The disc-shaped target composed of silicon dioxide and zinc sulfide has a purity of 9
Purity: 9.99% by weight or more of zinc sulfide powder
9.999% by weight or more of silicon dioxide powder in 10 to 30
It is also known that the mixture is uniformly mixed, and the resulting mixed powder is press-formed into a disk shape and then sintered (see JP-A-6-65725).

【0003】これらターゲットをアルゴンなどの不活性
ガス雰囲気に保持されたスパッタリング装置にセット
し、高周波電力をかけると、スパッタリングガスの原子
や分子は電離イオン化し、これがターゲット表面近くの
電界で加速されてターゲット表面に衝突し、ターゲット
組成物がはじき出されて基板に衝突し、ターゲットとほ
ぼ同じ組成の光記録保護膜が形成されることも知られて
いる。
When these targets are set in a sputtering apparatus held in an atmosphere of an inert gas such as argon and high-frequency power is applied, atoms and molecules of the sputtering gas are ionized and accelerated by an electric field near the target surface. It is also known that the target recording material collides with the target surface, repels and collides with the substrate, and an optical recording protective film having substantially the same composition as the target is formed.

【0004】[0004]

【発明が解決しようとする課題】近年、光記録媒体の品
質管理は一層厳しくなり、成膜された光記録保護膜の品
質管理も厳しくチェックされる傾向にある。しかし、従
来の光記録保護膜形成用スパッタリングターゲットを用
いて形成された光記録保護膜の組成はターゲットの組成
と大きくずれることがあり、特に形成された光記録保護
膜に含まれる酸素の組成比率がターゲットの酸素の組成
比率と大きくかけ離れることがある。特に長時間スパッ
タリングを行うほどまたは高出力でかつ長時間スパッタ
リングを行うほど光記録保護膜とターゲットの酸素の含
有比率が大きくかけはなれる傾向にあり、厳しい品質管
理下では不良品となるなどしてターゲットの信頼性を損
なう事態が発生することがあった。
In recent years, the quality control of optical recording media has become more strict, and the quality control of the formed optical recording protection film has also been strictly checked. However, the composition of the optical recording protection film formed using the conventional sputtering target for forming an optical recording protection film may be greatly different from the composition of the target, especially the composition ratio of oxygen contained in the formed optical recording protection film. May greatly deviate from the composition ratio of oxygen in the target. In particular, the longer the sputtering time or the higher the output and the longer the sputtering time, the higher the oxygen content ratio of the optical recording protective film and the target tends to be, and under severe quality control, it may be defective. In some cases, the reliability of the target was impaired.

【0005】[0005]

【課題を解決するための手段】そこで、本発明者らは、
形成された光記録保護膜の酸素の組成比率がターゲット
の酸素の組成比率と大きくかけ離れることの無いターゲ
ットを得るべく研究を行なっていたところ、従来の二酸
化ケイ素:10〜30モル%を含有し、残部がカルコゲ
ン化亜鉛からなる組成を有するターゲットに、さらにS
i:1〜10モル%添加した組成を有するターゲット
は、これを用いてスパッタリングを行っても形成された
光記録保護膜に含まれる酸素の組成比率がターゲットに
含まれる酸素の組成比率と大きくかけ離れることの無
い、という研究結果が得られたのである。
Means for Solving the Problems Accordingly, the present inventors have:
Research has been conducted to obtain a target in which the composition ratio of oxygen in the formed optical recording protection film does not largely deviate from the composition ratio of oxygen in the target. Conventional silicon dioxide: 10 to 30 mol% is contained. , The remainder having a composition consisting of zinc chalcogenide,
i: A target having a composition in which 1 to 10 mol% is added has a composition ratio of oxygen contained in an optical recording protection film formed by sputtering using the composition greatly different from the composition ratio of oxygen contained in the target. The research result that there was no thing was obtained.

【0006】この発明は、かかる研究結果に基づいて成
されたものであって、(1)二酸化ケイ素:10〜30
モル%、Si:1〜10モル%を含有し、残部がカルコ
ゲン化亜鉛からなる組成を有する光記録保護膜形成用ス
パッタリングターゲット、に特徴を有するものである。
The present invention has been made based on the results of such research, and (1) silicon dioxide: 10 to 30.
Mol%, Si: 1 to 10 mol%, and the balance is characterized by a sputtering target for forming an optical recording protective film having a composition of zinc chalcogenide.

【0007】前記カルコゲン化亜鉛は硫化亜鉛であるこ
とが最も好ましい。したがって、この発明は、(2)二
酸化ケイ素:10〜30モル%、Si:1〜10モル%
を含有し、残部が硫化亜鉛からなる組成を有する光記録
保護膜形成用スパッタリングターゲット、に特徴を有す
るものである。
[0007] Most preferably, the zinc chalcogenide is zinc sulfide. Therefore, the present invention relates to (2) silicon dioxide: 10 to 30 mol%, Si: 1 to 10 mol%
And a sputtering target for forming an optical recording protective film having a composition comprising zinc sulfide as the remainder.

【0008】この発明の光記録保護膜形成用スパッタリ
ングターゲットは下記のごとくして製造する。まず、市
販のカルコゲン化亜鉛粉末を用意し、この市販のカルコ
ゲン化亜鉛粉末に含まれるガスを除去する目的で市販の
カルコゲン化亜鉛粉末をAr雰囲気中、温度:650℃
(昇温速度:2.2℃/min)1時間保持の条件の脱
ガス熱処理を施し、この脱ガス熱処理を施したカルコゲ
ン化亜鉛粉末に対し、二酸化ケイ素の原料粉末を10〜
30mol%およびSi粉末を1〜10mol%添加
し、これらを均一に混合し、得られた混合粉末を円盤状
にホットプレスすることにより円盤状ホットプレス体を
製造する。この時のホットプレス条件は、Arガス雰囲
気中、圧力:300〜400kgf/cm2 、温度:8
50〜1100℃(好ましくは、850〜900℃)、
5〜7時間保持の条件で行われ、その後、この保持温度
から冷却速度:1〜3℃/minで常温まで冷却する。
このようにして得られた円盤状ホットプレス体を所定の
寸法に研削してこの発明の光記録保護膜形成用スパッタ
リングターゲットを製造する。
The sputtering target for forming an optical recording protective film according to the present invention is manufactured as follows. First, a commercially available zinc chalcogenide powder is prepared, and the commercially available zinc chalcogenide powder is removed in an Ar atmosphere at a temperature of 650 ° C. for the purpose of removing gas contained in the commercially available zinc chalcogenide powder.
(Temperature-raising rate: 2.2 ° C./min) Degassing heat treatment is performed for 1 hour, and the raw material powder of silicon dioxide is added to the chalcogenide zinc powder that has been subjected to the degassing heat treatment.
30 mol% and Si powder are added in an amount of 1 to 10 mol%, and they are mixed uniformly, and the obtained mixed powder is hot-pressed into a disc to produce a disc-shaped hot pressed body. The hot pressing conditions at this time are as follows: Ar gas atmosphere, pressure: 300 to 400 kgf / cm 2 , temperature: 8
50 to 1100 ° C (preferably 850 to 900 ° C),
This is performed under the condition of holding for 5 to 7 hours, and then cooling is performed from this holding temperature to normal temperature at a cooling rate of 1 to 3 ° C./min.
The disk-shaped hot pressed body thus obtained is ground to a predetermined size to produce the sputtering target for forming an optical recording protective film of the present invention.

【0009】この発明の光記録保護膜形成用スパッタリ
ングターゲットに含まれるSi粉末の量を1〜10モル
%に限定した理由は、Si粉末の量が1モル%未満では
所望の効果が得られず、一方、Si粉末の量が10モル
%を越えて添加すると、硫化亜鉛の量が減ることにな
り、光記録保護膜として十分機能しなくなって基板への
熱衝撃を与えやすくなるとともに基板の寿命を縮めるの
で好ましくないという理由によるものである。この発明
の光記録保護膜形成用スパッタリングターゲットに含ま
れるSi粉末の一層好ましい量は5〜7モル%である。
The reason that the amount of Si powder contained in the sputtering target for forming an optical recording protective film of the present invention is limited to 1 to 10 mol% is that the desired effect cannot be obtained if the amount of Si powder is less than 1 mol%. On the other hand, when the amount of the Si powder exceeds 10 mol%, the amount of zinc sulfide decreases, so that it does not function sufficiently as an optical recording protection film, so that thermal shock is easily applied to the substrate and the life of the substrate is increased. This is because it is not preferable because it shortens. The more preferred amount of the Si powder contained in the sputtering target for forming an optical recording protective film of the present invention is 5 to 7 mol%.

【0010】[0010]

【発明の実施の形態】脱ガスする目的で市販のZnS粉
末、ZnSe粉末およびZnTe粉末をそれぞれAr雰
囲気中で昇温速度:2.2℃/minで加熱し、650
℃で1時間保持の熱処理を施すことにより、ZnS原料
粉末、ZnSe原料粉末およびZnTe原料粉末を作製
した。さらに、市販のSiO2 原料粉末およびSi原料
粉末を用意した。
BEST MODE FOR CARRYING OUT THE INVENTION For the purpose of degassing, commercially available ZnS powder, ZnSe powder and ZnTe powder are heated at a rate of 2.2 ° C./min in an Ar atmosphere, respectively, at 650.
By performing a heat treatment at 1 ° C. for 1 hour, ZnS raw material powder, ZnSe raw material powder and ZnTe raw material powder were produced. Further, commercially available SiO 2 raw material powder and Si raw material powder were prepared.

【0011】実施例1 ZnS原料粉末に対してSiO2 原料粉末およびSi原
料粉末をSiO2 :20モル%、Si:6モル%、残
部:ZnSとなるように配合し、この配合粉末をエタノ
ールと共にポリポットの中に入れ、1時間湿式混合して
スラリーとし、得られた混合粉末のスラリーを乾燥する
ことによりエタノールを蒸発させ、その後、軽く解砕を
行った後、ホットプレスの黒鉛型に充填し、Arガス雰
囲気中において圧力:250kgf/cm2 および温
度:950℃、3時間保持の条件のホットプレスを行っ
た後、冷却速度:2℃/分で冷却することにより円盤状
ホットプレス体を作製し、これら円盤状ホットプレス体
を機械加工して直径:200mm、厚さ:5mmの寸法
を有する本発明光記録媒体保護膜形成用スパッタリング
ターゲット(以下、本発明ターゲットという)1を作製
した。
Example 1 A raw material powder of SiO 2 and a raw material of Si were mixed with a raw material powder of ZnS such that SiO 2 : 20 mol%, Si: 6 mol%, and the balance: ZnS, and the mixed powder was mixed with ethanol. Put into a polypot, wet-mix for 1 hour to form a slurry, evaporate ethanol by drying the obtained slurry of the mixed powder, and then lightly crush, then fill in a graphite mold of hot press After performing hot pressing under the conditions of pressure: 250 kgf / cm 2 and temperature: 950 ° C. for 3 hours in an Ar gas atmosphere, a disc-shaped hot pressed body is produced by cooling at a cooling rate of 2 ° C./min. Then, these disk-shaped hot pressed bodies are machined to form a sputtering film for forming a protective film of the optical recording medium of the present invention having a diameter of 200 mm and a thickness of 5 mm. Getto (hereinafter, referred to as the present invention target) was prepared 1.

【0012】従来例1 さらに、比較のためにZnS原料粉末に対してSiO2
原料粉末をSiO2:20モル%、残部:ZnSとなる
ように配合し、この配合粉末を用いて実施例1と同様に
して従来光記録媒体保護膜形成用スパッタリングターゲ
ット(以下、従来ターゲットという)1を作製した。
Conventional Example 1 Further, for comparison, ZnS raw material powder was mixed with SiO 2
The raw material powder was blended so that SiO 2 : 20 mol% and the balance was ZnS, and a sputtering target for forming a conventional protective film for an optical recording medium (hereinafter referred to as a conventional target) was prepared using this blended powder in the same manner as in Example 1. 1 was produced.

【0013】このようにして得られた本発明ターゲット
1および従来ターゲット1の酸素含有量を測定し、その
結果を表1に示した。これら本発明ターゲット1および
従来ターゲット1をそれぞれモリブデン製の冷却用バッ
キングプレートに純度:99.999重量%のイリジウ
ムろう材にてハンダ付けし、これを高周波マグネトロン
スパッタリング装置にセットし、 ・スパッタガス:Ar、 ・スパッタガス圧力:5×10-3Torr、 ・スパッタ電力:13.56MHzの高周波電力150
0Kw(約8.5W/cm2 )、の条件で30時間スパ
ッタを行い、基板表面に半径:60mmの円形光記録媒
体保護膜を形成した。得られた光記録媒体保護膜の基板
中心から22.5mm、27.5mm、32.5mm、
37.5mm、42.5mm、47.5mm、52.5
mmおよび57.5mm離れた個所における酸素の含有
量を測定し、その結果を表1に示した。さらに表1の酸
素含有量およびターゲットの酸素含有量を縦軸に取り、
図1に示されるグラフを作成してこれら個所における酸
素含有量をターゲットの酸素含有量と比較して示した。
The oxygen contents of the thus obtained target 1 of the present invention and the conventional target 1 were measured, and the results are shown in Table 1. Each of the target 1 of the present invention and the target 1 of the related art was soldered to a cooling backing plate made of molybdenum with an iridium brazing material having a purity of 99.999% by weight, and this was set in a high-frequency magnetron sputtering apparatus. Ar, ・ Sputter gas pressure: 5 × 10 −3 Torr, ・ Sputter power: 13.56 MHz high frequency power 150
Sputtering was performed for 30 hours under the conditions of 0 Kw (about 8.5 W / cm 2 ) to form a circular optical recording medium protective film having a radius of 60 mm on the substrate surface. 22.5 mm, 27.5 mm, 32.5 mm from the center of the substrate of the obtained optical recording medium protective film,
37.5mm, 42.5mm, 47.5mm, 52.5
The oxygen content was measured at mm and 57.5 mm apart, and the results are shown in Table 1. Further, the vertical axis represents the oxygen content of Table 1 and the oxygen content of the target,
The graph shown in FIG. 1 was created and the oxygen content at these locations was compared with the oxygen content of the target.

【0014】[0014]

【表1】 [Table 1]

【0015】表1および図1に示される結果から、本発
明ターゲット1は従来ターゲット1と比べて、得られた
光記録媒体保護膜の酸素含有量がターゲットの酸素含有
量に極めて近く、ターゲットと光記録保護膜との酸素濃
度のずれが極めて少ないことが分かる。
From the results shown in Table 1 and FIG. 1, the oxygen content of the obtained optical recording medium protective film of the target 1 of the present invention is very close to the oxygen content of the target. It can be seen that the deviation of the oxygen concentration from the optical recording protection film is extremely small.

【0016】実施例2 先に熱処理したZnSe原料粉末に対してSiO2 原料
粉末およびSi原料粉末をSiO2 :20モル%、S
i:5モル%、残部:ZnSeとなるように配合し、こ
の配合粉末をエタノールと共にポリポットの中に入れ、
1時間湿式混合してスラリーとし、得られた混合粉末の
スラリーを乾燥することによりエタノールを蒸発させ、
その後、軽く解砕を行った後、ホットプレスの黒鉛型に
充填し、Arガス雰囲気中において実施例1と同じ条件
でり円盤状ホットプレス体を作製し、これら円盤状ホッ
トプレス体を機械加工して直径:200mm、厚さ:5
mmの寸法を有する本発明ターゲット2を作製した。
Example 2 The SiO 2 raw material powder and the Si raw material powder were added to the previously heat-treated ZnSe raw material powder by SiO 2 : 20 mol%, S
i: 5 mol%, balance: ZnSe, and this powder mixture was put into a polypot together with ethanol.
The mixture was wet-mixed for 1 hour to form a slurry, and the obtained mixed powder slurry was dried to evaporate ethanol,
Thereafter, after crushing lightly, the mixture was filled into a graphite mold of a hot press, and a disk-shaped hot pressed body was prepared in an Ar gas atmosphere under the same conditions as in Example 1, and these disk-shaped hot pressed bodies were machined. And diameter: 200mm, thickness: 5
A target 2 of the present invention having a size of mm was produced.

【0017】従来例2 さらに、比較のためにZnSe原料粉末に対してSiO
2 原料粉末を、SiO 2 :20モル%、残部:ZnS
eとなるように配合し、この配合粉末を用いて実施例2
と同様にして従来ターゲット2を作製した。
Conventional Example 2 Further, for comparison, ZnSe raw material powder was compared with SiO
TwoThe raw material powder is SiO Two : 20 mol%, balance: ZnS
e and blended to obtain Example 2.
In the same manner as in the above, a conventional target 2 was produced.

【0018】このようにして得られた本発明ターゲット
2および従来ターゲット2の酸素含有量を測定し、その
結果を表2に示した。これら本発明ターゲット2および
従来ターゲット2をそれぞれモリブデン製の冷却用バッ
キングプレートに純度:99.999重量%のイリジウ
ムろう材にてハンダ付けし、これを高周波マグネトロン
スパッタリング装置にセットし、 ・スパッタガス:Ar、 ・スパッタガス圧力:5×10-3Torr、 ・スパッタ電力:13.56MHzの高周波電力150
0Kw(約8.5W/cm2 )、の条件で30時間スパ
ッタを行い、基板表面に半径:60mmの円形光記録媒
体保護膜を形成した。得られた光記録媒体保護膜の基板
中心から22.5mm、27.5mm、32.5mm、
37.5mm、42.5mm、47.5mm、52.5
mmおよび57.5mm離れた個所における酸素の含有
量を測定し、その結果を表2に示した。
The oxygen contents of the target 2 of the present invention and the conventional target 2 thus obtained were measured, and the results are shown in Table 2. The target 2 of the present invention and the target 2 of the related art were each soldered to a cooling backing plate made of molybdenum with an iridium brazing material having a purity of 99.999% by weight, and this was set in a high-frequency magnetron sputtering apparatus. Ar, ・ Sputter gas pressure: 5 × 10 −3 Torr, ・ Sputter power: 13.56 MHz high frequency power 150
Sputtering was performed for 30 hours under the conditions of 0 Kw (about 8.5 W / cm 2 ) to form a circular optical recording medium protective film having a radius of 60 mm on the substrate surface. 22.5 mm, 27.5 mm, 32.5 mm from the center of the substrate of the obtained optical recording medium protective film,
37.5mm, 42.5mm, 47.5mm, 52.5
The oxygen content was measured at a distance of 5 mm and 57.5 mm, and the results are shown in Table 2.

【0019】[0019]

【表2】 [Table 2]

【0020】表2に示される結果から、本発明ターゲッ
ト2は従来ターゲット2と比べて、得られた光記録媒体
保護膜の酸素含有量がターゲットの酸素含有量に極めて
近く、ターゲットと光記録保護膜との酸素濃度のずれが
極めて少ないことが分かる。
From the results shown in Table 2, the target 2 of the present invention has an oxygen content of the obtained optical recording medium protective film which is very close to the oxygen content of the target as compared with the conventional target 2. It can be seen that the deviation of the oxygen concentration from the film is extremely small.

【0021】実施例3 先に熱処理したZnTe原料粉末に対してSiO2 原料
粉末およびSi原料粉末をSiO2 :20モル%、S
i:7モル%、残部:ZnTeとなるように配合し、こ
の配合粉末をエタノールと共にポリポットの中に入れ、
1時間湿式混合してスラリーとし、得られた混合粉末の
スラリーを乾燥することによりエタノールを蒸発させ、
その後、軽く解砕を行った後、ホットプレスの黒鉛型に
充填し、Arガス雰囲気中において実施例1と同じ条件
で円盤状ホットプレス体を作製し、これら円盤状ホット
プレス体を機械加工して直径:200mm、厚さ:5m
mの寸法を有する本発明ターゲット3を作製した。
Example 3 The SiO 2 raw material powder and the Si raw material powder were added to the previously heat-treated ZnTe raw material powder by SiO 2 : 20 mol%, S
i: 7 mol%, balance: ZnTe, and this powder mixture was put into a polypot together with ethanol.
The mixture was wet-mixed for 1 hour to form a slurry, and the obtained mixed powder slurry was dried to evaporate ethanol,
Thereafter, after crushing lightly, the mixture was filled into a graphite mold of a hot press, disk-shaped hot pressed bodies were produced in an Ar gas atmosphere under the same conditions as in Example 1, and these disk-shaped hot pressed bodies were machined. And diameter: 200mm, thickness: 5m
The target 3 of the present invention having a dimension of m was produced.

【0022】従来例3 さらに、比較のためにZnTe原料粉末に対してSiO
2 原料粉末をSiO2:20モル%、残部:ZnTeと
なるように配合し、この配合粉末を用いて実施例3と同
様にして従来ターゲット3を作製した。
Conventional Example 3 Further, for comparison, ZnTe raw material powder was compared with SiO
(2) The raw material powder was blended so that SiO 2 : 20 mol% and the balance: ZnTe, and a conventional target 3 was produced in the same manner as in Example 3 using this blended powder.

【0023】このようにして得られた本発明ターゲット
3および従来ターゲット3の酸素含有量を測定し、その
結果を表3に示した。これら本発明ターゲット3および
従来ターゲット3をそれぞれモリブデン製の冷却用バッ
キングプレートに純度:99.999重量%のイリジウ
ムろう材にてハンダ付けし、これを高周波マグネトロン
スパッタリング装置にセットし、 ・スパッタガス:Ar、 ・スパッタガス圧力:5×10-3Torr、 ・スパッタ電力:13.56MHzの高周波電力150
0Kw(約8.5W/cm2 )、の条件で30時間スパ
ッタを行い、基板表面に半径:60mmの円形光記録媒
体保護膜を形成した。得られた光記録媒体保護膜の基板
中心から22.5mm、27.5mm、32.5mm、
37.5mm、42.5mm、47.5mm、52.5
mmおよび57.5mm離れた個所における酸素の含有
量を測定し、その結果を表3に示した。
The oxygen contents of the thus obtained target 3 of the present invention and conventional target 3 were measured, and the results are shown in Table 3. The target 3 of the present invention and the target 3 of the related art were each soldered to a cooling backing plate made of molybdenum with an iridium brazing material having a purity of 99.999% by weight, and this was set in a high-frequency magnetron sputtering apparatus. Ar, ・ Sputter gas pressure: 5 × 10 −3 Torr, ・ Sputter power: 13.56 MHz high frequency power 150
Sputtering was performed for 30 hours under the conditions of 0 Kw (about 8.5 W / cm 2 ) to form a circular optical recording medium protective film having a radius of 60 mm on the substrate surface. 22.5 mm, 27.5 mm, 32.5 mm from the center of the substrate of the obtained optical recording medium protective film,
37.5mm, 42.5mm, 47.5mm, 52.5
The oxygen content was measured at a distance of 5 mm and 57.5 mm. The results are shown in Table 3.

【0024】[0024]

【表3】 [Table 3]

【0025】表3に示される結果から、本発明ターゲッ
ト2は従来ターゲット2と比べて、得られた光記録媒体
保護膜の酸素含有量がターゲットの酸素含有量に極めて
近く、ターゲットと光記録保護膜との酸素濃度のずれが
極めて少ないことが分かる。
From the results shown in Table 3, the oxygen content of the obtained optical recording medium protective film of the target 2 of the present invention was very close to the oxygen content of the target as compared with the conventional target 2. It can be seen that the deviation of the oxygen concentration from the film is extremely small.

【0026】[0026]

【発明の効果】上述のように、Si:1〜10モル%添
加した組成を有するこの発明の光記録媒体保護膜形成用
スパッタリングターゲットは、従来の光記録媒体保護膜
形成用スパッタリングターゲットのように形成された光
記録保護膜の酸素の組成比率がターゲットの酸素の組成
比率と大きくかけ離れることが無いところから不良な光
記録媒体保護膜の成膜を極力抑えることができ、歩留ま
りが改善され、光ディスクの生産効率の向上およびコス
ト削減を行うことができ、光メディア産業の発展に大い
に貢献し得るものである。
As described above, the sputtering target for forming an optical recording medium protective film according to the present invention having a composition in which Si is added in an amount of 1 to 10 mol% is the same as the conventional sputtering target for forming an optical recording medium protective film. Since the composition ratio of oxygen in the formed optical recording protection film does not greatly deviate from the composition ratio of oxygen in the target, the formation of a defective optical recording medium protection film can be suppressed as much as possible, and the yield is improved. The optical disk production efficiency can be improved and the cost can be reduced, which can greatly contribute to the development of the optical media industry.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明ターゲット1で形成した光記録媒体保護
膜と従来ターゲット1で形成した光記録媒体保護膜に含
まれる酸素量をターゲットに含まれる酸素量と比較した
グラフである。
FIG. 1 is a graph comparing the amount of oxygen contained in an optical recording medium protective film formed by a target 1 of the present invention and the amount of oxygen contained in an optical recording medium protective film formed by a conventional target 1 with the amount of oxygen contained in a target.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 二酸化ケイ素:10〜30モル%、S
i:1〜10モル%を含有し、残部がカルコゲン化亜鉛
からなる組成を有することを特徴とする光記録保護膜形
成用スパッタリングターゲット。
1. Silicon dioxide: 10 to 30 mol%, S
i: a sputtering target for forming an optical recording protective film, comprising: 1 to 10 mol%, with the balance being zinc chalcogenide.
【請求項2】 前記カルコゲン化亜鉛は硫化亜鉛である
ことを特徴とする請求項1記載の光記録保護膜形成用ス
パッタリングターゲット。
2. The sputtering target according to claim 1, wherein the zinc chalcogenide is zinc sulfide.
JP24272399A 1999-08-30 1999-08-30 Sputtering target for forming optical recording protective film Withdrawn JP2001064768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24272399A JP2001064768A (en) 1999-08-30 1999-08-30 Sputtering target for forming optical recording protective film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24272399A JP2001064768A (en) 1999-08-30 1999-08-30 Sputtering target for forming optical recording protective film

Publications (1)

Publication Number Publication Date
JP2001064768A true JP2001064768A (en) 2001-03-13

Family

ID=17093299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24272399A Withdrawn JP2001064768A (en) 1999-08-30 1999-08-30 Sputtering target for forming optical recording protective film

Country Status (1)

Country Link
JP (1) JP2001064768A (en)

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