JP2001316804A - Sputtering target for formation of optical logging protection film capable of dc sputtering and low in abnormal discharge - Google Patents
Sputtering target for formation of optical logging protection film capable of dc sputtering and low in abnormal dischargeInfo
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- JP2001316804A JP2001316804A JP2000134382A JP2000134382A JP2001316804A JP 2001316804 A JP2001316804 A JP 2001316804A JP 2000134382 A JP2000134382 A JP 2000134382A JP 2000134382 A JP2000134382 A JP 2000134382A JP 2001316804 A JP2001316804 A JP 2001316804A
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- Prior art keywords
- sputtering
- titanium
- sputtering target
- powder
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、レーザーを用い
て情報の記録および消去を行うことのできる相変化型光
ディスクなどの光記録保護膜を形成するための直流スパ
ッタリング可能でかつ異常放電の少ない光記録保護膜形
成用スパッタリングターゲットに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light source capable of performing direct-current sputtering and having less abnormal discharge for forming an optical recording protection film such as a phase-change optical disk capable of recording and erasing information using a laser. The present invention relates to a sputtering target for forming a recording protection film.
【０００２】[0002]
【従来の技術】一般に、光記録保護膜は、通常は、二酸
化ケイ素と硫化亜鉛の混合粉末を焼結して得られた相対
密度が９０％以上の焼結体からなる円盤状ターゲットを
用いてスパッタすることにより形成することは知られて
おり、この二酸化ケイ素と硫化亜鉛からなる円盤状ター
ゲットは、純度：９９．９９９重量％以上の硫化亜鉛粉
末に対し、純度：９９．９９９重量％以上の二酸化ケイ
素粉末を１０〜３０ｍｏｌ％添加し均一に混合し、得ら
れた混合粉末を円盤状に加圧成形したのち焼結すること
により製造することも知られている（特開平６−６５７
２５号公報参照）。2. Description of the Related Art Generally, an optical recording protective film is usually formed by using a disk-shaped target made of a sintered body having a relative density of 90% or more obtained by sintering a mixed powder of silicon dioxide and zinc sulfide. It is known that the target is formed by sputtering. The disc-shaped target composed of silicon dioxide and zinc sulfide has a purity of 99.999% by weight or more and a purity of 99.999% by weight or more based on zinc sulfide powder of 99.999% by weight or more. It is also known that silicon dioxide powder is added in an amount of 10 to 30 mol%, uniformly mixed, and the resulting mixed powder is press-formed into a disk shape and then sintered to produce the powder (Japanese Patent Laid-Open No. 6-657).
No. 25).
【０００３】前記硫化亜鉛および二酸化ケイ素はいずれ
も絶縁体であるため、従来の硫化亜鉛および二酸化ケイ
素からなる光記録保護膜形成用スパッタリングターゲッ
トの比抵抗は１０7Ωｃｍ以上有しており、このように
高抵抗値を有するターゲットを用いて直流スパッタリン
グを行うことは事実上不可能である。そのために、従来
の光記録保護膜形成用スパッタリングターゲットは高周
波スパッタリング装置を用いて光記録保護膜を形成せざ
るをえなかった。Since both zinc sulfide and silicon dioxide are insulators, the conventional sputtering target for forming an optical recording protective film composed of zinc sulfide and silicon dioxide has a specific resistance of 10 7 Ωcm or more. It is practically impossible to perform DC sputtering using a target having a high resistance value. For this reason, the conventional sputtering target for forming an optical recording protective film had to form an optical recording protective film using a high-frequency sputtering device.
【０００４】[0004]
【発明が解決しようとする課題】近年、光記録媒体の値
下げ要求は一層厳しくなり、一層低コストで光記録保護
膜を成膜することが求められている。しかし、従来の光
記録保護膜形成用スパッタリングターゲットを用い高周
波スパッタリングにより光記録保護膜を形成する方法で
はコスト削減に限界がある。その理由として高周波スパ
ッタリング装置は高周波電力を制御するための装置の値
段が高いところから、高周波スパッタリング装置自体が
高価なものとなり、また、高周波電力損失による電力消
費も無視できないほど大きくなって電力効率も低いから
である。そのため、高周波スパッタリング装置に比べて
成膜速度が速く、スパッタリング効率が良く、しかも制
御が容易でさらに価格の安い直流スパッタリング装置を
使用して光記録保護膜を成膜する研究がなされている。
しかし、直流スパッタリング装置を使用して工業的に光
記録保護膜を形成することのできる光記録保護膜形成用
スパッタリングターゲットは未だ得られていない。In recent years, the demand for lowering the price of optical recording media has become more severe, and there has been a demand for forming an optical recording protective film at lower cost. However, there is a limit in cost reduction in the conventional method of forming an optical recording protective film by high frequency sputtering using a sputtering target for forming an optical recording protective film. The reason is that the high-frequency sputtering device itself is expensive because the price of the device for controlling the high-frequency power is high, and the power consumption due to the high-frequency power loss is so large that the power efficiency cannot be ignored. Because it is low. For this reason, studies have been made on forming an optical recording protection film using a DC sputtering device which has a higher film forming rate, higher sputtering efficiency, easier control, and lower cost than a high frequency sputtering device.
However, a sputtering target for forming an optical recording protective film that can industrially form an optical recording protective film using a DC sputtering device has not yet been obtained.
【０００５】[0005]
【課題を解決するための手段】そこで、本発明者らは、
価格の安い直流スパッタリング装置を用いて光記録保護
膜を成形することのできる光記録保護膜形成用スパッタ
リングターゲットを開発すべく研究を行なっていたとこ
ろ、従来の硫化亜鉛−二酸化ケイ素系光記録保護膜形成
用スパッタリングターゲットにおいて、前記二酸化ケイ
素をケイ素とチタンの複合酸化物に置き換え、さらに酸
化インジウムを０．５〜３０モル％添加すると、比抵抗
値が格段に低下し、異常放電の発生が少なくなって直流
スパッタリングを行なうことができる、という研究結果
が得られたのである。Means for Solving the Problems Accordingly, the present inventors have:
We have been conducting research to develop a sputtering target for forming an optical recording protective film that can be formed using a low-cost DC sputtering device. In the sputtering target for formation, when the silicon dioxide is replaced with a composite oxide of silicon and titanium and indium oxide is added in an amount of 0.5 to 30 mol%, the specific resistance value is remarkably reduced, and the occurrence of abnormal discharge is reduced. The research results showed that DC sputtering can be performed by using this method.
【０００６】この発明は、かかる研究結果に基づいて成
されたものであって、（１）ケイ素とチタンの複合酸化
物：１０〜３０モル％、酸化インジウム：０．５〜３０
モル％を含有し、残部が硫化亜鉛からなる組成を有する
直流スパッタリング可能でかつ異常放電の少ない光記録
保護膜形成用スパッタリングターゲット、に特徴を有す
るものである。The present invention has been made on the basis of the above research results. (1) A composite oxide of silicon and titanium: 10 to 30 mol%, indium oxide: 0.5 to 30
The sputtering target for forming an optical recording protective film, which has a composition of mol% and a balance of zinc sulfide, is DC-sputterable and has little abnormal discharge.
【０００７】前記ケイ素とチタンの複合酸化物における
ケイ素とチタンの比（ケイ素／チタン）は９５／５〜２
０／８０の範囲内にあることが好ましい。したがって、
この発明は、（２）ケイ素とチタンの複合酸化物：１０
〜３０モル％、酸化インジウム：０．５〜３０モル％を
含有し、残部が硫化亜鉛からなる組成を有するスパッタ
リングターゲットであって、前記ケイ素とチタンの複合
酸化物は、チタンの含有比｛チタン／（ケイ素＋チタ
ン）｝が０．０５〜０．８の範囲内にあるケイ素とチタ
ンの複合酸化物である直流スパッタリング可能でかつ異
常放電の少ない光記録保護膜形成用スパッタリングター
ゲット、に特徴を有するものである。The silicon / titanium composite oxide has a silicon / titanium ratio (silicon / titanium) of 95/5 to 2
It is preferably in the range of 0/80. Therefore,
The present invention provides (2) a composite oxide of silicon and titanium: 10
A sputtering target containing 0.5 to 30 mol% of indium oxide and 0.5 to 30 mol% of indium oxide, with the balance being zinc sulfide, wherein the composite oxide of silicon and titanium has a titanium content ratio of titanium / (Silicon + titanium)} is a composite oxide of silicon and titanium having a value in the range of 0.05 to 0.8, which is capable of direct-current sputtering and has a small amount of abnormal discharge. Have
【０００８】この発明の直流スパッタリング可能でかつ
異常放電の少ない光記録保護膜形成用スパッタリングタ
ーゲットに含まれる酸化インジウムを０．５〜３０モル
％に限定した理由は、酸化インジウムの量が０．５モル
％未満ではターゲットの抵抗値が所望の値まで下がら
ず、したがって直流スパッタリングを行うことができな
くなるので好ましくなく、一方、酸化インジウムの量が
３０モル％を越えて添加すると、燒結中に酸化インジウ
ムの占める割合が多くなってターゲットの燒結性に悪影
響を及ぼして密度が低くなり、さらにパーティクルが増
えるので好ましくない。したがって、この発明の直流ス
パッタリング可能でかつ異常放電の少ない光記録保護膜
形成用スパッタリングターゲットに含まれる酸化インジ
ウムは０．５〜３０モル％に定めた。酸化インジウムの
好ましい含有量は１０〜１５モル％であり、さらに一層
好ましい範囲は１１〜１３モル％である。The reason why the indium oxide contained in the sputtering target for forming an optical recording protective film capable of direct-current sputtering and having less abnormal discharge according to the present invention is limited to 0.5 to 30 mol% is that the amount of indium oxide is 0.5 to 30 mol%. If the amount of indium oxide is less than 30% by mole, the resistance of the target does not decrease to a desired value and DC sputtering cannot be performed. Increases the sintering ratio, adversely affects the sinterability of the target, lowers the density, and further increases the number of particles, which is not preferable. Therefore, the indium oxide contained in the sputtering target for forming an optical recording protective film capable of direct-current sputtering and having less abnormal discharge according to the present invention is set to 0.5 to 30 mol%. The preferred content of indium oxide is from 10 to 15 mol%, and an even more preferred range is from 11 to 13 mol%.
【０００９】この発明の直流スパッタリング可能でかつ
異常放電の少ない光記録保護膜形成用スパッタリングタ
ーゲットに含まれるケイ素とチタンの複合酸化物におけ
るチタンの含有比｛チタン／（ケイ素＋チタン）｝を
０．０５〜０．８の範囲内に限定した理由は、チタン／
（ケイ素＋チタン）が０．０５未満では複合酸化物の抵
抗が十分下がらず、一方、０．８を越えるとターゲット
の抵抗値低減効果がほとんど改善されないので好ましく
ないことによるものである。チタン／（ケイ素＋チタ
ン）は０．２〜０．７であることが一層好ましい。前記
ケイ素とチタンの複合酸化物は、ＳｉＯ2におけるＳｉ
の一部をＴｉで置換した（Ｓｉ1-x，Ｔｉx）Ｏ2（ただ
し、ｘ＝０．０５〜０．８）組成を有する複合酸化物で
あることが好ましいが、（Ｓｉ1-x，Ｔｉx）Ｏ（ただ
し、ｘ＝０．０５〜０．８）、（Ｓｉ1-x，Ｔｉx）2Ｏ3
（ただし、ｘ＝０．０５〜０．８）など酸素数の異なる
その他の酸化物であっても良い。In the present invention, the content ratio of titanium in the composite oxide of silicon and titanium contained in the sputtering target for forming an optical recording protective film capable of direct-current sputtering and having less abnormal discharge is set to be 0.1 / (silicon + titanium). The reason for limiting the content within the range of 0.5 to 0.8 is that titanium /
If (silicon + titanium) is less than 0.05, the resistance of the composite oxide is not sufficiently reduced, while if it exceeds 0.8, the effect of reducing the resistance of the target is hardly improved, which is not preferable. Titanium / (silicon + titanium) is more preferably 0.2 to 0.7. The composite oxide of silicon and titanium is Si 2 in SiO 2
Some was replaced with Ti (Si 1-x, Ti x) of O 2 (however, x = 0.05 to 0.8) is preferably a complex oxide having a composition, (Si 1-x , Ti x) O (provided that, x = 0.05~0.8), (Si 1-x, Ti x) 2 O 3
(However, other oxides having different oxygen numbers, such as x = 0.05 to 0.8) may be used.
【００１０】この発明の直流スパッタリング可能でかつ
異常放電の少ない光記録保護膜形成用スパッタリングタ
ーゲットは下記のごとくして製造する。まず、市販の硫
化亜鉛粉末を用意し、この市販の硫化亜鉛粉末に含まれ
るガスを除去する目的で市販の硫化亜鉛粉末をＡｒ雰囲
気中、温度：６５０℃（昇温速度：２．２℃／ｍｉｎ）
１時間保持の条件の脱ガス熱処理を施し、この脱ガス熱
処理を施した硫化亜鉛粉末に対し、市販のケイ素とチタ
ンの複合酸化物粉末：１０〜３０モル％および酸化イン
ジウム粉末：０．５〜３０モル％添加し、これらを均一
に混合し、得られた混合粉末を円盤状にホットプレスす
ることにより円盤状ホットプレス体を製造する。この時
のホットプレス条件は、Ａｒガス雰囲気中、圧力：３０
〜４０ＭＰａ 、温度：８５０〜１１００℃、５〜７時
間保持の条件で行われ、その後、この保持温度から冷却
速度：１〜３℃／ｍｉｎで常温まで冷却する。このよう
にして得られた円盤状ホットプレス体を所定の寸法に研
削してこの発明の直流スパッタリング可能でかつ異常放
電の少ない光記録保護膜形成用スパッタリングターゲッ
トを製造する。The sputtering target for forming an optical recording protective film according to the present invention, which is capable of direct-current sputtering and has little abnormal discharge, is manufactured as follows. First, a commercially available zinc sulfide powder is prepared, and for the purpose of removing gas contained in the commercially available zinc sulfide powder, the commercially available zinc sulfide powder is placed in an Ar atmosphere at a temperature of 650 ° C. (heating rate: 2.2 ° C. / min)
Degassing heat treatment under the condition of holding for 1 hour is carried out, and with respect to the zinc sulfide powder subjected to the degassing heat treatment, commercially available composite oxide powder of silicon and titanium: 10 to 30 mol% and indium oxide powder: 0.5 to 30 mol% is added, these are uniformly mixed, and the obtained mixed powder is hot-pressed into a disc to produce a disc-shaped hot pressed body. The hot pressing conditions at this time were as follows: Ar gas atmosphere, pressure: 30
~ 40MPa The temperature is maintained at 850 to 1100 ° C. for 5 to 7 hours. Thereafter, the temperature is cooled from this maintained temperature to room temperature at a cooling rate of 1 to 3 ° C./min. The disk-shaped hot pressed body thus obtained is ground to a predetermined size to produce the sputtering target for forming an optical recording protective film according to the present invention, which is capable of direct-current sputtering and has little abnormal discharge.
【００１１】[0011]
【発明の実施の形態】脱ガスする目的で市販のＺｎＳ粉
末をＡｒ雰囲気中で昇温速度：２．２℃／ｍｉｎで加熱
し、６５０℃で１時間保持の熱処理を施したのち粉砕す
ることにより、いずれも平均粒径：３μｍのＺｎＳ粉末
を作製した。さらに、市販の平均粒径：５μｍを有し表
１に示されるＴｉの置換比率の異なった（Ｓｉ1-x，Ｔ
ｉx）Ｏ 2（ただし、ｘ＝０．０５〜０．８）複合酸化物
粉末、および平均粒径：１．５μｍを有するＩｎ2Ｏ3粉
末を用意した。DESCRIPTION OF THE PREFERRED EMBODIMENTS Commercially available ZnS powder for the purpose of degassing
The powder is heated in an Ar atmosphere at a heating rate of 2.2 ° C./min.
And heat-treated at 650 ° C for 1 hour, and then pulverized.
In this case, the average particle size of the ZnS powder is 3 μm.
Was prepared. Further, a commercially available average particle diameter: 5 μm
1 having different substitution ratios of Ti (Si1-x, T
ix) O Two(However, x = 0.05-0.8) Composite oxide
Powder and In with an average particle size: 1.5 μmTwoOThreepowder
I prepared the end.
【００１２】前記用意したＺｎＳ粉末、（Ｓｉ1-x，Ｔ
ｉx）Ｏ2（ただし、ｘ＝０．０５〜０．８）複合酸化物
粉末、およびＩｎ2Ｏ3粉末を表１に示される割合で配合
し、この配合粉末をエタノールと共にポリポットの中に
入れ、１時間湿式混合して混合粉末のスラリーとし、得
られた混合粉末のスラリーを乾燥することによりエタノ
ールを蒸発させ、その後、軽く解砕を行った後、ホット
プレスの黒鉛型に充填し、Ａｒガス雰囲気中において圧
力：３４ＭＰａ 、温度：１０００℃、５時間保持の条
件のホットプレスを行った後、冷却速度：３℃／分で冷
却することにより表１に示される組成の円盤状ホットプ
レス体を作製し、これら円盤状ホットプレス体を機械加
工して直径：２００ｍｍ、厚さ：５ｍｍの寸法を有する
本発明光記録媒体保護膜形成用スパッタリングターゲッ
ト（以下、本発明ターゲットという）１〜１３を作製し
た。The prepared ZnS powder, (Si 1-x , T
i x) O 2 (however, x = 0.05 to 0.8) composite oxide powder, and the In 2 O 3 powder were mixed in the proportions shown in Table 1, in a polyethylene pot This blend powder with ethanol The mixture was wet-mixed for 1 hour to form a mixed powder slurry, and the obtained mixed powder slurry was dried to evaporate the ethanol. Thereafter, the mixture was lightly crushed, and then filled in a graphite mold of a hot press. Pressure in an Ar gas atmosphere: 34 MPa After hot-pressing at a temperature of 1000 ° C. for 5 hours, cooling was performed at a cooling rate of 3 ° C./min to produce disc-shaped hot-pressed bodies having the composition shown in Table 1, and these disc-shaped hot-pressed bodies were formed. The hot pressed body was machined to produce sputtering targets (hereinafter, referred to as the present invention targets) 1 to 13 of the present invention for forming an optical recording medium protective film having a diameter of 200 mm and a thickness of 5 mm.
【００１３】従来例１ さらに、比較のためにＺｎＳ粉末およびＳｉＯ2 粉末を
配合し、この配合粉末を用い、実施例１と同様にしてＳ
ｉＯ2：２０モル％、残部：ＺｎＳからなる組成の従来
光記録媒体保護膜形成用スパッタリングターゲット（以
下、従来ターゲットという）を作製した。Conventional Example 1 Further, for comparison, ZnS powder and SiO 2 powder were blended, and this blended powder was used.
A sputtering target for forming a conventional optical recording medium protective film (hereinafter, referred to as a conventional target) having a composition of iO 2 : 20 mol% and the balance being ZnS was prepared.
【００１４】このようにして得られた本発明ターゲット
１〜１３および従来ターゲットの比抵抗値を四端針法に
より測定し、その結果を表２に示した。これら本発明タ
ーゲット１〜１３および従来ターゲットをそれぞれモリ
ブデン製の冷却用バッキングプレートに純度：９９．９
９９重量％のインジウムろう材にてハンダ付けし、これ
を直流マグネトロンスパッタリング装置にセットし、 ・スパッタガス：Ａｒ、 ・ ・スパッタガス圧力：５×１０-3Ｔｏｒｒ、 ・ ・スパッタ電力：１５００Ｋｗ（約８．５Ｗ／ｃｍ
2 ）、 ・ ・スパッタ時間：１０分、 の条件で直流スパッタリングを行い、陰極と強い放電発
光をもつ負グロー層の間に陰極暗部（クルックス暗部）
が形成されているか否かを観察し、クルックス暗部が観
察できた場合を直流スパッタが可能であるとして○で示
し、クルックス暗部が形成されない場合を直流スパッタ
が不可能であると判断して×で示した。さらに直流マグ
ネトロンスパッタリング中に発生した異常放電回数を測
定し、その結果を表２に示した。The resistivity values of the targets 1 to 13 of the present invention and the conventional targets thus obtained were measured by a four-point probe method, and the results are shown in Table 2. Each of the targets 1 to 13 of the present invention and the conventional target was put on a molybdenum cooling backing plate with a purity of 99.9.
Solder with 99% by weight of indium brazing material and set it in a DC magnetron sputtering apparatus. ・ Sputter gas: Ar, ・ Sputter gas pressure: 5 × 10 −3 Torr, ・ Sputter power: 1500 Kw (approx. 8.5W / cm
2 ), · · Sputtering time: 10 minutes, DC sputtering is performed, and a cathode dark area (Crooks dark area) between the cathode and the negative glow layer having strong discharge emission.
It is observed whether or not the formed Crooks dark portion is observed, and it is indicated by ○ as DC sputtering is possible, and when the Croux dark portion is not formed, it is judged that DC sputtering is not possible, and the result is indicated by ×. Indicated. Further, the number of abnormal discharges generated during DC magnetron sputtering was measured, and the results are shown in Table 2.
【００１５】[0015]
【表１】 [Table 1]
【００１６】[0016]
【表２】 [Table 2]
【００１７】表１〜２に示される結果から、本発明ター
ゲット１〜１３は従来ターゲットと比べて比抵抗値が格
段に小さく、また本発明ターゲット１〜１３は直流スパ
ッタに際していずれもクルックス暗部が形成されてお
り、さらに異常放電回数が少ないところから直流スパッ
タが可能であることが分かる。From the results shown in Tables 1 and 2, the targets 1 to 13 of the present invention have remarkably small specific resistance values as compared with the conventional targets. It can be seen that DC sputtering is possible because the number of abnormal discharges is small.
【００１８】[0018]
【発明の効果】上述のように、この発明の光記録媒体保
護膜形成用スパッタリングターゲットは直流スパッタが
可能であり、従来よりも一層効率良く安価に光記録保護
膜形成することができ、光記録媒体の製造コストを一段
と削減できて光メディア産業の発展に大いに貢献し得る
ものである。As described above, the sputtering target for forming an optical recording medium protective film of the present invention can perform DC sputtering, and can form an optical recording protective film more efficiently and inexpensively than in the prior art. It can greatly reduce the production cost of media and greatly contribute to the development of the optical media industry.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 森 暁 兵庫県三田市テクノパ−ク12−６ 三菱マ テリアル株式会社三田工場内 Ｆターム(参考） 4G030 AA16 AA34 AA37 AA56 BA01 4K029 BA45 BA46 BA48 BA50 BA51 BD12 CA05 DC05 DC09 5D121 AA04 EE03 EE11 EE14 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Akira Mori 12-6 Technopark, Mita-shi, Hyogo F-term in Mitsubishi Materials Corporation Mita Plant (reference) 4G030 AA16 AA34 AA37 AA56 BA01 4K029 BA45 BA46 BA48 BA50 BA51 BD12 CA05 DC05 DC09 5D121 AA04 EE03 EE11 EE14
Claims (3)
モル％、酸化インジウム：０．５〜３０モル％を含有
し、残部が硫化亜鉛からなる組成を有することを特徴と
する直流スパッタリング可能でかつ異常放電の少ない光
記録保護膜形成用スパッタリングターゲット。1. A composite oxide of silicon and titanium: 10 to 30.
1. A sputtering target for forming an optical recording protective film, which is DC-sputterable and has little abnormal discharge, characterized in that it contains 0.5% to 30% by mole of indium oxide and the balance is zinc sulfide.
ンの含有比｛チタン／（ケイ素＋チタン）｝が０．０５
〜０．８の範囲内にあるケイ素とチタンの複合酸化物で
あることを特徴とする請求項１記載の直流スパッタリン
グ可能でかつ異常放電の少ない光記録保護膜形成用スパ
ッタリングターゲット。2. The composite oxide of silicon and titanium has a titanium content ratio {titanium / (silicon + titanium)} of 0.05.
2. The sputtering target for forming an optical recording protective film according to claim 1, wherein the sputtering target is a composite oxide of silicon and titanium within a range of 0.8 to 0.8.
３０モル％、酸化インジウム粉末：０．５〜３０モル％
を含有し、残部が硫化亜鉛粉末からなる組成となるよう
に配合し混合して混合粉末を作製し、この混合粉末を加
圧成形したのち燒結することを特徴とする直流スパッタ
リング可能でかつ異常放電の少ない光記録保護膜形成用
スパッタリングターゲットの製造方法。3. A composite oxide powder of silicon and titanium:
30 mol%, indium oxide powder: 0.5 to 30 mol%
Is mixed and mixed so as to have a composition consisting of zinc sulfide powder with the balance being a zinc sulfide powder, and a mixed powder is produced. Method for producing a sputtering target for forming an optical recording protective film with less occurrence.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000134382A JP2001316804A (en) | 2000-05-08 | 2000-05-08 | Sputtering target for formation of optical logging protection film capable of dc sputtering and low in abnormal discharge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000134382A JP2001316804A (en) | 2000-05-08 | 2000-05-08 | Sputtering target for formation of optical logging protection film capable of dc sputtering and low in abnormal discharge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001316804A true JP2001316804A (en) | 2001-11-16 |
Family
ID=18642669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000134382A Withdrawn JP2001316804A (en) | 2000-05-08 | 2000-05-08 | Sputtering target for formation of optical logging protection film capable of dc sputtering and low in abnormal discharge |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001316804A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003069612A1 (en) * | 2002-02-14 | 2003-08-21 | Nikko Materials Company, Limited | Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target, and method for manufacturing the sputtering target |
| WO2004079037A1 (en) * | 2003-03-04 | 2004-09-16 | Nikko Materials Co., Ltd. | Sputtering target and process for producing the same, thin film for optical information recording medium and process for producing the same |
| JP2008159242A (en) * | 2007-11-30 | 2008-07-10 | Nikko Kinzoku Kk | Optical recording medium with phase-change type optical disk protective film composed essentially of zinc sulfide formed by using sputtering target composed essentially of zinc sulfide |
| US9945983B2 (en) | 2005-11-14 | 2018-04-17 | Guardian Glass, LLC | Silicon titanium oxide coating, coated article including silicon titanium oxide coating, and method of making the same |
-
2000
- 2000-05-08 JP JP2000134382A patent/JP2001316804A/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003069612A1 (en) * | 2002-02-14 | 2003-08-21 | Nikko Materials Company, Limited | Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target, and method for manufacturing the sputtering target |
| CN1296924C (en) * | 2002-02-14 | 2007-01-24 | 日矿金属株式会社 | Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using |
| US7279211B2 (en) | 2002-02-14 | 2007-10-09 | Nippon Mining & Metals Co., Ltd. | Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target, and method for manufacturing the sputtering target |
| WO2004079037A1 (en) * | 2003-03-04 | 2004-09-16 | Nikko Materials Co., Ltd. | Sputtering target and process for producing the same, thin film for optical information recording medium and process for producing the same |
| US9945983B2 (en) | 2005-11-14 | 2018-04-17 | Guardian Glass, LLC | Silicon titanium oxide coating, coated article including silicon titanium oxide coating, and method of making the same |
| JP2008159242A (en) * | 2007-11-30 | 2008-07-10 | Nikko Kinzoku Kk | Optical recording medium with phase-change type optical disk protective film composed essentially of zinc sulfide formed by using sputtering target composed essentially of zinc sulfide |
| JP4642833B2 (en) * | 2007-11-30 | 2011-03-02 | Ｊｘ日鉱日石金属株式会社 | Optical recording medium having a phase change optical disc protective film mainly composed of zinc sulfide formed using a sputtering target composed mainly of zinc sulfide |
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