JP2001057419A - Solid-state image sensor and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To loosen the processing accuracy of a vertical transfer path and a horizontal transfer path. SOLUTION: This solid-state image sensor includes a plurality of first pixel groups P1a aligned and arranged on a two-dimensional plane 1 in the vertical direction; a plurality of second pixel groups P2a aligned and arranged in the vertical direction as staggered by a half pixel in the horizontal direction and the vertical direction against the first pixel columns P1a; a plurality of vertical charge transfer paths 5(5a, 5b) consisting of a transfer path each in a set of the two pixel columns that are adjacent in the first pixel column P1a and the second pixel column P2a aligned in the vertical direction, and meander in between and extend to the vertical direction between them; and a horizontal charge transfer path 7 that is installed at the lower end of the plurality of vertical charge transfer paths 5, receives a charge transferred from the vertical transfer paths 5, and transfers it to the horizontal direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a solid-state imaging device, and more particularly, to a pixel-shifted solid-state imaging device in which adjacent pixels are arranged with a half pitch shift in the vertical and horizontal directions, and a control method thereof.

[0002]

2. Description of the Related Art In a solid-state imaging device, for example, a CCD solid-state imaging device for capturing a still image, it is desired to increase the density of pixels.

FIG. 10 shows a general interline type CC.
It is a top view of D solid-state image sensor.

[0004] The solid-state imaging device is formed on a semiconductor substrate 101 made of, for example, silicon.

The pixel 103, the vertical charge transfer path 105, the horizontal charge transfer path 107, and the output amplifier 111
1 and constitute one CCD solid-state imaging device X as a whole. A plurality of pixels 103 are arranged on the semiconductor substrate 101 in the vertical and horizontal directions.

[0006] The pixel 103 includes a photodiode (photoelectric conversion element) 103a and a readout gate (transfer gate) 103b. The photodiode 103a
The received light is converted into electric charges and stored. The transfer gate 103b reads out the charge stored in the photodiode 103a to the vertical charge transfer path 105.

Each of pixel rows P11, P11, P11 in which a plurality of pixels 103, 103, 103 are arranged in a vertical direction is arranged.
11, one vertical charge transfer path 105 is arranged corresponding to one pixel column P11. Vertical charge transfer path 1
Reference numeral 05 denotes, for example, an n-type conductive layer formed on the semiconductor substrate 101. At the lower end of the vertical charge transfer path 105, a horizontal charge transfer path 107 is provided.

[0008] The horizontal charge transfer path 107 is connected to the semiconductor substrate 10.
The main components are an n-type conductive layer 108 in one and a horizontal charge transfer electrode 121 made of two layers of polysilicon (1 poly, 2 poly) formed on the semiconductor substrate 1.

In the n-type conductive layer 108, high concentration regions 108a having a high n-type impurity concentration and low concentration regions 108b having a low n-type impurity concentration are provided alternately. High concentration area 10
8a forms a potential well with low potential energy. The low-concentration region 108b forms a potential barrier having high potential energy. Potential barriers and potential wells are alternately arranged in the horizontal direction. One potential barrier and one potential well constitute one set, and a structure in which the set is continuously repeated twice forms one transfer unit (hereinafter, referred to as "one packet") of charges. Many packets are formed in the horizontal direction.

On the high concentration region 108a (potential well), a first-layer polysilicon electrode (horizontal transfer electrode 1) is formed.
..) Are formed on the high-concentration region 108b (potential barrier) by a second-layer polysilicon electrode (horizontal transfer electrodes 121-0, 121-).
2, 121-4, 121-6,...) Are formed.

The horizontal charge transfer electrode 121-0 is connected to the horizontal charge transfer electrode 121-1 and a voltage waveform φ1 is applied. Horizontal transfer electrode 121-2 and horizontal transfer electrode 12
1-3 are connected to apply a voltage waveform φ2. Similarly, the horizontal transfer electrode 121-4 and the horizontal transfer electrode 121-5
Are connected to apply a voltage φ1.

As shown in FIG. 14, the vertical charge transfer path 10
5, two vertical charge transfer electrodes 115, for example, a vertical charge transfer electrode 115-1 and a vertical charge transfer electrode 115-2 are provided in a gap between pixels arranged in the row direction.

The vertical charge transfer electrodes 115-1 and 115-
Voltage waveforms from V1 to V4 are applied to 2, 115-3 and 115-4. The vertical transfer electrodes 115-5 to 115-8, the vertical transfer electrodes 115-9 to 15-
Similarly, voltage waveforms from V1 to V4 are applied to 112. The voltage waveforms V1 to V4 are, for example, 0 when forming a potential barrier in a vertical charge transfer path.
V, 8 when forming a charge transfer potential well
V, which is set to 15 V when charges are read from the pixel.

The vertical charge transfer path 105 is electrically connected to a region of the horizontal charge transfer path 107 where potential wells are formed at a rate of one for each packet.

The operation of the solid-state imaging device will be described below with reference to FIGS.

When V1 is set to 15V, the charges accumulated in the photodiodes 103a of all the pixels connected to V1 are read out to the vertical charge transfer path 105 via the transfer gate 103b.

A relatively low positive voltage, for example, 8V, is applied to the vertical transfer electrode 115-1, and the vertical transfer electrode 115-1 is applied.
-2 is also applied to the vertical transfer electrode 115-3.
Also, a voltage of 8 V is applied. The voltage of the vertical transfer electrode 115-1 is returned to 0 V, and a voltage of 8 V is applied to the vertical transfer electrode 115-4. By repeating this operation, charges are transferred in the direction of the horizontal charge transfer path in the vertical charge transfer path 105 by the four-phase driving method.

V1, V2 and V3 are positive relatively low voltages,
For example, assuming that 8 V is set and V4 is set to 0 V, the read charges are distributed under three vertical charge transfer electrodes to which V1, V2, and V3 are applied.

When V1 is returned to 0V, the charges are trapped under the electrodes of V2 and V3. When V4 is set to 8V, the charge spreads below the electrodes of V2, V3 and V4. By repeating this operation, charges are transferred in the vertical charge transfer path 5 toward the horizontal charge transfer path by the four-phase driving method.

The horizontal charge transfer electrode φ1 is set to, for example, 0V,
Assuming that φ2 is 8 V, for example, the electric charge under the φ1 electrode is transferred to the right under the φ2 electrode. At this time, a potential barrier is formed in the left region below the φ1 electrode to prevent backflow of charges.

Accordingly, charges can be transferred in the horizontal charge transfer path 107 by two-phase driving without causing pixel mixing.

As described above, the electrons are transferred in the horizontal charge transfer path 107 in the amplifier direction by the two-layer driving method of φ1 and φ2.

With the above operation, the electric charges from the pixels in the row are read.

Next, charges from pixels in other rows are read out in the same manner. After reading out all the charges, a readout pulse is applied to V2 to read out the charges of the pixels connected to V2. Similarly, the charges of the pixels connected to V3 and V4 are sequentially read.

The charges transferred into the horizontal charge transfer path 107 are transferred to the output amplifier 111 by, for example, a two-phase driving method. The signal is amplified by the output amplifier 111 and extracted as image information to the outside.

By arranging the photodiodes 103a two-dimensionally, a two-dimensional image signal can be obtained.

[0027]

With the demand for higher pixel density, the pixel size itself must be reduced.

However, in the solid-state imaging device X, one vertical charge transfer path 10 is provided for one pixel row P11.
5 are formed. During the transfer of the charges transferred from one vertical charge transfer path 105 to the horizontal charge transfer path 107 to the horizontal charge transfer path 107 connected to two horizontally adjacent vertical charge transfer paths 105, One horizontal transfer electrode 108a, 108b, 108a, 108b is required.

When the pixel 103 is miniaturized, for example, to a size of about 2 to 3 μm square, it becomes difficult to finely process the horizontal charge transfer electrode 121. In addition, with the miniaturization of the pixel 103, the area of the photoelectric conversion element 103a, for example, a photodiode is reduced and the accumulated signal charge is reduced, so that the dynamic range cannot be increased.

In addition, as the total number of pixels of the solid-state imaging device increases, the time required for reading out one frame of image signal increases.

[0031] For a typical digital camera, the frame rate of the image signal, NTSC (N ational T
elevision S ystem C ommite
e) In the case of the method, it is 1/30 second.

When reproducing a still image photographed using a digital camera, there is no particular problem even if the time required for reading an image signal increases.

In the case of a display device for a monitor provided in a digital camera, it is necessary to display a moving image in real time. When displaying a moving image, it becomes impossible to follow the frame rate with an increase in the number of pixels. If the number of pixels exceeds one million, it is difficult to read out image signals from all pixels within 1/30 second. Clear images cannot be obtained.

An object of the present invention is to provide a solid-state imaging device capable of increasing the pixel density while reducing the fine precision of the horizontal transfer electrode.

In addition, another object of the present invention is to provide a solid-state image pickup device capable of clearly displaying a moving image for a monitor even when the number of pixels is large, and a control method therefor.

[0036]

According to one aspect of the present invention, there are provided a plurality of pixel groups arranged on a two-dimensional plane,
Each pixel group includes a first pixel column including a plurality of pixels arranged in a vertical direction at a first pixel pitch, and 1 / (1/1) of the first pixel pitch in the vertical direction with respect to the first pixel column. A second pixel column including a plurality of pixels arranged in a two-pixel shift, wherein the second pixel column has a second pixel pitch between the first pixel columns of adjacent pixel groups in the horizontal direction. A plurality of pixel groups arranged at half the position of the pixel group, a first separation region formed between a pair of pixel groups adjacent in the horizontal direction, the first pixel column of each pixel group, One vertical charge transfer path extending in the vertical direction while meandering between the second pixel columns, and pixels included in one pixel row included in the first pixel columns and aligned in the row direction; A shape between the one pixel row included in the second pixel column and the pixels included in two pixel rows that are vertically adjacent and aligned in the row direction. A voltage is independently applied to each vertical charge transfer electrode to a set of a plurality of vertical charge transfer electrodes extending in the horizontal direction and every eight vertical charge transfer electrodes vertically adjacent among the vertical charge transfer electrodes. A horizontal charge transfer path provided at the lower ends of the plurality of vertical charge transfer paths, receiving the charges transferred from the vertical charge transfer paths, and transferring the received charges in the horizontal direction. A solid-state imaging device is provided which includes an output amplifier formed at one end and amplifying the charge from the horizontal charge transfer path and reading it out.

According to another aspect of the present invention, there are provided a plurality of pixel groups arranged on a two-dimensional plane, wherein each of the plurality of pixel groups is arranged in a vertical direction at a first pixel pitch. And a second pixel column including a plurality of pixels aligned and displaced by a half pixel of the first pixel pitch in a direction perpendicular to the first pixel column. , The second pixel column is horizontally adjacent to a plurality of pixel groups arranged at a half of the second pixel pitch between the first pixel columns of the adjacent pixel groups in the horizontal direction. A first separation region formed between a pair of pixel groups, and one vertical charge extending vertically while meandering between the first pixel column and the second pixel column of each pixel group. A transfer path, pixels included in one pixel row included in the first pixel column and aligned in a row direction, and pixels included in the second pixel column. Rarely, a plurality of vertical charge transfer electrodes formed between the one pixel row and pixels included in two pixel rows adjacent to each other in the vertical direction and aligned in the row direction and extending in the horizontal direction. A drive circuit that independently applies a voltage to each of the vertical charge transfer electrodes with respect to a set of eight vertical charge transfer electrodes adjacent to each other in the vertical direction; A horizontal charge transfer path for receiving charges transferred from the charge transfer path and transferring the charges in a horizontal direction; and an output formed at one end of the horizontal charge transfer path for amplifying charges from the horizontal charge transfer path and reading out the charges to the outside And a pixel included in the first pixel column is a green pixel including a photoelectric conversion element and a green filter. A pixel included in the second pixel column includes a photoelectric conversion element and a red filter. Including red pixel and photoelectric conversion And a blue pixel including a pixel and a blue filter are alternately arranged in the vertical direction, and a red pixel and a blue pixel included in the plurality of second pixel columns are alternately arranged in the horizontal direction. In the readout method, a) a readout voltage for reading out only charges corresponding to the same color is applied to the same vertical charge transfer path for the first to eighth vertical charge transfer electrodes, and the readout voltage is applied to the vertical charge transfer path. Reading the charge, b) transferring the charge read to the vertical charge transfer path toward the horizontal charge transfer path, and c) transferring the charge transferred to the horizontal charge transfer path to the output amplifier. The steps a) to d) are sequentially repeated for the pixels in different rows, and d) the step of amplifying the charges from the horizontal charge transfer path by the output amplifier and outputting the same to the outside. From pixel And a step of reading out all the charges of the solid-state imaging device.

According to another aspect of the present invention, there are provided a plurality of pixel groups arranged on a two-dimensional plane, wherein each of the plurality of pixel groups is arranged in a vertical direction at a first pixel pitch. And a second pixel column including a plurality of pixels aligned and displaced by a half pixel of the first pixel pitch in a direction perpendicular to the first pixel column. , The second pixel column is horizontally adjacent to a plurality of pixel groups arranged at a half of the second pixel pitch between the first pixel columns of the adjacent pixel groups in the horizontal direction. A first separation region formed between a pair of pixel groups, and one vertical charge extending vertically while meandering between the first pixel column and the second pixel column of each pixel group. A transfer path, pixels included in one pixel row included in the first pixel column and aligned in a row direction, and pixels included in the second pixel column. Rarely, a plurality of vertical charge transfer electrodes formed between the one pixel row and pixels included in two pixel rows adjacent to each other in the vertical direction and aligned in the row direction and extending in the horizontal direction. A drive circuit that independently applies a voltage to each of the vertical charge transfer electrodes with respect to a set of eight vertical charge transfer electrodes adjacent in the vertical direction; A horizontal charge transfer path for receiving charges transferred from the charge transfer path and transferring the charges in a horizontal direction; and an output formed at one end of the horizontal charge transfer path for amplifying charges from the horizontal charge transfer path and reading out the charges to the outside And a pixel included in the first pixel column is a green pixel including a photoelectric conversion element and a green filter. A pixel included in the second pixel column includes a photoelectric conversion element and a red filter. Including red pixel and photoelectric conversion And a blue pixel including a pixel and a blue filter are alternately arranged in the vertical direction, and a red pixel and a blue pixel included in the plurality of second pixel columns are alternately arranged in the horizontal direction. A thinning readout method, comprising: a) applying a readout voltage to two vertically adjacent vertical charge transfer electrodes among the first to eighth vertical charge transfer electrodes; and b) the vertical charge transfer path. And c) transferring charges from the vertical charge transfer path toward the horizontal charge transfer path; and d) transferring the charges transferred to the horizontal charge transfer path to the horizontal charge transfer path. A method for controlling a solid-state imaging device, comprising the steps of: transferring to an output amplifier; and e) amplifying the charge from the horizontal charge transfer path by the output amplifier and outputting the same to the outside.

[0039]

Embodiments of the present invention will be described below.

FIG. 1 is a plan view of a solid-state imaging device according to one embodiment of the present invention.

The solid-state image pickup device A includes a pixel portion B in which a plurality of pixels 3 are arranged on a semiconductor substrate 1 and a vertical charge transfer path disposed in the pixel portion B for transferring charges from the pixels 3 in a vertical direction. 5, a horizontal charge transfer path 7 disposed below the pixel section B and horizontally transferring the charge transferred from the vertical charge transfer path 5, and an output amplifier for amplifying the charge transferred from the horizontal charge transfer path 7 Unit 17.

In the pixel section B, a plurality of pixels 3 are arranged in a horizontal direction (row direction) and a vertical direction (column direction) on a two-dimensional plane of the semiconductor substrate 1. One pixel and a pixel adjacent to the pixel are vertically displaced from each other by a half pitch. This is a so-called pixel-shifted solid-state imaging device.

Each pixel has a substantially square shape. The pixels are arranged such that the diagonal lines of the square are aligned in the vertical and horizontal directions.

Pixels arranged in the vertical direction are referred to as pixel columns.

A plurality of green pixels 3a, 3a, 3a are vertically aligned to form a first pixel column P1a.
A plurality of pixels horizontally adjacent to the first pixel row P1a and aligned in the vertical direction form a second pixel row P2a. Pixels forming the second pixel column P2a are blue pixels 3b.
And the red pixels 3c are alternately arranged in the vertical direction.

The first pixel row P1a and the second pixel row P2a horizontally adjacent to the first pixel row P1a form a set of pixel groups PG1.
Is formed. A plurality of pixel groups PG1, PG2, PG3
.. are arranged adjacent to each other in the horizontal direction and the pixel portion B as a whole is
To form

FIG. 1 shows two pixel groups PG for simplicity.
Although only 1 and PG2 are shown, a large number of pixel groups are actually formed.

For example, the first pixel group PG1 included in the first pixel group PG1
A vertical charge transfer path 5 made of an n-type semiconductor layer in the semiconductor substrate 1 along a gap formed between the pixel column P1a and the second pixel column P2a (shown by a thick solid line in FIG. 1). Are provided in a meandering or zigzag shape. No vertical charge transfer path 5 is formed between the pixel groups PG. That is, no vertical charge transfer path is formed between the horizontally adjacent pixel groups PG1 and PG2.

Pixels arranged in the horizontal direction are referred to as pixel rows.

In FIG. 1, the lower side of the first pixel row Q1 including the green pixels 3a and 3a is arranged along two oblique sides.
Vertical charge transfer electrode, for example, vertical charge transfer electrode 11-1
(Indicated by dotted lines) extend in the meandering or zigzag shape in the horizontal direction.

The blue pixels 3b and the red pixels 3c arranged in the horizontal direction are arranged along the two oblique sides below the second pixel row Q2 alternately arranged in the horizontal direction. Vertical charge transfer electrode 11-2 (shown by a thin solid line)
Extend horizontally in a meandering or zigzag shape.

Eight vertical charge transfer electrodes 11-1 to 11-8 form a set of electrode groups EG. Although only one electrode group is shown in FIG. 1, a large number of electrode groups EG, EG, EG are actually formed in the pixel portion B.

The eight vertical charge transfer electrodes 11-1 to 11
By using a driving circuit, independent voltage waveforms from V8 to V1 can be applied to −8.

Between the vertical charge transfer electrodes 11-8 at the last stage of the vertical charge transfer electrodes 11 on the side of the horizontal charge transfer path 7 and the horizontal charge transfer path 7, two horizontally extending two vertically adjacent electrodes are provided. Transfer electrodes Va and Vb are formed. Charge is transferred from the vertical charge transfer path 5 to the horizontal charge transfer path 7 by the two transfer electrodes Va and Vb.

The transfer electrodes Va and Vb are arbitrarily provided. The number of transfer electrodes is not limited to two.

At one end of the vertical charge transfer path 5, a horizontal charge transfer path 7 is formed. A plurality of horizontal charge transfer electrodes 1 in which 1 poly and 2 poly are alternately arranged on a horizontal charge transfer path 7
5 are formed. The horizontal charge transfer electrode 15-0 and the horizontal charge transfer electrode 15-1 are connected in common, and the voltage φ1
Is applied. The horizontal charge transfer electrode 15-2 and the horizontal charge transfer electrode 15-3 are commonly connected, and a voltage φ2 is applied. The horizontal charge transfer electrode 15-4 and the horizontal charge transfer electrode 15-5 are commonly connected, and a voltage φ1 is applied.

Four horizontal charge transfer electrodes 15 (for example, reference numerals 15-1, 15-2, 15-3, and 15 in FIG. 1) are provided between two horizontally adjacent vertical charge transfer paths 5. -4
) Are lined up.

In the pixel row P1a, pixels of B (blue) and R (red) BRBR are vertically arranged from the top. Pixel row P2a
Indicates that pixels of G (green) GGGG are arranged in the vertical direction.

The pixel row P1b is composed of RBRBRB.
Pixels having a color arrangement are arranged in the vertical direction. Pixel row P2
In b, pixels having a color arrangement of GGGGG... are arranged in the vertical direction.

The color arrangement illustrated in FIG. 1 is a color arrangement called a G stripe RB complete checkerboard type.

In the configuration shown, each pixel has a substantially rhombic shape with four oblique sides.

The pixels of the second pixel row P2 are the first pixel row P
.. Can be seen as being arranged in a gap of a matrix formed by one pixel 3c, 3b, 3c,.

On the other hand, if the drawing is inclined at 45 degrees, it is considered that the pixels of the first and second pixel columns cooperate to form a substantially square matrix.

FIG. 2 shows a main part of FIG. FIG. 2 (a)
FIG. 2B is a plan view, and FIG. 2B is a cross-sectional view taken along the line Ia-Ib in FIG.

As shown in FIG. 2A, the pixel 3 (3a,
3b, 3c) have a substantially square shape. Two opposing vertices of the four vertices of the square are aligned along the vertical and horizontal directions. Oblique sides (virtual lines) extending in the left-right symmetry direction by connecting the four vertices are respectively referred to as two oblique sides 27a, 27b and 27c, 27d.

The four oblique sides 27a, 27b, 27 of the pixel 3
A photoelectric conversion element (photodiode) 41 (41a, 41b, 41c) is arranged in a region surrounded by c and 27d. A transfer gate portion 45 is formed between the light receiving portion 41a of the photodiode 41 and the n-type semiconductor layers 31a and 31b forming a part of the charge transfer path 5.

The pixel 3a will be described below.
A transfer gate 45 is formed along. A high concentration of p along the other three hypotenuses 27b, 27c, 27d
First to third isolation regions 47 and 4 including the type semiconductor layer
7, 47 are formed.

More specifically, the four oblique sides 27a, 27b, 27c, 27 of the pixel 3c included in the first pixel column P1
The first separation region 47a is formed along the first pair of two oblique sides 27a and 27b of the left part d.

The first readout is performed between the vertical charge transfer path 31 and the upper oblique side 27c of the second set of two oblique sides 27c and 27d on the side opposite to the side where the first isolation region 47a is formed. A gate 45a is formed, and the oblique side 27d on which the first read gate 45a is not formed.
A second isolation region 47b is formed along.

The fourth pixel 3a included in the second pixel row P2
Of the three oblique sides 27a, 27b, 27c, 27d
, The third set of two hypotenuses 27a on the opposite side to the pixel row P1;
A first isolation region 47a is formed along 27b.

Of the four sets of two oblique sides 27c and 27d on the side opposite to the side where the first separation region 47a is formed, the first
Gate 45 of the pixel 3a included in the pixel column P1 of FIG.
along the oblique side 27c that does not face the third separation region 47
c is formed.

An n-type conductive layer 31a is formed in the semiconductor substrate 1 along the lower left oblique side 27b of the pixel 3a included in the second pixel column P2. Upper left oblique side 27a of pixel 3a
Along the line, an n-type conductive layer 31b is formed in the semiconductor substrate 1.

The n-type conductive layer 31a and the n-type conductive layer 31b are connected to form a vertical charge transfer path 5 in a zigzag or meandering shape in the vertical direction. Extending.

The plurality of pixels 3 forming the first pixel row Q1
a, 3a, along the lower right and left hypotenuses 27b, 27d of 3a,
The vertical charge transfer electrode 11-5 extends in the horizontal direction while meandering. A plurality of pixels 3a forming a first pixel column Q1,
The three sides 3a and 3a are surrounded by vertical charge transfer electrodes 11-4 and 11-5.

As shown in FIG. 2B, a deep p-well 43 is formed in the semiconductor substrate 1, and the photodiode 41, the vertical charge transfer path 31a, the transfer gate 45, and the isolation region 47 are formed in the p-well 43. Formed within.

The vertical charge transfer electrode 11-5 is formed on the region where the vertical charge transfer path 31a is formed.

A color filter CF is formed on the semiconductor substrate 1 via the flattening film H.

On the color filter CF, a micro lens ML formed of, for example, a photoresist is provided. The light is focused on the surface of the photodiode 41 by the micro lens ML.

A method for controlling the solid-state image pickup device A will be described below with reference to FIGS.

With reference to the timing charts of FIG. 3 to FIG. 6, the operation in the case where all pixels are read out after capturing a still image will be described.

As shown in FIG. 3, the vertical charge transfer electrode 11
-7 (V2) and a high pulse voltage as a read voltage are applied to the vertical charge transfer electrode 11-3 (V6). The read pulse voltage is, for example, 15V. Vertical charge transfer path 5 below vertical charge transfer electrode 11-7 and vertical charge transfer electrode 11
-3, a vertical charge transfer path 5 and a photodiode 3a,
The charge corresponding to green (hereinafter, referred to as “G charge”) from 3a is read. In the timing chart,
The G charge is represented by a black circle.

The G charges accumulated in the vertical charge transfer path 5 below the vertical charge transfer electrode 11-7 (V2) are transferred to the vertical charge transfer electrode 11-8 (V1), the first transfer electrode Va, and the second transfer electrode Vb. Are sequentially transferred to the horizontal charge transfer path 7 by applying a High (about 8 V) voltage.

The G charges accumulated in the vertical charge transfer path 5 below the vertical charge transfer electrode 11-3 (V6) are transferred from the vertical charge transfer electrode 11-4 (V5) to the vertical charge transfer electrode 11-8 (V
Until 1), a voltage of High (about 8 V) is sequentially applied to the first transfer electrode Va and the second transfer electrode Vb, so that the inside of the vertical charge transfer path 5 is directed toward the horizontal charge transfer path 7. Will be transferred.

The G charge transferred from the vertical charge transfer path 5 to the horizontal charge transfer path 7 is transferred in the horizontal charge transfer path 7 toward the output amplifier 17 by a two-phase driving method. The G signal amplified by the output amplifier 17 is stored in an external circuit.

Next, the remaining G charges are read.

As shown in FIG. 4, the vertical charge transfer electrodes 11
-5 (V4) and a high voltage as a read voltage is applied to the vertical charge transfer electrode 11-1 (V8). The remaining G charges are read out to the vertical charge transfer path 5.

Thereafter, the G charge is transferred to the horizontal charge transfer path 7 by the same operation as that described with reference to FIG.

The G charge transferred to the horizontal charge transfer path 7 is
The horizontal charge transfer path 7 is connected to an output amplifier 17 by a two-phase driving method.
Transfer in the direction of. The G signal amplified by the output amplifier 17 is stored in an external circuit.

Regarding the reading of the G charge, the same operation is performed in all the pixel groups PG (PG1 and PG2 in FIG. 1) in the horizontal direction.

The B charge and the R charge are read.

As shown in FIG. 5, the vertical charge transfer electrode 11
-8 (V1) and a high voltage is applied to the vertical charge transfer electrode 11-3 (V5) as a read voltage. The R charge (black square) is placed in the vertical charge transfer path 5a.
The B charge (a hatched square mark) is read to b.

Thereafter, as in the operation described with reference to FIG. 3, R charges and B charges are read out to an external circuit.

As shown in FIG. 6, the vertical charge transfer electrode 11
-6 (V3) and a high voltage as a read voltage are applied to the vertical charge transfer electrode 11-2 (V7). B charges are read out to the vertical charge transfer path 5a, and R charges are read out to the vertical charge transfer path 5b.

By the same operation as described above, the B charge and the R charge are read out to an external circuit. With the above operation, all pixels can be read. Still images can be reproduced clearly.

When a read pulse is applied to the vertical charge transfer electrode to read a signal from a pixel, the vertical charge transfer electrode 11 to which a read pulse is applied simultaneously is separated by four electrodes in the vertical direction. In addition, at the time of signal reading, only pixel signals of the same color are read out to the same one vertical charge transfer path 5.

Therefore, it is possible to prevent transfer charges from being mixed (color mixture) when different color signals exist in the same vertical charge transfer path during reading. Since the transfer charges are prevented from being mixed, the solid-state imaging device according to the present embodiment is less likely to cause image degradation when reproducing a still image.

A method of reading an image signal in a video mode for reproducing a moving image such as a monitor image of a digital camera will be described with reference to FIGS.

In the video mode, reading is not performed from all the pixels, and only charges of pixels included in specific rows 2 to 7 of a set of pixel columns Q in 8 rows are read.

FIGS. 7 to 9 show that V1 (electrode 11-
8) and V8 (electrode 11-1), V4 (electrode 11-5)
And a method of applying a read voltage only to V5 (electrode 11-4) to perform thinning-out readout.

As shown in FIG. 7, when a positive voltage, for example, 8 V is applied to V8, a high positive voltage, for example, 1
A 5 V read pulse is applied.

Vertical charge transfer path 5 included in pixel group PG1
The signal of G is read to a. V8 (electrode 11-1)
To V4 (electrode 11-5) in order to transfer the G signal charges. Charges corresponding to the G signal are accumulated in the vertical charge transfer path 5a below the electrode 11-5.

In this state, that is, in a state where a positive voltage, for example, 8 V is applied to V4, a read pulse of a high positive voltage, for example, 15 V is applied to V4.

The vertical charge transfer path 5 included in the pixel group PG1
The signal of R is read to a. The charge corresponding to the G signal is added and accumulated in the vertical charge transfer path 5 below the electrode 11-5 (signal GG).

From V4 (electrode 11-5) to V1 (electrode 11
By applying a positive voltage in order until -8), the signal charge corresponding to the GG signal is transferred.

The GG signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrode 12.

While a positive voltage, for example, 8V is applied to V1, a read pulse of a high positive voltage, for example, 15V is applied to V1.

Vertical charge transfer path 5 included in pixel group PG1
The signal of R is read to a. V1 (electrode 10-8)
To V5 (electrode 11-4) in order to transfer the R signal charge. Charges corresponding to the R signal are accumulated in the vertical charge transfer path 5 below the electrode 11-4.

In this state, that is, in a state where a positive voltage, for example, 8V is applied to V5, a read pulse of a high positive voltage, for example, 15V is applied to V5.

Vertical charge transfer path 5 included in pixel group PG1
The signal of R is read to a. An electric charge corresponding to the R signal is added and accumulated in the vertical charge transfer path 5 below the electrode 11-4 (signal RR).

From V4 (electrode 11-6) to V1 (electrode 11
The signal charge corresponding to the RR signal is transferred by sequentially applying a positive voltage until -8).

The RR signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrode 12.

FIG. 8 shows a method of reading charges from the pixels included in the pixel group PG2.

While a positive voltage, for example, 8 V is applied to V1, a read pulse of a high positive voltage, for example, 15V is applied to V1.

Vertical charge transfer path 5 included in pixel group PG2
The signal B is read to b. V1 (electrode 10-8)
To V5 (electrode 11-4) in order to transfer the signal charge of B by applying a positive voltage. The charge corresponding to the B signal is accumulated in the vertical charge transfer path 5b below the electrode 11-3.

In this state, that is, a state where a positive voltage, for example, 8 V is applied to V5, a read pulse of a high positive voltage, for example, 15 V is applied to V5.

Vertical charge transfer path 5 included in pixel group PG2
The signal B is read to b. The charge corresponding to the B signal is added and stored in the vertical charge transfer path 5b below the electrode 11-4 (signal BB).

From V5 (electrode 11-4) to V1 (electrode 11
Signal charges corresponding to the BB signal are transferred by sequentially applying a positive voltage until -8).

The BB signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrode 12.

While a positive voltage, for example, 8V is applied to V8, a high positive voltage, for example, 15V read pulse is applied to V8.

The vertical charge transfer path 5 included in the pixel group PG2
The signal of G is read to b. V8 (electrode 11-1)
To V4 (electrode 11-5) in order to transfer the G signal charges. Electric charges corresponding to the G signal are accumulated in the vertical charge transfer path 5 below the electrode 11-5.

In this state, that is, in a state where a positive voltage, for example, 8 V is applied to V4, a read pulse of a high positive voltage, for example, 15 V is applied to V4.

Vertical charge transfer path 5 included in pixel group PG2
The signal of G is read to b. The charge corresponding to the G signal is added and accumulated in the vertical charge transfer path 5 below the electrode 11-5 (signal GG).

From V4 (electrode 11-6) to V1 (electrode 11
By applying a positive voltage in order until -8), the signal charge corresponding to the GG signal is transferred.

The GG signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrode 12.

FIG. 9 shows the color arrangement of the charges read from the photodiodes to the vertical charge transfer paths 5a and 5b by the above-described reading method.

The RR charge obtained by adding the R charge is stored below the V1 electrode of the vertical charge transfer path 5a. Vertical charge transfer path 5
The GG charge obtained by adding the G charge is stored under the V4 electrode of a.

The BB charge obtained by adding the B charge is stored below the V1 electrode of the vertical charge transfer path 5b. Vertical charge transfer path 5
The GG charge obtained by adding the G charge is stored under the V4 electrode of b.

Similar charges are stored in the vertical charge transfer paths 5a and 5b, respectively.

In the above-described solid-state imaging device, as described with reference to FIGS. 7 to 9, by performing pixel thinning-out reading, a moving image can be promptly displayed.

In addition, by adding signals of the same color, the sensitivity of the image is improved and a clear image can be obtained.

FIG. 10 to FIG. 13 show that V2 (electrode 11
-7) and V3 (electrode 11-6), V6 (electrode 11-
3) A method in which a reading voltage is applied only to V7 (electrode 11-2) and thinning-out reading is performed will be described.

As shown in FIG. 10, a high positive voltage, for example, 15V read pulse is applied to V2 while a positive voltage, for example, 8V is applied to V2.

The G signal is read out to the vertical charge transfer path 5a. V2 (electrode 10-7) to V6 (electrode 11-
The signal charges of G are transferred by sequentially applying a positive voltage until 3). G is applied to the vertical charge transfer path 5a below the electrode 11-3.
The charge corresponding to the signal is accumulated.

In this state, that is, in a state where a positive voltage, for example, 8V is applied to V6, a read pulse of a high positive voltage, for example, 15V is applied to V6.

The G signal is read out to the vertical charge transfer path 5a. The electric charge corresponding to the G signal is added and accumulated in the vertical charge transfer path 5a below the electrode 11-3 (signal GG).

From V6 (electrode 11-3) to V1 (electrode 11
By applying a positive voltage in order until -8), the signal charge corresponding to the GG signal is transferred.

The GG signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrodes Va and Vb.

While a positive voltage, for example, 8V is applied to V7, a high positive voltage, for example, 15V read pulse is applied to V7.

The signal B is read out to the vertical charge transfer path 5a. V7 (electrode 11-3) to V3 (electrode 11-6)
The signal charge of B is transferred by applying a positive voltage in order by the time. Charges corresponding to the B signal are accumulated in the vertical charge transfer path 5a below the electrode 11-6.

In this state, that is, in a state where a positive voltage, for example, 8V is applied to V3, a read pulse of a high positive voltage, for example, 15V is applied to V3.

The signal B is read out to the vertical charge transfer path 5a. The charge corresponding to the B signal is added and stored in the vertical charge transfer path 5a below the electrode 11-6. The electric charge corresponding to the B signal is added and accumulated in the vertical charge transfer path 5a (signal BB).

From V3 (electrode 11-6) to V1 (electrode 11
Signal charges corresponding to the BB signal are transferred by sequentially applying a positive voltage until -8).

The BB signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrodes Va and Vb.

FIG. 11 shows the read operation of the pixels in the second field.

While a positive voltage, for example, 8V is applied to V2, a high positive voltage, for example, 15V read pulse is applied to V2.

The vertical charge transfer path 5 included in the pixel group PG2
The G signal is read to b. The G signal charges are transferred by applying a positive voltage in order from V2 (electrode 17-1) to V6 (electrode 11-3). Charges corresponding to the G signal are accumulated in the vertical charge transfer path 5b below the electrode 11-3.

In this state, that is, in a state where a positive voltage, for example, 8V is applied to V6, a read pulse of a high positive voltage, for example, 15V is applied to V6.

The G signal is further read out to the vertical charge transfer path 5b. The charge corresponding to the G signal is added and accumulated in the vertical charge transfer path 5b below the electrode 11-3 (signal G
G).

From V5 (electrode 11-3) to V1 (electrode 11
By applying a positive voltage in order until -8), the signal charge corresponding to the GG signal is transferred.

The GG signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrode 12.

While a positive voltage, for example, 8V is applied to V7, a high positive voltage, for example, a 15V read pulse is applied to V7.

The R signal is read out to the vertical charge transfer path 5b. V7 (electrode 11-2) to V3 (electrode 11-6)
By applying a positive voltage in order, the signal charge of R is transferred. Charges corresponding to the R signal are accumulated in the vertical charge transfer path 5b below the electrode 11-6.

In this state, that is, in a state where a positive voltage, for example, 8V is applied to V3, a read pulse of a high positive voltage, for example, 15V is applied to V3.

The R signal is further read out to the vertical charge transfer path 5b. The charge corresponding to the R signal is added and accumulated in the vertical charge transfer path 5b below the electrode 11-6 (the signal R
R).

From V3 (electrode 11-6) to V1 (electrode 11
The signal charge corresponding to the RR signal is transferred by sequentially applying a positive voltage until -8).

By applying a positive voltage to the electrode 12, the RR signal is transferred to the horizontal charge transfer path 7.

FIG. 12 shows the color arrangement of the charges read from the photodiodes to the vertical charge transfer paths 5a and 5b by the above-described reading method.

The BB charge obtained by adding the B charge is stored below the V3 electrode in the vertical charge transfer path 5a. Vertical charge transfer path 5
The GG charge to which the G charge is added is accumulated below the V6 electrode of a.

The RR charge to which the R charge is added is accumulated below the V3 electrode of the vertical charge transfer path 5b. Vertical charge transfer path 5
The GG charge obtained by adding the G charge is stored under the V3 electrode of b.

The same charge is applied to the other vertical charge transfer paths 5a, 5a
b.

In the above-described solid-state imaging device, as described with reference to FIGS. 10 to 11, by performing pixel thinning-out reading, a moving image can be displayed quickly.

In addition, by adding signals of the same color, the sensitivity of the image is improved and a clear image can be obtained.

In the above solid-state imaging method, GG / RG
Although the case of an alternate filter arrangement has been described, it is possible to read out signals from pixels even with another arrangement of color filters.

As the thinning-out reading method, a method of reading out a signal by applying a reading voltage to two vertically adjacent electrodes of a set of eight vertical charge transfer electrode groups has been described. A method of applying a read voltage to the charge transfer electrode is also possible.

In the solid-state imaging device, two adjacent
The signal of the pixel column is read out to one shared vertical charge transfer path. Processing accuracy of the vertical charge transfer path can be reduced. The size of a pixel, for example, the size of a photodiode can be relatively increased, and the amount of charge stored in the pixel can be increased. From another viewpoint, if the processing accuracy of the vertical charge transfer path is the same, the pixel size can be reduced.

The number of stages of the horizontal charge transfer path connected to the vertical charge transfer path may be の of the number of photodiodes included in the pixels arranged in the row direction. Therefore, the pitch of the horizontal charge transfer electrodes can be increased, and the horizontal charge transfer path can be processed with low processing accuracy. The production yield of the solid-state imaging device can be improved.

In the solid-state imaging device, when the reading method according to the present embodiment is used, all pixels of a still image can be read. In addition, since it is easy to perform thinning-out reading, it is possible to easily read and reproduce a monitor image displaying a moving image.

In the solid-state imaging device according to the present embodiment, the pixel has been described as having a substantially square shape.
The pixel shape may be a shape other than a square. For example, a rectangular or regular hexagonal pixel shape may be used.

Further, regarding the color arrangement of the pixels in the solid-state image sensor, it is sufficient that the solid-state image sensor has a configuration that enables color imaging. In addition to the three primary colors (red (R), green (G), and blue (B)), there is also a so-called complementary color type color arrangement.

As a complementary color filter array,
For example, (i) green (G), cyan (Cy) and yellow (Ye)
(Ii) cyan (Cy), yellow (Ye), and white or colorless (W) color filters; (iii) cyan (Cy), magenta (M)
g), yellow (Ye) and green (G) color filters, and (iv) cyan (Cy), yellow (Ye), green (G) and white or colorless (W) color filters Things, etc. are known.

The arrangement pattern of the color filters in the color filter array of the primary color system may be a Bayer type, an interline type, a G stripe RB checker type, or the like, in addition to the G stripe RB perfect checker pattern illustrated in the present embodiment. Is used.

It will be obvious to those skilled in the art that various changes, improvements, combinations, and the like can be made.

[0173]

According to the present invention, the processing accuracy of the solid-state imaging device, particularly, the processing accuracy of the vertical transfer path and the vertical transfer electrode can be reduced.
Further, the processing accuracy of the horizontal charge transfer path can be reduced. With the same processing accuracy, it is possible to increase the density of pixels.

It is possible to improve the production yield. It is also possible to increase the reliability of the solid-state imaging device.

According to the solid-state imaging device reading method, all pixels of a still image can be read. In addition, since it is easy to perform thinning-out reading, it is possible to easily read and reproduce a monitor image displaying a moving image.

[Brief description of the drawings]

FIG. 1 is a plan view of a solid-state imaging device according to an embodiment of the present invention.

FIG. 2 is an enlarged view of a main part of a pixel portion of the solid-state imaging device, FIG. 2 (a) is a plan view, and FIG. 2 (b) is a cross-sectional view.

FIG. 3 is a timing chart showing an operation of reading out a still image of the solid-state imaging device.

FIG. 4 is a timing chart showing a still image reading operation of the solid-state imaging device.

FIG. 5 is a timing chart showing a still image reading operation of the solid-state imaging device.

FIG. 6 is a timing chart showing a still image reading operation of the solid-state imaging device.

FIG. 7 is a timing chart showing a monitor image reading operation of the solid-state imaging device.

FIG. 8 is a timing chart showing a monitor image reading operation of the solid-state imaging device.

FIG. 9 is a diagram showing an arrangement of color signals in a vertical charge transfer path in a monitor image reading operation of the solid-state imaging device.

FIG. 10 is a timing chart showing a monitor image reading operation of the solid-state imaging device.

FIG. 11 is a timing chart showing a monitor image reading operation of the solid-state imaging device.

FIG. 12 is a diagram showing an arrangement of color signals in a vertical charge transfer path in the monitor image reading operation of the solid-state imaging device.

FIG. 13 is a plan view of a conventional solid-state imaging device, mainly showing a structure in a semiconductor region.

FIG. 14 is a plan view of a conventional solid-state imaging device, mainly showing a structure of a charge transfer electrode.

[Explanation of symbols]

 A solid-state imaging device B display unit EG vertical charge transfer electrode group P1 first pixel column P2 second pixel column PG pixel column group Q1 first pixel row Q2 second pixel row V1 to V8 Application to vertical transfer electrodes Voltage φ1, φ2 Voltage applied to horizontal transfer electrodes 1 Semiconductor substrate 3 Pixel 3a Pixel (green) 3b Pixel (blue) 3c Pixel (red) 11 Vertical charge transfer electrode 15 Horizontal charge transfer electrode 17 Output amplifier 41 Photodiode (photoelectric conversion) Element) 45 transfer gate (readout gate)

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[Procedure amendment]

[Submission Date] April 7, 2000 (200.4.7)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0003

[Correction method] Change

[Correction contents]

FIG. 13 shows a general interline type CC.
It is a top view of D solid-state imaging device.

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0023

[Correction method] Change

[Correction contents]

With the above operation, the charges from the pixels in the row connected to V1 are read.

[Procedure amendment 3]

[Document name to be amended] Drawing

[Correction target item name] Fig. 1

[Correction method] Change

[Correction contents]

FIG.

[Procedure amendment 4]

[Document name to be amended] Drawing

[Correction target item name] Fig. 6

[Correction method] Change

[Correction contents]

FIG. 6

[Procedure amendment 5]

[Document name to be amended] Drawing

[Correction target item name] Fig. 7

[Correction method] Change

[Correction contents]

FIG. 7

[Procedure amendment 6]

[Document name to be amended] Drawing

[Correction target item name] Fig. 8

[Correction method] Change

[Correction contents]

FIG. 8

[Procedure amendment 7]

[Document name to be amended] Drawing

[Correction target item name] FIG.

[Correction method] Change

[Correction contents]

FIG. 10

[Procedure amendment 8]

[Document name to be amended] Drawing

[Correction target item name] FIG.

[Correction method] Change

[Correction contents]

FIG. 11

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4M118 AA10 AB01 BA13 CA03 DA13 DB01 DB06 DB09 DB11 FA01 FA06 FA43 GC08 GC09 GC14 GC15 5C065 AA01 AA03 BB42 DD03 EE10

Claims (6)

[Claims] 1. A plurality of pixel groups arranged on a two-dimensional plane, wherein each pixel group includes a first pixel column including a plurality of pixels arranged at a first pixel pitch in a vertical direction. The first
Of the first pixel pitch in the vertical direction with respect to the pixel column
And a second pixel column including a plurality of pixels aligned and shifted by two pixels, wherein the second pixel column is a second pixel between first pixel columns of an adjacent pixel group in the horizontal direction. Pitch one
/ 2, a plurality of pixel groups arranged at the position of / 2, a first separation region formed between pairs of horizontally adjacent pixels, a first pixel column of each pixel group, and a second A vertical charge transfer path extending in the vertical direction while meandering between the pixel columns; a pixel included in one pixel row included in the first pixel column and aligned in the row direction; A plurality of vertical charge transfer electrodes extending in the horizontal direction and formed between the one pixel row and pixels included in two pixel rows that are vertically adjacent and aligned in the row direction. A drive circuit that independently applies a voltage to each of the vertical charge transfer electrodes for a set of eight vertical charge transfer electrodes that are vertically adjacent to each other among the transfer electrodes; Receiving the charge transferred from the vertical charge transfer path and transferring it in the horizontal direction. A solid-state imaging device including a horizontal charge transfer path, and an output amplifier to read out to the outside by amplifying the charge from being formed at one end of the horizontal charge transfer path horizontal charge transfer path that. 2. A pixel included in the first pixel column is a green pixel including a photoelectric conversion element and a green filter, and a pixel included in the second pixel column includes a photoelectric conversion element and a red filter. The red pixel including and the blue pixel including the photoelectric conversion element and the blue filter are alternately arranged in the vertical direction,
The solid-state imaging device according to claim 1, wherein red pixels and blue pixels included in the plurality of second pixel columns are alternately arranged in a horizontal direction. 3. A plurality of pixel groups arranged on a two-dimensional plane, wherein each pixel group includes a first pixel column including a plurality of pixels aligned and arranged at a first pixel pitch in a vertical direction. The first
Of the first pixel pitch in the vertical direction with respect to the pixel column
And a second pixel column including a plurality of pixels aligned and shifted by two pixels, wherein the second pixel column is a second pixel between first pixel columns of an adjacent pixel group in the horizontal direction. Pitch one
/ 2, a first separation region formed between horizontally adjacent pixel group pairs, the first pixel column of each pixel group, and the second pixel group. A vertical charge transfer path extending in the vertical direction while meandering between the pixel columns; a pixel included in one pixel row included in the first pixel column and aligned in the row direction; A plurality of vertical charge transfer electrodes extending in the horizontal direction, formed between the one pixel row and the pixels included in the two pixel rows that are vertically adjacent and aligned in the row direction. A drive circuit for independently applying a voltage to each of the eight vertical charge transfer electrodes in the vertical charge transfer electrodes, the lower end of each of the plurality of vertical charge transfer paths; And transfers the charges in the horizontal direction upon receiving the charges transferred from the vertical charge transfer paths. A horizontal charge transfer path, and an output amplifier formed at one end of the horizontal charge transfer path for amplifying and reading out the charges from the horizontal charge transfer path. A green pixel including a conversion element and a green filter, and a pixel included in the second pixel column includes a red pixel including a photoelectric conversion element and a red filter, and a blue pixel including a photoelectric conversion element and a blue filter. A method for reading out a solid-state imaging device, wherein red pixels and blue pixels included in a plurality of second pixel columns are alternately arranged in a vertical direction and are alternately arranged in a horizontal direction. Applying a read voltage for reading out only charges corresponding to the same color to the same vertical charge transfer path with respect to the eighth vertical charge transfer electrodes to read out charges to the vertical charge transfer paths; b) the vertical charge Read on transfer path Transferring the discharged charges toward the horizontal charge transfer path; c) transferring the charges transferred to the horizontal charge transfer path toward the output amplifier; and d) transferring the horizontal charge transfer path. A solid-state imaging device comprising the steps of: amplifying the electric charge from the pixel by the output amplifier and outputting the amplified electric signal to the outside; and sequentially repeating steps a) to d) for the pixels in different rows and reading out all the electric charges from the pixels. Control method. 4. A plurality of pixel groups arranged on a two-dimensional plane, wherein each pixel group includes a first pixel column including a plurality of pixels arranged at a first pixel pitch in a vertical direction. The first
Of the first pixel pitch in the vertical direction with respect to the pixel column
And a second pixel column including a plurality of pixels aligned and shifted by two pixels, wherein the second pixel column is a second pixel between first pixel columns of an adjacent pixel group in the horizontal direction. Pitch one
/ 2, a first separation region formed between horizontally adjacent pixel group pairs, the first pixel column of each pixel group, and the second pixel group. A vertical charge transfer path extending in the vertical direction while meandering between the pixel columns; a pixel included in one pixel row included in the first pixel column and aligned in the row direction; A plurality of vertical charge transfer electrodes extending in the horizontal direction, formed between the one pixel row and the pixels included in the two pixel rows that are vertically adjacent and aligned in the row direction. A drive circuit for independently applying a voltage to each of the vertical charge transfer electrodes for every eight vertical charge transfer electrodes of the vertical charge transfer electrodes, the lower ends of the plurality of vertical charge transfer paths; And transfers the charges in the horizontal direction upon receiving the charges transferred from the vertical charge transfer paths. A horizontal charge transfer path, and an output amplifier formed at one end of the horizontal charge transfer path for amplifying and reading out the charges from the horizontal charge transfer path. A green pixel including a conversion element and a green filter, and a pixel included in the second pixel column includes a red pixel including a photoelectric conversion element and a red filter, and a blue pixel including a photoelectric conversion element and a blue filter. A thin-out reading method for a solid-state imaging device in which red pixels and blue pixels included in a plurality of second pixel columns are alternately arranged in a vertical direction and are alternately arranged in a horizontal direction. Applying a read voltage to two vertically adjacent vertical charge transfer electrodes among the vertical charge transfer electrodes from the first to eighth vertical charge transfer electrodes; and b) transferring the charges read out to the vertical charge transfer paths collectively. Process and A) transferring charge from the vertical charge transfer path toward the horizontal charge transfer; d) transferring charge transferred to the horizontal charge transfer path toward the output amplifier; e) transferring the horizontal charge. Amplifying the charge from the transfer path by the output amplifier and outputting the amplified charge to the outside. 5. A plurality of pixel groups arranged on a two-dimensional plane, wherein each pixel group includes a first pixel column including a plurality of pixels arranged at a first pixel pitch in a vertical direction. The first
Of the first pixel pitch in the vertical direction with respect to the pixel column
And a second pixel column including a plurality of pixels aligned and shifted by two pixels, wherein the second pixel column is a second pixel between first pixel columns of an adjacent pixel group in the horizontal direction. Pitch one
/ 2, a first separation region formed between horizontally adjacent pixel group pairs, the first pixel column of each pixel group, and the second pixel group. A vertical charge transfer path extending in the vertical direction while meandering between the pixel columns; a pixel included in one pixel row included in the first pixel column and aligned in the row direction; A plurality of vertical charge transfer electrodes extending in the horizontal direction, formed between the one pixel row and the pixels included in the two pixel rows that are vertically adjacent and aligned in the row direction. A drive circuit for independently applying a voltage to each of the vertical charge transfer electrodes for every eight vertical charge transfer electrodes of the vertical charge transfer electrodes, the lower ends of the plurality of vertical charge transfer paths; And transfers the charges in the horizontal direction upon receiving the charges transferred from the vertical charge transfer paths. A horizontal charge transfer path, and an output amplifier formed at one end of the horizontal charge transfer path for amplifying and reading out the charges from the horizontal charge transfer path. A green pixel including a conversion element and a green filter, and a pixel included in the second pixel column includes a red pixel including a photoelectric conversion element and a red filter, and a blue pixel including a photoelectric conversion element and a blue filter. A thin-out reading method for a solid-state imaging device in which red pixels and blue pixels included in a plurality of second pixel columns are alternately arranged in a vertical direction and are alternately arranged in a horizontal direction. Vertical charge transfer electrodes corresponding to pixels of two pixel columns, one from the first pixel column and one from the second pixel column, which are not adjacent in the vertical direction among the vertical charge transfer electrodes from the first to the eighth. Apply read voltage to electrode B) transferring the charge read in the step a) to the pixel row from which a signal of the same color as the read charge can be read in the vertical charge transfer path; and c) the b). After the step, the step of adding the charges by reading the signal of the same color; and d) the step of transferring the charges added in the step c) from the vertical charge transfer path toward the horizontal charge transfer. E) transferring the charge transferred to the horizontal charge transfer path toward the output amplifier; and f) amplifying the charge from the horizontal charge transfer path by the output amplifier and outputting the charge to the outside. A method for controlling a solid-state imaging device. 6. A plurality of pixel groups arranged on a two-dimensional plane, wherein each pixel group includes a first pixel column including a plurality of pixels arranged at a first pixel pitch in a vertical direction. The first
Of the first pixel pitch in the vertical direction with respect to the pixel column
And a second pixel column including a plurality of pixels aligned and shifted by two pixels, wherein the second pixel column is a second pixel between first pixel columns of an adjacent pixel group in the horizontal direction. Pitch one
/ 2, a first separation region formed between horizontally adjacent pixel group pairs, the first pixel column of each pixel group, and the second pixel group. A vertical charge transfer path extending in the vertical direction while meandering between the pixel columns; a pixel included in one pixel row included in the first pixel column and aligned in the row direction; A plurality of vertical charge transfer electrodes extending in the horizontal direction, formed between the one pixel row and the pixels included in the two pixel rows that are vertically adjacent and aligned in the row direction. A drive circuit for independently applying a voltage to each of the vertical charge transfer electrodes for every eight vertical charge transfer electrodes of the vertical charge transfer electrodes, the lower ends of the plurality of vertical charge transfer paths; And transfers the charges in the horizontal direction upon receiving the charges transferred from the vertical charge transfer paths. A horizontal charge transfer path, and an output amplifier formed at one end of the horizontal charge transfer path for amplifying and reading out the charges from the horizontal charge transfer path. A green pixel including a conversion element and a green filter, and a pixel included in the second pixel column includes a red pixel including a photoelectric conversion element and a red filter, and a blue pixel including a photoelectric conversion element and a blue filter. A method for reading a solid-state imaging device in which red pixels and blue pixels included in a plurality of second pixel columns are alternately arranged in a vertical direction and are alternately arranged in a horizontal direction. A) applying a read voltage to read out only charges corresponding to the same color from the same vertical charge transfer path to the first to eighth vertical charge transfer electrodes to apply the vertical charge from the photoelectric conversion element; transfer B) transferring the charge read out to the vertical charge transfer path toward the horizontal charge transfer path; and C) outputting the charge transferred to the horizontal charge transfer path to the output. A step of transferring the charges from the horizontal charge transfer path to the amplifier, and a step of amplifying the charges from the horizontal charge transfer path by the output amplifier and outputting the amplified charges to the outside; and steps A) to D) for pixels in different rows are sequentially repeated. The step of reading out all the charges from the pixels and the step of reading out a moving image: a) applying a readout voltage to two vertically adjacent vertical charge transfer electrodes among the first to eighth vertical charge transfer electrodes; B) transferring the charges read out to the vertical charge transfer path collectively; c) transferring the charge from the vertical charge transfer path toward the horizontal charge transfer; Horizontal Transferring the charge transferred to the load transfer path toward the output amplifier; and e) amplifying the charge from the horizontal charge transfer path by the output amplifier and outputting the charge to the outside. Method.