JP4098444B2 - Control method of solid-state image sensor - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention is a solid-state imaging device Control method More specifically, a pixel-shifted solid-state imaging element in which adjacent pixels are arranged with a 1/2 pitch shift in the vertical and horizontal directions. Of child It relates to a control method.
[0002]
[Prior art]
In a solid-state image sensor, for example, a CCD solid-state image sensor for capturing a still image, it is desired to increase the density of pixels.
[0003]
FIG. 13 is a plan view of a general interline CCD solid-state imaging device.
[0004]
The solid-state imaging device is formed on a semiconductor substrate 101 such as silicon.
[0005]
A pixel 103, a vertical charge transfer path 105, a horizontal charge transfer path 107, and an output amplifier 111 are formed on the semiconductor substrate 101, and constitute a single CCD solid-state imaging device X as a whole. A plurality of pixels 103 are aligned on the semiconductor substrate 101 in the vertical and horizontal directions.
[0006]
The pixel 103 includes a photodiode (photoelectric conversion element) 103a and a reading gate (transfer gate) 103b. The photodiode 103a converts received light into electric charge and accumulates it. The transfer gate 103 b reads out the charge accumulated in the photodiode 103 a to the vertical charge transfer path 105.
[0007]
Between each pixel column P11, P11, P11 in which a plurality of pixels 103, 103, 103 are arranged in the vertical direction, one vertical charge transfer path 105 is arranged corresponding to one pixel column P11. Has been. The vertical charge transfer path 105 is, for example, an n-type conductive layer formed on the semiconductor substrate 101. A horizontal charge transfer path 107 is provided at the lower end of the vertical charge transfer path 105.
[0008]
The horizontal charge transfer path 107 mainly includes an n-type conductive layer 108 in the semiconductor substrate 101 and a horizontal charge transfer electrode 121 made of two layers of polysilicon (1 poly, 2 poly) formed on the semiconductor substrate 1. Element.
[0009]
In the n-type conductive layer 108, a high concentration region 108a having a high n-type impurity concentration and a low concentration region 108b having a low n-type impurity concentration are alternately provided. The high concentration region 108a forms a potential well with low potential energy. The low concentration region 108b forms a potential barrier with high potential energy. Potential barriers and potential wells are arranged alternately in the horizontal direction. One potential barrier and one potential well constitute one set, and one transfer unit of charge (hereinafter referred to as “one packet”) is formed by a structure in which the one set is repeated twice. Many packets are formed in the horizontal direction.
[0010]
The first-layer polysilicon electrodes (horizontal transfer electrodes 121-1, 121-3, 121-5,...) Are formed on the high concentration region 108b (potential barrier). Second-layer polysilicon electrodes (horizontal transfer electrodes 121-0, 121-2, 121-4, 121-6,...) Are formed.
[0011]
The horizontal charge transfer electrode 121-0 and the horizontal charge transfer electrode 121-1 are connected and a voltage waveform φ1 is applied. The horizontal transfer electrode 121-2 and the horizontal transfer electrode 121-3 are connected and the voltage waveform φ2 is applied. Similarly, the horizontal transfer electrode 121-4 and the horizontal transfer electrode 121-5 are connected and the voltage φ1 is applied.
[0012]
As shown in FIG. 14, on the vertical charge transfer path 105, two vertical charge transfer electrodes, for example, a vertical charge transfer electrode 115-1 and a vertical charge transfer electrode 115-2 are provided in a gap between pixels arranged in the row direction. 115 is provided.
[0013]
A voltage waveform from V1 to V4 is applied to the vertical charge transfer electrodes 115-1, 115-2, 115-3, and 115-4. Similarly, voltage waveforms from V1 to V4 are applied to the vertical transfer electrodes 115-5 to 115-8 and the vertical transfer electrodes 115-9 to 15-112. The voltage waveforms V1 to V4 are set to, for example, 0V when forming a potential barrier in the vertical charge transfer path, 8V when forming a potential well for charge transfer, and 15V when reading charge from a pixel.
[0014]
The vertical charge transfer path 105 is electrically connected to a region where the potential well is formed at a rate of one for each packet of the horizontal charge transfer path 107.
[0015]
Hereinafter, the operation of the solid-state imaging device will be described with reference to FIGS.
[0016]
When V1 is set to 15 V, the charges accumulated in the photodiodes 103a of all the pixels connected to V1 are read out to the vertical charge transfer path 105 through the transfer gate 103b.
[0017]
A positive relatively low voltage, for example, a voltage of 8V is applied to the vertical transfer electrode 115-1, a voltage of 8V is applied to the vertical transfer electrode 115-2, and a voltage of 8V is also applied to the vertical transfer electrode 115-3. To do. The voltage of the vertical transfer electrode 115-1 is returned to 0V, and a voltage of 8V is applied to the vertical transfer electrode 115-4. By repeating this operation, charges are transferred in the vertical charge transfer path 105 in the direction of the horizontal charge transfer path by the four-phase driving method.
[0018]
When V1, V2, and V3 are positive relatively low voltages, for example, 8V, and V4 is 0V, the read charges are distributed under the three vertical charge transfer electrodes to which V1, V2, and V3 are applied.
[0019]
When V1 is returned to 0V, the charge is confined under the electrodes of V2 and V3. When V4 is set to 8V, the charge spreads under the electrodes of V2, V3, and V4. By repeating this operation, charges are transferred in the vertical charge transfer path 5 toward the horizontal charge transfer path by the four-phase driving method.
[0020]
If φ1 of the horizontal charge transfer electrode is set to 0 V, for example, and φ2 is set to 8 V, for example, the charge below the φ1 electrode is transferred to the right side of the φ2 electrode. At this time, a potential barrier is formed in the left region under the φ1 electrode to prevent backflow of charges.
[0021]
Therefore, charges can be transferred in the horizontal charge transfer path 107 by two-phase driving without causing pixel mixing.
[0022]
As described above, electrons are transferred in the horizontal charge transfer path 107 in the amplifier direction by the two-layer driving method of φ1 and φ2.
[0023]
With the above operation, the charge from the pixels in the row connected to V1 is read out.
[0024]
Next, charges from pixels in other rows are read out in the same manner. After reading out all charges, a read pulse is applied to V2 to read the charges of the pixels connected to V2. Similarly, the charges of the pixels connected to V3 and V4 are sequentially read out.
[0025]
The charges transferred into the horizontal charge transfer path 107 are transferred to the output amplifier 111 by, for example, a two-phase driving method. The output amplifier 111 amplifies the signal and takes it out as image information.
[0026]
By arranging the photodiodes 103a in a two-dimensional manner, a two-dimensional image signal can be obtained.
[0027]
[Problems to be solved by the invention]
With the demand for higher pixel density, it is also necessary to reduce the pixel size itself.
[0028]
However, in the solid-state imaging device X described above, one vertical charge transfer path 105 is formed for one pixel column P11. While transferring the charges transferred from one vertical charge transfer path 105 to the horizontal charge transfer path 107 to the horizontal charge transfer path 107 connected to the two vertical charge transfer paths 105 adjacent in the horizontal direction, Two horizontal transfer electrodes 108a, 108b, 108a, 108b are required.
[0029]
For example, when the pixel 103 is miniaturized to about 2 to 3 microns square, it becomes difficult to finely process the horizontal charge transfer electrode 121. In addition, as the pixel 103 is miniaturized, the area of the photoelectric conversion element 103a, for example, a photodiode is reduced, and the accumulated signal charge is reduced. Therefore, the dynamic range cannot be increased.
[0030]
In addition, as the total number of pixels of the solid-state image sensor increases, the time required for reading out one frame of image signal increases.
[0031]
In the case of a general digital camera, the frame rate of the image signal is NTSC ( N national T elvision S system C In the case of the ommitee) method, it is 1/30 second.
[0032]
When reproducing a still image taken using a digital camera, there is no particular problem even if the time required for reading out an image signal is increased.
[0033]
In the case of a display element for a monitor provided in a digital camera, it is necessary to display a moving image in real time. When displaying a moving image, it becomes impossible to follow the frame rate as the number of pixels increases. When the number of pixels exceeds 1 million pixels, it is difficult to read out image signals from all pixels in 1/30 seconds. A clear image cannot be obtained.
[0034]
An object of the present invention is to provide a solid-state imaging device capable of increasing the pixel density while relaxing the fine accuracy of the horizontal transfer electrode. Control method Is to provide.
[0035]
In addition, a solid-state imaging device that can clearly display moving images for monitoring even when the number of pixels increases. Of child It is to provide a control method.
[0037]
[Means for Solving the Problems]
Of the present invention one According to an aspect, there are a plurality of pixel groups arranged on a two-dimensional plane, each pixel group including a first pixel column including a plurality of pixels aligned in a vertical direction at a first pixel pitch; A second pixel column including a plurality of pixels arranged in alignment with a shift of ½ pixel of the first pixel pitch in a direction perpendicular to the first pixel column, and the second pixel column includes: Formed between a plurality of pixel groups arranged at a position half the second pixel pitch between the first pixel columns of adjacent pixel groups and a pair of pixel groups adjacent in the horizontal direction with respect to the horizontal direction. Between the first separation region and the first pixel column and the second pixel column of each pixel group A vertical charge transfer path formed in a vertical manner while meandering one by one, and both the charges of the pixels included in the first pixel column and the second pixel column belonging to the same pixel group are read out. A vertical charge transfer path, a first pixel row in which pixels included in the first pixel column are aligned in a horizontal direction, and the second pixel column adjacent to the first pixel row in the vertical direction. Vertical charges that are formed to extend in the horizontal direction while meandering one by one between the second pixel rows in which the included pixels are aligned in the horizontal direction, and transfer the charges in the vertical charge transfer path in the vertical direction A first type of vertical charge transfer electrode to which a voltage for reading out charges from the pixels included in the first pixel row to the vertical charge transfer path is applied; and the second pixel row A second type of voltage is applied to read out charges from the pixel to the vertical charge transfer path. A straight charge transfer electrodes, and the vertical charge transfer electrodes alternately arranged in the vertical direction, A drive circuit for independently applying a voltage to each vertical charge transfer electrode for each set of eight vertical charge transfer electrodes adjacent in the vertical direction among the vertical charge transfer electrodes, and a plurality of the vertical charge transfer paths A horizontal charge transfer path provided at the lower end and receiving the charge transferred from the vertical charge transfer path and transferring it in the horizontal direction; A horizontal charge transfer electrode for transferring charges in the horizontal charge transfer path; And an output amplifier that is formed at one end of the horizontal charge transfer path and amplifies the charge from the horizontal charge transfer path and reads it out. The pixels included in the first pixel column include a photoelectric conversion element and a green filter. In the pixel included in the second pixel column, red pixels including photoelectric conversion elements and red filters, and blue pixels including photoelectric conversion elements and blue filters are alternately arranged in the vertical direction. A method of reading a solid-state imaging device in which red pixels and blue pixels included in a plurality of the second pixel columns are alternately arranged in the horizontal direction, a) A voltage for reading out charges is applied to the first type vertical charge transfer electrodes in the vertical direction every other vertical type charge transfer electrode of the first type, so that the first pixel columns in the column direction For every other pixel, the charge corresponding to green is read out to the vertical charge transfer path, and then the read charge corresponding to green is passed through the vertical charge transfer path and the horizontal charge transfer path to the output amplifier. A step of transferring, amplifying by the output amplifier and outputting to the outside; (b) reading out the charge to the remaining first type vertical charge transfer electrodes to which the voltage for reading out the charge in step (a) has not been applied. A voltage is applied to read out charges corresponding to green color from the remaining pixels of the first pixel column from which charges have not been read out in the step (a) to the vertical charge transfer path, and then read out green color. The electric charge corresponding to Transferring to the output amplifier through the transfer path and the horizontal charge transfer path, amplifying by the output amplifier and outputting to the outside; and (c) the second type vertical charge transfer electrode in the vertical direction. A voltage for reading out charges is applied to every other two vertical charge transfer electrodes, and a charge corresponding to one of red or blue is applied to every other pixel in the column direction from the second pixel column. Read to the vertical charge transfer path, and then transfer the charge corresponding to one of the read red or blue to the output amplifier through the vertical charge transfer path and the horizontal charge transfer path, and amplify by the output amplifier And (d) applying a voltage for reading out charges to the remaining second type vertical charge transfer electrodes to which the voltage for reading out charges in step (c) is not applied, The step (c) of the pixel column The charge corresponding to the other of red or blue is read from the remaining pixels from which the charge has not been read out to the vertical charge transfer path, and then the charge corresponding to the other of the read red or blue is transferred to the vertical charge transfer path. And transferring to the output amplifier through the horizontal charge transfer path, amplifying by the output amplifier, and outputting to the outside A method for controlling a solid-state imaging device is provided.
[0038]
According to another aspect of the present invention, a plurality of pixel groups arranged on a two-dimensional plane, each pixel group including a plurality of pixels arranged in a vertical direction at a first pixel pitch. A first pixel column and a second pixel column including a plurality of pixels arranged in alignment with a shift of ½ pixel of the first pixel pitch in a direction perpendicular to the first pixel column; The pixel columns in the horizontal direction are a plurality of pixel groups arranged at a position half the second pixel pitch between the first pixel columns of the adjacent pixel groups, and a pixel group adjacent in the horizontal direction. A first separation region formed between the pair, and between the first pixel column and the second pixel column of each pixel group; A vertical charge transfer path formed in a vertical manner while meandering one by one, and both the charges of the pixels included in the first pixel column and the second pixel column belonging to the same pixel group are read out. A vertical charge transfer path, a first pixel row in which pixels included in the first pixel column are aligned in a horizontal direction, and the second pixel column adjacent to the first pixel row in the vertical direction. Vertical charges that are formed to extend in the horizontal direction while meandering one by one between the second pixel rows in which the included pixels are aligned in the horizontal direction, and transfer the charges in the vertical charge transfer path in the vertical direction A first type of vertical charge transfer electrode to which a voltage for reading out charges from the pixels included in the first pixel row to the vertical charge transfer path is applied; and the second pixel row A second type of voltage is applied to read out charges from the pixel to the vertical charge transfer path. A straight charge transfer electrodes, and the vertical charge transfer electrodes alternately arranged in the vertical direction, A drive circuit for independently applying a voltage to each vertical charge transfer electrode for each set of eight vertical charge transfer electrodes adjacent in the vertical direction among the vertical charge transfer electrodes, and a plurality of the vertical charge transfer paths A horizontal charge transfer path provided at the lower end and receiving the charge transferred from the vertical charge transfer path and transferring it in the horizontal direction; A horizontal charge transfer electrode for transferring charges in the horizontal charge transfer path; And an output amplifier that is formed at one end of the horizontal charge transfer path and amplifies the charge from the horizontal charge transfer path and reads it out. The pixels included in the first pixel column include a photoelectric conversion element and a green filter. In the pixel included in the second pixel column, red pixels including photoelectric conversion elements and red filters, and blue pixels including photoelectric conversion elements and blue filters are alternately arranged in the vertical direction. A thinning-out readout method for a solid-state imaging device in which red pixels and blue pixels included in a plurality of the second pixel columns are alternately arranged in the horizontal direction, (E) A voltage for reading out charges is applied to one of the first type of vertical charge transfer electrodes among the set of every eight vertical charge transfer electrodes, so that the first pixel of the first pixel group The charge corresponding to green is read from the pixels included in the column to the vertical charge transfer path corresponding to the first pixel group, and the second pixel group adjacent to the first pixel group in the horizontal direction is read out. A charge corresponding to green is read from the pixels included in one pixel column to the vertical charge transfer path corresponding to the second pixel group, and then the read first pixel group and second read Transferring both of the charges corresponding to green of the pixel group to the horizontal charge transfer path through the read vertical charge transfer paths, and (f) the vertical charge transfer electrodes of the eight vertical charge transfer electrodes. One of the pairs of vertical charge transfer electrodes of the second type is read in the step (e). A voltage for reading out charges is applied to the first pixel group during a period in which the charge corresponding to the emitted green color is transferred through the vertical charge transfer path corresponding to the first and second pixel groups. The charge corresponding to one of red or blue is read out from the pixels included in the second pixel column to the vertical charge transfer path corresponding to the first pixel group, and the second pixel group includes a second charge of the second pixel group. A charge corresponding to the other of red and blue is read from the pixels included in the pixel column to the vertical charge transfer path corresponding to the second pixel group, and then the red color of the read first pixel group is read. Alternatively, both the charge corresponding to one of blue and the charge corresponding to the other of red or blue of the second pixel group pass through the vertical charge transfer path from which they are read out to the horizontal charge transfer path. Transferring (g) said step (e) and The electric charge corresponding to green, the electric charge corresponding to one of red or blue, and the electric charge corresponding to the other of red or blue read in (f) are passed through the horizontal charge transfer path to the output amplifier. Transferring, amplifying by the output amplifier, and outputting to the outside A method for controlling a solid-state imaging device is provided.
[0039]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
[0040]
FIG. 1 is a plan view of a solid-state imaging device according to an embodiment of the present invention.
[0041]
The solid-state imaging device A includes a pixel portion B in which a plurality of pixels 3 are aligned on the semiconductor substrate 1, a vertical charge transfer path 5 that is disposed in the pixel portion B and transfers charges from the pixels 3 in the vertical direction, A horizontal charge transfer path 7 that is disposed below the pixel portion B and transfers the charges transferred from the vertical charge transfer path 5 in the horizontal direction, and an output amplifier section 17 that amplifies the charges transferred from the horizontal charge transfer path 7. including.
[0042]
In the pixel portion B, a plurality of pixels 3 are arranged in the horizontal direction (row direction) and the vertical direction (column direction) on the two-dimensional plane of the semiconductor substrate 1. One pixel and a pixel adjacent to the one pixel are arranged so as to be shifted by ½ pitch in the vertical direction. This is a so-called pixel-shifted solid-state imaging device.
[0043]
Each pixel has a substantially square shape. The pixels are arranged so that the diagonal lines of the square are aligned in the vertical direction and the horizontal direction.
[0044]
Pixels arranged in the vertical direction are referred to as pixel columns.
[0045]
A plurality of green pixels 3a, 3a, 3a are aligned in the vertical direction to form a first pixel column P1a. A plurality of pixels adjacent to the first pixel column P1a in the horizontal direction and aligned in the vertical direction form the second pixel column P2a. In the pixels forming the second pixel column P2a, blue pixels 3b and red pixels 3c are alternately arranged in the vertical direction.
[0046]
A set of pixel groups PG1 is formed by the first pixel column P1a and the second pixel column P2a adjacent thereto in the horizontal direction. A plurality of pixel groups PG1, PG2, PG3,... Are arranged adjacent to each other in the horizontal direction to form a pixel portion B as a whole.
[0047]
In FIG. 1, only two pixel groups PG1 and PG2 are shown for simplicity, but a large number of pixel groups are actually formed.
[0048]
For example, a vertical charge transfer path made of an n-type semiconductor layer in the semiconductor substrate 1 along a gap formed between the first pixel column P1a and the second pixel column P2a included in the first pixel group PG1. 5 (indicated by a thick solid line in FIG. 1) is provided in a meandering shape or a zigzag shape. The vertical charge transfer path 5 is not formed between the pixel groups PG. That is, no vertical charge transfer path is formed between the pixel group PG1 and the pixel group PG2 adjacent in the horizontal direction.
[0049]
Pixels arranged in the horizontal direction are referred to as pixel rows.
[0050]
In FIG. 1, a vertical charge transfer electrode, for example, a vertical charge transfer electrode 11-1 (indicated by a dotted line) meanders along two oblique sides below the first pixel row Q1 including the green pixels 3a and 3a. Or a zigzag shape that extends horizontally.
[0051]
Vertical charge transfer so that the blue pixels 3b and the red pixels 3c arranged in the horizontal direction are along the two hypotenuses below the second pixel row Q2 arranged alternately in the horizontal direction. The electrode 11-2 (indicated by a thin solid line) extends in the horizontal direction in a meandering or zigzag shape.
[0052]
Eight vertical charge transfer electrodes 11-1 to 11-8 form a set of electrode groups EG. Although only one electrode group is shown in FIG. 1, a large number of electrode groups EG, EG, EG are actually formed in the pixel portion B.
[0053]
An independent voltage waveform from V8 to V1 can be applied to the eight vertical charge transfer electrodes 11-1 to 11-8 by using a drive circuit.
[0054]
Between the vertical charge transfer electrode 11-8 at the final stage on the horizontal charge transfer path 7 side of the vertical charge transfer electrode 11 and the horizontal charge transfer path 7, two transfer electrodes extending in the horizontal direction and adjacent in the vertical direction are provided. Va and Vb are formed. Charges are transferred from the vertical charge transfer path 5 to the horizontal charge transfer path 7 by the two transfer electrodes Va and Vb.
[0055]
The transfer electrodes Va and Vb are arbitrarily provided. The number of transfer electrodes is not limited to two.
[0056]
A horizontal charge transfer path 7 is formed at one end of the vertical charge transfer path 5. A plurality of horizontal charge transfer electrodes 15 in which 1 poly and 2 poly are alternately arranged are formed on the horizontal charge transfer path 7. The horizontal charge transfer electrode 15-0 and the horizontal charge transfer electrode 15-1 are connected in common and a voltage φ1 is applied. The horizontal charge transfer electrode 15-2 and the horizontal charge transfer electrode 15-3 are connected in common and a voltage φ2 is applied. The horizontal charge transfer electrode 15-4 and the horizontal charge transfer electrode 15-5 are connected in common, and the voltage φ1 is applied.
[0057]
Between two vertical charge transfer paths 5 adjacent in the horizontal direction, there are four horizontal charge transfer electrodes 15 (for example, in FIG. 1, reference numerals 15-1, 15-2, 15-3, 15-4). Lined up).
[0058]
Pixel row P1a is from above G (green) GGGG Pixels are arranged in the vertical direction. Pixel row P2a is B (blue) R (red) BRBR Pixels are arranged in the vertical direction.
[0059]
Pixel row P1b is from above GGGGG ... Pixels having a color arrangement are arranged in the vertical direction. Pixel column P2b is RBRBRB ... Pixels having the color arrangement are arranged in the vertical direction.
[0060]
The color arrangement illustrated in FIG. 1 is a color arrangement called a G stripe RB complete checkered pattern.
[0061]
In the illustrated configuration, each pixel has a substantially rhombus shape having four hypotenuses.
[0062]
It can also be considered that the pixels of the second pixel column P2 are arranged in the gaps of the matrix formed by the pixels 3c, 3b, 3c... Of the first pixel column P1.
[0063]
On the other hand, if the drawing is tilted 45 degrees, it can be considered that the pixels of the first and second pixel columns cooperate to form a substantially square matrix.
[0064]
FIG. 2 shows a main part of FIG. FIG. Is It is sectional drawing.
[0075]
Figure 2 As shown, a deep p-well 43 is formed in the semiconductor substrate 1 and a photodiode 41 is formed. b The vertical charge transfer path 31a, the transfer gate 45, and the isolation region 47 are formed in the p well 43.
[0076]
A vertical charge transfer electrode 11-5 is formed on a region where the vertical charge transfer path 31a is formed.
[0077]
A color filter CF is formed on the semiconductor substrate 1 via the planarizing film H.
[0078]
On the color filter CF, for example, a microlens ML formed of a photoresist is provided. Light is collected on the surface of the photodiode 41 by the microlens ML.
[0079]
A method for controlling the solid-state imaging device A will be described below with reference to FIGS.
[0080]
With reference to the timing charts of FIGS. 3 to 6, an operation in the case of reading all pixels after taking a still image will be described.
[0081]
As shown in FIG. 3, a high pulse voltage is applied as a read voltage to the vertical charge transfer electrode 11-7 (V2) and the vertical charge transfer electrode 11-3 (V6). The read pulse voltage is 15 V, for example. Charges corresponding to the green color from the photodiodes 3a and 3a (hereinafter referred to as "G charges") in the vertical charge transfer path 5 below the vertical charge transfer electrode 11-7 and the vertical charge transfer path 5 below the vertical charge transfer electrode 11-3. .) Is read out. In the timing chart, the G charge is represented by a black circle.
[0082]
The G charge accumulated in the vertical charge transfer path 5 below the vertical charge transfer electrode 11-7 (V2) is relative to the vertical charge transfer electrode 11-8 (V1), the first transfer electrode Va, and the second transfer electrode Vb. Then, the voltage is transferred toward the horizontal charge transfer path 7 by sequentially applying a high voltage (about 8V).
[0083]
The G charge accumulated in the vertical charge transfer path 5 below the vertical charge transfer electrode 11-3 (V6) is first from the vertical charge transfer electrode 11-4 (V5) to the vertical charge transfer electrode 11-8 (V1). By sequentially applying a High (about 8 V) voltage to the transfer electrode Va and the second transfer electrode Vb, the voltage is transferred in the vertical charge transfer path 5 toward the horizontal charge transfer path 7.
[0084]
The G charges transferred from the vertical charge transfer path 5 to the horizontal charge transfer path 7 are transferred along the horizontal charge transfer path 7 toward the output amplifier 17 by the two-phase driving method. The G signal amplified by the output amplifier 17 is stored in an external circuit.
[0085]
Next, the remaining G charge is read out.
[0086]
As shown in FIG. 4, a high voltage is applied as a read voltage to the vertical charge transfer electrode 11-5 (V4) and the vertical charge transfer electrode 11-1 (V8). The remaining G charge is read out to the vertical charge transfer path 5.
[0087]
Thereafter, the G charge is transferred to the horizontal charge transfer path 7 by an operation similar to the operation described in FIG.
[0088]
The G charges transferred to the horizontal charge transfer path 7 are transferred toward the output amplifier 17 in the horizontal charge transfer path 7 by the two-phase driving method. The G signal amplified by the output amplifier 17 is stored in an external circuit.
[0089]
Regarding the readout of the G charge, the same operation is performed in all the pixel groups PG (PG1 and PG2 in FIG. 1) in the horizontal direction.
[0090]
Read B charge and R charge.
[0091]
As shown in FIG. 5, the vertical charge transfer electrode 11-8 (V1) and the vertical charge transfer electrode 11- 4 A high voltage is applied as a read voltage to (V5). The R charge (black square mark) is read out to the vertical charge transfer path 5a, and the B charge (hatched square mark) is read out to the vertical charge transfer path 5b.
[0092]
Thereafter, similarly to the operation described with reference to FIG. 3, the R charge and the B charge are read out to the external circuit.
[0093]
As shown in FIG. 6, a high voltage is applied as a read voltage to the vertical charge transfer electrode 11-6 (V3) and the vertical charge transfer electrode 11-2 (V7). B charge is read out to the vertical charge transfer path 5a, and R charge is read out to the vertical charge transfer path 5b.
[0094]
The B charge and the R charge are read out to the external circuit by the same operation as the above operation.
Through the above operation, all pixel readout is possible. Still images can be reproduced clearly.
[0095]
When a readout pulse is applied to the vertical charge transfer electrode to read a signal from the pixel, the vertical charge transfer electrode 11 to which the readout pulse is applied simultaneously is separated into four electrodes in the vertical direction. In addition, at the time of signal readout, only the same color pixel signal is read out to the same single vertical charge transfer path 5.
[0096]
Therefore, mixing (color mixing) of transfer charges that occurs when different color signals are present in the same vertical charge transfer path during reading is prevented. Since the transfer charge is prevented from being mixed, the solid-state imaging device according to the present embodiment is unlikely to deteriorate when reproducing a still image.
[0097]
A method for reading an image signal in a video mode for reproducing a moving image such as a monitor image of a digital camera will be described with reference to FIGS.
[0098]
In the video mode, without reading from all the pixels, only the charges of the pixels included in a specific row from the second row to the seventh row in the set of pixel columns Q in eight rows are read.
[0099]
From FIG. 7 to FIG. 9, the readout voltage is applied only to V1 (electrode 11-8) and V8 (electrode 11-1), V4 (electrode 11-5) and V5 (electrode 11-4), and thinning readout is performed. Shows how to do.
[0100]
As shown in FIG. 7, a high positive voltage, for example, 15V read pulse is applied to V8 in a state where a positive voltage, for example, 8V is applied to V8.
[0101]
The G signal is read out to the vertical charge transfer path 5a included in the pixel group PG1. By applying a positive voltage in order from V8 (electrode 11-1) to V4 (electrode 11-5), the G signal charge is transferred. Charges corresponding to the G signal are accumulated in the vertical charge transfer path 5a under the electrode 11-5.
[0102]
In this state, that is, in the state where a positive voltage, for example, 8V is applied to V4, a high positive voltage, for example, 15V read pulse is applied to V4.
[0103]
In the vertical charge transfer path 5a included in the pixel group PG1, G Are read out. Charge corresponding to the G signal is added and accumulated in the vertical charge transfer path 5 below the electrode 11-5 (signal GG).
[0104]
By applying a positive voltage sequentially from V4 (electrode 11-5) to V1 (electrode 11-8), the signal charge corresponding to the GG signal is transferred.
[0105]
The GG signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrode 12.
[0106]
With a positive voltage applied to V1, for example, 8V, a high positive voltage, for example, 15V read pulse is applied to V1.
[0107]
The R signal is read out to the vertical charge transfer path 5a included in the pixel group PG1. By applying a positive voltage in order from V1 (electrode 10-8) to V5 (electrode 11-4), the R signal charge is transferred. Charge corresponding to the R signal is accumulated in the vertical charge transfer path 5 below the electrode 11-4.
[0108]
In this state, that is, a positive voltage such as 8V is applied to V5, a high positive voltage such as 15V is applied to V5.
[0109]
The R signal is read out to the vertical charge transfer path 5a included in the pixel group PG1. Charges corresponding to the R signal are added and accumulated in the vertical charge transfer path 5 below the electrode 11-4 (signal RR).
[0110]
V 5 (Electrode 11- 4 ) To V1 (electrode 11-8) in order, a signal charge corresponding to the RR signal is transferred.
[0111]
The RR signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrode 12.
[0112]
FIG. 8 shows a method of reading charges from the pixels included in the pixel group PG2.
[0113]
With a positive voltage applied to V1, for example, 8V, a high positive voltage, for example, 15V read pulse is applied to V1.
[0114]
The B signal is read out to the vertical charge transfer path 5b included in the pixel group PG2. By applying a positive voltage sequentially from V1 (electrode 10-8) to V5 (electrode 11-4), the B signal charge is transferred. Electrode 11- 4 Charges corresponding to the B signal are accumulated in the lower vertical charge transfer path 5b.
[0115]
In this state, that is, a positive voltage such as 8V is applied to V5, a high positive voltage such as 15V is applied to V5.
[0116]
The B signal is read out to the vertical charge transfer path 5b included in the pixel group PG2. Charges corresponding to the B signal are added and accumulated in the vertical charge transfer path 5b below the electrode 11-4 (signal BB).
[0117]
By applying a positive voltage in order from V5 (electrode 11-4) to V1 (electrode 11-8), signal charges corresponding to the BB signal are transferred.
[0118]
The BB signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrode 12.
[0119]
With a positive voltage applied to V8, for example, 8V, a high positive voltage, for example, 15V read pulse is applied to V8.
[0120]
The G signal is read out to the vertical charge transfer path 5b included in the pixel group PG2. By applying a positive voltage in order from V8 (electrode 11-1) to V4 (electrode 11-5), the G signal charge is transferred. Charge corresponding to the G signal is accumulated in the vertical charge transfer path 5 below the electrode 11-5.
[0121]
In this state, that is, in the state where a positive voltage, for example, 8V is applied to V4, a high positive voltage, for example, 15V read pulse is applied to V4.
[0122]
The G signal is read out to the vertical charge transfer path 5b included in the pixel group PG2. Charge corresponding to the G signal is added and accumulated in the vertical charge transfer path 5 below the electrode 11-5 (signal GG).
[0123]
V4 (electrode 11− 5 ) To V1 (electrode 11-8) in order, a signal charge corresponding to the GG signal is transferred.
[0124]
The GG signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrode 12.
[0125]
FIG. 9 shows the color arrangement of charges read from the photodiode to the vertical charge transfer path 5a and the vertical charge transfer path 5b by the above-described reading method.
[0126]
The RR charge obtained by adding the R charge is accumulated under the V1 electrode of the vertical charge transfer path 5a. The GG charge added with the G charge is accumulated under the V4 electrode of the vertical charge transfer path 5a.
[0127]
The BB charge obtained by adding the B charge is accumulated under the V1 electrode of the vertical charge transfer path 5b. The GG charge added with the G charge is accumulated under the V4 electrode of the vertical charge transfer path 5b.
[0128]
Similar charges are accumulated in the vertical charge transfer paths 5a and 5b, respectively.
[0129]
In the above-described solid-state imaging device, as described with reference to FIGS. 7 to 9, moving images can be quickly displayed by performing pixel thinning readout.
[0130]
In addition, by adding signals of the same color, the sensitivity of the image is improved and a clear image can be obtained.
[0131]
From FIG. 10 to FIG. 13, the read voltage is applied only to V2 (electrode 11-7) and V3 (electrode 11-6), V6 (electrode 11-3) and V7 (electrode 11-2), and thinning-out reading is performed. Shows how to do.
[0132]
As shown in FIG. 10, a high positive voltage, for example, 15V read pulse is applied to V2 while a positive voltage, for example, 8V, is applied to V2.
[0133]
The G signal is read out to the vertical charge transfer path 5a. The signal charge of G is transferred by applying a positive voltage in order from V2 (electrode 10-7) to V6 (electrode 11-3). Charges corresponding to the G signal are accumulated in the vertical charge transfer path 5a under the electrode 11-3.
[0134]
In this state, that is, a positive voltage such as 8V is applied to V6, a high positive voltage such as 15V is applied to V6.
[0135]
The G signal is read out to the vertical charge transfer path 5a. Charges corresponding to the G signal are added and accumulated in the vertical charge transfer path 5a below the electrode 11-3 (signal GG).
[0136]
By applying a positive voltage in order from V6 (electrode 11-3) to V1 (electrode 11-8), signal charges corresponding to the GG signal are transferred.
[0137]
A GG signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrodes Va and Vb.
[0138]
A high positive voltage, for example, 15V read pulse is applied to V7 in a state where a positive voltage, for example, 8V is applied to V7.
[0139]
The B signal is read out to the vertical charge transfer path 5a. V7 (electrode 11- 2 ) To V3 (electrode 11-6) in order, the B signal charge is transferred. Charges corresponding to the B signal are accumulated in the vertical charge transfer path 5a under the electrode 11-6.
[0140]
In this state, that is, in the state where a positive voltage, for example, 8V is applied to V3, a high positive voltage, for example, a 15V read pulse is applied to V3.
[0141]
The B signal is read out to the vertical charge transfer path 5a. A charge corresponding to the B signal is added and accumulated in the vertical charge transfer path 5a under the electrode 11-6. Charges corresponding to the B signal are added and accumulated in the vertical charge transfer path 5a (signal BB).
[0142]
By applying a positive voltage sequentially from V3 (electrode 11-6) to V1 (electrode 11-8), the signal charge corresponding to the BB signal is transferred.
[0143]
The BB signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrodes Va and Vb.
[0144]
FIG. 11 shows the readout operation of the pixels in the second field.
[0145]
In the state where a positive voltage, for example, 8V, is applied to V2, a high positive voltage, for example, a 15V readout pulse is applied to V2.
[0146]
The G signal is read out to the vertical charge transfer path 5b included in the pixel group PG2. V2 (electrode 1 1 − 7 ) To V6 (electrode 11-3) in order, a positive voltage is applied in order to transfer the G signal charge. Charge corresponding to the G signal is accumulated in the vertical charge transfer path 5b below the electrode 11-3.
[0147]
In this state, that is, a positive voltage such as 8V is applied to V6, a high positive voltage such as 15V is applied to V6.
[0148]
Further, a G signal is read out to the vertical charge transfer path 5b. Charges corresponding to the G signal are added and accumulated in the vertical charge transfer path 5b below the electrode 11-3 (signal GG).
[0149]
V 6 By applying a positive voltage sequentially from (electrode 11-3) to V1 (electrode 11-8), the signal charge corresponding to the GG signal is transferred.
[0150]
The GG signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrode 12.
[0151]
A high positive voltage, for example, 15V read pulse is applied to V7 in a state where a positive voltage, for example, 8V is applied to V7.
[0152]
The R signal is read out to the vertical charge transfer path 5b. By applying a positive voltage sequentially from V7 (electrode 11-2) to V3 (electrode 11-6), the signal charge of R is transferred. Charges corresponding to the R signal are accumulated in the vertical charge transfer path 5b under the electrode 11-6.
[0153]
In this state, that is, in the state where a positive voltage, for example, 8V is applied to V3, a high positive voltage, for example, a 15V read pulse is applied to V3.
[0154]
Further, an R signal is read out to the vertical charge transfer path 5b. Charges corresponding to the R signal are added and accumulated in the vertical charge transfer path 5b below the electrode 11-6 (signal RR).
[0155]
By applying a positive voltage sequentially from V3 (electrode 11-6) to V1 (electrode 11-8), signal charges corresponding to the RR signal are transferred.
[0156]
The RR signal is transferred to the horizontal charge transfer path 7 by applying a positive voltage to the electrode 12.
[0157]
FIG. 12 shows the color arrangement of charges read from the photodiodes to the vertical charge transfer path 5a and the vertical charge transfer path 5b by the above-described reading method.
[0158]
The BB charge obtained by adding the B charge is accumulated under the V3 electrode of the vertical charge transfer path 5a. The GG charge added with the G charge is accumulated under the V6 electrode of the vertical charge transfer path 5a.
[0159]
The RR charge obtained by adding the R charge is accumulated under the V3 electrode of the vertical charge transfer path 5b. The GG charge added with the G charge is accumulated under the V3 electrode of the vertical charge transfer path 5b.
[0160]
Similar charges are accumulated in the other vertical charge transfer paths 5a and 5b, respectively.
[0161]
In the above solid-state imaging device, as described with reference to FIGS. 10 to 11, moving images can be quickly displayed by performing pixel thinning readout.
[0162]
In addition, by adding signals of the same color, the sensitivity of the image is improved and a clear image can be obtained.
[0163]
In the above solid-state imaging method, GG / R B Although the case of the alternate filter array is shown, it is possible to read out signals from the pixels even with another color filter array.
[0164]
As a thinning-out reading method, a method of reading a signal by applying a read voltage to two vertically adjacent electrodes in a set of eight vertical charge transfer electrode groups has been described. It is also possible to apply a read voltage to.
[0165]
In the solid-state imaging device, signals of two adjacent pixel columns are read out to one shared vertical charge transfer path. The processing accuracy of the vertical charge transfer path can be relaxed. The size of the pixel, for example, the size of the photodiode can be relatively increased, and the amount of charge accumulated in the pixel can be increased. From another viewpoint, if the processing accuracy of the vertical charge transfer path is the same, the pixel size can be reduced.
[0166]
The number of horizontal charge transfer paths connected to the vertical charge transfer path may be ½ of the number of photodiodes included in the pixels arranged in the row direction. Therefore, the pitch of the horizontal charge transfer electrodes can be increased, and the horizontal charge transfer path can be processed with a low processing accuracy. The production yield of the solid-state imaging device can be improved.
[0167]
When the readout method according to this embodiment is used in the solid-state imaging device, all pixels of a still image can be read out. In addition, since it is easy to perform thinning readout, it is possible to easily read out and reproduce a monitor image for displaying a moving image.
[0168]
In the solid-state imaging device according to the present embodiment, the pixel shape has been described as a substantially square shape. The pixel shape may be a shape other than a square. For example, a rectangular or regular hexagonal pixel shape may be used.
[0169]
In addition, regarding the color arrangement of the pixels in the solid-state image sensor, it is sufficient if it has a configuration that enables color imaging. In addition to the three primary color (red (R), green (G), and blue (B)) color arrangements, there is a so-called complementary color arrangement.
[0170]
Complementary color filter arrays include, for example, (i) green (G), cyan (Cy) and yellow (Ye) color filters, (ii) cyan (Cy), yellow (Ye), and white or colorless (Iii) consisting of color filters of (W), (iii) consisting of color filters of cyan (Cy), magenta (Mg), yellow (Ye) and green (G), and (iv) cyan (Cy), yellow Known are (Ye), green (G), and white or colorless (W) color filters.
[0171]
As a color filter arrangement pattern in the primary color filter array, in addition to the G-strip RB perfect checkered pattern exemplified in the present embodiment, a color layout of Bayer type, interline type, G stripe RB checkered pattern, etc. Is used.
[0172]
It will be apparent to those skilled in the art that other various modifications, improvements, combinations, and the like are possible.
[0173]
【The invention's effect】
In the solid-state imaging device, the processing accuracy, particularly the processing accuracy of the vertical transfer path and the vertical transfer electrode can be relaxed. Further, the processing accuracy of the horizontal charge transfer path can be relaxed. With the same processing accuracy, it is possible to increase the density of pixels.
[0174]
The production yield can be improved. It is also possible to improve the reliability of the solid-state imaging device.
[0175]
According to the reading method of the solid-state imaging device, all pixels of a still image can be read. In addition, since it is easy to perform thinning readout, it is possible to easily read out and reproduce a monitor image for displaying a moving image.
[Brief description of the drawings]
FIG. 1 is a plan view of a solid-state imaging device according to an embodiment of the present invention.
FIGS. 2A and 2B are enlarged views of main parts of a pixel portion of the solid-state imaging device, in which FIG. 2A is a plan view and FIG. 2B is a cross-sectional view.
FIG. 3 is a timing chart showing an operation for reading a still image of the solid-state imaging device.
FIG. 4 is a timing chart showing a still image reading operation of the solid-state imaging device.
FIG. 5 is a timing chart showing a still image reading operation of the solid-state imaging device.
FIG. 6 is a timing chart showing a still image reading operation of the solid-state imaging device.
FIG. 7 is a timing chart showing a monitor image reading operation of the solid-state imaging device.
FIG. 8 is a timing chart showing a monitor image reading operation of the solid-state imaging device.
FIG. 9 is a diagram illustrating an arrangement of color signals in a vertical charge transfer path in the monitor image reading operation of the solid-state imaging device.
FIG. 10 is a timing chart showing a monitor image reading operation of the solid-state imaging device.
FIG. 11 is a timing chart showing a monitor image reading operation of the solid-state imaging device.
FIG. 12 is a diagram illustrating an arrangement of color signals in a vertical charge transfer path in the monitor image reading operation of the solid-state imaging device.
FIG. 13 is a plan view of a conventional solid-state imaging device, mainly showing a structure in a semiconductor region.
FIG. 14 is a plan view of a conventional solid-state imaging device, mainly showing the structure of a charge transfer electrode.
[Explanation of symbols]
A Solid-state image sensor
B Display section
EG vertical charge transfer electrode group
P1 first pixel column
P2 second pixel column
PG pixel array group
Q1 first pixel row
Q2 Second pixel row
V1 to V8 Applied voltage to vertical transfer electrode
φ1, φ2 Applied voltage to horizontal transfer electrode
1 Semiconductor substrate
3 pixels
3a pixel (green)
3b pixel (blue)
3c pixel (red)
11 Vertical charge transfer electrode
15 Horizontal charge transfer electrode
17 Output amplifier
41 Photodiode (photoelectric conversion element)
45 Transfer gate (readout gate)

Claims (4)

A plurality of pixel groups arranged on a two-dimensional plane, each pixel group including a first pixel column including a plurality of pixels arranged in a vertical direction at a first pixel pitch and the first pixels A second pixel column including a plurality of pixels aligned in a vertical direction with respect to the column and shifted by 1/2 pixel of the first pixel pitch, and the second pixel column is adjacent to the horizontal direction. A plurality of pixel groups arranged at a position half of the second pixel pitch between the first pixel columns of the pixel groups to be
A first separation region formed between a pair of pixel groups adjacent in the horizontal direction;
A vertical charge transfer path formed between the first pixel column and the second pixel column of each pixel group and extending in the vertical direction while meandering one by one, and belongs to the same pixel group A vertical charge transfer path from which both charges of pixels included in the first pixel column and the second pixel column are read out;
A first pixel row in which pixels included in the first pixel column are aligned in the horizontal direction, and a pixel adjacent to the first pixel row in the vertical direction, and a pixel included in the second pixel column in the horizontal direction A vertical charge transfer electrode formed in a horizontal direction while meandering one by one between the aligned second pixel rows and transferring charges in the vertical charge transfer path in the vertical direction; A first type of vertical charge transfer electrode to which a voltage for reading out charges from the pixels included in the first pixel row is applied to the vertical charge transfer path, and the vertical charge transfer path from the pixels included in the second pixel row. Vertical charge transfer electrodes alternately arranged in the vertical direction with a second type of vertical charge transfer electrodes to which a voltage for reading out charges is applied;
A drive circuit for independently applying a voltage to each vertical charge transfer electrode with respect to a set of every eight vertical charge transfer electrodes adjacent in the vertical direction among the vertical charge transfer electrodes;
A horizontal charge transfer path that is provided at the lower end of the plurality of vertical charge transfer paths, receives charges transferred from the vertical charge transfer paths, and transfers them in the horizontal direction;
A horizontal charge transfer electrode for transferring charges in the horizontal charge transfer path;
An output amplifier that is formed at one end of the horizontal charge transfer path and amplifies the charge from the horizontal charge transfer path and reads it out,
The pixel included in the first pixel column is a green pixel including a photoelectric conversion element and a green filter, and the pixel included in the second pixel column is a red pixel including a photoelectric conversion element and a red filter. Solid-state imaging device in which blue pixels including conversion elements and blue filters are alternately arranged in the vertical direction, and red pixels and blue pixels included in the plurality of second pixel columns are alternately arranged in the horizontal direction Read method,
(A ) A voltage for reading out charges is applied to the first type vertical charge transfer electrodes every other vertical charge transfer electrode of the first type in the vertical direction from the first pixel column in the column direction. For every other pixel, the charge corresponding to green is read out to the vertical charge transfer path, and then the read charge corresponding to green is passed through the vertical charge transfer path and the horizontal charge transfer path to the output amplifier. And amplifying by the output amplifier and outputting to the outside,
(B) Applying a voltage for reading out charges to the remaining first type vertical charge transfer electrodes to which no voltage for reading out charges in the step (a) was applied, and the step of the first pixel column The charge corresponding to green is read out to the vertical charge transfer path from the remaining pixels from which charges have not been read out in (a), and then the charge corresponding to the read green color is transferred to the vertical charge transfer path and the horizontal charge transfer path. Transferring to the output amplifier through a path, amplifying by the output amplifier and outputting to the outside;
(C) A voltage for reading out charges is applied to the second type vertical charge transfer electrodes in the vertical direction every other vertical type charge transfer electrode of the second type, so that the second pixel column For every other pixel, the charge corresponding to one of red or blue is read out to the vertical charge transfer path, and then the charge corresponding to one of the read red or blue is read out from the vertical charge transfer path and the horizontal charge. Transferring to the output amplifier through a transfer path, amplifying by the output amplifier and outputting to the outside;
(D) Applying a voltage for reading out charges to the remaining second type vertical charge transfer electrodes to which no voltage for reading out charges in the step (c) was applied, and the step of the second pixel column The charge corresponding to the other of red or blue is read from the remaining pixels from which the charge has not been read in (c) to the vertical charge transfer path, and then the charge corresponding to the other of the read red or blue is transferred to the vertical charge transfer path. A control method for a solid-state imaging device, including a step of transferring to the output amplifier through a charge transfer path and the horizontal charge transfer path, amplifying by the output amplifier, and outputting to the outside . A plurality of pixel groups arranged on a two-dimensional plane, each pixel group including a first pixel column including a plurality of pixels arranged in a vertical direction at a first pixel pitch and the first pixels A second pixel column including a plurality of pixels aligned in a vertical direction with respect to the column and shifted by 1/2 pixel of the first pixel pitch, and the second pixel column is adjacent to the horizontal direction. A plurality of pixel groups arranged at a position half of the second pixel pitch between the first pixel columns of the pixel groups to be
A first separation region formed between a pair of pixel groups adjacent in the horizontal direction;
A vertical charge transfer path formed between the first pixel column and the second pixel column of each pixel group and extending in the vertical direction while meandering one by one, and belongs to the same pixel group A vertical charge transfer path from which both charges of pixels included in the first pixel column and the second pixel column are read out;
A first pixel row in which pixels included in the first pixel column are aligned in the horizontal direction, and a pixel adjacent to the first pixel row in the vertical direction, and a pixel included in the second pixel column in the horizontal direction A vertical charge transfer electrode formed in a horizontal direction while meandering one by one between the aligned second pixel rows and transferring charges in the vertical charge transfer path in the vertical direction; A first type of vertical charge transfer electrode to which a voltage for reading out charges from the pixels included in the first pixel row is applied to the vertical charge transfer path, and the vertical charge transfer path from the pixels included in the second pixel row. Vertical charge transfer electrodes alternately arranged in the vertical direction with a second type of vertical charge transfer electrodes to which a voltage for reading out charges is applied;
A drive circuit for independently applying a voltage to each vertical charge transfer electrode with respect to a set of every eight vertical charge transfer electrodes adjacent in the vertical direction among the vertical charge transfer electrodes;
A horizontal charge transfer path that is provided at the lower end of the plurality of vertical charge transfer paths, receives charges transferred from the vertical charge transfer paths, and transfers them in the horizontal direction;
A horizontal charge transfer electrode for transferring charges in the horizontal charge transfer path;
An output amplifier that is formed at one end of the horizontal charge transfer path and amplifies the charge from the horizontal charge transfer path and reads it out,
The pixel included in the first pixel column is a green pixel including a photoelectric conversion element and a green filter, and the pixel included in the second pixel column is a red pixel including a photoelectric conversion element and a red filter. Solid-state imaging device in which blue pixels including conversion elements and blue filters are alternately arranged in the vertical direction, and red pixels and blue pixels included in the plurality of second pixel columns are alternately arranged in the horizontal direction A thinning-out reading method,
(E) A voltage for reading out charges is applied to one of the first type of vertical charge transfer electrodes among the set of every eight vertical charge transfer electrodes, so that the first pixel of the first pixel group The charge corresponding to green is read from the pixels included in the column to the vertical charge transfer path corresponding to the first pixel group, and the second pixel group adjacent to the first pixel group in the horizontal direction is read out. A charge corresponding to green is read from the pixels included in one pixel column to the vertical charge transfer path corresponding to the second pixel group, and then the read first pixel group and second read Transferring both of the charges corresponding to the green color of the pixel group to the horizontal charge transfer path through the vertical charge transfer path from which each was read;
(F) Out of the set of every eight vertical charge transfer electrodes, one of the second type vertical charge transfer electrodes has a charge corresponding to the green color read in the step (e). From a pixel included in the second pixel column of the first pixel group, a voltage for reading out charges is applied during a period in which the vertical charge transfer paths corresponding to the first and second pixel groups are transferred. A charge corresponding to one of red or blue is read out to a vertical charge transfer path corresponding to the first pixel group, and the second pixel column includes a second pixel column. A charge corresponding to the other of red or blue is read out to the vertical charge transfer path corresponding to the pixel group, and then the charge corresponding to one of red or blue of the read first pixel group and Both of the charges corresponding to the other of red or blue in the two pixel groups, Respectively passes through the vertical charge transfer paths read out, a step of transferring to the horizontal charge transfer path,
(G) The charges corresponding to green, the charge corresponding to one of red or blue, and the charge corresponding to the other of red or blue, read in the steps (e) and (f), are converted into the horizontal charge. A method of controlling the solid-state imaging device, comprising : transferring to the output amplifier through a transfer path, amplifying by the output amplifier, and outputting to the outside . Further, (h) each charge read from the pixel in the steps (e) and (f) is transferred through the vertical charge transfer path to a position corresponding to the same color pixel from which the charge corresponding to the same color can be read. At this time, a voltage for reading out charges is applied to the vertical charge transfer electrode for reading out charges from the same color pixels, and the charges read from the same color pixels are converted into the charges read from the pixels in the steps (e) and (f). The method for controlling a solid-state imaging device according to claim 2, comprising a step of adding. The same color pixel from which charges are read in the step (h) includes two pixels on the horizontal charge transfer path side in the pixel column including the pixels from the pixels from which charges are read in the steps (e) and (f). The method for controlling a solid-state imaging device according to claim 3, wherein the method is a pixel.

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