JP2001036217A - Manufacture of wiring board and etching device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing wiring board by which metal lic layers, etc., exposed on the upper and lower surfaces of a wiring board can be etched efficiently in such a state that the occurrence of failures due to foreign matters is reduced and the variation of etching rates between the upper and lower metallic layers can be reduced and, in addition, the etching rates can be made nearly equal to each other. SOLUTION: In a method for manufacturing wiring board, a substrate 10 having metallic layers 3 and 4 respectively exposed on its upper and lower surfaces is transported in a state where the substrate 10 is held between an upper roll group 35 and a lower roll group 36, both of which are respective equipped with a plurality of transportation disks 31. At the same time, the exposed sections 3C and 4C of the metallic layers 3 and 4 are simultaneously etched off by jetting an etchant 40 upon the substrate 10 from top sprays 37 and bottom sprays 38. In this process, the density of the disks 31 of the upper roll group 35 is made lower than that of the disks 31 of the lower roll group 37 and, at the same time, the jetting pressures of the etchant 40 from the bottom sprays 38 are made higher than those of the etchant 40 from the top sprays 37.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a wiring board including a step of etching a metal layer or a resin insulating layer exposed on the upper and lower surfaces of a substrate, and an etching apparatus used for the method. The present invention relates to a method for manufacturing a wiring board including a step of injecting an etchant from below to etch a metal layer or a resin insulating layer, and an etching apparatus used for the method.

[0002]

2. Description of the Related Art Conventionally, in manufacturing a wiring board, etching has been performed in various steps. For example, in order to form a wiring layer, the metal layers exposed on the upper surface side and the lower surface side of the substrate are removed by etching, or
In order to improve the adhesive strength with the resin insulating layer to be laminated, the surface of the wiring layer formed on the upper and lower surfaces of the substrate may be roughened by etching. Further, in order to improve the adhesion strength with the wiring layer to be formed, the surface of the resin insulating layer laminated on the upper and lower surfaces of the substrate may be roughened by etching.

[0003] Of these, the formation of the wiring layer is specifically performed, for example, as follows. That is, first, a laminated substrate having a metal layer is prepared on both surfaces of the core substrate and on the inner peripheral surfaces of a large number of holes formed in the core substrate. Then, an etching resist layer is formed on substantially the entire upper and lower surfaces of the substrate to be laminated, and is further exposed and developed to be patterned. Next, all exposed portions of the metal layer exposed from the patterned etching resist layer are etched away. After that, if the etching resist layer is peeled off, wiring layers are formed on both surfaces of the core substrate.

[0006] Here, as shown in FIG. 16, the exposed portion of the metal layer is removed by rotating a substrate 51 having a patterned etching resist layer formed thereon by rotating a roll 72 having a large number of transport disks 71. The lower roll group 74 is disposed so as to be rotatable, and the upper roll group 73 is disposed above the lower roll group 74 so as to be rotatable. A plurality of upper sprays 76 and a plurality of lower sprays 77 are provided above the upper roll group 73 and below the lower roll group 74, respectively. It is sprayed onto an exposed portion (not shown) of the metal layer on the side, and both sides are simultaneously etched and removed. FIG. 16A is a view of the etching apparatus 70 and the substrate 51 as viewed from the side, and FIG. 16B is a view of these as viewed from above.

[0005]

However, when the transport disk 71 comes into contact with the substrate 51, the edge of the substrate 51 is chipped or a part of the etching resist layer is peeled off, and the fragments become foreign matter. May adhere to the substrate 51. On the lower surface 51B side of the substrate 51, the transfer disk 7
Even if chips (foreign matter) chipped or peeled off due to 1 adhere, the etching solution 7 sprayed from the lower spray 77
9, the old etching solution 79 tends to stay on the upper surface 51A side, and foreign matter easily stays on the upper surface 51A during the etching process. For this reason,
In particular, problems such as insufficient etching removal on the upper surface 51A are likely to occur.

Further, the number of the transport disks 71 is large (the density per unit area is high) because the injected etchant 79 hinders the exposed portions of the metal layer from hitting the exposed portions.
Then, the etching rate becomes slow. Therefore, it is preferable to reduce the number of transport disks 71 on both the upper and lower sides (lower the density per unit area). However, the lower transport disk 71 cannot be reduced in consideration of the transportability of the substrate 51. On the other hand, the upper transport disk 71 is sufficient if the substrate 51 is not lifted upward.
The number can be reduced. However, if the density of the transfer disk 71 is different between the upper side and the lower side, the way of contacting the etchant between the upper surface 51A and the lower surface 51B of the substrate 51 changes, and the etching rate is different. There is a difference in the method, which is not preferable. A similar problem occurs when etching is performed for the purpose of surface roughening, such as roughening the surface of the wiring layer by etching or roughening the surface of the resin insulating layer.

[0007] The present invention has been made in view of the above situation, when etching a metal layer or a resin insulating layer at least partially exposed on the upper surface side and the lower surface side of the substrate, there are few problems due to foreign matter, It is an object of the present invention to provide a method of manufacturing a wiring board capable of reducing the variation in the etching rate between the upper and lower portions of the substrate, making the etching rate substantially equal, and performing efficient etching, and an etching apparatus used therefor.

[0008]

Means for Solving the Problems, Action and Effect The solution is to provide a substrate having a metal layer at least partially exposed on an upper surface side and a lower surface side, respectively, and a lower roll having a plurality of transport disks. A lower roll group rotatably arranged and an upper roll group comprising a plurality of the transport disks above the lower roll group are sandwiched by upper roll groups each rotatably arranged, and are horizontally held. A method for manufacturing a wiring board, comprising: an etching step of spraying an etchant from an upper upper spray and a lower spray onto the substrate to be conveyed, from an upper upper spray and a lower lower spray, respectively, thereby etching an exposed portion of the metal layer. ,
The density per unit area in the horizontal direction of the transport disk belonging to the upper roll group forms an area smaller than the density of the transport disk belonging to the lower roll group, and at least the area is sprayed from the upper spray. A method for manufacturing a wiring board, characterized in that the pressure of an etching solution sprayed from the lower spray is higher than the pressure of an etching solution to be sprayed.

In order to improve the transportability of the substrate, the lower roll group often depends on the transport disk, so that the density per unit area of the transport disks belonging to the lower roll group is maintained at a certain value. There is a need. On the other hand, the upper roll group only needs to prevent the substrate from being lifted when the etching liquid is sprayed, so that the density per unit area of the transport disk can be reduced. For this reason, the foreign matter that has been chipped or peeled off from the substrate due to the transport disk remains on the substrate, and the occurrence of etching problems is reduced. Further, by lowering the density of the carrier disk, the etching liquid is more likely to directly hit the exposed metal layer, so that the etching is facilitated and the etching rate of the upper surface of the substrate is increased.

Further, according to the present invention, in a region where the density of the transfer disk of the upper roll group is smaller than the density of the corresponding transfer disk of the lower roll group, the pressure for jetting the etching liquid from the lower spray is changed from the upper spray to the lower spray. The pressure is higher than the pressure at which the etchant is sprayed. For this reason, the metal layer exposed on the lower surface side of the substrate is more likely to be disturbed by the transport disk than the metal layer exposed on the upper surface side, and the etching rate on the lower surface side can be increased despite the fact that it is difficult to etch. . Further, it can be adjusted so as to be substantially equal to the etching rate on the upper surface side.
Therefore, it is possible to reduce the problem of etching due to foreign matter, and furthermore, even if the etching time is shortened by increasing the transfer speed of the entire substrate, there is little difference in the etching state between the upper and lower metal layers, and the yield is high. Wiring boards can be manufactured. It is considered that when the pressure sprayed from the lower spray is increased, a large amount of the etching liquid is supplied to the lower surface of the substrate, and the pressure facilitates the etching, so that the etching speed on the lower surface is increased as a whole.

Here, the case where the metal layer is etched according to the present invention is a method for manufacturing a wiring substrate as described above, wherein a substrate having an exposed portion on the upper surface side and the lower surface side with a part of the metal layer exposed is used. In some cases, an etching removal step of etching and removing the exposed portion is provided. That is,
For example, a substrate having a predetermined pattern of an etching resist layer on a metal layer formed on substantially the entire upper and lower surfaces is used. Then, all of the exposed portions of the metal layer exposed from the etching resist layer to the upper surface side and the lower surface side are removed by etching to form a wiring layer having a predetermined pattern.

Further, another method of etching a metal layer according to the present invention is a method of manufacturing a wiring board according to the above method, wherein a part of the metal layer exposed on the upper surface side and the lower surface side is more than another part. There is also a case where a substrate having a thin thin portion is used, and an etching removing step of etching and removing the thin portion is provided. That is, for example, a substrate is used in which a metal layer is exposed on substantially the entire upper and lower surfaces thereof, and a predetermined portion of the metal layer is a thinner portion than other portions. Then, of the metal layer exposed on the upper surface side and the lower surface side of the substrate, the entire thin portion is removed by etching to form a wiring layer of a predetermined pattern.

[0013] In another case of etching a metal layer according to the present invention, the method of manufacturing a wiring board according to the present invention, wherein the metal layer of the metal layer at least partially exposed on the upper surface side and the lower surface side is used. In the vicinity of the surface of the exposed portion. In this case, as the etching solution, for example, a solution containing a second copper complex and an organic acid such as formic acid may be used to roughen the Cu layer.

The transport disks belonging to the upper roll group and the lower roll group do not need to be arranged at equal intervals in the horizontal direction in each roll group. Therefore, the arrangement may be such that a high density portion or a low density portion per unit area exists. In the case of such non-uniformity, the upper roll group and the lower roll group in the area may be compared in density per unit area in the horizontal direction, and the present invention may be applied.

Another solution is to provide a substrate having a resin insulating layer on the upper surface and a lower surface, a lower roll group in which a lower roll having a plurality of transport disks is rotatably arranged, and a lower roll group comprising the lower roll group. An upper roll provided with a plurality of the transport disks above the side roll group is sandwiched between upper roll groups each rotatably arranged, and is transported in the horizontal direction. A method for manufacturing a wiring board, comprising: an etching step of spraying an etchant from a spray and a lower spray below to etch and roughen the resin insulating layer,
The density per unit area in the horizontal direction of the transport disk belonging to the upper roll group forms an area smaller than the density of the transport disk belonging to the lower roll group, and at least the area is sprayed from the upper spray. A method for manufacturing a wiring board, characterized in that the pressure of an etching solution sprayed from the lower spray is higher than the pressure of an etching solution to be sprayed.

According to the present invention, in a region where the density of the transfer disk of the upper roll group is lower than the density of the corresponding transfer disk of the lower roll group, the pressure for jetting the etching liquid from the lower spray is changed from the upper spray to the lower spray. The pressure is higher than the pressure at which the etchant is sprayed. Therefore, the resin insulating layer on the lower surface of the substrate is more likely to be hindered by the transport disk than the resin insulating layer on the upper surface, and the etching rate on the lower surface side can be increased despite the fact that the etching is less likely to be roughened. Further, it can be adjusted so as to be substantially equal to the etching rate on the upper surface side. Therefore, it is possible to reduce the problem of etching roughening due to foreign matter,
Further, even if the etching time is shortened by increasing the transfer speed of the entire substrate, the difference in the etching state between the upper and lower metal layers is small, and a wiring substrate with a high yield can be manufactured. Here, the etching solution for roughening the surface of the resin insulating layer may be appropriately selected in consideration of the material of the resin insulating layer and the like. For example, potassium permanganate, sodium permanganate, chromic acid, And sodium chromate.

Another solution is to provide a lower roll group in which a plurality of lower rolls each having a plurality of transport disks are rotatably arranged, and a plurality of lower roll groups located above the lower roll group. An upper roll group in which the upper rolls each including the transport disk are rotatably arranged, and the substrate to be etched, which is sandwiched between the lower roll group and the upper roll group and transported in the horizontal direction, is etched from above. An etching apparatus comprising: an upper spray for injecting a liquid; and a lower spray for injecting an etchant from below, wherein a density per unit area in a horizontal direction of the transport disk belonging to the upper roll group is lower than the lower roll. A region having a density lower than the density of the transport disks belonging to a group, and a pressure of an etchant sprayed from the lower spray in at least the region. A lower pressure regulator for adjusting, and an upper pressure regulator for adjusting the pressure of the etchant sprayed from the upper spray in at least the region, wherein the lower pressure regulator is lower than the adjustment pressure value of the upper pressure regulator. An etching apparatus characterized in that the adjustment pressure value is increased.

According to the present invention, the etching apparatus has an area where the density of the transport disks of the upper roll group is smaller than the density of the transport disks of the lower roll group. In this region, the adjustment pressure value of the lower pressure regulator is higher than the adjustment pressure value of the upper pressure regulator. For this reason, by using this etching apparatus, when etching a required portion of the metal layer or the resin insulating layer formed on the substrate, foreign matter that has been chipped or peeled off from the substrate by the transport disk remains on the substrate, The occurrence of etching defects is reduced. In addition, the lower surface side of the substrate is obstructed by the transport disk and harder to etch than the upper surface side, but the etching speed of the lower surface side can be increased. Further, the etching rate can be made substantially equal to the etching rate on the upper surface side. Therefore, etching can be performed in a short time, and a wiring substrate with a high yield can be manufactured.

[0019]

Embodiments of the present invention will be described below with reference to the drawings. In this embodiment, first, a wiring layer is formed on the upper and lower surfaces of the core substrate by a subtractive method. Next, the surface of the wiring layer is roughened, and a resin insulating layer is laminated thereon. After that, the surface of the resin insulating layer is roughened, and a wiring layer is formed thereon by a semi-additive method. Therefore, when the wiring layer is formed by the subtractive method, the present invention is applied in the first etching step, and when the surface of the wiring layer is roughened, the second etching step is performed.
When the present invention is separately applied in the etching step and the surface of the resin insulating layer is roughened, the present invention is separately applied in the third etching step, and further, when the wiring layer is formed by the semi-additive method, The present invention is applied separately in four etching steps.

In manufacturing a wiring substrate, a laminated substrate 1 is prepared in advance as shown in FIG. The laminated substrate 1 is composed of a glass-BT resin core substrate 2 and has metal layers 3 and 4 on its upper surface 2A and lower surface 2B, respectively. Further, a metal layer is also provided on the inner peripheral surface of a large number of holes formed in the core substrate 2, and a through-via conductor 5 that is electrically connected to the upper and lower metal layers 3, 4 is formed. The resin 6 is filled in the through hole.

The laminated substrate 1 is manufactured as follows. That is, a double-sided copper-clad board having copper foil on both sides of the core board 2 is drilled by a drill. Then, electroless plating and electrolytic plating are sequentially performed on the substrate, and a plating layer is formed on the copper foil and on the inner peripheral surface of the perforated hole. This allows
The metal layers 3 and 4 including a copper foil, an electroless plating layer, and an electrolytic plating layer are formed on the upper surface 2A and the lower surface 2B of the core substrate 2, and the inner peripheral surface of the perforated hole is provided with the electroless plating layer and the electrolytic plating. The through-via conductor 5 made of a layer is formed. Thereafter, when the through-hole of the through via conductor 5 is filled with the resin 6, the laminated substrate 1 is obtained.

Next, a method of manufacturing a wiring board according to the present embodiment will be described with reference to FIGS. First, a commercially available photosensitive film is attached to substantially the entire upper surface 1A and lower surface 1B of the substrate 1 to be laminated, and an etching resist layer is formed on the metal layers 3 and 4. Thereafter, the etching resist layers are respectively exposed and developed using a mask having a predetermined pattern (not shown) to form etching resist layers 7 and 8 having a predetermined pattern as shown in FIG. Therefore, the substrate 10 in this state has the upper surface 10A and the lower surface 10B.
Has a predetermined pattern of etching resist layers 7 and 8, from which a part of the metal layers 3 and 4
It is exposed on the 0A side and the lower surface 10B side. Hereinafter, the exposed portions of the metal layers 3 and 4 are referred to as exposed portions 3C and 4C.

Next, in the first etching step, FIG.
As shown in FIG. 4 and FIG. 4, the substrate 10 in which a part of the metal layers 3 and 4 is exposed on the upper and lower surfaces is put into the first etching apparatus 30, and the exposed portions 3C and 4C of the metal layers 3 and 4 are simultaneously moved up and down. Remove by etching. FIG. 3 is a view of the substrate 10 and the first etching apparatus 30 as viewed from the side. FIG.
FIG. 4A is a view of the lower roll group 36 of the substrate 10 and the first etching apparatus 30 as viewed from below in FIG.
3B shows a view of the upper roll group 35 of the substrate 10 and the first etching apparatus 30 as viewed from above in FIG.

As shown in FIG. 3, the first etching apparatus 30 includes a lower roll group 36 in which lower rolls 33 each having a plurality of transport disks 31 are rotatably arranged, An upper roll group 35 is disposed above the group 36 and includes upper rolls 32 each having a plurality of transport disks 31 and rotatably arranged. As shown in FIG. 4A, the lower roll group 36 is arranged at regular intervals so that the axis of the lower roll 33 is orthogonal to the transport direction of the substrate 10 indicated by the arrow TR. I have. Also, the transport disk 31 of the lower roll 33
Are arranged at regular intervals, and are alternately arranged so as to be located in the middle between the transport disks 31 belonging to the adjacent lower rolls 33.

On the other hand, as shown in FIG. 4B, the upper roll group 35 is also spaced apart from each other at regular intervals so that the axis of the upper roll 32 is perpendicular to the direction of transport of the substrate 10 as indicated by the arrow TR. Are arranged. In addition, the transport disks 31 of the upper roll 32 are also arranged at regular intervals, and are alternately arranged with the transport disks 31 belonging to the adjacent upper roll 32. However, over the entire area of the area 45 indicated by the dashed line in FIG. 3, the upper roll group 35 includes less upper rolls 32 than the lower roll 33 of the lower roll group 36. It has about half of the upper rolls 32. Further, each upper roll 32 has a smaller number of transport disks 31 than the transport disks 31 of the lower roll 33, specifically, about half of the transport disks 31. Therefore, the transport disk 31 belonging to the upper roll group 35 is
The number is about one-fourth of the number of the transport disks 31 belonging to 6. That is, the entire area 4 where the upper and lower roll groups exist.
5, the density per unit area in the horizontal direction of the transport disks 31 belonging to the upper roll group 35 is as small as about ４ of the density per unit area in the horizontal direction of the transport disks 31 belonging to the lower roll group 36. Have been.

As shown in FIG. 3, the first etching apparatus 30 includes an upper spray pipe 41 and a lower spray pipe 41 for supplying an etching solution 40 above the upper roll group 35 and below the lower roll group 36. A plurality of tubes 42 are provided. The upper spray pipe 41 and the lower spray pipe 42 are provided with a plurality of upper sprays 37 and lower sprays 38, respectively. Top spray 3
7 and the lower spray 38 together
The etching liquids 40 are arranged at predetermined intervals so that the etching liquid 40 can be uniformly sprayed over substantially the entire upper and lower surfaces of the substrate. Further, the upper spray 37 and the lower spray 38 are arranged in the same number.

The first etching apparatus 30 has an upper pressure regulator 43 between an upper spray pipe 41 in which an upper spray 37 is installed and a pump (not shown) for supplying an etching solution 40. Similarly, a lower pressure regulator 44 is provided between a lower spray pipe 42 in which the lower spray 38 is installed and a pump (not shown). Therefore,
With these pressure regulators, the pressure of the etching solution 40 sprayed from the upper spray 37 and the lower spray 38 can be adjusted.

In the first etching step, the substrate 10 is
When the substrate 10 is put into the etching apparatus 30, the substrate 10 is sandwiched between the upper roll group 35 and the lower roll group 36 and transported in the horizontal direction. Then, while the substrate 10 is being conveyed,
The exposed portions 3C and 4C of the metal layers 3 and 4 on the upper surface 10A side and the lower surface 10B side are etched away by the etching solution 40 (sulfuric acid / hydrogen peroxide aqueous solution) sprayed from the upper spray 37 and the lower spray 38. At this time, the etching solution 4 sprayed from the lower spray 38 is lower than the pressure of the etching solution 40 sprayed from the upper spray 37.
Inject with increasing the pressure of 0. Specifically, in the present embodiment, the upper pressure regulator 43 and the lower pressure regulator 44 are each adjusted to set the pressure to be ejected from the upper spray 37 to 2.5 kg / cm ² and to be ejected from the lower spray 38. The pressure to be applied is set to 3.0 kg / cm ² .

In the first etching apparatus 30 of the present embodiment, the density of the transport disks 31 belonging to the upper roll group 35 is reduced to about one fourth of the density of the transport disks 31 belonging to the lower roll group 36. Therefore, it is less likely that a fragment (foreign matter) chipped or peeled off from the substrate 10 remains on the upper surface 10A of the substrate 10. Also,
Since the density of the transport disk 31 belonging to the lower roll group 36 is high, the exposed portion 4C of the metal layer 4 exposed on the lower surface 10B side of the substrate 10 due to the etching liquid being blocked by the transport disk 31, Is less likely to be removed by etching than the exposed portion 3C of the metal layer 3. Therefore, when the pressure sprayed from the upper spray 37 and the pressure sprayed from the lower spray 38 are equal, the etching rate is different between the upper and lower parts, so that only the exposed part 4C of the metal layer 4 on the lower surface 10B side is not sufficiently etched and removed. However, as described above, by making the pressure sprayed from the lower spray 38 higher than the pressure sprayed from the upper spray 37, the etching rate of the exposed portion 4C of the metal layer 4 on the lower surface 10B side can be improved. Furthermore, since the etching rate can be made substantially equal to the upper surface 10A side,
The etching can be efficiently removed.

After the first etching step, when the etching resist layers 7 and 8 having a predetermined pattern are peeled off, wiring layers 13 and 14 are formed on the upper surface 2A and the lower surface 2B of the core substrate 2, respectively, as shown in FIG. . Therefore, the substrate 11 in this state has the wiring layer 1 on the upper surface 11A side and the lower surface 11B side.
3, 14 (metal layer) are exposed. Here, in the first etching step, the upper surface 10A side of the substrate 10 and the lower surface 10B
Since the etching rate is adjusted between the upper and lower sides, the wiring layers 13 and 14 having a predetermined pattern are reliably formed on the upper and lower surfaces, and
High yield.

Next, the surfaces of the wiring layers 13 and 14 are roughened. That is, in the second etching step, the wiring layer 1 is formed on the upper surface 11A and the lower surface 11B by the second etching device 130.
The substrate 11 on which the metal layers 3 and 14 are exposed is loaded, and the surfaces of the wiring layers 13 and 14 are simultaneously etched and roughened. That is, in the second etching step, the metal layers 3 and
4 is different from the first etching step in which the exposed portions 3C and 4C of FIG.
7 is etched (micro-etched) only in the vicinity of the surface of FIG.
The surface 13A is roughened as shown in FIG.

The second etching apparatus 1 used here
30 (see FIG. 6), similarly to the above-described first etching apparatus 30, also includes a lower roll group 136 in which a lower roll 133 having a plurality of transport disks 131 is arranged, and a plurality of transport disks above the lower roll group 136. Upper roll 13 having 131
And an upper roll group 135 in which 2 are arranged. Then, similarly to the first etching apparatus 30 described with reference to FIG. 4, the density of the transport disk 131 belonging to the upper roll group 135 is about one fourth of the density of the transport disk 131 belonging to the lower roll group 136. Has been set to 1. Further, since the upper pressure regulator 143 and the lower pressure regulator 144 are also provided, the pressure of the etchant 140 ejected from the upper spray 137 and the lower spray 138 can be adjusted respectively.

At the time of the second etching, the present invention is applied separately similarly to the first etching step. That is, the substrate 11 is sandwiched between the upper roll group 135 and the lower roll group 136 and transported in the horizontal direction. And the substrate 1
1 is transported, the upper and lower surfaces of the wiring layers 13 and 14 are etched by a metal layer roughening etchant 140 (a solution of a copper complex and an organic acid) sprayed from the upper spray 137 and the lower spray 138. It is roughened by etching (see FIG. 7). At this time, the pressure of the etching solution 140 sprayed from the upper spray 137 (1.5 kg / c
The pressure (1.8 kg / cm ² ) of the etching solution 140 sprayed from the lower spray 138 is made higher than m ² ). Also in the case of this etching roughening, as in the case described above, the density of the transport disks 131 belonging to the upper roll group 135 is low, so that the etching roughening caused by foreign matter is small. Further, by making the pressure sprayed from the lower spray 138 higher than the pressure sprayed from the upper spray 137, the upper and lower etching rates can be made substantially constant, so that the etching can be roughened efficiently. Therefore, the surface state (surface roughness and the like) of the metal layer (wiring layers 13 and 14) after etching and roughening and the thickness of the metal layers (wiring layers 13 and 14) are made substantially equal on the upper and lower surfaces of the substrate 11. Can be.

Next, an uncured resin insulating layer is formed by superimposing a sheet-shaped uncured resin made of a photosensitive epoxy resin on substantially the entire upper and lower surfaces of the substrate 11 having the roughened wiring layers 13 and 14. . Thereafter, the uncured resin insulating layer is exposed and developed using a mask having a predetermined pattern (not shown). Further, this is heated to cure the patterned uncured resin insulating layer, and as shown in FIG.
The resin insulating layer 1 having a predetermined pattern having a large number of via holes 17
5 and 16 are formed. Therefore, the substrate 12 in this state is
Resin insulating layers 15 and 16 are provided on the upper surface 12A and the lower surface 12B. Since the upper and lower wiring layers 13 and 14 have been roughened to a desired surface roughness by the second etching step, the wiring layers 13 and 14 and the resin insulating layers 15 and 16 are in good contact with each other. In addition, the adhesive strength is substantially equal between the upper and lower surfaces.

Next, the surfaces of the resin insulating layers 15 and 16 are roughened. That is, in the third etching step, the upper surface 12A and the lower surface 12A are provided to the third etching device 230 shown in FIG.
The substrate 12 on which the resin insulating layers 15 and 16 are exposed is put into B, and the surfaces of the resin insulating layers 15 and 16 are simultaneously etched and roughened. That is, in the third etching step, only the surfaces of the resin insulating layers 15 and 16 are etched in the same manner as the surface of the wiring layers 13 and 14 is roughened in the second etching step. Resin insulation layer 1 surrounded by
5 is enlarged in FIG.
A is a rough surface.

The third etching apparatus 2 used here
9, a plurality of transport disks 231 are also provided as shown in FIG.
Roll group 236 having an array of lower rolls 233 having an upper roll, and upper roll group 23 having an upper roll 232 having a plurality of transport discs 231 arranged thereon.
5 is provided. Then, similarly to the etching apparatus 30 described with reference to FIG. 4, the density of the transport disk 231 belonging to the upper roll group 235 is reduced to about の of the density of the transport disk 231 belonging to the lower roll group 236. Have been. Further, since the upper pressure regulator 243 and the lower pressure regulator 244 are also provided, the pressure of the etching liquid 240 ejected from the upper spray 237 and the lower spray 238 can be adjusted respectively.

At the time of the third etching, the substrate 12 is sandwiched between the upper roll group 235 and the lower roll group 236 and transported in the horizontal direction. The upper spray 237 and the lower spray 238 are transported while the substrate 12 is being conveyed.
The upper and lower surfaces of the resin insulating layers 15 and 16 are etched and roughened by an etching solution 240 (potassium permanganate solution) sprayed from the substrate. At this time, the pressure of the etching solution 240 sprayed from the upper spray 237 (5.
5 kg / cm ² ), the pressure (6.0 kg / c) of the etching solution 240 sprayed from the lower spray 238.
m ² ) is increased. Also in the case of this etching roughening, as in the case described above, the density of the transport disk 231 belonging to the upper roll group 235 is low, so that there is little problem of etching roughening due to foreign matter. In addition, lower spray 2
By making the pressure sprayed from the upper spray 237 higher than the pressure sprayed from the upper spray 237, the upper and lower etching rates can be made substantially constant, so that the etching can be roughened efficiently. Therefore, the surface state (surface roughness etc.) of the resin insulating layers 15 and 16 after the etching is roughened.
Can be made substantially equal on the upper and lower surfaces of the substrate 12.

Next, as shown in FIG. 11, electroless plating is applied to the entire surfaces of the resin insulating layers 15 and 16 whose surfaces have been roughened to form a 0.7 μm thick electroless plating layer 19 made of copper.
20 is formed. Then, the upper and lower electroless plating layers 19,
Attaching a commercially available photosensitive film to almost the entire surface of 20,
A plating resist layer is formed. Then, the plating resist layers are respectively exposed and developed by using a mask having a predetermined pattern (not shown) to form plating resist layers 21 and 22 having a predetermined pattern. Since the upper and lower resin insulating layers 15 and 16 are roughened to a desired surface roughness by the third etching step, the resin insulating layers 15 and 16 and the electroless plating layers 19 and 20 are good. And the adhesive strength is almost equal between the upper and lower surfaces.

Next, electrolytic plating is performed, and a plating made of copper is further thickened on the electroless plating layers 19 and 20 exposed from the plating resist layers 21 and 22 having a predetermined pattern.
Electrolytic plating layers 23 and 24 having a thickness of 20 μm are formed. Thereafter, as shown in FIG. 12, the plating resist layers 21 and 22 having a predetermined pattern are peeled off. In the substrate 29 in this state, the metal layers 25 and 26 including the electroless plating layers 19 and 20 and the electrolytic plating layers 23 and 24 are formed on substantially the entire upper surface 29A and the lower surface 29B, respectively. Of the metal layers 25 and 26, the electroless plating layer 1 as viewed in the thickness direction.
The portions where only 9 and 20 are formed (the portions corresponding to the peeled plating resist layers 21 and 22) are hereinafter referred to as thin portions 25.
C and 26C.

Next, in a fourth etching step, FIG.
The substrate 29 with the metal layers 25 and 26 exposed on substantially the entire upper and lower surfaces is put into a fourth etching device 330 shown in FIG. 3 and a part of the metal layers 25 and 26 exposed on the upper and lower surfaces, that is, the metal layer 25 is exposed. , 26, all of the thin portions 25C, 26C and a part of the surface of the electrolytic plating layers 23, 24 are simultaneously removed by etching vertically. That is, in the fourth etching step, unlike the first etching step in which the exposed portions 3C and 4C of the thick metal layers 3 and 4 are all removed by etching, the thin portions 25C and 26C
(Thickness 0.7 μm) is completely removed, and the electrolytic plating layer 2
Gently etch away so that most of 3,24 (20 μm thick) remains. Then, wiring layers 27 and 28 having a predetermined pattern are formed by the remaining most of the electrolytic plating layers 23 and 24, as shown in FIG.

The fourth etching device 3 used here
As shown in FIG. 13, a plurality of transport disks 331 are also provided.
Roll group 336 in which a lower roll 333 having a plurality of transport disks 331 is arranged above the lower roll group 336 in which a lower roll 333 having a plurality of transport disks 331 are arranged.
5 is provided. Then, similarly to the first etching apparatus 30 described with reference to FIG. 4, the density of the transport disks 331 belonging to the upper roll group 335 is reduced.
The density is set to about one-fourth of the density of the transport disk 331 to which 6 belongs. In addition, since the upper pressure regulator 343 and the lower pressure regulator 344 are also provided, the pressure of the etching solution 340 ejected from the upper spray 337 and the lower spray 338 can be respectively adjusted.

At the time of the fourth etching, the substrate 29 is sandwiched between the upper roll group 335 and the lower roll group 336 and is transported in the horizontal direction. Then, the upper spray 337 and the lower spray 338 are transferred while the substrate 29 is being conveyed.
The upper and lower metal layers 25 and 26 are partly removed by etching with an etching solution 340 (aqueous sodium sulfate solution) sprayed from the substrate. At this time, the pressure of the etching solution 340 sprayed from the upper spray 337 (1.0 kg /
cm ² ), the pressure (1.2 kg / cm ² ) of the etching solution 340 sprayed from the lower spray 338 is higher.

Also in the case of this etching removal, as in the case described above, since the density of the transport disk 331 belonging to the upper roll group 335 is low, there is little problem of foreign matter removing by etching. Further, by making the pressure sprayed from the lower spray 338 higher than the pressure sprayed from the upper spray 337, the upper and lower etching rates can be made substantially constant, so that the etching can be efficiently removed. After this fourth etching step,
As shown in FIG. 14, wiring layers 27 and 28 are further formed on resin insulating layers 15 and 16, and thereafter, if necessary, a solder resist layer is formed by a known method, or A wiring board is completed by forming a resin insulating layer and further forming a wiring layer.

As explained above, in each of the first to fourth etching steps, each of the etching devices 3
Upper roll groups 35, 13 of 0, 130, 230, 330
5,235,335 transport disks 31, 131, 23
1,331 is reduced to about one-fourth the density of the transport disk 31 and the like of the lower roll group 36, 136, 236, 336 throughout the apparatus, and the lower spray 3
The pressure ejected from 8,138,238,338 is higher than the pressure ejected from the upper sprays 37,137,237,337.

For this reason, the metal layers 3 and 4 exposed on the upper and lower sides of the substrates 10, 11, 12 and 29, the wiring layers 13 and 14,
When the resin insulating layers 15 and 16 or the metal layers 25 and 26 are etched, the lower surface 10 of the substrate 10 or the like is removed.
Although the metal layer 4 and the like on the side B and the like are obstructed by the transport disk 31 and the like and are hardly etched, the etching rate on the side such as the lower surface 10B can be improved. Moreover,
It can be adjusted so as to be substantially equal to the etching rate on the upper surface 10A and the like. Therefore, the entire etching time can be shortened, and a wiring board with a high yield can be manufactured.

In the above, the present invention has been described with reference to the respective embodiments. However, the present invention is not limited to the above embodiments, and it can be said that the present invention can be appropriately modified and applied without departing from the gist thereof. Not even. For example, in the above embodiment, as shown by the dashed line in FIGS. 3, 6, 9, and 13, the regions 45, 14 over the entire upper and lower roll groups are provided.
In the entire area of 5,245,345, the upper roll group 35,13
Transport disks 31, 13 belonging to 5,235,335
The density per unit area in the horizontal direction of 1, 1, 231 and 331 is lower than the density of the transport disk 31 and the like belonging to the lower roll groups 36, 136, 236 and 336.

However, only a part of the upper roll group 35 etc.
That is, only in the limited area, the transport disk 31
Etc. may be reduced. For example, an etching apparatus as shown in FIG. 15 may be used. That is, this etching apparatus includes a lower roll group 49 in which a lower roll 33 having a plurality of transport disks 31 is arranged, and a plurality of transport disks 3 arranged above the lower roll group 49.
1 and an upper roll group 48 in which a plurality of the upper rolls 32 having the number 1 and the lower rolls 33 are arranged. More specifically, in the right part of the etching apparatus, the density per unit area of the transport disk 31 belonging to the lower roll group 49 and the density per unit area of the transport disk 31 belonging to the upper roll group 48 are shown. And are equal. On the other hand, in a region 47 of the etching device surrounded by a dashed line on the left side of the drawing, the unit area of the transport disk 31 belonging to the upper roll group 48 is the same as in the etching device 30 and the like (see FIG. 3 and the like). The density per contact is reduced to about one-fourth of the density per unit area of the transport disk 31 belonging to the lower roll group 49.

Also in such an etching apparatus, at least in the specific region 47, the upper spray 3
The pressure of the etching liquid jetted from the lower spray 38 is set higher than the pressure of the etching liquid jetted from the nozzle 7. As described above, even when the present invention is applied to some of the regions 47 of the upper and lower roll groups, as described above, the etching speed on the lower surface side and the etching speed on the upper surface side are adjusted to be approximately equal. be able to.

In the above embodiment, the upper roll group 3
In order to lower the density per unit area in the horizontal direction of the transport disk 31 and the like belonging to 5 and the like, lower the number of the upper rolls 32 and the like than the number of the lower rolls 33 and the like, Further, the number of transport disks 31 and the like per one of the upper rolls 32 and the like is also reduced as compared with the lower rolls 33 and the like. However, the present invention is not limited to this. In the area under consideration, the upper roll group 35 and the like use the same number of transport disks 31 and the like per roll for the upper roll group 35 and the lower roll group 36 and the like. , The density of the transport disk 31 or the like per unit area in the horizontal direction may be reduced.

On the contrary, in the area under consideration,
The number of rolls included in the upper roll group 35 and the like and the lower roll group 36 and the like are made equal, and the number of the transport disks 31 and the like per roll is reduced by the upper rolls 32 and the like belonging to the upper roll group 35 and the like. The density of the transport disk 31 or the like per unit area may be reduced. further,
Also in these cases, the present invention can be applied to a region covering the entire region of the upper and lower roll groups, or the present invention can be applied to only a part of the region.

In the above embodiment, when the wiring layers 27 and 28 are formed by the semi-additive method, the metal layer 2
The metal layers 25 and 26 are partially removed by etching while the upper and lower surfaces 5 and 26 are exposed on substantially the entire upper and lower surfaces of the substrate 29. However, for example, before etching, the metal layers 25, 2
6, an etching protection film such as Sn plating may be formed on portions other than the thin portions 25C and 26C. In this case, the portions of the metal layers 25 and 26 where the etching protection film is formed are not removed by etching.
Only the thin portions 25C and 26C of the metal layers 25 and 26 are etched away.

[Brief description of the drawings]

FIG. 1 is a partially enlarged cross-sectional view showing a laminated substrate used for manufacturing a wiring substrate according to an embodiment.

FIG. 2 is a view showing the method for manufacturing the wiring board according to the embodiment, and is a partially enlarged cross-sectional view showing a state where an etching resist layer having a predetermined pattern is formed on the substrate to be laminated.

FIG. 3 is a diagram illustrating a method of manufacturing a wiring board and a first etching apparatus according to the embodiment, and illustrates a state in which a substrate in which a part of a metal layer is exposed on upper and lower surfaces is being removed while being etched while being transported. FIG.

4A and 4B are diagrams illustrating a method for manufacturing a wiring board and a first etching apparatus according to the embodiment, wherein FIG. 4A illustrates the substrate being etched and removed as viewed from below a lower roll group of the first etching apparatus. FIG. 3B is an explanatory view of the substrate being removed by etching and the first etching apparatus as viewed from above an upper roll group.

FIG. 5 is a diagram illustrating a method of manufacturing the wiring board according to the embodiment, and is a partially enlarged cross-sectional view illustrating a state where wiring layers are formed on upper and lower surfaces of a core substrate.

FIG. 6 is a diagram illustrating a method for manufacturing a wiring board and a second etching apparatus according to the embodiment, and illustrates a state in which a substrate having a wiring layer exposed on the upper and lower surfaces is roughened by etching while being transported from the side. FIG.

FIG. 7 is a diagram illustrating a method of manufacturing the wiring board according to the embodiment, and is a partially enlarged cross-sectional view illustrating a state where the surface of the wiring layer exposed on the upper and lower surfaces of the substrate is etched and roughened.

FIG. 8 is a view showing the method of manufacturing the wiring board according to the embodiment, and is a partially enlarged cross-sectional view showing a state where a resin insulating layer of a predetermined pattern is formed on the upper and lower surfaces of the board on which the wiring layer is formed.

FIG. 9 is a view showing a method for manufacturing a wiring board and a third etching apparatus according to the embodiment, and shows a state in which etching and roughening is performed while transporting a board having a resin insulating layer exposed on upper and lower surfaces. FIG.

FIG. 10 is a diagram illustrating the method of manufacturing the wiring board according to the embodiment, and is a partially enlarged cross-sectional view illustrating a state where the surface of the resin insulating layer exposed on the upper and lower surfaces of the substrate is etched and roughened.

FIG. 11 is a view showing the method of manufacturing the wiring board according to the embodiment, and is a partially enlarged cross-sectional view showing a state where an electroless plating layer and a plating resist layer having a predetermined pattern are formed on a resin insulating layer.

FIG. 12 is a diagram illustrating a method of manufacturing the wiring board according to the embodiment, and is a partially enlarged cross-sectional view illustrating a state where an electrolytic plating layer is formed on a part of the electroless plating layer.

FIG. 13 is a diagram illustrating a method for manufacturing a wiring board according to the embodiment and a fourth method.
FIG. 4 is a diagram showing an etching apparatus, and is an explanatory diagram viewed from the side, showing a state in which a substrate having a metal layer exposed on substantially the entire upper and lower surfaces is being removed while being transported.

FIG. 14 is a diagram illustrating the method of manufacturing the wiring board according to the embodiment, and is a partially enlarged cross-sectional view illustrating a state where a wiring layer is formed on a resin insulating layer.

FIG. 15 is a diagram showing another method of manufacturing a wiring board and an etching apparatus, and shows a state in which etching is removed while the board is being transported using an etching apparatus in which the density of a transport disk on the upper side is partially reduced. It is explanatory drawing seen from the side.

16A and 16B are diagrams illustrating a method of manufacturing a wiring board and an etching apparatus according to the related art, in which FIG. 16A is an explanatory view illustrating a state where the substrate is being etched and removed while being transported, and FIG. FIG. 5 is an explanatory diagram of the substrate and the etching apparatus during etching removal as viewed from above an upper roll group.

[Explanation of symbols]

3, 4, 25, 26 Metal layer 13, 14 Wiring layer 15, 16 Resin insulating layer 10 Substrate 11 (exposed wiring layer) Substrate 11 (exposed wiring layer) 12 (Exposed resin insulating layer) Substrate 29 Substrate 10A, 11A, 12A, 29A (substrate) upper surface 10B, 11B, 12B, 29B (substrate) lower surface (substrate) lower surface 30 First etching device 130 Second etching device 230 Third Etching device 330 Fourth etching device 31, 131, 231, 331 Carrier disk 32, 132, 232, 332 Upper roll 33, 133, 233, 333 Lower roll 35, 48, 135, 235, 335 Upper roll group 36, 49 , 136, 336, 336 Lower roll group 37, 137, 237, 337 Upper spray 38, 138, 238 338 Lower spray 40, 140, 240, 340 Etching solution 43, 143, 243, 343 Upper pressure regulator 44, 144, 244, 344 Lower pressure regulator 45, 47, 145, 245, 345 (Density of upper carrier disk Area)

 ──────────────────────────────────────────────────続 き Continuing on the front page F term (reference) 4K057 WA05 WA10 WB04 WB20 WC10 WM06 WM08 WM18 WN02 5E339 AD03 BC02 BD03 BD06 BD11 BE13 BE16 CC01 CC10 CD01 CE12 CE16 CF16 DD02 EE04 FF03 FF10 GG02 5E346 AA19 AE31 BB31 EE38 GG01 GG22 GG27 HH33

Claims (3)

[Claims] 1. A lower roll group comprising a substrate having a metal layer at least partially exposed on an upper surface side and a lower surface side, and a lower roll group in which a lower roll having a plurality of transport disks is rotatably arranged. An upper roll provided with a plurality of the transport disks above the lower roll group is nipped by an upper roll group arranged rotatably, and transported in the horizontal direction. A method of manufacturing a wiring board, comprising: an etching step of injecting an etchant from an upper spray and a lower spray below to etch an exposed portion of the metal layer, wherein a horizontal direction of the transport disk belonging to the upper roll group is provided. A region in which the density per unit area is smaller than the density of the transport disk belonging to the lower roll group is formed, Both in the area, than the pressure of the etchant to be sprayed from the upper spray method for manufacturing a wiring substrate, characterized by increasing the pressure of the etchant to be sprayed from the lower spray. 2. A lower roll group in which a substrate having a resin insulating layer on each of an upper surface and a lower surface is rotatably arranged on a lower roll provided with a plurality of transport disks, and a lower roll group above the lower roll group. An upper roll and a lower spray on the substrate to be transported while the upper roll having a plurality of the transport disks are sandwiched between upper rolls arranged rotatably and transported in the horizontal direction. A method of manufacturing a wiring board comprising an etching step of spraying an etchant from each to etch and roughen the resin insulating layer, wherein the density per unit area in the horizontal direction of the transport disk belonging to the upper roll group is: While forming an area smaller than the density of the transport disk belonging to the lower roll group, at least in the area, Than the pressure of the etchant to be sprayed from the upper spray method for manufacturing a wiring substrate, characterized by increasing the pressure of the etchant to be sprayed from the lower spray. 3. A lower roll group in which lower rolls each including a plurality of transport disks are rotatably arranged, and an upper side including a plurality of the transport disks positioned above the lower roll group. An upper roll group in which rolls are rotatably arranged, and an upper spray for spraying an etching solution from above onto a substrate to be etched which is sandwiched between the lower roll group and the upper roll group and conveyed horizontally. And a lower spray for injecting an etchant from below, wherein the density per unit area in the horizontal direction of the transport disk belonging to the upper roll group is equal to the transport disk belonging to the lower roll group. And a lower pressure for adjusting the pressure of the etchant sprayed from the lower spray in at least the above area. An adjuster, and an upper pressure adjuster for adjusting the pressure of the etchant sprayed from the upper spray in at least the region, and an adjustment pressure value of the lower pressure adjuster that is lower than an adjustment pressure value of the upper pressure adjuster. An etching apparatus characterized in that the height is increased.