JP2001035790A5 - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
- Publication number
- JP2001035790A5 JP2001035790A5 JP1999199658A JP19965899A JP2001035790A5 JP 2001035790 A5 JP2001035790 A5 JP 2001035790A5 JP 1999199658 A JP1999199658 A JP 1999199658A JP 19965899 A JP19965899 A JP 19965899A JP 2001035790 A5 JP2001035790 A5 JP 2001035790A5
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- semiconductor device
- thin film
- semiconductor thin
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title description 18
- 238000004519 manufacturing process Methods 0.000 title description 10
- 239000010409 thin film Substances 0.000 description 8
- 125000004429 atoms Chemical group 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- HGCGQDMQKGRJNO-UHFFFAOYSA-N Xenon monochloride Chemical compound [Xe]Cl HGCGQDMQKGRJNO-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
【特許請求の範囲】
【請求項１】
基板上に非晶質半導体薄膜を形成し、
紫外光又は赤外光を照射して前記非晶質半導体薄膜を結晶性半導体薄膜に変化させる第１熱処理を行い、
前記結晶性半導体薄膜に対して還元雰囲気中で９００〜１２００℃の第２熱処理をすることを特徴とする半導体装置の作製方法。
【請求項２】
請求項１において、
前記紫外光は、紫外光ランプまたはＫｒＦ、ＸｅＣｌ、ＡｒＦを励起ガスとするエキシマレーザーを用いることを特徴とする半導体装置の作製方法。
【請求項３】
請求項１において、
前記赤外光は、赤外光ランプまたはＮｄ：ＹＡＧレーザー、Ｎｄ：ガラスレーザー、ルビーレーザーを用いることを特徴とする半導体装置の作製方法。
【請求項４】
請求項２または請求項３において、
前記レーザーのビーム形状は線状であることを特徴とする半導体装置の作製方法。
【請求項５】
請求項２または請求項３において、
前記レーザーのビーム形状は面状であることを特徴とする半導体装置の作製方法。
【請求項６】
請求項１乃至請求項５のいずれか一項において、
前記非晶質半導体薄膜を形成する際に、前記非晶質半導体薄膜中の炭素及び窒素の濃度を５×１０ １８ ａｔｏｍｓ／ｃｍ ３ 以下且つ酸素の濃度を１．５×１０ １９ ａｔｏｍｓ／ｃｍ ３ 以下に管理することを特徴とする半導体装置の作製方法。
【請求項７】
請求項１乃至請求項５のいずれか一項において、
前記非晶質半導体薄膜を形成する際に、前記非晶質半導体薄膜中の炭素及び窒素の濃度を１×１０ １８ ａｔｏｍｓ／ｃｍ ３ 以下且つ酸素の濃度を５×１０ １８ ａｔｏｍｓ／ｃｍ ３ 以下に管理することを特徴とする半導体装置の作製方法。
【請求項８】
請求項１乃至請求項７のいずれか一項において、
前記第２熱処理はファーネスアニール処理であることを特徴とする半導体装置の作製方法。
【請求項９】
請求項１乃至請求項８のいずれか一項において、
前記還元雰囲気は水素雰囲気またはアンモニア雰囲気であることを特徴とする半導体装置の作製方法。
[Claims]
[Claim 1]
Amorphous semiconductor thin film is formed on the substrate,
By irradiating ultraviolet light or infrared light subjected to first heat treatment for changing the amorphous semiconductor thin film to a crystalline semiconductor thin film,
A method for manufacturing a semiconductor device, which comprises subjecting the crystalline semiconductor thin film to a second heat treatment at 900 to 1200 ° C. in a reducing atmosphere.
2.
In claim 1,
A method for producing a semiconductor device, wherein the ultraviolet light uses an ultraviolet lamp or an excimer laser using KrF, XeCl, or ArF as an excitation gas.
3.
In claim 1,
A method for manufacturing a semiconductor device, wherein the infrared light uses an infrared light lamp or an Nd: YAG laser, an Nd: glass laser, or a ruby laser.
4.
In claim 2 or 3,
A method for manufacturing a semiconductor device, wherein the beam shape of the laser is linear.
5.
In claim 2 or 3,
A method for manufacturing a semiconductor device, wherein the beam shape of the laser is planar.
6.
In any one of claims 1 to 5,
When forming the amorphous semiconductor thin film, the concentration of carbon and nitrogen in the amorphous semiconductor thin film is 5 × 10 18 atoms / cm 3 or less, and the concentration of oxygen is 1.5 × 10 19 atoms / cm 3. A method for manufacturing a semiconductor device, which is characterized by being managed as follows.
7.
In any one of claims 1 to 5,
When forming the amorphous semiconductor thin film, the concentration of carbon and nitrogen in the amorphous semiconductor thin film is 1 × 10 18 atoms / cm 3 or less, and the oxygen concentration is 5 × 10 18 atoms / cm 3 or less. A method for manufacturing a semiconductor device, which is characterized by being managed.
8.
In any one of claims 1 to 7 ,
A method for manufacturing a semiconductor device, wherein the second heat treatment is a furnace anneal treatment.
9.
In any one of claims 1 to 8,
A method for manufacturing a semiconductor device, wherein the reducing atmosphere is a hydrogen atmosphere or an ammonia atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19965899A JP4493752B2 (en) | 1998-07-17 | 1999-07-13 | Method for manufacturing semiconductor device |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-203205 | 1998-07-17 | ||
| JP20320598 | 1998-07-17 | ||
| JP11-135055 | 1999-05-14 | ||
| JP13505599 | 1999-05-14 | ||
| JP19965899A JP4493752B2 (en) | 1998-07-17 | 1999-07-13 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001035790A JP2001035790A (en) | 2001-02-09 |
| JP2001035790A5 true JP2001035790A5 (en) | 2006-08-10 |
| JP4493752B2 JP4493752B2 (en) | 2010-06-30 |
Family
ID=27317007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19965899A Expired - Fee Related JP4493752B2 (en) | 1998-07-17 | 1999-07-13 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4493752B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG114529A1 (en) * | 2001-02-23 | 2005-09-28 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| US6841797B2 (en) | 2002-01-17 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed over a surface with a drepession portion and a projection portion |
| JP4526764B2 (en) * | 2002-01-17 | 2010-08-18 | 株式会社半導体エネルギー研究所 | Semiconductor device and semiconductor device production system |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05299339A (en) * | 1991-03-18 | 1993-11-12 | Semiconductor Energy Lab Co Ltd | Semiconductor material and its manufacture |
| JP3287596B2 (en) * | 1992-01-31 | 2002-06-04 | キヤノン株式会社 | Semiconductor substrate and processing method thereof |
| JP2779289B2 (en) * | 1992-05-11 | 1998-07-23 | シャープ株式会社 | Method for manufacturing thin film transistor |
| JP3241515B2 (en) * | 1992-12-04 | 2001-12-25 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP3197707B2 (en) * | 1993-10-06 | 2001-08-13 | 松下電器産業株式会社 | Method for crystallizing silicon thin film and display device |
| JP3364081B2 (en) * | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP3675886B2 (en) * | 1995-03-17 | 2005-07-27 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film semiconductor device |
| JP3389022B2 (en) * | 1996-09-27 | 2003-03-24 | シャープ株式会社 | Semiconductor device |
| JP3597331B2 (en) * | 1996-10-24 | 2004-12-08 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
-
1999
- 1999-07-13 JP JP19965899A patent/JP4493752B2/en not_active Expired - Fee Related
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