JP2001035789A5 - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
- Publication number
- JP2001035789A5 JP2001035789A5 JP1999199657A JP19965799A JP2001035789A5 JP 2001035789 A5 JP2001035789 A5 JP 2001035789A5 JP 1999199657 A JP1999199657 A JP 1999199657A JP 19965799 A JP19965799 A JP 19965799A JP 2001035789 A5 JP2001035789 A5 JP 2001035789A5
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- JP
- Japan
- Prior art keywords
- manufacturing
- semiconductor device
- amorphous semiconductor
- less
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title description 18
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000010408 film Substances 0.000 description 6
- 125000004429 atoms Chemical group 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052803 cobalt Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000005712 crystallization Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Description
【特許請求の範囲】
【請求項１】
基板上に非晶質半導体膜を形成し、
前記非晶質半導体薄膜中に当該非晶質半導体薄膜の結晶化を助長する触媒元素を添加し、
紫外光又は赤外光を照射して前記非晶質半導体薄膜を結晶性半導体薄膜に変化させ、
前記結晶性半導体薄膜に対して還元雰囲気中で９００〜１２００℃の熱処理を行うことを特徴とする半導体装置の作製方法。
【請求項２】
請求項１において、
前記還元雰囲気はハロゲン元素を含むことを特徴とする半導体装置の作製方法。
【請求項３】
請求項１又は請求項２において、
前記熱処理はファーネスアニール処理であることを特徴とする半導体装置の作製方法。
【請求項４】
請求項１乃至請求項３のいずれか１項において、
前記熱処理は酸素又は酸素化合物の濃度を１０ｐｐｍ以下とした還元雰囲気中で行われることを特徴とする半導体装置の作製方法。
【請求項５】
請求項１乃至請求項４のいずれか１項において、
前記非晶質半導体膜は、当該非晶質半導体膜中の炭素及び窒素の濃度が５×１０ １８ ａｔｏｍｓ／ｃｍ ３ 以下且つ酸素の濃度が１．５×１０ １９ ａｔｏｍｓ／ｃｍ ３ 以下になるように形成されることを特徴とする半導体装置の作製方法。
【請求項６】
請求項１乃至請求項４のいずれか１項において、
前記非晶質半導体膜は、当該非晶質半導体膜中の炭素及び窒素の濃度が１×１０ １８ ａｔｏｍｓ／ｃｍ ３ 以下且つ酸素の濃度が５×１０ １８ ａｔｏｍｓ／ｃｍ ３ 以下になるように形成されることを特徴とする半導体装置の作製方法。
【請求項７】
請求項１乃至請求項６のいずれか１項において、
前記触媒元素はＮｉ、Ｃｏ、Ｆｅ、Ｐｄ、Ｐｔ、Ｃｕ、Ａｕ、Ｇｅ，Ｐｂ、Ｓｎを用いることを特徴とする半導体装置の作製方法。
[Claims]
[Claim 1]
Amorphous semiconductor film is formed on the substrate,
Adding a catalyst element for promoting crystallization of the amorphous semiconductor thin film on said amorphous semiconductor thin film,
Irradiate ultraviolet light or infrared light to change the amorphous semiconductor thin film into a crystalline semiconductor thin film .
The method for manufacturing a semiconductor device comprising a row Ukoto heat treatment 900 to 1200 ° C. in a reducing atmosphere with respect to the crystalline semiconductor film.
2.
In claim 1,
A method for manufacturing a semiconductor device, wherein the reducing atmosphere contains a halogen element.
3.
In claim 1 or 2,
A method for manufacturing a semiconductor device, wherein the heat treatment is a furnace anneal treatment.
4.
In any one of claims 1 to 3,
A method for manufacturing a semiconductor device, wherein the heat treatment is performed in a reducing atmosphere in which the concentration of oxygen or an oxygen compound is 10 ppm or less.
5.
In any one of claims 1 to 4,
The amorphous semiconductor film has a carbon and nitrogen concentration of 5 × 10 18 atoms / cm 3 or less and an oxygen concentration of 1.5 × 10 19 atoms / cm 3 or less in the amorphous semiconductor film. A method for manufacturing a semiconductor device, which is characterized in that it is formed in.
6.
In any one of claims 1 to 4,
The amorphous semiconductor film is formed so that the concentration of carbon and nitrogen in the amorphous semiconductor film is 1 × 10 18 atoms / cm 3 or less and the concentration of oxygen is 5 × 10 18 atoms / cm 3 or less. A method for manufacturing a semiconductor device.
7.
In any one of claims 1 to 6,
A method for manufacturing a semiconductor device, which comprises using Ni, Co, Fe, Pd, Pt, Cu, Au, Ge, Pb, and Sn as the catalyst element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19965799A JP4493751B2 (en) | 1998-07-17 | 1999-07-13 | Method for manufacturing semiconductor device |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-203205 | 1998-07-17 | ||
| JP20320598 | 1998-07-17 | ||
| JP13505499 | 1999-05-14 | ||
| JP11-135054 | 1999-05-14 | ||
| JP19965799A JP4493751B2 (en) | 1998-07-17 | 1999-07-13 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001035789A JP2001035789A (en) | 2001-02-09 |
| JP2001035789A5 true JP2001035789A5 (en) | 2006-08-10 |
| JP4493751B2 JP4493751B2 (en) | 2010-06-30 |
Family
ID=27317006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19965799A Expired - Fee Related JP4493751B2 (en) | 1998-07-17 | 1999-07-13 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4493751B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003178979A (en) * | 2001-08-30 | 2003-06-27 | Semiconductor Energy Lab Co Ltd | Method for manufacturing semiconductor device |
| JP2003078141A (en) * | 2001-09-05 | 2003-03-14 | Sharp Corp | Semiconductor device and its manufacturing method as well as portable electronic equipment |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05299339A (en) * | 1991-03-18 | 1993-11-12 | Semiconductor Energy Lab Co Ltd | Semiconductor material and its manufacture |
| JP3287596B2 (en) * | 1992-01-31 | 2002-06-04 | キヤノン株式会社 | Semiconductor substrate and processing method thereof |
| JP2779289B2 (en) * | 1992-05-11 | 1998-07-23 | シャープ株式会社 | Method for manufacturing thin film transistor |
| JP3241515B2 (en) * | 1992-12-04 | 2001-12-25 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP3197707B2 (en) * | 1993-10-06 | 2001-08-13 | 松下電器産業株式会社 | Method for crystallizing silicon thin film and display device |
| JP3364081B2 (en) * | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP3675886B2 (en) * | 1995-03-17 | 2005-07-27 | 株式会社半導体エネルギー研究所 | Method for manufacturing thin film semiconductor device |
| JP3389022B2 (en) * | 1996-09-27 | 2003-03-24 | シャープ株式会社 | Semiconductor device |
| JP3597331B2 (en) * | 1996-10-24 | 2004-12-08 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
-
1999
- 1999-07-13 JP JP19965799A patent/JP4493751B2/en not_active Expired - Fee Related
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