JP2001015557A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a resin portion between a semiconductor element and a carrier board is reliably formed while preventing the bulging out of a superfluous portion of resin, to thereby prevent the degradation of adhesive strength between the semiconductor element and the carrier board, and wherein the size of the carrier board is not increased due to the presence of a recognition mark. SOLUTION: This semiconductor device comprises: a carrier board 8 having a recess 7 with a vertically stepping portion in the upper surface thereof, electrodes within the recess 7, and external electrodes 3 on the bottom thereof, the electrodes 3 being connected to the electrodes within the recess 7; a semiconductor element 1 placed into the recess 7 of the board 8 and connected to the electrodes of the board 8 through projecting electrodes 2; and a resin portion 9 provided between the element 1 and the recess 7 of the board 8. This structure prevents a resin from bulging out, which in turn prevents the degradation of adhesive strength between the element 1 and the board 8, and allows a position recognition mark 6 to be located close to the recess 7, i.e., the semiconductor element mounting region. As a result, the size of the board is prevented from increasing, whereby a small-sized semiconductor device can be realized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor element is mounted on a member to be bonded such as a carrier substrate by using a flip-chip mounting method with a resin interposed therebetween, and a method of manufacturing the same. TECHNICAL FIELD The present invention relates to a semiconductor device in which a resin is effectively interposed between a substrate and a body such as a substrate, and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, as a chip mounting technique for a semiconductor carrier or a semiconductor element such as a resin substrate or a ceramic substrate, or a motherboard such as a printed circuit board, a method of flip-chip mounting a main semiconductor element has been actively developed. I have.

Hereinafter, a method for manufacturing a semiconductor device using a conventional flip chip mounting method will be described with reference to the drawings. 10 to 13 are cross-sectional views for respective steps showing a conventional method for manufacturing a semiconductor device.

First, as shown in FIG. 10, a semiconductor device 1 to be flip-chip prepared is prepared.
A protruding electrode 2 (bump) is formed on each of the upper electrode pads (not shown). In this step, bump leveling is further performed in order to make the height of the top of the protruding electrode 2 uniform, and in this leveling, the bump electrode 2 is pressed by leveling using a flat plate jig.
Is leveled to approximately 50 [μm].

Next, as shown in FIG. 11, an electrode (not shown) corresponding to an electrode pad of a semiconductor element to be mounted is provided on an upper surface, and an external electrode connected to the electrode by a via hole in the substrate is provided on a bottom surface. An insulating carrier substrate 4 made of ceramic or the like having the electrodes 3 is prepared, and an insulating resin film 5 is placed on the electrode region on the upper surface thereof. Also,
Here, a recognition mark 6 for recognizing the position of the semiconductor element when the semiconductor element is bonded to the carrier substrate is provided on the upper surface of the carrier substrate 4.

Then, as shown in FIG. 12, the semiconductor element 1 is placed on the projecting electrode 2 so as to sandwich the resin film 5 with respect to the carrier substrate 4 on which the resin film 5 is mounted.
Is positioned downward with the recognition mark 6 and pressed. That is, the protruding electrode 2 of the semiconductor element 1 and the electrode of the carrier substrate 4 are aligned, and the electrodes are connected to each other. Since the resin film 5 interposed therebetween spreads while escaping to the outer region by pressing, conduction between the protruding electrode 2 and the electrode of the carrier substrate 4 can be established. This step is performed under a heating condition, so that the resin film 5 is softened and spreads while escaping to the outer region.

Therefore, as shown in FIG. 13, the semiconductor element 1 and the carrier substrate 4 are connected to each other via the protruding electrode 2, and an insulating resin by a resin film 5 is interposed therebetween. A flip-chip mounted semiconductor device having an external electrode 3 on the bottom surface is obtained.

[0008]

However, the conventional method of manufacturing a semiconductor device has various problems due to the resin interposed between the semiconductor element and the carrier substrate.

Hereinafter, the problems will be described with reference to the drawings. FIG. 14 is a plan view showing a conventional semiconductor device.

As shown in FIG. 14, the resin film 5 between the semiconductor element 1 and the carrier substrate 4 tries to escape outward by the pressing force at the time of connection. Because the resin spreads, the position recognition mark 6 for bonding provided on the carrier substrate 4 must be arranged near the outer portion of the substrate, and as a result,
As a whole, the carrier substrate 4 must be enlarged,
It has been difficult to reduce the size of the semiconductor device. Conversely, when the recognition mark 6 is provided in the vicinity where the semiconductor element 1 is mounted,
Since the resin film spreads due to the pressure at the time of joining and covers the recognition mark, recognition cannot be performed, and it is difficult to connect the semiconductor element 1 and the electrode of the carrier substrate 4 with high accuracy.

Further, the resin film 5 between the semiconductor element 1 and the carrier substrate 4 tends to escape outward by the pressing force at the time of connection. There is a difference in the amount protruding from the side. Depending on the difference in the amount of protrusion of the resin film 5,
There is a problem in that a difference occurs in stress application and the reliability as a product is impaired. The difference in the escape amount of the resin film 5 at the time of pressing is due to a variation in the positioning accuracy and a difference in the amount of the resin film when the resin film is placed on the upper surface of the carrier substrate.

Further, depending on the pressing force at the time of connection between the semiconductor element 1 and the carrier substrate 4, the side surface of the semiconductor element 1 of the resin film 5 is slackened, and the connection strength between the semiconductor element and the carrier substrate is deteriorated. Could cause
If the slack of the resin film 5 is small, there is no effect in the inspection process of the product, and the inspection process can proceed. However, if the slack of the resin film 5 is large, When the socket is stored during the inspection, the thickness becomes excessive, and the pressing force of the socket is applied to the semiconductor element itself, which may cause the semiconductor element to crack.

SUMMARY OF THE INVENTION The present invention is to solve the above-mentioned conventional problems, and it is possible to form a resin between a semiconductor element and a carrier substrate with certainty by suppressing excess protrusion, to prevent deterioration of the adhesive strength between the two, and to recognize the problem. It is an object of the present invention to provide a semiconductor device in which a carrier substrate is prevented from being enlarged due to the arrangement of marks, and to provide a semiconductor device in which a resin is interposed between a semiconductor element and a carrier substrate with high precision and a method of manufacturing the same. And

[0014]

In order to solve the above-mentioned conventional problems, a semiconductor device and a method of manufacturing the same according to the present invention have the following configurations. That is, the semiconductor device of the present invention has a concave portion having a step portion perpendicular to the upper surface, a wiring electrode on a surface inside the concave portion, and an external electrode connected to the wiring electrode and a via hole inside the substrate on a bottom surface. A carrier element, a semiconductor element mounted on the concave portion of the carrier substrate, wherein the wiring electrode and an electrode pad on the main surface thereof are connected via a protruding electrode; and a semiconductor element and the concave portion of the carrier substrate. A semiconductor device comprising a resin portion provided therebetween and a position recognition mark provided near a diagonal portion of the concave portion on the upper surface of the carrier substrate.

Specifically, the semiconductor device has a heat radiating plate provided between the surface of the semiconductor element and the upper surface of the carrier substrate via a heat radiating adhesive.

Further, the method of manufacturing a semiconductor device according to the present invention comprises the steps of: forming a protruding electrode on an electrode pad of a semiconductor element;
A concave portion having a step portion perpendicular to the upper surface, an electrode corresponding to the electrode pad of the semiconductor element in the concave portion, and an external electrode connected to the electrode and a via hole inside the substrate on the bottom surface,
A step of preparing a carrier substrate having a position recognition mark provided near a diagonal portion of the concave portion on the upper surface of the substrate, and a resin film having an area equivalent to the bottom area of the concave portion in the concave portion of the carrier substrate. Mounting, and positioning the surface of the semiconductor element on which the protruding electrodes are formed with the position recognition mark with respect to the concave portion of the carrier substrate on which a resin film is mounted; and Pressing the surface on which the protruding electrodes are formed against the concave portion of the carrier substrate on which the resin film is mounted, and connecting the protruding electrodes of the semiconductor element and the electrodes on the upper surface of the carrier substrate. It is a manufacturing method of an apparatus.

Specifically, the surface of the semiconductor element on which the projecting electrodes are formed is pressed against the concave portion of the carrier substrate on which the resin film is mounted, and the projecting electrodes of the semiconductor element and the upper surface of the carrier substrate are pressed. The step of connecting the electrodes is a method of manufacturing a semiconductor device performed under a heating condition.

As described above, the semiconductor device of the present invention comprises:
Since the resin portion is interposed in the recess so as to be housed, the resin between the semiconductor element and the carrier substrate is reliably formed by suppressing excess protrusion, and a semiconductor device in which the adhesive strength between the two is prevented from deteriorating can be realized. . In addition, since the step of the concave portion is formed vertically, the size (opening area) of the mounted semiconductor element and the concave portion can be set to the same level, and the diagonal portion near the concave portion can be formed on the substrate. Since the position recognition mark can be arranged, the position recognition mark can be arranged without making the carrier substrate unnecessarily large.

According to the method of manufacturing a semiconductor device of the present invention, a resin film having an area equal to or smaller than the bottom area of the concave portion is placed in the concave portion of the carrier substrate. Positioning is performed, and variations in positioning accuracy can be suppressed, and the resin film that escapes outward even when pressed when the semiconductor element / carrier substrate is connected can be made uniform. Further, since the concave portion of the carrier substrate is formed by a vertical step, the resin film which escapes outward by pressing when connecting the semiconductor element / carrier substrate does not protrude from the concave portion and the resin film which escapes outward. The film can be made uniform and can be reliably formed in the recess. Therefore, it is possible to avoid local application even by applying a stress, thereby preventing the reliability of the product from being impaired. Further, since the resin does not protrude from the concave portion, even if the recognition mark is arranged near the diagonal of the concave portion of the substrate, the recognition mark is not covered with the resin, so that the carrier substrate does not need to be made larger than necessary. .

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a semiconductor device according to the present invention and a method for manufacturing the same will be described below with reference to the drawings.

First, one embodiment of the semiconductor device of the present invention will be described. 1 and 2 are cross-sectional views illustrating a semiconductor device according to the present embodiment.

First, as shown in FIG. 1, the semiconductor device of the present embodiment has a concave portion 7 having a vertical step on the upper surface, a wiring electrode (not shown) on the surface within the concave portion, and A carrier substrate 8 having an external electrode 3 connected to the wiring electrode by a via hole inside the substrate and a recessed portion 7 of the carrier substrate 8 are provided. Semiconductor device 1 connected via
And a resin portion 9 provided between the semiconductor element 1 and the concave portion 7 of the carrier substrate 8.

In the semiconductor device of this embodiment, since the resin portion 9 is housed in the recess 7 having an opening equal to or larger than the area of the semiconductor element to be mounted, the semiconductor element 1 This is a semiconductor device in which the resin portion 9 between the / carrier substrates 8 is reliably formed with excessive protrusion suppressed, and deterioration of the adhesive strength between the two is prevented.

In the concave portion 7 on the substrate, the step angle is vertical (90 degrees), and is an angle such that the resin portion 9 is securely formed in the concave portion. Since the step of the concave portion 7 is formed vertically, the size (opening area) of the mounted semiconductor element 1 and the concave portion 7 can be set to the same level, and the diagonal substrate near the concave portion 7 can be formed. Since the position recognition mark 6 can be disposed thereon, the position recognition mark 6 can be disposed without making the carrier substrate unnecessarily large.

The resin portion 9 is formed up to the same level as the height of the upper surface of the carrier substrate 8. That is, the semiconductor element 1 has a structure in which the surface and the side surface of the protruding electrode 2 are surrounded by the resin portion 9. With such a structure, it is possible to further prevent the adhesive strength between the semiconductor element 1 and the carrier substrate 8 from deteriorating, thereby improving reliability.

In this embodiment, the resin portion 9 is an insulating resin mainly composed of epoxy resin, and the carrier substrate 8 is a ceramic substrate as an insulating substrate or a resin substrate mainly composed of epoxy resin. This is a substrate having a wiring pattern and its wiring electrode on the upper surface, and having an external electrode internally connected to the wiring electrode on the bottom surface. Further, in the present embodiment, the resin part 9 is a resin part with a film-like resin interposed therebetween, but the resin part may be formed with a fluid resin.

Further, the depth (step) of the concave portion 7 is determined by the thickness of the semiconductor element 1 plus the protrusion electrode if the semiconductor element 1 is housed and the bottom surface of the semiconductor element 1 and the upper surface of the carrier substrate 8 are flush with each other. 2, and the thickness of the semiconductor element 1 is 300 [μm] in this embodiment.
Since the height of the protruding electrode 2 is 50 [μm] after leveling, the depth of the concave portion 7 is set to 350 [μm]. In addition, as shown in FIG. 1, when the bottom surface side of the semiconductor element 1 is protruded from the upper surface of the carrier substrate 8, the depth of the recess
It may be about 50 [μm].

Further, in the semiconductor device of the present embodiment, the thickness T between the surface of the concave portion 7 and the bottom surface of the carrier substrate 8 is set to 0.1 [mm] to 0.5 [mm], so that the thickness T due to thermal expansion is increased. Since the influence of the stress applied to the bump electrode 2 of the mounted semiconductor element 1 can be suppressed, the reliability of flip-chip mounting can be improved.

Next, the semiconductor device shown in FIG. 2 is different from the semiconductor device shown in FIG. 1 in that the height of the resin portion 9 is different from that of the semiconductor device shown in FIG. The heat dissipating member 11 is provided by the adhesive 10.

According to the structure of this embodiment, the heat radiating member 11 can receive the heat generated from the semiconductor element 1 from the back surface of the semiconductor element 1 and the carrier substrate 8 and radiate the heat to the outside. Deterioration and poor characteristics can be prevented.

Further, as shown in FIG. 2, since the surface and the side surface of the protruding electrode 2 of the semiconductor element 1 are surrounded by the resin portion 9, heat generated from the semiconductor element 1 is conducted to the carrier substrate 8 side. Thus, the heat radiating member 11 can efficiently radiate heat to the outside.

Next, the method of manufacturing a semiconductor device according to the present invention mainly includes a method of manufacturing a semiconductor device in which an electrode pad of a semiconductor element and an electrode on a carrier substrate are connected via a film-like resin. As a concave portion having a vertical step portion and a carrier substrate having electrodes corresponding to the electrode pads of the semiconductor element in the concave portion, the concave portion of the carrier substrate had the same area as the bottom area of the concave portion. The resin film is placed, and the surface of the semiconductor element on which the electrode pads are formed is pressed against the concave portion of the carrier substrate on which the resin film is placed, and the electrode pads of the semiconductor element are connected to the electrodes on the carrier substrate. It is the main purpose.

Hereinafter, an embodiment of a method of manufacturing a semiconductor device according to the present invention will be described with reference to the drawings.

FIGS. 3 to 7 are sectional views showing a method for manufacturing the semiconductor device of the present embodiment.

First, as shown in FIG. 3, a semiconductor element 1 to be flip-chip mounted on a substrate is prepared, and projecting electrodes 2 (not shown) are formed on a plurality of electrode pads (not shown) on the semiconductor element 1. (Bump) is formed. In this step, bump leveling is further performed to make the height of the top of the protruding electrode 2 uniform, and in this leveling, the height of the protruding electrode 2 is increased by leveling using a flat plate jig. The level is adjusted to about 50 [μm].

Next, as shown in FIG. 4, a concave portion 7 having a structure in which a step portion is perpendicular to the upper surface, a wiring electrode corresponding to the electrode pad of the semiconductor element in the concave portion 7, and a wiring electrode on the bottom surface. A carrier substrate 8 having an external electrode 3 connected by a via hole inside the substrate and a position recognition mark 6 provided near a diagonal portion of a concave portion 7 on the upper surface of the substrate is prepared. The resin film 5 having the same area and the same shape as the bottom area of the recess 7 is placed. In the present embodiment, since the resin film 5 having the same area as the recess 7 and having a similar shape to the semiconductor element to be mounted is used,
The positioning of the resin film 5 is performed in a self-aligned manner, the variation in positioning accuracy can be suppressed, and the resin (resin film) that escapes outward when pressed when the semiconductor element / carrier substrate is connected can be made uniform. The resin film 5 placed here is an insulating resin film containing an epoxy resin as a main component, and has a thickness of 40 [μm].
The sheet may be about 100 [μm] depending on the depth (step) of the concave portion 7 of the carrier substrate 8 and the desired covering area of the side end face of the semiconductor element.

Next, as shown in FIG. 5, the surface of the semiconductor element 1 on which the protruding electrodes 2 are formed is positioned with respect to the concave portion 7 of the carrier substrate 8 on which the resin film 5 is mounted, by using the position recognition mark 6 arranged. After the alignment, press the semiconductor element 1
Are connected to the electrodes on the upper surface of the carrier substrate 8. This step is performed under a heating condition, and when the carrier substrate 8 is a ceramic substrate, 220
[° C.], and 180 ° C. when the carrier substrate 8 is a resin substrate, and the pressing time for the connection is 2 ° C.
It is several tens [sec] of about 0 [sec].

As shown in FIG. 6, when the semiconductor element 1 is pressed against the carrier substrate 8 with the resin film 5 interposed in the pressing for connection, the carrier substrate 8 side is heated. The resin film 5 is softened, and the resin spreads by pressing and escapes outward (arrow A). In the process of escaping to the outside, the resin
Filling the recess 7 by abutting against the vertical wall of
At the boundary between the concave portion 7 and the carrier substrate 8, it stays due to its surface tension and does not protrude. If the resin film 5 having an excessive thickness is used, the resin may run out of the recess 7. Therefore, an appropriate thickness of the resin film is used as appropriate.

Accordingly, as shown in FIG. 7, a concave portion 7 having a structure in which a step portion is perpendicular to the upper surface, a wiring electrode (not shown) on the surface within the concave portion, and the wiring electrode and the substrate on the bottom surface. A carrier substrate 8 having an external electrode 3 connected by an internal via hole and a position recognition mark 6 provided in the vicinity of a diagonal portion of the concave portion 7 on the upper surface of the substrate, and placed on the concave portion 7 of the carrier substrate; A semiconductor element 1 in which a wiring electrode of a substrate and an electrode pad on its main surface are connected via a protruding electrode 2
And a resin portion 9 provided between the semiconductor element 1 and the concave portion 7 of the carrier substrate 8 to obtain a flip-chip mounting type semiconductor device.

As shown in FIGS. 8 and 9, the semiconductor device obtained by the method for manufacturing a semiconductor device according to the present embodiment can reliably and reliably prevent the resin 9 between the semiconductor element 1 and the carrier substrate 8 from protruding. This is a semiconductor device that is formed uniformly and prevents deterioration in adhesive strength between the two. Since the carrier substrate 8 has a configuration capable of suppressing excess protrusion, the position recognition mark 6 can be arranged on the substrate near the diagonal of the concave portion 7, and the carrier substrate 8 is made unnecessarily large. No need. FIG. 8 is a plan view showing the semiconductor device of the present embodiment, and FIG.
It is sectional drawing of -A1 location.

In the present embodiment, a plurality of external electrodes, which are lands for external connection, are formed on the bottom surface of the carrier substrate, and wiring electrodes electrically connected to the external electrodes by internal vias are formed on the surface thereof. The carrier board may be a mother mounting board such as a printed board.

As described above, in the semiconductor device of the present embodiment, since the resin portion is interposed in the recess so as to be housed therein, the resin between the semiconductor element and the carrier substrate is reliably formed by suppressing excess protrusion, and the resin is formed between the semiconductor element and the carrier substrate. Semiconductor device in which deterioration of the adhesive strength of the semiconductor device is prevented. In addition, since the position recognition mark can be arranged in the concave portion, that is, in the vicinity of the region where the semiconductor element is mounted, the size of the substrate can be suppressed and a small semiconductor device can be realized.

Further, in the method of manufacturing a semiconductor device, a resin film having a similar shape which is equal to or smaller than the bottom area of the concave portion, is equal to or larger than the area of the semiconductor element, and is mounted on the concave portion of the carrier substrate. In addition, positioning is performed in a self-alignment manner, variation in positioning accuracy is suppressed, and the resin film that escapes outward even when pressed when the semiconductor element / carrier substrate is connected can be made uniform.

[0044]

As described above, the semiconductor device according to the present invention is a semiconductor device in which the resin between the semiconductor element and the carrier substrate is reliably formed by suppressing excess protrusion, and deterioration of the adhesive strength between the two is prevented. Further, the present invention is a semiconductor device in which a resin is interposed between a semiconductor element and a carrier substrate with high positional accuracy.

Further, according to the method of manufacturing a semiconductor device of the present invention, a resin film having a similar shape that is equal to or smaller than the area of the bottom of the recess, is equal to or larger than the area of the semiconductor element and is larger than the area of the semiconductor element is placed in the recess of the carrier substrate. Therefore, positioning is performed in a self-alignment manner, variation in positioning accuracy can be suppressed, and a resin film that escapes outward even when pressed when the semiconductor element / carrier substrate is connected can be made uniform. Therefore, it is possible to prevent the deterioration of the adhesive strength between the semiconductor element and the carrier substrate, and to realize a semiconductor device in which a resin is interposed between the semiconductor element and the carrier substrate with high positional accuracy. Furthermore, since the resin does not protrude from the concave portion, even if the recognition mark is arranged near the diagonal of the concave portion of the substrate, the recognition mark is not covered with the resin, so that the carrier substrate does not need to be made larger than necessary. Miniaturization can be realized.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a semiconductor device according to one embodiment of the present invention;

FIG. 3 is a sectional view showing a semiconductor device according to one embodiment of the present invention;

FIG. 4 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 5 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 6 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 7 is a sectional view showing the method of manufacturing the semiconductor device according to one embodiment of the present invention;

FIG. 8 is a plan view showing a semiconductor device according to one embodiment of the present invention;

FIG. 9 is a sectional view showing a semiconductor device according to one embodiment of the present invention;

FIG. 10 is a sectional view showing a conventional method for manufacturing a semiconductor device.

FIG. 11 is a sectional view showing a conventional method for manufacturing a semiconductor device.

FIG. 12 is a sectional view showing a conventional method for manufacturing a semiconductor device.

FIG. 13 is a sectional view showing a conventional method for manufacturing a semiconductor device.

FIG. 14 is a plan view showing a problem of a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Protruding electrode 3 External electrode 4 Carrier board 5 Resin film 6 Position recognition mark 7 Depression 8 Carrier board 9 Resin part 10 Heat dissipation adhesive 11 Heat dissipation member

Claims (4)

[Claims] A carrier substrate having a concave portion having a vertical step portion on an upper surface, a wiring electrode on a surface in the concave portion, and an external electrode on a bottom surface connected to the wiring electrode by a via hole in the substrate; A semiconductor element mounted on the concave portion of the carrier substrate, wherein the wiring electrode and an electrode pad on the main surface thereof are connected via a protruding electrode; and a semiconductor element is provided between the semiconductor element and the concave portion of the carrier substrate. And a position recognition mark provided near a diagonal portion of the recess on the upper surface of the carrier substrate. 2. The semiconductor device according to claim 1, wherein a heat radiating plate is provided between the surface of the semiconductor element and the upper surface of the carrier substrate via a heat radiating adhesive. Forming a protruding electrode on the electrode pad of the semiconductor device, a concave portion having a vertical step on the upper surface, an electrode corresponding to the electrode pad of the semiconductor device in the concave portion, and the electrode on the bottom surface. Preparing a carrier substrate having an external electrode connected by a via hole inside the substrate and a position recognition mark provided near a diagonal portion of the recess on the upper surface of the substrate; and Mounting a resin film having an area equal to the bottom area of the concave portion, and recognizing the position of the surface of the semiconductor element on which the protruding electrode is formed with respect to the concave portion of the carrier substrate on which the resin film is mounted. Aligning with the mark;
The surface of the semiconductor element on which the protruding electrodes are formed is pressed against a concave portion of the carrier substrate on which a resin film is mounted, and the protruding electrodes of the semiconductor element are connected to the electrodes on the upper surface of the carrier substrate. A method of manufacturing a semiconductor device, comprising the steps of: 4. A surface of the semiconductor element on which the projecting electrodes are formed is pressed against a concave portion of the carrier substrate on which the resin film is mounted, and the projecting electrodes of the semiconductor element and the electrodes on the upper surface of the carrier substrate are contacted. 4. The method according to claim 3, wherein the connecting step is performed under a heating condition.