JP2001015460A5 - - Google Patents

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Publication number
JP2001015460A5
JP2001015460A5 JP1999186990A JP18699099A JP2001015460A5 JP 2001015460 A5 JP2001015460 A5 JP 2001015460A5 JP 1999186990 A JP1999186990 A JP 1999186990A JP 18699099 A JP18699099 A JP 18699099A JP 2001015460 A5 JP2001015460 A5 JP 2001015460A5
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JP
Japan
Prior art keywords
polishing
polishing step
film
manufacturing
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999186990A
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English (en)
Japanese (ja)
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JP2001015460A (ja
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Publication date
Application filed filed Critical
Priority to JP11186990A priority Critical patent/JP2001015460A/ja
Priority claimed from JP11186990A external-priority patent/JP2001015460A/ja
Priority to US09/606,149 priority patent/US6429134B1/en
Publication of JP2001015460A publication Critical patent/JP2001015460A/ja
Publication of JP2001015460A5 publication Critical patent/JP2001015460A5/ja
Pending legal-status Critical Current

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JP11186990A 1999-06-30 1999-06-30 半導体装置の製造方法 Pending JP2001015460A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11186990A JP2001015460A (ja) 1999-06-30 1999-06-30 半導体装置の製造方法
US09/606,149 US6429134B1 (en) 1999-06-30 2000-06-29 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11186990A JP2001015460A (ja) 1999-06-30 1999-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2001015460A JP2001015460A (ja) 2001-01-19
JP2001015460A5 true JP2001015460A5 (enExample) 2006-06-22

Family

ID=16198284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11186990A Pending JP2001015460A (ja) 1999-06-30 1999-06-30 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US6429134B1 (enExample)
JP (1) JP2001015460A (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003001559A (ja) * 2001-06-21 2003-01-08 Mitsubishi Electric Corp 化学的機械研磨方法、化学的機械研磨装置およびスラリー供給装置
JP3639229B2 (ja) * 2001-07-17 2005-04-20 松下電器産業株式会社 堆積膜の平坦化方法
KR100467803B1 (ko) * 2002-07-23 2005-01-24 동부아남반도체 주식회사 반도체 소자 제조 방법
JP3860528B2 (ja) 2002-11-12 2006-12-20 株式会社東芝 半導体装置の製造方法
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
JP2005001018A (ja) * 2003-06-09 2005-01-06 Kao Corp 基板の製造方法
JP4986099B2 (ja) * 2003-06-09 2012-07-25 花王株式会社 基板の製造方法
US7109117B2 (en) * 2004-01-14 2006-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for chemical mechanical polishing of a shallow trench isolation structure
KR100614773B1 (ko) * 2004-12-28 2006-08-22 삼성전자주식회사 화학 기계적 연마 방법
KR100607763B1 (ko) * 2004-12-29 2006-08-01 동부일렉트로닉스 주식회사 두 단계의 절연막 연마 공정을 포함하는 반도체 제조 방법
JP4499613B2 (ja) * 2005-05-27 2010-07-07 富士通マイクロエレクトロニクス株式会社 絶縁膜の研磨方法
US7544618B2 (en) * 2006-05-18 2009-06-09 Macronix International Co., Ltd. Two-step chemical mechanical polishing process
US7720562B2 (en) * 2006-11-08 2010-05-18 Ebara Corporation Polishing method and polishing apparatus
WO2008072300A1 (ja) * 2006-12-11 2008-06-19 Renesas Technology Corp. 半導体装置の製造方法、およびウェハの研磨方法
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
JP4696086B2 (ja) * 2007-02-20 2011-06-08 信越半導体株式会社 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ
US7833893B2 (en) * 2007-07-10 2010-11-16 International Business Machines Corporation Method for forming conductive structures
JP4489108B2 (ja) * 2007-09-13 2010-06-23 株式会社東芝 半導体装置の製造方法
JP2010161114A (ja) * 2009-01-06 2010-07-22 Shin Etsu Handotai Co Ltd 半導体素子の製造方法
JP2011176342A (ja) * 2011-04-11 2011-09-08 Ebara Corp 研磨方法及び配線形成方法
US8569888B2 (en) 2011-05-24 2013-10-29 International Business Machines Corporation Wiring structure and method of forming the structure
KR101673692B1 (ko) * 2014-11-07 2016-11-07 현대자동차주식회사 건식 실리카 입자를 포함하는 상변이 현탁 유체 조성물 및 이의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665202A (en) * 1995-11-24 1997-09-09 Motorola, Inc. Multi-step planarization process using polishing at two different pad pressures
JPH10128655A (ja) 1996-10-31 1998-05-19 Toshiba Corp 研磨装置
US5985748A (en) * 1997-12-01 1999-11-16 Motorola, Inc. Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process
US6106662A (en) * 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6276987B1 (en) * 1998-08-04 2001-08-21 International Business Machines Corporation Chemical mechanical polishing endpoint process control
JP3161425B2 (ja) * 1998-09-09 2001-04-25 日本電気株式会社 Ｓｔｉの形成方法
US6165052A (en) * 1998-11-16 2000-12-26 Taiwan Semiconductor Manufacturing Company Method and apparatus for chemical/mechanical planarization (CMP) of a semiconductor substrate having shallow trench isolation
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys

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