JP2001013686A5

JP2001013686A5 -

Info

Publication number: JP2001013686A5
Application number: JP1999186607A
Authority: JP
Filing date: 1999-06-30
Publication date: 2005-07-07
Anticipated expiration: 2019-06-30

Claims

(A) a compound that generates an acid upon irradiation with actinic rays or radiation,
(B) (a) a repeating unit having an alkali-soluble group protected with at least one group selected from groups containing an alicyclic hydrocarbon structure represented by the following general formulas (pI) to (pVI); b) a repeating unit represented by the following general formula (II), and (c) at least one of repeating units represented by the following general formulas (III-a) to (III-d), A resin which decomposes by action and increases the solubility in alkali, and (c) (1) propylene glycol monomethyl ether acetate or propylene glycol monomethyl ether propionate;
(2) A positive photoresist composition for far ultraviolet exposure, comprising a mixed solvent containing at least one of ethyl lactate, propylene glycol monomethyl ether and ethoxyethyl propionate.

In general formulas (pI) to (pVI);
R ₁₁ represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group, and Z forms an alicyclic hydrocarbon group together with a carbon atom. Represents the necessary atomic group.
R _{12 to} R ₁₆ each independently represents a linear or branched alkyl group or alicyclic hydrocarbon group having 1 to 4 carbon atoms, provided that at least one of R _{12 to} R ₁₄ , or Either R ₁₅ or R ₁₆ represents an alicyclic hydrocarbon group.
R _{17 to} R ₂₁ each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or an alicyclic hydrocarbon group, provided that at least one of R _{17 to} R ₂₁ Represents an alicyclic hydrocarbon group. Further, either R ₁₉ or R ₂₁ represents a linear or branched alkyl group or alicyclic hydrocarbon group having 1 to 4 carbon atoms.
R _{22 to} R ₂₅ each independently represents a linear or branched alkyl group or alicyclic hydrocarbon group having 1 to 4 carbon atoms, provided that at least one of R _{22 to} R ₂₅ is a fatty acid. Represents a cyclic hydrocarbon group.

In general formula (II);
R1 represents a hydrogen atom, a halogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms. X1 represents a divalent linking group.
Lc represents a lactone group.

In the above formula, R1 represents a hydrogen atom, a halogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms. R30 to R37 each independently represent a hydrogen atom or an alkyl group which may have a substituent.
R represents a hydrogen atom or an alkyl group, cyclic alkyl group, aryl group or aralkyl group which may have a substituent. m represents an integer of 1 to 10.
X2 is a single bond or an optionally substituted alkylene group, cyclic alkylene group, arylene group or ether group, thioether group, carbonyl group, ester group, amide group, sulfonamide group, urethane group, The divalent group selected from the group consisting of urea groups alone or a combination of at least two of these groups and not decomposed by the action of an acid.
Z1 represents a single bond, an ether group, an ester group, an amide group, an alkylene group, or a divalent group obtained by combining these. R38 represents a single bond, an alkylene group, an arylene group, or a divalent group obtained by combining these. R40 represents an alkylene group, an arylene group, or a divalent group obtained by combining these. R39 represents an alkyl group, cyclic alkyl group, aryl group or aralkyl group which may have a substituent. R41 represents a hydrogen atom or an optionally substituted alkyl group, cyclic alkyl group, alkenyl group, aryl group or aralkyl group.
A represents any of the functional groups shown below.

(D) The positive photoresist composition for deep ultraviolet exposure according to claim 1, which comprises an organic basic compound.

(E) The positive photoresist composition for far ultraviolet exposure according to claim 1 or 2, further comprising a fluorine-based and / or silicon-based surfactant.

A pattern forming method comprising: forming a positive photoresist film from the positive photoresist composition for deep ultraviolet exposure according to claim 1; and exposing and developing the positive photoresist film. .