JP2001042533A5 - - Google Patents
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- JP2001042533A5 JP2001042533A5 JP1999211368A JP21136899A JP2001042533A5 JP 2001042533 A5 JP2001042533 A5 JP 2001042533A5 JP 1999211368 A JP1999211368 A JP 1999211368A JP 21136899 A JP21136899 A JP 21136899A JP 2001042533 A5 JP2001042533 A5 JP 2001042533A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- positive photoresist
- solvent
- ultraviolet exposure
- photoresist composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002904 solvent Substances 0.000 claims 9
- 229920002120 photoresistant polymer Polymers 0.000 claims 7
- 125000004432 carbon atoms Chemical group C* 0.000 claims 3
- 125000002723 alicyclic group Chemical group 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims 1
- DOVZUKKPYKRVIK-UHFFFAOYSA-N 1-methoxypropan-2-yl propanoate Chemical compound CCC(=O)OC(C)COC DOVZUKKPYKRVIK-UHFFFAOYSA-N 0.000 claims 1
- BYVKCQBOHJQWIO-UHFFFAOYSA-N 2-ethoxyethyl propanoate Chemical compound CCOCCOC(=O)CC BYVKCQBOHJQWIO-UHFFFAOYSA-N 0.000 claims 1
- LZCLXQDLBQLTDK-UHFFFAOYSA-N Ethyl lactate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 claims 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N Propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N Propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 229940116333 ethyl lactate Drugs 0.000 claims 1
- 125000004435 hydrogen atoms Chemical group [H]* 0.000 claims 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N γ-lactone 4-hydroxy-butyric acid Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims 1
Claims (5)
（ハ）（１）プロピレングリコールモノメチルエーテルアセテート及びプロピレングリコールモノメチルエーテルプロピオネートの群から選択される溶剤を少なくとも一つを含有する溶剤、
を含有することを特徴とする遠紫外線露光用ポジ型フォトレジスト組成物。
Ｒ1は、メチル基、エチル基、ｎ−プロピル基、イソプロピル基、ｎ−ブチル基、イソブチル基又はｓｅｃ−ブチル基を表し、ＺAは、炭素原子とともに脂環式炭化水素基を形成するのに必要な原子団を表す。
Ｒ2〜Ｒ3は、各々独立に、炭素数１〜４個の、直鎖もしくは分岐のアルキル基を表し、ＺBは、２価もしくは３価の脂環式炭化水素基を表す。
ａ、ｂは各々独立に１または２を表す。(A) a compound that generates an acid upon irradiation with actinic rays or radiation, and (b) a group selected from the group of groups containing an alicyclic hydrocarbon structure represented by the following general formulas (I) and (II) And (c) at least one solvent selected from the group consisting of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether propionate. A solvent containing,
A positive photoresist composition for deep ultraviolet exposure, comprising:
R 1 represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group, and Z A forms an alicyclic hydrocarbon group together with a carbon atom. Represents the atomic group necessary for.
R 2 to R 3 each independently represents a linear or branched alkyl group having 1 to 4 carbon atoms, and Z B represents a divalent or trivalent alicyclic hydrocarbon group.
a and b each independently represent 1 or 2;
を含有することを特徴とする請求項１に記載の遠紫外線露光用ポジ型フォトレジスト組成物。The solvent of [c] further comprises (2) a solvent containing at least one solvent selected from the group consisting of ethyl lactate, propylene glycol monomethyl ether and ethoxyethyl propionate. A positive photoresist composition for deep ultraviolet exposure described in 1.
を含有することを特徴とする請求項１または２に記載の遠紫外線露光用ポジ型フォトレジスト組成物。3. The solvent according to claim 1, wherein the solvent [c] further comprises (3) a solvent containing at least one solvent selected from the group consisting of γ-butyrolactone, ethylene carbonate, and propylene carbonate. A positive photoresist composition for far ultraviolet exposure.
ことを特徴とする請求項１〜３のいずれかに記載の遠紫外線露光用ポジ型フォトレジスト組成物。
Ｒａ〜Ｒｅは各々独立に、水素原子、炭素数１〜４個のアルキル基を表す。ｍ、ｎは、各々独立に０から３の整数を表し、ｍ＋ｎは、２以上６以下である。The positive photoresist for far ultraviolet exposure according to any one of claims 1 to 3, wherein the resin (b) further contains a repeating unit having a group represented by the following general formula (III): Composition.
Ra to Re each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. m and n each independently represents an integer of 0 to 3, and m + n is 2 or more and 6 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21136899A JP3929648B2 (en) | 1999-07-26 | 1999-07-26 | Positive photoresist composition for deep ultraviolet exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21136899A JP3929648B2 (en) | 1999-07-26 | 1999-07-26 | Positive photoresist composition for deep ultraviolet exposure |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001042533A JP2001042533A (en) | 2001-02-16 |
| JP2001042533A5 true JP2001042533A5 (en) | 2005-07-07 |
| JP3929648B2 JP3929648B2 (en) | 2007-06-13 |
Family
ID=16604818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21136899A Expired - Fee Related JP3929648B2 (en) | 1999-07-26 | 1999-07-26 | Positive photoresist composition for deep ultraviolet exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3929648B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7244542B2 (en) * | 2002-05-30 | 2007-07-17 | Shipley Company, L.L.C. | Resins and photoresist compositions comprising same |
| JP2007101715A (en) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | Pattern forming method and resist composition used therefor |
| JP4954576B2 (en) * | 2006-03-15 | 2012-06-20 | 東京応化工業株式会社 | Thick film resist laminate, manufacturing method thereof, and resist pattern forming method |
| JP2010102336A (en) * | 2008-09-29 | 2010-05-06 | Fujifilm Corp | Pattern forming method |
| JP5277022B2 (en) * | 2009-02-26 | 2013-08-28 | 富士フイルム株式会社 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition |
| JP5427436B2 (en) * | 2009-02-26 | 2014-02-26 | 富士フイルム株式会社 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition |
| JP5537829B2 (en) * | 2009-03-31 | 2014-07-02 | 富士フイルム株式会社 | Actinic ray-sensitive or radiation-sensitive resin composition, and pattern formation method using the composition |
| JP6020361B2 (en) * | 2012-06-26 | 2016-11-02 | 信越化学工業株式会社 | Polymer compound, positive resist material, and pattern forming method using the same |
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1999
- 1999-07-26 JP JP21136899A patent/JP3929648B2/en not_active Expired - Fee Related