JP2001042533A5 - - Google Patents

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Publication number
JP2001042533A5
JP2001042533A5 JP1999211368A JP21136899A JP2001042533A5 JP 2001042533 A5 JP2001042533 A5 JP 2001042533A5 JP 1999211368 A JP1999211368 A JP 1999211368A JP 21136899 A JP21136899 A JP 21136899A JP 2001042533 A5 JP2001042533 A5 JP 2001042533A5
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Prior art keywords
group
positive photoresist
solvent
ultraviolet exposure
photoresist composition
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JP1999211368A
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Japanese (ja)
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JP3929648B2 (en
JP2001042533A (en
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Priority to JP21136899A priority Critical patent/JP3929648B2/en
Priority claimed from JP21136899A external-priority patent/JP3929648B2/en
Publication of JP2001042533A publication Critical patent/JP2001042533A/en
Publication of JP2001042533A5 publication Critical patent/JP2001042533A5/ja
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Publication of JP3929648B2 publication Critical patent/JP3929648B2/en
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Claims (5)

(イ)活性光線又は放射線の照射により酸を発生する化合物、ならびに(ロ)下記一般式(I)及び(II)で表される脂環式炭化水素構造を含む基の群から選択される基を少なくとも1つ含み、酸の作用によりアルカリに対する溶解性が増加する樹脂、並びに
(ハ)(1)プロピレングリコールモノメチルエーテルアセテート及びプロピレングリコールモノメチルエーテルプロピオネートの群から選択される溶剤を少なくとも一つを含有する溶剤、
を含有することを特徴とする遠紫外線露光用ポジ型フォトレジスト組成物。
Figure 2001042533
一般式(I)及び(II)中;
1は、メチル基、エチル基、n−プロピル基、イソプロピル基、n−ブチル基、イソブチル基又はsec−ブチル基を表し、ZAは、炭素原子とともに脂環式炭化水素基を形成するのに必要な原子団を表す。
2〜R3は、各々独立に、炭素数1〜4個の、直鎖もしくは分岐のアルキル基を表し、ZBは、2価もしくは3価の脂環式炭化水素基を表す。
a、bは各々独立に1または2を表す。
(A) a compound that generates an acid upon irradiation with actinic rays or radiation, and (b) a group selected from the group of groups containing an alicyclic hydrocarbon structure represented by the following general formulas (I) and (II) And (c) at least one solvent selected from the group consisting of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether propionate. A solvent containing,
A positive photoresist composition for deep ultraviolet exposure, comprising:
Figure 2001042533
In general formulas (I) and (II);
R 1 represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group, and Z A forms an alicyclic hydrocarbon group together with a carbon atom. Represents the atomic group necessary for.
R 2 to R 3 each independently represents a linear or branched alkyl group having 1 to 4 carbon atoms, and Z B represents a divalent or trivalent alicyclic hydrocarbon group.
a and b each independently represent 1 or 2;
前記〔ハ〕の溶剤が、更に(2)乳酸エチル、プロピレングリコールモノメチルエーテル及びエトキシエチルプロピオネートの群から選択される溶剤を少なくとも一つ含有する溶剤
を含有することを特徴とする請求項1に記載の遠紫外線露光用ポジ型フォトレジスト組成物。
The solvent of [c] further comprises (2) a solvent containing at least one solvent selected from the group consisting of ethyl lactate, propylene glycol monomethyl ether and ethoxyethyl propionate. A positive photoresist composition for deep ultraviolet exposure described in 1.
前記〔ハ〕の溶剤が、更に(3)γ−ブチロラクトン、エチレンカーボネート及びプロピレンカーボネートの群から選択される溶剤を少なくとも一つ含有する溶剤
を含有することを特徴とする請求項1または2に記載の遠紫外線露光用ポジ型フォトレジスト組成物。
3. The solvent according to claim 1, wherein the solvent [c] further comprises (3) a solvent containing at least one solvent selected from the group consisting of γ-butyrolactone, ethylene carbonate, and propylene carbonate. A positive photoresist composition for far ultraviolet exposure.
前記〔ロ〕の樹脂が、更に下記一般式(III)で示される基を有する繰り返し単位を含有する
ことを特徴とする請求項1〜3のいずれかに記載の遠紫外線露光用ポジ型フォトレジスト組成物。
Figure 2001042533
一般式(III)中;
Ra〜Reは各々独立に、水素原子、炭素数1〜4個のアルキル基を表す。m、nは、各々独立に0から3の整数を表し、m+nは、2以上6以下である。
The positive photoresist for far ultraviolet exposure according to any one of claims 1 to 3, wherein the resin (b) further contains a repeating unit having a group represented by the following general formula (III): Composition.
Figure 2001042533
In general formula (III);
Ra to Re each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. m and n each independently represents an integer of 0 to 3, and m + n is 2 or more and 6 or less.
請求項1〜4のいずれかに記載の遠紫外線露光用ポジ型フォトレジスト組成物によりポジ型フォトレジスト膜を形成し、当該ポジ型フォトレジスト膜を露光、現像することを特徴とするパターン形成方法。A pattern forming method comprising: forming a positive photoresist film from the positive photoresist composition for deep ultraviolet exposure according to claim 1; and exposing and developing the positive photoresist film. .
JP21136899A 1999-07-26 1999-07-26 Positive photoresist composition for deep ultraviolet exposure Expired - Fee Related JP3929648B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21136899A JP3929648B2 (en) 1999-07-26 1999-07-26 Positive photoresist composition for deep ultraviolet exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21136899A JP3929648B2 (en) 1999-07-26 1999-07-26 Positive photoresist composition for deep ultraviolet exposure

Publications (3)

Publication Number Publication Date
JP2001042533A JP2001042533A (en) 2001-02-16
JP2001042533A5 true JP2001042533A5 (en) 2005-07-07
JP3929648B2 JP3929648B2 (en) 2007-06-13

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JP21136899A Expired - Fee Related JP3929648B2 (en) 1999-07-26 1999-07-26 Positive photoresist composition for deep ultraviolet exposure

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JP (1) JP3929648B2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7244542B2 (en) * 2002-05-30 2007-07-17 Shipley Company, L.L.C. Resins and photoresist compositions comprising same
JP2007101715A (en) * 2005-09-30 2007-04-19 Fujifilm Corp Pattern forming method and resist composition used therefor
JP4954576B2 (en) * 2006-03-15 2012-06-20 東京応化工業株式会社 Thick film resist laminate, manufacturing method thereof, and resist pattern forming method
JP2010102336A (en) * 2008-09-29 2010-05-06 Fujifilm Corp Pattern forming method
JP5277022B2 (en) * 2009-02-26 2013-08-28 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition
JP5427436B2 (en) * 2009-02-26 2014-02-26 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition
JP5537829B2 (en) * 2009-03-31 2014-07-02 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, and pattern formation method using the composition
JP6020361B2 (en) * 2012-06-26 2016-11-02 信越化学工業株式会社 Polymer compound, positive resist material, and pattern forming method using the same

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