JP2000507050A - 電子デバイス及びその製造方法 - Google Patents
電子デバイス及びその製造方法Info
- Publication number
- JP2000507050A JP2000507050A JP10527486A JP52748698A JP2000507050A JP 2000507050 A JP2000507050 A JP 2000507050A JP 10527486 A JP10527486 A JP 10527486A JP 52748698 A JP52748698 A JP 52748698A JP 2000507050 A JP2000507050 A JP 2000507050A
- Authority
- JP
- Japan
- Prior art keywords
- source
- silicon film
- drain
- silicide
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 75
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 55
- 239000010703 silicon Substances 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011159 matrix material Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 239000011651 chromium Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Absorbent Articles And Supports Therefor (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. 薄膜トランジスタを具えている電子デバイスを製造する方法であって: (a)基板上にソース及びドレイン用の電極パターンを形成する工程と、 (b)前記トランジスタのチャネル領域を含むトランジスタ本体を形成する ために前記ソース及びドレイン電極パターンの上にシリコン膜を堆積する工程 と、 (c)前記シリコン膜の前記チャネル領域の上に絶縁ゲート構体を形成する 工程と、 (d)前記絶縁ゲート構体の上及び該絶縁ゲート構体に隣接する前記シリコ ン膜の露出した隣接領域の上にシリサイド形成金属を堆積する工程と、 (e)前記シリコン膜の隣接領域と共にシリサイドを形成すべく前記金属を 反応させる工程と、 を含む電子デバイスの製造方法において、前記絶縁ゲート構体を絶縁膜の上に 、該絶縁膜と一緒にパターン化される導電ゲートとして前記工程(c)にて形 成し、前記工程(e)の後に、選択性のエッチング剤によって未反応の金属を 前記絶縁ゲート構体から除去して、前記隣接領域に前記導電ゲートと自己整合 するソース及びドレインのシリサイド部分を残存させ、且つ前記ソース及びド レイン電極パターンと、前記ソース及びドレインの各シリサイド部分との間に 前記シリコン膜を厚さ方向に横切る電気接続部を形成することを特徴とする電 子デバイスの製造方法。 2. 前記ソース及びドレイン電極パターンと、前記ソース及びドレインの各シリ サイド部分との間における前記シリコン膜の領域を伝導性タイプのドーパント でドープして、前記シリコン膜を厚さ方向に横切る前記電気接続部の少なくと も一部を形成することを特徴とする請求の範囲1に記載の方法。 3. 前記導電性タイプのドーパントを前記ソース及びドレインの電極パターンと 、前記ソース及びドレインの各シリサイド部分との間のシリコン膜の領域内へ 導入する期間中、前記絶縁ゲート構体をマスクとして用いることを特徴とする 請求の範囲2に記載の方法。 4. 前記伝導性タイプのドーパントのイオンを前記工程(d)と(e)との間に て前記シリサイド形成金属を経て注入することを特徴とする請求の範囲3に記 載の方法。 5. 前記伝導性タイプのドーパントのイオンを前記工程(e)の後に未反応金属 を除去してから前記ソース及びドレインのシリサイド部分を経て注入すること を特徴とする請求の範囲3に記載の方法。 6. 前記ソース及びドレインの電極パターンと、前記ソース及びドレインの各シ リサイド部分との間の前記シリコン膜の領域を前記ソース及びドレインの電極 パターンから前記伝導性タイプのドーパントでドープすることを特徴とする請 求の範囲2に記載の方法。 7. 前記ソース及びドレインの電極パターンを前記トランジスタ本体の端部にて 露出させ、前記ソース及びドレインのシリサイド部分が、これらの端部の上を 前記ソース及びドレイン電極パターンに接触すべく延在して、前記シリコン膜 を厚さ方向に横切る前記電気接続部の少なくとも一部を形成することを特徴と する請求の範囲1〜6のいずれか一項に記載の方法。 8. 前記トランジスタ本体の端部にテーパを付け、これらのテーパ付き端部の上 に前記ソース及びドレインのシリサイド部分を延在させることを特徴とする請 求の範囲7に記載の方法。 9. 前記絶縁ゲート構体を前記チャネル領域の上に、前記導電ゲートと前記ソー ス及びドレイン電極パターンとの間を横方向に離間させて形成することを特徴 とする請求の範囲1〜8のいずれか一項に記載の方法。 10.前記基板上にデバイスマトリックスのスイッチング素子として前記トランジ スタを複数個形成することを特徴とする請求の範囲1に記載の方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9527486A JP2895963B2 (ja) | 1996-01-29 | 1997-01-29 | 動物用排泄物処理材及びその製造方法 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8-46552 | 1996-01-29 | ||
JP4655296 | 1996-01-29 | ||
GB9626344.7 | 1996-12-19 | ||
PCT/JP1997/000201 WO1997027739A1 (fr) | 1996-01-29 | 1997-01-29 | Materiau destine au traitement de dechets d'origine animale et procede de production de ce materiau |
JP9527486A JP2895963B2 (ja) | 1996-01-29 | 1997-01-29 | 動物用排泄物処理材及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2895963B2 JP2895963B2 (ja) | 1999-05-31 |
JP2000507050A true JP2000507050A (ja) | 2000-06-06 |
Family
ID=26386644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9527486A Expired - Lifetime JP2895963B2 (ja) | 1996-01-29 | 1997-01-29 | 動物用排泄物処理材及びその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2895963B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018019088A (ja) * | 2017-09-14 | 2018-02-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2021005719A (ja) * | 2012-01-20 | 2021-01-14 | 株式会社半導体エネルギー研究所 | 半導体装置、及び、半導体装置の作製方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3865719B2 (ja) | 2003-07-03 | 2007-01-10 | 昇太郎 望月 | 愛玩動物用排泄物処理材 |
JP5596957B2 (ja) | 2009-08-13 | 2014-09-24 | 伊藤 博 | 吸水処理材 |
-
1997
- 1997-01-29 JP JP9527486A patent/JP2895963B2/ja not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021005719A (ja) * | 2012-01-20 | 2021-01-14 | 株式会社半導体エネルギー研究所 | 半導体装置、及び、半導体装置の作製方法 |
JP2018019088A (ja) * | 2017-09-14 | 2018-02-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2895963B2 (ja) | 1999-05-31 |
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