JP2000349299A5 - - Google Patents
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- JP2000349299A5 JP2000349299A5 JP2000085444A JP2000085444A JP2000349299A5 JP 2000349299 A5 JP2000349299 A5 JP 2000349299A5 JP 2000085444 A JP2000085444 A JP 2000085444A JP 2000085444 A JP2000085444 A JP 2000085444A JP 2000349299 A5 JP2000349299 A5 JP 2000349299A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000085444A JP4850326B2 (ja) | 1999-03-26 | 2000-03-24 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-84997 | 1999-03-26 | ||
| JP8499799 | 1999-03-26 | ||
| JP1999084997 | 1999-03-26 | ||
| JP2000085444A JP4850326B2 (ja) | 1999-03-26 | 2000-03-24 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000349299A JP2000349299A (ja) | 2000-12-15 |
| JP2000349299A5 true JP2000349299A5 (ja) | 2007-06-07 |
| JP4850326B2 JP4850326B2 (ja) | 2012-01-11 |
Family
ID=26425960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000085444A Expired - Fee Related JP4850326B2 (ja) | 1999-03-26 | 2000-03-24 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4850326B2 (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG111923A1 (en) * | 2000-12-21 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| US20040227197A1 (en) | 2003-02-28 | 2004-11-18 | Shinji Maekawa | Composition of carbon nitride, thin film transistor with the composition of carbon nitride, display device with the thin film transistor, and manufacturing method thereof |
| JP4467901B2 (ja) * | 2003-03-28 | 2010-05-26 | シャープ株式会社 | 薄膜トランジスタ装置の製造方法 |
| JP5236903B2 (ja) * | 2006-06-29 | 2013-07-17 | 株式会社半導体エネルギー研究所 | 表示装置及び表示装置の作製方法 |
| US7781768B2 (en) | 2006-06-29 | 2010-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device, method for manufacturing the same, and electronic device having the same |
| KR101773641B1 (ko) | 2010-01-22 | 2017-09-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI670711B (zh) | 2010-09-14 | 2019-09-01 | 日商半導體能源研究所股份有限公司 | 記憶體裝置和半導體裝置 |
| US9171840B2 (en) * | 2011-05-26 | 2015-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2509175B2 (ja) * | 1985-03-20 | 1996-06-19 | 株式会社日立製作所 | 配線構造体の製造方法 |
| JPS6466980A (en) * | 1987-09-08 | 1989-03-13 | Seiko Epson Corp | Superconducting transistor |
| JP2660451B2 (ja) * | 1990-11-19 | 1997-10-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP3516166B2 (ja) * | 1992-09-14 | 2004-04-05 | カシオ計算機株式会社 | 薄膜トランジスタの製造方法 |
| JPH09260600A (ja) * | 1996-03-19 | 1997-10-03 | Sharp Corp | 半導体メモリ素子の製造方法 |
| JPH10240164A (ja) * | 1997-03-03 | 1998-09-11 | Toshiba Corp | 駆動回路一体型表示装置 |
| JPH1065181A (ja) * | 1997-04-04 | 1998-03-06 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
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2000
- 2000-03-24 JP JP2000085444A patent/JP4850326B2/ja not_active Expired - Fee Related