JP2000340698A - Substrate for leadless chip carrier and leadless chip carrier - Google Patents

Substrate for leadless chip carrier and leadless chip carrier

Info

Publication number
JP2000340698A
JP2000340698A JP15320199A JP15320199A JP2000340698A JP 2000340698 A JP2000340698 A JP 2000340698A JP 15320199 A JP15320199 A JP 15320199A JP 15320199 A JP15320199 A JP 15320199A JP 2000340698 A JP2000340698 A JP 2000340698A
Authority
JP
Japan
Prior art keywords
substrate
chip carrier
hole
holes
leadless chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15320199A
Other languages
Japanese (ja)
Other versions
JP4060989B2 (en
Inventor
Hiroyuki Kurata
博之 倉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Japan Radio Co Ltd
Original Assignee
New Japan Radio Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Japan Radio Co Ltd filed Critical New Japan Radio Co Ltd
Priority to JP15320199A priority Critical patent/JP4060989B2/en
Publication of JP2000340698A publication Critical patent/JP2000340698A/en
Application granted granted Critical
Publication of JP4060989B2 publication Critical patent/JP4060989B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a substrate for a package which can increase manufacturing yield, without using expensive inspection devices. SOLUTION: A substrate for a leadless chip carrier, which is formed with a conductor pattern 5a to mount a plurality of chips and is also formed with a through-hole 3 as an interconnection has a multilayer structure wherein an upper layer substrate 1 formed with a via hole 4 connected to the conductor pattern 5a and a lower layer substrate 2, formed with a conductor pattern 5b connected to a blind via 4 and a through-hole 3 connected to the conductor pattern 5b are stacked and joined. Through-holes 7, 10, 17 are formed so as to communicate with a frame section which does not constitute a part of the leadless chip carrier.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、積層構造のリード
レスチップキャリア(Leadless Chip Carrier以下、L
CCと略称する)用基板に関し、特に歩留まりを向上す
ることのできるものに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a leadless chip carrier (hereinafter referred to as L) having a laminated structure.
And more particularly, to a substrate capable of improving the yield.

【0002】[0002]

【従来の技術】半導体装置の動作速度の向上に従い、半
導体チップ(以下チップと略称する)を搭載するパッケ
ージについても、伝送信号ロスの減少や信号伝播速度の
向上が求められている。このような要求に応えるものと
して、従来から、図4に示すようなランドグリッドアレ
イ(Land Grid Array 以下、LGAと略称する)構造
のパッケージや図5に示すようなLCC構造のパッケー
ジが提供されている。
2. Description of the Related Art As the operating speed of a semiconductor device has been improved, there has been a demand for a package on which a semiconductor chip (hereinafter abbreviated as "chip") is mounted to reduce transmission signal loss and improve signal propagation speed. To meet such demands, a package having a land grid array (hereinafter abbreviated as LGA) structure as shown in FIG. 4 and a package having an LCC structure as shown in FIG. 5 have been provided. I have.

【0003】これらの図に示すように、LGA構造で
は、チップ14のバンプ電極と実装用電極である格子状
配置のランド15がビアホール4で接続されており、L
CC構造では、チップ14のバンプ電極が基板表面の導
体パターンを介して側面の配線5cに繋がれている。な
お、11はボンディング部保護のための樹脂等の保護材
で、モールドにより被着されている。
As shown in these figures, in the LGA structure, bump electrodes of a chip 14 and lands 15 in a grid arrangement, which are mounting electrodes, are connected by via holes 4.
In the CC structure, the bump electrode of the chip 14 is connected to the wiring 5c on the side surface via a conductor pattern on the substrate surface. Reference numeral 11 denotes a protective material such as a resin for protecting the bonding portion, which is adhered by a mold.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、図4に
示したLGA構造では、複数枚の基板を積層して形成す
るが、積層する基板同士の位置ずれによって、例えば本
来接続されるはずの上層基板のビアホールと下層基板の
配線パターンがずれて電気的導通がなされない場合が生
じる。これは、特にファインピッチのものに関して顕著
になる。
However, in the LGA structure shown in FIG. 4, a plurality of substrates are laminated and formed. In some cases, the via hole and the wiring pattern of the lower substrate are displaced from each other and electrical conduction is not performed. This is particularly noticeable with fine pitch.

【0005】更に、裏面に格子状のランド15を設ける
構造のため、実装基板(図示せず)に実装後、ランド1
5と実装基板のパターンとの接続状況が目視できず、X
線装置などの高価な検査装置が必要となり、検査コスト
が上がってしまう。
[0005] Furthermore, because of the structure in which the grid-like lands 15 are provided on the back surface, the lands 1 are mounted on a mounting substrate (not shown).
5 and the pattern of the mounting board cannot be visually observed,
An expensive inspection device such as a wire device is required, and the inspection cost is increased.

【0006】一方、図5のLCC構造では、基板を積層
しないため位置ずれの問題がなく、接続状態の検査も目
視できるので、検査コストを抑えることができる。しか
し、チップを保護するためにこれを保護材11で覆った
場合、基板側面に配線5cが施された凹部13があるた
め、これを伝って樹脂が裏面に回り込む虞があった。な
お、図示の凹部13はスルーホールをダイシングやスク
ライビングにて分割して得られるものである。保護材の
一部が裏面に回り込むと、実装時に障害となることがあ
った。
On the other hand, in the LCC structure shown in FIG. 5, since the substrates are not stacked, there is no problem of displacement, and the inspection of the connection state can be visually checked, so that the inspection cost can be reduced. However, when the chip is covered with the protective material 11 to protect the chip, there is a possibility that the resin may go around the back surface through the recess 13 because the recess 13 is provided on the side surface of the substrate. The illustrated recess 13 is obtained by dividing a through hole by dicing or scribing. If a part of the protective material goes around the back surface, it may be an obstacle at the time of mounting.

【0007】また、LCC構造では、実装基板へ実装時
に、はんだフィレットが側面の電極を這い上がり、表面
のチップ実装面を濡らすことがあるため、実装後のはん
だフィレット検査時に、検査装置がパッケージ表面の一
部をはんだフィレットの一部として誤認識し、実際はは
んだが実装基板表面のパターンに拡がらずにパターンと
の接続がなされない場合であっても、良品判定してしま
うことがあった。
Also, in the LCC structure, the solder fillet may creep up on the electrode on the side surface and wet the chip mounting surface when mounting on the mounting board. Is incorrectly recognized as a part of the solder fillet, and even if the solder does not spread to the pattern on the surface of the mounting board and is not connected to the pattern, a good product may be determined.

【0008】本発明は、上記問題を解決し、実装基板へ
の実装歩留まりを向上することのできるパッケージ用基
板やパッケージを提供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a package substrate and a package which can solve the above-mentioned problems and can improve the mounting yield on a mounting substrate.

【0009】[0009]

【課題を解決するための手段】上記目的を達成するた
め、請求項1の発明に係るリードレスチップキャリア用
基板は、リードレスチップキャリアを形成する領域の少
なくとも外表面に繰り返し形成された複数の同一パター
ンからなる電子部品が搭載可能な導体パターンを有する
上層基板と、該上層基板に重畳し、外表面に前記上層基
板の導体パターンに対応しかつ実装基板と接続可能に形
成された導体パターンを有する下層基板とからなり、前
記上層基板の導体パターンと前記下層基板の導体パター
ンが内部配線により内部的に導通した積層構造のリード
レスチップキャリア用基板において、前記上層基板と前
記下層基板それぞれのリードレスチップキャリアを構成
しない枠部に、互いに連通する貫通穴が形成され、前記
上層基板の貫通穴が前記下層基板の貫通穴より大である
ことを特徴とするリードレスチップキャリア用基板。
To achieve the above object, a substrate for a leadless chip carrier according to the first aspect of the present invention includes a plurality of substrates repeatedly formed on at least an outer surface of a region for forming a leadless chip carrier. An upper layer substrate having a conductor pattern on which electronic components composed of the same pattern can be mounted, and a conductor pattern formed on the outer surface so as to correspond to the conductor pattern of the upper layer substrate and to be connectable to the mounting substrate. A leadless chip carrier substrate having a laminated structure in which a conductive pattern of the upper substrate and a conductive pattern of the lower substrate are internally conducted by internal wiring, wherein the lead of each of the upper substrate and the lower substrate is provided. A through hole communicating with each other is formed in a frame portion that does not constitute a less chip carrier, and a through hole of the upper layer substrate is formed. Substrate for leadless chip carrier, wherein the through holes of the serial underlying substrate is large.

【0010】請求項2の発明に係るリードレスチップキ
ャリア用基板は、前記内部配線が、前記上層基板および
前記下層基板に形成されたビアホールまたはスルーホー
ルと、該ビアホールまたは該スルーホール相互の接続用
導体パターンとからなり、前記下層基板の前記貫通穴周
辺に位置ずれ検出マークが設けられ、該位置ずれ検出マ
ークは前記上層基板の前記貫通穴領域に全部または一部
が露出していることを特徴とする。
According to a second aspect of the present invention, in the leadless chip carrier substrate, the internal wiring is for connecting a via hole or a through hole formed in the upper substrate and the lower substrate to the via hole or the through hole. A conductive pattern, a misregistration detection mark is provided around the through hole of the lower substrate, and the misregistration detection mark is entirely or partially exposed in the through hole region of the upper substrate. And

【0011】請求項3の発明に係るリードレスチップキ
ャリア用基板は、前記位置ズレ検出マークが、前記下層
基板の前記貫通穴を同心円状に囲むメタライズパターン
であることを特徴とする。
The leadless chip carrier substrate according to a third aspect of the present invention is characterized in that the misalignment detection mark is a metallized pattern that concentrically surrounds the through hole of the lower substrate.

【0012】請求項4の発明に係るリードレスチップキ
ャリア用基板は、前記請求項1乃至3の発明に係るリー
ドレスチップキャリア用基板のいずれかにおいて、前記
上層基板の内部配線にビアホールを含み、前記下層基板
内の内部配線にスルーホールを含むことを特徴とする。
A leadless chip carrier substrate according to a fourth aspect of the present invention is the leadless chip carrier substrate according to any one of the first to third aspects, wherein the internal wiring of the upper layer substrate includes a via hole; The internal wiring in the lower substrate includes a through hole.

【0013】請求項5の発明に係るリードレスチップキ
ャリア用基板は、請求項4の発明に係るリードレスチッ
プキャリア用基板の前記下層基板に含まれる前記スルー
ホールをチップキャリア形成領域の周辺部に配置したこ
とを特徴とする。
According to a fifth aspect of the present invention, there is provided a substrate for a leadless chip carrier, wherein the through hole included in the lower substrate of the substrate for a leadless chip carrier according to the fourth aspect of the present invention is provided in a peripheral portion of a chip carrier forming region. It is characterized by being arranged.

【0014】請求項6の発明に係るリードレスチップキ
ャリア用基板は、請求項5の発明に係るリードレスチッ
プキャリア用基板の前記スルーホールが、前記チップキ
ャリア形成領域の周辺部各辺に一列に並び、各辺の前記
スルーホールを隣り合う前記チップキャリア形成領域で
共有し、前記上層基板及び前記下層基板の前記枠部に形
成された互いに連通する前記貫通穴が、一列に並んだ前
記スルーホール毎に該スルーホールを挟み該スルーホー
ルと一列に並ぶよう1対づつ形成されていることを特徴
とする。
According to a sixth aspect of the present invention, there is provided a leadless chip carrier substrate, wherein the through holes of the leadless chip carrier substrate according to the fifth aspect of the present invention are arranged in a line on each side of a peripheral portion of the chip carrier forming region. The through-holes of each side are shared by the adjacent chip carrier forming regions, and the through-holes formed in the frame portion of the upper layer substrate and the lower layer substrate and communicating with each other are arranged in a line. Each pair is formed so as to be aligned with the through hole with the through hole interposed therebetween.

【0015】請求項7の発明に係るリードレスチップキ
ャリアは、請求項5または6に記載のリードレスチップ
キャリア用基板を切断分離してなるリードレスチップキ
ャリアであって、前記チップキャリア形成領域の周辺部
に設けた、前記スルーホールの略中心を結ぶ線に沿って
切断分離されていることを特徴とする。
A leadless chip carrier according to a seventh aspect of the present invention is a leadless chip carrier obtained by cutting and separating the leadless chip carrier substrate according to the fifth or sixth aspect, wherein It is characterized in that it is cut and separated along a line, which is provided in a peripheral portion and connects the approximate center of the through hole.

【0016】[0016]

【発明の実施の形態】以下、本発明の実施の形態を図面
に沿って説明する。なお、複数の図面にわたり同一の符
号を付したものは同一または相当するものを示す。
Embodiments of the present invention will be described below with reference to the drawings. It is to be noted that components denoted by the same reference numerals in a plurality of drawings indicate the same or corresponding components.

【0017】図1は本発明の実施の形態を示すLCC用
基板の分解斜視図であり、4個取りの例を示す。本図に
おいて、1は上層基板、2は下層基板、3はスルーホー
ル、6、7、10、16、17は貫通穴、8及び9はメ
タライズパターンを示す。
FIG. 1 is an exploded perspective view of an LCC substrate showing an embodiment of the present invention, and shows an example in which four substrates are taken. In the figure, 1 is an upper substrate, 2 is a lower substrate, 3 is a through hole, 6, 7, 10, 16, and 17 are through holes, and 8 and 9 are metallized patterns.

【0018】本図に示すように、本発明のLCC用基板
は、上層基板1と下層基板2を重畳させて接合したもの
である。それぞれの基板の原型は周知のグリーンシート
の加工やスクリーン印刷によって作られており、これら
の一体化は、重畳させたのち、焼成して行われる。
As shown in the drawing, the LCC substrate of the present invention is obtained by joining an upper substrate 1 and a lower substrate 2 so as to overlap each other. The prototype of each substrate is made by well-known green sheet processing or screen printing, and the integration of these is performed by superimposing and then firing.

【0019】上層基板1には、グリーンシート状態時に
同時に同一金型で形成されたビアホール4の穴、貫通穴
6、10、17があり、その後のスクリーン印刷により
導電ペーストが塗布されて形成された、半導体チップの
電極に接続する導体パターン5a、メタライズパターン
8及びビアホール4内の導体がある。
The upper substrate 1 has via holes 4 and through holes 6, 10, and 17 which are simultaneously formed in the same mold in a green sheet state, and is formed by applying a conductive paste by screen printing thereafter. A conductor pattern 5a connected to the electrode of the semiconductor chip, a metallized pattern 8, and a conductor in the via hole 4.

【0020】貫通穴6、10、17はダイシングされた
後にパッケージとして構成されない、基板1、2の枠部
19(余剰部)に形成されている。因みに、ダイシング
された後パッケージとして構成される部分(パッケージ
形成領域)は、スルーホール3の略中心を結ぶダイシン
グライン12で囲まれた領域である。
The through holes 6, 10 and 17 are formed in the frame portion 19 (excess portion) of the substrates 1 and 2 which are not formed as a package after dicing. Incidentally, a portion (package forming region) configured as a package after dicing is a region surrounded by a dicing line 12 connecting substantially the centers of the through holes 3.

【0021】また、このダイシングライン12は上層基
板1における貫通穴17同士を結ぶラインでもある。こ
れは、貫通穴16をパッケージ形成領域各辺に一列に並
ぶスルーホールに更に一列に並ぶよう、これらスルーホ
ールを挟んで1対ずつ形成しており、この貫通穴16に
連通するよう貫通穴17を形成してあるからである。
The dicing line 12 is a line connecting the through holes 17 in the upper substrate 1. This is because a pair of the through holes 16 is formed so as to sandwich the through holes so that the through holes 16 are further arranged in a line in each line on each side of the package forming region. Is formed.

【0022】貫通穴6の回りには同心円状に取り囲むよ
うにメタライズパターン8が形成され、貫通穴10は、
後に重畳する下層基板2の貫通穴7及びメタライズパタ
ーン9を十分に露出する程度の大きさに形成されてい
る。
A metallization pattern 8 is formed around the through hole 6 so as to surround the through hole 6 concentrically.
The through-hole 7 and the metallized pattern 9 of the lower substrate 2 to be superimposed later are formed in such a size that the metallized pattern 9 is sufficiently exposed.

【0023】下層基板1には、グリーンシート状態時に
同時に同一金型で形成されたスルーホール3の穴、貫通
穴7、16があり、その後のスクリーン印刷により導電
ペーストが塗布されて形成された、導体パターン5b、
メタライズパターン9及びスルーホール3内の導体があ
る。
The lower substrate 1 has through-holes 3 and through-holes 7 and 16 formed in the same mold at the same time in the green sheet state, and is formed by applying a conductive paste by screen printing thereafter. Conductor pattern 5b,
There are metallized patterns 9 and conductors in through holes 3.

【0024】貫通穴7、16はスルーホール3の穴と同
径に形成されており、これらもまた上層基板の貫通穴等
と同じように、基板の枠部に形成されている。そして貫
通穴7の回りには、同心円状に取り囲むようにメタライ
ズパターン9が形成されている。
The through holes 7, 16 are formed to have the same diameter as the holes of the through hole 3, and these are also formed in the frame of the substrate, like the through holes of the upper layer substrate. A metallized pattern 9 is formed around the through hole 7 so as to surround the through hole 7 concentrically.

【0025】図2は本発明のLCC用基板の部分断面図
を示し、12はダイシングラインを示す。本図に示すよ
うに、重畳されて焼成・一体化したLCC用基板の導体
パターン5aは、ブランドビア4及び導体パターン5b
を介してスルーホール3に繋がっている。なお、本図で
は、図の理解のため、本来一断面上には並ばない内部配
線の断面と貫通穴及びメタライズパターンの断面を並べ
て図示している。
FIG. 2 is a partial sectional view of the LCC substrate of the present invention, and 12 indicates a dicing line. As shown in the figure, the conductor pattern 5a of the LCC substrate which is superposed, fired and integrated is the brand via 4 and the conductor pattern 5b.
Through to the through hole 3. In this figure, for the sake of understanding, the cross section of the internal wiring, the cross section of the through hole and the cross section of the metallized pattern, which are not originally arranged on one cross section, are shown side by side.

【0026】このような構成であるため、導体パターン
5aにフリップチップ(図示せず)をフェースダウンボ
ンディングし、保護材11で被覆しても、表面にスルー
ホールが開口していないため、その中に保護材11が入
り込んで実装の障害になるということがなくなる。
With such a configuration, even if a flip chip (not shown) is face-down bonded to the conductor pattern 5a and covered with the protective material 11, no through hole is formed on the surface. This prevents the protective material 11 from entering the device and hindering mounting.

【0027】また、ダイシング時には貫通穴17をダイ
シングソーの位置合わせ基準とすることによって、スル
ーホールが上層基板に隠された状態であっても、スルー
ホールの略中心を結ぶ線で切断することが可能となって
いる。
Further, by using the through hole 17 as a reference for aligning the dicing saw at the time of dicing, the through hole 17 can be cut by a line connecting substantially the center of the through hole even when the through hole is hidden by the upper layer substrate. It is possible.

【0028】また、切断後、図3に示すような半導体装
置を得ることができる。本図に表れたLCC20は、図
1または図2に示したスルーホール3が分割されてでき
た凹部13を具備するが、その凹部は基板表面に至ら
ず、上層基板1によってブロックされている。従って、
実装時にはんだの這い上がりが防止され、検査工程で誤
認識されることがなくなる。
After the cutting, a semiconductor device as shown in FIG. 3 can be obtained. The LCC 20 shown in this figure has a concave portion 13 formed by dividing the through hole 3 shown in FIG. 1 or FIG. 2, but the concave portion does not reach the substrate surface and is blocked by the upper substrate 1. Therefore,
This prevents solder creeping up during mounting, and prevents erroneous recognition in the inspection process.

【0029】更に、スルーホール3の穴と、その中の導
体や導体パターン5bの印刷ずれが、貫通穴7とメタラ
イズパターン9のずれ加減を観察することにより判り、
これが基板一体化後も貫通穴10によって外部に露出さ
れて視認することができ、スクリーン印刷後どの工程に
おいてもチェックし、フィードバックすることができ
る。同様に、上層基板の貫通穴6とメタライズパターン
8のずれからは、ビアホール4と導体パターン5aの印
刷マスクずれが、保護材11で被覆された後でも観察す
ることができる。
Further, the printing deviation between the hole of the through hole 3 and the conductor or the conductor pattern 5b therein can be determined by observing the deviation between the through hole 7 and the metallized pattern 9, and
This can be exposed to the outside through the through hole 10 and visually recognized even after the substrate is integrated, and can be checked and fed back in any process after screen printing. Similarly, from the shift between the through-hole 6 of the upper layer substrate and the metallized pattern 8, the shift of the print mask between the via hole 4 and the conductor pattern 5 a can be observed even after being covered with the protective material 11.

【0030】また、貫通穴16と17のずれ量により、
上層基板と下層基板のずれ量を観察することができる。
これらずれ量は、周知のパターンマッチング法等の画像
処理手法によって、良不良の判定をすることができる。
例えば貫通穴17をφ200μm、貫通穴16をφ10
0μmとしたとき、それぞれの穴の中心は最大±50μ
mずれても平面視で貫通穴17内に貫通穴16が入って
いるが、これ以上ずれると円周が重なるのでこれを利用
して、容易に所望のずれ許容差を設定することが可能で
ある。因みに、貫通穴16が上記同様φ100μmの場
合、ずれ許容差を±30μmとしたい場合は、貫通穴1
7をφ160μmとすればよい。これは貫通穴とメタラ
イズの関係についても同様である。
Further, according to the amount of deviation between the through holes 16 and 17,
The amount of displacement between the upper substrate and the lower substrate can be observed.
These shift amounts can be determined to be good or bad by an image processing method such as a well-known pattern matching method.
For example, the through hole 17 is φ200 μm, and the through hole 16 is φ10
When 0 μm, the center of each hole is ± 50μ at maximum.
Although the through hole 16 is inserted into the through hole 17 in a plan view even if the distance is shifted by m, if the distance is further shifted, the circumference overlaps, so that it is possible to easily set a desired deviation tolerance using this. is there. Incidentally, when the through hole 16 is φ100 μm as described above, and when it is desired to set the deviation tolerance to ± 30 μm, the through hole 1
7 may be φ160 μm. The same applies to the relationship between the through hole and the metallization.

【0031】以上、発明の実施の形態について述べた
が、本発明はこれに限らず種々の変更が可能である。例
えば、上記実施の形態では、上層基板として単層の基板
を用いたが、2層以上のビアホールを持つ多層基板とし
てもよい。
Although the embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications can be made. For example, in the above embodiment, a single-layer substrate is used as the upper substrate, but a multi-layer substrate having two or more via holes may be used.

【0032】また、貫通穴7はスルーホール3の穴と同
径にしたが、穴空け用の金型を単純化するためであり、
必ずしも同径にしなくてもよい。
The diameter of the through hole 7 is the same as the diameter of the through hole 3 in order to simplify the die for drilling.
The diameters do not necessarily have to be the same.

【0033】また、貫通穴6や7の周辺にこれを取り囲
むように同心円状のメタライズパターンを形成したが、
スルーホールの穴と導体(ペースト)との相対ずれ量が
判るものであればその他の形の検出マークでもよい。但
し、実施の形態では、同心円状とすることにより、平面
上の全方向のずれを測ることができる。
A concentric metallization pattern is formed around the through holes 6 and 7 so as to surround the through holes 6 and 7.
Other types of detection marks may be used as long as the relative displacement between the through-hole and the conductor (paste) can be determined. However, in the embodiment, the concentric shape enables measurement of the deviation in all directions on the plane.

【0034】[0034]

【発明の効果】以上説明したように、上層基板でスルー
ホールを覆うことで、ここへの進入を気にすることなく
一括して保護材を塗布することができる。これにより、
LCC構造のパッケージを一度に多数個一括封止するこ
とが可能となった。切断も、上層及び下層基板の枠部に
設けた互いに連通する一対の貫通穴をダイシング時の位
置合わせ基準とすることができ、その一対の貫通穴を結
ぶ線からなるダイシングラインやスクライブラインに従
えば、確実に行うことができる。
As described above, by covering the through-hole with the upper layer substrate, the protective material can be applied collectively without worrying about entry into the through-hole. This allows
A large number of packages of the LCC structure can be sealed at once. Cutting can also be performed using a pair of through holes provided in the frame portions of the upper layer and the lower layer substrate as a positioning reference at the time of dicing, and obey a dicing line or a scribe line formed of a line connecting the pair of through holes. If so, it can be done reliably.

【0035】また、半導体装置として最終製品になった
とき、はんだのフィレットが目視でき、しかもチップ実
装面へのはんだ這い上がりが防止されるため、高価な検
査装置が必要なく、歩留まりも向上することができる。
Further, when a final product is obtained as a semiconductor device, a fillet of solder can be visually observed, and the solder is prevented from creeping up on the chip mounting surface, so that an expensive inspection device is not required and the yield is improved. Can be.

【0036】また、基板同士のずれや、ビアホールやス
ルーホールの穴とこれらの中の導体やこれに接続する導
体パターンとのずれをいつでも観察することができ、検
査工程をフレキシブルに配置することが可能となる。
In addition, it is possible to observe at any time the displacement between the substrates and the displacement between the holes of the via holes and the through holes and the conductors therein and the conductor patterns connected thereto, so that the inspection process can be flexibly arranged. It becomes possible.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のLCC用基板の分解斜視図である。FIG. 1 is an exploded perspective view of an LCC substrate according to the present invention.

【図2】本発明のLCC用基板の部分断面図である。FIG. 2 is a partial cross-sectional view of the LCC substrate of the present invention.

【図3】本発明のLCCを使用した半導体装置を示す図
である。
FIG. 3 is a diagram showing a semiconductor device using the LCC of the present invention.

【図4】従来のLGA構造の半導体装置を示す図であ
る。
FIG. 4 is a diagram showing a conventional semiconductor device having an LGA structure.

【図5】従来のLCC構造の半導体装置を示す図であ
る。
FIG. 5 is a diagram showing a conventional semiconductor device having an LCC structure.

【符号の説明】[Explanation of symbols]

1:上層基板、2:下層基板、3:スルーホール、4:
ビアホール、5:導体パターン、6,7,10,16,
17:貫通穴、8,9:メタライズパターン、11:保
護材、12:ダイシングライン、13:凹部、14:チ
ップ、15:ランド、19:枠部、20:LCC
1: upper layer substrate, 2: lower layer substrate, 3: through hole, 4:
Via hole, 5: conductor pattern, 6, 7, 10, 16,
17: through hole, 8, 9: metallized pattern, 11: protective material, 12: dicing line, 13: concave, 14: chip, 15: land, 19: frame, 20: LCC

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 リードレスチップキャリアを形成する領
域の少なくとも外表面に繰り返し形成された複数の同一
パターンからなる電子部品が搭載可能な導体パターンを
有する上層基板と、該上層基板に重畳し、外表面に前記
上層基板の導体パターンに対応しかつ実装基板と接続可
能に形成された導体パターンを有する下層基板とからな
り、前記上層基板の導体パターンと前記下層基板の導体
パターンが内部配線により内部的に導通した積層構造の
リードレスチップキャリア用基板において、 前記上層基板と前記下層基板それぞれのリードレスチッ
プキャリアを構成しない枠部に、互いに連通する貫通穴
が形成され、前記上層基板の貫通穴が前記下層基板の貫
通穴より大であることを特徴とするリードレスチップキ
ャリア用基板。
An upper layer substrate having a conductor pattern on which electronic components having a plurality of identical patterns repeatedly formed on at least an outer surface of a region for forming a leadless chip carrier can be mounted. A lower layer substrate having a conductor pattern corresponding to the conductor pattern of the upper substrate and formed so as to be connectable to the mounting substrate on the surface, wherein the conductor pattern of the upper substrate and the conductor pattern of the lower substrate are internally formed by internal wiring. In the substrate for a leadless chip carrier having a laminated structure, the through-holes communicating with each other are formed in frame portions of the upper layer substrate and the lower layer substrate that do not constitute the leadless chip carrier, and the through holes of the upper layer substrate are formed. A substrate for a leadless chip carrier, wherein the substrate is larger than a through hole of the lower substrate.
【請求項2】 前記内部配線が、前記上層基板および前
記下層基板に形成されたビアホールまたはスルーホール
と、該ビアホールまたは該スルーホール相互の接続用導
体パターンとからなり、前記下層基板の前記貫通穴周辺
に位置ずれ検出マークが設けられ、該位置ずれ検出マー
クは前記下層基板に重畳した前記上層基板の貫通穴領域
に全部または一部が露出していることを特徴とする請求
項1に記載のリードレスチップキャリア。
2. The internal wiring comprises a via hole or a through hole formed in the upper substrate and the lower substrate, and a conductor pattern for connecting the via hole or the through hole to each other. 2. The misalignment detection mark is provided in the periphery, and the misalignment detection mark is entirely or partially exposed in a through-hole region of the upper substrate superimposed on the lower substrate. Leadless chip carrier.
【請求項3】 前記位置ズレ検出マークが、前記下層基
板の前記貫通穴を同心円状に囲むメタライズパターンで
あることを特徴とする請求項1または2に記載のリード
レスチップキャリア用基板。
3. The substrate for a leadless chip carrier according to claim 1, wherein the misregistration detection mark is a metallized pattern that concentrically surrounds the through hole of the lower substrate.
【請求項4】 前記上層基板の内部配線にビアホールを
含み、前記下層基板内の内部配線にスルーホールを含む
ことを特徴とする請求項1乃至3に記載のリードレスチ
ップキャリア用基板。
4. The leadless chip carrier substrate according to claim 1, wherein the internal wiring of the upper substrate includes a via hole, and the internal wiring of the lower substrate includes a through hole.
【請求項5】 前記下層基板に含まれる前記スルーホー
ルをチップキャリア形成領域の周辺部に配置したことを
特徴とする請求項4に記載のリードレスチップキャリア
用基板。
5. The substrate for a leadless chip carrier according to claim 4, wherein said through holes included in said lower substrate are arranged in a peripheral portion of a chip carrier forming region.
【請求項6】 前記スルーホールが前記チップキャリア
形成領域の周辺部各辺に一列に並び、各辺の前記スルー
ホールを隣り合う前記チップキャリア形成領域で共有
し、前記上層基板及び前記下層基板の前記枠部に形成さ
れた互いに連通する前記貫通穴が、一列に並んだ前記ス
ルーホール毎に該スルーホールを挟み該スルーホールと
一列に並ぶよう1対づつ形成されていることを特徴とす
る請求項5に記載のリードレスチップキャリア用基板。
6. The upper substrate and the lower substrate, wherein the through holes are arranged in a line on each side of a peripheral portion of the chip carrier forming region, and the through holes on each side are shared by the adjacent chip carrier forming regions. The through-holes formed in the frame portion and communicating with each other are formed in a pair so that the through-holes are arranged in a line and sandwich the through-holes and are arranged in a line with the through-holes. Item 6. A substrate for a leadless chip carrier according to item 5.
【請求項7】 前記請求項5または6に記載のリードレ
スチップキャリア用基板を切断分離してなるリードレス
チップキャリアであって、前記チップキャリア形成領域
の周辺部に設けた、前記スルーホールの略中心を結ぶ線
に沿って切断分離されていることを特徴とするリードレ
スチップキャリア。
7. A leadless chip carrier obtained by cutting and separating the leadless chip carrier substrate according to claim 5 or 6, wherein the through hole provided in a peripheral portion of the chip carrier forming region is provided. A leadless chip carrier which is cut and separated along a line substantially connecting the centers.
JP15320199A 1999-06-01 1999-06-01 Leadless chip carrier substrate Expired - Fee Related JP4060989B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15320199A JP4060989B2 (en) 1999-06-01 1999-06-01 Leadless chip carrier substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15320199A JP4060989B2 (en) 1999-06-01 1999-06-01 Leadless chip carrier substrate

Publications (2)

Publication Number Publication Date
JP2000340698A true JP2000340698A (en) 2000-12-08
JP4060989B2 JP4060989B2 (en) 2008-03-12

Family

ID=15557262

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP4060989B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004103859A (en) * 2002-09-10 2004-04-02 Cmk Corp Multi-piece printed wiring board for mounting electronic component and its manufacturing method, and surface mount component
KR20150053448A (en) * 2013-11-08 2015-05-18 에스케이하이닉스 주식회사 Substrate for semiconductor package and semiconductor package using the same
JP7193920B2 (en) 2018-03-09 2022-12-21 株式会社ディスコ Package substrate processing method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60151137U (en) * 1984-03-16 1985-10-07 京セラ株式会社 Chippukiyariya
JPS61222151A (en) * 1985-03-27 1986-10-02 Ibiden Co Ltd Manufacture of printed wiring substrate for mounting semiconductor
JPS62162394A (en) * 1986-01-13 1987-07-18 株式会社日立製作所 Multilayer printed wiring board
JPH01117777U (en) * 1988-01-28 1989-08-09
JPH05218653A (en) * 1992-01-31 1993-08-27 Sumitomo Metal Ind Ltd Ceramic multilayer circuit board
JPH10209640A (en) * 1997-01-17 1998-08-07 Ngk Spark Plug Co Ltd Manufacture of multi-layer ceramic substrate
JPH10270819A (en) * 1997-03-28 1998-10-09 Ngk Spark Plug Co Ltd Surface mounting electronic part and its manufacture
JPH11135951A (en) * 1997-10-30 1999-05-21 Kyocera Corp Multilayer wiring board
JP2000208671A (en) * 1999-01-14 2000-07-28 New Japan Radio Co Ltd Ceramic substrate, semiconductor device using the same and manufacture thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60151137U (en) * 1984-03-16 1985-10-07 京セラ株式会社 Chippukiyariya
JPS61222151A (en) * 1985-03-27 1986-10-02 Ibiden Co Ltd Manufacture of printed wiring substrate for mounting semiconductor
JPS62162394A (en) * 1986-01-13 1987-07-18 株式会社日立製作所 Multilayer printed wiring board
JPH01117777U (en) * 1988-01-28 1989-08-09
JPH05218653A (en) * 1992-01-31 1993-08-27 Sumitomo Metal Ind Ltd Ceramic multilayer circuit board
JPH10209640A (en) * 1997-01-17 1998-08-07 Ngk Spark Plug Co Ltd Manufacture of multi-layer ceramic substrate
JPH10270819A (en) * 1997-03-28 1998-10-09 Ngk Spark Plug Co Ltd Surface mounting electronic part and its manufacture
JPH11135951A (en) * 1997-10-30 1999-05-21 Kyocera Corp Multilayer wiring board
JP2000208671A (en) * 1999-01-14 2000-07-28 New Japan Radio Co Ltd Ceramic substrate, semiconductor device using the same and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004103859A (en) * 2002-09-10 2004-04-02 Cmk Corp Multi-piece printed wiring board for mounting electronic component and its manufacturing method, and surface mount component
KR20150053448A (en) * 2013-11-08 2015-05-18 에스케이하이닉스 주식회사 Substrate for semiconductor package and semiconductor package using the same
KR102113335B1 (en) * 2013-11-08 2020-05-20 에스케이하이닉스 주식회사 Substrate for semiconductor package and semiconductor package using the same
JP7193920B2 (en) 2018-03-09 2022-12-21 株式会社ディスコ Package substrate processing method

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