JP2000335993A - Czochralski puller for producing single crystal silicon ingot by regulating temperature gradient at central and edge parts of boundary between ingot and melt, heat shield for czochralski puller and improvement of czochralski puller - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make a single crystal silicon ingot grow in a defect-free state by attaching a ring-type heat shield to a czochralski puller for a single crystal silicon ingot and by regulating the temperature gradient in the boundary between the ingot and a melt. SOLUTION: A heat shield 214 comprising a ring-type heat shield housing and a support member supporting the housing is installed. The ring-type heat shield housing has an inner heat shield housing wall, an outer heat shield housing wall, an oblique heat shield housing floor and a heat shield housing roof extending between the above walls, and contains an insulator in itself. At least one of the following conditions is regulated so as for temperature gradient to be >2.5 deg. K/mm on the ingot axis A in a boundary between an ingot 228 and a melt 226 and also to be nearly equal to temperature gradient along a drift distance B from the verge of the columnar ingot: the position of the heat shield 214; the arrangement of the heat shield; the position of a heater 204; the arrangement of a cooling jacket 232; the position of a furnace 206; the arrangement of a heat pack 202; and the applied electric power to the heater 204.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention
More specifically, the present invention relates to a Czochral skipper as a method and apparatus for manufacturing a single crystal silicon ingot by controlling a temperature gradient at a center and an edge of an ingot-melt boundary (interface). The present invention relates to a ralski puller, a thermal barrier for the Czochralski puller, and a method for improving the Czochralski puller.

[0002]

2. Description of the Related Art Integrated circuits are widely used by consumers and are also widely used commercially. Integrated circuits are generally manufactured from single crystals. As the integration density of integrated circuits continues to increase, it becomes increasingly important to provide high quality single crystal semiconductor materials for integrated circuits. Integrated circuits are typically manufactured by manufacturing large single crystal silicon ingots, ingot slicing into wafers, performing numerous microelectronic device manufacturing processes on wafers, and cutting wafers into packaged individual integrated circuits. You. Efforts to produce ingots and wafers with a reduced number of defects have increased since the purity and crystallinity of silicon ingots have a significant effect on the performance of the final integrated circuit device fabricated therefrom.

A general method for producing a conventional single crystal silicon ingot will now be described. An outline of such a method can be found in the text "Silicon Processing fo," written by Wolf and Tauba in 1986.
r the VLSI Era, Volume 1, Pr
Process Technology ", Chapter 1, pages 1 to 35, a detailed description of which is incorporated herein by reference.
nic grade polycrystals are converted to single crystal silicon ingots. Polycrystalline silicon such as a quartz chart is refined with electronic grade polycrystalline silicon. The refined electronic grade polycrystalline silicon is refined with electronic grade polycrystalline silicon. The refined electronic grade polycrystalline silicon is grown as a single crystal ingot using the Czochralski (CZ) method or the flot zone (FZ) technique. The present invention relates to CZ
It is related to using technology to produce silicon ingots, and we'll look into this technology below.

Czochralski growth is associated with the solidification of atoms from liquid to crystalline at the boundary. Specifically, the furnace is filled with electronic grade polycrystalline silicon, and the melt is melted.
A silicon seed crystal with the correct orientation tolerance falls down into the silicon melt. Subsequently, the seed crystal is lifted at a controlled speed in the axial direction. The seed crystal and the furnace generally rotate in opposite directions during the pulling process.

Since the initial pulling speed is relatively fast, a narrow neck of silicon is formed. Subsequently, a more favorable ingot diameter is formed as the melting temperature decreases and stabilizes. Such a diameter is generally maintained by controlling the pulling speed. Pulling continues until the melt is almost burned out, forming a tail.

FIG. 1 is a schematic view of a Czochralski puller. As shown in FIG. 1, a Czochralski puller 100 includes a furnace, a crystal pulling mechanism, an environmental controller, and a computerized control system. Czochralski furnaces are generally hot zone furnaces.
urnase). The hot zone furnace includes a furnace 106 made of a heater 104, a susceptor 108 made of graphite, and a rotating shaft 110 that rotates in a first direction 112 as shown.

[0007] Cooling Jac
ket) or cooling port
132 is cooled by external cooling means such as water cooling. Thermal barrier 114 can provide additional heat distribution. Heating pack (h
Eat pack 102 is filled into heat absorbing material 116 to provide additional heat distribution.

The crystal pulling mechanism includes a crystal pulling shaft 120 that can rotate in a second direction 122 opposite to the first direction 112 as shown. The crystal pulling shaft 120 has a seed holder (seed hol) at its end.
der) 120a. The seed holder 120a holds the seed crystal 124 and melts 1 in the furnace 106.
Pulled from 26 to form ingot 128.

The environmental control system includes a chamber seal 13.
0, including a cooling jacket 132 and other flow controllers and evacuation systems not shown. Computerized control systems can be used to control heaters, pullers, and other electrical and mechanical components.

[0010] To grow a single crystal silicon ingot, the seed crystal 124 contacts the silicon melt 126 and is gradually pulled axially (upward). Cooling and solidification (solidification) of the silicon melt 126 into single crystal silicon is effected at the boundary 13 between the ingot 128 and the melt 126.
Get up at 4. As shown in FIG. 1, the boundary 134 is bulging with respect to the melt 126.

Actual silicon ingots differ from ideal single crystal ingots because they contain imperfections or defects. Such defects are not desirable for manufacturing integrated circuit devices. Such defects are generally point defects (po
int defect or agglomerat
es: three-dimensional defect). Point defects have two general forms: vacancy point defects and interstitial point defects. A vacancy point defect is one in which one silicon atom has escaped from one of its normal positions in the silicon crystal lattice. Such vacancies become vacancy point defects. On the other hand, when an atom is found from a non-lattice point (interstitial site) of a silicon crystal, this becomes an interstitial point defect.

[0012] Point defects are generally caused by silicon melt 126.
13 between the solid silicon ingot 128
4 is formed. However, as the ingot 128 is continuously pulled up, the portion that was the boundary begins to cool. During cooling, the diffusion of the vacancy point defects and the interstitial point defects causes the defects to merge with each other to form a vacancy or interstitial mass. A lump is a three-dimensional structure generated by merging point defects. The interstitial mass is a deslocation defect or a D-defect (D
-Defect). Lumps are sometimes named by the technique used to detect such defects. Therefore, vaccinia lump is sometimes COP (Cr
ystal Originated Particle
s), LST (Laser scattering To)
(MOG) defect or FPD (Flow Pa)
(Tern Defects).
The interstitial mass is also L / D (Large / Di)
It is also known as a lump. A discussion of defects in single crystal silicon is provided in Chapter 2 of the aforementioned text by Wolf and Tauba, a detailed description of which is incorporated herein.

It is known that many parameters need to be controlled in order to grow high purity ingots with a low number of defects.
For example, it is known to control a temperature gradient by a pulling speed of a seed crystal and a hot zone structure. Boronkov's theory shows that the ratio of V to G (referred to as V / G) is to determine the concentration of point defects in the ingot,
Where V is the pull rate of the ingot and G is the temperature gradient at the ingot-melt interface. Boronkov's theory was written by Boronkov, "The Mechanismo.
f SwirlDefects Formation i
n Silicon "[Journalof Cryst
al Growth, Vol 59, 1982, pp. 139-157.
625 to 643].

The application of boron cobb theory was introduced from November 25 to 29, 1996 in the 2nd International Symposium on Improved Chemical Technology for Silicon Materials (Se).
cond International Symposi
um on AdvancedScience and T
technology of Silicon Mater
ial) published by the inventor of the present application in "Effec
t of Crystal Defects on Dev
Ice Characteristics ", page 519. In Figure 15 of the paper, re-illustrated in Figure 2 of the present application, we graphically represented vacancy and interstitial concentrations as a function of V / G. Graphically represented vacancies and interstitial concentrations at the wafer, and boron cobb theory shows that the occurrence of vacancy / interstitial mixing at the wafer is determined by V / G. Above the critical point, a vacancy-rich ingot is formed.

[0015] Despite numerous theoretical studies by physicists, material scientists and many others, and many empirical studies by Czochralski Puller makers, to reduce defect density in single crystal silicon wafers. The need continues.

[0016]

SUMMARY OF THE INVENTION The present invention provides an ingot-melting temperature gradient greater than 2.5 K / mm on the ingot axis and at least approximately the same as the temperature gradient at the diffusion distance from the cylindrical edge of the ingot. Improved method of improving a Czochralski puller for producing defect-free single crystal ingots without vacancies and interstices by improving the elements of the Czochralski puller so that it can be obtained at the object boundary. It is intended to provide a Czochralski puller. By allowing a temperature gradient at the ingot-melt interface to be obtained at the ingot axis that is greater than 2.5 K / mm at the ingot axis and at least approximately the same as the temperature gradient at the diffusion distance from the cylindrical edge of the ingot. An ingot-melt interface can be obtained that is flat or swelled against the silicon melt. The ingot pulled in this way may be cut and contain point defects, resulting in a number of defect-free wafers without vacancies and interstices.

[0017]

SUMMARY OF THE INVENTION A Czochralski puller according to the present invention includes a seal and a furnace within the seal holding a silicon melt. A seed holder is positioned in the enclosure adjacent to the furnace. A heater is arranged to surround the furnace within the enclosure. A heating pack is positioned around the heater within the enclosure. A thermal barrier is located between the furnace and the seed holder and a cooling jacket is located between the thermal barrier and the seed holder. Pulling means are provided for pulling the seed holder out of the furnace so that the single crystal silicon ingot is pulled from the silicon melt. Single crystal silicon ingots have a shaft and a cylindrical edge. The silicon melt and the ingot are separated by an ingot-melt boundary between them.

An object of the present invention is to provide an inner heat shield housing wall.
wall, outer heat insulation housing wall (outer h)
eat shield housing wall, inclined heat insulation housing bottom (oblique heat s)
heat housing floor and a heat shield housing extended between the inner and outer heat shield housing walls.
It is an object of the present invention to provide a thermal barrier for a Czochralski puller that includes a use roof. The heat insulation housing contains an insulating material therein. A support member is arranged to support the thermal barrier housing in a furnace within the Czochralski puller. The inner and outer heat shield housing walls can be preferably vertical inner and outer heat shield walls, and the heat shield housing lid can be a preferably inclined heat shield housing lid.

In one embodiment, the support member includes at least one support arm that extends to the ring-shaped heat insulation housing. The at least one support arm may be hollow and may include an insulating material therein. In another embodiment, the support member may be a ring-type support member. The ring-type support member may include an inner support member wall and an outer support member wall containing an insulating material therebetween. The ring-shaped support member may also include at least one window therein. The ring-shaped support member can be inclined.

According to the present invention, at least one of the position of the heat shield, the position of the heat shield, the position of the heater, the position of the cooling jacket, the position of the furnace, the position of the heating pack, and the electric power applied to the heater is controlled by the ingot shaft. Is selected to be able to obtain a temperature gradient at the ingot-melt interface that is greater than 2.5 K / mm and at least approximately the same as the temperature gradient at the diffusion distance from the cylindrical edge of the ingot. According to another aspect of the present invention, at least one of the position of the heat shield, the position of the heat shield, the position of the heater, the position of the cooling jacket, the position of the furnace, the position of the heating pack, and the power applied to the heater is flat. Or inflated ingot-melt interface to the silicon melt.

Each of the described parameters can be individually changed. For example, a furnace includes a furnace top and a furnace bottom, and a thermal barrier includes a thermal barrier top and a thermal barrier bottom. The position of the heat shield can preferably be selected by changing the distance between the heat shield bottom and the furnace top.

The arrangement of the heat shields can be selected by providing a heat shield lid on the heat shield bottom. The heat shield lid preferably includes an inner heat shield housing wall, an outer heat shield housing wall, an inclined heat shield housing bottom and a heat shield housing lid extending between the inner heat shield housing wall and the outer heat shield housing wall in the furnace. Includes a ring-shaped heat insulation housing. The heat shield housing preferably contains an insulating material therein. The slanted heat shield housing is defined at a constant angle from the horizontal, and the arrangement of the heat shields is preferably selected by this angle.

The slanted heat shield bottom forms a first corner with the horizontal, and the slanted heat shield housing lid forms a second corner with the horizontal. At least one of the length of the inner wall, the first corner and the second corner is preferably such that the temperature gradient at the ingot-melt boundary at the axis is at least approximately the same as the temperature gradient at the diffusion distance from the cylindrical edge. To be selected.

The heater also includes a heater top and a heater bottom, and the location of the heater is preferably selected by changing the distance between the furnace top and the heater top. The position of the heater and the position of the furnace can also be changed simultaneously, perpendicular to the seal.

The cooling jacket also includes a cooling jacket top and a cooling jacket bottom, and the location of the cooling jacket can preferably be selected by varying the distance between the furnace top and the cooling jacket bottom. The heating pack includes an upper heating pack housing and a lower heating pack housing, each of which is filled with a heat absorbing material. The arrangement of the heating packs is preferably selected by removing at least a portion of the heat absorbing material from the upper heating pack housing.

The upper heat pack housing is at least partially unfilled with a heat absorbing material. Preferably, all of the heat absorbing material is removed from the upper heat pack housing so that the upper heat pack housing is free of heat absorbing material.

The heat shield support member is preferably attached to the upper heating pack housing to support the ring heat shield housing in the furnace.

The variables mentioned are preferably greater than 2.5 ° K / mm on the ingot axis and have a temperature gradient at least approximately identical to the temperature gradient at the diffusion distance from the cylindrical edge of the ingot-melt interface. You can change together as you can get in. In particular, at least one of the position of the heat shield, the arrangement of the heat shield and the position of the heater is such that the temperature gradient at the ingot-melt boundary at the axis is at least approximately equal to the temperature gradient at the diffusion distance from the cylindrical edge. They are selected to be identically formed. Subsequently, at least one of the arrangement of the cooling jackets, the position of the furnace and the arrangement of the heating packs is selected such that a temperature gradient at the ingot-melt boundary at the axis is formed greater than 2.5 ° K / mm. .

In particular, the location of the thermal barriers, the arrangement of the thermal barriers and the location of the heaters are all selected such that the temperature gradient at the ingot-melt boundary at the axis is formed to be greater than the temperature gradient at the cylindrical edge. Is done. Subsequently, the arrangement of the cooling jacket, the position of the furnace, the position of all the heaters and the furnace and the arrangement of the heating packs are all maintained while the temperature gradient at the axis is at least approximately identical to the temperature gradient at the cylindrical edge. The temperature gradient at the ingot-melt boundary axis is selected to be greater than 2.5 K / mm. Thereby, defect-free silicon wafers can be formed with the improved Czochralski puller.

[0030]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. On the other hand, the present invention can be embodied in many other forms, and is not limited to the embodiments described below.

<Overview: Vacancy-rich and defect-free wafer> Referring to FIGS. 3 to 7, (1) a vacancy-rich region formed at the center of the wafer and containing a vacancy mass, and (2) a vacancy-rich region An overview for the fabrication of semi-defective wafers having a pure region without vacancies and interstitial clumps located between the region and the wafer edge is described. As shown in FIG. 3, the production of such vacancy-rich wafers begins with Voronkov's theory. Boronkov's theory is shown diagrammatically in FIG. Edge E
V / G as shown on the line starting at and ending at the center C
The ratio of the pulling rate to the temperature gradient at the surface of the ingot melt, expressed as: (V / G) ₁ at the diffusion distance from edge E labeled “point a”, and (V
/ G) If being maintained less than _2, Bekanshi its center - rich region and Bekanshi - rich region and semitrailers having a denuded zone between the edges of the wafer - the invention that a defect-free wafer can be produced Revealed by In particular, V / G varies radially across the wafer at the ingot and generally decreases from the wafer center to the edge due to other thermal properties at the center and edge of the wafer. Thus, the wafer has a radial V / G range from its center C to edge E as shown in FIG.

The primary concern in the production of silicon ingots and wafers has been the formation of vacancies or interstitial agglomerates on the wafer. Lumps are known to form from the fusion due to the merging of point defects formed during the early stages of ingot production. The point defect concentration is generally determined by conditions at the boundary between the silicon ingot and the silicon melt. Subsequently, further pulling of the ingot will determine the merging of point defects for diffusion and cooling to form a lump.

As shown in FIG. 4, according to the present invention, there are a critical vacancy point defect concentration [V] ^* and a critical interstitial point defect concentration [I] ^* below which each point defect is not merged as a lump. It is known that
According to the present invention, if the concentration of point defects is maintained below such a critical concentration in the region around the wafer, a vacancy-rich region will be formed in the center of the wafer, and the edge of the wafer and the vacancy It has been found that defect-free regions are formed between the rich regions.

Accordingly, as shown in FIG. 4, the vacancy concentration is maintained below the critical vacancy concentration [V] ^* across the wafer except for the vicinity of its center C.

Therefore, as shown in FIG. 5, the vacancy-rich region [V] is formed at the center thereof, and the region from the outer frame of the vacancy-rich region [V] to the edge of the wafer has no vacancy mass. And [P] is displayed (pure or defect-free).

Referring also to FIG. 4 for interstitial, the interstitial concentration is the diffusion distance L ₁ from the edge E of the wafer, corresponding to point a from the center of the wafer.
Is maintained below the critical interstitial concentration [I] ^* . Between the wafer diffusion length L ₁ and the edge E, the interstitial concentration initial ingot - even if the melt boundary is critical concentration [I] ^* Thus, the interstitial based forceps by diffusion is diffused from the ingot And do not form lumps during crystal growth. Diffusion distance L ₁
Is approximately 2.5 to 3 cm for an 8 inch wafer. Therefore, as shown in FIG. 5, a semi-defective wafer having a vacancy-rich region [V] at the center and a defect-free region [P] between the vacancy-rich region and the edge is formed. Preferably, the defect-free region [P] will be at least 36% of the wafer area, more preferably at least 60% of the wafer area.

V / G to form the wafer in FIG.
Is greater than (V / G) ₁ at point a and (V / G)
G) Must be kept the same or smaller than ₂ . V
In order to maintain the ratio of / G between two critical values, two thermal considerations must be taken. First, the radial temperature gradient G from the center C of the wafer to the diffusion distance a of the wafer must be maintained within these critical values. Therefore, the V / G at the center must be close to (V / G) ₂ to suppress the vaccinia mass into the vacancy-rich region. Furthermore, the diffusion distance L from the edge
V / G at ₁ must largely maintained than (V / G) ₁ to prevent the interstitial mass. Therefore, the hot zone of the furnace has V / G of (V / G) ₂ and (V / G) ₁ from the center of the wafer to the diffusion distance of the wafer.
Must be designed so that the change in G can be maintained.

The second consideration is that the wafer is seeded (seed).
G changes in the axial direction by being pulled from the melt starting at ed) and ending at the tail. In particular, the increasing amount of heat in the ingot, the decreasing amount of heat in the melt, and other thermal considerations generally reduce G as the ingot is pulled from the melt. Thus, to maintain V / G between the first and second critical ratios, the pull rate profile is adjusted by pulling the ingot from the silicon melt in a hot zone furnace.

When the ingot is pulled up, V /
By controlling G, the vacancy mass can be limited to a vacancy-rich region [V] close to axis A of the ingot as shown in FIG. No interstitial mass is formed and the ingot region outside the vacancy-rich region [V] is labeled [P] indicating pure or defect-free.
As shown in FIG. 6, this includes a vacancy mass, no vacancy-rich region [V] located at the center thereof, no vacancy mass and interstitial mass, and no vacancy-rich region and wafer edge. A plurality of semi-defective wafers having a defect-free region between them are produced.
The diameter of the vacancy-rich region [V] is the same for each wafer. Confirmation for multiple wafers formed from a single ingot is generally indicated by alphanumeric on all wafers
It can be grasped by the number of IDs, which are “IDs” displayed in FIG. 6 as codes. Such eighteen symbols can distinguish all wafers coming out of a single ingot.

FIG. 7 is a pull rate profile used to maintain V / G between two critical ratios when the ingot is pulled from the melt. Since G generally decreases as the ingot is pulled from the melt, the pull rate V is also generally reduced to maintain V / G between the two critical ratios. Preferably, V / G is maintained midway between the first and second critical ratios to allow for expected process variables. Therefore, it is preferable that the boundary region (guard b) be used to allow for process variables.
and) are maintained.

FIGS. 8 to 12 correspond to FIGS. 3 to 7 and show the adjustment of the pulling speed profile for forming a defect-free silicon ingot and a wafer according to the present invention. As shown in FIG. 8, if V / G is maintained within a tight tolerance between the wafer center C and the diffusion distance a from the wafer edge E, the interstitial will be spread over the entire wafer. As in the case of the char mass, the formation of the vacancy mass can be prevented. Therefore, as shown in FIG. 9, the V / G ratio at the center C (ingot axis A) of the wafer is maintained lower than the critical ratio (V / G) ₂ for forming vaccinia lump. Similarly, V / G is maintained above the critical ratio (V / G) ₁ that forms the interstitial mass. Accordingly, the defect-free silicon [P] shown in FIG. 10 having no interstitial mass and vacancy mass is formed. A defect-free ingot with one set of wafers is shown in FIG.

The pull rate profile for defect free silicon is shown in FIG.

Overview: Improved Czochral Skipper and Thermal Barrier With reference to FIG. 13, an improved Czochral skipper according to the present invention will be described. As shown in FIG. 13, an improved Czochral skipper 200
Includes furnace, crystal pulling mechanism, environmental controller and computerized control system. Czochralski furnaces are commonly called hot zone furnaces. The hot zone furnace includes a heater 204, a furnace 206 made of quartz, a susceptor 208 made of graphite, and a first direction 2 as shown.
12 includes a rotating shaft 210 that rotates.

The cooling jacket or cooling port 232 is cooled by external cooling means such as water cooling. Thermal barrier 214 can provide additional heat distribution. Heat pack 202 includes additional heat absorbing material 216 therein to provide additional heat distribution.

The crystal pulling mechanism includes a crystal pulling shaft 220 that can rotate in a second direction 222 opposite to the first direction 212 as shown. Crystal pulling shaft 220 includes a seed holder 220a at its end. Seed holder 220a holds seed crystal 224 and is pulled from melt 226 in furnace 206 to form ingot 228.

The environment control system includes the chamber seal 23
0, including a cooling jacket 232 and other flow controllers and evacuation systems not shown. Computerized control systems can be used to control heaters, pullers, and other electrical and mechanical components.

To grow a single crystal silicon ingot, the seed crystal 224 is brought into contact with the silicon melt 226 and gradually becomes axially oriented by a crystal pulling shaft 220 or other conventional means for pulling the seed holder from the furnace. Upward). Cooling and solidification of the silicon melt 226 into single crystal silicon is accomplished by ingot 228.
At the interface 238 between the melt 226 and the melt 226.

According to the present invention, the position of the heat interrupter 214,
Arrangement of heat shields 214, position of heater 204, arrangement of cooling jacket 232, position of furnace 206, heating pack 20
2 and at least one of the powers applied to the heaters 204 is 2.5 ° K on the ingot axis labeled point A.
/ Mm and the temperature gradient at the diffusion distance from the cylindrical edge of the ingot, denoted as point B, is selected such that at least approximately the same temperature gradient is obtained at the ingot-melt interface. In other words, these variables are the ingot-melt interface 2 that is flat, as shown in FIG.
38 can be adjusted.

First, the importance of obtaining a temperature gradient at the ingot-melt boundary greater than 2.5 ° K / mm on the ingot axis and at least approximately the same as the temperature gradient at the diffusion distance from the cylindrical edge of the ingot. First, a theoretical discussion will be described. Next, the route of each variable that can be changed is described. Finally, we describe changing the variables together.

<Theoretical Discussion> Summarizing the discussion on the production of defect-free silicon, and referring again to FIG. 9B, in order to obtain defect-free silicon, the distance L ₁ from points C and E in FIG. The corresponding temperature gradient of the radius r and the axis z at the ingot-melt interface must be maintained between [V] ^* and [I] ^* from the axis of the ingot to the diffusion distance from the cylindrical edge of the ingot. Must. Therefore,
The following equations (1) and (2) hold. (V / G) ₁ <V / G (r) <(V / G) ₂ (1) (V / G) ₁ <V / G (z) <(V / G) ₂ (2)

V / G between the diffusion distance from the shaft and the cylindrical edge
Is defined by the following equation (3), the following result is obtained by the equation (4). ΔV / G = (V / G) ₂ − (V / G) ₁ (3) ΔV / G = V [(1 / G ₂ ) − (1 / G ₁ )] = V [(G ₁ − G ₂ ) / (G ₁ · G ₂ )]… (4)

△ G ′ is defined by the following equation (5). ΔG ′ = G ₁ −G ₂ (5)

Subsequently, in order to minimize ΔV / G in equation (4), the following equations (6) and (7) must be maintained. ΔG ′ ≦ 0 (6) G ₂ ≧ 2.5 (7)

By combining equations (5) and (6), the following equation (8) is obtained. G ₂ ≧ G ₁ (8)

In other words, equation (8) states that the temperature gradient at the axis at the ingot-melt boundary is at least approximately the same as the temperature gradient at the diffusion distance from the cylindrical edge at the ingot-melt boundary. means. In other words, equation (7) means that the temperature gradient at the ingot-melt boundary must be greater than 2.5 K / mm at its axis (center).

Equation (7) indicates that the lower limit of the pulling speed V is approximately 0.4 mm / min. Therefore, it was obtained based on experimental observation. At pulling speeds below this speed, the ingot can leave the seed holder. Further, the substantial lower limit of (V / G) ₂ is 0.16 mm / ° K. Therefore, the temperature gradient at the axis must be greater than 2.5 K / mm.

According to the present invention, the temperature gradient at the ingot-melt interface is greater than about 2.5 K / mm at the approximate axis (corresponding to point A in FIG. 13) and also from the cylindrical edge. At least approximately the same as the temperature gradient at the diffusion distance (corresponding to point B in FIG. 13), the ingot-melt boundary 238 of FIG. 13 is flat as shown in FIG. It can also be inflated to 226.

Qualitatively, it was confirmed that defect-free silicon can be obtained by heating increased more than supplementing the edge cooling effect at the edge of the ingot as compared with the center of the ingot.
In addition, a certain minimum temperature gradient in the center must also be maintained. If all of these critical values are satisfied, defect-free silicon is obtained.

According to the present invention, the furnace 2
It has been found that more heat should flow from the melt 226 to the air 236 than to the heat flowing from the melt 226 to the ingot 228 in the same. In other words, more heat must flow across the liquid / air boundary than across the liquid / solid boundary. To achieve such a preferred flow, additional heat from heater 204 must reach the edge of ingot 228 via air 236.

FIG. 14 shows the center (axis) C of the ingot to the edge.
Shows the radial gradient G as a function of the distance D to E
You. Ingot-melt boundary according to the present invention shown by solid line
Temperature gradient at ingot-melt boundary at center C at
Is the diffusion distance L from the cylindrical edge E ₁Temperature gradient and low
At least roughly the same. This is shown by the dotted line in FIG.
Generally, at the center C of the ingot, the diffusion distance from the edge E
Contrast with very large normal temperature gradients.

<Adjustment of Variables> As described above, according to the present invention, the position of the heat interrupter 214, the arrangement of the heat interrupters 214, the position of the heater 204, the position of the cooling jacket 232, the position of the furnace 206, the position of the heating pack At least one of the arrangement of 202 and the power applied to the heater 204 is greater than 2.5 K / mm on the ingot axis and has a temperature gradient that is at least approximately the same as the temperature gradient at the diffusion distance from the cylindrical edge of the ingot. It is selected to be obtained at the ingot-melt boundary. In the following description the temperature gradient in the ingot axis are represented by G ₂ ever and G _center.
The choice of each of these variables is described below.

Those skilled in the art will recognize that the actual value of each variable will depend on the model and manufacturer of the improved Czochralski puller. Further, for the Czochralski puller, a large set of variables can achieve the above results.

The selection of the position of the heat shield 214 is described below. As shown in FIG. 13, the furnace 206 includes a furnace upper end and a furnace lower end, and the thermal barrier 214 includes a thermal barrier upper end and a thermal barrier bottom. The position of the heat shield is selected by changing the distance between the heat shield bottom and the furnace top. This distance is shown in FIG.
Is displayed as a. FIG. 15 schematically shows the observed trends in changes in △ G ′ and _Gcenter as a function of distance a. As shown, a non-linear relationship between these two quantities may be relevant.

An improvement in the arrangement of the thermal barriers 214 is described below. As shown in FIG. 13, a conventional heat shield is improved at the heat shield bottom by adding a heat shield lid 234. The heat shield lid 234 is preferably made of carbon ferrite (carb).
filled with a heat preservation substance such as The physical dimensions of the heat shield lid 234 can also be varied as described below.

The change of the position of the heater 204 will be described below. As shown in FIG. 13, the heater 204 includes a heater top and a heater bottom. The position of the heater is changed by changing the distance between the top of the furnace and the top of the heater. This distance is shown as b in FIG. G as a function of distance a
The observed trends in the changes in _center and ΔG ′ are shown in FIG.

According to the present invention, the position of the heater 204 and the position of the furnace 206 can also be simultaneously changed perpendicular to the seal 230. In particular, the distance d between the furnace 206 and the seal 230 can change after the distance b between the upper end of the furnace and the upper end of the heater changes. FIG. 17 diagrammatically shows the trends observed with changes in △ G ′ and _Gcenter as a function of distance d while distance b is kept constant.

Changing the position of the cooling jacket is described below. As shown in FIG. 13, the cooling jacket 232 includes an upper end of the cooling jacket and a bottom of the cooling jacket. According to the invention, the position of the cooling jacket is changed by changing the distance between the top of the furnace and the bottom of the cooling jacket. This distance is indicated by C in FIG. FIG. 18 graphically illustrates the observed trends in changes in G _center and ΔG ′ as a function of distance c.

According to the present invention, a modification of the heat pack material 216 is also provided. In particular, as shown in FIG. 13, the heating pack housing 202 includes an upper heating pack housing 202a and a lower heating pack housing 202b.
Heat absorbing material 216, typically carbon ferrite, can be removed from upper heating pack housing 202a. In one specific embodiment, the heat absorbing material is removed from the entire upper heating pack housing 202a. FIG. 19 shows ΔG ′, G
The observed trends in changes in the amount of heat absorbing material 216 removed from the _center and upper heating pack housing 202a are shown schematically.

<Change of Combination of Variables> As described above, each of the variables of the Czochral skipper changes _Gcenter and △ G ′ in a nonlinear manner individually. Therefore, △ G '≦
To obtain 0 and G _center ≧ 2.5, trial and error and / or simulation are used to change all of the variables.

According to the present invention, the following steps can be performed to improve a Czochralski puller. Referring to FIG. 20, at block 1200, at least one of the thermal barrier position a, the thermal barrier design and the heater position b has a temperature gradient along the axis at the ingot-melt boundary from the cylindrical edge. It is selected to form at least approximately the same as the temperature gradient at the diffusion distance. In particular, the position a of the thermal barrier 214, the arrangement of the thermal barrier 214, and the position b of the heater are all Δ
G ′ is chosen to be minimized. However, during this step, the temperature gradient in the axis (G _center ) can also be reduced.

Subsequently, at block 1210, at least one of the position c of the cooling jacket 232, the amount of heat absorbing material 216 in the heating pack 202 and the position d of the furnace 206 determine the temperature at the ingot-melt boundary at the axis. 2.5 ° K gradient
/ Mm. In particular, the cooling jacket distance c, the amount of heat absorbing material and the furnace distance d
_Are all selected to maximize _Gcenter .

Unfortunately, G _center at block 1210
Maximization can cause △ G ′ to increase. Therefore,
At block 1220, a test is performed to determine if △ G ′ is less than or equal to zero. If so,
Czochral skippers are optimized. If not, then the heater power is reduced in block 1230 until block △ G ′ is substantially less than zero.
00 and the steps of block 1210 are performed again.

<Detailed Design of Heat Blocker> The design of the heat blocker 214 shown in FIG. 13 can have a profound effect on the performance of the Czochralski puller. Accordingly, a detailed design of the thermal barrier 214 will be described below.

FIG. 21 is an enlarged view of the heat shield 214 and the elements surrounding the heat shield 214 of FIG. As shown in FIG. 21, the thermal barrier 214 preferably includes a ring thermal barrier or thermal barrier housing 234 within the furnace 206. The ring-shaped thermal barrier housing 234 can include carbon-coated silicon carbide, and preferably has an internal thermal barrier housing wall 1310, an external thermal barrier housing wall 1320, and an inclined thermal barrier housing bottom 133.
0, and also preferably inclined thermal barrier housing lid 1
340 may be included. The heat shield housing includes an insulating material 1360 such as carbon ferrite therein. A support member 1350 supports the ring heat shield housing 234 in the furnace 206. The support member 1350 may also include carbon-coated silicon carbide.

As shown in FIG. 21, the internal heat shielding wall 13
10 and the external heat barrier 1320 can preferably be vertical internal and external heat barriers, respectively. The heat insulation housing bottom 1330 and the heat insulation housing lid 1340 are preferably inclined at an angle α and an angle β, respectively, with the horizontal.

In accordance with the present invention, most of the physical dimensions of the ring-shaped heat shield housing 234 can be changed to change the temperature gradient at the center of the ingot 228 relative to the edge of the ingot 228. Among the variables that can be changed are the angle α of the heat insulation housing bottom 1330, the heat insulation housing lid 1
340, the length a of the internal heat shield 1310, the distance b between the internal heat shield 1310 and the external heat shield 1320, the length c of the external heat shield 1320, the furnace 206 and the external heat shield 1320 And the distance e between the upper end of the furnace and the inclined thermal barrier housing bottom 1330.

Generally, a ring type heat insulation housing 234 is used.
Includes an insulating material 1360 therein. Insulating material 136
0 insulates the heat from the heater 204 from the ingot 228. Insulating material 1360 also stores heat radiated from ingot 228.

In particular, when the angle α is increased and other variables are the same, the temperature at the point x where the heat insulation housing wall 1310 and the heat insulation housing bottom 1330 intersect with each other can increase. The temperature at point y proximate to ingot 228 may also increase due to the increased heat radiation from ingot 228. Further, if the length a increases relative to the length c, more heat storage from the ingot can occur and the temperature at point x can increase,
The temperature at point b can increase, but the temperature gradient at the center of ingot 228 can decrease. In contrast, if the angle β increases, the temperature gradient in the center of the ingot can increase.

The position of the heat shield housing 234 with respect to the furnace 206, shown as d in FIG. 21, also affects the performance of the Czochralski puller. In particular, by reducing d, more heat conservation due to heat radiation from the ingot can occur, thereby increasing the temperature at points x and y. In addition, ingot 228
The difference in temperature gradient between the center and the edge of the ingot can be reduced, and the temperature at the center of the ingot can be reduced. Finally, FIG.
The heat insulation housing 234 and the furnace 20 indicated as e in FIG.
The on-axis distance between the six can also vary.

In particular, the heat insulation housing 2
By moving 34 upward, the distance e can thereby be reduced, the temperature gradient at the center of the ingot can be increased, and the difference between the temperature gradient between the center of the ingot and the edge of the ingot can be increased. Also increase.

Preferably, all of these variables have a temperature gradient at least equal to the temperature gradient at the diffusion distance from the cylindrical edge of the ingot (denoted as point B in FIG. 13) by the ingot-melt boundary at the axis. (Indicated as point A in FIG. 5)
Can be changed to form.

Accordingly, all of these variables are greater than 2.5 ° K / mm on the ingot axis and have a temperature gradient at least approximately identical to the temperature gradient at the diffusion distance from the cylindrical edge of the ingot. It can be changed to get at the boundaries of things.

FIGS. 22 to 25 show various arrangements of the support members 1350 which can also affect the thermal characteristics of the Czochralski puller. 22 to 25 are partially cutaway perspective views of the heat shield 214. FIG. As shown in FIG. 22, the support member 1350 includes one or more support arms 1410. In addition, as shown in FIG. 23, the support member 1350 can be a ring-type support member 1420.

The ring-shaped support member 1420 can include one or more windows 1430 therein. Window 1
430 can be an opening or a quartz window
tswindow). The ring-shaped support member can be tilted as shown.

As shown in FIG. 24, the support arm 141
The 0 may be a hollow support arm 1410 'containing an insulating material 1440 therein. Similarly, as shown in FIG. 25, the ring-shaped support member 1420 has an insulating material 14 therein.
50 may be a hollow ring-shaped support member 1420 '. It can be appreciated that the support member need not be attached to the ring heat shield housing 234 at its outer wall as shown. In addition, the location of the attachment can vary between its outer wall and its interior.

The hollow support members 1410 'and 1420'
1410 or 14 for producing respectively
The addition of insulating material within 20 can insulate heater 204 from ingot 228 and also provide fast heat transfer from the ingot surface. Thus, the temperature gradient at the center of the ingot can be increased, and the difference in temperature gradient between the center of the ingot and the edge of the ingot can also be reduced.

The temperature gradient at the ingot-melt boundary is greater than 2.5 ° K / mm on the ingot axis and at least approximately the same as the temperature gradient at the diffusion distance from the cylindrical edge of the ingot. When the Ralski puller is modified, the adjustment of α, a and c is larger than the temperature gradient at the diffusion distance from the cylindrical edge.
It has been found that the formation of a temperature gradient at the melt boundary can be adjusted. Further, the adjustment of β and the provision of insulating material within the support arm can adjust the on-axis temperature gradient. Thus, α, a, and c can be increased to reduce ΔG ′ in the design of thermal barrier 214. Then β can be increased to obtain a sufficiently high G _center, and more insulating material can be added. One specific design of the ring-shaped heat insulation housing is a 125 mm long external heat insulation housing wall 13.
20, 55 mm internal heat-insulating housing wall 13 of length a
10, a distance d of 7.4 mm and an angle α of 5 °.

[0088]

As described above, according to the present invention, a plurality of defect-free single crystal silicon wafers manufactured from one silicon ingot can be produced, and each defect-free silicon wafer has a vacancy mass and an interstitial. There are no lumps.

Therefore, by maintaining the ratio of the pulling rate to the temperature gradient at the ingot-melt boundary between the upper and lower boundaries, the lump defect is reduced to a vacancy in the center of the wafer.
There is an effect that it is possible to suppress the defect in the abundant region or to produce a defect-free silicon wafer after being removed.

Although the present invention has been described in detail with reference only to the specific examples described above, it is apparent to those skilled in the art that various changes and modifications can be made within the technical idea of the present invention. It is obvious that such variations and modifications belong to the appended claims.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a Czochralski puller for growing a single crystal silicon ingot.

FIG. 2 is a diagram illustrating the Boronkov theory.

FIG. 3 is a diagram schematically illustrating the manufacture of a wafer having a vacancy-rich region in the center and a defect-free region between the vacancy-rich region and the edge of the wafer.

FIG. 4 is a diagram schematically illustrating the manufacture of a wafer having a vacancy-rich region in the center and a defect-free region between the vacancy-rich region and the edge of the wafer.

FIG. 5 is a diagram schematically illustrating the manufacture of a wafer having a vacancy-rich region in the center and a defect-free region between the vacancy-rich region and the edge of the wafer.

FIG. 6 is a diagram schematically illustrating the manufacture of a wafer having a vacancy-rich region in the center and a defect-free region between the vacancy-rich region and the edge of the wafer.

FIG. 7 is a diagram schematically illustrating the manufacture of a wafer having a vacancy-rich region in the center and a defect-free region between the vacancy-rich region and the edge of the wafer.

FIG. 8 schematically illustrates the manufacture of a lump-free wafer.

FIG. 9 schematically illustrates the manufacture of a lump-free wafer.

FIG. 10 schematically illustrates the manufacture of a lump-free wafer.

FIG. 11 schematically illustrates the manufacture of a wafer without lumps.

FIG. 12 schematically illustrates the manufacture of a lump-free wafer.

FIG. 13 is a schematic sectional view showing a Czochral skipper improved by the present invention and a method for improving the same.

FIG. 14 illustrates a comparison between the radius temperature gradient as a function of distance in a conventional manner and the radius temperature gradient as a function of distance according to the invention.

FIG. 15 illustrates the trend observed with changes in temperature gradient as a function of the distance between the thermal barrier bottom and the furnace top according to the present invention.

FIG. 16 illustrates the trend observed with changes in temperature gradient as a function of the distance between the furnace top and heater top according to the present invention.

FIG. 17 illustrates the trend observed with changes in temperature gradient as a function of the distance between the furnace and the seal according to the invention.

FIG. 18 illustrates the trend observed in the change in temperature gradient as a function of the distance between the furnace top and the bottom of the cooling jacket according to the present invention.

FIG. 19 illustrates trends observed in changes in temperature gradient as a function of the amount of heat absorbing material removed from the upper heating pack housing according to the present invention.

FIG. 20 is a flow chart showing the steps for changing a variable in a combination according to the present invention.

21 is a schematic cross-sectional view showing an enlarged view of the heat shield of FIG.

FIG. 22 is a partially cutaway perspective view of an embodiment of a heat shield according to the present invention.

FIG. 23 is a partially cutaway perspective view of an embodiment of a heat shield according to the present invention.

FIG. 24 is a partially cutaway perspective view of an embodiment of a heat shield according to the present invention.

FIG. 25 is a partially cutaway perspective view of an embodiment of a heat shield according to the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 Czochral skipper 102 Heating pack 104 Heater 106 Furnace 108 Susceptor 110 Rotation axis 112 First direction 114 Heat blocker 116 Heat absorbing substance 120 Crystal pulling axis 120a Seed holder 122 Second direction 124 Seed crystal 126 Melt 128 Ingot 130 Chamber Sealing body 132 Cooling jacket 134 Boundary 200 Czochralski puller 202 Heating pack housing 202a Upper heating pack housing 202b Lower heating pack housing 204 Heater 206 Furnace 208 Susceptor 210 Rotating shaft 212 First direction 214 Thermal barrier 216 Heat absorbing material 220 Crystal pulling Axis 220a Seed holder 222 Second direction 424 Seed crystal 226 Melt 228 Ingot 230 Chamber seal 2 2 Cooling jacket 234 Thermal barrier lid 236 Air 238 Boundary 1310 Internal thermal barrier housing bottom 1320 External thermal barrier housing wall 1330 Thermal barrier housing bottom 1340 Thermal barrier housing lid 1350 Support member 1360 Insulation material 1410 Support arm 1410 'Hollow support arm 1420 Ring Mold support member 1420 ′ Hollow ring support member 1430 Window 1440 Hollow ring support arm 1450 Insulating material

Continued on the front page (54) [Title of the Invention] Czochral skipper for the production of single crystal silicon ingots by adjusting the temperature gradient at the center and at the edge of the ingot-melt boundary, thermal insulation for Czochral skipper Method of improving body and Czochralski puller

Claims (66)

[Claims] An inner heat shield housing wall, an outer heat shield housing wall, an inclined heat shield housing bottom, and a heat shield housing lid extending between the inner heat shield housing wall and the outer heat shield housing wall; A ring-shaped heat-insulating housing containing an insulating material therein, and a support member arranged to support the heat-insulating housing in the furnace; A thermal barrier for Czochralski pullers that grows single crystal silicon ingots. 2. An inner heat-shielding housing wall and an outer heat-shielding housing wall, wherein the inner heat-shielding housing wall and the outer heat-shielding housing wall are perpendicular to each other. A thermal barrier for growing a single crystal silicon ingot, including the furnace holding the silicon melt of claim 1. 3. The single crystal silicon including a furnace holding the silicon melt according to claim 1, wherein the support member includes at least one support arm extending to the ring type heat insulation housing. A thermal barrier that grows ingots. 4. The furnace as claimed in claim 3, wherein the at least one support arm is at least one hollow support arm containing an insulating material therein. Thermal barrier for growing single crystal silicon ingots. 5. The thermal barrier of claim 1, wherein the support member comprises a ring-type support member, including a furnace holding the silicon melt. 6. The furnace as claimed in claim 5, wherein the ring-shaped support member includes an inner support member wall and an outer support member wall containing an insulating material therebetween. A thermal barrier that grows single crystal silicon ingots. 7. The heat for growing a single crystal silicon ingot including a furnace holding the silicon melt according to claim 5, wherein the ring-type support member includes at least one window therein. Blocker. 8. The thermal barrier for growing a single crystal silicon ingot including a furnace holding the silicon melt according to claim 5, wherein the ring-type support member is a tilted ring-type support member. body. 9. The monocrystalline silicon ingot further comprising means for pulling a seed holder from the furnace, thereby pulling a monocrystalline silicon ingot from the silicon melt, the monocrystalline silicon ingot having an axis and a cylindrical edge, and The melt and the ingot are separated by an ingot-melt boundary, the heat shield housing lid is an inclined heat shield housing lid, and at least the length of the inner wall, the first corner and the second corner. The length of the internal heat-insulating housing wall, one selected such that the temperature gradient at the ingot-melt interface at the axis forms at least approximately the same as the temperature gradient at the diffusion distance from the cylindrical edge; The inclined heat shielding bottom forming a first angle with the horizontal, and the inclined heat shielding lid forming a second angle with the horizontal. The silicon melt held heat shielding body for growing a single crystal silicon ingot, including the furnace according to claim 1. 10. A seal, a furnace in the seal holding a silicon melt, a seed holder in the seal adjacent to the furnace, a heater in the seal surrounding the furnace, and an internal heat source. Including an insulating material therein, including a heat insulating housing wall, an external heat insulating housing wall, an inclined heat insulating housing bottom, and a heat insulating housing lid extending between the internal heat insulating housing wall and the external heat insulating housing wall. A Czochralski puller for growing a single crystal silicon ingot, comprising: a ring-shaped heat insulation housing in a furnace; and a support member for supporting the heat insulation housing in the furnace. 11. An internal heat shielding housing wall and an external heat shielding housing wall in which the internal heat shielding housing wall and the external heat shielding housing wall are perpendicular to each other, wherein the heat shielding housing lid is an inclined heat shielding housing lid. The Czochralski puller for growing the single crystal silicon ingot according to claim 10. 12. The unit according to claim 10, further comprising a heating pack surrounding the heater, wherein the support member supports the ring-shaped heat insulation housing from the heating pack in the furnace. Czochral skipper for growing crystalline silicon ingots. 13. The Czochralski puller for growing the single crystal silicon ingot according to claim 10, wherein the support member includes at least one support arm extending to the ring type heat insulation housing. . 14. The single crystal silicon ingot according to claim 13, wherein the at least one support arm is at least one hollow support arm including an insulating material therein. Czochral skipper. 15. The Czochralski puller for growing the single crystal silicon ingot according to claim 10, wherein the support member includes a ring-type support member. 16. The single crystal silicon ingot according to claim 15, wherein the ring-shaped support member includes an inner support member wall and an outer support member wall including an insulating material therebetween. Czochral skipper. 17. The Czochralski puller for growing the single crystal silicon ingot according to claim 15, wherein the ring-type support member includes at least one window therein. 18. The Czochralski puller for growing the single crystal silicon ingot according to claim 15, wherein the ring-type support member is an inclined ring-type support member. 19. The heat pack includes an upper heat pack housing and a lower heat pack housing, wherein the lower heat pack housing is filled with a heat absorbing material, and wherein the upper heat pack housing is at least partially filled with the heat absorbing material. 13. The Czochral skipler for growing a single crystal silicon ingot according to claim 12, wherein the Czochral skipper is not filled. 20. The Czochralski puller for growing the single crystal silicon ingot according to claim 19, wherein the upper heating pack housing has the heat absorbing material removed. 21. A means for pulling a seed holder from the furnace and thereby pulling a single crystal silicon ingot from the silicon melt, the single crystal silicon ingot having an axis and a cylindrical edge, wherein the silicon holder has a cylindrical edge. The melt and the ingot are separated by an ingot-melt boundary, and the heat shield housing lid is an inclined heat shield housing lid, and at least one of the length of the inner wall, the first corner, and the second corner is provided. The length of the internal heat-insulating housing wall, horizontal, selected so that the temperature gradient at the ingot-melt boundary at the axis can be at least approximately equal to the temperature gradient at the diffusion distance from the cylindrical edge. And the inclined heat shielding bottom forming a first angle between the inclined heat shielding bottom and the horizontal. Section 1
A Czochral skipper for growing the single-crystal silicon ingot according to 0. 22. A seal, a furnace in the seal containing a silicon melt, a seed holder in the seal adjacent to the furnace, a heater in the seal surrounding the furnace, the furnace. And a heat shield between the seed holder, a cooling jacket between the heat shield and the seed holder, and a heating pack in the sealed body surrounding the heater, wherein the heating pack is an upper heating pack housing. A lower heat pack housing, wherein the lower heat pack housing is filled with a heat absorbing material, the upper heat pack housing is at least partially filled with the heat absorbing material, and wherein the upper heat pack housing is at least partially For growing a single crystal silicon ingot characterized by not being filled with the heat absorbing material Pooler. 23. The chock for growing the single crystal silicon ingot according to claim 22, wherein the thermal barrier extends from the upper heating pack housing to between the furnace and the seed holder. Lalski Puller. 24. A seal, a furnace in the seal containing a silicon melt, a seed holder in the seal adjacent to the furnace, a heater in the seal surrounding the furnace, and the heater. A heating pack within the enclosure surrounding the heat shield between the furnace and the seed holder; a cooling jacket between the heat shield and the seed holder; and pulling the seed holder out of the furnace, thereby forming the silicon. Means for pulling a single crystal silicon ingot from the melt, the single crystal silicon ingot having a shaft and a cylindrical edge, wherein the silicon melt and the ingot are separated by an ingot-melt boundary. The position of the heat shield, the arrangement of the heat shield, the position of the heater, the arrangement of the cooling jacket, the position of the furnace, At least one of the arrangement of the heat packs and the power applied to the heater is greater than 2.5 K / mm on the ingot axis and has a temperature gradient at least approximately the same as the temperature gradient at the diffusion distance from the cylindrical edge of the ingot. Ingot-
A Czochralski puller for growing a single crystal silicon ingot, characterized in that it has been selected to be obtainable at a melt boundary. 25. The furnace includes a furnace upper end and a furnace lower end, the heat shield includes a heat shield upper end and a heat shield bottom, and a position of the heat shield is a distance between the heat shield bottom and the furnace upper end. 25. The Czochralski puller for growing the single crystal silicon ingot according to claim 24, wherein the Czochralski puller is selected by changing: 26. The thermal barrier of claim 26, wherein the thermal barrier includes a thermal barrier top and a thermal barrier bottom, and the arrangement of the thermal barrier is selected by providing a thermal barrier lid to the thermal barrier. 25. A Czochralski puller for growing the single crystal silicon ingot according to 24. 27. The heat shield lid extends in the furnace between the inner heat shield housing wall, the outer heat shield housing wall, the inclined heat shield housing bottom, and the inner heat shield housing wall and the outer heat shield housing wall. 27. The Czochral for growing the single crystal silicon ingot according to claim 26, further comprising a ring-shaped heat insulation housing including a heat insulation housing lid, wherein the heat insulation housing contains an insulating material therein. Skipper. 28. The method of claim 27, wherein the inclined heat shield housing defines a fixed angle from the horizontal, and the arrangement of the heat shields is selected by changing the angle. Czochral skipper for growing the single crystal silicon ingot according to the above. 29. The furnace includes a furnace top and a furnace bottom, the heater includes a heater top and a heater bottom, and a position of the heater is selected by a change in a distance between the furnace top and the heater top. 25. A Czochral skipper for growing the single crystal silicon ingot according to claim 24. 30. The Czochral for growing the single crystal silicon ingot according to claim 29, wherein the position of the heater and the position of the furnace change together perpendicularly to the sealing body. Skipper. 31. The furnace includes a furnace top and a furnace bottom, the cooling jacket includes a cooling jacket top and a cooling jacket bottom, and a position of the cooling jacket defines a distance between the furnace top and the cooling jacket bottom. 25. The Czochralski puller for growing the single crystal silicon ingot according to claim 24, wherein the Czochralski puller is selected by changing. 32. The heating pack includes an upper heating pack housing and a lower heating pack housing, each of which is filled with a heat absorbing material, and wherein the arrangement of the heating packs includes at least a heat absorbing material from the upper heating pack housing. 25. The Czochralski puller for growing the single crystal silicon ingot according to claim 24, wherein the Czochral skipper is selected by being partially removed. 33. A temperature gradient at the ingot-melt boundary at the axis where at least one of the location of the thermal barrier, the arrangement of the thermal barrier and the location of the heater is diffused from the cylindrical edge. At least one of the arrangement of the cooling jackets, the location of the furnace and the arrangement of the heating packs at the ingot-melt boundary at the axis is selected to form at least approximately the same as the temperature gradient at a distance. 25. The Czochralski puller for growing a single crystal silicon ingot according to claim 24, wherein the temperature gradient is selected to be greater than 2.5 K / mm. 34. The furnace includes an upper end and a lower end of the furnace, the thermal barrier includes a thermal upper end and a thermal barrier, the heater includes a heater upper and a heater bottom, and a position of the thermal barrier. Is selected by changing the distance between the heat insulation bottom and the furnace top, the arrangement of the heat insulation is selected by providing a heat insulation lid to the heat insulation bottom, and the position of the heater is changed to And by changing the distance between the top of the heater and the position of the heat shield,
The arrangement of the heat shields and the location of the heater are selected such that the temperature gradient at the ingot-melt boundary at the axis is at least approximately the same as the temperature gradient at the diffusion distance from the cylindrical edge. 4. The method according to claim 3, wherein
3. A Czochralski puller for growing the single crystal silicon ingot according to 3. 35. The furnace includes a furnace top and a furnace bottom; the heater includes a heater top and a heater bottom; the cooling jacket includes a cooling jacket top and a cooling jacket bottom; An upper heating pack housing and a lower heating pack housing filled with an absorbent material, wherein the position of the heater is selected by changing the distance between the furnace top and the heater top;
The position of the heater and the position of the furnace change simultaneously perpendicularly to the seal, and the position of the cooling jacket is selected by changing the distance between the furnace top and the bottom of the cooling jacket, the heating An arrangement of packs is selected by removing at least a portion of the heat absorbing material from the upper heating pack housing, and an arrangement of the cooling jacket, the location of the furnace, all locations of the heater and the furnace and the location of the heater. The arrangement of the heating packs is such that the temperature gradient at the ingot-melt boundary at the axis is 2.5 ° K / m
35. The Czochralski puller for growing the single crystal silicon ingot according to claim 34, wherein the Czochral skipper is selected to be larger than m. 36. A seal, a furnace in the seal holding a silicon melt, a seed holder in the seal adjacent to the furnace, a heater in the seal surrounding the furnace, and the heater. A heating pack within the enclosure surrounding the heat shield between the furnace and the seed holder; a cooling jacket between the heat shield and the seed holder; and pulling the seed holder out of the furnace, thereby forming the silicon. Means for pulling a single crystal silicon ingot from the melt, the single crystal silicon ingot having a shaft and a cylindrical edge, wherein the silicon melt and the ingot are separated by an ingot-melt boundary. The position of the heat shield, the arrangement of the heat shield, the position of the heater, the arrangement of the cooling jacket, the position of the furnace, At least one of the arrangement of the heat packs and the power applied to the heater is selected to be able to obtain an ingot-melt interface that is flat or swelling with respect to the silicon melt. Czochral skipper for growing single crystal silicon ingots. 37. The furnace includes a furnace upper end and a furnace lower end,
The heat shield includes a heat shield top and a heat shield bottom, and a position of the heat shield is selected by changing a distance between the heat shield bottom and the furnace top. 36. A Czochralski puller for growing the single crystal silicon ingot according to 36. 38. The heat shield includes a heat shield upper end and a heat shield bottom, and an arrangement of the heat shields is selected by providing a heat shield lid to the heat shield bottom. Item 37. A Czochralski puller for growing the single crystal silicon ingot according to Item 36. 39. The heat shield lid extends in the furnace between the inner heat shield housing wall, the outer heat shield housing wall, the inclined heat shield housing bottom and the inner heat shield housing wall and the outer heat shield housing wall. 39. The chock for growing the single crystal silicon ingot according to claim 38, further comprising a ring type heat insulation housing including a heat insulation housing lid, wherein the heat insulation housing contains an insulating material therein. Lalski Puller. 40. The method according to claim 39, wherein the inclined heat-insulating housing is defined by a constant angle from horizontal, and the arrangement of the heat-insulating body is selected by changing the angle. A Czochralski puller for growing the single crystal silicon ingot. 41. The furnace includes a furnace top and a furnace bottom, the heater includes a heater top and a heater bottom, and a position of the heater is selected by a change in a distance between the furnace top and the heater top. 37. A Czochralski puller for growing the single crystal silicon ingot according to claim 36. 42. The Czochral for growing the single crystal silicon ingot according to claim 41, wherein the position of the heater and the position of the furnace change together perpendicularly to the sealing body. Skipper. 43. The furnace includes a furnace upper end and a furnace lower end,
The method according to claim 36, wherein the cooling jacket includes a cooling jacket top and a cooling jacket bottom, and a position of the cooling jacket is selected by changing a distance between the furnace top and the cooling jacket bottom. A Czochralski puller for growing the single crystal silicon ingot according to any one of the preceding claims. 44. The heat pack includes an upper heat pack housing and a lower heat pack housing, each of which is filled with a heat absorbing material, and wherein the arrangement of the heat packs comprises at least one of the heat absorbing material from the upper heat pack housing. 37. The Czochralski puller for growing the single crystal silicon ingot according to claim 36, wherein the portion is selected by being removed. 45. A seal, a furnace in the seal containing the silicon melt, a seed holder in the seal adjacent to the furnace, a heater in the seal surrounding the furnace, and the heater. A heating pack in the enclosure, a thermal barrier between the furnace and the seed holder, a cooling jacket between the thermal barrier and the seed holder, and pulling the seed holder out of the furnace, thereby removing the silicon. Means for pulling a single crystal silicon ingot from the melt, and further improving a Czochral skipper for growing a defect-free single crystal silicon ingot, further comprising: The arrangement of the heat shield, the position of the heater, the arrangement of the cooling jacket, the position of the furnace, the arrangement of the heating pack, and At least one of the powers applied to the heater is greater than 2.5 K / mm on the ingot axis and the ingot-melt has a temperature gradient at least approximately the same as the temperature gradient at the diffusion distance from the cylindrical edge of the ingot. A method for improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of vaccinia chunks and interstitial chunks, comprising a selection step of selecting to obtain at a boundary. 46. The furnace includes a furnace upper end and a furnace lower end,
The heat shield includes a heat shield top and a heat shield bottom, and the selecting step changes a distance between the heat shield bottom and the furnace top, so that a position of the heat shield is selected. The method for improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of the vacancy mass and the interstitial mass according to claim 45, comprising the step of: 47. The heat shield includes a heat shield upper end and a heat shield bottom, and the selecting step provides the heat shield bottom and the heat shield lid, whereby the arrangement of the heat shield is selected. 46. The method of claim 45, further comprising the step of: growing the defect-free single crystal silicon ingot free of the vacancy mass and the interstitial mass. 48. The heat shield lid extends in the furnace between the inner heat shield housing wall, the outer heat shield housing wall, the inclined heat shield housing bottom, and the inner heat shield housing wall and the outer heat shield housing wall. A ring-shaped heat insulation housing including a heat insulation housing lid, wherein the heat insulation housing contains an insulating material therein, the inclined heat insulation housing bottom is limited at a certain angle from horizontal, and 48. The defect-free single crystal silicon ingot without vacancy and intersticial masses according to claim 47, wherein the selecting step comprises changing the corners, thereby selecting the arrangement of the thermal barriers. Method of improving the Czochralski puller for growing corn. 49. The furnace includes a furnace upper end and a furnace lower end;
The method of claim 1, wherein the heater includes a heater top and a heater bottom, and wherein the selecting includes changing a distance between the furnace top and the heater top, thereby selecting a position of the heater. 45. The method for improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of the vacancy mass and the interstitial mass according to 45. 50. The vaccinia mass and vaccinium mass of claim 49, wherein the selecting further comprises changing the position of the heater and the position of the furnace together perpendicular to the seal. A method for improving a Czochralski puller for growing a defect-free single crystal silicon ingot without an interstitial mass. 51. The furnace includes a furnace upper end and a furnace lower end,
The cooling jacket includes a cooling jacket top and a cooling jacket bottom, and the selecting step includes changing a distance between the furnace top and the cooling jacket bottom, thereby selecting a position of the cooling jacket. The method for improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of the vacancy mass and the interstitial mass according to claim 45. 52. The heat pack includes an upper heat pack housing and a lower heat pack housing each filled with a heat absorbing material, and the selecting step removes at least a portion of the heat absorbing material from the upper heat pack housing. 47. The method of claim 45, further comprising the step of selecting an arrangement of the heating packs by growing the defect-free single crystal silicon ingot without the vacancy and interstitial masses. Improvement method. 53. The method according to claim 53, wherein at least one of the position of the heat shield, the arrangement of the heat shield, and the position of the heater has a temperature gradient at the ingot-melt boundary on the axis. A first selected to form at least approximately the same as the temperature gradient at the diffusion distance from the edge of
The selecting step and at least one of the arrangement of the cooling jackets, the position of the furnace and the arrangement of the heating packs form a temperature gradient at the ingot-melt boundary at the axis greater than 2.5 K / mm. 46. The method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of vacancies and interstices as claimed in claim 45, comprising a second selection step selected as follows. . 54. A method according to claim 54, wherein the furnace includes a furnace upper end and a furnace lower end, the thermal barrier includes a thermal barrier upper end and a thermal barrier bottom, the heater includes a heater upper and a heater bottom, and a position of the thermal barrier. Is selected by changing the distance between the heat insulation bottom and the furnace top, the arrangement of the heat insulation is selected by providing a heat insulation lid to the heat insulation bottom, and the position of the heater is changed to And by changing the distance between the upper end of the heater and the heat so that the first selection step can be formed at least approximately identical to the temperature gradient at the ingot-melt boundary at the axis. 54. The defect-free single crystal silicon ingot free of the vacancy mass and the interstitial mass according to claim 53, further comprising a step of selecting a position of a blocker, an arrangement of the thermal blockers, and a position of the heater. Method of improving the Czochralski puller for growing plants. 55. The furnace includes a furnace top and a furnace bottom; the heater includes a heater top and a heater bottom; the cooling jacket includes a cooling jacket top and a cooling jacket bottom; An upper heating pack housing and a lower heating pack housing filled with an absorbent material, wherein the position of the heater is selected by changing the distance between the furnace top and the heater top;
The position of the heater and the position of the furnace change simultaneously perpendicular to the seal and the position of the cooling jacket is selected by changing the distance between the furnace top and the bottom of the cooling jacket, An arrangement of packs is selected by removing at least a portion of a heat absorbing material from the upper heating pack housing, and
The arrangement of the cooling jackets, the position of the furnace, the position of the heater and all of the furnaces such that the selecting step forms a temperature gradient at the ingot-melt boundary on the axis greater than 2.5 K / mm. 55. The improvement of a Czochralski puller for growing a defect-free single crystal silicon ingot free of vacancies and interstices according to claim 54, comprising selecting an arrangement of the heating packs. Method. 56. A seal, a furnace in the seal containing a silicon melt, a seed holder in the seal adjacent to the furnace, a heater in the seal surrounding the furnace, and the heater. A heating pack in the enclosure, a thermal barrier between the furnace and the seed holder, a cooling jacket between the thermal barrier and the seed holder, and pulling the seed holder out of the furnace, thereby removing the silicon. In improving a Czochral skipper further including means for pulling a single-crystal silicon ingot from a melt into a Czochral skipper for growing a defect-free single-crystal silicon ingot, the position of the thermal barrier, Arrangement of blockers, position of the heater, arrangement of the cooling jacket, position of the furnace, arrangement of the heating pack and the A step of selecting such that at least one of the powers applied to the rotor is flat or that an ingot-melt boundary swelling against the silicon melt can be obtained. An improved method of growing a Czochralski puller for growing defect-free single crystal silicon ingots without vacancies and interstices. 57. The furnace includes a furnace upper end and a furnace lower end,
The heat shield includes a heat shield top and a heat shield bottom, and the selecting step changes a distance between the heat shield bottom and the furnace top, so that a position of the heat shield can be selected. 57. The method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of the vacancy mass and the interstitial mass according to claim 56, comprising a step. 58. The heat shield includes a heat shield upper end and a heat shield bottom, and the selecting step provides a heat shield lid to the heat shield bottom, so that the arrangement of the heat shields can be selected. The method for improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of the vacancy mass and the interstitial mass according to claim 56, comprising the step of: 59. The heat shield lid extends in the furnace between the inner heat shield housing wall, the outer heat shield housing wall, the inclined heat shield housing bottom and the inner heat shield housing wall and the outer heat shield housing wall. A ring-shaped heat insulation housing including a heat insulation housing lid, wherein the heat insulation housing includes an insulating material therein, and the inclined heat insulation housing bottom is limited at a predetermined angle from horizontal,
59. The defect-free single crystal silicon free of vacancies and interstitial clumps according to claim 58, wherein the selecting step comprises changing the corners, thereby selecting an arrangement of the thermal barrier. An improved method of Czochralski puller for growing ingots. 60. The furnace includes a furnace top and a furnace bottom, the heater includes a heater top and a heater bottom, and the selecting step changes a distance between the furnace top and the heater top, whereby The method for improving a Czochralski puller for growing a defect-free single-crystal silicon ingot free of the vacancy mass and the interstitial mass according to claim 56, comprising selecting a position of the heater. 61. The vacancy mass of claim 60, wherein the selecting step further comprises changing the position of the heater and the position of the furnace together perpendicular to the seal. And a method for improving a Czochralski puller for growing a defect-free single crystal silicon ingot having no interstitial mass. 62. The furnace includes a furnace upper end and a furnace lower end,
The cooling jacket includes a cooling jacket top and a cooling jacket bottom, and the selecting step includes changing a distance between the furnace top and the cooling jacket bottom, thereby selecting a position of the cooling jacket. 57. The method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of the vacancy mass and the interstitial mass according to claim 56. 63. The heating pack includes an upper heating pack housing and a lower heating pack housing each filled with a heat absorbing material, and the selecting step removes at least a portion of the heat absorbing material from the upper heating pack housing. Selecting the arrangement of the heating packs by heating the defect-free single crystal silicon ingot without the vacancies and interstices. 60. The method according to claim 56, further comprising the steps of: Improvement method. 64. The method according to claim 64, wherein at least one of the position of the heat shield, the arrangement of the heat shield, and the position of the heater has a temperature gradient at the ingot-melt boundary on the axis. A first selection step selected to form at least approximately the same as the temperature gradient at the diffusion distance from the edge of the; and at least one of the arrangement of the cooling jackets, the location of the furnace and the arrangement of the heating packs at the axis. Temperature gradient at the ingot-melt boundary of 2.5 °
The method for growing a defect-free single crystal silicon ingot free of the vacancy mass and the interstitial mass according to claim 56, further comprising a second selection step selected so as to be able to be formed larger than K / mm. How to improve the Czochralski puller. 65. The furnace, comprising: a furnace upper end and a furnace lower end; wherein the heat shutoff body includes a heat shutoff upper end and a heat shutoff bottom; wherein the heater comprises a heater upper end and a heater bottom; The location is selected by a change in the distance between the heat shield bottom and the furnace top, the arrangement of the heat shields is selected by providing a heat shield lid to the heat shield bottom, and the heater location is selected by the furnace. Selected by varying the distance between the top and the top of the heater, and wherein the first selection step is such that the temperature gradient at the axis of the ingot-melt at the axis is offset from the edge of the cylinder. Position of the thermal barrier to form at least approximately the same as the temperature gradient at the diffusion distance,
65. The chalk for growing a defect-free single crystal silicon ingot free of the vacancy mass and the interstitial mass according to claim 64, comprising a step of selecting an arrangement of the heat shields and a position of the heater. How to improve Ralski Puller. 66. The furnace includes a furnace top and a furnace bottom; the heater includes a heater top and a heater bottom; the cooling jacket includes a cooling jacket top and a cooling jacket bottom; An upper heating pack housing and a lower heating pack housing filled with an absorbent material, wherein the position of the heater is selected by changing the distance between the furnace top and the heater top;
Wherein the position of the heater and the position of the furnace change simultaneously perpendicularly to the seal, and the position of the cooling jacket is selected by changing the distance between the top of the furnace and the bottom of the cooling jacket; Is selected by removing at least a portion of the heat absorbing material from the upper heating pack housing, and wherein the second selecting step is such that the temperature gradient at the ingot-melt boundary at the axis is 2. 66. The method of claim 65, further comprising selecting an arrangement of the cooling jackets, a location of the furnace, a location of all of the heaters and the furnace, and an arrangement of the heating packs so as to be greater than 5 K / mm. Modification of a Czochralski puller for growing a defect-free single crystal silicon ingot without the vacancy and interstitial mass described in Method.