KR100331552B1 - Czochralski Pullers and Pulling Methods for Manufacturing Monocrystalline Silicon Ingots by Controlling Temperature Gradients at the Center and Edge of an Ingot-Melt Interface - Google Patents

Abstract

The present invention provides a Czochralski for obtaining a temperature gradient greater than 2.5 ° K / mm in the ingot axis, and at the ingot-melt boundary a temperature gradient equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot. Improvements in the elements of the fuller improve the Czochralski puller for the production of defect-free single crystal silicon ingots free of baconic and interstitial agglomerates. The temperature gradient in the ingot axis is greater than 2.5 ° K / mm, and by allowing a temperature gradient equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot to be obtained at the ingot-melt boundary, flat or silicon Convex ingot-melt boundaries can be obtained for the melt. This raised ingot can be cut to include point defects, but result in a large number of defect free wafers without vacancy agglomerates and interstitial agglomerates.

Description

Czochralski puller, a train group for the Czochralski puller, and a method for improving the Czochralski puller for the production of single crystal silicon ingots by controlling the temperature gradient at the center and the edge of the ingot-melt boundary. Pulling Methods for Manufacturing Monocrystalline Silicon Ingots by Controlling Temperature Gradients at the Center and Edge of an Ingot-Melt Interface}

TECHNICAL FIELD The present invention relates to a Czochralski puller as a method and apparatus for manufacturing a microelectronic device, and more particularly to a choke for the production of a single crystal silicon ingot by controlling the temperature gradient at the center and the edge of the ingot-melt boundary. Ralski Puller The present invention relates to a train group for the Czochralski puller and a method for improving the Czochralski puller.

Integrated circuits are widely used by consumers and widely used commercially. Integrated circuits are generally manufactured from single crystals. As the integration density of integrated circuits continues to increase, it becomes increasingly important to provide high quality single crystal semiconductor materials for integrated circuits. Integrated circuits are typically fabricated by fabrication of large single crystal silicon ingots, ingot slicing onto a wafer, performing numerous microelectronic manufacturing processes on the wafer, and cutting the wafer into packaged discrete integrated circuits. Since the purity and crystallinity of silicon ingots have a significant impact on the performance of the final integrated circuit device manufactured therefrom, efforts have been made to manufacture ingots and wafers with a reduced number of defects.

A general method of manufacturing a conventional single crystal silicon ingot is now described. An overview of this method is shown in Chapter 1, pages 1-35 of the textbook 'Silicon Processing for the VLSI Era, Volume 1, Process Technology', written in 1986 by Wolf and Tauber, and a detailed description can be found here. do. In the production of single crystal silicon, electronic grade polycrystals are converted to single crystal silicon ingots. Polycrystalline silicon, such as quartz, is refined to electronic grade polycrystalline silicon. Purified electron grade polycrystalline silicon is grown into single crystal ingot using Czochralski (CZ) method or Plotzone (FZ) technique. The present invention relates to the fabrication of silicon ingots using the CZ technique, which is discussed below.

Czochralski growth is associated with the crystalline solidification of atoms from the liquid phase at the boundary. Specifically, the crucible is filled with electronic polycrystalline silicon, and the melt is melted. Silicon seed crystals with the correct directional tolerance descend into the silicon melt. The seed crystals are then lifted at an axially controlled speed. The seed crystals and crucibles generally rotate in opposite directions during the pulling process.

The initial lift rate is generally relatively fast, so a narrow neck of silicon is formed. The desired ingot diameter is then formed as the melting temperature is reduced and stabilized. This diameter is generally maintained by controlling the pulling speed. The pulling continues until the melt is almost exhausted, at which point a tail is formed.

1 is a schematic diagram of Czochralski Fuller. As shown in FIG. 1, Czochralski Fuller 100 includes a furnace, a crystal pulling mechanism, an environmental controller, and a computerized control system. The Czochralski furnace is commonly referred to as a hot zone furnace. The hot zone furnace includes a heater 104, a crucible 106 made of quartz, a susceptor 108 made of graphite, and a rotating shaft 110 that rotates in the first direction 112 as shown.

Cooling jacket or cooling port 132 is cooled by external cooling means such as water cooling. Train group 114 may provide additional heat distribution. Heat pack 102 is filled with heat absorbing material 116 to provide additional heat distribution.

The crystal pulling mechanism includes a crystal pulling shaft 120 that can rotate in a second direction 122 opposite to the first direction 112 as shown. The crystal raising shaft 120 includes a seed holder 120a at an end thereof. The crystal holder 120a holds the seed crystal 124 and is pulled from the melt 126 in the crucible 106 to form the ingot 128.

The environmental control system includes a chamber seal 130, a cooling jacket 132 and other flow controllers and vacuum exhaust systems not shown. Computerized control systems can be used to control the heaters, pullers and other electrical and mechanical elements.

To grow a single crystal silicon ingot, the seed crystal 124 is in contact with the silicon melt 126 and is gradually pulled in the axial direction (top). Cooling and solidification of the silicon melt 126 to single crystal silicon occurs at the boundary 134 between the ingot 128 and the melt 126. As shown in FIG. 1, the boundary 134 is concave with respect to the melt 126.

Actual silicon ingots differ from ideal single crystal ingots because they contain imperfections or defects. These defects are undesirable for manufacturing integrated circuit devices. These defects are generally classified as point defects or agglomerates (three-dimensional defects). There are two general types of caustics: bacon-sea and interstitial. In bacon point defects, one silicon atom is released from one of its normal positions in the silicon crystal lattice. Such baconcies are caused by baconsea caking. On the other hand, if atoms are found at non-lattice points (interstitial sites) of silicon crystals, they become interstitial point defects.

Point defects are generally formed at the boundary 134 between the silicon melt 126 and the ingot 128 which is solid silicon. However, as the ingot 128 is continually pulled up, the portion that was the boundary begins to cool. During cooling, the spread of bacony defects and interstitial defects merge with the defects to form bacony aggregates or interstitial aggregates. Aggregates are three-dimensional structures that arise due to the merging of point defects. Interstitial agglomerates are also called dislocation defects or D-defects. Aggregates are sometimes named according to the technique used to detect these defects. Thus, bacon agglomerates are sometimes referred to as Crystal Originated Particles (COP), Laser Scattering Tomography (LST) defects, or Flow Pattern Defects (FPD). Interstitial agglomerates are also known as large / dislocation (L / D) agglomerates. A discussion of defects in single crystal silicon is provided in Chapter 2 of the aforementioned textbook by Wolf and Tauber, see details here.

It is well known that many parameters need to be controlled to grow high purity ingots with a low number of defects. For example, it is well known to control the temperature gradient in the pulling rate and hot zone structure of seed crystals. Boron Cove's theory shows that the ratio of V to G (referred to as V / G) determines the concentration of point defects in the ingot, where V is the pulling rate of the ingot and G is the temperature gradient at the ingot-melt boundary. to be. Boron Cove's theory is described in detail in Boron Cove's The Mechanism of Swirl Defects Formation in Silicon (Journal of Crystal Growth, Vol. 59, 1982, pp. 625-643).

The application of the Boron Cove theory is the inventor of the present application at the Second International Symposium on Advanced Science and Technology of Silicon Material on November 25-29, 1996. It is presented on page 519 of the paper, Effect of Crystal Defects on Device Characteristics. In Figure 15 of the paper, which is shown again in FIG. Boron Cove's theory shows that the occurrence of vacancy / interstitial mixing in the wafer is determined by V / G. More specifically, vacancy-rich ingots are formed when the V / G ratio is above the threshold, while interstitial-rich ingots are formed when the V / G ratio is below the threshold.

Despite numerous theoretical studies by physicists, material scientists and many others, and many empirical studies by Czochralski Fuller manufacturers, the need to reduce defect density in single crystal silicon wafers continues.

The present invention is a choral to ensure that the temperature gradient in the ingot axis is greater than 2.5 ° K / mm and that a temperature gradient equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot can be obtained at the ingot-melt boundary. It is an object of the present invention to provide a method of improving the Czochralski puller and an improved Czochralski puller for producing a defect-free single crystal silicon ingot free from baconsea agglomerates and interstitial agglomerates by improving the elements of the ski puller. The temperature gradient in the ingot axis is greater than 2.5 ° K / mm, and by allowing a temperature gradient equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot to be obtained at the ingot-melt boundary, or Convex ingot-melt boundaries can be obtained for the silicon melt. This raised ingot can be cut to include point defects, but result in a large number of defect free wafers without vacancy agglomerates and interstitial agglomerates.

The Czochralski puller according to the present invention comprises a crucible in the seal holding the seal and the silicon melt. A crystal holder is disposed adjacent to the crucible in the seal. A heater is arranged to surround the crucible in the seal. A heat pack is arranged to surround the heater in the seal. A train group is disposed between the crucible and the crystal holder, and a cooling jacket is disposed between the train group and the crystal holder. A pulling means for pulling the crystal holder from the crucible is provided to thereby pull the single crystal silicon ingot from the silicon melt. The single crystal silicon ingot has an axis and a cylindrical edge. The silicon melt and the ingot are separated by an ingot-melt boundary between them.

An object of the present invention is an inner heat shield housing wall, an outer heat shield housing wall, an oblique heat shield housing floor, and the inner heat shield housing wall. And a ring-shaped heat shield housing comprising a heat shield housing roof extending between the outer and outer heat shield housing walls. . The thermal barrier housing includes an insulating material therein. A support member is arranged to support the thermal barrier housing in a crucible in the Czochralski puller. The inner heat shield housing wall and the outer heat shield housing walls may preferably be vertical inner heat shield walls and outer heat shield walls, and the heat shield housing cover may be preferably an inclined heat shield housing cover.

In one embodiment, the support member includes at least one support arm that extends to the ring thermal barrier housing. The at least one support arm may be hollow, and may include an insulating material therein. In another embodiment, the support member may be a ring-shaped support member. The ring-shaped support member may include an inner support member wall and an outer support member wall including an insulating material therebetween. The ring-shaped support member may also include at least one window therein. The ring support member may be inclined.

According to the present invention, at least one of the position of the train unit, the arrangement of the train unit, the position of the heater, the arrangement of the cooling jacket, the position of the crucible, the arrangement of the heating pack, and the power applied to the heater are ingots. The temperature gradient on the axis is greater than 2.5 ° K / mm and is selected such that a temperature gradient equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot can be obtained at the ingot-melt boundary. According to another aspect of the invention, at least the position of the train unit, the arrangement of the train unit, the position of the heater, the arrangement of the cooling jacket, the position of the crucible, the arrangement of the heating pack and the power applied to the heater One is chosen to obtain ingot-melt boundaries that are flat or convex to the silicon melt.

Each of the parameters described above can be changed individually. For example, the crucible includes a crucible top and a crucible bottom, and the train group also includes a heat cut top and a heat cut bottom. The location of the train group may preferably be selected by varying the distance between the thermal barrier floor and the top of the crucible.

The arrangement of the train group may be selected by providing a heat shield cover on the heat shield floor. Preferably, the heat shield cover has a heat shield housing cover extending between the inner heat shield housing wall, the outer heat shield housing wall, the inclined heat shield housing floor, and the inner heat shield housing wall and the outer heat shield housing wall in the crucible. It includes a ring-type thermal barrier housing. The thermal barrier housing preferably comprises an insulating material therein. The inclined thermal cut-off housing is defined at a constant angle from horizontal, and the arrangement of the train groups is preferably selected by this angle.

The inclined thermal barrier floor forms a first angle between the horizontal and the inclined thermal barrier housing cover, and the inclined thermal barrier housing forms a second angle between the horizontal and the horizontal. At least one of the length of the inner wall, the first angle and the second angle preferably has a temperature gradient at the ingot-melt boundary at the axis equal to a temperature gradient at the diffusion distance from the cylindrical edge. It is chosen to be determined to form more.

The heater also includes a heater top and a heater bottom, the location of the heater being preferably selected by varying the distance between the crucible top and the heater top. The position of the heater and the position of the crucible can also vary simultaneously simultaneously perpendicular to the seal.

The cooling jacket also includes a cooling jacket top and a cooling jacket bottom, the location of the cooling jacket preferably being selected by varying the distance between the top of the crucible and the bottom of the cooling jacket. The heating pack includes an upper heating pack housing and a lower heating pack housing, each of which is filled with a heat absorbing material. The arrangement of the heat packs is preferably selected by removing at least some of the heat absorbing material from the upper heat pack housing.

The upper heating pack housing is not at least partially filled with the heat absorbing material. Preferably all of the heat absorbing material is removed from the upper heat pack housing such that the upper heat pack housing is in a state where the heat absorbing material is removed.

The thermal barrier support member is preferably attached to the upper heating pack housing to support the ring thermal barrier housing in the crucible.

The above-mentioned parameters are preferably such that the temperature gradient at the ingot axis is greater than 2.5 ° K / mm and a temperature gradient equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot can be obtained at the ingot-melt boundary. Can change together. In particular, at least one of the position of the train piece, the arrangement of the train piece, and the position of the heater is equal to the temperature gradient at the diffusion distance from the edge of the cylinder at the ingot-melt boundary on the axis. Or more than one. Subsequently, at least one of the arrangement of the cooling jacket, the location of the crucible, and the arrangement of the heating pack is selected such that the temperature gradient at the ingot-melt boundary on the axis is greater than 2.5 ° K / mm.

In particular, the position of the train assembly, the arrangement of the train assembly and the position of the heater are all selected such that the temperature gradient at the ingot-melt boundary on the axis is greater than the temperature gradient at the cylindrical edge. Subsequently, the arrangement of the cooling jacket, the location of the crucible, the location of both the heater and the crucible, and the arrangement of the heating pack are all such that the temperature gradient on the axis is at least equal to the temperature gradient on the cylindrical edge. While maintained above, the temperature gradient at the ingot-melt boundary axis is chosen to be greater than 2.5 ° K / mm. Thereby a defect free silicon wafer can be formed in the improved Czochralski puller.

1 is a schematic diagram showing a Czochralski puller for growing a single crystal silicon ingot.

2 is a schematic diagram of the Voronkov theory.

3A-3E schematically illustrate the fabrication of a wafer having a vacancy-rich region at its center and a pure region between the vacancy-rich region and the wafer edge; admit.

4A-4E schematically illustrate the fabrication of a wafer free of agglomerates.

5 is a view showing the Czochralski puller and the improved method according to the present invention.

FIG. 6 is a diagram showing a comparison between a radial temperature gradient as a function of distance in a conventional method and a radial temperature gradient as a function of distance in accordance with the present invention.

7 is a diagrammatic representation of the observed tendency in the change of temperature gradient as a function of the distance between the thermal barrier bottom and the crucible top in accordance with the present invention.

8 is a diagram showing the observed tendency in the change of temperature gradient as a function of the distance between the top of the crucible and the top of the heater according to the invention.

9 is a diagram showing the observed tendency in the change of temperature gradient as a function of the distance between the crucible and the seal according to the invention.

FIG. 10 is a schematic representation of the observed trend in change in temperature gradient as a function of the distance between the top of the crucible and the bottom of the cooling jacket in accordance with the present invention.

11 is a diagram showing the observed tendency in the change of temperature gradient as a function of the amount of heat absorbing material removed from the upper heating pack housing according to the present invention.

12 is a flow chart showing the steps for change of variables in the combination according to the present invention.

FIG. 13 is an enlarged view of the train group of FIG.

14A to 14D are partial cutaway perspective views of embodiments of a train group according to the present invention.

※ Explanation of symbols for main parts of drawing

100: Czochralski Fuller 102: Heating Pack

104: heater 106: crucible

108: susceptor 110: rotation axis

112: first direction 114: train group

116: heat absorbing material 120: crystal lift axis

120a: crystal holder 122: second direction

124: seed crystal 126: melt

128: ingot 130: chamber sealing body

132: cooling jacket 134: boundary

200: Czochralski Fuller 202: heating pack housing

202a: Upper heating pack housing 202b: Lower heating pack housing

204: heater 206: crucible

208: susceptor 210: rotation axis

212 first direction 214 train group

216: heat absorbing material 220: crystal raising axis

220a: crystal holder 222: second direction

424 seed crystal 226 melt

228: ingot 230: chamber sealing body

232: cooling jacket 234: heat shield cover

236 air 238 boundary

1310: Internal thermal blocking housing wall 1320: External thermal blocking housing wall

1330: thermal insulation housing bottom 1340: thermal insulation housing cover

1350: support member 1360: insulating material

1410: support arm 1410 ': hollow support arm

1420: ring support member 1420 ': hollow ring support member

1430 window 1440 hollow ring support arm

1450: insulating material

Hereinafter, with reference to the accompanying drawings showing a preferred embodiment of the present invention will be described in detail. On the other hand, the present invention can be implemented in many different forms, not limited to the embodiments to be described below.

<Overview: Baconsea-rich and Defective Wafers>

Referring to Figures 3A-3E, (1) a vacancy-rich region formed at the center thereof, including vacancy agglomeration, and (2) located between the vacancy-rich region and the edge of the wafer, the vacancy agglomeration is performed. And an overview of the fabrication of semi-defective wafers having a pure region free of interstitial agglomerates. As shown in Figure 3A, the fabrication of such vacancy-rich wafers begins with the theory of Boronkov. Boron Cove's theory is shown schematically in FIG. 3A. As shown in the line starting from the edge E and ending at the center C, the ratio of the pulling rate to the temperature gradient on the surface of the ingot melt expressed in V / G, from the edge E denoted as point a. If greater than (V / G) ₁ at diffusion distance and less than (V / G) ₂ at center (C), between the vacancy-rich region and between the vacancy-rich region and the wafer edge It has been found in accordance with the present invention that semi-defective wafers having defect free areas can be produced. In particular, the V / G will change radially across the wafer in the ingot and will generally decrease as it goes from the center of the wafer to the edge due to other thermal properties at the center and edge of the wafer. Thus, a given wafer has a radial V / G range from its center C to its edge E, as shown in Figure 3A.

The greatest interest in the fabrication of silicon ingots and wafers lies in the formation of agglomerates of bacon or interstitial in the wafer. Agglomerates are known to be formed due to merging of point defects that are formed during the initial production of ingots from the melt. The point defect concentration is generally determined by the conditions at the boundary between the silicon ingot and the silicon melt. Then, as the ingot is further pulled up, diffusion and cooling determine the merging of point defects to form agglomerates.

As shown in Fig. 3B, according to the present invention, it is known that there is a critical baconic point defect concentration [V] ^* and a critical interstitial point defect concentration [I] ^* in which each point defect does not merge into agglomerates below it. According to the present invention, if the concentration of point defects is kept below this threshold concentration in the peripheral region of the wafer, a vacancy-rich region is formed in the center of the wafer, and a defect free region between the edge of the wafer and the vacancy-rich region. It is found that this is formed.

Thus, as shown in Fig. 3B, the vacancy concentration is maintained below the critical vacancy concentration [V] ^* across the wafer except near its center C. Thus, as shown in Fig. 3C, a vacancy-rich region [V] is formed at the center thereof, and the region of the wafer edge from the outside of the vacancy-rich region [V] is free of vacancy aggregation and becomes [P]. Displayed (pure or flawless).

Referring back to FIG. 3B for the interstitial, the interstitial concentration is from the center of the wafer to the diffusion distance L ₁ from the edge E of the wafer, corresponding to point a. It is kept below the concentration [I] ^* . Between the diffusion distance L ₁ and the edge E of the wafer, even if the interstitial concentration is initially above the critical concentration [I] ^* at the ingot-melt boundary, the interstitial baconism by diffusion It diffuses out of the ingot and does not form agglomerates during crystal growth. The diffusion distance L ₁ is usually 2.5 to 3 cm on 8 inch wafers. Thus, as shown in Fig. 3C, a semi-defective wafer having a vacancy-rich region [V] at the center and a defect-free region [P] between the vacancy-rich region and the edge is formed. Preferably, the defect free area [P] is at least 36% of the wafer area, more preferably at least 60% of the wafer area.

In order to form the wafer in FIG. 3C, V / G must be greater than (V / G) ₁ at point (a) and remain equal to or less than (V / G) ₂ at center (C). In order to maintain the ratio of V / G between these two thresholds, two thermal considerations must be taken into account. First, the radial temperature gradient G from the center C of the wafer to the diffusion distance a of the wafer must be maintained within these thresholds. Therefore, the V / G at the center should be close to (V / G) ₂ in order to suppress vacancy agglomeration into the vacancy-rich region. Moreover, the V / G at the diffusion distance L ₁ from the edge should be kept larger than (V / G) ₁ to prevent interstitial agglomeration. Thus, the hot zone of the furnace should be designed such that the change in G is maintained so that V / G is maintained between (V / G) ₂ and (V / G) ₁ from the center of the wafer to the diffusion distance of the wafer.

A second consideration is that G will change in the axial direction as the wafer is pulled out of the melt until it starts at the seed and ends at the tail. In particular, the increasing calories of the ingot, the decreasing calories of the melt and other thermal considerations will generally reduce the G when the ingot is pulled out of the melt. Thus, in order to maintain V / G between the first and second critical ratios, the pulling rate profile is adjusted as the ingot is pulled from the silicon melt in the hot zone furnace.

By controlling V / G as the ingot is pulled up, the baconish agglomerate can be limited to the bacony-rich region [V] proximate to the axis A of the ingot as shown in FIG. 3D. No interstitial agglomerates were formed, and the ingot region outside the vacancy-rich region [V] is represented by [P] indicating pure or flawless. In addition, as shown in FIG. 3D, this includes bacony agglomerates and is free of bacony-rich regions [V] and bacony agglomerates and interstitial agglomerates, which are located at the center thereof. A plurality of semi-defective wafers are produced with defect-free regions located in between. The diameter of the vacancy-rich region [V] is the same in each wafer. The identification of the plurality of wafers formed from a single ingot can be identified by the number of IDs, 'ID', shown in FIG. 3D, which is an alphanumeric code that is typically displayed on all wafers. These 18 symbols can distinguish all wafers coming from a single ingot.

3E shows the pulling rate profile used to maintain V / G between the two critical ratios when the ingot is pulled out of the melt. Since G generally decreases as the ingot is pulled out of the melt, the pulling speed V also generally decreases to keep V / G between the two critical ratios. In order to allow for the expected process variables, V / G is preferably kept in the middle between the first and second threshold ratios. Thus, a guard band is preferably maintained to allow for process variables.

4A-4E correspond to FIGS. 3A-3E and illustrate adjustment of the pulling rate profile for forming defect free silicon ingots and wafers according to the present invention. As shown in Fig. 4A, if V / G is maintained within the tight tolerance between the wafer center C and the diffusion distance a from the edge E of the wafer, the baconci like the interstitial agglomerates throughout the wafer. The formation of aggregates can be prevented. Thus, as shown in Fig. 4B, the ratio of V / G at the center C (axis A of the ingot) of the wafer is kept lower than the critical ratio (V / G) ₂ which forms the vacancy agglomerates. Similarly, V / G remains higher than the critical ratio (V / G) ₁ that forms interstitial agglomerates. Thus, the defect free silicon [P] of FIG. 4C is formed without interstitial agglomerates and vacancy agglomerates. A flawless ingot with a set of wafers is shown in Figure 4D. The pulling rate profile for the defect free silicon is shown in Figure 4E.

<Overview: Improved Czochralski Fuller and Train Group>

With reference to Fig. 5, an improved Czochralski puller according to the present invention will be described. As shown in FIG. 5, the improved Czochralski puller 200 includes a furnace, crystal raising mechanism, environmental controller and computerized control system. The Czochralski furnace is generally referred to as a hot zone furnace. The hot zone furnace includes a heater 204, a crucible 206 made of quartz, a susceptor 208 made of graphite, and a rotating shaft 210 that rotates in the first direction 212 as shown.

The cooling jacket or cooling port 232 is cooled by external cooling means such as water cooling. Train group 214 may provide additional heat distribution. The heat pack 202 includes heat absorbing material 216 therein and provides additional heat distribution.

The crystallisation mechanism includes a crystallisation shaft 220 that can rotate in a second direction 222 opposite to the first direction 212 as shown. The crystal raising shaft 220 includes a crystal holder 220a at an end thereof. The crystal holder 220a holds the seed crystal 224 and is pulled from the melt 226 in the crucible 206 to form the ingot 228.

The environmental control system includes a chamber seal 230, a cooling jacket 232 and other flow controllers and vacuum exhaust systems not shown. Computerized control systems can be used to control the heaters, pullers and other electrical and mechanical elements.

In order to grow a single crystal silicon ingot, the seed crystal 224 is in contact with the silicon melt 226, and gradually by a crystal lift shaft 220 or other conventional means for pulling the crystal holder out of the crucible. In the axial direction (upward). Cooling and solidification of the silicon melt 226 to single crystal silicon occurs at the boundary 238 between the ingot 228 and the melt 226.

According to the present invention, the position of the train unit 214, the arrangement of the train unit 214, the position of the heater 204, the arrangement of the cooling jacket 232, the position of the crucible 206, the heating The temperature gradient at the ingot axis, where at least one of the arrangement of the pack 202 and the power applied to the heater 204 is represented by point A, is greater than 2.5 ° K / mm and is also represented by point B A temperature gradient equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot is chosen so that it can be obtained at the ingot-melt boundary. In other words, these variables may be adjusted to obtain ingot-melt boundaries 238 that are flat or convex with respect to the silicon melt 226, as shown in FIG. 5.

First, a theoretical discussion of the importance of obtaining a temperature gradient at the ingot-melt boundary that is greater than 2.5 ° K / mm in the ingot axis and is equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot Describe first. Subsequently, consideration of each of the above variables that can be changed is described. Finally, changing the above variables together is described.

Theoretical Discussion

Summarizing the discussion of the manufacture of defect-free silicon, and referring again to FIG. 4B, in order to obtain the defect-free silicon, corresponding to the distance L ₁ from point C and point E of FIG. A radius (r) and axis (z) temperature gradient at the ingot-melt boundary is maintained between [V] ^* and [I] ^* from the axis of the ingot to the diffusion distance from the cylindrical edge of the ingot. Should be. Therefore, Equations 1 and 2 below hold.

(V / G) 1 2

(V / G) 1 2

If the deviation of V / G between the axis and the diffusion distance from the cylindrical edge is defined by Equation 3 below, the following result is obtained by Equation 4.

ΔV / G = (V / G) 2-(V / G) 1

ΔG 'is defined by the following equation.

ΔG '= G1-G2

In order to minimize ΔV / G in Equation 4, Equations 6 and 7 below must be maintained.

ΔG '≤ 0

G2 ≥ 2.5

When the above equations 5 and 6 are combined, the following equation 8 is obtained.

G2 ≥ G1

In other words, Equation 8 means that the temperature gradient at the axis at the ingot-melt boundary must be at least equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge at the ingot-melt boundary. In other words, Equation 7 means that the temperature gradient at the ingot-melt boundary must be greater than the temperature gradient 2.5 ° K / mm at that axis (center).

Equation 7 was obtained based on experimental observation because the lower limit of the pulling speed V was approximately 0.4 mm / min. At the pulling speed below this speed, the ingot may fall away from the crystal holder. Moreover, the substantial lower limit of (V / G) ₂ is 0.16 mm / ° K. Therefore, the temperature gradient on the axis should be greater than 2.5 ° K / mm.

According to the invention, the temperature gradient at the ingot-melt boundary is approximately greater than about 2.5 ° K / mm at the axis (corresponding to point A in FIG. 5), and also the diffusion distance from the cylindrical edge. If equal to or greater than the temperature gradient at (corresponding to point B in FIG. 5), the ingot-melt boundary 238 of FIG. 5 may be flat as shown in FIG. 5 or with respect to the silicon melt 226. Can be convex.

Qualitatively, it has been found that defect free silicon can be obtained by increased heating beyond compensating edge cooling effects at the ingot edge compared to the center of the ingot. Moreover, a certain minimum temperature gradient at the center must also be maintained. If all of these thresholds are met, defect free silicon can be obtained.

According to the present invention, more heat must flow from the melt 226 to the air 236 as compared to the heat flowing from the melt 226 to the ingot 228 in the crucible 206 from the development of heat flow. It turned out. In other words, more heat must flow across the liquid / air boundary as compared to heat across the liquid / solid boundary. In order to achieve this desirable flow additional heat from the heater 204 must reach the edge of the ingot 228 via air 236.

FIG. 6 shows the radial gradient G as a function of the distance D from the center (axis) C of the ingot to the edge E. FIG. The temperature gradient at the ingot-melt boundary at the center C at the ingot-melt boundary according to the invention, represented by the solid line, is the temperature at the diffusion distance L ₁ from the cylindrical edge E. Is equal to or greater than the gradient. This is in contrast to a typical temperature gradient, indicated by the dashed line in FIG. 6, which is generally much greater at the diffusion distance from the edge E than at the center C of the ingot.

<Variable adjustment>

As described above, according to the present invention, the position of the train unit 214, the arrangement of the train unit 214, the position of the heater 204, the position of the cooling jacket 232, the crucible ( At least one of the location of the 206, the arrangement of the heating pack 202 and the power applied to the heater 204 has a temperature gradient greater than 2.5 ° K / mm at the ingot axis and at a diffusion distance from the cylindrical edge of the ingot. A temperature gradient equal to or greater than is chosen so that it can be obtained at the ingot-melt boundary. In the following description, the temperature gradient in the ingot axis, which has been expressed as G ₂ so far, is referred to as G _center . The selection of each of these variables is described below. It will be appreciated by those skilled in the art that the actual values of each variable may vary depending on the model and manufacturer of the Czochralski Fuller being improved. Moreover, for a given Czochralski Fuller, multiple sets of variables may yield the above results.

The selection of the position of the train group 214 is described below. As shown in FIG. 5, the crucible 206 includes a crucible top and a crucible bottom, and the train group 214 includes a heat cut top and a heat cut bottom. The location of the train group is selected by varying the distance between the thermal barrier floor and the top of the crucible. This distance is indicated by a in FIG. Figure 7 graphically shows the observed trends in changes in ΔG 'and G _centers as a function of distance a. As shown, there may be a non-linear relationship in these two quantities.

The improvement in arrangement of the train group 214 is described below. As shown in Fig. 5, the ordinary train body is improved by the addition of a heat shield cover 234 at the heat shield floor. The heat shield 234 is preferably filled with a heat preservation material such as carbon ferrite. The physical dimensions of the thermal barrier 234 can also be modified as detailed below.

The change of the position of the heater 204 is described below. As shown in Figure 5, the heater 204 includes a heater top and a heater bottom. The position of the heater is changed by varying the distance between the top of the crucible and the top of the heater. This distance is shown by b in FIG. The observed trends in changes in G _center and ΔG ′ as a function of distance a are shown in FIG. 8.

According to the present invention, the position of the heater 204 and the positions of the crucible 206 may also be changed perpendicularly to the seal 230 at the same time. In particular, the distance d between the crucible 206 and the seal 230 may be changed after the change of the distance b between the top of the crucible and the top of the heater. Fig. 9 diagrammatically shows the observed tendency in the change of ΔG 'and G _center as a function of the distance d while the distance b is kept constant.

The change of the cooling jacket position is described below. As shown in Figure 5, the cooling jacket 232 includes a cooling jacket top and a cooling jacket bottom. According to the invention, the position of the cooling jacket is varied by varying the distance between the top of the crucible and the bottom of the cooling jacket. This distance is shown by c in FIG. Figure 10 graphically shows the observed trends in change of G _center and ΔG 'as a function of distance c.

According to the invention, a modification of the heat pack material 216 is also provided. In particular, as shown in FIG. 5, the heat pack housing 202 includes an upper heat pack housing 202a and a lower heat pack housing 202b. Heat absorbing material 216, generally carbon ferrite, may be removed from the top heating pack housing 202a. In one specific embodiment, heat absorbing material is removed from the entire upper heat pack housing 202a. FIG. 11 shows graphically the observed trends in changes in the amount of heat absorbing material 216 removed from ΔG ′, G _center, and the upper heat pack housing 202a.

<Change in combination of variables>

As noted above, each of the Czochralski Fuller's variables individually varies nonlinearly G _center and ΔG ′. Thus, trial and error and / or simulation can be used to change all of these variables to obtain ΔG ′ ≦ 0 and G _center ≧ 2.5.

According to the invention, the following steps can be carried out to improve the Czochralski puller. 12, at block 1200, at least one of the train piece location a, the piece design and the heater location b is such that the temperature gradient at the axis at the ingot-melt boundary is And selected to be equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge. In particular, the position (a) of the train assembly 214, the arrangement of the train assembly 214 and the position (b) of the heater are all selected to minimize ΔG '. Unfortunately, during this process, the temperature gradient (G _center ) on the axis can also be reduced.

Subsequently, at block 1210, at least one of position c of the cooling jacket 232, amount of heat absorbing material 216 in the heat pack 202, and position d of the crucible 206. Is improved such that the temperature gradient at the ingot-melt boundary on the axis is formed larger than 2.5 ° K / mm. In particular, the distance c of the cooling jacket, the amount of heat absorbing material and the distance d of the crucible are all selected to maximize the _center of G.

Unfortunately, maximizing the G _center in block 1210 can cause ΔG ′ to increase. Thus, at block 1220, a test is performed to see whether ΔG 'is less than or equal to zero. If so, the Czochralski puller is optimized. If not, then continue to reduce the heater power at block 1230 and the processes of block 1200 and block 1210 are performed again until ΔG ′ is less than approximately zero.

<Detailed Design of Train Groups>

The design of the train assembly 214 of FIG. 5 can have a profound effect on the performance of the Czochralski puller. Therefore, the detailed design of the train group 214 will be described below.

FIG. 13 is an enlarged view of the train group 214 and elements surrounding the train group 214 of FIG. As shown in FIG. 13, the train unit 214 preferably includes a ring-shaped heat shield or heat shield housing 234 within the crucible 206. As shown in FIG. The ring-type thermal barrier housing 234 may include carbon-coated silicon carbide, and preferably, an internal heat shield housing wall 1310, an external heat shield housing wall 1320, and an inclined thermal barrier housing bottom 1330. And also preferably may include an inclined heat shield housing cover (1340). The thermal barrier housing includes an insulating material 1360 such as carbon ferrite therein. A support member 1350 supports the ring thermal barrier housing 234 in the crucible 206. The support member 1350 may also include carbon-coated silicon carbide.

As shown in FIG. 13, the inner heat shielding wall 1310 and the outer heat shielding wall 1320 may be preferably vertical inner heat shielding walls and outer heat shielding walls, respectively. The heat shield housing bottom 1330 and the heat shield housing cover 1340 are preferably inclined at an angle α and an angle β with respect to the horizontal, respectively.

According to the present invention, most of the physical dimensions of the ring thermal barrier housing 234 can be varied to change the temperature gradient at the center of the ingot 228 relative to the edge of the ingot 228. Among the variables that can be changed, the angle α of the thermal barrier housing 1330, the angle β of the thermal barrier housing 1340, the length a of the internal thermal barrier wall 1310, and The distance b between the internal heat blocking wall 1310 and the external heat blocking wall 1320, the length c of the external heat blocking wall 1320, and the distance d between the crucible 206 and the external heat blocking wall 1320. And distances e between the top of the crucible and the inclined thermal barrier housing 1330.

In general, the ring thermal barrier housing 234 includes an insulating material 1360 therein. The insulating material 1360 insulates heat from the heater 204 with respect to the ingot 228. The insulating material 1360 also preserves heat radiated from the ingot 228.

In particular, when the angle α is increased and other variables are the same, the temperature at the point x at which the ring-shaped thermal barrier housing internal heat shield housing wall 1310 and the thermal barrier housing floor 1330 intersect may increase. Can be. The temperature of the point y close to the ingot 228 may also be increased by increased heat radiation from the ingot 228. Furthermore, if length a increases compared to length c, more heat retention from the ingot may occur, resulting in an increase in temperature at point x and an increase in temperature at point b. The temperature gradient at the center of the ingot 228 may be reduced. In contrast, when the angle β increases, the temperature gradient at the center of the ingot may increase.

The location of the thermal barrier housing 234 relative to the crucible 206, indicated by d in FIG. 13, may also affect the performance of the Czochralski puller. In particular, as d decreases, more heat preservation may occur due to heat radiation from the ingot, thereby increasing the temperature at points x and y. Moreover, the difference in temperature gradient between the center and the edge of the ingot 228 can be reduced, and the temperature at the center of the ingot can also be reduced. Finally, the axial distance between the thermal barrier housing 234 and the crucible 206, indicated by e in FIG. 13, can also be varied. In particular, as the thermal barrier housing 234 moves upward with respect to the crucible 206, the distance e is thereby decreased, and the temperature gradient at the center of the ingot can be increased. The difference between the temperature gradient between the center of the ingot and the edge of the ingot can also increase.

Preferably, all of these variables have a temperature gradient equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot (indicated by point B in FIG. 5) at the ingot-melt boundary in the axis ( 5 may be changed to form at point A).

Thus, all of these variables are such that the temperature gradient in the ingot axis is greater than 2.5 ° K / mm and that a temperature gradient equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot can be obtained at the ingot-melt boundary. Can be changed.

14A-14D show various arrangements of the support member 1350 that may also affect the thermal characteristics of the Czochralski puller. 14A to 14D are partial cutaway perspective views of the train body 214. As shown in FIG. 14A, the support member 1350 may include one or more support arms 1410. Alternatively, as shown in FIG. 14B, the support member 1350 may be a ring support member 1420. The ring support member 1420 may include one or more windows 1430 therein. The windows 1430 may be openings, or may be quartz windows. The ring-shaped support member may be inclined as shown.

As shown in Figure 14C, the support arms 1410 may be hollow support arms 1410 'that include an insulating material 1440 therein. Similarly, as shown in FIG. 14D, the ring support member 1420 may be a hollow ring support member 1420 ′ that includes an insulating material 1450 therein. It will also be appreciated that the support member need not be attached to its ring-shaped thermal barrier housing 234 at its outer wall as shown. Moreover, the attachment position can be changed between its outer walls and inner walls.

The addition of insulating material within the support members 1410 and 1420 to manufacture hollow support members 1410 'and 1420', respectively, will insulate the heater 204 from the ingot 228. Can also provide fast heat transfer from the ingot surface. Thus, the temperature gradients at the center of the ingot may increase, and the difference in temperature gradients between the center of the ingot and the edge of the ingot may also decrease.

The Czochralski puller has been modified so that a temperature gradient in the ingot axis is greater than 2.5 ° K / mm and a temperature gradient equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot can be obtained at the ingot-melt boundary. It has been found that the adjustment of α, a and c can control the formation of a temperature gradient at the ingot-melt boundary that is larger than the temperature gradient at the diffusion distance from the cylindrical edge. Moreover, the adjustment of β and the provision of an insulating material in the support arm can control the temperature gradient on the axis. Therefore, in the design of the train group 214, α, a and c can be increased to reduce ΔG '. Then, β can be increased and more insulating material can be added to obtain a sufficiently high G _center . One specific design of the ring thermal barrier housing includes an external heat shield housing wall 1320 having a length (c) of 125 mm, an internal heat shield housing wall 1310 of a length (a) of 55 mm, a distance d of 7.4 mm, and An angle α of 5 °.

Thus, according to the present invention, it is possible to produce a plurality of defect-free single crystal silicon wafers made from one silicon ingot, and each of the defect-free silicon wafers is free of vacancy and interstitial agglomerates.

Thus, by maintaining the ratio of the pulling rate to temperature gradient at the ingot-melt boundary between the upper and lower boundaries, agglomerate defects can be suppressed into the vacancy-rich region at the center of the wafer, or removed to produce a defect free silicon wafer. It has the effect of being able to.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (66)

An inner heat shield housing wall, an outer heat shield housing wall, an inclined heat shield housing bottom, and a heat shield housing cover extending between the inner heat shield housing wall and the outer heat shield housing wall, and having a ring-type containing an insulating material therein. Thermal housing; And A support member arranged to support the thermal barrier housing in a crucible; Czochralski puller train group for growing a single crystal silicon ingot, including a crucible holding a silicon melt characterized in that it comprises a. The method of claim 1, The inner heat shield housing wall and the outer heat shield housing wall are vertical inner heat shield housing walls and outer heat shield housing walls; And a crucible for holding the silicon melt, wherein the heat shield housing cover is an inclined heat shield housing cover. The method of claim 1, And a crucible for holding the silicon melt, wherein the support member includes at least one support arm extending to the ring-shaped thermal barrier housing. The method of claim 3, wherein And a crucible holding the silicon melt, wherein the at least one support arm is at least one hollow support arm having an insulating material therein. The method of claim 1, And a crucible for holding the silicon melt, wherein the support member comprises a ring-shaped support member. The method of claim 5, And a crucible for holding the silicon melt, wherein the ring-shaped support member includes an inner support member wall and an outer support member wall including an insulating material therebetween. The method of claim 5, And a crucible for holding the silicon melt, wherein the ring-shaped support member includes at least one window therein. The method of claim 5, And a crucible for holding the silicon melt, wherein the ring-shaped support member is an inclined ring-shaped support member. The method of claim 1, Means for pulling a crystal holder out of the crucible and thereby pulling a single crystal silicon ingot from the silicon melt, the single crystal silicon ingot having an axial and cylindrical edge, wherein the silicon melt and the ingot are ingot-melt boundaries. Separated by; The heat shield housing cover is an inclined heat shield housing cover, the inner heat shield housing wall has an inner wall length, the inclined heat shield housing bottom is horizontal and the first angle, the inclined heat shield housing cover is horizontal And at least one of the inner wall length, the first angle and the second angle, the temperature gradient at the ingot-melt boundary at the axis is equal to the temperature gradient at the diffusion distance from the cylindrical edge. And a crucible for holding the silicon melt, wherein the single crystal silicon ingot is grown. Seal; A crucible in the seal holding a silicon melt; A crystal holder in the seal adjoining the crucible; A heater in the seal surrounding the crucible; An inner heat shield housing wall, an outer heat shield housing wall, an inclined heat shield housing bottom, and a heat shield housing cover extending between the inner heat shield housing wall and the outer heat shield housing wall, wherein the insulating material includes an insulating material therein; Ring thermal housings in crucibles; And A support member for supporting the heat shield housing in the crucible; Czochralski puller for growing a single crystal silicon ingot, characterized in that provided with. The method of claim 10, The inner heat shield housing wall and the outer heat shield housing wall are vertical inner heat shield housing walls and outer heat shield housing walls; The Czochralski puller for growing the single crystal silicon ingot, characterized in that the heat shield housing cover is inclined heat shield housing cover. The method of claim 10, Further comprising a heating pack surrounding the heater, Czochralski puller for growing the single crystal silicon ingot, characterized in that the support member supports the ring-type thermal barrier housing from the heating pack in the crucible. The method of claim 10, Czochralski puller for growing the single crystal silicon ingot, characterized in that the support member includes at least one support arm extending to the ring-shaped thermal barrier housing. The method of claim 13, Czochralski puller for growing said single crystal silicon ingot, wherein said at least one support arm is at least one hollow support arm comprising an insulating material therein. The method of claim 10, Czochralski puller for growing the single crystal silicon ingot, characterized in that the support member comprises a ring-shaped support member. The method of claim 15, Czochralski puller for growing said single crystal silicon ingot, wherein said ring-shaped support member includes an inner support member wall and an outer support member wall including an insulating material therebetween. The method of claim 15, Czochralski puller for growing said single crystal silicon ingot, characterized in that said ring-shaped support member includes at least one window therein. The method of claim 15, Czochralski puller for growing the single crystal silicon ingot, characterized in that the ring-shaped support member is an inclined ring-shaped support member. The method of claim 12, The heating pack includes an upper heating pack housing and a lower heating pack housing, wherein the lower heating pack housing is filled with a heat absorbing material, and the upper heating pack housing is at least partially not filled with the heat absorbing material. Czochralski puller for growing the single crystal silicon ingot. The method of claim 19, Czochralski puller for growing the single crystal silicon ingot, characterized in that the upper heat pack housing is removed the heat absorbing material. The method of claim 10, Means for pulling a crystal holder out of the crucible and thereby pulling a single crystal silicon ingot from the silicon melt, the single crystal silicon ingot having an axial and cylindrical edge, wherein the silicon melt and the ingot are ingot-melt boundaries. Separated by; The heat shield housing cover is an inclined heat shield housing cover, the inner heat shield housing wall has an inner wall length, the inclined heat shield housing bottom is horizontal and the first angle, the inclined heat shield housing cover is horizontal And at least one of the inner wall length, the first angle and the second angle, the temperature gradient at the ingot-melt boundary at the axis is equal to the temperature gradient at the diffusion distance from the cylindrical edge. Czochralski puller for growing said single crystal silicon ingot, characterized in that it is selected to be formed or more. Seal; A crucible in the seal holding a silicon melt; A crystal holder in the seal adjoining the crucible; A heater in the seal surrounding the crucible; A train group between the crucible and the crystal holder; A cooling jacket between the train unit and the crystal holder; And And a heating pack in the seal surrounding the heater. The heating pack includes an upper heating pack housing and a lower heating pack housing, wherein the lower heating pack housing is filled with a heat absorbing material, and the upper heating pack housing is at least partially not filled with the heat absorbing material. Czochralski puller for growing single crystal silicon ingot. The method of claim 22, Czochralski puller for growing the single crystal silicon ingot, characterized in that the train body extends from the upper heating pack housing to between the crucible and the crystal holder. Seal; A crucible in the seal holding a silicon melt; A crystal holder in the seal adjoining the crucible; A heater in the seal surrounding the crucible; A heating pack in the seal surrounding the heater; A train group between the crucible and the crystal holder; A cooling jacket between the train unit and the crystal holder; And Means for pulling a crystal holder out of the crucible and thereby pulling a single crystal silicon ingot from the silicon melt; More, The single crystal silicon ingot has an axis and a cylindrical edge, the silicon melt and the ingot are separated by an ingot-melt boundary, At least one of the position of the train group, the arrangement of the train group, the position of the heater, the arrangement of the cooling jacket, the position of the crucible, the arrangement of the heating pack, and the power applied to the heater is a temperature gradient in the ingot shaft. Cholar for growing single crystal silicon ingots larger than 2.5 ° K / mm and selected to obtain a temperature gradient at the ingot-melt boundary that is equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot. Ski puller. The method of claim 24, The crucible comprises a crucible top and crucible bottom, the train group comprises a heat shield top and a heat shield bottom, and the location of the train group is selected by varying the distance between the heat shield floor and the top of the crucible Czochralski puller for growing said single crystal silicon ingot. The method of claim 24, The train group includes a heat shield top and a heat shield bottom, and the arrangement of the train groups is selected by providing a heat shield cover on the heat shield floor, Czochralski for growing the single crystal silicon ingot. Puller. The method of claim 26, The heat shield cover includes a ring-shaped housing including an inner heat shield housing wall, an outer heat shield housing wall, an inclined heat shield housing bottom, and a heat shield housing cover extending between the inner heat shield housing wall and the outer heat shield housing wall in the crucible. And a thermal barrier housing, wherein the thermal barrier housing includes an insulating material therein, wherein the Czochralski puller for growing the single crystal silicon ingot. The method of claim 27, And the inclined thermal barrier housing is limited to a constant angle from horizontal, and the arrangement of the train body is selected by the change of the angle, the Czochralski puller for growing the single crystal silicon ingot. The method of claim 24, Wherein the crucible comprises a crucible top and a crucible bottom, the heater comprises a heater top and a heater bottom, and the location of the heater is selected by a change in distance between the crucible top and the top of the heater. Czochralski puller for growing silicon ingots. The method of claim 29, The Czochralski puller for growing the single crystal silicon ingot, wherein the position of the heater and the position of the crucible change vertically together with respect to the seal. The method of claim 24, The crucible comprises a crucible top and crucible bottom, the cooling jacket comprises a cooling jacket top and a cooling jacket bottom, and the location of the cooling jacket is selected by varying the distance between the crucible top and the cooling jacket bottom. Czochralski puller for growing said single crystal silicon ingot. The method of claim 24, Wherein the heat pack comprises an upper heat pack housing and a lower heat pack housing, each of which is filled with a heat absorbing material, and wherein the arrangement of the heat packs removes at least a portion of the heat absorbing material from the upper heat pack housing. Czochralski puller for growing said single crystal silicon ingot, characterized in that selected by. The method of claim 24, At least one of the position of the train assembly, the arrangement of the train assembly, and the position of the heater is such that the temperature gradient at the ingot-melt boundary on the axis is equal to or equal to the temperature gradient at the diffusion distance from the edge of the cylinder. And at least one of the arrangement of the cooling jacket, the location of the crucible, and the arrangement of the heating pack, wherein the temperature gradient at the ingot-melt boundary on the axis is greater than 2.5 ° K / mm. And a Czochralski puller for growing said single crystal silicon ingot. The method of claim 33, wherein The crucible comprises a crucible top and crucible bottom, the train group comprises a heat shield top and a heat shield bottom, the heater comprises a heater top and a heater bottom, and the location of the train group Selected by the change in distance between the top of the crucible, the arrangement of the train group is selected by providing a heat shield cover at the bottom of the heat shield, and the position of the heater is the distance between the top of the crucible and the top of the heater And the position of the train element, the arrangement of the train element and the position of the heater are such that the temperature gradient at the ingot-melt boundary on the axis is at the diffusion distance from the edge of the cylinder. Equal to or greater than the temperature gradient Czochralski puller for being selected such that the growth of the single crystal silicon ingot according to claim. The method of claim 34, wherein The crucible comprises a crucible top and crucible bottom, the heater comprises a heater top and a heater bottom, the cooling jacket comprises a cooling jacket top and a cooling jacket bottom, and the heating pack is respectively filled with heat absorbing material. A heating pack housing and a lower heating pack housing, wherein the position of the heater is selected by varying the distance between the top of the crucible and the top of the heater, the position of the heater and the position of the crucible perpendicular to the seal. And the position of the cooling jacket is selected by varying the distance between the top of the crucible and the bottom of the cooling jacket, and the arrangement of the heating pack removes at least a portion of the heat absorbing material from the upper heating pack housing. Is chosen by The arrangement of the cooling jacket, the location of the crucible, the location of both the heater and the crucible, and the arrangement of the heat pack are such that the temperature gradient at the ingot-melt boundary on the axis is greater than 2.5 ° K / mm. Czochralski puller for growing said single crystal silicon ingot. Seal; A crucible in the seal holding a silicon melt; A crystal holder in the seal adjoining the crucible; A heater in the seal surrounding the crucible; A heating pack in the seal surrounding the heater; A train group between the crucible and the crystal holder; A cooling jacket between the train unit and the crystal holder; And Means for pulling a crystal holder out of the crucible and thereby pulling a single crystal silicon ingot from the silicon melt; More, The single crystal silicon ingot has an axis and a cylindrical edge, the silicon melt and the ingot are separated by an ingot-melt boundary, At least one of the position of the train unit, the arrangement of the train unit, the position of the heater, the arrangement of the cooling jacket, the position of the crucible, the arrangement of the heating pack, and the power applied to the heater are flat or in a silicon melt. Czochralski puller for growing a single crystal silicon ingot, characterized in that it is selected to obtain a convex ingot-melt boundary. The method of claim 36, The crucible comprises a crucible top and crucible bottom, the train group comprises a heat shield top and a heat shield bottom, and the location of the train group is selected by varying the distance between the heat shield floor and the top of the crucible Czochralski puller for growing said single crystal silicon ingot. The method of claim 36, Wherein the train group comprises a thermal barrier top and a thermal barrier bottom, wherein the arrangement of the thermal train assemblies is selected by providing a thermal barrier cover on the thermal barrier floor, Czochralski for growing the single crystal silicon ingot. Puller. The method of claim 38, The heat shield cover includes a ring-shaped housing including an inner heat shield housing wall, an outer heat shield housing wall, an inclined heat shield housing bottom, and a heat shield housing cover extending between the inner heat shield housing wall and the outer heat shield housing wall in the crucible. And a thermal barrier housing, wherein the thermal barrier housing includes an insulating material therein, wherein the Czochralski puller for growing the single crystal silicon ingot. The method of claim 39, And the inclined thermal barrier housing is limited to a constant angle from horizontal, and the arrangement of the train body is selected by the change of the angle, the Czochralski puller for growing the single crystal silicon ingot. The method of claim 36, Wherein the crucible comprises a crucible top and a crucible bottom, the heater comprises a heater top and a heater bottom, and the position of the heater is selected by a change in distance between the crucible top and the heater top. Czochralski puller for growing silicon ingots. 42. The method of claim 41 wherein The Czochralski puller for growing the single crystal silicon ingot, wherein the position of the heater and the position of the crucible change vertically together with respect to the seal. The method of claim 36, The crucible comprises a crucible top and crucible bottom, the cooling jacket comprises a cooling jacket top and a cooling jacket bottom, and the location of the cooling jacket is selected by varying the distance between the crucible top and the cooling jacket bottom. Czochralski puller for growing said single crystal silicon ingot. The method of claim 36, Wherein the heat pack comprises an upper heat pack housing and a lower heat pack housing, each of which is filled with a heat absorbing material, and wherein the arrangement of the heat packs removes at least a portion of the heat absorbing material from the upper heat pack housing. Czochralski puller for growing said single crystal silicon ingot, characterized in that selected by. A seal, a crucible in the seal holding a silicon melt, a crystal holder in the seal adjacent to the crucible, a heater in the seal surrounding the crucible, a heat pack in the seal surrounding the heater, The choke further comprises a train body between the crucible and the crystal holder, a cooling jacket between the train body and the crystal holder, and means for pulling a crystal holder out of the crucible and thereby pulling a single crystal silicon ingot from the silicon melt. In improving the Ralski fuller to a Czochralski fuller for growing defect-free single crystal silicon ingots, At least one of the position of the train unit, the arrangement of the train unit, the position of the heater, the arrangement of the cooling jacket, the position of the crucible, the arrangement of the heating pack, and the power applied to the heater is a temperature gradient on the ingot shaft. A selection step for selecting a temperature gradient greater than 2.5 ° K / mm and equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge of the ingot such that the temperature gradient is obtained at the ingot-melt boundary. Improvement of Czochralski puller for growing defect-free single crystal silicon ingot without agglomerates and interstitial agglomerates. The method of claim 45, The crucible comprises a crucible top and a crucible bottom, the train group comprises a heat shield top and a heat shield bottom, and the selecting step changes the distance between the heat shield bottom and the top of the crucible, thereby A method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of bacon and interstitial agglomerates, the method comprising: selecting a position of a single body. The method of claim 45, Wherein the train group comprises a heat shield top and a heat shield bottom, wherein the selecting step includes providing a heat shield cover to the heat shield floor, thereby allowing the arrangement of the train groups to be selected. And a method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of baconic and interstitial agglomerates. The method of claim 47, The heat shield cover includes a ring-shaped housing including an inner heat shield housing wall, an outer heat shield housing wall, an inclined heat shield housing bottom, and a heat shield housing cover extending between the inner heat shield housing wall and the outer heat shield housing wall in the crucible. A thermal barrier housing, wherein the thermal barrier housing includes an insulating material therein, the inclined thermal barrier housing bottom being defined from a horizontal to a constant angle, and the selecting step changes the angle, thereby A method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of bacon and agglomerate agglomerates, comprising selecting an arrangement of train groups. The method of claim 45, The crucible comprises a crucible top and crucible bottom, the heater comprises a heater top and a heater bottom, and the selecting step changes the distance between the crucible top and the heater top, thereby selecting the position of the heater. And a method for improving a Czochralski puller for growing a defect-free single crystal silicon ingot free from the baconite agglomerates and interstitial agglomerates. The method of claim 49, The selection step further comprises the step of changing the position of the heater and the position of the crucible vertically with respect to the sealing body, the defect-free single crystal silicon ingot without the bake agglomeration and interstitial agglomeration How to improve Czochralski Fuller to grow. The method of claim 45, The crucible comprises a crucible top and a crucible bottom, the cooling jacket comprises a cooling jacket top and a cooling jacket bottom, and the selecting step changes the distance between the crucible top and the cooling jacket bottom, thereby A method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of vacancy agglomerates and interstitial agglomerates, comprising selecting a location of a cooling jacket. The method of claim 45, Wherein the heating pack comprises an upper heating pack housing and a lower heating pack housing each filled with a heat absorbing material, and wherein the selecting step removes at least a portion of the heat absorbing material from the upper heating pack housing. And a method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of the baconic agglomerates and the interstitial agglomerates. The method of claim 45, The selection step At least one of the position of the train assembly, the arrangement of the train assembly, and the position of the heater is such that the temperature gradient at the ingot-melt boundary on the axis is equal to or equal to the temperature gradient at the diffusion distance from the edge of the cylinder. A first selection step selected to be formed above; And A second selection step wherein at least one of the arrangement of the cooling jacket, the location of the crucible and the arrangement of the heating pack is selected such that a temperature gradient at the ingot-melt boundary on the axis is greater than 2.5 ° K / mm; The method of improving the Czochralski puller for growing the defect-free single-crystal silicon ingot without the bacon and agglomerate agglomerates. The method of claim 53 wherein The crucible comprises a crucible top and crucible bottom, the train group comprises a heat shield top and a heat shield bottom, the heater comprises a heater top and a heater bottom, and the location of the train group Selected by the change in distance between the top of the crucible, the arrangement of the train group is selected by providing a heat shield cover at the bottom of the heat shield, and the position of the heater is the distance between the top of the crucible and the top of the heater And wherein the first selection step is such that the temperature gradient at the ingot-melt boundary on the axis is equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge. Location of the train group, And an arrangement and selecting a position of the heater. 17. A method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of vacancy agglomerates and interstitial agglomerates. The method of claim 54, wherein The crucible comprises a crucible top and crucible bottom, the heater comprises a heater top and a heater bottom, the cooling jacket comprises a cooling jacket top and a cooling jacket bottom, and the heating pack is respectively filled with heat absorbing material. A heating pack housing and a lower heating pack housing, wherein the position of the heater is selected by varying the distance between the top of the crucible and the top of the heater, the position of the heater and the position of the crucible perpendicular to the seal. And the position of the cooling jacket is selected by varying the distance between the top of the crucible and the bottom of the cooling jacket, and the arrangement of the heating pack removes at least a portion of the heat absorbing material from the upper heating pack housing. Is chosen by The second selection step may further include the arrangement of the cooling jacket, the location of the crucible, the location of both the heater and the crucible such that the temperature gradient at the ingot-melt boundary on the axis is greater than 2.5 ° K / mm and And selecting an arrangement of the heating packs. 12. A method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of bacon and interstitial agglomerates. A seal, a crucible in the seal holding a silicon melt, a crystal holder in the seal adjacent to the crucible, a heater in the seal surrounding the crucible, a heat pack in the seal surrounding the heater, The choke further comprises a train body between the crucible and the crystal holder, a cooling jacket between the train body and the crystal holder, and means for pulling a crystal holder out of the crucible and thereby pulling a single crystal silicon ingot from the silicon melt. In improving the Ralski fuller to a Czochralski fuller for growing defect-free single crystal silicon ingots, At least one of the position of the train unit, the arrangement of the train unit, the position of the heater, the arrangement of the cooling jacket, the position of the crucible, the arrangement of the heating pack, and the power applied to the heater are flat or in a silicon melt. And an optional step of selecting to obtain a convex ingot-melt boundary for the development of a Czochralski puller for the growth of defect-free single crystal silicon ingots free of vacancy and interstitial agglomerates. The method of claim 56, wherein The crucible comprises a crucible top and a crucible bottom, the train group comprises a heat shield top and a heat shield bottom, and the selecting step changes the distance between the heat shield bottom and the top of the crucible, thereby A method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of bacon and interstitial agglomerates, the method comprising: selecting a position of a single body. The method of claim 56, wherein Wherein the train group comprises a heat shield top and a heat shield bottom, wherein the selecting step includes providing a heat shield cover to the heat shield floor, thereby allowing the arrangement of the train groups to be selected. And a method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of baconic and interstitial agglomerates. The method of claim 58, The heat shield cover includes a ring-shaped housing including an inner heat shield housing wall, an outer heat shield housing wall, an inclined heat shield housing bottom, and a heat shield housing cover extending between the inner heat shield housing wall and the outer heat shield housing wall in the crucible. A thermal barrier housing, wherein the thermal barrier housing includes an insulating material therein, the inclined thermal barrier housing bottom being defined from a horizontal to a constant angle, and the selecting step changes the angle, thereby A method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of bacon and agglomerate agglomerates, comprising selecting an arrangement of train groups. The method of claim 56, wherein The crucible comprises a crucible top and crucible bottom, the heater comprises a heater top and a heater bottom, and the selecting step changes the distance between the crucible top and the heater top, thereby selecting the position of the heater. And a method for improving a Czochralski puller for growing a defect-free single crystal silicon ingot free from the baconite agglomerates and interstitial agglomerates. The method of claim 60, The selection step further comprises the step of changing the position of the heater and the position of the crucible vertically with respect to the sealing body, the defect-free single crystal silicon ingot without the bake agglomeration and interstitial agglomeration How to improve Czochralski Fuller to grow. The method of claim 56, wherein The crucible comprises a crucible top and a crucible bottom, the cooling jacket comprises a cooling jacket top and a cooling jacket bottom, and the selecting step changes the distance between the crucible top and the cooling jacket bottom, thereby A method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of vacancy agglomerates and interstitial agglomerates, comprising selecting a location of a cooling jacket. The method of claim 56, wherein Wherein the heating pack comprises an upper heating pack housing and a lower heating pack housing each filled with a heat absorbing material, and wherein the selecting step removes at least a portion of the heat absorbing material from the upper heating pack housing. A method of improving Czochralski puller for growing a defect-free single crystal silicon ingot free of bacon and agglomerate agglomerates, characterized in that it comprises the step of selecting. The method of claim 56, wherein The selection step At least one of the position of the train assembly, the arrangement of the train assembly, and the position of the heater is such that the temperature gradient at the ingot-melt boundary on the axis is equal to or equal to the temperature gradient at the diffusion distance from the edge of the cylinder. A first selection step selected to be formed above; And A second selection step wherein at least one of the arrangement of the cooling jacket, the location of the crucible and the arrangement of the heating pack is selected such that a temperature gradient at the ingot-melt boundary on the axis is greater than 2.5 ° K / mm; The method of improving the Czochralski puller for growing the defect-free single-crystal silicon ingot without the bacon and agglomerate agglomerates. The method of claim 64, wherein The crucible comprises a crucible top and crucible bottom, the train group comprises a heat shield top and a heat shield bottom, the heater comprises a heater top and a heater bottom, and the location of the train group Selected by the change in distance between the top of the crucible, the arrangement of the train group is selected by providing a heat shield cover at the bottom of the heat shield, and the position of the heater is the distance between the top of the crucible and the top of the heater And wherein the first selection step is such that the temperature gradient at the ingot-melt boundary on the axis is equal to or greater than the temperature gradient at the diffusion distance from the cylindrical edge. Location of the train group, And an arrangement and selecting a position of the heater. 17. A method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of vacancy agglomerates and interstitial agglomerates. 66. The method of claim 65, The crucible comprises a crucible top and crucible bottom, the heater comprises a heater top and a heater bottom, the cooling jacket comprises a cooling jacket top and a cooling jacket bottom, and the heating pack is respectively filled with heat absorbing material. A heating pack housing and a lower heating pack housing, wherein the position of the heater is selected by varying the distance between the top of the crucible and the top of the heater, the position of the heater and the position of the crucible perpendicular to the seal. And the position of the cooling jacket is selected by varying the distance between the top of the crucible and the bottom of the cooling jacket, and the arrangement of the heating pack removes at least a portion of the heat absorbing material from the upper heating pack housing. Is chosen by The second selection step may further include the arrangement of the cooling jacket, the location of the crucible, the location of both the heater and the crucible such that the temperature gradient at the ingot-melt boundary on the axis is greater than 2.5 ° K / mm and And selecting an arrangement of the heating packs. 12. A method of improving a Czochralski puller for growing a defect-free single crystal silicon ingot free of bacon and interstitial agglomerates.